CN207248358U - A kind of new SF6Gas leakage infrared detection background board - Google Patents
A kind of new SF6Gas leakage infrared detection background board Download PDFInfo
- Publication number
- CN207248358U CN207248358U CN201721328346.XU CN201721328346U CN207248358U CN 207248358 U CN207248358 U CN 207248358U CN 201721328346 U CN201721328346 U CN 201721328346U CN 207248358 U CN207248358 U CN 207248358U
- Authority
- CN
- China
- Prior art keywords
- temperature
- new
- gas leakage
- infrared detection
- background board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
This application discloses a kind of new SF6Gas leakage infrared detection background board, including electric power loop, PN junction, temperature survey and feedback module, temperature display and temperature display module；Electric power loop is by battery, power supply indicator, switch, variable resistor and forms the p-type semiconductor material of PN junction and N-type semiconductor material and conducting wire are in turn connected into；Electric power loop is located at new SF6At the top of gas leakage infrared detection background board, PN junction is located at new SF6Gas leakage infrared detection background board bottom, Peltier effect of the application based on semiconductor, produced by semiconductor system with the temperature difference of environment to improve the recall rate that gas leaks infrared leak detection, pass through temperature survey and feedback module, signal is fed back into adjustable resistance, eventually through resistance is changed, change electric current to realize the adjusting of temperature.New SF6Gas leakage infrared detection background board is imaged together with high-precision infrared thermoviewer, is conducive to improve the recall rate of gas leakage.
Description
Technical field
This application involves SF6Gas leakage infrared detection field, it is particularly a kind of that temperature is produced by semiconductor system and environment
Difference, to improve SF6Gas leaks the background board of infrared detection.
Background technology
SF6Gas has good electric insulating quality and excellent arc extinction performance, and arc extinguishing ability is 100 times of air, is
A kind of super-pressure insulating dielectric materials of new generation better than between air and oil, in breaker, gas-insulated switch and high pressure
It is widely used in transformer.GIS, is called SF6Gas-insulated switch.GIS is to use hypobaric SF6Gas, N2 gases or mixed
Dielectric of the gas as switchgear is closed, the medium pressure elements such as busbar, breaker, disconnecting switch are concentrated and are enclosed in babinet
In, integrated use modern times insulation technology, cut-off technology, manufacturing technology, sensing technology, the new and high technology production of digital technology production
Product.GIS integrates intelligent control, protection, monitoring, measurement, the new high-tech product of communication, has small, light-weight, peace
Good perfection, reliability are high, adapt to severe environmental conditions etc. a little.
SF6In use, pressure is maintained at 0.5-0.6Mpa to gas-insulated switch when it runs, and plays and is dielectrically separated from
Effect.When gas pressure declines, its insulation performance also declines therewith.Leaked when gas occurs for switch, cause gas pressure
When dropping to a certain critical value, insulation breakdown will occur, cause switchgear to burn.In day-to-day operation, common leakage is former
Because including sealing performance decline, crackle, loosening etc..SF6The detection of gas leakage is the weight of equipment investment operation or regular maintenance
Want link.At present, most common leak hunting method is to carry out infrared imaging to leakage point using high-precision infrared thermoviewer, it is profit
Use SF6Gas long wave infrared region strong absorption characteristic, and then analyze detect collection of illustrative plates or video to carry out image checking.
Substantial amounts of experiment shows, carries out leak detection using high-precision infrared thermoviewer, outdoor gas switchgear is let out
Missing inspection extracting rate is higher (about 30%), and the leakage recall rate of cubicle switch is relatively low (about 15%).Indoor and outdoor leakage recall rate
Service requirement is not reached much.Gas leakage point is can not find when even detecting, substantial amounts of trouble is brought to follow-up operation and maintenance,
Possibly even burning apparatus, causes huge economic loss.
Utility model content
This application provides a kind of new SF6Gas leakage infrared detection background board, when detecting, coordinates infrared thermoviewer
It is imaged together, gas leakage lowly, is even can not find there are verification and measurement ratio to solve to be used alone infrared thermoviewer in the prior art
The problems such as point.
A kind of new SF that the application provides6Gas leakage infrared detection background board, including electric power loop, PN junction, temperature
Measurement and feedback module, temperature display and temperature setting key.
