CN107425238A - A kind of lc circuit structure - Google Patents
A kind of lc circuit structure Download PDFInfo
- Publication number
- CN107425238A CN107425238A CN201710801260.2A CN201710801260A CN107425238A CN 107425238 A CN107425238 A CN 107425238A CN 201710801260 A CN201710801260 A CN 201710801260A CN 107425238 A CN107425238 A CN 107425238A
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- single layer
- microstrip line
- layer microstrip
- electric capacity
- circuit structure
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- 239000002356 single layer Substances 0.000 claims abstract description 109
- 239000010410 layer Substances 0.000 claims description 12
- 238000005452 bending Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 102100022087 Granzyme M Human genes 0.000 description 1
- 101000900697 Homo sapiens Granzyme M Proteins 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/184—Strip line phase-shifters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of lc circuit structure, the structure includes：Connected electric capacity and inductance, the inductance are the first single layer microstrip line, and the electric capacity is the second single layer microstrip line and the 3rd single layer microstrip line being spaced apart along straight line, and the first single layer microstrip line is connected with the second single layer microstrip line.When said structure is used under high band operation state, inductance value is more accurate, and capacitance can be adjusted to minimum state, while turn avoid the occurrence of electric capacity punctures；Also, the use of single layer microstrip line reduces the volume of circuit, has saved production cost.Correspondingly, low-passing LC chain structure disclosed by the invention, high pass lc circuit structure and high low pass digital phase shifter, similarly with above-mentioned technique effect.
Description
Technical field
The present invention relates to technical field of circuit design, more specifically to a kind of lc circuit structure.
Background technology
At present, microwave monolithic integrated circuit (MMIC) digital phase shifter receives and dispatches (T/R) in modern phased array radar system
In occupation of critical role in component, as wave beam control unit, the working condition of MMIC digital phase shifters is more, technical requirement
Strictly, with the further rise of research frequency, the design of MMIC digital phase shifters and the increasing of manufacture difficulty are caused.
For the phase shifter of big phase, typically using high Low-Pass Filter structure.The digital phase shifter of high Low-Pass Filter is mainly by opening
Close lc circuit structure to form, wherein forming the high-pass behavior of phase shifter with T-shaped lc circuit structure, formed with π type lc circuits structure
The low pass state of phase shifter.In traditional lc circuit structure, the impedance operator of lump original paper changes with the rise of frequency,
Wherein, traditional capacitance easily causes breakdown, and when required capacitance very little, numerical value is not in electric current and excessive voltage
It is stable；Spiral inductance is big in high band impedance variations, and the area of rotation can not determine, be not suitable with high band operation.In order to adapt to
The working condition of high band, technical staff replace electric capacity and inductance using double-layer microstrip-line, but in the engineering of reality, typically
There can be setting to the minimum length and minimum widith of microstrip line, when required capacitance very little, be replaced with double-layer microstrip-line
Electric capacity is difficult to capacitance value.
Therefore, how to design one kind for high low pass digital phase shifter and both adapt to high band operation, again can be with capacitance value
It is that those skilled in the art need to solve the problems, such as to the lc circuit structure of minimum state.
The content of the invention
It is an object of the invention to provide a kind of lc circuit structure, to realize that lc circuit both adapts to high band operation, again may be used
With capacitance value to minimum state.
To achieve the above object, the embodiments of the invention provide following technical scheme：
A kind of lc circuit structure, including：Connected electric capacity and inductance, the inductance are the first single layer microstrip line, the electricity
Hold the second single layer microstrip line and the 3rd single layer microstrip line to be spaced apart along straight line, the first single layer microstrip line and institute
The second single layer microstrip line is stated to be connected.
Wherein, the inductance is the single layer microstrip line of a bending.
Wherein, the electric capacity is formed for the second single layer microstrip line being spaced apart along straight line and the 3rd single layer microstrip line
Bimetallic plates band gap electric capacity, the opposite face of the second single layer microstrip line and the 3rd single layer microstrip line is respectively as described
The upper metallic plate of electric capacity and lower metallic plate.
Wherein, described in the air between the opposite face of the second single layer microstrip line and the 3rd single layer microstrip line is used as
The dielectric of electric capacity.
A kind of low-passing LC chain structure, including the lc circuit structure described in above-mentioned any one.
A kind of high pass lc circuit structure, including the lc circuit structure described in above-mentioned any one.
A kind of high low pass digital phase shifter, including the lc circuit structure described in above-mentioned any one.
