CN207441926U - Lc circuit structure, low-pass/high-pass lc circuit structure and digital phase shifter - Google Patents
Lc circuit structure, low-pass/high-pass lc circuit structure and digital phase shifter Download PDFInfo
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- CN207441926U CN207441926U CN201721147247.1U CN201721147247U CN207441926U CN 207441926 U CN207441926 U CN 207441926U CN 201721147247 U CN201721147247 U CN 201721147247U CN 207441926 U CN207441926 U CN 207441926U
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- single layer
- microstrip line
- layer microstrip
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Abstract
The utility model discloses a kind of lc circuit structure, the structure includes：Connected capacitance and inductance, the inductance are the first single layer microstrip line, and the capacitance is the second single layer microstrip line and the 3rd single layer microstrip line being spaced apart along straight line, and the first single layer microstrip line is connected with the second single layer microstrip line.When said structure is used under high band operation state, inductance value is more accurate, and capacitance can be adjusted to minimum state, while in turn avoids the occurrence of capacitance punctures；Also, the use of single layer microstrip line reduces the volume of circuit, has saved production cost.Correspondingly, low-passing LC chain structure, high pass lc circuit structure and high low pass digital phase shifter disclosed in the utility model, similarly with above-mentioned technique effect.
Description
Technical field
The utility model is related to technical field of circuit design, more specifically to a kind of lc circuit structure, low pass/height
Logical lc circuit structure and digital phase shifter.
Background technology
At present, microwave monolithic integrated circuit (MMIC) digital phase shifter receives and dispatches (T/R) in modern phased array radar system
In occupation of critical role in component, as wave beam control unit, the working condition of MMIC digital phase shifters is more, technical requirement
Strictly, with the further rise of research frequency, the design of MMIC digital phase shifters and the increasing of manufacture difficulty are caused.
For the phase shifter of big phase, generally using high Low-Pass Filter structure.The digital phase shifter of high Low-Pass Filter is mainly by opening
It closes lc circuit structure to form, wherein forming the high-pass behavior of phase shifter with T-shaped lc circuit structure, be formed with π type lc circuits structure
The low pass state of phase shifter.In traditional lc circuit structure, the impedance operator of lump original paper changes with the rise of frequency,
Wherein, traditional capacitance be easy to cause breakdown, and when required capacitance very little, numerical value is not in electric current and excessive voltage
Stablize；Spiral inductance is big in high band impedance variations, and the area of rotation can not determine, be not suitable with high band operation.In order to adapt to
The working condition of high band, technical staff replace capacitance and inductance using double-layer microstrip-line, but in actual engineering, generally
There can be setting to the minimum length and minimum widith of microstrip line, when required capacitance very little, be replaced with double-layer microstrip-line
Capacitance is difficult to capacitance value.
Therefore, how to design one kind for high low pass digital phase shifter and not only adapt to high band operation, but also can be with capacitance value
It is those skilled in the art's problem to be solved to the lc circuit structure of minimum state.
Utility model content
The purpose of this utility model is to provide a kind of lc circuit structure, low-pass/high-pass lc circuit structure and digital phase shifts
Device, to realize that lc circuit not only adapts to high band operation, but also can be with capacitance value to minimum state.
To achieve the above object, the utility model embodiment provides following technical solution：
A kind of lc circuit structure, including：Connected capacitance and inductance, the inductance be the first single layer microstrip line, the electricity
Hold the second single layer microstrip line and the 3rd single layer microstrip line to be spaced apart along straight line, the first single layer microstrip line and institute
The second single layer microstrip line is stated to be connected.
Wherein, the inductance is a curved single layer microstrip line.
Wherein, the capacitance is formed for the second single layer microstrip line being spaced apart along straight line and the 3rd single layer microstrip line
Bimetallic plates band gap capacitance, the opposite face of the second single layer microstrip line and the 3rd single layer microstrip line is respectively as described
The upper metallic plate of capacitance and lower metallic plate.
Wherein, described in the air between the opposite face of the second single layer microstrip line and the 3rd single layer microstrip line is used as
The dielectric of capacitance.
A kind of low-passing LC chain structure, including the lc circuit structure described in above-mentioned any one.
A kind of high pass lc circuit structure, including the lc circuit structure described in above-mentioned any one.
