CN207425843U - For motor-driven integrated power module and intelligent power module - Google Patents
For motor-driven integrated power module and intelligent power module Download PDFInfo
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- CN207425843U CN207425843U CN201721289551.XU CN201721289551U CN207425843U CN 207425843 U CN207425843 U CN 207425843U CN 201721289551 U CN201721289551 U CN 201721289551U CN 207425843 U CN207425843 U CN 207425843U
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Abstract
This application discloses one kind to be used for motor-driven integrated power module and intelligent power module.The integrated power module includes：Lead frame, the lead frame have multiple die pads and multiple pins；And it is fixed on multiple high-side transistors and multiple low side transistors, first grid driving chip, second grid driving chip and supplementary module in the multiple die pad；Wherein, the first grid driving chip is used to provide gate drive signal for the multiple high-side transistor, the second grid driving chip is used to provide gate drive signal for the multiple low side transistors, and the supplementary module is arranged between the first grid driving chip and the second grid driving chip.The integrated power module improves chip layout and cabling in module using supplementary module, so as to improve the reliability of integrated power module, promotes production yield and efficiency.
Description
Technical field
The utility model is related to integrated semiconductor technology field, more particularly, to one kind for motor-driven integrated
Power module and intelligent power module.
Background technology
In motor driving application, the driving voltage that motor-drive circuit generates three-phase from DC power supply may be employed, use
It powers in three phase electric machine.Existing motor-drive circuit includes control chip, multiple grid drive chips and by multiple crystalline substance
The full-bridge circuit of body pipe composition.With people for chip it is highly integrated, miniaturization demand, motor-drive circuit is formed
Integrated power module, to realize motor control and power drive integration.
The schematic circuit and internal perspective view of integrated power module according to prior art is shown respectively in Fig. 1 and 2.Such as
Shown in Fig. 1, existing motor-drive circuit includes motor control special chip A1, the first to the 3rd grid drive chip U1 extremely
U3 and first to the 3rd high-side transistor Q11, Q21 and Q31, first to the 3rd low side transistors Q12, Q22 and Q32.Motor
Control special chip A1 is used to generate the logic control signal of predetermined phase difference.First grid driving chip U1 controls for generating
Signal, for controlling the conducting state of the first high-side transistor Q11 being connected in series and the first low side transistors Q12, in the two
Intermediate node U generate at any time periodically variable U phases export signal.Similarly, in the second high-side transistor Q21 and second
The intermediate node V of low side transistors Q22 generates V phases and exports signal and in the 3rd high-side transistor Q31 and the 3rd downside crystal
The intermediate node W of pipe Q32 generates W phases and exports signal.
Grid drive chip will be as shown in Fig. 2, integrated power module 100 will control chip, grid drive chip and transistor
On same lead frame.In integrated power module 100, first to the 3rd high-side transistor Q11, Q21, Q31 and
One to the 3rd low side transistors Q12, Q22, Q32 is transversely juxtaposed on independent core wire pad.Due to being needed between core wire pad
Leave safe distance, the size in transistor transverse direction is restricted.The first to the 3rd grid drive chip of grid drive chip
The position selection of U1 to U3 and motor control special chip A1 occupy longitudinal space significantly, further such that transistor longitudinal direction
Size is also restricted.Since the size of transistor is restricted, the output power of integrated power module 100 is also subject to
Limitation.Further, in integrated power module 100, the source electrode of first to the 3rd low side transistors Q12, Q22, Q32 is all connected with
To same pin PGND, single resistance sampling is above can be only applied in system application, it can not application extension or upgrading.
In addition, the number of chips in integrated power module 100 up to 4.It is connected between chip using lead, therefore,
Inside integrated power module 100, number of leads is more, random, miscellaneous, long, when encapsulation be easily stressed occur lead bending, short circuit,
Collapse, leakage lead, wire breaking the problems such as so that the fraction defective of module production increases, and production cost increases.High pressure pin with it is low
Pressure pipe foot sets confusion, adds the complexity of peripheral PCB trace.
In addition, the first to the 3rd raster data model of grid drive chip in the integrated power module 100 that the prior art provides
Chip U1 to U3 includes bootstrap diode, and due to the limitation of production technology, the resistance value of resistance of booting is higher than in 300 Ω or so
General more than ten times of module, may result in system poor starting or slack-off, influences system performance.
