CN207518550U - Trans-impedance amplifier - Google Patents
Trans-impedance amplifier Download PDFInfo
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- CN207518550U CN207518550U CN201720910563.3U CN201720910563U CN207518550U CN 207518550 U CN207518550 U CN 207518550U CN 201720910563 U CN201720910563 U CN 201720910563U CN 207518550 U CN207518550 U CN 207518550U
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- 230000003287 optical effect Effects 0.000 claims abstract description 13
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Abstract
The utility model provides a kind of trans-impedance amplifier, including：The input terminal coupling optical diode of equivalent two level amplification module, for accessing input voltage signal, output terminal is used to export the amplified first voltage signal of two level；Reverse phase amplifying unit, couple the output terminal of equivalent two level amplifying unit, for accessing first voltage signal, export the amplified amplification voltage signal of reverse phase, reverse phase amplifying unit includes third N-type transistor and couples the 4th N-type transistor of third N-type transistor, third N-type transistor is for receiving third d. c. voltage signal, and for the 4th N for receiving equivalent two level amplification module output first voltage signal, voltage signal is amplified in third N-type transistor and the output of the 4th N-type transistor public connecting end；And feedback resistance, couple the input terminal of equivalent two level amplification module and the output terminal of reverse phase amplifying unit.The feedback resistance of this trans-impedance amplifier can not be by original conditionality, it is possible to increase resistance reduces input noise, promotes sensitivity.
Description
Technical field
The utility model is related to COMS technical fields, more particularly to a kind of expansion gain reduces noise, and designs simple
Trans-impedance amplifier.
Background technology
Trans-impedance amplifier (TIA) full name is trans-impedance amplifier, is one kind of Amplifier type, puts
Big device type is defined according to the type of its input/output signal.TIA is generally used for height due to having the advantages that high bandwidth
Fast circuit, as generally used in photoelectricity transmission communication system.
The equivalent inpnt noise level of trans-impedance amplifier is to weigh one of important indicator of its transmission performance, in order to improve across
The sensitivity of impedance amplifier must need to reduce the output of noise, and the one way in which for reducing noise output can pass through increase
It is realized across resistance, theoretically bigger across hindering, noise is with regard to smaller, but mutual conductance is subject to conditions, and mutual conductance can be with increased premise
Condition must be there are one good frequency response, and frequency response quality whether can embody from gain band width product.It is existing
Trans-impedance amplifier is to provide stable voltage power supply point, and said effect is realized in a manner that PMOS and NMOS are combined, but
It is the f since the working characteristics of PMOS is limited toTSmaller, equivalent capacity is larger, this results in gain bandwidth and multiplies to a certain extent
Product becomes smaller, so that the value of mutual conductance is difficult further to become larger, the output noise size of trans-impedance amplifier cannot further drop
It is low.
Utility model content
The utility model provides a kind of trans-impedance amplifier, it is therefore intended that solves the above problems.
To solve the above problems, the utility model embodiment provides a kind of trans-impedance amplifier, including：
Equivalent two level amplification module, has an input terminal and an output terminal, and input terminal coupling optical diode is defeated for accessing
Enter voltage signal, output terminal is used to export the amplified first voltage signal of two level；
Reverse phase amplifying unit couples the output terminal of the equivalent two level amplifying unit, defeated for accessing first voltage signal
Go out the amplified amplification voltage signal of reverse phase, reverse phase amplifying unit includes third N-type transistor and the 4th N-type transistor, the 3rd N
The first end and second end of transistor npn npn is used to receive third d. c. voltage signal, and third end is amplified for exporting reverse phase
Amplify voltage signal；4th N-type transistor first end couples the third end of third N-type transistor, and second end couples equivalent two level
The output terminal of amplification module, for receiving first voltage signal, third end ground connection；
And feedback resistance, couple the input terminal of the equivalent two level amplification module and the output of the reverse phase amplifying unit
End.
As a kind of embodiment, the equivalent two level amplification module includes：
Level-one amplifying unit couples optical diode, is once amplified for accessing input voltage；
Two level amplifying unit couples the level-one amplifying unit, and two are carried out for the signal to an amplifying unit output
Secondary amplification, and export through level-one amplifying unit and the amplified first voltage of two level amplifying unit.
As a kind of embodiment, the level-one amplifying unit includes：
First P-type transistor, for first end for receiving the first d. c. voltage signal, second end couples optical diode, third
End couples the two level amplifying unit；
First N-type transistor, first end couple the third end of first P-type transistor, and second end couples optical diode,
Third end is grounded.
As a kind of embodiment, the two level amplifying unit includes：
Second P-type transistor, for first end for receiving the second d. c. voltage signal, second end couples level-one amplifying unit,
Third end is used to export first voltage；
Second N-type transistor, first end couple the third end of the second P-type transistor, and second end couples level-one amplifying unit,
Third end is grounded；
And first feedback resistance, couple the third of the second P-type transistor second end and second N-type transistor
Between end.
As a kind of embodiment, the reverse phase amplifying unit further includes a resistance, and one end of resistance is used to receive third
D. c. voltage signal, the other end couple the second end of third N-type transistor.
As a kind of embodiment, the third N-type transistor uses Native NFET.
The beneficial effects of the utility model compared with the prior art lie in：By using double N-type transistors composition it is anti-
Phase amplifying unit can promote its gain-bandwidth product, and therefore, when giving an identical fixed bandwidth, the utility model is put across resistance
The gain-bandwidth product of big device is far above the trans-impedance amplifier in existing.The feedback resistance RF of trans-impedance amplifier can not be by as a result,
Original conditionality is designed to the resistance of a high value, so as to further reduce trans-impedance amplifier input noise, increase across
The sensitivity of impedance amplifier.
Description of the drawings
Fig. 1 is the schematic diagram of the trans-impedance amplifier of the embodiment one of the utility model；
Fig. 2 is the schematic diagram of the trans-impedance amplifier of the embodiment two of the utility model；
Fig. 3 is the schematic diagram of the trans-impedance amplifier of the embodiment three of the utility model.
Attached drawing marks：100th, trans-impedance amplifier；101st, equivalent two level amplification module；1011st, level-one amplifying unit；1012、
Two level amplifying unit；102nd, reverse phase amplifying unit；103rd, optical diode.
Specific embodiment
Below in conjunction with attached drawing, to the utility model, above-mentioned and other technical characteristic and advantage carry out clearly and completely
Description, it is clear that described embodiment is only the section Example rather than whole embodiments of the utility model.
As shown in Figure 1, trans-impedance amplifier 100 includes equivalent two level amplification module 101, reverse phase amplifying unit 102 and feedback
Resistance RF.Equivalent two level amplification module 101 for receiving input voltage signal VIN, believe by the amplified first voltage of output two level
Number V1；Equivalent two level amplification module 101 has input terminal and output terminal, and input terminal coupling optical diode 103 inputs for accessing
Voltage signal VIN, output terminal are used to export the amplified first voltage signal V1 of two level.Equivalent two level amplification module 101 includes
Level-one amplifying unit 1011 and two level amplifying unit 1012, level-one amplifying unit 1011 are used to receive input voltage signal VIN, and
Level-one amplification is carried out to input voltage signal VIN, two level amplifying unit 1012 couples level-one amplifying unit 1011, for by level-one
Amplified input voltage signal VIN carries out two level amplification, and exports the amplified first voltage V1 of two level.Reverse phase amplifying unit
102 for receiving first voltage signal V1, and voltage signal VOUT is amplified in output；Reverse phase amplifying unit 102 has input terminal and defeated
Outlet, the output terminal of input terminal coupling two level amplifying unit 1012, for accessing first voltage signal V1, output terminal is used to export
Amplify voltage signal VOUT；Feedback resistance RF couples the input terminal of equivalent two level amplification module 101 and reverse phase amplifying unit 102
Output terminal.
Equivalent 101 real work of two level amplification module is primary amplification, but can respond two-stage amplification, and more equal two level is put
The response time can be reduced greatly, increases response frequency.Equivalent two level amplification module 101 includes level-one amplifying unit 1011 and two level is put
Big unit 1012, level-one amplifying unit 1011 include the first P-type transistor P1 and the first N-type transistor N1, the first P-type transistor
First end for receive the first d. c. voltage signal VD1, second end coupling optical diode 103, third end coupling two level amplification
Unit 1012；The first end of first N-type transistor N1 couples the third end of the first P-type transistor P1, two pole of second end coupling light
Pipe 103, third end ground connection.It is anti-that two level amplifying unit 1012 includes the second P-type transistor P2, the second N-type transistor N2 and first
The first end of feed resistance RF1, the second P-type transistor P2 for receiving the second d. c. voltage signal VD2, put by second end coupling level-one
Big unit 1011, third end are used to export first voltage signal V1；It is brilliant that the first end of second N-type transistor N2 couples the second p-type
The third end of body pipe P2, second end coupling level-one amplifying unit 1011, third end ground connection；First feedback resistance RF1 couples the 2nd P
Between the third end of transistor npn npn P2 second ends and the second N-type transistor N2.
