CN207405234U - A kind of device for being used to prepare nitride material - Google Patents
A kind of device for being used to prepare nitride material Download PDFInfo
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- CN207405234U CN207405234U CN201721384024.7U CN201721384024U CN207405234U CN 207405234 U CN207405234 U CN 207405234U CN 201721384024 U CN201721384024 U CN 201721384024U CN 207405234 U CN207405234 U CN 207405234U
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Abstract
The utility model discloses a kind of device for being used to prepare nitride material, including cavity, gas ionization device, metal source generating device, vacuum system, sample stage, cavity heating unit, vacuum meter, thermometer and film thickness gauge and control system, wherein：Cavity is made of the upper cavity that is separated from each other and can be integrated with lower chamber; metal source generating device includes crucible, coil and metal protector; metal protector is made of stool and blocking cover; vacuum system includes dry pump, molecular pump and cryogenic pump, and sample stage includes slide rack, substrate cooling device and sample stage rotating device.The mode that the utility model prepares nitride is anion cation successively accumulation mode, and there is preferable quality of materials and faster nitride to prepare rate.The utility model have low energy consumption, quality of materials is high, carbon pollution is low, without solute segregation and production capacity it is big many advantages, such as.
Description
Technical field
The utility model is related to light emitting semiconductor device fields, are used for more particularly, to a kind of based on chemical vapor deposition
Prepare nitride material（Such as gallium nitride, aluminium nitride, indium gallium nitrogen and aluminium indium gallium nitrogen）Device.
Background technology
Nitride material is widely used in light emitting diode, electronic device, solar cell etc. because of its excellent performance
Field possesses huge market and tempting application prospect.
Current nitride material is mainly prepared by Metalorganic chemical vapor deposition method, institute in preparation process
Device-MOCVD is complicated, involve great expense, energy consumption is huge, high cost and low yield energy.In addition, MOCVD is preparing nitridation
There are many technical problems such as carbon pollution, solute segregations during object, have a negative impact to the device performance of preparation.
Other devices for preparing nitride material include molecular beam epitaxy, hydride gas-phase epitaxy, magnetron sputtering etc., also
There are respective deficiencies.If molecular beam epitaxial growth rate is slow, small size nitride material can only be prepared；Hydride gas-phase epitaxy
Mainly for the preparation of body material, it is difficult to prepare complicated quantum well structure；Magnetron sputtering is difficult mainly for the preparation of aluminium nitride material
To meet the preparation of the material of the complicated components such as gallium nitride, indium gallium nitrogen.
The content of the invention
The utility model aim is to provide one kind, and low energy consumption, quality of materials is high, carbon pollution is low, big without solute segregation, production capacity
The device for being used to prepare nitride material.
What the purpose of this utility model was realized in：
A kind of device for being used to prepare nitride material, including control system, is characterized in：Further include cavity, gas ionization
Device, metal source generating device, vacuum system, sample stage, cavity heating unit, vacuum meter, thermometer and film thickness gauge, wherein：
Cavity is made of the upper cavity that is separated from each other and can be integrated with lower chamber, and the lower chamber of upward opening is fixed not
It is dynamic, the transmission device fixed link of " L " shape is equipped on the top right side wall of lower chamber, the firm banking of transmission device is sleeved on transmission
On the montant of device fixed link, the outer end of the rotating arm of transmission device is fixed on the top right side wall of upper cavity, transmission device
Under the instruction of control system, enable hemispherical and downwardly open upper cavity make vertically in the top of lower chamber on move down
It moves or rotates horizontally vertically, upper cavity is enable to close up and separate with lower chamber, realize air chamber and the external world of cavity
Connection and partition, upper cavity are sealed cavity by sealing ring when closing up with lower chamber；
Several gas ionization devices placed vertically are located at the bottom of lower chamber, and the air inlet of gas ionization device bottom is located at
The outside of cavity is for accessing extraneous gas, and the middle and upper part of gas ionization device is located in the air chamber of cavity, in gas ionization device
Middle part outer wall be cased with high-frequency inductor, for ionization of gas acquisition prepare nitride nitrogen-atoms source and n-type dopant come