By above scheme, a kind of lc circuit structure provided in an embodiment of the present invention, the structure includes：Connected
Electric capacity and inductance, the inductance are the first single layer microstrip line, and the electric capacity is that the second individual layer being spaced apart along straight line is micro-
Band line and the 3rd single layer microstrip line, the first single layer microstrip line are connected with the second single layer microstrip line.
It can be seen that a kind of lc circuit structure provided in an embodiment of the present invention, by the use of single layer microstrip line as inductance, in high band work
Make under state, inductance value is more accurate；By the use of two single layer microstrip lines being spaced apart along straight line as electric capacity, electricity is avoided
The occurrence of holding breakdown；It has been so designed that one kind both adapts to high band operation, again can be with capacitance value to minimum state
Lc circuit structure；Also, the use of single layer microstrip line reduces the volume of circuit, has saved production cost.Correspondingly, it is of the invention
A kind of low-passing LC chain structure, high pass lc circuit structure and the high low pass digital phase shifter that embodiment provides, similarly with upper
State technique effect.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of lc circuit structural representation disclosed in the embodiment of the present invention；
Fig. 2 is another lc circuit structural representation disclosed in the embodiment of the present invention；
Fig. 3 is a kind of high low pass digital phase shifter structural representation disclosed in the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
, again can be with to realize that lc circuit both adapts to high band operation the embodiment of the invention discloses a kind of lc circuit structure
Capacitance value is to minimum state.
Referring to Fig. 1, a kind of lc circuit structure provided in an embodiment of the present invention, including：
Connected electric capacity and inductance, the inductance are the first single layer microstrip line 101, and the electric capacity is along straight line interval
The the second single layer microstrip line 102 and the 3rd single layer microstrip line 103 of distribution, the first single layer microstrip line 101 and second list
Layer microstrip line 102 is connected.
Specifically, building the first single layer microstrip line 101 with GaAs PHEMT techniques, can be seen that from Smith's artwork
When frequency is up to 21GHz, fl transmission coefficient is located above Smith's artwork, and now the first single layer microstrip line 101, can in perception
As inductance.Compared to traditional spiral inductance, the first single layer microstrip line 101 is simple in construction, and coiling area is easy to determine, is applicable
In high-frequency work.
In the present embodiment, with the first single layer microstrip line 101, the second single layer microstrip line being spaced apart along straight line
102 and the 3rd single layer microstrip line 103 realize a lc circuit structure, avoid the defects of traditional capacitance easily punctures, reduce
The area of conventional helical inductance.Secondly, cost has been saved with single layer microstrip line, has reduced parasitic capacitance etc. and circuit is integrally tied
The influence of structure.
In the present embodiment, one end of the second single layer microstrip line 102 is connected with the first single layer microstrip line 101, the other end with
3rd single layer microstrip line 103 is separated by certain spacing.One end of first single layer microstrip line 101 and the phase of the second single layer microstrip line 102
Even, another termination input signal.One end of 3rd single layer microstrip line 103 is separated by certain spacing with the second single layer microstrip line 102,
Another termination output signal.It should be noted that can be by adjusting the second single layer microstrip line 102 and the 3rd single layer microstrip line
Spacing between 103, to change the capacitance of access circuit.
It can be seen that a kind of lc circuit structure that the present embodiment provides, by the use of the first single layer microstrip line 101 as inductance, in high frequency
Under section working condition, inductance value is more accurate；With the second single layer microstrip line 102 and the 3rd individual layer being spaced apart along straight line
Microstrip line 103 is used as electric capacity, avoids the occurrence of electric capacity punctures；It has been so designed that one kind both adapts to high band operation, again
Can be with the lc circuit structure of capacitance value to minimum state；Also, the use of single layer microstrip line reduces the volume of circuit, section
About production cost.
Referring to Fig. 2, another lc circuit structure provided in an embodiment of the present invention, including：
Connected electric capacity and inductance, the inductance are the single layer microstrip line 201 of a bending, and the electric capacity is straight along one
The bimetallic plates band gap electric capacity that the second single layer microstrip line 202 that line is spaced apart and the 3rd single layer microstrip line 203 are formed, described the
The opposite face of two single layer microstrip lines 202 and the 3rd single layer microstrip line 203 respectively as the electric capacity upper metallic plate and under
Metallic plate；Described in air between the second single layer microstrip line 202 and the opposite face of the 3rd single layer microstrip line 203 is used as
The dielectric of electric capacity.
