CN207300457U - A kind of silicon piezoresistive pressure sensor - Google Patents
A kind of silicon piezoresistive pressure sensor Download PDFInfo
- Publication number
- CN207300457U CN207300457U CN201721156571.XU CN201721156571U CN207300457U CN 207300457 U CN207300457 U CN 207300457U CN 201721156571 U CN201721156571 U CN 201721156571U CN 207300457 U CN207300457 U CN 207300457U
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- China
- Prior art keywords
- pressure
- silicon
- shielded cable
- resolving
- circuit
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The utility model provides a kind of silicon piezoresistive pressure sensor, including pressure-sensitive component and resolving circuit block, the pressure-sensitive component and the resolving circuit component are electrically connected by shielded cable, and the length of the shielded cable is more than or equal to 500mm.The utility model separates pressure-sensitive component with circuit block is resolved, pass through the electrical connection of shielded cable progress therebetween, the presser sensor component of impression pressure medium and the resolving circuit of the output signal of processing pressure sensing unit are separated, solves the problems, such as that sensor can not work normally under the environmental condition higher than 150 DEG C.
Description
Technical field
Sensor field is the utility model is related to, more particularly, to a kind of silicon piezoresistive pressure sensor.
Background technology
Pressure sensor (Pressure Transducer) is to experience pressure signal, and can be incited somebody to action according to certain rule
Pressure signal is converted into the device or device of the electric signal of available output.Pressure sensor is usually by pressure-sensing device and letter
Number processing unit composition.Pressure sensor is a kind of sensor the most commonly used in industrial practice, it is widely used in various works
Industry automatic control environment, is related to water conservancy and hydropower, railway traffic, intelligent building, production automatic control, aerospace, military project, petrochemical industry, oil well, electricity
Numerous industries such as power, ship, lathe, pipeline.
Wherein, silicon piezoresistive pressure sensor is that the silicon piezoresistance type pressure-sensing device with isolation is packaged in Stainless Steel Shell
Inside it is made.The electric signal that the liquid experienced or gas pressure can be converted into standard by it externally exports, DATA-52 series
Diffused silicon pressure transmitter is widely used in for/the industrial process-field such as draining, heating power, oil, chemical industry, metallurgy measurement and control
System.
Current silicon piezoresistive pressure sensor is integrated design, as shown in Figure 1, the presser sensor component of front end can (-
55~200) worked normally at DEG C, can be due to be limited by the component operating ambient temperature of back-end circuit component, sensor
Highest operating ambient temperature can only achieve 150 DEG C, can not work again in the environment of higher temperature.
Utility model content
The utility model provides one kind and overcomes the above problem or solve above-mentioned silicon piezoresistive pressure sensor at least in part.
One side according to the present utility model, there is provided a kind of silicon piezoresistive pressure sensor, including pressure-sensitive component and
Resolving circuit component, the pressure-sensitive component and the resolving circuit component are electrically connected by shielded cable, the screen
The length for covering cable is more than or equal to 500mm.
Further, the pressure-sensitive component includes pressure inlet and the first shell, and the pressure inlet is connected outside described first
Shell, first shell obtain destination media to be measured by the pressure inlet；
Change-over panel and silicon piezoresistance type pressure chip are provided with first shell, the silicon piezoresistance type pressure chip is electrically connected
Connect on the change-over panel, the change-over panel is electrically connected the shielded cable.
Further, the silicon piezoresistance type pressure chip is in series with the first diode.
Further, the resolving circuit component includes resolving circuit plate and second housing, and the resolving circuit plate is arranged at
In the second housing, the shielded cable is electrically connected；
The resolving circuit plate is provided with resistance, and the resistance and the silicon piezoresistance type pressure chip are in parallel on circuit.
Further, the resolving circuit component further includes amplification compensation circuit, and one end of the amplification compensation circuit passes through
The shielded cable is electrically connected the change-over panel, and the other end exports signal by cable；The amplification compensation circuit is connected with
First diode.