Source, height and the gas outlet in direction can be adjusted by being equipped on the top of gas ionization device, for the plasma after ionization to be sent
Enter in air chamber；
Several metal source generating devices are located at the bottom of lower chamber, in air chamber, metal source generating device include crucible,
Coil and metal protector, metal protector are made of stool and blocking cover, and the stool of upward opening is fixed
In the bottom surface of lower chamber, it is equipped with to hold the crucible of source metal in stool, coil is tied with around the outer wall of crucible,
Coil heating crucible and can control the temperature of crucible in the range of 0--1200 DEG C, and the gaseous state gold of nitride is prepared for acquisition
Category source, is stamped the blocking cover for separating source metal and air chamber above crucible, and the upper end of the gas tube with charge valve is set
In the bottom of stool, the lower end of gas tube is passed down through the bottom surface of lower chamber and is exposed to outside cavity, can lead in gas tube
Enter inert gas, when metal protector is in communication with the outside the source metal in crucible is prevented to be aoxidized；
Vacuum system includes three groups of dry pump, molecular pump and cryogenic pump pumps, for the input terminal of the dry pump of low vacuum lower pumping
It is located in the middle part of sliding channel of lower chamber, for the output terminal of the input termination dry pump of the molecular pump of high vacuum lower pumping；Cryogenic pump
The top of upper cavity is located at, for being evacuated in materials process is prepared；
In upper cavity, the top of air chamber be equipped with sample stage, sample stage include slide rack, substrate cooling device and sample
Platform rotating device, the groove for the hollow out being equipped in slide rack cover to hold substrate from top to bottom in the top of slide rack
There is substrate cooling device, filled with coolant in the close passage in substrate cooling device, by the flowing for controlling coolant
Speed can control the temperature of substrate surface, and the sample stage rotating device containing magnetic coupling rotor is located at the center top of slide rack,
Magnetic coupling rotor is rotated by gear band dynamic load horse；
Cavity heating unit is equipped in middle upper part, air chamber in the bottom plate of lower chamber, gas is heated using radiant heat method
Body cavity；
In the middle part of the side wall of lower chamber, it is equipped with vacuum meter, thermometer and film thickness gauge, vacuum in air chamber successively from top to bottom
Vacuum ionization ga(u)ge is calculated as, for measuring the internal pressure of air chamber；Temperature is calculated as platinum resistance thermometer, for measuring air chamber
Internal temperature；Film thickness gauge is used to measure the film thickness in nitride preparation process for quartz crystal；
Transmission device, gas ionization device, vacuum pump system, substrate cooling device, cavity heating unit, vacuum meter, temperature
Meter, film thickness gauge are connected respectively by conducting wire with control system.
The quantity of gas ionization device is 2-4, and the quantity of metal source generating device is 4-6.
Several gas ionization devices and the wrong setting of several metal source generating devices submission.
The shape of hollow out groove among slide rack in sample stage is similar to the shape of standard substrate, and among slide rack
Hollow out groove the size for being dimensioned slightly smaller than standard substrate.
Slide rack can be removed to pick and place substrate.
When the specification of substrate is different from standard substrate and the size less than standard substrate, spare load is equipped in slide rack
Plate rack, the size of spare slide mount is identical with standard substrate size, spare slide mount by hollow out into smaller groove with
Place the non-standard substrate of substrate under gauge.
The blocking cover of metal protector, which is installed in, can move up and down and on the electronic supporting rod of left rotation and right rotation, control
Under the instruction of system, blocking cover can be opened when electronic supporting rod moves up, and rotating makes blocking cover leave the overhead of crucible, makes
Gaseous metal source enters in air chamber in crucible；Electronic supporting rod rotation makes blocking cover face crucible, is closed when moving still further below,
Blocking cover makes gaseous source metal in crucible completely cut off with air chamber.
The blocking cover of metal protector is closed automatically when air chamber is in communication with the outside, while charge valve automatically opens simultaneously
Protective gas is passed through, protects the source metal in crucible not oxidized.
Transmission device fixed link is hydraulic stem or atmospheric pressure pole；Sealing ring is metal o-ring or rubber sealing circle.
Cavity heating unit is halogen lamp or quartz infrared cooker radial burner；The material of crucible is graphite or tungsten or molybdenum.
Flowmeter is connected at the air inlet of gas ionization device bottom to adjust the gas stream by gas ionization device
Amount.