A kind of high low pass digital phase shifter, including the lc circuit structure described in above-mentioned any one.
By above scheme, a kind of lc circuit structure of the utility model embodiment offer, the structure includes：Phase
Capacitance and inductance even, the inductance are the first single layer microstrip line, and the capacitance is that second be spaced apart along straight line is single
Layer microstrip line and the 3rd single layer microstrip line, the first single layer microstrip line are connected with the second single layer microstrip line.
As it can be seen that a kind of lc circuit structure that the utility model embodiment provides, by the use of single layer microstrip line as inductance, in high frequency
Under section working condition, inductance value is more accurate；By the use of two single layer microstrip lines being spaced apart along straight line as capacitance, avoid
The occurrence of capacitance breakdown；It has been so designed that one kind not only adapts to high band operation, but also can be with capacitance value to minimum shape
The lc circuit structure of state；Also, the use of single layer microstrip line reduces the volume of circuit, has saved production cost.Correspondingly, originally
A kind of low-passing LC chain structure, high pass lc circuit structure and the high low pass digital phase shifter that utility model embodiment provides, also together
Sample has above-mentioned technique effect.
Description of the drawings
It in order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is a kind of lc circuit structure diagram disclosed in the utility model embodiment；
Fig. 2 another lc circuit structure diagrams disclosed in the utility model embodiment；
Fig. 3 is a kind of high low pass digital phase shifter structure diagram disclosed in the utility model embodiment.
Specific embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
It clearly and completely describes, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without making creative work
All other embodiments obtained shall fall within the protection scope of the present invention.
The utility model embodiment discloses a kind of lc circuit structure, low-pass/high-pass lc circuit structure and digital phase shifter,
To realize that lc circuit not only adapts to high band operation, but also can be with capacitance value to minimum state.
Referring to Fig. 1, a kind of lc circuit structure of the utility model embodiment offer, including：
Connected capacitance and inductance, the inductance are the first single layer microstrip line 101, and the capacitance is along straight line interval
The the second single layer microstrip line 102 and the 3rd single layer microstrip line 103 of distribution, the first single layer microstrip line 101 and second list
Layer microstrip line 102 is connected.
Specifically, building the first single layer microstrip line 101 with GaAs PHEMT techniques, can be seen that from Smith's artwork
When frequency is up to 21GHz, fl transmission coefficient is located above Smith's artwork, and the first single layer microstrip line 101, can in perception at this time
As inductance.Compared to traditional spiral inductance, the first single layer microstrip line 101 is simple in structure, and coiling area is easy to definite, is applicable in
In high-frequency work.
In the present embodiment, with the first single layer microstrip line 101, the second single layer microstrip line being spaced apart along straight line
102 and the 3rd single layer microstrip line 103 realize a lc circuit structure, avoid the defects of traditional capacitance easily punctures, reduce
The area of conventional helical inductance.Secondly, cost has been saved using single layer microstrip line, it is whole to circuit reduces parasitic capacitance etc.
The influence of structure.
In the present embodiment, one end of the second single layer microstrip line 102 is connected with the first single layer microstrip line 101, the other end with
3rd single layer microstrip line 103 is separated by certain spacing.One end of first single layer microstrip line 101 and 102 phase of the second single layer microstrip line
Even, another termination input signal.One end of 3rd single layer microstrip line 103 and the second single layer microstrip line 102 be separated by it is certain between
Away from another termination output signal.It it should be noted that can be by adjusting the second single layer microstrip line 102 and the 3rd single layer microstrip
Spacing between line 103, to change the capacitance of access circuit.
As it can be seen that a kind of lc circuit structure provided in this embodiment, by the use of the first single layer microstrip line 101 as inductance, in high frequency
Under section working condition, inductance value is more accurate；With the second single layer microstrip line 102 and the 3rd individual layer being spaced apart along straight line
Microstrip line 103 is used as capacitance, avoids the occurrence of capacitance punctures；It has been so designed that one kind not only adapts to high band operation, but also
It can be with the LC circuit structures of capacitance value to minimum state；Also, the use of single layer microstrip line reduces the volume of circuit,
Production cost is saved.