Further, the first to the 3rd grid drive chip U1 of grid drive chip in the integrated power module 100 is extremely
The functions such as the not integrated overcurrent protections of U3, overheat protector, FO alarms so that the layout designs of the integrated power module 100 can not
It is such as additional to increase low voltage gate driving mould for repeating to be packaged into the integrated power module of not built-in motor control special chip A1
Block, pin leads again can be extremely difficult.
Utility model content
In view of the above problems, the purpose of this utility model is to provide a kind of integrated power module, corpusculum can be being realized
The low cost of product package module, multi-pipe pin realize high-power and extendable functions intelligent power module on the basis of being laid out.
It is according to the present utility model in a first aspect, providing a kind of for motor-driven integrated power module, feature exists
In, including：Lead frame, the lead frame have multiple die pads and multiple pins；And it is fixed on the multiple tube core
Multiple high-side transistors and multiple low side transistors, first grid driving chip, second grid driving chip and auxiliary on pad
Module；Wherein, the first grid driving chip is used to provide gate drive signal for the multiple high-side transistor, and described the
Two grid drive chips are used to provide gate drive signal for the multiple low side transistors and control special core including motor
The function of piece and the function of including motor control special chip, the supplementary module are arranged in the first grid driving chip
Between the second grid driving chip.
Preferably, the second grid driving chip includes motor control special module and low voltage gate drive module, institute
Stating second grid driving chip includes first to the 3rd group of pin, and first group of pin is used to provide lowside gate drive signal, the
Two groups of pins for providing high side gate control signal, analog signal and I/O signals, for receiving Hall believe by the 3rd group of pin
Number.
Preferably, the motor controls special module and via second group of pin and the second grid driving chip
External lead provides high side gate control signal to the first grid driving chip, via the 3rd group of pin and described
Lead outside second grid driving chip obtains hall signal from the external of the integrated power module, with via described second
Wiring inside grid drive chip provides lowside gate control signal to the low voltage gate drive module.
Preferably, the supplementary module includes the first to the 3rd side, and the integrated power module further includes first to the
Second group of pin of the second grid driving chip and the 3rd group of pin are connected to institute by three groups of leads, first group of lead
The first side of supplementary module is stated, the second side of the supplementary module is connected to the first grid by second group of lead
The corresponding pin of second group of pin with the second grid driving chip of driving chip, the 3rd group of lead will
3rd side of the supplementary module is connected to described with the second grid driving chip of the integrated power module
Three groups of corresponding pins of pin, wherein, the supplementary module utilizes different sides by lead for reducing wire length
Direction of routing be separately directed to different directions.
Preferably, the first grid driving chip is high pressure grid drive chip, for providing high pressure raster data model letter
Number and auxiliary cabling and signal handoff functionality is provided.
Preferably, further include：First side and second side relative to each other：Multiple high pressures positioned at the first side
Pin；And multiple low pressure pins positioned at the second side, the multiple low pressure pin include multiple control signal pin,
Multiple analog signal pins and multiple I/O signal pins.
Preferably, the multiple control signal pin is believed for providing high side gate control signal and lowside gate control
Number, and for providing the control signal pin of high side gate control signal adjacent to the first grid driving chip, use
In provide lowside gate control signal the control signal pin adjacent to the second grid driving chip.
Preferably, further include：First side and second side relative to each other：Multiple high pressures positioned at the first side
Pin；And multiple low pressure pins positioned at the second side, the multiple low pressure pin include multiple hall signal pins,
Multiple analog signals and multiple I/O signal pins, wherein, the multiple hall signal pin abuts the supplementary module, and
Multiple low pressure pins positioned at the second side, the multiple low pressure pin include centre position.
Preferably, the integrated power module further includes multiple reserved pins, and the reserved pin may be connected to the first grid
Pole driving chip, for expanding the function of the integrated power module.
Preferably, further include：The first area being separated from each other and second area, wherein, it is described in the first area
Multiple high-side transistors and the multiple low side transistors arrange along a first direction successively, described in the second area
First grid driving chip, the supplementary module, the second grid driving chip arrange along a first direction successively, and described
One group of lead and second group of lead extend approximately along first direction, and the 3rd group of lead prolongs approximately along second direction
It stretches, the first direction is perpendiculared to one another with the second direction.