The utility model proposes a kind of silicon piezoresistive pressure sensor, and pressure-sensitive component is separated with circuit block is resolved,
Therebetween electrical connection is carried out by shielded cable, makes presser sensor component and the processing pressure sensitivity portion of impression pressure medium
The resolving circuit of the output signal of part separates, and solving sensor can not work normally under the environmental condition higher than 150 DEG C
The problem of.
Brief description of the drawings
Fig. 1 is prior art silicon piezoresistive pressure sensor pressure-sensitive component appearance schematic diagram；
Fig. 2 is a kind of silicon piezoresistive pressure sensor schematic diagram of the utility model embodiment.
Embodiment
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.Below
Embodiment is used to illustrate the utility model, but is not intended to limit the scope of the present invention.
Fig. 2 is a kind of silicon piezoresistive pressure sensor schematic diagram of the utility model embodiment, as shown in Fig. 2, the utility model
Embodiment provides a kind of silicon piezoresistive pressure sensor, including pressure-sensitive component 1 and resolving circuit block 2, the presser sensor
Component 1 and the resolving circuit component 2 are electrically connected by shielded cable 3, and the length of the shielded cable 3 is more than or equal to
500mm。
The pressure-sensitive component 1 is used for the pressure for sensing destination media to be measured, and pressure signal is converted to electric signal；
The resolving circuit component 2 is used for the electric signal for receiving the pressure-sensitive component output, and temperature is carried out by amplifying compensation circuit
Degree compensation and amplification, obtain the voltage signal directly proportional to the pressure that the pressure-sensitive component is sensed, and by the telecommunications
Number output；Specifically, output voltage signal scope is 0~5 volt.
The utility model embodiment separates pressure-sensitive component with circuit block is resolved, the two is carried out by shielded cable
Between electrical connection, make the resolving electricity of the presser sensor component of impression pressure medium and the output signal of processing pressure sensing unit
Road separates, and solves the problems, such as that sensor can not work normally under the environmental condition higher than 150 DEG C.
In an optional embodiment, the pressure-sensitive component 1 includes pressure inlet and the first shell, the pressure inlet
First shell is connected, first shell is the closure with certain accommodation space, and has shielding action, described
One shell obtains destination media to be measured by the pressure inlet；
Change-over panel and silicon piezoresistance type pressure chip are provided with first shell, the silicon piezoresistance type pressure chip is electrically connected
Connect on the change-over panel, the change-over panel is electrically connected the shielded cable.
In the utility model embodiment, destination media to be measured reaches silicon piezoresistance type pressure chip, silicon pressure drag by pressure inlet
The pressure that formula pressure chip senses the destination media to be measured obtains pressure signal, is changed the pressure signal by change-over panel
For voltage signal, and exported by shielded cable to resolving circuit component.
In an optional embodiment, the silicon piezoresistance type pressure chip is in series with the first diode.Described 1st
Level pipe is arranged on the change-over panel.
In an optional embodiment, the resolving circuit component 2 includes resolving circuit plate and second housing, and described
Two shells are the closure with certain accommodation space, and have shielding action；The resolving circuit plate is arranged at described second
In shell, the shielded cable is electrically connected；
The resolving circuit plate is provided with resistance, and the resistance and the silicon piezoresistance type pressure chip are in parallel on circuit.
The utility model embodiment, in structure, the main body of integral type silicon piezoresistive pressure sensor is divided into two, pressure
Connected between sensing assembly and resolving box by shielded cable, shielded cable length is not less than 500mm.On circuit, in pressure
Diode is set on the change-over panel inside sensing unit, and the diode is connected with silicon piezoresistance type pressure chip；Resolving electricity
Resistance is set on the resolving circuit plate of circuit unit, and the resistance on resolving circuit plate is in parallel with silicon piezoresistance type pressure chip, passes through this
The circuit design of sample carries out first time compensation to the voltage output of pressure-sensitive component.Further included on the resolving circuit component 2
Output cable hole 4.