The electric power loop is by battery, power supply indicator, switch, variable resistor and forms the p-type of the PN junction and partly leads
Body material and N-type semiconductor material and conducting wire are in turn connected into；
One end of the temperature survey and feedback module is connected with the variable resistor, the other end and the N-type for forming PN junction
Semi-conducting material connects；
The temperature survey is connected with feedback module with the temperature display and the temperature setting key；
The electric power loop is located at new SF6At the top of gas leakage infrared detection background board, the PN junction is located at new SF6
Gas leakage infrared detection background board bottom；
The outside of the electric power loop is provided with plastic housing.
Preferably, the outside of the PN junction is enclosed with metal layer.
Preferably, the p-type semiconductor material is Ag (1-x) Cu (x) TiTe, and the N-type semiconductor material is Bi-Sb.
Preferably, the temperature display module includes temperature increasing key and temperature reduces key.
Preferably, the temperature display is liquid crystal display.
Preferably, the battery is rechargeable lithium battery.
Preferably, the plastic housing top is provided with handle.
From above-described embodiment as can be seen that a kind of new SF that the application provides6Gas leakage infrared detection background board, bag
Include electric power loop, PN junction, temperature survey and feedback module, temperature display and temperature display module；The electric power loop is by electricity
Pond, power supply indicator, switch, variable resistor and formed p-type semiconductor material and the N-type semiconductor material of the PN junction with
And conducting wire is in turn connected into；One end of the temperature survey and feedback module is connected with the variable resistor, and the other end is with forming
The N-type semiconductor material connection of PN junction；The temperature survey is shown with feedback module and the temperature display and the temperature
Show that module is connected；The electric power loop is located at new SF6At the top of gas leakage infrared detection background board, the PN junction is positioned at new
SF6Gas leakage infrared detection background board bottom；The outside of the electric power loop 1 is provided with plastic housing.In the present embodiment, SF6
Need to be imaged together with high-precision infrared thermoviewer when gas leakage infrared detection background board works, be conducive to improve gas leakage
Recall rate.SF6The operation principle of gas leakage infrared detection background board is the Peltier effect based on PN junction, that is, utilizes and work as P
The circuit of type semi-conducting material and N-type semiconductor material composition and when being connected with direct current, can also in joint in addition to Joule heat
Some other heat is discharged, and another joint then absorbs heat, absorption and liberated heat and current strength are into just
Than, and it is related with the temperature of the property of two kinds of conductors and hot junction.Pass through variable resistor, temperature survey and feedback module, temperature at the same time
Degree display screen and temperature display module and the cooperation cooperation of component is waited to complete work together.Specifically, by temperature survey with
Feedback module, feeds back to adjustable resistance by signal, obtains size eventually through change resistance change current value to realize the tune of temperature
Section.The device can be with the new SF of real-time display6The temperature produced after gas leakage infrared detection background board refrigeration near plate face,
By temperature setting module, can be provided with beneficial to raising SF6The temperature of Leakage inspection sensitivity.The device is as gas
Reveal infrared detection background board, have it is easy to operate, it is of low cost and improve live power switch gas leakage recall rate
Advantage.
Brief description of the drawings
In order to illustrate more clearly of the technical solution of the application, letter will be made to attached drawing needed in the embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without having to pay creative labor,
Other attached drawings can also be obtained according to these attached drawings.
Fig. 1 is the new SF that the application provides6Gas leakage structure diagram；
Fig. 2 is the existing temperature survey and feedback module electrical block diagram that the application provides；
Fig. 3 is the electrical block diagram for the existing temperature display module that the application provides；
Fig. 4 is the PN junction Peltier effect principle schematic that the application provides.
In figure, 1- electric power loops, 2-PN is tied, 3- plastic housings, 11- batteries, 12- power supply indicators, 13- switches, and 14- is variable
Resistance, 15- temperature surveys and feedback module, 16- temperature displays, 17- temperature setting modules, 18- conducting wires, 19- handles, 21-
P-type semiconductor material, 22-N type semi-conducting materials, 31- temperature increasing keys, 32- temperature reduce key, the first insulating ceramicses of 100-
Piece, the second insulating ceramic films of 200-, 300- metallic conductors, 400- power supplys.
Embodiment
Referring to Fig. 1, a kind of new SF provided for the application6Gas leakage infrared detection background plate structure schematic diagram.
Experiment proof, new SF6Gas leakage infrared detection background board is after refrigeration together with high-precision infrared thermoviewer
SF can be improved6The verification and measurement ratio of gas leakage.Refrigeration Technique is very much, and the utility model is the reality with reference to gas on-site leak detection
Border, is adjusted to realize the temperature difference of background board and environment using semiconductor refrigerating and temperature dynamic, then improves SF6Gas leakage is examined
Survey rate.
New SF6Gas leakage infrared detection background board includes electric power loop 1, PN junction 2, temperature survey and feedback module
15th, temperature display 16 and temperature setting module 17.
Wherein, electric power loop 1 by battery 11, power supply indicator 12, switch 13, variable resistor 14 and forms the PN
The p-type semiconductor material 21 and N-type semiconductor material 22 and conducting wire 18 of knot 2 are in turn connected into；The temperature survey and feedback
One end of module 15 is connected with the variable resistor 14, and the other end is connected with forming the N-type semiconductor material 22 of PN junction 2；It is described
Temperature survey is connected with feedback module 15 with the temperature display 16 and the temperature setting module 17；The electric power loop
1 is located at new SF6At the top of gas leakage infrared detection background board, the PN junction 2 is located at new SF6Gas leakage infrared detection is carried on the back
Scape plate bottom；The outside of the electric power loop 1 is provided with plastic housing 3.
Temperature survey and feedback module 15 be an existing, ripe module, it can be achieved that mode it is also very much.Referring to figure
2, for the existing temperature survey that the application provides and the electrical block diagram of feedback module 15.
Temperature setting module 17 belongs to the prior art, and temperature setting module 17, will by temperature survey and feedback module 15
Signal feeds back to variable resistor 14, and the adjusting of temperature is realized eventually through the change current value size of resistance 14 is changed.Referring to figure
3, the electrical block diagram of the existing temperature setting module 17 provided for the application.
Temperature setting module 17 includes temperature increasing key 31 and temperature reduces key 32.According to environment temperature, increased by temperature
Plus key 31 and temperature reduce the target temperature that key 32 sets a background board, to form the temperature difference of maximum as far as possible, pass through institute
State temperature increasing key 31 and the temperature reduces key 32 and can realize the "+" and "-" of temperature.
Further, the outside of the PN junction 2 is enclosed with metal layer.PN junction 2 is exactly the both sides one piece of intrinsic semiconductor
Different elements is mixed, is made while being the p-type semiconductor material 21, another side is the N-type semiconductor material 22.Described
The special thin layer that p-type semiconductor material 21 and 22 contact surface of N-type semiconductor material are formed.The p-type semiconductor material 21
In the silicon crystal for referring to mix a small amount of magazine boron element, since semiconductor atom is substituted by foreign atom, the three of boron atom outer layer
When a outer-shell electron and the semiconductor atom of surrounding form covalent bond, one " hole " can be produced, this " hole " may
Attract bound electron " filling " so that boron atom becomes electronegative ion.In this way, this based semiconductor is due to containing more highly concentrated
" hole " of degree, becomes the material for being capable of conduction.The N-type semiconductor material 22 refers to the silicon wafer for mixing a small amount of magazine P elements
In body, since semiconductor atom is substituted by foreign atom, wherein four of five electronics of phosphorus atoms outer layer partly lead with surrounding
Body atom forms covalent bond, and an electronics having more hardly carries the baby, easier as free electron.Therefore, it is conductive
Property be primarily due to free electron conduction.
Further, PN junction is the main body for producing Peltier effect, and the main body of refrigeration, and so-called Peltier effect refers to
When the circuit being made up of electric current different conductors, in addition to irreversible Joule heat is produced, at the street corner of different conductor
Different with current direction can occur heat absorption, exothermic phenomenon respectively, when changing current direction, the connector of heat release and heat absorption also with
Change.I.e. described PN junction 2 is made of p-type semiconductor material 21,22 material of N-type semiconductor material, after DC current is passed through,
Because the direction that direct current is passed through is different, heat absorption and exothermic phenomenon will be produced at node, referring to Fig. 4, the PN provided for the application
The Peltier effect principle schematic of knot 2.Wherein, which can include the first insulating ceramic film 100, the second insulating ceramic film
200th, metallic conductor 300, power supply 400 and p-type semiconductor material 21 and N-type semiconductor material 22.First insulating ceramic film
100 be cold end, and the second insulating ceramic film 200 is hot junction.
In addition, it is different according to the current direction for flowing through PN junction 2,21 high temperature of p-type semiconductor material, N-type semiconductor will be produced
21 low temperature of 22 low temperature of material or p-type semiconductor material, the situation of 22 high temperature of N-type semiconductor material.As long as electric current is continued for making
Cold, the situation of one face low temperature of a face high temperature is with regard to that can be maintained.According to onsite application situation, if site environment temperature is high,
It is on the contrary then be used as background by the use of high temperature face by the use of chill surface as background, it is therefore an objective to manufacture and the temperature difference of environment temperature.
Further, in one layer of metal of parcel of the PN junction 2, such as copper is good using metal heat-conducting performance, fireballing excellent
Gesture, can realize new SF rapidly6Gas leakage infrared detection background board surface temperature is uniformly distributed.
Further, the p-type semiconductor material 21 is Ag (1-x) Cu (x) TiTe, the N-type semiconductor material 22
For Bi-Sb.
AgTiTe materials due to very low thermal conductivity, as can by suitably adulterate improve its carrier mobility and
Electrical conductivity, it would be possible to obtain higher figure of merit.In addition, AgTiTe and CuTiTe is formed into solid solution by preferably matching
Body, after replacing part Ag atoms using Cu atoms, can obtain a kind of P-type semiconductor refrigerating material Ag (1- of better performances
X) at 0.3 or so, the thermoelectricity capability of material is best by Cu (x) TiTe, wherein x, therefore visible Ag (1-x) Cu (x) TiTe are one
The preferable P-type semiconductor refrigerating material of kind.
Undoped Bi-Sb alloys are the highest semiconductor refrigerating materials of figure of merit in current 20K to 220K temperature ranges
Material, it is N-type that it, which is carried in richness Bi regions, and translates into p-type when Sb contents are more than 75%.Sb is introduced in the monocrystal of Bi,
The width between conduction band and forbidden band is widened., the increase of energy gap will improve the thermoelectromotive force of material.Therefore it is visible
Bi-Sb is a kind of preferable N-type semiconductor refrigerating material.
Further, the temperature display 16 is liquid crystal display.Especially with LED liquid crystal displays, normally make
It is 20mA, voltage 5V with electric current, it is possible to which driving display, each point of liquid crystal display are just always maintained at after receiving signal
Constant brightness and color, normal service life are 8-10 ten thousand hours, and also have with digitlization display effect, liquid crystal display
The advantages such as power energy consumption is small, Environmental Safety, integrate and see display quality higher.
Further, the battery 11 is rechargeable lithium battery.Lithium battery self discharge is small, it holds after some time is placed
Amount loses also very little, and rated voltage is high, and high/low temperature is adaptable, environmentally protective, no matter producing, using and scrap.All do not contain,
The poisonous and harmful metallic element such as any lead, mercury and cadmium and material are not produced yet.And the internal resistance of lithium battery is small, dramatically reduces electricity
Pond from power consumption, have a safety feature, use plastic-aluminum flexible packing, be at most also bulge once hidden danger occurs.It is particularly chargeable
Lithium battery, service life cycle length, substantially increases the value of recycling.
Further, 3 top of plastic housing is provided with handle 19.By the handle 19 on plastic housing 3, can operate
Middle to increase the convenience guided and supported, handle 19 empties design on plastic housing 3, beautiful to save material again.
From above-described embodiment as can be seen that a kind of new SF that the application provides6Gas leakage infrared detection background board, bag
Include electric power loop 1, PN junction 2, temperature survey and feedback module 15, temperature display 16 and temperature setting module 17；The power supply
Circuit 1 is by battery 11, power supply indicator 12, switch 13, variable resistor 14 and the P-type semiconductor material for forming the PN knots 2
Material 21 and N-type semiconductor material 22 and conducting wire 18 are in turn connected into；The one end and institute of the temperature survey with feedback module 15
State variable resistor 14 to connect, the other end is connected with forming the N-type semiconductor material 22 of PN junction 2；The temperature survey and feedback mould
Block 15 is connected with the temperature display 16 and the temperature setting module 17；The electric power loop 1 is located at new SF6Gas
At the top of body leakage infrared detection background board, the PN junction 2 is located at new SF6Gas leakage infrared detection background board bottom；It is described
The outside of electric power loop 1 is provided with plastic housing 3.In the present embodiment, new SF6When gas leakage infrared detection background board works
Need to be imaged together with high-precision infrared thermoviewer, be conducive to improve the recall rate of gas leakage.New SF6Gas leakage is infrared
The operation principle for detecting background board is the Peltier effect based on PN junction 2, i.e., is partly led using when p-type semiconductor material 21 and N-type
Circuit that body material 22 forms and when being connected with direct current, some other heat can be also discharged in joint in addition to Joule heat
Amount, and another joint then absorbs heat, absorbs and liberated heat is directly proportional to current strength, and with the property of two kinds of conductors
Matter and the temperature in hot junction are related.Pass through variable resistor 14, temperature survey and feedback module 15, temperature display 16 and temperature at the same time
The cooperation of setting module 17 and grade component cooperates to complete work together.Specifically, by temperature survey and feedback module 15, will
Signal feeds back to variable resistor 14, obtains size eventually through the change current value of variable resistor 14 to realize the adjusting of temperature.The dress
Putting can be with the new SF of real-time display6The temperature produced after gas leakage infrared detection background board refrigeration near plate face, passes through temperature
Setting module 17 is spent, can be provided with beneficial to the new SF of raising6The temperature of Leakage inspection sensitivity.The device is as gas
Reveal infrared detection background board, have it is easy to operate, it is of low cost and improve the excellent of live power switch gas leakage recall rate
Gesture.
Those skilled in the art will readily occur to this practicality after considering specification and putting into practice utility model disclosed herein
New other embodiments.This application is intended to cover any variations, uses, or adaptations of the utility model, these
Variations, uses, or adaptations follow the general principle of the utility model and including undocumented skills of the utility model
Common knowledge or conventional techniques in art field.Description and embodiments be considered only as it is exemplary, the utility model
True scope and spirit are pointed out by following claim.
It should be appreciated that the accurate knot that the utility model is not limited to be described above and is shown in the drawings
Structure, and various modifications and changes may be made without departing from the scope thereof.The scope of the utility model only will by appended right
Ask to limit.
Claims (7)
- A kind of 1. new SF6Gas leakage infrared detection background board, it is characterised in that including electric power loop (1), PN junction (2), temperature Degree measurement and feedback module (15), temperature display (16) and temperature setting module (17)；The electric power loop (1) is by battery (11), power supply indicator (12), switch (13), variable resistor (14) and forms institute The p-type semiconductor material (21) and N-type semiconductor material (22) and conducting wire (18) for stating PN junction (2) are in turn connected into；The temperature survey is connected with one end of feedback module (15) with the variable resistor (14), and the other end is with forming PN junction (2) N-type semiconductor material (22) connection；The temperature survey and feedback module (15) and the temperature display (16) and the temperature setting module (17) phase Even；The electric power loop (1) is located at new SF6At the top of gas leakage infrared detection background board, the PN junction (2) is positioned at new SF6Gas leakage infrared detection background board bottom；The outside of the electric power loop (1) is provided with plastic housing (3).
- 2. new SF according to claim 16Gas leakage infrared detection background board, it is characterised in that the PN junction (2) Outside be enclosed with metal layer.
- 3. new SF according to claim 16Gas leakage infrared detection background board, it is characterised in that the p-type is partly led Body material (21) is Ag (1-x) Cu (x) TiTe, and the N-type semiconductor material (22) is Bi-Sb.
- 4. new SF according to claim 16Gas leakage infrared detection background board, it is characterised in that the temperature setting Module (17) includes temperature increasing key (31) and temperature reduces key (32).
- 5. new SF according to claim 16Gas leakage infrared detection background board, it is characterised in that the temperature display It is liquid crystal display to shield (16).
- 6. new SF according to claim 16Gas leakage infrared detection background board, it is characterised in that the battery (11) For rechargeable lithium battery.