Preferably, the multiple high-side transistor is fixed in public die pad, the multiple low side transistors difference
It is fixed in respective die pad.
Preferably, high pressure belt is further included, the high pressure belt receives high side driving supply voltage, and around the multiple height
Side transistor.
Preferably, the multiple high-side transistor includes the first to the 3rd high-side transistor, the multiple low side transistors
Including the first to the 3rd low side transistors, first high-side transistor and first low side transistors are connected company via pin
It connects, and U phase output voltages is provided in intermediate node, second high-side transistor is with second low side transistors via pin
It is connected in series, and V phase output voltages is provided in intermediate node, the 3rd high-side transistor is passed through with the 3rd low side transistors
It is connected in series by lead, and W phase output voltages is provided in intermediate node.
Preferably, the multiple die pad includes the first to the 5th die pad, wherein, the described first to the 3rd high side crystal
Pipe is fixed on public first die pad, and the described first to the 3rd low side transistors are separately fixed at the second to the 4th die pad
On, the first grid driving chip and the second grid driving chip are fixed on the 5th public tube core.
Preferably, the source electrode of the multiple low side transistors is connected to corresponding external sampling electricity via pin respectively
Resistance.
Preferably, the spacing between pin adjacent to each other in the multiple high pressure pin is n times of the normal pitch,
Wherein n is the integer more than or equal to 1.
Preferably, according between adjacent pin voltage difference set n numerical value, with meet electric equipment compartment away from requirement.
Second aspect according to the present utility model provides a kind of intelligent power module, including above-mentioned integrated power module.
According to the integrated power module of the utility model embodiment, using supplementary module improve chip layout in module and
Cabling, so as to change the trend of lead and avoid with intersecting between other leads, so as to fulfill flexible chip layout
And cabling.Therefore, spacing is sufficiently wide between lead, can effectively reduce the electromagnetic interference between lead, when module encapsulates not
Phenomena such as being susceptible to short circuit, fracture, collapse of silk, adds the reliability of module production, improves production yield and efficiency.
In a preferred embodiment, inside integrated power module, high-side transistor and low side transistors are provided separately.It is more
A high-side transistor is arranged in same die pad, and multiple low side transistors are arranged in respective die pad.It therefore can be with
Reduction transistor corresponds to the safe distance between die pad so that larger sized crystalline substance can be placed on the integrated power module
Body pipe, so as to improve the output power of integrated power module 300.In the outside of integrated power module respectively by three independences
Sampling resistor be connected to the source electrodes of three low side transistors, so as to be sampled respectively to each phase in three-phase.Cause
This, which can realize a variety of motor control algorithms, so as to easily extend and upgrade.
In a preferred embodiment, inside integrated power module, high pressure belt is further included.All high pressure pins are all provided with meter and exist
The one side of module, all low pressure pins are in the opposite side of module, and high pressure belt is for separating high-side transistor and low side transistors.It should
Placement scheme prevented well between high pressure pin and low pressure pin because electric equipment compartment away from not enough due to cause pin leak electricity or circuit
The risk of damage.In the wiring of printed circuit board (PCB), it is more advantageous to high pressure cabling and low pressure cabling and separates, avoid the mutual of cabling
It influences.
In a preferred embodiment, multiple independent bootstrap diodes are set inside integrated power module.It is the multiple
Bootstrap diode is formed in same P type substrate, and drawing needed for the anode of each diode is connected respectively so as to save
Line.Also, multiple bootstrap diodes are arranged on the design in same P type substrate, reduces the safe distance of chip chamber, reaches
To the purpose for saving space.In addition, the resistance value of bootstrap diode can be adjusted on demand, corresponding bootstrapping is only needed to change
Diode chip for backlight unit can achieve the goal.Opposite, the bootstrap diode of conventional module is integrated in high pressure grid drive chip
Portion, series resistance can not be decreased to ideal value, so as to influence the performance of motor driven systems.
In a preferred embodiment, the distribution of the integrated power module low pressure pin has carried out meticulously rational design.It will
The blank pipe foot of integrated power module is used for new hall signal pin.Integrated power module and the corresponding pipe of hall signal pin
Foot is respectively positioned on the one side centre position of neighbouring second supplementary module of integrated power module.To be vulnerable to interference requirement close proximity to
All design is placed on integrated power module adjacent to the one side of second grid driving chip to the analog signal pin of chip, by second gate
Pole driving chip direct lead wire is connected in the respective pin of integrated power module.Last 3 I/O pins (FG, FGS, CCW) and
3 reserved pins are then connected to collection module 300 adjacent to first grid success rate by the auxiliary lead of first grid driving chip C11
In the respective pin of the one side of driving chip.
Miniaturization and multifunction are realized according to the integrated power module of above-described embodiment, and utilize supplementary module bridge
It connects lead and improves reliability.For example, in the area of 22mm*11.4mm, except realizing motor control and power drive one
Outside body, relatively large-sized transistor chip can also be placed, has reached the purpose for increasing power area.For example, crystal
Tube chip has first size and the second size respectively on first direction and second direction perpendicular to one another, and the first size exists
In the range of 0.6 millimeter to 2.5 millimeters, second size is in the range of 0.6 millimeter to 5 millimeters.The module is also integrated with
Numerous defencive functions such as BSD, excess temperature, overcurrent, current limliting, under-voltage can also carry out Function Extension to module, reach higher application
It is required that.
Description of the drawings
By the description referring to the drawings to the utility model embodiment, above-mentioned and other mesh of the utility model
, feature and advantage will be apparent from.
Fig. 1 shows the schematic circuit of integrated power module according to prior art.
Fig. 2 shows the internal perspective view of integrated power module according to prior art.
Fig. 3 shows the schematic circuit of the integrated power module according to the utility model embodiment.
Fig. 4 shows the pin distribution map of the first grid driving chip and second grid driving chip in Fig. 3.
Fig. 5 shows the layout schematic block diagram of the second grid driving chip in Fig. 3.
Fig. 6 shows the internal perspective view of the integrated power module according to the utility model embodiment.
Specific embodiment
Hereinafter reference will be made to the drawings is more fully described the utility model.In various figures, identical element is using similar
Reference numeral represent.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to it is not shown
Some well known parts.
Many specific details of the utility model, such as the structure of device, material, size, place is described hereinafter
Science and engineering skill and technology, to be more clearly understood that the utility model.But just as the skilled person will understand,
The utility model can not be realized according to these specific details.
In this application, term " high pressure pin " represents to be likely to occur the pin of high pressure conditions in chip or encapsulating structure,
Term " low pressure pin " represents to locate the pin of low-pressure state in chip or encapsulating structure always.
The utility model can be presented in a variety of manners, some of them example explained below.
Fig. 3 shows the schematic circuit of the integrated power module according to the utility model embodiment.
The integrated power module 300 includes first and second grid drive chip U21, U22, the first supplementary module C1, the
Two supplementary module C2 and first to the 3rd high-side transistor Q11, Q21 and Q31, the first to the 3rd low side transistors Q12, Q22
And Q32.
In this embodiment, second grid driving chip U22 further includes the function of motor control special chip.Second grid
A part of region of driving chip U22 controls special module for motor, and another part region is used for low voltage gate drive module,
Being electrically connected between motor control special module and low voltage gate drive module is realized in the inside of second grid driving chip U22
It connects.Further, second grid driving chip U22 can also provide auxiliary cabling and signal handoff functionality.It is driven in second grid
Motor control special module is electrically connected by the outside of dynamic chip via the second supplementary module C2 with first grid driving chip U21.
Motor is controlled special module and low voltage gate control module to integrate same by integrated power module according to the embodiment
In one chip, therebetween using internal connection, using the second supplementary module for motor control special module and the first grid
Electrical connection between the driving chip of pole.Other aspects of integrated power module according to the embodiment and collection according to first embodiment
Success rate module is identical, and this will not be detailed here.
The integrated power module further integrates motor control function, and reduces number of leads.Using the first auxiliary
Module and the second supplementary module can improve the interior layout and cabling of integrated power module 300, improve integrated power module
Reliability improves production yield and efficiency.
Fig. 4 shows the pin distribution map of the first grid driving chip in Fig. 3.
First grid driving chip U21 for generating control signal, for control the first to the 3rd high-side transistor Q11,
The conducting state of Q21 and Q31.
First grid driving chip U21 and second grid driving chip U22 includes multiple pins respectively, pin title and retouches
It states as shown in the table.
The pin title of 1. first grid driving chip U21 of table and its description
| Pin title | Description |
| VBU | U phases high side drives suspension supply voltage |
| VBV | V phases high side drives suspension supply voltage |
| VBW | W phases high side drives suspension supply voltage |
| HINU | U phase high sides signal inputs |
| HINV | V phase high sides signal inputs |
| HINW | W phase high sides signal inputs |
| VCCH | Supply voltage |
| COM1 | Ground |
| SD | High side shut-off input |
| WVS | The driving of W phases high side is with suspending power supply |
| WHO | W phases high side gate exports signal |
| VVS | The driving of V phases high side is with suspending power supply |
| VHO | V phases high side gate exports signal |
| UVS | The driving of U phases high side is with suspending power supply |
| UHO | U phases high side gate exports signal |
Pin HINU, HINV, HINW of first grid driving chip U21 is respectively connected to second grid driving chip U22
UH, VH and WH, for receiving high side control signal, pin UHO, VHO, WHO are respectively connected to the first to the 3rd high side crystal
The grid of pipe Q11, Q21 and Q31, for providing high side drive signal.
At work, second grid driving chip U22 detects the position of the rotor magnet of motor according to Hall sensor, point
High side control signal and low side control signal are not provided for first grid driving chip U21 and second grid driving chip U22.Into
One step, first grid driving chip U21 and second grid driving chip U22 are respectively used to control high-side transistor and downside crystalline substance
Body pipe, so as to provide three-phase output voltage for the three-phase windings of motor.Therefore, second grid driving chip U22 is according to motor
The position of rotor magnet is reacted, so as to be encouraged accordingly to three-phase windings, to generate needed for rotor magnet rotation
Torque.
Fig. 5 shows the layout schematic block diagram of the second grid driving chip in Fig. 3.
Second grid driving chip U22 includes motor and controls special module ASIC and low-side gate drive module LVIC.
Motor is controlled special module and low voltage gate control module to integrate in same core by second grid driving chip U22
In piece.
In the inside of second grid driving chip U22, motor controls three low side control signal output terminals of special module
UL, VL and WL are connected with three low side control signal input terminals LINU, LINV and LINU of low voltage gate control module, motor
Output end of pressure-stabilizing VREG, supply voltage VCC and the ground COM for controlling special module are defeated with the voltage stabilizing of low voltage gate control module respectively
Enter to hold VREG, supply voltage VCC to be connected with ground COM.
Second grid driving chip U22 includes multiple pins, wherein at least includes not in the pin of inside connection, pin name
Claim and be described as follows shown in table.
Table 2. includes pin title and its description of the second grid driving chip of motor control special module
Second grid driving chip U22 is the integrated chip for including motor control and two kinds of functions of low-voltage driving.Motor control
Connection between special module and low voltage gate drive module processed is chip internal cabling, so as to reduce the number of outside lead
Amount, and avoid being disturbed and respond rapider, production yield and product reliability are more preferable.In the integrated chip scheme,
Can the repeat function circuits of two modules merge into a circuit, for example, power supply circuit, so as to save chip area and
Pin so that the possibility and diversity of encapsulation become more.The integrated chip scheme can extend the resources of chip of saving
Other functions, such as：Data exchange, timesharing power saving, overvoltage detection protection etc..
Fig. 6 shows the internal perspective view of the integrated power module according to the utility model embodiment.
Integrated power module 300 includes lead frame.It can be with according to the integrated power module 300 of the utility model embodiment
Use the lead frame 210 identical with first embodiment.
According to the integrated power module 300 of the utility model embodiment and first embodiment the difference is that second gate
Pole driving chip U22 includes motor control special module and low voltage gate drive module and using the second supplementary module C2 reality
Existing lead bridge joint and integrated power module 300 between first grid driving chip U21 and second grid driving chip U22
Pin title is different.Hereafter the something in common of the two is no longer described in detail.
First grid driving chip U21 and second grid driving chip U22, the second supplementary module C2 are located at the 5th die pad
On 215, the second supplementary module C2 is located between first grid driving chip U21 and second grid driving chip U22.
In the present embodiment, be internally integrated first grid driving chip U21 and the second grid of integrated power module 300 drive
Dynamic chip U22 and first to the 3rd bootstrap diode B1, B2, B3.First grid driving chip U21 is high pressure raster data model
Chip, second grid driving chip U22 are low voltage gate driving chip.First grid driving chip U21 and second grid driving
The major function of chip U22 sees above the content described with reference to Figure 4 and 5.In alternate embodiments, the first to the 3rd bootstrapping
Diode B1, B2, B3 can be located at outside integrated power module 300 or be integrated in high pressure grid drive chip.
Second supplementary module C2 is for aiding in cabling, to improve the interior layout of integrated power module 300 and cabling.Second
Supplementary module C2 is low-cost chip, such as only includes substrate, wiring layer and pad.Optionally, the second supplementary module C2 may be used also
To include active device, signal conversion is used to implement.In the present embodiment, second grid driving chip U22 is controlled including motor
The function of special module, therefore including controlling the relevant multiple pins of special module with motor.
Integrated power module 300 includes multiple pins, not only including the above-mentioned pin being connected with die pad, but also including
The multiple pins being connected using lead with chip.It the pin title of integrated power module 300 and its is described as follows shown in table.
The pin title of 3. integrated power module of table and its description
The number of pin of integrated power module 300 according to the embodiment and the integrated power module of position and first embodiment
300 is identical, however, 300 phase of integrated power module of the pin title and function of the integrated power module 300 and first embodiment
Than there is difference, and including the second newly-increased supplementary module C2.The difference of embodiment and first embodiment is hereafter only described
The something in common of the two is no longer described in detail in part.
As shown in fig. 6, inside integrated power module 300, lead that second grid driving chip U22 is connected includes the
One to the 3rd group of lead.According to the difference of lead connection mode, the pin of second grid driving chip U22 can be divided into first to
3rd group of pin.First group of pin includes pin ULO, VLO, WLO for providing gate drive signal, respectively via first group
Lead is connected with three low side transistors.Second group of pin includes the control signal pin for high pressure grid drive chip
(UH, VH, WH etc.), analog signal pin (VSP, RT, PC, PCT, SNS etc.) and I/O pins (FG, FGS, CCW etc.) and provided pipe
Foot, the 3rd group of pin include pin HWN, HWP, HVN, HVP, HUN, HUP for receiving hall signal.Second group of pin and
Three groups of pins are connected to the second supplementary module C2 via first group of lead.Further, second group of lead is by second group of pin phase
The lead of pass is connected to first grid driving chip U21 from the second supplementary module C2, and the 3rd group of lead is related by the 3rd group of pin
Lead the respective pin of integrated power module 300 is connected to from the second supplementary module C2.
The integrated power module 300 includes first side and second side relative to each other.It is set in first side multiple
High pressure pin, including：DC power supply the anode P1 and P2 being shown in Table 3, high side driving suspension supply voltage end VBU, VBV,
VBW, output terminal U, V, W.Multiple low pressure pins are set in second side, including multiple hall signal pins, multiple analog signals
Pin and multiple I/O signal pins.The multiple hall signal pin includes：Hall input terminal HWN, HWP, HVN, HVP, HUN,
HUP etc..The multiple analog signal pin includes：Output end of pressure-stabilizing VREG, speed electric input terminal VSP, Carrier frequency configuration end RT,
Phase controlling input terminal PC, VSP imbalance output terminal PCT, overcurrent sensing input terminal SNS etc..The multiple I/O signal pins include
FG signal output part FG, FG signaling switches FGS, direction switch CCW etc..
In the integrated power module 300, the spacing in above-mentioned multiple low pressure pins between pin adjacent to each other is mark
Quasi- spacing.Spacing in above-mentioned high pressure pin between pin adjacent to each other is n times of the normal pitch, wherein n for more than
Integer equal to 1.For example, according between adjacent pin voltage difference set n numerical value, with meet electric equipment compartment away from requirement.
The low pressure pin distribution of the integrated power module 300 has carried out meticulously rational design.By integrated power module 300
Blank pipe foot for new the 3rd group of pin HWP, HVN, HVP, HUN, HUP.Integrated power module 300 and the 3rd group of pin HWP,
The corresponding pin of HVN, HVP, HUN, HUP is respectively positioned in the one side of neighbouring second supplementary module C2 of integrated power module 300
Between position.Analog signal pin (VSP, RT, PC, PCT, SNS etc.) of the interference requirement close proximity to chip will be vulnerable to, all set
Meter is placed on integrated power module 300 adjacent to the one side of second grid driving chip U22, direct by second grid driving chip U22
Lead is connected in the respective pin of integrated power module 300.Last 3 I/O pins (FG, FGS, CCW) and 3 reserved pins
Integrated power module 300 is then connected to adjacent to first grid driving chip U21 by the auxiliary lead of first grid driving chip U21
One side respective pin on.
Second supplementary module C2 is located between first grid driving chip C11 and second grid driving chip U22 so that the
Second group of pin HWP, HVN, HVP, HUN, HUP of two grid drive chip U22 can be via first group of lead, the second auxiliary mould
Block C2 and the 3rd group of lead is connected to the respective pin of integrated power module 300.
Second supplementary module C2 is by second group of pin of second grid driving chip U22 and the lead cabling of the 3rd group of pin
Direction is separately directed to two different directions, i.e., is separately directed to two different sides from a side of the second supplementary module C2
Side.Second supplementary module C2 can be to avoid intersecting between the 3rd group of lead and the 4th group of lead, and reduces the length of lead
Degree, so as to improve the reliability of power package module 300.Further, second grid is driven core by the second supplementary module C2
The Hall input pin of piece U22 concentrates on the one side centre position of the neighbouring second supplementary module C2 of integrated power module 300, from
And chip layout is improved, it realizes same lead frame and is compatible with two or more chip layout modes, thus the integrated side
The lead frame of case has compatibility and scalability.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Non-exclusive inclusion, so that process, method, article or equipment including a series of elements not only will including those
Element, but also including other elements that are not explicitly listed or further include as this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
Also there are other identical elements in process, method, article or equipment including the element.
Embodiment according to the utility model as described above, these embodiments there is no all details of detailed descriptionthe,
Also it is only the specific embodiment not limit the utility model.Obviously, as described above, many modification and change can be made
Change, change including but not limited to the local structure of circuit, the replacement to the type or model of component.This specification is chosen
And these embodiments are specifically described, it is the principle and practical application in order to preferably explain the utility model, so that affiliated skill
Art field technology personnel can be used using the utility model and the modification on the basis of the utility model well.This practicality is new
Type is limited only by the claims and their full scope and equivalents.
Claims (18)
1. one kind is used for motor-driven integrated power module, which is characterized in that including：
Lead frame, the lead frame have multiple die pads and multiple pins；And
The multiple high-side transistors being fixed in the multiple die pad and multiple low side transistors, first grid driving chip,
Second grid driving chip and supplementary module；
Wherein, the first grid driving chip is used to provide gate drive signal for the multiple high-side transistor,
The second grid driving chip includes motor control special module and low voltage gate drive module, and the low voltage gate drives
Dynamic model block is used to provide gate drive signal for the multiple low side transistors,
The supplementary module is arranged between the first grid driving chip and the second grid driving chip, for bridging
Lead between the first grid driving chip and the second grid driving chip.
2. integrated power module according to claim 1, which is characterized in that the supplementary module includes the first to the 3rd side
The direction of routing of lead is separately directed to not by side, the supplementary module for reducing wire length using different sides
Same direction.
3. integrated power module according to claim 2, which is characterized in that the second grid driving chip includes first
To the 3rd group of pin, for providing lowside gate drive signal, second group of pin is used to provide high side gate control first group of pin
Signal processed, analog signal and I/O signals, the 3rd group of pin is for receiving hall signal.
4. integrated power module according to claim 3, which is characterized in that the motor controls special module and via institute
It states the lead outside second group of pin and the second grid driving chip and provides high side grid to the first grid driving chip
Pole control signal, via the lead outside the 3rd group of pin and the second grid driving chip from the integrated power mould
The external of block obtains hall signal, to drive mould to the low voltage gate via the wiring inside the second grid driving chip
Block provides lowside gate control signal.
5. integrated power module according to claim 4, which is characterized in that the supplementary module includes the first to the 3rd side
Side, the integrated power module further include first to the 3rd group of lead,
Second group of pin of the second grid driving chip and the 3rd group of pin are connected to described auxiliary by first group of lead
The first side of module is helped,
Second group of lead the second side of the supplementary module is connected to the first grid driving chip with it is described
The corresponding pin of second group of pin of second grid driving chip,
The 3rd group of lead by the 3rd side of the supplementary module be connected to the integrated power module with described second
The 3rd group of corresponding pin of pin of grid drive chip.
6. integrated power module according to claim 4, which is characterized in that the first grid driving chip is high-voltage grid
Pole driving chip, for providing high pressure gate drive signal and providing auxiliary cabling and signal handoff functionality.
7. integrated power module according to claim 2, which is characterized in that further include：
First side and second side relative to each other：
Multiple high pressure pins positioned at the first side；And
Multiple low pressure pins positioned at the second side, the multiple low pressure pin include multiple hall signal pins, multiple
Analog signal and multiple I/O signal pins,
Wherein, the multiple hall signal pin abuts the supplementary module, and positioned at multiple low pressure of the second side
Pin, the multiple low pressure pin include centre position.
8. integrated power module according to claim 7, which is characterized in that the integrated power module further includes multiple pre-
Pin is stayed, the reserved pin may be connected to first grid driving chip, for expanding the function of the integrated power module.
9. integrated power module according to claim 5, which is characterized in that further include：
The first area being separated from each other and second area,
Wherein, in the first area, the multiple high-side transistor and the multiple low side transistors are successively along first
Direction arranges,
In the second area, the first grid driving chip, the supplementary module, the second grid driving chip according to
It is secondary to arrange along a first direction,
First group of lead and second group of lead extend approximately along first direction, the 3rd group of lead approximately along
Second direction extends, and the first direction is perpendiculared to one another with the second direction.
10. integrated power module according to claim 1, which is characterized in that the multiple high-side transistor is fixed on public affairs
In common die pad, the multiple low side transistors are separately fixed in respective die pad.
11. integrated power module according to claim 10, which is characterized in that further include high pressure belt, the high pressure belt connects
High side driving supply voltage is received, and around the multiple high-side transistor.
12. integrated power module according to claim 1, which is characterized in that the multiple high-side transistor includes first
To the 3rd high-side transistor, the multiple low side transistors include the first to the 3rd low side transistors,
First high-side transistor is connected in series with first low side transistors via pin, and provides U in intermediate node
Phase output voltage,
Second high-side transistor is connected in series with second low side transistors via pin, and provides V in intermediate node
Phase output voltage,
3rd high-side transistor is connected in series with the 3rd low side transistors via lead, and provides W in intermediate node
Phase output voltage.
13. integrated power module according to claim 12, which is characterized in that the multiple die pad includes first to the
Five die pads, wherein, the described first to the 3rd high-side transistor is fixed on public first die pad, and described first to the 3rd
Low side transistors are separately fixed in the second to the 4th die pad, the first grid driving chip and second grid driving
Chip is fixed on the 5th public tube core.
14. integrated power module according to claim 2, which is characterized in that the source electrode of the multiple low side transistors point
Corresponding external sampling resistance is not connected to via pin.
15. integrated power module according to claim 7, which is characterized in that adjacent to each other in the multiple low pressure pin
Pin between spacing be normal pitch.
16. integrated power module according to claim 15, which is characterized in that adjacent to each other in the multiple high pressure pin
Pin between spacing be n times of the normal pitch, wherein n is the integer more than or equal to 1.
17. integrated power module according to claim 16, which is characterized in that set according to the voltage difference between adjacent pin
Put the numerical value of n, with meet electric equipment compartment away from requirement.
18. a kind of intelligent power module, including claim 1 to 17 any one of them integrated power module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721289551.XU CN207425843U (en) | 2017-09-30 | 2017-09-30 | For motor-driven integrated power module and intelligent power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721289551.XU CN207425843U (en) | 2017-09-30 | 2017-09-30 | For motor-driven integrated power module and intelligent power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207425843U true CN207425843U (en) | 2018-05-29 |
Family
ID=62313433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721289551.XU Withdrawn - After Issue CN207425843U (en) | 2017-09-30 | 2017-09-30 | For motor-driven integrated power module and intelligent power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207425843U (en) |
-
2017
- 2017-09-30 CN CN201721289551.XU patent/CN207425843U/en not_active Withdrawn - After Issue
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