CN207542214U - A kind of wafer continuous wash, drying device - Google Patents
A kind of wafer continuous wash, drying device Download PDFInfo
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- CN207542214U CN207542214U CN201721796767.5U CN201721796767U CN207542214U CN 207542214 U CN207542214 U CN 207542214U CN 201721796767 U CN201721796767 U CN 201721796767U CN 207542214 U CN207542214 U CN 207542214U
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- wafer
- drying device
- continuous wash
- hothouse
- purge chamber
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Abstract
The utility model is related to a kind of wafer continuous wash, drying device, including：Purge chamber, for being cleaned to wafer；Hothouse for wafer to be dried, and is arranged on the downstream of purge chamber；The continuous transport mechanism of wafer passes through purge chamber and hothouse and does shuttling movement.So, the wafer continuous wash, drying device realize wafer cleaning, drying integrated, not only avoid since cleaning, drying process interrupt caused by wafer shift position, and avoid inter process wafer and carry, shift, so as to improve production efficiency, production cost is reduced.
Description
Technical field
The utility model is related to wafer processing techniques field more particularly to a kind of wafer continuous wash, drying devices.
Background technology
In IC manufacturing field, after certain processing steps, it will usually pollutant is left in crystal column surface, these
Influence of the pollutant to product subsequent technique is very big.Therefore, in fabrication of semiconductor device, most frequent processing step
It is exactly wafer cleaning.After wafer cleaning is completed, it is re-injected into drying machine and is dried, so as to cause cleaning, back tender
The problem of sequence is interrupted, and interval time is long, low production efficiency.
Utility model content
The purpose of this utility model is to overcome deficiency of the prior art, provide a kind of simple in structure, function is reliable,
It causes wafer to carry out cleaning and the continuous wafer continuous wash of drying process, drying device.
In order to solve the above-mentioned technical problem, the utility model is related to a kind of wafer continuous wash, drying device, packets
It includes：
Purge chamber, for being cleaned to wafer；
Hothouse for wafer to be dried, and is arranged on the downstream of purge chamber；
The continuous transport mechanism of wafer passes through purge chamber and hothouse and does shuttling movement.
This wafer continuous wash, drying device can realize wafer cleaning, drying integrated, not only avoid since wafer moves
Cleaning, drying process interrupt caused by dynamic position, and avoid inter process wafer and carry, shift, so as to improve production efficiency,
Reduce production cost.
As further improvement of the utility model, purge chamber's quantity is set as multiple, including cloth successively in order
At least one organic wash room put, at least one inorganic matter purge chamber, at least one deionized water purge chamber.
Crystal column surface exists there are many different pollutants, such as organic matter, inorganic matter, only by a kind of the clear of cleaning solution
Cleaning device is difficult to comprehensive cleaning, in order to avoid the above situation occurs, is set in this wafer continuous wash, drying device multiple
Spray the purge chamber of different cleaning solutions, sequential.
As further improvement of the utility model, air injection unit is both provided at the top and bottom of hothouse.Gas
Wafer is sprayed to by air injection unit.
In a manner that in the top and bottom of hothouse, air injection unit is set so that the positive and negative of wafer is done
It is dry, reduce wafer and turn over process.
As further improvement of the utility model, air injection unit includes heating unit, for adding to the gas
Heat.
Gas is heated by heating unit so that it is with higher molecular kinetic energy, so as to improve the dry of wafer
Dry speed.
As further improvement of the utility model, gas temperature is arranged between 50~60 DEG C.
Gas temperature is arranged between 50~60 DEG C, has not only improved drying wafer speed, but also will not cause wafer thermal deformation
It measures excessive, influences product quality.
As further improvement of the utility model, gas is inert gas.
Gas uses inert gas, can be effectively prevented the phenomenon that wafer aoxidizes, influences product quality and occur.
As further improvement of the utility model, inert gas is nitrogen.
The chemical property of nitrogen is stablized so that and wafer is not susceptible to oxidative phenomena in its atmosphere, and nitrogen is cheap, from
And reduce the production cost of drying wafer.
As further improvement of the utility model, temperature sensor is provided on the side wall of hothouse.
Temperature sensor can in real time be detected hothouse cavity inner temperature, when temperature be more than warning value when, can and
Shi Jinhang artificial interferences prevent cavity temperature excessively high, and burn-off phenomenon occurs in wafer.
As further improvement of the utility model, the temperature sensor passes through controller and the heating unit phase
Even.
It after controller receives temperature signal, handled, analyzed, then heating unit is controlled, realize reality
When, automatically control.
As further improvement of the utility model, the downstream of hothouse is provided with cooling chamber.
For wafer after hothouse, surface temperature is larger, is not easy to manually be sorted, therefore in the downstream of hothouse
There is provided cooling chambers, carry out fast cooling to wafer, substantially increase production efficiency.
Description of the drawings
It in order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is the utility model wafer continuous wash, a kind of structure diagram of embodiment of drying device.
11- organic wash rooms；12- inorganic matters purge chamber；13- deionized waters purge chamber；2- hothouses；3- wafers are continuous
Transport mechanism；4- cooling chambers.