Embodiment one
Reverse phase amplifying unit 102 includes third N-type transistor NL3 and the 4th N-type transistor ND3, third N-type transistor
The first end and second end of NL3 is used to receive third DC voltage VD3, and voltage signal VOUT is amplified in third end for exporting；
The third end of the first end coupling third N-type transistor NL3 of 4th N-type transistor ND3, second end couple equivalent two level amplification mould
The output terminal of block 101, for receiving first voltage signal V1, third end ground connection.
Equivalent two level amplification module 101, reverse phase amplifying unit 102 and the feedback resistance RF of trans-impedance amplifier 100 are formed
Three-stage operational amplifier, reverse phase amplifying unit is as the wherein level-one amplifying unit in three-stage operational amplifier, using two N-types
The structure of transistor come realize level-one reverse phase amplify, largely improved by the connection structure of two N-type transistors
While gain, and bandwidth is not influenced, therefore can largely improve the gain-bandwidth product of trans-impedance amplifier 100
((gain-bandwidth product)), the gain of equivalent two level amplification module 101 is Av=(gmp1+gmn1) × RF1, reverse phase
The gain of amplifying unit 102 isThe gain of trans-impedance amplifier 100 is
In above-mentioned formula, gmIt is expressed as the conductance of each transistor.
Because its gain-bandwidth product can be promoted using the reverse phase amplifying unit of the composition of double N-type transistors, therefore, to
During a fixed identical fixed bandwidth, the gain-bandwidth product of the utility model trans-impedance amplifier across resistance far above amplifying in existing
Device.The feedback resistance RF of trans-impedance amplifier 100 can not be designed to the resistance of a high value by original conditionality as a result, from
And the input noise of trans-impedance amplifier is further reduced, increase the sensitivity of trans-impedance amplifier 100.
Embodiment two
As shown in Fig. 2, another embodiment as the utility model, reverse phase amplifying unit 102 further includes resistance R1, electricity
The one end for hindering R1 receives third DC voltage, and the second end of other end coupling third N-type transistor N3 couples one in its second end
A resistance can make resistance R1 serve as the effect of an active inductance, it is possible to increase the bandwidth of reverse phase amplifying unit 102, so as to increase
The gain-bandwidth product of entire trans-impedance amplifier 100.
To reduce the pressure drop at third N-type transistor NL3 both ends, the third N-type transistor in the embodiment of the utility model
NL3 uses Native NFET.
In another embodiment of the invention, the position of equivalent two level amplification module 101 and reverse phase amplifying unit 102 is mutual
It exchanges, optical diode 103 is coupled by the input terminal of reverse phase amplifying unit 102, the output terminal of equivalent two level amplification module 101 is used for
Amplify the output of voltage signal.
Embodiment three
As shown in figure 3, another embodiment as the utility model, three units for signal amplification can be
N-type transistor is equipped between its own input terminal and output terminal, feedback resistance both ends also are provided with N-type transistor.The N-type crystal
The AGC controls (automatic growth control) of trans-impedance amplifier can be achieved in pipe.
In addition to above-mentioned function, if noise and sensitivity are not the main design goals of this trans-impedance amplifier 100, it can reduce
The conductance of P-type transistor and N-type transistor in trans-impedance amplifier 100, conductance reduce, then current reduction are consumed, so as to fulfill across resistance
The reduction of 100 power consumption of amplifier.
Particular embodiments described above has carried out into one the purpose of this utility model, technical solution and advantageous effect
The detailed description of step, it should be understood that the foregoing is merely specific embodiment of the utility model, are not used to limit this reality
With novel protection domain.Particularly point out, to those skilled in the art, it is all the spirit and principles of the utility model it
Any modification, equivalent substitution, improvement and etc. that are interior, being done, should be included within the scope of protection of this utility model.