In an optional embodiment, the resolving circuit component further includes amplification compensation circuit, the amplification compensation
Circuit is arranged in the second housing, and one end is electrically connected the change-over panel by the shielded cable, and the other end passes through cable
Line exports signal；And the amplification compensation circuit is connected with the first diode.
The utility model embodiment, different from integral type silicon piezoresistive pressure sensor used by internal temperature-sensitive signal tune
Manage chip, the sensor use signal condition chip can by external diode collecting temperature signal, in this way, even at
The voltage signal that resolving circuit plate under room temperature according to this can also export the pressure-sensitive component to work under the conditions of non-room temperature carries out
Temperature-compensating and amplification.
Designed based on more than, the utility model embodiment is by the presser sensor of traditional integral type silicon piezoresistive pressure sensor
Component separate with circuit block is resolved, and by shielded cable progress electrical connection therebetween, makes the pressure of impression pressure medium
The resolving circuit of sensing assembly and the output signal of processing pressure sensing unit separates, solve sensor can not higher than
The problem of being worked normally under 150 DEG C of environmental condition, and the output area of resolving circuit component is also between 0~5V, room temperature essence
Degree has good beneficial effect up to 0.5%F.S., high/low temperature precision up to 1.33%F.S.
Finally, the method for the utility model is only preferable embodiment, is not intended to limit the protection of the utility model
Scope.Where within the spirit and principles of the present invention, any modification, equivalent replacement, improvement and so on, should be included in
Within the scope of protection of the utility model.
Claims (5)
1. a kind of silicon piezoresistive pressure sensor, it is characterised in that including pressure-sensitive component and resolve circuit block, the pressure
Sensing unit and the resolving circuit component are electrically connected by shielded cable, and the length of the shielded cable is more than or equal to
500mm。
2. silicon piezoresistive pressure sensor as claimed in claim 1, it is characterised in that the pressure-sensitive component includes pressure inlet
With the first shell, the pressure inlet connects first shell, and first shell obtains target to be measured by the pressure inlet
Medium；
Change-over panel and silicon piezoresistance type pressure chip are provided with first shell, the silicon piezoresistance type pressure chip is electrically connected institute
State on change-over panel, the change-over panel is electrically connected the shielded cable.
3. silicon piezoresistive pressure sensor as claimed in claim 2, it is characterised in that the silicon piezoresistance type pressure chip is in series with
First diode.
4. silicon piezoresistive pressure sensor as claimed in claim 3, it is characterised in that the resolving circuit component includes resolving electricity
Road plate and second housing, the resolving circuit plate are arranged in the second housing, are electrically connected the shielded cable；
The resolving circuit plate is provided with resistance, and the resistance and the silicon piezoresistance type pressure chip are in parallel on circuit.
5. silicon piezoresistive pressure sensor as claimed in claim 4, it is characterised in that the resolving circuit component further includes amplification
Compensation circuit, one end of the amplification compensation circuit are electrically connected the change-over panel by the shielded cable, and the other end passes through electricity
Cable exports signal；The amplification compensation circuit is connected with the first diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721156571.XU CN207300457U (en) | 2017-09-11 | 2017-09-11 | A kind of silicon piezoresistive pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721156571.XU CN207300457U (en) | 2017-09-11 | 2017-09-11 | A kind of silicon piezoresistive pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207300457U true CN207300457U (en) | 2018-05-01 |
Family
ID=62446781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721156571.XU Expired - Fee Related CN207300457U (en) | 2017-09-11 | 2017-09-11 | A kind of silicon piezoresistive pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207300457U (en) |
-
2017
- 2017-09-11 CN CN201721156571.XU patent/CN207300457U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180501 Termination date: 20200911 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |