CN110967540B - Isolated linear detection circuit with adjustable transmission coefficient and module comprising same - Google Patents

Isolated linear detection circuit with adjustable transmission coefficient and module comprising same Download PDF

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CN110967540B
CN110967540B CN201911270898.3A CN201911270898A CN110967540B CN 110967540 B CN110967540 B CN 110967540B CN 201911270898 A CN201911270898 A CN 201911270898A CN 110967540 B CN110967540 B CN 110967540B
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resistor
operational amplifier
photoelectric
emitting diode
transmission coefficient
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CN110967540A (en
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张佳宁
欧熠
李彦良
张广涵
龚磊
胡锐兴
曾铮
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CETC 44 Research Institute
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017545—Coupling arrangements; Impedance matching circuits
    • H03K19/017572—Coupling arrangements; Impedance matching circuits using opto-electronic devices

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  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
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  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

The invention discloses an isolation linear detection circuit with adjustable transmission coefficient and a module comprising the circuit, wherein the circuit comprises a photoelectric isolation detection unit, a photoelectric negative feedback unit and a buffer output unit, wherein the photoelectric isolation detection unit adopts a photoelectric isolation structure to detect an input voltage signal Ui and generate corresponding acquisition current; the photoelectric negative feedback unit converts the collected current into collected voltage; the buffer output unit enables the collected voltage to be stably output; the module comprises an isolated linear detection circuit with an adjustable transfer coefficient. In the invention, single power supply acquisition is carried out on an input analog signal, and a power supply does not need to be configured at a sampling input end; the current sampling is implemented by using the light emitting diode, the limitation of the amplitude of the input voltage is eliminated, and the light emitting diode is a low-impedance device and has strong overshoot and surge resistance; the transmission coefficient is adjustable, and the defect that the transmission coefficient of a conventional device is fixed is overcome.

Description

Isolated linear detection circuit with adjustable transmission coefficient and module comprising same
Technical Field
The invention relates to the field of signal detection, in particular to an isolation linear detection circuit with adjustable transmission coefficient and a module comprising the circuit.
Background
In a modern electronic monitoring system, analog quantities in various forms such as power supply voltage, motor rotating speed, operating angle, flying height and the like need to be isolated and detected. In the prior art, an AD conversion circuit is generally utilized to collect detection signals to realize isolation detection; however, this method has the following problems:
1. the operational amplifier chip and the AD conversion chip both need independent power supply, which requires the sampling input end to provide power supply, and the primary side detected circuit is usually a power supply with different amplitudes, which must be used with the power conversion chip and the isolation power supply, thus bringing inconvenience.
2. Because the input amplitude of the operational amplifier chip and the input amplitude of the AD conversion chip are limited and are fragile and sensitive, a detected circuit is usually in a high-power running state, overshoot and surge are frequent, so that an isolation device is easy to damage, and the reliability is insufficient.
3. The transmission coefficient is fixed, and because the circuit design tolerance is small, the requirements of the two modes on an internal circuit are strict, and the trans-resistance cannot be changed randomly; particularly, the AD conversion device is completed by a digital signal transmission chip, the digit precision is not adjustable, the transmission coefficient is fixed, and the design flexibility is poor.
Disclosure of Invention
The invention aims to provide an isolated linear detection circuit which adopts a photoelectric isolation structure to perform passive sampling and has an adjustable sampling transmission coefficient and a module comprising the circuit.
The technical scheme of the invention is as follows:
an isolation linear detection circuit with adjustable transmission coefficient comprises a photoelectric isolation detection unit, a photoelectric negative feedback unit and a buffer output unit, wherein the photoelectric isolation detection unit adopts a photoelectric isolation structure to detect an input voltage signal Ui and generate corresponding acquisition current; the photoelectric negative feedback unit adopts an operational amplifier and a photoelectric isolation structure to form a negative feedback circuit, converts the acquired current into voltage, and divides the voltage output by the negative feedback circuit through a voltage division network to obtain the acquired voltage; the buffer output unit adopts a trans-resistance following buffer circuit to ensure that the acquired voltage is stably output.
Further, the optoelectronic isolation detection unit comprises a resistor R1, a light emitting diode D1 and a phototransistor U1, the light emitting diode D1 and the phototransistor U1 form a first optoelectronic isolation structure, the positive terminal of the light emitting diode D1 is connected with an input voltage Ui through a resistor R1, the negative terminal is connected with a front-stage power ground GND, the positive terminal of the phototransistor U1 is connected with a first power supply VDD, and the negative terminal is electrically connected with the input end of the optoelectronic negative feedback unit.
Further, the photoelectric negative feedback unit comprises a resistor R2, a resistor R3, a resistor R4, a resistor R5, a light emitting diode D2, a phototransistor U2 and an operational amplifier A _1, wherein the light emitting diode D2 and the phototransistor U2 form a second photoelectric isolation structure, the positive power supply terminal of the operational amplifier A _2 is connected with a first power supply VDD, and the negative power supply terminal is connected with a second power supply VSS; the non-inverting input end of the operational amplifier A _1 is electrically connected with the negative end of a phototransistor U1, the non-inverting input end of the operational amplifier A _1 is further connected with a post-stage power ground AGND through a resistor R3, the inverting input end of the operational amplifier A _1 is electrically connected with the negative end of the phototransistor U2, the inverting input end of the operational amplifier A _1 is further connected with the post-stage power ground AGND through a resistor R2, the output end of the operational amplifier A _1 is electrically connected with the positive end of a light emitting diode D2, the output end of the operational amplifier A _1 is further electrically connected with the first end of a resistor R4, the second end of the resistor R4 is electrically connected with the input end of the buffer output unit, and the second end of the resistor R4 is further connected with the post-stage power ground AGND through a resistor R5; the negative end of the light emitting diode D2 is electrically connected with the second end of the resistor R4, and the positive end of the phototransistor U2 is connected with the first power supply VDD.
Further, the photoelectric negative feedback unit further comprises a capacitor C3, and the output terminal of the operational amplifier a _1 is electrically connected with the inverting input terminal thereof through a capacitor C3, so as to limit the operating bandwidth of the operational amplifier a _ 1.
Further, the first power supply VDD is connected to the subsequent power ground AGND through a capacitor C1. The second power supply VSS is connected to the subsequent power ground AGND through a capacitor C2.
Further, the current transmission ratio of the first and second optoelectronic isolation structures is the same, and the resistance of the resistor R2 is the same as that of the resistor R3.
Further, the voltage drop of the led D1 is the same as that of the led D2, and the resistance of the resistor R1 is the same as that of the resistor R4.
Further, the buffer output unit comprises a resistor R6, a resistor R7 and an operational amplifier A _ 2; the positive power supply end of the operational amplifier A _2 is connected with a first power supply VDD, and the negative power supply end is connected with a second power supply VSS; the non-inverting input end of the operational amplifier A _2 is electrically connected with the photoelectric negative feedback unit through a resistor R6, and the inverting input end of the operational amplifier A _2 is electrically connected with the output end of the operational amplifier A _2 through a resistor R7.
An isolation linear detection module with an adjustable transmission coefficient comprises an isolation linear detection circuit with an adjustable transmission coefficient, the module is of a packaging structure, and a resistor R1, a resistor R4 and a resistor R5 are arranged outside the packaging structure.
The invention has the following beneficial effects:
1. single power supply collection is carried out on input analog signals, and a power supply does not need to be configured at a sampling input end;
2. the current sampling is implemented by using the light emitting diode, the limitation of the amplitude of the input voltage is eliminated, and the light emitting diode is a low-impedance device and has strong overshoot and surge resistance;
3. the transmission coefficient is adjustable, and the defect that the transmission coefficient of a conventional device is fixed is overcome.
Drawings
FIG. 1 is a block diagram of an isolated linear detection circuit with adjustable transmission coefficients;
FIG. 2 is a circuit diagram of an isolated linear detection circuit with adjustable transmission coefficient;
fig. 3 is a schematic structural diagram of an isolated linear detection module with adjustable transmission coefficient.
Detailed Description
The invention will be further explained with reference to the drawings.
In the description of the present invention, unless otherwise specified and limited, it is to be noted that the term "connected" is to be interpreted broadly, and may be, for example, a mechanical connection or an electrical connection, or a communication between two elements, or may be a direct connection or an indirect connection through an intermediate medium, and a specific meaning of the term may be understood by those skilled in the art according to specific situations.
Example 1
As shown in fig. 1, an embodiment of the isolated linear detection circuit with an adjustable transmission coefficient of the present invention includes a photoelectric isolation detection unit 1, a photoelectric negative feedback unit 2, a buffer output unit 3, a capacitor C1, and a capacitor C2, where the photoelectric isolation detection unit 1 detects an input voltage signal Ui by using a photoelectric isolation structure and generates a corresponding acquisition current; the photoelectric negative feedback unit 2 adopts an operational amplifier and a photoelectric isolation structure to form a negative feedback circuit, converts the acquired current into voltage, and divides the voltage output by the negative feedback circuit through a voltage division network to obtain the acquired voltage; and the buffer output unit 3 adopts a trans-resistance following buffer circuit to stably output the acquired voltage.
The optoelectronic isolation detection unit 1 comprises a resistor R1, a light emitting diode D1 and a phototransistor U1, the light emitting diode D1 and the phototransistor U1 form a first optoelectronic isolation structure 11, the positive end of the light emitting diode D1 is connected with an input voltage Ui through a resistor R1, the negative end is connected with a front-stage power ground GND, the positive end of the phototransistor U1 is connected with a first power supply VDD, the positive end of the phototransistor U1 is connected with a rear-stage power ground AGND through a capacitor C1, and the negative end of the phototransistor U1 is electrically connected with the input end of the optoelectronic negative feedback unit 2.
The photoelectric negative feedback unit 2 comprises a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C3, a light-emitting diode D2, a photosensitive transistor U2 and an operational amplifier A _1, wherein the light-emitting diode D2 and the photosensitive transistor U2 form a second photoelectric isolation structure 21, the positive power supply end of the operational amplifier A _2 is connected with a first power supply VDD, and the negative power supply end is connected with a second power supply VSS; the non-inverting input end of the operational amplifier a _1 is electrically connected to the negative end of the phototransistor U1, the non-inverting input end of the operational amplifier a _1 is further connected to the post-stage power ground AGND through a resistor R3, the inverting input end of the operational amplifier a _1 is electrically connected to the negative end of the phototransistor U2, the inverting input end of the operational amplifier a _1 is further connected to the post-stage power ground AGND through a resistor R2, the output end of the operational amplifier a _1 is electrically connected to the positive end of the light emitting diode D2, the output end of the operational amplifier a _1 is electrically connected to the inverting input end thereof through a capacitor C3, the output end of the operational amplifier a _1 is further electrically connected to the first end of a resistor R4, the second end of the resistor R4 is electrically connected to the input end of the buffer output unit 3, and the second end of the resistor R4 is further connected to the post-stage power ground AGND through a resistor R5; the negative end of the light emitting diode D2 is electrically connected with the second end of the resistor R4, and the positive end of the phototransistor U2 is connected with the first power supply VDD.
The buffer output unit 3 comprises a resistor R6, a resistor R7 and an operational amplifier A _ 2; the positive power supply end of the operational amplifier A _2 is connected with a first power supply VDD, the negative power supply end is connected with a second power supply VSS, and the negative power supply end of the operational amplifier A _2 is also connected with a rear-stage power supply ground AGND through a capacitor C2; the non-inverting input end of the operational amplifier A _2 is electrically connected with the photoelectric negative feedback unit 2 through a resistor R6, and the inverting input end of the operational amplifier A _2 is electrically connected with the output end of the operational amplifier A _2 through a resistor R7.
The current transmission ratio of the first photoelectric isolation structure 11 and the second photoelectric isolation structure 21 is the same, and the resistance of the resistor R2 is the same as that of the resistor R3; the voltage drop of the light emitting diode D1 is the same as that of the light emitting diode D2, and the resistance of the resistor R1 is the same as that of the resistor R4; the first power supply VDD provides a positive voltage, the second power supply VSS provides a negative voltage, and the front stage power ground GND and the rear stage power ground AGND are isolated from each other.
The working principle of the embodiment is as follows:
as shown in fig. 2, an input analog voltage Ui turns on a light emitting diode D1 through a resistor R1 to emit light, a phototransistor U1 receives an optical signal and then generates an optical current and amplifies the optical current to output a detection current, the detection current is converted into a voltage through the resistor R3 and is sent to a non-inverting input terminal of an operational amplifier a _1, an output terminal of the operational amplifier a _1 generates an output voltage, the voltage output by the operational amplifier a _1 is divided by a voltage dividing network composed of R4, R5 and D2 and then is sent to the non-inverting input terminal of the operational amplifier a _2 through the resistor R6, and the operational amplifier a _2, the resistor R6, the resistor R7 and a capacitor C2 form a transimpedance following buffer circuit to stably output the collected voltage.
Meanwhile, the voltage output by the operational amplifier A _1 also enables the light emitting diode D2 to be conducted and emit light, the phototransistor U2 generates optical current and amplifies the optical current after receiving an optical signal, the amplified current is converted into voltage through the resistor R2 and then is sent to the inverting input end of the operational amplifier A _1, so that the differential mode component of the input voltage of the operational amplifier A _1 is reduced, the output voltage of the operational amplifier A _1 is reduced, a negative feedback circuit is formed, and the output voltage of the operational amplifier A _1 is kept stable; then, if the input voltage Ui increases, the current flowing through the light emitting diode D1 increases, the output current generated by the phototransistor U1 also increases, so that the voltage at the non-inverting input terminal of the operational amplifier a _1 increases, the output voltage of the operational amplifier a _1 also increases, the current flowing through the light emitting diode D2 increases, the output current generated by the phototransistor U2 also increases, the voltage at the inverting input terminal of the operational amplifier a _1 increases, the differential mode component of the input voltage of the operational amplifier a _1 decreases, and a negative feedback circuit is formed, wherein the negative feedback operation flow is shown in fig. 3.
According to the 'virtual short' and 'virtual break' characteristics of the negative feedback circuit, the voltages of the non-inverting input end and the inverting input end of the operational amplifier A _1 are equal, so that the following formula is obtained:
(Ui-VD1)/R1×CTR1×R3＝ID2×CTR2×R2 (1)
wherein U isiIs the input voltage; vF1Is the voltage drop of led D1; CTR (China railway radio)1Is the current transfer ratio, CTR, between the LED D1 and the phototransistor U11＝IU1/ID1；CTR2Is the current transfer ratio, CTR, between the LED D2 and the phototransistor U22＝IU2/ID2；ID1Is the current flowing through the LED D1, IU1Is the current flowing through the phototransistor U1, ID2Is the current flowing through the led D2.
Therefore, when CTR is used1＝CTR2，R2＝R3When, ID2＝ID1＝(Ui-VD1)/R1；
And output voltage U0＝(ID2+VD2/R4)×R5The following equation is thus obtained:
U0＝((Ui-VD1)/R1+VD2/R4)×R5 (2)
when V isD1＝VD2，R1＝R4Then, the following formula can be obtained:
U0＝Ui/R1×R5 (3)
namely, it is
Uo/Ui＝R5/R1 (4)
From the derivation process of the above formula, it can be seen that when the input forward voltage drop and the current transfer ratio of the first optoelectronic isolation structure 11 and the second optoelectronic isolation structure 21 are the same, i.e. VD1＝VD2When CTR1 is CTR2, isolated linear detection of the input voltage Ui can be achieved by setting the resistance value of the resistor. Wherein R1 and R5 determine the voltage transfer coefficient of the circuit; the value of R1 is determined by the maximum amplitude of the input voltage, and by selecting a proper resistance value of the resistor R1, the photosensitive transistor U1 can be ensured to work in an amplification area all the time, so that the photosensitive transistor U1 is prevented from entering a saturation state, and the voltage drop of the resistors R2 and R3 is not changed along with the input voltage any more, thereby causing the condition of over-poor output precision; for example, if the transmission coefficient preset by the circuit is K, R4 ═ R1 and R5 ═ K × R4 are set. The whole circuit does not need power supply at the sampling input end, and can realize passive detection of the input voltage Ui.
Example 2
One embodiment of the isolated linear detection module with adjustable transmission coefficient of the invention is as follows:
as shown in fig. 3, an isolated linear detection module with adjustable transmission coefficient comprises the isolated linear detection circuit with adjustable transmission coefficient of embodiment 1, wherein the module adopts a DIP18 metal shell and adopts a PCB printed board as a carrier inside; firstly, sintering a PCB carrier at the bottom of a shell, connecting a shell lead with the PCB by adopting lead-tin-silver solder, and then welding a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C1, a capacitor C2 and a capacitor C3 on the PCB carrier, wherein the resistor R1, the resistor R4 and the resistor R5 are welded outside a packaging structure; and then bonding and fixing the chip containing the operational amplifier A _1 and the chip containing the operational amplifier A _2 on a PCB (printed Circuit Board), connecting the chips by gold wire pressure welding, bonding the chips and the PCB by conductive adhesive, fixing the positions of a light-emitting diode D1, a phototransistor U1, a light-emitting diode D2 and a phototransistor U2 by coupling debugging to ensure the consistency of an isolation structure, and finally packaging the devices in a packaging region by adopting parallel seam welding to form a packaging structure. Because the resistor R1, the resistor R4 and the resistor R5 are arranged outside the packaging structure, the resistance values of the resistor R1, the resistor R4 and the resistor R5 can be conveniently adjusted to adapt to different input voltage amplitudes and adjust the transfer coefficient of the circuit.
The passive detection of the sampling input end can be realized, the input voltage limitation is avoided, the transmission proportion is adjustable, the design is more flexible, and the passive detection is easy to popularize and apply.
The undescribed parts of the present invention are consistent with the prior art, and are not described herein.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures made by using the contents of the present specification and the drawings can be directly or indirectly applied to other related technical fields, and are within the scope of the present invention.

Claims (7)

1. The utility model provides a transmission coefficient adjustable keeps apart linear detection circuitry which characterized in that: the photoelectric isolation detection device comprises a photoelectric isolation detection unit (1), a photoelectric negative feedback unit (2) and a buffer output unit (3), wherein the photoelectric isolation detection unit (1) adopts a photoelectric isolation structure to detect an input voltage signal Ui and generate corresponding acquisition current; the photoelectric negative feedback unit (2) adopts an operational amplifier and a photoelectric isolation structure to form a negative feedback circuit, converts the acquired current into voltage, and divides the voltage output by the negative feedback circuit through a voltage division network to obtain the acquired voltage; the buffer output unit (3) adopts a trans-resistance following buffer circuit to ensure that the acquired voltage is stably output;
the photoelectric isolation detection unit (1) comprises a resistor R1, a light emitting diode D1 and a phototransistor U1, the light emitting diode D1 and the phototransistor U1 form a first photoelectric isolation structure (11), the positive end of the light emitting diode D1 is connected with an input voltage Ui through a resistor R1, the negative end of the light emitting diode D1 is connected with a front-stage power ground GND, the positive end of the phototransistor U1 is connected with a first power supply VDD, and the negative end of the phototransistor U1 is electrically connected with the input end of the photoelectric negative feedback unit (2);
the photoelectric negative feedback unit (2) comprises a resistor R2, a resistor R3, a resistor R4, a resistor R5, a light-emitting diode D2, a photosensitive transistor U2 and an operational amplifier A _1, wherein the light-emitting diode D2 and the photosensitive transistor U2 form a second photoelectric isolation structure (21); the non-inverting input end of the operational amplifier A _1 is electrically connected with the negative end of a photosensitive transistor U1, the non-inverting input end of the operational amplifier A _1 is further connected with a post-stage power ground AGND through a resistor R3, the inverting input end of the operational amplifier A _1 is electrically connected with the negative end of a photosensitive transistor U2, the inverting input end of the operational amplifier A _1 is further connected with the post-stage power ground AGND through a resistor R2, the output end of the operational amplifier A _1 is electrically connected with the positive end of a light emitting diode D2, the output end of the operational amplifier A _1 is further electrically connected with a first end of a resistor R4, a second end of the resistor R4 is electrically connected with the input end of the buffer output unit (3), and a second end of the resistor R4 is further connected with the post-stage power ground AGND through a resistor R5; the negative end of the light emitting diode D2 is electrically connected with the second end of the resistor R4, and the positive end of the phototransistor U2 is connected with a first power supply VDD; providing R4= R1, R5= K × R4; wherein, K is a transmission coefficient preset by the circuit.
2. The isolated linear detection circuit with adjustable transmission coefficient of claim 1, wherein: the photoelectric negative feedback unit (2) further comprises a capacitor C3, and the output end of the operational amplifier A _1 is electrically connected with the inverting input end of the operational amplifier A _1 through a capacitor C3.
3. The isolated linear detection circuit with adjustable transmission coefficient of claim 1, wherein: the first power supply VDD is connected to the post-stage power ground AGND through a capacitor C1, and the second power supply VSS is connected to the post-stage power ground AGND through a capacitor C2.
4. The isolated linear detection circuit with adjustable transmission coefficient of claim 1, wherein: the current transmission ratio of the first photoelectric isolation structure (11) and the second photoelectric isolation structure (21) is the same, and the resistance value of the resistor R2 is the same as that of the resistor R3.
5. The isolated linear detection circuit with adjustable transmission coefficient of claim 1, wherein: the voltage drop of the light emitting diode D1 is the same as that of the light emitting diode D2, and the resistance of the resistor R1 is the same as that of the resistor R4.
6. The isolated linear detection circuit with adjustable transmission coefficient of claim 1, wherein: the buffer output unit (3) comprises a resistor R6, a resistor R7 and an operational amplifier A _ 2; the positive power supply end of the operational amplifier A _2 is connected with a first power supply VDD, and the negative power supply end is connected with a second power supply VSS; the non-inverting input end of the operational amplifier A _2 is electrically connected with the photoelectric negative feedback unit (2) through a resistor R6, and the inverting input end of the operational amplifier A _2 is electrically connected with the output end of the operational amplifier A _2 through a resistor R7.
7. The utility model provides a transmission coefficient adjustable keeps apart linear detection module which characterized in that: the module comprises the isolated linear detection circuit with adjustable transmission coefficient, which is disclosed by any one of claims 1 to 6, and adopts a packaging structure, wherein the resistor R1, the resistor R4 and the resistor R5 are arranged outside the packaging structure.
CN201911270898.3A 2019-12-12 2019-12-12 Isolated linear detection circuit with adjustable transmission coefficient and module comprising same Active CN110967540B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203519695U (en) * 2013-09-24 2014-04-02 国家电网公司 Isolated direct current voltage acquisition circuit
CN205581187U (en) * 2016-02-03 2016-09-14 福州凯和电子有限公司 Optoelectronic isolation voltage measurement circuit
CN106706993A (en) * 2017-01-23 2017-05-24 惠州三华工业有限公司 Optocoupler current detection circuit
CN106773910A (en) * 2016-11-22 2017-05-31 天津航空机电有限公司 A kind of high linearity difference isolates sample circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203519695U (en) * 2013-09-24 2014-04-02 国家电网公司 Isolated direct current voltage acquisition circuit
CN205581187U (en) * 2016-02-03 2016-09-14 福州凯和电子有限公司 Optoelectronic isolation voltage measurement circuit
CN106773910A (en) * 2016-11-22 2017-05-31 天津航空机电有限公司 A kind of high linearity difference isolates sample circuit
CN106706993A (en) * 2017-01-23 2017-05-24 惠州三华工业有限公司 Optocoupler current detection circuit

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