Specific embodiment
With reference to specific embodiment, the content of the utility model is described in further detail：
In order to reach the purpose of this utility model, Fig. 1 shows that the utility model wafer continuous wash, drying device are a kind of
The structure diagram of embodiment including purge chamber, hothouse 2 and cooling chamber 4, and according to along arrangement, has further included wafer company
Continuous transport mechanism 3, passes through 4 cavity of above-mentioned purge chamber, hothouse 2 and cooling chamber, and wafer is carried out by the carrying roller set thereon
It automatically delivers.Wherein, purge chamber is used to clean wafer.Due to, crystal column surface exists there are many different pollutants, if any
Machine object, inorganic matter etc. are difficult to comprehensive cleaning only by a kind of cleaning device of cleaning solution, in order to avoid the above situation is sent out
Raw, there are three different types of purge chambers for setting before hothouse 2, they are respectively organic wash room 11, inorganic matter cleaning
Room 12, deionized water purge chamber 13, and three is sequentially arranged according to wafer traffic direction.First, to hydrophobic on wafer
Organic matter is purged, and then, in the removing for carrying out the inorganic matters such as crystal column surface particulate matter, is finally rinsed using deionized water dry
Only.Wafer by cleaning treatment is brought hothouse 2 by the continuous transport mechanism 3 of wafer and is dried.At the top of hothouse 2 and
Bottom is both provided with air injection unit.Gas sprays to wafer by air injection unit.In order to improve the rate of drying of wafer, in jet list
Heating unit is set in member, for being dried and heated to gas, temperature control between 50~60 DEG C so that its have compared with
High molecular kinetic energy, and will not cause that wafer heat distortion amount is excessive, influences product quality again.Occur to be effectively prevented wafer
Oxidation, the phenomenon that influencing product quality, occur, for the nitrogen that dry gas is preferably cheap, chemical property is stablized, when
So, other inert gases can also be selected.Then enter cooling chamber 4 by dried crystal and carry out cold-zone, so as to reduce it
Surface temperature facilitates and is manually picked up, and improves working efficiency.
Temperature is excessively high in the drying process for wafer in order to prevent, burning occurs or heat distortion amount is excessive, in hothouse 2
Temperature sensor is provided on side wall, 2 cavity temperature of hothouse can be detected in real time, when temperature is more than warning value
When, artificial interference can be carried out in time, prevent cavity temperature excessively high, burn-off phenomenon occurs in wafer.It is further to improve, temperature sensing
Device to controller with heating unit by being connected.It after controller receives temperature signal, handled, analyzed, then to heating
Device is controlled, it is achieved thereby that being controlled in real time, automatically 2 cavity temperature of hothouse.
To the explanation of the disclosed embodiments, professional and technical personnel in the field is enable to realize or new using this practicality
Type.A variety of modifications of these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide range consistent with features of novelty.
Claims (10)
1. a kind of wafer continuous wash, drying device, which is characterized in that including：
Purge chamber, for being cleaned to wafer；
Hothouse for wafer to be dried, and is arranged on the downstream of the purge chamber；
The continuous transport mechanism of wafer passes through the purge chamber and the hothouse and does shuttling movement.
2. according to described in claim 1 wafer continuous wash, drying device, which is characterized in that purge chamber's quantity is set
Be set to it is multiple, including at least one organic wash room being sequentially arranged in order, at least one inorganic matter purge chamber, until
A few deionized water purge chamber.
3. according to described in claim 1 wafer continuous wash, drying device, which is characterized in that on the top of the hothouse
Portion and bottom are both provided with air injection unit；Gas sprays to wafer by the air injection unit.
4. according to described in claim 3 wafer continuous wash, drying device, which is characterized in that the air injection unit includes
Heating unit, for being heated to the gas.
5. according to described in claim 4 wafer continuous wash, drying device, which is characterized in that the gas temperature setting
Between 50~60 DEG C.
6. according to described in claim 4 wafer continuous wash, drying device, which is characterized in that the gas is indifferent gas
Body.
7. according to described in claim 6 wafer continuous wash, drying device, which is characterized in that the inert gas is nitrogen
Gas.
8. according to described in claim 4 wafer continuous wash, drying device, which is characterized in that the side wall of the hothouse
On be provided with temperature sensor.
9. according to described in claim 8 wafer continuous wash, drying device, which is characterized in that the temperature sensor leads to
Controller is crossed with the heating unit to be connected.
10. according to described in claim 4 wafer continuous wash, drying device, which is characterized in that under the hothouse
Trip is provided with cooling chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721796767.5U CN207542214U (en) | 2017-12-20 | 2017-12-20 | A kind of wafer continuous wash, drying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721796767.5U CN207542214U (en) | 2017-12-20 | 2017-12-20 | A kind of wafer continuous wash, drying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207542214U true CN207542214U (en) | 2018-06-26 |
Family
ID=62618945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721796767.5U Active CN207542214U (en) | 2017-12-20 | 2017-12-20 | A kind of wafer continuous wash, drying device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207542214U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585598A (en) * | 2018-11-13 | 2019-04-05 | 横店集团东磁股份有限公司 | The bad order ameliorative way of cell piece |
-
2017
- 2017-12-20 CN CN201721796767.5U patent/CN207542214U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585598A (en) * | 2018-11-13 | 2019-04-05 | 横店集团东磁股份有限公司 | The bad order ameliorative way of cell piece |
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Legal Events
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Room 3, No. 248, Chenghu Road, Kunshan Development Zone, Suzhou City, Jiangsu Province 215300 Patentee after: Chenggong Environmental Protection Technology (Nantong) Co.,Ltd. Address before: Room 3, No. 248, Chenghu Road, Kunshan Development Zone, Suzhou City, Jiangsu Province 215300 Patentee before: KUNSHAN CHENGGONG ENVIRONMENTAL PROTECTION TECHNOLOGY CO.,LTD. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221223 Address after: No. 323, Jinchuan Road, Nantong Hi tech Industrial Development Zone, Nantong, Jiangsu 226399 Patentee after: Jiangsu Sizhi Semiconductor Technology Co.,Ltd. Address before: Room 3, No. 248, Chenghu Road, Kunshan Development Zone, Suzhou City, Jiangsu Province 215300 Patentee before: Chenggong Environmental Protection Technology (Nantong) Co.,Ltd. |