CN207250513U - Four tunnel negative pressure drive ignition circuits - Google Patents
Four tunnel negative pressure drive ignition circuits Download PDFInfo
- Publication number
- CN207250513U CN207250513U CN201721388988.9U CN201721388988U CN207250513U CN 207250513 U CN207250513 U CN 207250513U CN 201721388988 U CN201721388988 U CN 201721388988U CN 207250513 U CN207250513 U CN 207250513U
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- Prior art keywords
- resistance
- aluminum oxide
- terminal
- component
- oxide ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005669 field effect Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 17
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000011084 recovery Methods 0.000 claims abstract description 11
- 229910002796 Si–Al Inorganic materials 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims abstract description 3
- 238000005245 sintering Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 abstract description 3
- 230000036039 immunity Effects 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Amplifiers (AREA)
Abstract
A kind of four tunnel negative pressure drive ignition circuits, can meet the requirement of equipment miniaturization, and the performance and reliability for further improving product is horizontal.Including shell, outer lead is equipped with shell, it is characterized in that：Aluminum oxide ceramic substrate is fixedly mounted with by sintering processing on shell, fast recovery diode chip and field effect transistor chip are bonded on aluminum oxide ceramic substrate, thick-film resistor and pad are set on aluminum oxide ceramic substrate, operational amplifier, photoelectrical coupler are bonded on aluminum oxide ceramic substrate, passes through Si-Al wire between each component, between component and pad, between the pad and outer lead of component, between component and outer lead and realizes and be electrically connected；Control signal importation is isolated with rear class power output part by photoelectrical coupler, strong interference immunity；Internal output terminal is connected to negative supply fast recovery fly-wheel diode, and can suppress the high current reverse impulse after inductive load power-off influences.
Description
Technical field
A kind of hydrid integrated circuit is the utility model is related to, it is main more particularly, to a kind of four tunnel negative pressure drive ignition circuits
It is used for the equipment such as trajectory adjustment and plays the role of switch, the unlatching for Map and image database adjusting device.
Background technology
Existing trajectory adjusting device firing circuit be mostly discrete device connection mode structure, this structure occupied space
Larger, assembling and installation and debugging process are more complicated, and power tube is most to use more bulky F2 types conventional package.Using point
The comparison of coherence for the circuit product that vertical device is built is poor.At present, with the rapid development of military electronic, complete machine unit is to weapon
The demand of equipment miniaturization is more and more urgent, and the voltage stabilizing firing circuit formed by the way of discrete device connection gradually can
Meet the requirement of circuitry.
The content of the invention
The technical problem to be solved by the present invention is to provide a kind of four tunnel negative pressure drive ignition circuits, by this circuit by
Discrete device meets the requirement of equipment miniaturization, and further improve the performance of product to the conversion of hydrid integrated circuit
With reliability level.
The four tunnel negative pressure drive ignition circuits that the utility model is related to, including shell, are equipped with outer lead on shell, it is special
It is in place of different：The heat-radiating substrate of the shell is steel material, and aluminum oxide ceramic base is fixedly mounted with by sintering processing on shell
Plate, using silver paste bonding fast recovery diode chip and field effect transistor chip on aluminum oxide ceramic substrate, three
Thick-film resistor and pad are set on Al 2 O ceramic substrate, operational amplifier, light are bonded on aluminum oxide ceramic substrate
Electric coupler, between each component, between component and pad, between the pad and outer lead of component, component is with drawing outside
Realized and be electrically connected by Si-Al wire between line；
Circuit part include control signal importation, rear class power output part, the thick-film resistor by resistance R1~
R6 is formed, and control signal input unit is grouped into：Resistance R1 and R2 are connected on control power Vcc and system ground terminal, operation amplifier
Device anti-phase input terminates at the node of resistance R1 and R2, in-phase input end is connected simultaneously with for inputting the input terminal VIN of Transistor-Transistor Logic level
It is grounded by resistance R3, operational amplifier output terminal connection resistance R4；Rear class power output part forms：The resistance R6 of series connection
Protection ground terminal PGND is met with R5, the node of resistance R5 and R6 connect the grid of field effect transistor chip, field effect transistor chip
Source electrode output terminal OUT and to meet negative supply VEE2 by fast recovery diode chip, the drain electrode of field effect transistor chip connects
System ground terminal；The output terminal of operational amplifier is connected by resistance R4 with the input positive terminal of photoelectrical coupler 9, photoelectrical coupler
Input negative terminal welding system ground terminal, grid by resistance R6 connection field effect tube chips of the output plus terminal of photoelectrical coupler, output
Negative terminal is connected with negative supply VEE1.
The beneficial effects of the utility model are：
1st, isolated between shell and field effect transistor chip using aluminum oxide ceramic substrate, this ceramic substrate
Thermal conductivity is good, and shell is steel material, has and the linear expansion coefficient that matches of aluminum oxide ceramic substrate 2, and this two
The heat dissipation performance of kind material is fabulous.
2nd, control signal importation is isolated with rear class power output part by photoelectrical coupler, anti-interference
By force；Internal output terminal is connected to negative supply fast recovery fly-wheel diode, and the high current that can suppress after inductive load power-off is reverse
Pulsing effect.
3rd, the firing circuit is integrated structure, has the characteristics that small, light-weight, and all devices is encapsulated in
In same encapsulation, it is ensured that leakproofness, the reliability of device.Work at the same time under same environment, uniformity is good, reliability
It is high.The screening of product, installation, debugging, more convenient, the quality and performance indicator of product are more superior.This product is used for
The fields such as Aeronautics and Astronautics, the requirement of reliability is stringent, can normal operation under the conditions of such as high/low temperature, strong vibration.
Brief description of the drawings
Fig. 1 is the structure diagram of the utility model；
Fig. 2 is the top view before the utility model encapsulation；
Fig. 3 is the utility model circuit single channel schematic diagram.
In figure：1- shells, 2- aluminum oxide ceramics substrate, 3- outer leads, 4- fast recovery diode chips, 5-P
Type field effect transistor chip, 6- thick-film resistors, 7- operational amplifiers, 8- photoelectrical couplers, 9- pads, 10- sial
Silk；Resistance R1-R18 is thick-film resistor.
Embodiment
As depicted in figs. 1 and 2, the utility model includes shell 1, and outer lead 3 is equipped with shell 1, is sintered on shell 1
There is aluminum oxide ceramic substrate 2, using silver paste bonding P ditches field effect transistor chip 5 on aluminum oxide ceramic substrate 2
With fast recovery diode chip 4, the wherein material of shell 1 is box hat, and this material ensure that P ditches field effect transistor chip 5
Good radiating condition.Thick-film resistor 6, pad 9 are equipped with aluminum oxide ceramic substrate 2 at the same time and using insulation glue sticking
Photoelectrical coupler 8, operational amplifier 7, thick-film resistor 6 be by silk-screen printing, laser resistor trimming fabrication techniques three aoxidize two
On aluminium ceramic substrate 2, between each component, between component and pad 9, between component pad and outer lead 3, component with
Realized and be electrically connected by Si-Al wire 10 between outer lead 3, the P ditches field effect transistor chip 5, fast recovery diode chip
4th, thick-film resistor 6, photoelectrical coupler 8 have four respectively, and the operational amplifier 7 is four road operational amplifiers, and product is using flat
Row seam weld technology carries out air-tight packaging.
As shown in figure 3, the negative pressure drive circuit is made of four oneway circuits, each oneway circuit structure is as follows：It is described
Thick-film resistor 6 is made of resistance R1~R6, and wherein resistance R1 and R2 is connected on control power Vcc and system ground terminal, operation amplifier
7 anti-phase input of device terminates at the node of resistance R1 and R2, in-phase input end is connected and passes through with Transistor-Transistor Logic level signal input part VIN
Resistance R3 is grounded, and the output terminal of operational amplifier 7 is connected by resistance R4 with the input positive terminal of photoelectrical coupler 9, photoelectric coupling
The output plus terminal of device 9 connects the grid of field effect transistor chip 5 by resistance R6, output negative terminal is connected with negative supply VEE1, field
The drain electrode of effect transistor chip 5 meets negative supply VEE2 by fast recovery diode chip 4, and resistance R6 is connected on protection ground terminal PGND
Between the grid of field effect transistor chip 5, the drain electrode of field effect transistor chip 5 is output terminal OUT, and the utility model is common
There are the input of four tunnels, the output of four tunnels.