Specifically, the electric capacity that the present embodiment provides is similar to the above embodiments, it is single to build second with GaAs PHEMT techniques
The layer single layer microstrip line 203 of microstrip line 202 and the 3rd, the second single layer microstrip line 202 are located at the 3rd single layer microstrip line 203
The single-layer metal of MET1 layers, dielectric of the middle air as electric capacity, material is thus formed a metallic plate-dielectric-metal
The bimetallic plates band gap electric capacity of plate.Wherein, the second single layer microstrip line 202 relative to the 3rd single layer microstrip line 203 side conduct
Upper metallic plate, the 3rd single layer microstrip line 203 is relative to the side of the second single layer microstrip line 202 as lower metallic plate.Centre be by
Substrate and the medium of air mixing, due to having coupling between microstrip line, just form an electric capacity, realize and use individual layer
Microstrip line is as electric capacity.
It can be seen that a kind of lc circuit structure provided in an embodiment of the present invention, electricity is used as by the use of the single layer microstrip line 201 of a bending
Sense, under high band operation state, inductance value is more accurate；Use the second single layer microstrip line being spaced apart along straight line
202 and the 3rd single layer microstrip line 203 formed bimetallic plates band gap electric capacity, avoid electric capacity breakdown the occurrence of；So set
Count one kind and both adapt to high band operation, again can be with the lc circuit structure of capacitance value to minimum state；Also, single layer microstrip
The use of line reduces the volume of circuit, has saved production cost.
Based on above-mentioned any embodiment, it is necessary to which explanation, a kind of lc circuit structure provided in an embodiment of the present invention can be with
Applied in high low pass digital phase shifter.T-shaped and π type lc circuits volume is reduced, in GaAs PHEMT techniques, application
This circuit structure, whole lc circuit is can be achieved with single layer microstrip line.Wherein, spiral inductance and tradition are substituted with single layer microstrip line
Electric capacity, high low pass digital phase shifter steady operation can be made in high band.By using the interval between two single layer microstrip lines and phase
To metal covering, realize an electric capacity, avoid breakdown danger.Meanwhile parasitic parameter and electricity when reducing Electromagnetic Simulation
The volume on road.
Based on above-mentioned any embodiment, it is necessary to illustrate, between the second single layer microstrip line and the 3rd single layer microstrip line
Spacing is traditionally arranged to be 5-10 millimeters, and certainly, technical staff can adjust the big of the spacing according to the demand of actual circuit
It is small, to change the capacitance for accessing circuit.
, can based on above-mentioned any embodiment, it is necessary to which explanation, the first single layer microstrip line are connected with the second single layer microstrip line
To regard this two single layer microstrip lines as a single layer microstrip line, i.e., regard the first single layer microstrip line as second single layer microstrip
A part for line, by the first single layer microstrip line and the second single layer microstrip line collectively as the second single layer microstrip line, then the present invention
The lc circuit structure that embodiment provides includes：
Connected electric capacity and inductance, the inductance are the second single layer microstrip line, and the electric capacity is second single layer microstrip
The bimetallic plates band gap that line and the 3rd single layer microstrip line being distributed with the second single layer microstrip line along same linear interval are formed
Electric capacity；Wherein, the opposite face of the second single layer microstrip line and the 3rd single layer microstrip line is respectively as the upper of the electric capacity
Metallic plate and lower metallic plate；Air conduct between the opposite face of the second single layer microstrip line and the 3rd single layer microstrip line
The dielectric of the electric capacity.Wherein, the second single layer microstrip line is both used as inductance, again the part as electric capacity.
Based on above-mentioned any embodiment, it is necessary to which explanation, the first single layer microstrip line, the second single layer microstrip line and the 3rd are single
The length of layer microstrip line can be adjusted according to the needs of actual circuit structure, meanwhile, the width of three single layer microstrip lines needs
Identical width is adjusted to according to actual circuit structure.The second single layer microstrip line and the 3rd single layer microstrip with same widths
Line is easy to store electric charge.
Specifically, the length of the first single layer microstrip line of adjustment and the second single layer microstrip line can change the inductance of access circuit
The size of value, technical staff can need that voluntarily to adjust the first individual layer micro- in practical work process according to actual circuit structure
Length with line and the second single layer microstrip line.And the 3rd single layer microstrip line is typically made as the minimum length of technique.
Referring to Fig. 3, the embodiment of the present invention additionally provides a kind of high low pass digital phase shifter, including above-mentioned any embodiment carries
A kind of lc circuit structure supplied.