Referring to Fig. 2, another lc circuit structure of the utility model embodiment offer, including：
Connected capacitance and inductance, the inductance are a curved single layer microstrip line 201, and the capacitance is straight along one
The bimetallic plates band gap capacitance that the second single layer microstrip line 202 that line is spaced apart and the 3rd single layer microstrip line 203 are formed, described the
The opposite face of two single layer microstrip lines 202 and the 3rd single layer microstrip line 203 respectively as the capacitance upper metallic plate and under
Metallic plate；Air between the second single layer microstrip line 202 and the opposite face of the 3rd single layer microstrip line 203 is as institute
State the dielectric of capacitance.
Specifically, capacitance provided in this embodiment is similar to the above embodiments, it is single to build second with GaAs PHEMT techniques
Layer 202 and the 3rd single layer microstrip line 203 of microstrip line, the second single layer microstrip line 202 are located at the 3rd single layer microstrip line 203
MET1 layers of single-layer metal, dielectric of the intermediate air as capacitance, material is thus formed a metallic plate-dielectric-metals
The bimetallic plates band gap capacitance of plate.Wherein, the second single layer microstrip line 202 compared with the 3rd single layer microstrip line 203 side conduct
Upper metallic plate, the 3rd single layer microstrip line 203 is compared with the side of the second single layer microstrip line 202 as lower metallic plate.Centre be by
Substrate and the medium of air mixing, due to having coupling between microstrip line, just form a capacitance, realize and use individual layer
Microstrip line is as capacitance.
As it can be seen that a kind of lc circuit structure that the utility model embodiment provides, is made with a curved single layer microstrip line 201
For inductance, under high band operation state, inductance value is more accurate；Use the second single layer microstrip being spaced apart along straight line
The bimetallic plates band gap capacitance that 202 and the 3rd single layer microstrip line 203 of line is formed avoids the occurrence of capacitance punctures；So
It devises one kind and not only adapts to high band operation, but also can be with the lc circuit structure of capacitance value to minimum state；Also, individual layer is micro-
Use with line reduces the volume of circuit, has saved production cost.
Based on above-mentioned any embodiment, it is necessary to explanation, a kind of LC circuit structures that the utility model embodiment provides
It can be applied in high low pass digital phase shifter.T-shaped and π type lc circuits volume is reduced, in GaAs PHEMT techniques,
Using this circuit structure, entire lc circuit is can be achieved with single layer microstrip line.Wherein, with single layer microstrip line substitute spiral inductance and
Traditional capacitance can make high low pass digital phase shifter steady operation in high band.By using the interval between two single layer microstrip lines
With opposite metal covering, a capacitance is realized, avoids the danger of breakdown.Meanwhile parasitic parameter when reducing Electromagnetic Simulation
With the volume of circuit.
Based on above-mentioned any embodiment, it is necessary to illustrate, between the second single layer microstrip line and the 3rd single layer microstrip line
Spacing is traditionally arranged to be 5-10 millimeters, and certainly, technical staff can adjust the big of the spacing according to the demand of actual circuit
It is small, to change the capacitance of access circuit.
It, can based on above-mentioned any embodiment, it is necessary to which explanation, the first single layer microstrip line are connected with the second single layer microstrip line
To regard this two single layer microstrip lines as a single layer microstrip line, i.e., regard the first single layer microstrip line as second single layer microstrip
A part for line, by the first single layer microstrip line and the second single layer microstrip line collectively as the second single layer microstrip line, then this practicality
The lc circuit structure that new embodiment provides includes：
Connected capacitance and inductance, the inductance are the second single layer microstrip line, and the capacitance is second single layer microstrip
The bimetallic plates band gap that line and the 3rd single layer microstrip line being distributed with the second single layer microstrip line along same linear interval are formed
Capacitance；Wherein, the opposite face of the second single layer microstrip line and the 3rd single layer microstrip line is respectively as the upper of the capacitance
Metallic plate and lower metallic plate；Air conduct between the opposite face of the second single layer microstrip line and the 3rd single layer microstrip line
The dielectric of the capacitance.Wherein, the second single layer microstrip line is not only as inductance, but also the part as capacitance.
