CN2075656U - Potassium hydrogen phthalate single crystal growth crystal carrying frame - Google Patents

Potassium hydrogen phthalate single crystal growth crystal carrying frame Download PDF

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Publication number
CN2075656U
CN2075656U CN 90207639 CN90207639U CN2075656U CN 2075656 U CN2075656 U CN 2075656U CN 90207639 CN90207639 CN 90207639 CN 90207639 U CN90207639 U CN 90207639U CN 2075656 U CN2075656 U CN 2075656U
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China
Prior art keywords
crystal
single crystal
growth
potassium hydrogen
hydrogen phthalate
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Expired - Lifetime
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CN 90207639
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Chinese (zh)
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梁桂金
郑秀沁
杨桐琴
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Fujian Institute of Research on the Structure of Matter of CAS
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Fujian Institute of Research on the Structure of Matter of CAS
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Priority to CN 90207639 priority Critical patent/CN2075656U/en
Publication of CN2075656U publication Critical patent/CN2075656U/en
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model is used for potassium hydrogen phthalate (chemical formula KHC)8H4O4A crystal carrying frame for the growth of Potasplus old Phthalate KAP single crystal, which is an I') type or eight type formed by five or eight organic glass platesDetachable frame structure capable of being completed by using the deviceThe defect that the single crystal is grown by the traditional method is overcome, the complete b-axis large-size single crystal can be rapidly grown, the dislocation density of the crystal is greatly reduced, and the crystal quality is improved.

Description

Phthalic hydrogen potassium single crystle growing rack
The utility model is used for Potassium Hydrogen Phthalate (chemical formula: KHC 8H 4O 4, be called for short KAP) and single crystal growing, also be applicable to crystalline growth of the same type, for example: hydrogen phthalate rubidium monocrystalline or be easy to the crystal of certain direction defective growth.
Existing aqueous solution crystal technique is generally continued to use Holden rotation crystallizer or its modified version of U.S. Bell Telephone Laboratorles in 1964, in this works at Holden " Growing Crystais With a Rotary Crystalllzer " reflection is arranged.Adopt this technology in the KAP crystal growth, be characterized in point-like or sheet seed crystal, allow its self-sow, growth speed is long fast, but tends to the growth of stratiform lineae ablicantes defective occur at a pair of conical surface of crystal a axle forward.
By the KAP crystal of conventional art growth is made the X ray morphology analysis, finding has a kind of carboxyl at a axle forward very strong " preferred orientation " to be arranged in the crystal, makes that a axle forward speed of growth is all faster than other directions; There are three kinds of microcosmic tunnels in the crystalline structure, in (111) of a axle forward, ( ) show head.Extraneous factor such as impurity, temperature fluctuation etc. are inevitably, just cause very easily that degree of supersaturation changes, and cause mother liquor parcel or absorption impurity, cause lattice distortion, (111), ( ) stratiform lineae ablicantes defective growth appears in face.The difficult control of ideal growth conditions.
In order to overcome the growth of the existing defective of conventional growth method, shortcoming such as crystal mass is relatively poor, and utilization ratio is lower, and the growth difficulty is big has proposed to grow fast two kinds of patterns of the utility model of complete transparent b axle large single crystal:
(1) restriction a axle forward growth: the skeleton construction (seeing accompanying drawing 1) that carrier crystal stand is formed for detachable five organic plates of " worker " font.It is of a size of 110 * 114mm2 sheet and is go to the bottom on " worker " font (4,6); 114 * 62mm1 sheet is " worker " font intermediate plate (5); 82 * 110mm2 sheet is " worker " font left and right sides baffle plate (1,3), with 14 ∮, 4 * 20 stainless steel screw anchorings, connects the perspex bar crystalline style and (2).Seed crystal is bonded at organic plates (5) bottom with multi-purpose adhesive.Select seed crystal-a to be directed upwardly.
(2) restriction a is to growth: carrier crystal stand is eight organic plates skeleton constructions of " Asia " font (seeing accompanying drawing 2).Be characterized in only allowing crystal b, c direction grow.Seed crystal a is subjected to dividing plate (7) restriction to width, conforms to the mask pattern inside casing, is generally 1 inch (application request).
The mask pattern size can arbitrarily design according to required crystalline size.The carrier crystal stand material is selected except that poly (methyl methacrylate) plate, also available various plastic plates, stainless steel plate replaces, but for ease of observation, with transparent for well.
The utility model and existing suspension type self-sow technology relatively have following advantage:
1) in whole growth in the cycle, crystal growth face is subjected to certain restriction, and dignity is more little than changing, and crystal growing surface is long-pending from about 20cm 2Length only is 70cm to the end 2About, and the crystal surface area of self-sow can reach 300cm 2More than.The degree of supersaturation of solution is more easy to control like this, and rate of temperature fall is more stable.
2) in culture tank with capacity, the utility model can grow the large single crystal (user often requires more than 3 inch) that the b axle reaches 4 inch for 50-40 ℃ fast in the optimum growh zone of nutrient solution, the crystal utilization ratio is up to 90%, and the crystal utilization ratio of self-sow only is 50%, the b axle is generally below 3 inch, and growth cycle is about one times than the utility model.
3) by observation analysis, the crystal that self-sow goes out (001) face dislocation distributes as shown in Figure 3.The crystal that the utility model grew all drops on 2,3,4,5 dislocation desity lower regions.Test result, dislocation desity generally are lower than 50/cm 2, crystal mass is significantly increased.
4) this carrier crystal stand loading and unloading are simple and easy, and it is convenient to get crystal, and do not have the seed crystal danger that comes off extremely.
Accompanying drawing 1 is " worker " font structure, and wherein (1), (3) are the left and right sides plate washer, and (2) are crystalline style, goes to the bottom on being in (4), (6), and (5) are intermediate plate.Accompanying drawing 2 be "
Figure 902076396_IMG6
" the font structure, except that (7) are the dividing plate, all the other are with accompanying drawing 1.Accompanying drawing 3 is the crystal dislocation distribution plan, and (1), (6) zone are positioned at+a direction, and dislocation desity is up to 280-770/cm 2, (3), (4) are low dislocation zone, density is<120/cm 2, (2), (5) they are minimum dislocation zone, density is<120/cm 2
Embodiment one: use Fig. 1 carrier crystal stand, in 25 liters of culture tanks.Put two 70 * 25 * 1mm seed crystals, grow a * b * c about 40 days and reach 62 * 114 * 45mm, monolithic weigh 500 the gram two complete transparent single crystals of bulk.
Embodiment two:, grow a * b * c about 40 days and reach 26 * 114 * 40mm in the capacity culture tank with Fig. 2 carrier crystal stand, weigh four blocks of strip and block monocrystalline of 200 grams of monolithic.

Claims (4)

1, a kind of carrier crystal stand that is used for the Potassium Hydrogen Phthalate single crystal growing is characterized in that: this device be with five or eight poly (methyl methacrylate) plates and with fixing " I " formed of stainless steel screw or "
Figure 902076396_IMG3
" the detachable skeleton construction of type.
2, carrier crystal stand according to claim 1 is characterized in that: poly (methyl methacrylate) plate can replace with various plastic plates or thin stainless steel plate.
3, carrier crystal stand according to claim 1 is characterized in that: the size of framework is decided by the size of required monocrystalline.
4, carrier crystal stand according to claim 1 is characterized in that: it also is applicable to crystalline growth of the same type.
CN 90207639 1990-05-23 1990-05-23 Potassium hydrogen phthalate single crystal growth crystal carrying frame Expired - Lifetime CN2075656U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 90207639 CN2075656U (en) 1990-05-23 1990-05-23 Potassium hydrogen phthalate single crystal growth crystal carrying frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 90207639 CN2075656U (en) 1990-05-23 1990-05-23 Potassium hydrogen phthalate single crystal growth crystal carrying frame

Publications (1)

Publication Number Publication Date
CN2075656U true CN2075656U (en) 1991-04-24

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CN 90207639 Expired - Lifetime CN2075656U (en) 1990-05-23 1990-05-23 Potassium hydrogen phthalate single crystal growth crystal carrying frame

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CN (1) CN2075656U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101462949A (en) * 2007-12-17 2009-06-24 天津市化学试剂研究所 Method for preparing primary standard reagent potassium hydrogen phthalate
CN103361712A (en) * 2012-04-09 2013-10-23 中国科学院理化技术研究所 Crystal carrying frame for large-section KDP crystal growth and growth method
CN105088343A (en) * 2014-05-05 2015-11-25 中国科学院理化技术研究所 KDP crystal growth crystal carrying frame and growth method
CN105256377A (en) * 2015-11-10 2016-01-20 中国科学院上海光学精密机械研究所 Crystal carrying rack for KDP crystal growth

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101462949A (en) * 2007-12-17 2009-06-24 天津市化学试剂研究所 Method for preparing primary standard reagent potassium hydrogen phthalate
CN101462949B (en) * 2007-12-17 2013-06-19 天津市化学试剂研究所 Method for preparing primary standard reagent potassium hydrogen phthalate
CN103361712A (en) * 2012-04-09 2013-10-23 中国科学院理化技术研究所 Crystal carrying frame for large-section KDP crystal growth and growth method
CN103361712B (en) * 2012-04-09 2016-01-13 中国科学院理化技术研究所 Crystal carrying frame for large-section KDP crystal growth and growth method
CN105088343A (en) * 2014-05-05 2015-11-25 中国科学院理化技术研究所 KDP crystal growth crystal carrying frame and growth method
CN105088343B (en) * 2014-05-05 2017-10-13 中国科学院理化技术研究所 KDP crystal growth crystal carrying frame and growth method
CN105256377A (en) * 2015-11-10 2016-01-20 中国科学院上海光学精密机械研究所 Crystal carrying rack for KDP crystal growth

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