CN207460004U - A kind of LLC power based on L6599A expands circuit - Google Patents
A kind of LLC power based on L6599A expands circuit Download PDFInfo
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- CN207460004U CN207460004U CN201721183926.4U CN201721183926U CN207460004U CN 207460004 U CN207460004 U CN 207460004U CN 201721183926 U CN201721183926 U CN 201721183926U CN 207460004 U CN207460004 U CN 207460004U
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Abstract
A kind of LLC power based on L6599A expands circuit, including the first totem-pote circuit, the second totem-pote circuit, L6599A chips and driving circuit, the driving circuit includes metal-oxide-semiconductor V20, metal-oxide-semiconductor V5, metal-oxide-semiconductor V54, metal-oxide-semiconductor V21, metal-oxide-semiconductor V3, metal-oxide-semiconductor V15, metal-oxide-semiconductor V53 and metal-oxide-semiconductor V17, first totem-pote circuit includes resistance R68, triode V33 and triode V34, the base stage of other end connecting triode V34 and the base stage of triode V33 of 11st foot LVG connection resistance R68, resistance R68 of L6599A chips.The utility model extends the driving force scope of L6599A with the circuit topology form of half-bridge, can realize the driving of the communication power supply of 3KW.
Description
Technical field
The utility model is related to a kind of power to expand circuit, is specifically that a kind of LLC power based on L6599A expands circuit.
Background technology
L6599A is an accurate double ended controller for being used for resonance oscillation semi-bridge topological circuit.It provides 50% duty cycle,
Same time drive signal is high-end and 180 ° of reverse phases of low side.The adjustment of output voltage is realized by adjusting working frequency
, a fixed dead time is inserted between the switch of high low-end switch pipe to ensure the realization of Sofe Switch and can work
In HF switch state.High-end switch is driven with Bootload, IC internal integrations one can bear more than 600V voltages
High pressure floating structure and a synchronous drive-type high pressure lateral double diffusion metal oxide semiconductor（DMOS）Device saves one
Recover bootstrap diode soon in a outside.IC design teacher sets converter by the oscillator that an outside can be set
Operating frequency range.During startup, to prevent start from shoving, the startup limiting frequency that switching frequency can be set from one progressively drops
Low, until control loop reaches stationary value, the variation of this frequency is nonlinear, and output voltage toning is preferably minimized by it
Limit, the time of start-up course can set.In light condition, IC is forced into an intermittent pulse operating mode, so as to
The input energy of converter is maintained to a minimum value.Since L6599A has excellent underloading pulse working mode and high workload
Efficiency, is now widely used for the power supply of LCD TV and plasm TV, desktop computer and server power supply, and telecommunication apparatus is opened
Powered-down source, the Switching Power Supply of ac/dc adapter etc..Using fairly common.Although the driving force of L6599A itself is stronger, it is
An output current 0.3A is provided for two gate drivers and pour into the typical peak of electric current 0.8A with low-voltage pull-down pattern
Current handling capability.But with the power expansion of Switching Power Supply, the MOSFET of the multiple parallel connections of driving, the driving force of L6599A
There is insufficient situation, influence the normal work of Switching Power Supply.
Utility model content
The purpose of this utility model is to provide a kind of LLC power based on L6599A to expand circuit, to solve the above-mentioned back of the body
The problem of being proposed in scape technology.
To achieve the above object, the utility model provides following technical solution：
A kind of LLC power based on L6599A expands circuit, including the first totem-pote circuit, the second totem-pote circuit,
L6599A chips and driving circuit, the driving circuit include metal-oxide-semiconductor V20, metal-oxide-semiconductor V5, metal-oxide-semiconductor V54, metal-oxide-semiconductor V21, metal-oxide-semiconductor
V3, metal-oxide-semiconductor V15, metal-oxide-semiconductor V53 and metal-oxide-semiconductor V17, first totem-pote circuit include resistance R68, triode V33 and three poles
The base stage and three of the other end connecting triode V34 of 11st foot LVG connection resistance R68, resistance R68 of pipe V34, L6599A chip
The base stage of pole pipe V33, the other end connection power supply VCC of collector connection the resistance R23, resistance R23 of triode V34, triode
The emitter of the emitter connecting triode V33 of V34, resistance R52, resistance R30, resistance R79, resistance R133, diode V51
Cathode, the cathode of diode V52, the cathode of the cathode of diode V48 and diode V69, the other end connection resistance of resistance R52
The grid of R50 and metal-oxide-semiconductor V3, the anode of the other end connection diode V51 of resistance R50, the other end connection resistance of resistance R30
The grid of R46 and metal-oxide-semiconductor V15, the anode of the other end connection diode V52 of resistance R46, the other end connection electricity of resistance R79
Hinder the grid of R78 and metal-oxide-semiconductor V53, the anode of the other end connection diode V48 of resistance R78, the other end connection of resistance R133
The grid of resistance R132 and metal-oxide-semiconductor V17, the anode of the other end connection diode V69 of resistance R132, the second totem electricity
Road includes the 15th foot HVG connection resistance R26 of resistance R26, triode V36 and triode V35, L6599A chip, resistance R26's
The base stage of other end connecting triode V36 and the base stage of triode V35, the collector connection resistance R36 of triode V36, resistance
The other end connection power supply VCC of R36, emitter, resistance R22, the resistance of the emitter connecting triode V35 of triode V36
R32, resistance R40, resistance R135, the cathode of diode V47, the cathode of diode V49, the cathode and diode of diode V50
The cathode of V68, the grid of the other end connection resistance R134 and metal-oxide-semiconductor V20 of resistance R135, the other end connection two of resistance R134
The anode of pole pipe V68, the grid of the other end connection resistance R77 and metal-oxide-semiconductor V5 of resistance R40, the other end connection two of resistance R40
The anode of pole pipe V47, the grid of the other end connection resistance R21 and metal-oxide-semiconductor V54 of resistance R22, the other end connection of resistance R21
The anode of diode V50, the grid of the other end connection resistance R33 and metal-oxide-semiconductor V21 of resistance R32, the other end of resistance R33 connect
Connect the anode of diode V49, the cathode of the drain electrode connection diode V27 of metal-oxide-semiconductor V20, capacitance C11, diode V30 cathode,
The drain electrode of metal-oxide-semiconductor V5, the drain electrode of metal-oxide-semiconductor V54 and the drain electrode of metal-oxide-semiconductor V21, the source electrode of the source electrode connection metal-oxide-semiconductor V5 of metal-oxide-semiconductor V20,
The source electrode of the source electrode of metal-oxide-semiconductor V54, inductance L1A and metal-oxide-semiconductor V21, the armature winding of the other end connection transformer T1 of inductance L1A,
The drain electrode of the anode connection inductance L6A and metal-oxide-semiconductor V18 of diode V27, the anode connection inductance L7A and metal-oxide-semiconductor of diode V30
The drain electrode of V32, the sun of secondary windings one end connection diode V3 of the other end connection alternating current AC+, transformer T1 of inductance L7A
Pole, the cathode of diode V3 connect the cathode of diode V22, capacitance C43 and output terminal OUT.
Preferred embodiment as the utility model：The triode V34 and triode V36 is NPN type triode, described
Triode V33 and triode V35 is PNP type triode.
Compared with prior art, the beneficial effects of the utility model are：The circuit topology form of the utility model half-bridge
It extends the driving force scope of L6599A, can realize the driving of the communication power supply of 3KW.
Description of the drawings
Fig. 1 is the circuit diagram of driving circuit；
Fig. 2 is the circuit diagram of the first totem-pote circuit；
Fig. 3 is the circuit diagram of the second totem-pote circuit
Specific embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
It clearly and completely describes, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without making creative work
All other embodiments obtained shall fall within the protection scope of the present invention.
Please refer to Fig.1-3, in the utility model embodiment, a kind of LLC power based on L6599A expands circuit, including the
One totem-pote circuit, the second totem-pote circuit, L6599A chips and driving circuit, the driving circuit include metal-oxide-semiconductor V20, MOS
Pipe V5, metal-oxide-semiconductor V54, metal-oxide-semiconductor V21, metal-oxide-semiconductor V3, metal-oxide-semiconductor V15, metal-oxide-semiconductor V53 and metal-oxide-semiconductor V17, first totem-pote circuit
The 11st foot LVG connection resistance R68 including resistance R68, triode V33 and triode V34, L6599A chip, resistance R68's is another
The base stage of one end connecting triode V34 and the base stage of triode V33, collector connection the resistance R23, resistance R23 of triode V34
The other end connection power supply VCC, emitter, resistance R52, resistance R30, the electricity of the emitter connecting triode V33 of triode V34
Hinder the moon of R79, resistance R133, the cathode of diode V51, the cathode of diode V52, the cathode of diode V48 and diode V69
Pole, the grid of the other end connection resistance R50 and metal-oxide-semiconductor V3 of resistance R52, the sun of the other end connection diode V51 of resistance R50
Pole, the grid of the other end connection resistance R46 and metal-oxide-semiconductor V15 of resistance R30, the other end connection diode V52's of resistance R46
Anode, the grid of the other end connection resistance R78 and metal-oxide-semiconductor V53 of resistance R79, the other end connection diode V48 of resistance R78
Anode, the grid of the other end connection resistance R132 and metal-oxide-semiconductor V17 of resistance R133, the other end of resistance R132 connects two poles
The anode of pipe V69, second totem-pote circuit include the of resistance R26, triode V36 and triode V35, L6599A chip
The base stage of other end connecting triode V36 and the base stage of triode V35 of 15 foot HVG connections resistance R26, resistance R26, triode
The other end connection power supply VCC of collector connection the resistance R36, resistance R36 of V36, the emitter connecting triode of triode V36
The emitter of V35, resistance R22, resistance R32, resistance R40, resistance R135, the cathode of diode V47, diode V49 cathode,
The cathode of diode V50 and the cathode of diode V68, the grid of the other end connection resistance R134 and metal-oxide-semiconductor V20 of resistance R135
Pole, the anode of the other end connection diode V68 of resistance R134, the other end connection resistance R77's and metal-oxide-semiconductor V5 of resistance R40
Grid, the anode of the other end connection diode V47 of resistance R40, the other end connection resistance R21 and metal-oxide-semiconductor V54 of resistance R22
Grid, the anode of the other end connection diode V50 of resistance R21, the other end connection resistance R33 and metal-oxide-semiconductor of resistance R32
The grid of V21, the anode of the other end connection diode V49 of resistance R33, the moon of the drain electrode connection diode V27 of metal-oxide-semiconductor V20
Pole, capacitance C11, the cathode of diode V30, the drain electrode of metal-oxide-semiconductor V5, the drain electrode of metal-oxide-semiconductor V54 and the drain electrode of metal-oxide-semiconductor V21, metal-oxide-semiconductor
The source electrode of V20 connects the source electrode of the source electrode of metal-oxide-semiconductor V5, the source electrode of metal-oxide-semiconductor V54, inductance L1A and metal-oxide-semiconductor V21, and inductance L1A's is another
The armature winding of one end connection transformer T1, the drain electrode of the anode connection inductance L6A and metal-oxide-semiconductor V18 of diode V27, diode
The drain electrode of the anode connection inductance L7A and metal-oxide-semiconductor V32 of V30, the other end connection alternating current AC+ of inductance L7A, transformer T1's
The anode of secondary windings one end connection diode V3, the cathode of diode V3 connect the cathode of diode V22, capacitance C43 and output
Hold OUT.
Triode V34 and triode V36 is NPN type triode, and the triode V33 and triode V35 are positive-negative-positive
Triode.
The operation principle of the utility model is：The 11st foot LVG low sides gate-drive output of L6599A and the 15th foot HVG high
Suspension gate-drive output in end connects totem driving circuit respectively.LVG terminating resistor R68, NPN triode V34, PNP triode
V33, resistance R23, accessory power supply VCC form typical totem driving circuit, the charge and discharge of output termination R52, R50, V51 composition
Circuit meets the grid L1 of metal-oxide-semiconductor V3；The charge-discharge circuit of output termination R30, R46, V52 composition connects the grid of metal-oxide-semiconductor V15
L2；The charge-discharge circuit of output termination R79, R78, V48 composition meets the L3 of metal-oxide-semiconductor V53；Output terminates R133, R132, V69 groups
Into charge-discharge circuit meet the grid L4 of metal-oxide-semiconductor V17；Metal-oxide-semiconductor V3, V15, V53, V17 are full parallel relationship composition half-bridge powers
The lower bridge arm of circuit.HVG terminating resistor R26, NPN triode V36, PNP triode V35, the typical totem of resistance R36 compositions drive
Dynamic circuit, the charge-discharge circuit of output termination R135, R134, V68 composition meet the grid H1 of metal-oxide-semiconductor V20；Output termination R40,
The charge-discharge circuit of R77, V47 composition meets the grid H2 of metal-oxide-semiconductor V5；The charge-discharge circuit of output termination R22, R21, V50 composition
Meet the H3 of metal-oxide-semiconductor V54；The charge-discharge circuit of output termination R32, R33, V49 composition meets the grid H4 of metal-oxide-semiconductor V21；Metal-oxide-semiconductor
V20, V5, V54, V21 are the upper bridge arms of full parallel relationship composition half-bridge power circuit.
Claims (2)
1. a kind of LLC power based on L6599A expands circuit, including the first totem-pote circuit, the second totem-pote circuit,
L6599A chips and driving circuit, which is characterized in that the driving circuit includes metal-oxide-semiconductor V20, metal-oxide-semiconductor V5, metal-oxide-semiconductor V54, MOS
Pipe V21, metal-oxide-semiconductor V3, metal-oxide-semiconductor V15, metal-oxide-semiconductor V53 and metal-oxide-semiconductor V17, first totem-pote circuit include resistance R68, three poles
The other end connecting triode of 11st foot LVG connection resistance R68, resistance R68 of pipe V33 and triode V34, L6599A chip
The base stage of V34 and the base stage of triode V33, the other end connection electricity of collector connection the resistance R23, resistance R23 of triode V34
Emitter, resistance R52, resistance R30, resistance R79, the resistance of the emitter connecting triode V33 of source VCC, triode V34
R133, the cathode of diode V51, the cathode of diode V52, the cathode of the cathode of diode V48 and diode V69, resistance R52
Other end connection resistance R50 and metal-oxide-semiconductor V3 grid, the anode of the other end connection diode V51 of resistance R50, resistance R30
Other end connection resistance R46 and metal-oxide-semiconductor V15 grid, the anode of the other end connection diode V52 of resistance R46, resistance
The grid of the other end connection resistance R78 and metal-oxide-semiconductor V53 of R79, the anode of the other end connection diode V48 of resistance R78, electricity
Hinder the grid of the other end connection resistance R132 and metal-oxide-semiconductor V17 of R133, the sun of the other end connection diode V69 of resistance R132
Pole, second totem-pote circuit includes resistance R26, triode V36 and the 15th foot HVG of triode V35, L6599A chip connects
The base stage of other end connecting triode V36 of connecting resistance R26, resistance R26 and the base stage of triode V35, the current collection of triode V36
Pole connects resistance R36, the other end connection power supply VCC of resistance R36, the transmitting of the emitter connecting triode V35 of triode V36
Pole, resistance R22, resistance R32, resistance R40, resistance R135, the cathode of diode V47, the cathode of diode V49, diode V50
Cathode and diode V68 cathode, resistance R135 the other end connection resistance R134 and metal-oxide-semiconductor V20 grid, resistance R134
Other end connection diode V68 anode, the grid of the other end connection resistance R77 and metal-oxide-semiconductor V5 of resistance R40, resistance R40
Other end connection diode V47 anode, the grid of the other end connection resistance R21 and metal-oxide-semiconductor V54 of resistance R22, resistance
The anode of the other end connection diode V50 of R21, the grid of the other end connection resistance R33 and metal-oxide-semiconductor V21 of resistance R32, electricity
The anode of the other end connection diode V49 of R33 is hindered, the drain electrode of metal-oxide-semiconductor V20 connects the cathode of diode V27, capacitance C11, two
The cathode of pole pipe V30, the drain electrode of metal-oxide-semiconductor V5, the drain electrode of metal-oxide-semiconductor V54 and the drain electrode of metal-oxide-semiconductor V21, the source electrode connection of metal-oxide-semiconductor V20
The source electrode of metal-oxide-semiconductor V5, the source electrode of metal-oxide-semiconductor V54, the source electrode of inductance L1A and metal-oxide-semiconductor V21, the other end connection transformation of inductance L1A
The armature winding of device T1, the drain electrode of the anode connection inductance L6A and metal-oxide-semiconductor V18 of diode V27, the anode connection of diode V30
The drain electrode of inductance L7A and metal-oxide-semiconductor V32, secondary windings one end of the other end connection alternating current AC+, transformer T1 of inductance L7A connect
The anode of diode V3 is connect, the cathode of diode V3 connects the cathode of diode V22, capacitance C43 and output terminal OUT.
2. the LLC power based on L6599A according to claim 1 expands circuit, which is characterized in that the triode
V34 and triode V36 is NPN type triode, and the triode V33 and triode V35 are PNP type triode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721183926.4U CN207460004U (en) | 2017-09-15 | 2017-09-15 | A kind of LLC power based on L6599A expands circuit |
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|---|---|---|---|
| CN201721183926.4U CN207460004U (en) | 2017-09-15 | 2017-09-15 | A kind of LLC power based on L6599A expands circuit |
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| CN207460004U true CN207460004U (en) | 2018-06-05 |
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| CN201721183926.4U Active CN207460004U (en) | 2017-09-15 | 2017-09-15 | A kind of LLC power based on L6599A expands circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111614265A (en) * | 2020-06-11 | 2020-09-01 | 深圳市蓝丝腾科技有限公司 | Power supply with high-power driven 5G communication base station |
-
2017
- 2017-09-15 CN CN201721183926.4U patent/CN207460004U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111614265A (en) * | 2020-06-11 | 2020-09-01 | 深圳市蓝丝腾科技有限公司 | Power supply with high-power driven 5G communication base station |
| CN111614265B (en) * | 2020-06-11 | 2021-05-11 | 衡阳市井恒电子产品有限公司 | Power supply with high-power driven 5G communication base station |
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