The course of work：When trigger signal is high level, operational amplifier homophase input terminal voltage V+ is more than anti-phase input
Terminal voltage V-=VCC × R2/ (R1+R2), operational amplifier output high level, operational amplifier output level by resistance R5 and
R6 partial pressures are added between the grid source of field-effect transistor, ensure the partial pressure value between field-effect transistor grid source during resistance selection
VGS should be greater than its cut-in voltage VGS (TH), ensure the sufficiently conductive of power MOS pipe, realize that sink current exports；Work as trigger signal
For low level when, operational amplifier homophase input terminal voltage V+ is zero volt, less than anti-phase input terminal voltage V-=VCC × R2/ (R1
+ R2), operational amplifier output low level (zero potential), operational amplifier output level is added to field-effect transistor by partial pressure
Grid source between voltage be zero, field-effect tube is in cut-off state, and load current can not flow into ground, negative pressure firing circuit not work
Make.When the effect of fly-wheel diode is powered off, inductive load current still can be discharged by fly-wheel diode consumes remaining electricity
Stream.
The above are only specific embodiments of the present invention, is not intended to limit the present invention, for this area
Technical staff for, various modifications and changes may be made to the present invention.Where within the spirit and principles of the present invention,
Any modification, equivalent replacement, improvement and so on, should be included within the scope of protection of this utility model.
Claims (1)
1. a kind of four tunnel negative pressure drive ignition circuits, including shell, are equipped with outer lead on shell, it is characterized in that：Shell dissipates
Hot substrate is steel material, and aluminum oxide ceramic substrate is fixedly mounted with by sintering processing on shell, in aluminum oxide ceramic base
Using silver paste bonding fast recovery diode chip and field effect transistor chip on plate, set on aluminum oxide ceramic substrate
Thick-film resistor and pad, are bonded operational amplifier, photoelectrical coupler on aluminum oxide ceramic substrate, between each component,
Electricity is realized by Si-Al wire between component and pad, between the pad and outer lead of component, between component and outer lead
Gas connects；
Circuit part includes control signal importation, rear class power output part, and the thick-film resistor is by resistance R1~R6 groups
Into control signal input unit is grouped into：Resistance R1 and R2 are connected on control power Vcc and system ground terminal, operational amplifier are anti-
Mutually input terminates at the node of resistance R1 and R2, in-phase input end and is connected and passes through with being used for inputting the input terminal VIN of Transistor-Transistor Logic level
Resistance R3 is grounded, operational amplifier output terminal connection resistance R4；Rear class power output part forms：The resistance R6 and R5 of series connection
Protection ground terminal PGND is met, the node of resistance R5 and R6 connect the grid of field effect transistor chip, the source of field effect transistor chip
Extremely output terminal OUT and negative supply VEE2, the drain electrode welding system of field effect transistor chip are connect by fast recovery diode chip
Ground terminal；The output terminal of operational amplifier is connected by resistance R4 with the input positive terminal of photoelectrical coupler, the input of photoelectrical coupler
Negative terminal welding system ground terminal, grid, the output negative terminal of the output plus terminal of photoelectrical coupler by resistance R6 connection field effect tube chips
It is connected with negative supply VEE1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721388988.9U CN207250513U (en) | 2017-10-26 | 2017-10-26 | Four tunnel negative pressure drive ignition circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721388988.9U CN207250513U (en) | 2017-10-26 | 2017-10-26 | Four tunnel negative pressure drive ignition circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207250513U true CN207250513U (en) | 2018-04-17 |
Family
ID=61883019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721388988.9U Active CN207250513U (en) | 2017-10-26 | 2017-10-26 | Four tunnel negative pressure drive ignition circuits |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207250513U (en) |
-
2017
- 2017-10-26 CN CN201721388988.9U patent/CN207250513U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 121000 No. 58, Songshan street, Taihe District, Jinzhou City, Liaoning Province Patentee after: Jinzhou Liaojing Electronic Technology Co.,Ltd. Address before: 121000 No. five, section 10, Renmin Street, Guta District, Liaoning, Jinzhou Patentee before: JINZHOU LIAOJING ELECTRONIC TECHNOLOGY CO.,LTD. |