The utility model obtains gallium, aluminium, indium, magnesium using metals such as gallium, aluminium, indium, magnesium as source metal by way of evaporation
Waiting gaseous metals atom, ionization ammonia or nitrogen obtain nitrogen by the way of high-frequency induction as the cation source in nitride
Ion is as the source of anions in nitride, at a lower temperature（Such as 0-200 DEG C）It is chemically reacted and is deposited on lining
The surface at bottom obtains nitride material.The utility model is by controlling opening and closing, the flow of various source metals and ionization of gas, system
Standby complicated nitride multilayer object structure, such as light emitting diode, Schottky diode, high-velocity electrons migration transistor, solar-electricity
The devices such as pond.
The operating temperature of the utility model（Such as 0-200 DEG C）Far below the work with traditional nitride preparation facilities MOCVD
Make temperature（Such as 700-1100 DEG C）, the energy consumption in the course of work is greatly reduced；And at low temperature, the chemistry of indium gallium nitrogen material
Reaction avoids the generation of indium solute segregation in nonequilibrium condition；It is not contained in Metal Source materials used in the utility model
Carbon, therefore there is no carbon pollution problems；The utility model prepares the mode of nitride and is successively accumulated for anion cation
There is pattern preferable quality of materials and faster nitride to prepare rate.Therefore, the utility model is with low energy consumption, material
Quality is high, carbon pollution is low, without solute segregation and production capacity it is big many advantages, such as.
Description of the drawings
Fig. 1 is the apparatus structure schematic diagram that the utility model is used to prepare nitride material；
Wherein：1-cavity, 11-upper cavity, 12-lower chamber, 13-transmission device, 2-gas ionization device, 21-into
Gas port, 22-high-frequency inductor, 23-gas outlet, 3-metal source generating device, 31-crucible, 32-coil, 33-metal is protected
Protection unit, 331-blocking cover, 332-charge valve, 41-dry pump, 42-molecular pump, 43-cryogenic pump, 51-slide rack, 52-
Substrate cooling device, 53-sample stage rotating device, 6-heating unit, 7-vacuum meter, 8-thermometer, 9-film thickness gauge；
Fig. 2 slide racks and spare slide mount schematic top plan view.
Specific embodiment
The utility model is described in detail with reference to the accompanying drawings and examples.
A kind of device for being used to prepare nitride material, including cavity 1, gas ionization device 2, metal source generating device 3, true
Empty set system 4, sample stage 5, cavity heating unit 6, vacuum meter 7, thermometer 8, film thickness gauge 9 and control system, wherein：
Cavity 1 is made of the upper cavity 11 that is separated from each other and can be integrated with lower chamber 12, the lower chamber of upward opening
12 is fixed, and the transmission device fixed link 14 of " L " shape is equipped on the top right side wall of lower chamber 12, and transmission device 13 is consolidated
Base sheath is determined on the montant of transmission device fixed link 14, and the outer end of the rotating arm of transmission device 13 is fixed on the top of upper cavity 11
It holds on right side wall, under the drive of transmission device 13, makes semicircle and downwardly open upper cavity 11 in the top of lower chamber 12
It can move up and down or rotate horizontally vertically vertically, upper cavity 11 is enable to close up and separate with lower chamber 12, it is real
The air chamber 16 of existing cavity 1 and extraneous connection and partition, upper cavity 11 are right by sealing ring 15 when closing up with lower chamber 12
Cavity 1 is sealed；Transmission device fixed link 14 is hydraulic stem；
The 3 gas ionization devices 2 placed vertically are uniformly located at the bottom of lower chamber 12, the air inlet of 2 bottom of gas ionization device
Mouth 21 is located at the outsides of cavity 1 for accessing extraneous gas, and flowmeter is connected at the air inlet 21 of 2 bottom of gas ionization device
To adjust the gas flow by gas ionization device 2, the middle and upper part of gas ionization device 2 is located in the air chamber 16 of cavity 1,
The middle part outer wall of gas ionization device 2 is cased with high-frequency inductor 22, and the nitrogen-atoms source of nitride is prepared for ionization of gas acquisition
With n-type dopant source, the gas outlet 23 that can adjust height and direction is equipped on the top of gas ionization device 2, for will be from
Plasma after change is sent into air chamber 16；
4 metal source generating devices 3 are uniformly located at the bottom of lower chamber 12, in air chamber 16, and metal source generating device 3 wraps