- 7. new SF according to claim 16Gas leakage infrared detection background board, it is characterised in that the plastic housing (3) top is provided with handle (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721328346.XU CN207248358U (en) | 2017-10-16 | 2017-10-16 | A kind of new SF6Gas leakage infrared detection background board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721328346.XU CN207248358U (en) | 2017-10-16 | 2017-10-16 | A kind of new SF6Gas leakage infrared detection background board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207248358U true CN207248358U (en) | 2018-04-17 |
Family
ID=61882677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721328346.XU Active CN207248358U (en) | 2017-10-16 | 2017-10-16 | A kind of new SF6Gas leakage infrared detection background board |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207248358U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109632193A (en) * | 2018-12-13 | 2019-04-16 | 广西电网有限责任公司电力科学研究院 | A kind of field working conditions complexity infrared imaging detection background board and its application method |
| CN110243542A (en) * | 2019-05-31 | 2019-09-17 | 国网上海市电力公司 | A kind of SF6Gas leaks imaging detection method and detection device |
| CN112284545A (en) * | 2020-10-15 | 2021-01-29 | 云南电网有限责任公司电力科学研究院 | System and method for adjusting background temperature in cable tunnel |
| CN113155913A (en) * | 2021-04-21 | 2021-07-23 | 浙江大学 | Gas sensor for detecting sulfur hexafluoride decomposition product and preparation method thereof |
| CN115901864A (en) * | 2022-11-23 | 2023-04-04 | 南京邮电大学 | Array type multi-temperature-zone gas sensor and preparation method thereof |
-
2017
- 2017-10-16 CN CN201721328346.XU patent/CN207248358U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109632193A (en) * | 2018-12-13 | 2019-04-16 | 广西电网有限责任公司电力科学研究院 | A kind of field working conditions complexity infrared imaging detection background board and its application method |
| CN110243542A (en) * | 2019-05-31 | 2019-09-17 | 国网上海市电力公司 | A kind of SF6Gas leaks imaging detection method and detection device |
| CN112284545A (en) * | 2020-10-15 | 2021-01-29 | 云南电网有限责任公司电力科学研究院 | System and method for adjusting background temperature in cable tunnel |
| CN113155913A (en) * | 2021-04-21 | 2021-07-23 | 浙江大学 | Gas sensor for detecting sulfur hexafluoride decomposition product and preparation method thereof |
| CN115901864A (en) * | 2022-11-23 | 2023-04-04 | 南京邮电大学 | Array type multi-temperature-zone gas sensor and preparation method thereof |
| CN115901864B (en) * | 2022-11-23 | 2024-01-19 | 南京邮电大学 | Array type multi-temperature-zone gas sensor and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207248358U (en) | A kind of new SF6Gas leakage infrared detection background board | |
| Granados et al. | Metallic state and the metal-insulator transition of NdNiO 3 | |
| Sefat et al. | Structure and anisotropic properties of BaFe 2− x Ni x As 2 (x= 0, 1, and 2) single crystals | |
| CN104198803B (en) | A kind of on-line monitoring system of high-temperature superconducting magnet | |
| CN105088043A (en) | Liquid alloy, preparing method of liquid alloy and application of liquid alloy | |
| CN103399044B (en) | The apparatus and method of in-situ test conductive species transport property under High Temperature High Pressure | |
| CN103219927A (en) | Passive power supply for electrical device detection | |
| CN207765547U (en) | A kind of conducting liquid battery and its leak detecting device | |
| CN110567841A (en) | Multifunctional gas density monitor and monitoring system | |
| US8860078B2 (en) | Simplified devices utilizing novel pn-semiconductor structures | |
| EP2852984A1 (en) | Simplified devices utilizing novel pn-semiconductor structures | |
| CN105305954A (en) | Photovoltaic module and terminal box with isolation communication function | |
| CN110553801A (en) | Multifunctional gas density monitor and system based on edge calculation | |
| CN201927252U (en) | Hall-Effect experimental device with timed protection function | |
| Li et al. | On-line temperature monitoring of the GIS contacts based on infrared sensing technology | |
| CN111579105A (en) | Self-powered cable temperature measuring device | |
| CN201004353Y (en) | External serial clearance arrester with failure indication device | |
| Goldberg et al. | Weak field magnetoresistance of n-type germanium | |
| CN203242080U (en) | Power equipment heating temperature alarm | |
| CN208060031U (en) | A kind of wireless temperature measuring device | |
| CN106595896A (en) | Carbon ceramic temperature sensor temperature monitoring control device | |
| CN207009456U (en) | A kind of novel photovoltaic thermo-electric generation integrated chip | |
| Usuki et al. | Ionic conduction in liquid Ag–Se and Ag–Te systems | |
| CN214426860U (en) | Transformer oil temperature acquisition and calibration device | |
| CN211178578U (en) | Device for on-line detection of purity of sulfur hexafluoride gas |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |