CN207159349U - A kind of heater and chemical vapor depsotition equipment - Google Patents
A kind of heater and chemical vapor depsotition equipment Download PDFInfo
- Publication number
- CN207159349U CN207159349U CN201720969251.XU CN201720969251U CN207159349U CN 207159349 U CN207159349 U CN 207159349U CN 201720969251 U CN201720969251 U CN 201720969251U CN 207159349 U CN207159349 U CN 207159349U
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- heating wire
- heater
- chemical vapor
- reative cell
- depsotition equipment
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Abstract
The utility model discloses a kind of heater and chemical vapor depsotition equipment, suitable for chemical vapor depsotition equipment, belong to ic manufacturing technology field, suitable for chemical vapor depsotition equipment, chemical vapor depsotition equipment includes reative cell and exhaust apparatus, exhaust apparatus is connected by the exhaust outlet being arranged on reative cell with reative cell, and heater is arranged at the bottom of reative cell；Heater includes more heating wire；More heating wire are distributed in a circular flat by bending；More heating wire are in the distance in circular flat apart from exhaust outlet by closely to remote, distribution density gradually reduces.The beneficial effect of above-mentioned technical proposal is：Region is distributed from spare to dense to surrounding corresponding to the heating wire from exhaust outlet of heater, so that heater is higher close to heat caused by the region of exhaust, compensate the heat taken away by pumping, so that wafer is heated evenly in vapor deposition processes, and then improve the homogeneity of crystal column surface coating film thickness.
Description
Technical field
It the utility model is related to ic manufacturing technology field, more particularly to a kind of applicable chemical vapor depsotition equipment
Heater and chemical vapor depsotition equipment.
Background technology
Semiconductor fabrication process enters at a quick pace the 22nm node epoch, because critical size reduces, in semiconductor devices
Formed in contact hole it is also less and less, traditional metallic aluminium can not deposit in the contact hole well, thus be changed to profit
Aluminium is substituted to make metal interconnecting wires with tungsten, because the trench filling capacity of tungsten is strong.Titanium nitride is as a kind of low-resistivity, Gao Hua
The dielectric material for learning stability is widely used in metal contact and inter-level vias technique.In conventional semiconductors processing procedure, generally
The silicide of tungsten bolt and lower floor is connected using titanium and titanium nitride membrane.Stop/adhesion layer of the titanium nitride as tungsten, can stop
The diffusion of tungsten, the titanium film of the reacting gas tungsten hexafluoride in tungsten bolt generating process and lower floor is avoided to react to form defect；It and tungsten
Between again have good adhesion, tungsten can be fully sticked on contact hole.
In order to reach preferable stepcoverage performance, usually using MOCVD (Metal Organic Chemical Vapor
Deposition, metal organic chemical compound vapor deposition) method grow stop/adhesion layer titanium nitride film.Chemical vapor deposition
Product equipment is included with reative cell, and heater is provided with reative cell, and the support of carrying wafer is provided on heater
Disk, reacting gas four (dimethylamino) titanium is filled with during work into reative cell, device for simultaneous heating heats to wafer, makes reaction gas
Body, which resolves into titanium nitride and is deposited on wafer, forms titanium nitride membrane, and the small temperature difference of conversion zone is just in course of reaction
The thickness of generation can be had an impact.
Because MOCVD techniques there are strict requirements to reacting gas concentration, pressure, therefore need to pump during the course of the reaction
Unnecessary gas in reative cell, the exhaust outlet of reative cell are normally at the top of the edge of heater.In the prior art, such as
Shown in Fig. 1, heater is all uniformly arranged mostly, and caused heat is equal everywhere, during being evacuated to reative cell,
Corresponding heat can be taken away so that pallet corresponds to other positions of temperature less than pallet of exhaust ports, influences to react at this
The decomposition of gas so that titanium nitride concentration is low at this, further results in the titanium nitride membrane that is deposited on the wafer at this
Thickness is thinner than normal level, influences to plate membrane efficiency and the homogeneity of coating film thickness.
The content of the invention
According to the above-mentioned problems in the prior art, a kind of heat that can compensate for taking away by pumping is now provided, makes crystalline substance
Circle is heated evenly in vapor deposition processes, is set so as to improve the heater of the homogeneity of coating film thickness and chemical vapor deposition
It is standby.The utility model adopts the following technical scheme that：
A kind of heater, suitable for chemical vapor depsotition equipment, the chemical vapor depsotition equipment include reative cell and
Exhaust apparatus, the exhaust apparatus are connected by the exhaust outlet being arranged on the reative cell with the reative cell, the heating
Device is arranged at the bottom of the reative cell；
The heater includes more heating wire；
The more heating wire are distributed in a circular flat by bending；
The more heating wire in exhaust outlet described in distance in the circular flat distance by closely to remote, distribution density by
Step reduces.
Preferably, in above-mentioned heater, multiple joints of the more heating wire are not in contact with each other ground concentrated setting in one
Precalculated position.
Preferably, in above-mentioned heater, the more heating wire include the first heating wire and the second heating wire；
First heating wire forms multiple curved portions being nested, and surrounds the precalculated position；
Second heating wire is circumferentially disposed along the circular flat periphery, and surrounds first heating wire.
Preferably, in above-mentioned heater, multiple arch sections that first heating wire is formed into left and right both wings,
The burble point of the left and right both wings of all curved portions is on same straight line with the precalculated position.
Preferably, in above-mentioned heater, second heating wire is divided into two arc-shaped bends in left and right, the left and right two
The burble point of arc-shaped bend is located on the straight line.
Preferably, in above-mentioned heater, in addition to a pallet for being used to carry wafer, the shape of the pallet are corresponding
The circular flat；
The pallet is arranged on the heating wire.
Preferably, in above-mentioned heater, the more heating wire are made up of identical material.
Preferably, in above-mentioned heater, the more heating wire have identical cross section.
Also include, a kind of chemical vapor depsotition equipment, wherein, including any of the above-described described heater.
The beneficial effect of above-mentioned technical proposal is：Region corresponding to the heating wire from exhaust outlet of heater is to surrounding by close
Gradually dredge distribution so that heater is higher close to heat caused by the region of exhaust, compensates the heat taken away by pumping, so that
Wafer is heated evenly in vapor deposition processes, and then improves the homogeneity of crystal column surface coating film thickness.
Brief description of the drawings
Fig. 1 is the structural representation of the heater of chemical vapor depsotition equipment in the prior art；
Fig. 2 is a kind of structural representation of heater in preferred embodiment of the present utility model.
Embodiment
The utility model is described in further detail with specific embodiment below in conjunction with the accompanying drawings, but not as of the present utility model
Limit.
In preferred embodiment of the present utility model, as shown in Figure 2, there is provided a kind of heater, suitable for chemical gaseous phase
Depositing device, chemical vapor depsotition equipment include reative cell and exhaust apparatus, and exhaust apparatus passes through the row that is arranged on reative cell
Gas port connects with reative cell, and heater is arranged at the bottom of reative cell；
Heater includes more heating wire；
More heating wire are distributed in a circular flat by bending；
More heating wire are in the distance in circular flat apart from exhaust outlet by closely to remote, distribution density gradually reduces.
In above-mentioned technical proposal, more heating wire are in the distance in circular flat apart from exhaust outlet by closely to remote, distribution is close
Degree gradually reduces so that and heater is higher close to heat caused by the region of exhaust outlet, compensates the heat taken away by pumping, from
And wafer is heated evenly in vapor deposition processes, and then improve the homogeneity of crystal column surface coating film thickness.
In preferred embodiment of the present utility model, multiple joints 1 of more heating wire be not in contact with each other ground concentrated setting in
One precalculated position.Every heating wire includes a joint 1, and each joint 1 includes two terminals, for connecting heating power supply just
Negative pole.
In preferred embodiment of the present utility model, more heating wire include the first heating wire 2 and the second heating wire 3；
First heating wire 2 forms multiple curved portions being nested, and surrounds precalculated position；
Second heating wire 3 is circumferentially disposed along circular flat periphery, and surrounds the first heating wire 2.
In preferred embodiment of the present utility model, the multiple arcs part that the first heating wire 2 is formed is into left and right both wings, institute
The burble point and precalculated position for having the left and right both wings of curved portions are on same straight line.
In preferred embodiment of the present utility model, the second heating wire 3 is divided into two arc-shaped bends in left and right, the arc of left and right two
The burble point of shape bending is located on above-mentioned straight line.
In preferred embodiment of the present utility model, in addition to a pallet for being used to carry wafer, the shape pair of pallet
Answer circular flat；
Pallet is arranged on heating wire.
In preferred embodiment of the present utility model, more heating wire are made up of identical material.
In preferred embodiment of the present utility model, more heating wire have identical cross section.
The principle of the technical solution of the utility model is to make heater close by improving the distribution density of heating wire
Heat caused by the region of exhaust outlet is higher, compensates the heat taken away by pumping, it is therefore desirable to the production everywhere of every heating wire
Raw heat is identical, can be achieved using the heating wire of same model specification, compared to by changing the resistance of heating wire everywhere
To realize heat compensation, the heater in the technical solution of the utility model realizes that difficulty is small, is easy to largely produce.
In the technical solution of the utility model, in addition to, a kind of chemical vapor depsotition equipment, the chemical vapor depsotition equipment
Use above-mentioned heater.
The foregoing is only the utility model preferred embodiment, not thereby limit embodiment of the present utility model and
Protection domain, to those skilled in the art, it should can appreciate that all with the utility model specification and diagram
Hold the scheme obtained by made equivalent substitution and obvious change, should be included in protection model of the present utility model
In enclosing.
Claims (9)
1. a kind of heater, suitable for chemical vapor depsotition equipment, the chemical vapor depsotition equipment includes reative cell and row
Device of air, the exhaust apparatus are connected by the exhaust outlet being arranged on the reative cell with the reative cell, it is characterised in that
The heater is arranged at the bottom of the reative cell；
The heater includes more heating wire；
The more heating wire are distributed in a circular flat by bending；
The more heating wire in exhaust outlet described in distance in the circular flat distance by closely to remote, distribution density progressively drops
It is low.
2. heater as claimed in claim 1, it is characterised in that multiple joints of the more heating wire are not in contact with each other ground
Concentrated setting is in a precalculated position.
3. heater as claimed in claim 2, it is characterised in that the more heating wire include the first heating wire and second
Heating wire；
First heating wire forms multiple curved portions being nested, and surrounds the precalculated position；
Second heating wire is circumferentially disposed along the circular flat periphery, and surrounds first heating wire.
4. heater as claimed in claim 3, it is characterised in that multiple curved portions that first heating wire is formed
It is divided into left and right both wings, burble point and the precalculated position of the left and right both wings of all curved portions are on same straight line.
5. heater as claimed in claim 4, it is characterised in that second heating wire is divided into two curved bends in left and right
Song, the burble point of two arc-shaped bends in the left and right are located on the straight line.
6. heater as claimed in claim 1, it is characterised in that described also including a pallet for being used to carry wafer
The shape of pallet corresponds to the circular flat；
The pallet is arranged on the heating wire.
7. heater as claimed in claim 1, it is characterised in that the more heating wire are made up of identical material.
8. heater as claimed in claim 1, it is characterised in that the more heating wire have identical cross section.
9. a kind of chemical vapor depsotition equipment, it is characterised in that including the heater as described in any in claim 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720969251.XU CN207159349U (en) | 2017-08-04 | 2017-08-04 | A kind of heater and chemical vapor depsotition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720969251.XU CN207159349U (en) | 2017-08-04 | 2017-08-04 | A kind of heater and chemical vapor depsotition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207159349U true CN207159349U (en) | 2018-03-30 |
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ID=61715188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720969251.XU Active CN207159349U (en) | 2017-08-04 | 2017-08-04 | A kind of heater and chemical vapor depsotition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207159349U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110894598A (en) * | 2018-09-12 | 2020-03-20 | 长鑫存储技术有限公司 | Deposition furnace tube |
-
2017
- 2017-08-04 CN CN201720969251.XU patent/CN207159349U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110894598A (en) * | 2018-09-12 | 2020-03-20 | 长鑫存储技术有限公司 | Deposition furnace tube |
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