Specifically, high low pass digital phase shifter is mainly used in phased array radar system transmitting-receiving subassembly, as wave beam
Control unit, the working condition of high low pass digital phase shifter is more, and technical requirement is strict, is carried with the frequency of working condition
Height, its structure design and making also should accordingly improve.The digital phase shifter of high low pass is mainly made up of switch lc circuit, in height
Logical numeral, which is shifted to, uses a kind of lc circuit structure provided in an embodiment of the present invention in device, when being operated in high band, inductance value is more
Add accurate；It is also possible to by the regulation in circuit to capacitance very little state, electric capacity is also not easy breakdown, whole LC electricity
The volume very little of line structure, has saved production cost.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (7)
1. a kind of lc circuit structure, including：Connected electric capacity and inductance, it is characterised in that the inductance is the first single layer microstrip
Line, the electric capacity are the second single layer microstrip line and the 3rd single layer microstrip line that are spaced apart along straight line, first individual layer
Microstrip line is connected with the second single layer microstrip line.
2. lc circuit structure according to claim 1, it is characterised in that the inductance is the single layer microstrip of a bending
Line.
3. lc circuit structure according to claim 1, it is characterised in that the electric capacity is spaced apart along straight line
The bimetallic plates band gap electric capacity that second single layer microstrip line and the 3rd single layer microstrip line are formed, the second single layer microstrip line and described
Upper metallic plate and lower metallic plate of the opposite face of 3rd single layer microstrip line respectively as the electric capacity.
4. lc circuit structure according to claim 3, it is characterised in that the second single layer microstrip line and the 3rd list
Dielectric of the air as the electric capacity between the opposite face of layer microstrip line.
5. a kind of low-passing LC chain structure, it is characterised in that including the lc circuit knot as described in claim 1-4 any one
Structure.
6. a kind of high pass lc circuit structure, it is characterised in that including the lc circuit knot as described in claim 1-4 any one
Structure.
7. a kind of high low pass digital phase shifter, it is characterised in that including the lc circuit knot as described in claim 1-4 any one
Structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710801260.2A CN107425238A (en) | 2017-09-07 | 2017-09-07 | A kind of lc circuit structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710801260.2A CN107425238A (en) | 2017-09-07 | 2017-09-07 | A kind of lc circuit structure |
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| Publication Number | Publication Date |
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| CN107425238A true CN107425238A (en) | 2017-12-01 |
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| CN201710801260.2A Pending CN107425238A (en) | 2017-09-07 | 2017-09-07 | A kind of lc circuit structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113871821A (en) * | 2021-09-13 | 2021-12-31 | 杭州泛利科技有限公司 | IPD technology-based broadband miniaturized phase shifter and high-gain GPS antenna |
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|---|---|---|---|---|
| TW200714143A (en) * | 2005-09-30 | 2007-04-01 | Accton Technology Corp | Printed circuit board having low-pass filtering function |
| CN202434677U (en) * | 2011-12-21 | 2012-09-12 | 北京普源精电科技有限公司 | High pass filter |
| CN203039051U (en) * | 2013-01-04 | 2013-07-03 | 成都信息工程学院 | Microstrip low-pass filter |
| CN106785258A (en) * | 2016-11-29 | 2017-05-31 | 中国电子科技集团公司第二十九研究所 | A kind of Wide stop bands microstrip line low pass filter and method for designing |
| CN207441926U (en) * | 2017-09-07 | 2018-06-01 | 广东工业大学 | Lc circuit structure, low-pass/high-pass lc circuit structure and digital phase shifter |
-
2017
- 2017-09-07 CN CN201710801260.2A patent/CN107425238A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200714143A (en) * | 2005-09-30 | 2007-04-01 | Accton Technology Corp | Printed circuit board having low-pass filtering function |
| CN202434677U (en) * | 2011-12-21 | 2012-09-12 | 北京普源精电科技有限公司 | High pass filter |
| CN203039051U (en) * | 2013-01-04 | 2013-07-03 | 成都信息工程学院 | Microstrip low-pass filter |
| CN106785258A (en) * | 2016-11-29 | 2017-05-31 | 中国电子科技集团公司第二十九研究所 | A kind of Wide stop bands microstrip line low pass filter and method for designing |
| CN207441926U (en) * | 2017-09-07 | 2018-06-01 | 广东工业大学 | Lc circuit structure, low-pass/high-pass lc circuit structure and digital phase shifter |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113871821A (en) * | 2021-09-13 | 2021-12-31 | 杭州泛利科技有限公司 | IPD technology-based broadband miniaturized phase shifter and high-gain GPS antenna |
| CN113871821B (en) * | 2021-09-13 | 2022-05-13 | 杭州泛利科技有限公司 | IPD technology-based broadband miniaturized phase shifter and high-gain GPS antenna |
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