Claims (6)
1. a kind of trans-impedance amplifier, which is characterized in that including：
Equivalent two level amplification module has an input terminal and an output terminal, input terminal coupling optical diode, for accessing input electricity
Signal is pressed, output terminal is used to export the amplified first voltage signal of two level；
Reverse phase amplifying unit couples the output terminal of the equivalent two level amplification module, and for accessing first voltage signal, output is anti-
Mutually amplified amplification voltage signal, reverse phase amplifying unit include third N-type transistor and the 4th N-type transistor, and third N-type is brilliant
The first end and second end of body pipe is used to receive third d. c. voltage signal, and third end is used to export the amplified amplification of reverse phase
Voltage signal；4th N-type transistor first end couples the third end of third N-type transistor, and second end couples equivalent two level amplification
The output terminal of module, for receiving first voltage signal, third end ground connection；
And feedback resistance, couple the input terminal of the equivalent two level amplification module and the output terminal of the reverse phase amplifying unit.
2. trans-impedance amplifier according to claim 1, which is characterized in that the equivalent two level amplification module includes：
Level-one amplifying unit couples optical diode, is once amplified for accessing input voltage；
Two level amplifying unit couples the level-one amplifying unit, and secondary put is carried out for the signal to an amplifying unit output
Greatly, it and exports through level-one amplifying unit and the amplified first voltage of two level amplifying unit.
3. trans-impedance amplifier according to claim 2, which is characterized in that the level-one amplifying unit includes：
First P-type transistor, for first end for receiving the first d. c. voltage signal, second end couples optical diode, third end coupling
Connect the two level amplifying unit；
First N-type transistor, first end couple the third end of first P-type transistor, second end coupling optical diode, third
End ground connection.
4. trans-impedance amplifier according to claim 2, which is characterized in that the two level amplifying unit includes：
Second P-type transistor, for first end for receiving the second d. c. voltage signal, second end couples level-one amplifying unit, third
It holds to export first voltage；
Second N-type transistor, first end couple the third end of the second P-type transistor, second end coupling level-one amplifying unit, third
End ground connection；
And first feedback resistance, couple the second P-type transistor second end and second N-type transistor third end it
Between.
5. trans-impedance amplifier according to claim 1, which is characterized in that the reverse phase amplifying unit further includes a resistance,
For receiving third d. c. voltage signal, the other end couples the second end of third N-type transistor for one end of resistance.
6. trans-impedance amplifier according to claim 1 or 5, which is characterized in that the third N-type transistor uses Native
NFET。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720910563.3U CN207518550U (en) | 2017-07-25 | 2017-07-25 | Trans-impedance amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720910563.3U CN207518550U (en) | 2017-07-25 | 2017-07-25 | Trans-impedance amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN207518550U true CN207518550U (en) | 2018-06-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720910563.3U Withdrawn - After Issue CN207518550U (en) | 2017-07-25 | 2017-07-25 | Trans-impedance amplifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107395133A (en) * | 2017-07-25 | 2017-11-24 | 杭州洪芯微电子科技有限公司 | Trans-impedance amplifier |
| CN109075755A (en) * | 2018-08-01 | 2018-12-21 | 深圳市汇顶科技股份有限公司 | A kind of range sensor receives analog front circuit and range sensor |
-
2017
- 2017-07-25 CN CN201720910563.3U patent/CN207518550U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107395133A (en) * | 2017-07-25 | 2017-11-24 | 杭州洪芯微电子科技有限公司 | Trans-impedance amplifier |
| CN107395133B (en) * | 2017-07-25 | 2024-01-02 | 杭州洪芯微电子科技有限公司 | Transimpedance amplifier |
| CN109075755A (en) * | 2018-08-01 | 2018-12-21 | 深圳市汇顶科技股份有限公司 | A kind of range sensor receives analog front circuit and range sensor |
| WO2020024122A1 (en) * | 2018-08-01 | 2020-02-06 | 深圳市汇顶科技股份有限公司 | Proximity sensor receiving analog front-end circuit and proximity sensor |
| CN109075755B (en) * | 2018-08-01 | 2020-05-12 | 深圳市汇顶科技股份有限公司 | Distance sensor receiving analog front-end circuit and distance sensor |
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Granted publication date: 20180619 Effective date of abandoning: 20240102 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20180619 Effective date of abandoning: 20240102 |