Based on above-mentioned any embodiment, it is necessary to which explanation, the first single layer microstrip line, the second single layer microstrip line and the 3rd are single
The length of layer microstrip line can be adjusted according to the needs of actual circuit structure, meanwhile, the width of three single layer microstrip lines needs
Identical width is adjusted to according to actual circuit structure.The second single layer microstrip line and the 3rd single layer microstrip with same widths
Line is convenient for storage charge.
Specifically, the length of the first single layer microstrip line of adjustment and the second single layer microstrip line can change the inductance of access circuit
The size of value, technical staff can need that voluntarily to adjust the first individual layer micro- in practical work process according to actual circuit structure
Length with line and the second single layer microstrip line.And the 3rd single layer microstrip line is generally made as the minimum length of technique.
Referring to Fig. 3, the utility model embodiment additionally provides a kind of high low pass digital phase shifter, including above-mentioned arbitrary implementation
A kind of lc circuit structure that example provides.
Specifically, high low pass digital phase shifter is mainly used in phased array radar system transmitting-receiving subassembly, as wave beam
Control unit, the working condition of high low pass digital phase shifter is more, and technical requirement is stringent, is carried with the frequency of working condition
Height, structure design and making also should accordingly improve.The digital phase shifter of high low pass is mainly made of switch lc circuit, in height
Logical number shifts to a kind of lc circuit structure provided in device using the utility model embodiment, when being operated in high band, inductance
Value is more accurate；It is also possible to by the adjusting in circuit to capacitance very little state, capacitance be also not easy it is breakdown, entirely
The volume very little of lc circuit structure, has saved production cost.
Each embodiment is described by the way of progressive in this specification, the highlights of each of the examples are with other
The difference of embodiment, just to refer each other for identical similar portion between each embodiment.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or new using this practicality
Type.A variety of modifications of these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide scope consistent with features of novelty.
Claims (7)
1. a kind of lc circuit structure, including：Connected capacitance and inductance, which is characterized in that the inductance is the first single layer microstrip
Line, the capacitance are the second single layer microstrip line and the 3rd single layer microstrip line that are spaced apart along straight line, first individual layer
Microstrip line is connected with the second single layer microstrip line.
2. lc circuit structure according to claim 1, which is characterized in that the inductance is a curved single layer microstrip
Line.
3. lc circuit structure according to claim 1, which is characterized in that the capacitance is spaced apart along straight line
The bimetallic plates band gap capacitance that second single layer microstrip line and the 3rd single layer microstrip line are formed, the second single layer microstrip line and described
Upper metallic plate and lower metallic plate of the opposite face of 3rd single layer microstrip line respectively as the capacitance.
4. lc circuit structure according to claim 3, which is characterized in that the second single layer microstrip line and the 3rd list
Dielectric of the air as the capacitance between the opposite face of layer microstrip line.
5. a kind of low-passing LC chain structure, which is characterized in that including the lc circuit knot as described in claim 1-4 any one
Structure.
6. a kind of high pass lc circuit structure, which is characterized in that including the lc circuit knot as described in claim 1-4 any one
Structure.
7. a kind of high low pass digital phase shifter, which is characterized in that including the lc circuit knot as described in claim 1-4 any one
Structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721147247.1U CN207441926U (en) | 2017-09-07 | 2017-09-07 | Lc circuit structure, low-pass/high-pass lc circuit structure and digital phase shifter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721147247.1U CN207441926U (en) | 2017-09-07 | 2017-09-07 | Lc circuit structure, low-pass/high-pass lc circuit structure and digital phase shifter |
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| Publication Number | Publication Date |
|---|---|
| CN207441926U true CN207441926U (en) | 2018-06-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425238A (en) * | 2017-09-07 | 2017-12-01 | 广东工业大学 | A kind of lc circuit structure |
| CN110212888A (en) * | 2018-12-20 | 2019-09-06 | 佛山臻智微芯科技有限公司 | A kind of high Low-Pass Filter digital phase shifter structure of micro-strip |
-
2017
- 2017-09-07 CN CN201721147247.1U patent/CN207441926U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425238A (en) * | 2017-09-07 | 2017-12-01 | 广东工业大学 | A kind of lc circuit structure |
| CN110212888A (en) * | 2018-12-20 | 2019-09-06 | 佛山臻智微芯科技有限公司 | A kind of high Low-Pass Filter digital phase shifter structure of micro-strip |
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