Crucible 31, coil 32 and metal protector 33 are included, metal protector 33 is made of stool 333 and blocking cover 331, to
The stool 333 of upper opening is fixed on 12 bottom surface of lower chamber, is equipped with to hold the crucible of source metal in stool 333
31,31 materials of crucible are graphite, are tied with coil 32 around the outer wall of crucible 31, and coil 32 can heating crucible 31 and by crucible
31 temperature is controlled in the range of 0--1200 DEG C, and the gaseous metal source of nitride is prepared for acquisition, is covered above crucible 31
The blocking cover 331 of partition source metal and air chamber 16 is useful for, the upper end of the gas tube 334 with charge valve 332 is located at crucible bottom
The bottom of seat 333, the lower end of gas tube 334 is passed down through the bottom plate 121 of lower chamber 12 and is exposed to outside cavity 1, gas tube 334
In can be passed through inert gas, when metal protector 33 is in communication with the outside prevent crucible 31 in source metal aoxidized；
Vacuum system 4 includes 43 3 groups of dry pump 41, molecular pump 42 and cryogenic pump pumps, for the dry pump 41 of low vacuum lower pumping
Input terminal be located on the middle part right side wall of lower chamber 12, to connect air chamber 16, for the molecular pump 42 of high vacuum lower pumping
Input termination dry pump 41 output terminal；Cryogenic pump 43 is located at the top of upper cavity 11, for being evacuated in materials process is prepared；
In upper cavity, the top of air chamber 16 be equipped with sample stage 5, sample stage 5 include slide rack 51, substrate cooling device
52 and sample stage rotating device 53, the hollow-out part among slide rack 51 to hold substrate from top to bottom, in slide rack 51
Top covered with bottom cooling device 52, it is cold by controlling filled with coolant in the close passage in bottom cooling device 52
But the flowing velocity of liquid can control the temperature of substrate surface, and the sample stage rotating device 53 containing magnetic coupling rotor 531 is located at load
The central bottom of horse 51, magnetic coupling rotor drive slide rack 51 to rotate by gear 532；
Cavity heating unit 6 is equipped in middle upper part, air chamber 16 in the bottom plate of lower chamber 12, using radiant heat method plus
Hot gas body cavity 16, cavity heating unit 6 are quartz infrared cooker radial burner；
It is equipped with vacuum meter 7, thermometer 8 and film successively from top to bottom in the left side wall top of lower chamber 12, air chamber 16
Thick instrument 9, vacuum meter 7 is vacuum ionization ga(u)ge, for measuring the internal pressure of air chamber 16；Thermometer 8 is platinum resistance thermometer,
For measuring the internal temperature of air chamber 16；Film thickness gauge 9 is used to measure the film thickness in nitride preparation process for quartz crystal；
Transmission device 13, gas ionization device 2, vacuum pump system 4, substrate cooling device 52, cavity heating unit 6, vacuum
Meter 7, thermometer 8, film thickness gauge 9 are connected respectively by conducting wire with control system.
The blocking cover 331 of metal protector 33 is installed in and can move up and down and the electronic supporting rod 34 of left rotation and right rotation
On, electronic supporting rod 34 can open blocking cover 331 when moving up, and rotating makes blocking cover 331 leave the overhead of crucible 31, makes
Gaseous metal source enters in air chamber 16 in crucible 31；The electronic rotation of supporting rod 34 makes 331 face crucible 31 of blocking cover, still further below
It is closed when mobile, blocking cover 331 makes gaseous source metal in crucible 31 completely cut off with air chamber 16.
The blocking cover 331 of metal protector 33 is closed automatically when air chamber 16 is in communication with the outside, while charge valve 332
It automatically opens and is passed through protective gas, protect the source metal in crucible 31 not oxidized.
2 gas ionization devices 2 and 4 metal source generating devices 3 are set in being staggered between each two gas ionization device 2
There are 2 metal source generating devices 3.
The shape of the hollow out groove 511 among slide rack 51 in sample stage 5 is similar to the shape of standard substrate, and slide glass
The size for being dimensioned slightly smaller than standard substrate of hollow out groove 511 among frame 51.
When the specification of substrate is different from standard substrate and the size less than standard substrate, it is equipped in slide rack 51 spare
Slide mount 512, the size of spare slide mount 512 is identical with standard substrate size, spare slide mount 512 by hollow out into compared with
Small groove 513 is to place the non-standard substrate of substrate under gauge.
Slide rack 51 is removed to pick and place substrate.
Claims (10)
1. a kind of device for being used to prepare nitride material, including control system, it is characterised in that：Further include cavity, gas from
Change device, metal source generating device, vacuum system, sample stage, cavity heating unit, vacuum meter, thermometer and film thickness gauge, wherein：
Cavity is made of the upper cavity that is separated from each other and can be integrated with lower chamber, and the lower chamber of upward opening is fixed,
The transmission device fixed link of " L " shape is equipped on the top right side wall of lower chamber, the firm banking of transmission device is sleeved on transmission dress
It puts on the montant of fixed link, the outer end of the rotating arm of transmission device is fixed on the top right side wall of upper cavity, in transmission device
Drive under, enable hemispherical and downwardly open upper cavity move up and down or vertically vertically in the top of lower chamber
It rotates horizontally, upper cavity is enable to close up and separate with lower chamber, realize the air chamber of cavity and extraneous connection and partition,
Upper cavity is sealed cavity by sealing ring when closing up with lower chamber；
Several gas ionization devices placed vertically are located at the bottom of lower chamber, and the air inlet of gas ionization device bottom is located at cavity
Outside for accessing extraneous gas, the middle and upper part of gas ionization device is located in the air chamber of cavity, in gas ionization device
Portion's outer wall is cased with high-frequency inductor, and the nitrogen-atoms source of nitride and n-type dopant source are prepared for ionization of gas acquisition,
The top of gas ionization device, which is equipped with, can adjust height and the gas outlet in direction, for the plasma after ionization to be sent into gas
Intracavitary；
Several metal source generating devices are located at the bottom of lower chamber, in air chamber, and metal source generating device includes crucible, coil
And metal protector, metal protector are made of stool and blocking cover, the stool of upward opening is fixed on down
The bottom surface of cavity is equipped with to hold the crucible of source metal in stool, coil, coil is tied with around the outer wall of crucible
Heating crucible simultaneously controls the temperature of crucible in the range of 0--1200 DEG C, and the gaseous metal source of nitride is prepared for acquisition,
Crucible the upper surface of is stamped the blocking cover for separating source metal and air chamber, and the upper end of the gas tube with charge valve is located at crucible bottom
The bottom of seat, the lower end of gas tube are passed down through the bottom surface of lower chamber and are exposed to outside cavity, and inert gas is passed through in gas tube,
When metal protector is in communication with the outside the source metal in crucible is prevented to be aoxidized；
Vacuum system includes three groups of dry pump, molecular pump and cryogenic pump pumps, and the input terminal for the dry pump of low vacuum lower pumping is located at
In the middle part of sliding channel of lower chamber, for the output terminal of the input termination dry pump of the molecular pump of high vacuum lower pumping；Cryogenic pump is located at
The top of upper cavity, for being evacuated in materials process is prepared；
In upper cavity, the top of air chamber be equipped with sample stage, sample stage include slide rack, substrate cooling device and sample stage rotation
Rotary device, the groove for the hollow out being equipped in slide rack to hold substrate from top to bottom, in the top of slide rack covered with lining
Bottom cooling device, filled with coolant in the close passage in substrate cooling device, by the flowing velocity for controlling coolant
The temperature of substrate surface can be controlled, the sample stage rotating device containing magnetic coupling rotor is located at the center top of slide rack, magnetic coupling
Rotor is closed to rotate by gear band dynamic load horse；
Cavity heating unit is equipped in middle upper part, air chamber in the bottom plate of lower chamber, uses radiant heat method heat gas chamber；
In the middle part of the side wall of lower chamber, it is equipped with vacuum meter, thermometer and film thickness gauge in air chamber successively from top to bottom, vacuum is calculated as
Vacuum ionization ga(u)ge, for measuring the internal pressure of air chamber；Temperature is calculated as platinum resistance thermometer, for measuring in air chamber
Portion's temperature；Film thickness gauge is used to measure the film thickness in nitride preparation process for quartz crystal；
Transmission device, gas ionization device, vacuum pump system, substrate cooling device, cavity heating unit, vacuum meter, thermometer, film
Thick instrument is connected respectively by conducting wire with control system.
2. the device according to claim 1 for being used to prepare nitride material, it is characterised in that：The quantity of gas ionization device
For 2-4, the quantity of metal source generating device is 4-6.
3. the device according to claim 2 for being used to prepare nitride material, it is characterised in that：Several gas ionization devices
Wrong set is submitted with several metal source generating devices.
4. the device according to claim 1 for being used to prepare nitride material, it is characterised in that：Slide rack in sample stage
The shape of intermediate hollow out groove is similar to the shape of standard substrate, and the hollow out groove among slide rack is dimensioned slightly smaller than mark
The size of quasi- substrate.
5. the device for being used to prepare nitride material according to claim 1 or 4, it is characterised in that：Slide rack can be split
It unloads down to pick and place substrate.
6. the device according to claim 1 for being used to prepare nitride material, it is characterised in that：When the specification of substrate is different
When standard substrate and the size less than standard substrate, spare slide mount, the ruler of spare slide mount are equipped in slide rack
Very little identical with standard substrate size, spare slide mount is by hollow out into smaller groove to place the non-of substrate under gauge
Standard substrate.
7. the device according to claim 1 for being used to prepare nitride material, it is characterised in that：The resistance of metal protector
Door, which is installed in, can move up and down and on the electronic supporting rod of left rotation and right rotation.
8. the device according to claim 1 for being used to prepare nitride material, it is characterised in that：Transmission device fixed link is
Hydraulic stem or atmospheric pressure pole；Sealing ring is metal o-ring or rubber sealing circle.
9. the device according to claim 1 for being used to prepare nitride material, it is characterised in that：Cavity heating unit is halogen
Plain lamp or quartz infrared cooker radial burner；The material of crucible is graphite or tungsten or molybdenum.
10. the device according to claim 1 for being used to prepare nitride material, it is characterised in that：At gas ionization device bottom
Flowmeter is connected at the air inlet at end to adjust the gas flow by gas ionization device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721384024.7U CN207405234U (en) | 2017-10-25 | 2017-10-25 | A kind of device for being used to prepare nitride material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721384024.7U CN207405234U (en) | 2017-10-25 | 2017-10-25 | A kind of device for being used to prepare nitride material |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107675141A (en) * | 2017-10-25 | 2018-02-09 | 南昌大学 | A kind of device for being used to prepare nitride material |
| CN110983286A (en) * | 2019-12-30 | 2020-04-10 | 江阴慕达斯真空设备有限公司 | Cooling cover for coated product |
| TWI726715B (en) * | 2020-05-08 | 2021-05-01 | 台灣積體電路製造股份有限公司 | Method for manufacturing semiconductor wafer and semiconductor manufacturing apparatus |
| CN113628988A (en) * | 2020-05-08 | 2021-11-09 | 台湾积体电路制造股份有限公司 | Method for manufacturing semiconductor wafer and semiconductor manufacturing equipment |
-
2017
- 2017-10-25 CN CN201721384024.7U patent/CN207405234U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107675141A (en) * | 2017-10-25 | 2018-02-09 | 南昌大学 | A kind of device for being used to prepare nitride material |
| CN107675141B (en) * | 2017-10-25 | 2023-08-04 | 南昌大学 | Device for preparing nitride material |
| CN110983286A (en) * | 2019-12-30 | 2020-04-10 | 江阴慕达斯真空设备有限公司 | Cooling cover for coated product |
| TWI726715B (en) * | 2020-05-08 | 2021-05-01 | 台灣積體電路製造股份有限公司 | Method for manufacturing semiconductor wafer and semiconductor manufacturing apparatus |
| CN113628988A (en) * | 2020-05-08 | 2021-11-09 | 台湾积体电路制造股份有限公司 | Method for manufacturing semiconductor wafer and semiconductor manufacturing equipment |
| CN113628988B (en) * | 2020-05-08 | 2024-08-09 | 台湾积体电路制造股份有限公司 | Method and apparatus for manufacturing semiconductor wafer |
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Address after: 999 No. 330031 Jiangxi province Nanchang Honggutan University Avenue Co-patentee after: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Patentee after: Nanchang University Address before: 330047 No. 235 East Nanjing Road, Jiangxi, Nanchang Co-patentee before: NANCHANG HUANGLYU LIGHTING Co.,Ltd. Patentee before: Nanchang University |
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