CN207051899U - A kind of equivalent simulation circuit of Hewlett-Packard's memristor model - Google Patents
A kind of equivalent simulation circuit of Hewlett-Packard's memristor model Download PDFInfo
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- CN207051899U CN207051899U CN201720486196.9U CN201720486196U CN207051899U CN 207051899 U CN207051899 U CN 207051899U CN 201720486196 U CN201720486196 U CN 201720486196U CN 207051899 U CN207051899 U CN 207051899U
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Abstract
The utility model provides a kind of equivalent simulation circuit of Hewlett-Packard's memristor model, belongs to electron and electrician technical field.It solves existing Hewlett-Packard's memristor model and obtains the technical problems such as hardly possible, cost height.This analog circuit includes resistance R1, resistance Ron, resistance R5, resistance R6, resistance R7, resistance R8, electric capacity C3, electric capacity C2, operational amplifier U2, operational amplifier U3, operational amplifier U4, operational amplifier U5, operational amplifier U8, multiplier U7, multiplier U9, divider U6With comparator U2, resistance RonWith amplifier U3After parallel connection with multiplier U7Connected with integrator；Proportional amplifier is connected with integrator；Proportional amplifier access divider U6；Comparator U2Access multiplier U9, multiplier U7With multiplier U9It is connected with each other.The utility model has simple in construction, low cost and other advantages.
Description
Technical field
The utility model belongs to electron and electrician technical field, is related to a kind of equivalent simulation circuit of Hewlett-Packard's memristor model.
Background technology
Memristor, full name memory resistor (Memristor).It is the circuit devcie for representing magnetic flux and charge relationship.Memristor
Dimension with resistance, but with resistance unlike, the resistance of memristor is determined by the electric charge for flowing through it.Therefore, measure is passed through
The resistance of memristor, it can know and flow through its quantity of electric charge, so as to play the role of to remember electric charge.2008, the research of Hewlett-Packard
Personnel make a nanometer memory resistor first, start memristor research boom.The appearance of nanometer memory resistor, is expected to realize non-volatile
Random access memory.Also, the integrated level of the random access memory based on memristor, power consumption, read or write speed will deposit at random than traditional
Reservoir is superior.The best way of artificial neural network cynapse is realized in addition, memristor is hardware.Due to the non-linear nature of memristor,
Chaos circuit can be produced, so as to also there are many applications in secret communication.
Memristor is the 4th kind of basic circuit elements in addition to resistance, electric capacity, inductance.It is first by the few Chinese bush cherry of Cai in 1971
Secondary proposition, Hewlett-Packard researcher exist in May, 2008《Nature》On report the realisation of memristor first, study
Achievement has shocked International Power electronics circle, and memristor has superior performance, nanoscale, low-power consumption etc., along with memristor is in electricity
Fundamental position in the theory of road, and its in application fields such as computerized information storage, mass data processing, artificial neural networks
Important prospect, the enthusiasm that people are studied memristor is greatly aroused.
The utility model replaces Hewlett-Packard's memristor a resistance in electronic circuit, so as to draw a kind of new memristor electricity
Road, due at present on the market also without the material object of Hewlett-Packard's memristor, so we design it is a kind of based on Hewlett-Packard's memristor model
Memristor equivalent simulation circuit, in order to preferably study the performance of memristor, we use basic circuit module structure one and favour
General memristor model has the memristor equivalent simulation circuit of same characteristic features.
Utility model content
The purpose of this utility model is to be directed to above mentioned problem existing for existing technology, there is provided a kind of Hewlett-Packard's memristor model
Equivalent simulation circuit, technical problem to be solved in the utility model are how by the design of circuit to simulate Hewlett-Packard's memristor mould
Type.
The purpose of this utility model can be realized by following technical proposal：A kind of equivalent simulation electricity of Hewlett-Packard's memristor model
Road, mainly comprising following component：Resistance R2, R3, R4, Hewlett-Packard memristor M, electric capacity C1, electric capacity C2And operational amplifier U1A；
Wherein Hewlett-Packard's memristor M and electric capacity C1Accessed after parallel connection between the in-phase input end and ground of operational amplifier, resistance R2With electric capacity C2
Operational amplifier U1A output end and in-phase input end, resistance R are parallel to after series connection4It is parallel to the output end of operational amplifier
With inverting input, the inverting input of operational amplifier passes through resistance R3Connection ground.
The RC connection in series-parallel frequency-selective network electricity routing resistances R included including Hewlett-Packard's memristor2, Hewlett-Packard memristor M, electricity
Hold C1And electric capacity C2Form, wherein resistance R2With electric capacity C2Series connection, Hewlett-Packard memristor M and electric capacity C1It is in parallel；Profound and negative feedbck electricity
Routing resistance R3, R4It is in series.
This analog circuit also includes resistance R1, resistance Ron, resistance R5, resistance R6, resistance R7, resistance R8, electric capacity C3, computing
Amplifier U2, operational amplifier U3, operational amplifier U4, operational amplifier U5, operational amplifier U8, multiplier U7, multiplier U9、
Divider U6With comparator U2, the operational amplifier U9, resistance R5, electric capacity C3Form an integrator, the resistance RonWith putting
Big device U3After parallel connection with multiplier U7Connected with integrator；The resistance R6, resistance R7, resistance R8With operational amplifier U5Form one
Individual proportional amplifier, the proportional amplifier are connected with the integrator；The proportional amplifier access divider U6；Comparator
U2Access multiplier U9, multiplier U7With multiplier U9It is connected with each other.
This analog circuit connection oscillograph XSC1, oscillograph XSC3 and oscillograph XSC4.
The advantages of the utility model and have the beneficial effect that：
The memristor simulation circuit structure is simple, implements more convenient, and cost is cheap, can be applied to many memristor circuits
In, when systematic parameter takes appropriate value, chaos phenomenon will be presented in system, and for the research and analysis of memory resistor, this is not to
The application for carrying out memristor provides preferable theory support.
Brief description of the drawings
Fig. 1 is the physical model and electrical symbol of Hewlett-Packard's memristor；
Fig. 2 is literary bridge memristor circuit；
Fig. 3 is the phasor that chaos phenomenon is presented in system (6)；
Fig. 4 is the schematic diagram of the memristor equivalent simulation circuit of Hewlett-Packard's memristor model in the utility model；
Fig. 5 is that the memristor in literary bridge memristor is replaced with to the circuit after Hewlett-Packard's memristor equivalent simulation circuit in the utility model
Schematic diagram.
Fig. 6 is that Hewlett-Packard memristor equivalent simulation circuit replaces the ripple that oscillograph XSC2 after memristor in literary bridge memristor circuit is shown
Shape figure；
Fig. 7 is the stable oscillogram that oscillograph XSC1 is presented；
Fig. 8 is the stable oscillogram that oscillograph XSC3 is presented；
Fig. 9 is the stable oscillogram that oscillograph XSC4 is presented.
Embodiment
It is specific embodiment of the utility model and with reference to accompanying drawing below, the technical solution of the utility model is made further
Description, but the utility model is not limited to these embodiments.
The circuit element that this programme is related to is as follows：That our amplifiers are selected is OP262GS, and what resistance was selected is common electricity
Resistance, its resistance is R2=R3=10k Ω, R4=35k Ω, titanium dioxide memristor M resistance Ron=100 Ω, Roff=10k Ω；Electricity
Hold C1=C2=100 μ F.Now the systematic parameter of corresponding Non-di-mensional equation is：ρ=100, k=1, α=β=1, K=4.5.
The main material of Hewlett-Packard's memristor is titanium dioxide, its physical model as shown in the left figure of accompanying drawing 1, wherein, D is dioxy
Change the total length of titanium film, w (t) is the width of doped layer.The right figure of accompanying drawing 1 is the electrical symbol of memristor, from the left figure of accompanying drawing 1
Total resistance of memristor is equal to doped portion resistance and undoped partial ohmic sum.
Wherein RONAnd ROFFTwo limiting values of the memristor as w=D and w=0 are represented respectively.W represents the inside shape of memristor
State variable.For the convenience of subsequent conditioning circuit design, circuit is converted into non-dimensional model by us, makes z=w/D, by w ∈ [0, D],
Understand z ∈ [0,1].Make ρ=ROFF/RONIt is a continuous parameter, then formula (1) can turn to：
RM(z)=RONr(z)
Wherein r (z) is a dimensionless function, and its mathematic(al) representation is as follows：
R (z)=z+ ρ (1-z) (2)
Boundary Moving speed between doped layer and non-impurity-doped layer is
Wherein, μvRepresent that ion constant .i (t) of situation of movement in uniform field is the electric current for flowing through memristor.Biolek is carried
The simulation doping face gone out reaches the window function f (z) such as following formula of memristor border ion situation of movement：
F (z)=1- (z-stp (- i))2 (4)
Here, as i ＞ 0, stp (i)=1, as i ＜ 0, stp (i)=0.
Single memristor element can not judge its substantive characteristics, so we have to be by itself and the strong circuit of some characteristics
With reference to the phenomenon showed by circuit reflects the substantive characteristics of memristor indirectly.Specific method is as follows：First by memristor
Some resistance in replacement circuit, a new memristor circuit is so just constituted, then this new memristor circuit is certain
Some peculiar phenomenons will be showed under the extraneous medium such as oscillograph under parameter, so as to just reach our indirect proof memristor sheets
The purpose of matter feature.
Based on above method, we choose literary bridge circuit as hookup, and memristor is replaced to one in literary bridge circuit
Individual resistance, so as to obtain a three-dimensional literary bridge memristor circuit, as shown in Figure 2, R in figure2、R3、R4It is resistance, M is that Hewlett-Packard is recalled
Resistance, C1、C2It is electric capacity, U1A is operational amplifier；The circuit includes the RC connection in series-parallel frequency-selective networks circuit including Hewlett-Packard's memristor, depth
Spend negative-feedback circuit and operational amplifier.
Three Balakrishnan bridge memristor chaos circuits mainly include following component：Resistance R2, R3, R4, Hewlett-Packard memristor M, electric capacity
C1, electric capacity C2And operational amplifier U1A；Wherein Hewlett-Packard's memristor M and electric capacity C1The same mutually defeated of operational amplifier is accessed after parallel connection
Enter between end and ground, resistance R2With electric capacity C2Operational amplifier U1A output end and in-phase input end, resistance are parallel to after series connection
R4The output end and inverting input of operational amplifier are parallel to, the inverting input of operational amplifier passes through resistance R3Connection ground.
The RC connection in series-parallel frequency-selective network electricity routing resistances R included including Hewlett-Packard's memristor2, Hewlett-Packard memristor M, electric capacity C1And electricity
Hold C2Form, wherein resistance R2With electric capacity C2Series connection, Hewlett-Packard memristor M and electric capacity C1It is in parallel；Profound and negative feedbck electricity routing resistance R3,
R4It is in series.
Can be with according to the Kirchoff s voltage current law of circuit and memristor internal state equation (3) and window function (4)
The state equation for obtaining three Balakrishnan bridge memristor chaos circuits is：
Wherein, v1, v2It is electric capacity C respectively1, C2The voltage at both ends, operational amplifier U1A positive and negative limiting voltage are respectively
VMWith-VMIf vo=VM/ K, K=1+R4/R3, then operational amplifier U1A output is：
For the convenience of calculating, (5) formula is converted into Dimensionless Form by us, if
Then (5) formula can abbreviation be following formula
Wherein h (x) is that the Dimensionless Form of operational amplifier U1A outputs is as follows：
Test result indicates that when Hewlett-Packard's memristor value is：
RON=100 Ω, ρ=ROFF/ RON=100, p=1, D=10nm, μv=10-10cm2s-1V-1；
Literary bridge circuit parameter is taken as：
R2=ROFF=10k Ω, C1=C2=100 μ F, R4/R3=3.5, v0=1V, t0=1s.
That is the systematic parameter of system (6) is ρ=100, k=1, p=1, and when α=β=1, K=4.5, system (6) will be presented
Go out chaos phenomenon, as shown in Figure 3.
The chaos phenomenon presented with reference to system, Hewlett-Packard's memristor equivalent simulation circuit that we design is as shown in Figure 4.
The connected mode of literary bridge memristor circuit is as shown in Figure 2：Wherein resistance R2With electric capacity C2Computing is parallel to after series connection
Amplifier OP262GS the first pin and the 3rd pin, titanium dioxide memristor M and electric capacity C1Operational amplifier is accessed after parallel connection
The 3rd pin and ground between, resistance R4It is parallel to the first pin and second pin of operational amplifier, the of operational amplifier
Two pins pass through resistance R3Connection ground.4th pin of operational amplifier connects -4.5V low-voltages, and the 7th of operational amplifier draws
Pin connects 4.5V high voltages.Other pins of operational amplifier are hanging.Accompanying drawing 3 is the matlab emulation that system produces chaos phenomenon
Phasor.
OrderThen
Make Rs=Roff, then have
The value limit in view of component and the debugging for facilitating actual circuit, here vz=5zvo∈ (0,5V),
It is the important component of whole Hewlett-Packard's memristor analog circuit below, the detailed derivation of each several part is as follows：
1st, component U9 parts (AD633 multipliers)：
When
vs- v ＞ 0, step (vs- v)=1
vs- v ＜ 0, step (vs- v)=0
2nd, component U7 (AD633 multipliers)
3rd, component U4 (integrator)
4th, component U5
5th, component U6 (AD734 dividers)
Fig. 6 is that Hewlett-Packard memristor equivalent simulation circuit replaces the ripple that oscillograph XSC2 after memristor in literary bridge memristor circuit is shown
Shape figure, system are presented chaos phenomenon, are consistent with figure three, illustrate that memristor equivalent simulation circuit designs successfully.
Specific embodiment described herein is only to the utility model spirit explanation for example.The utility model institute
Category those skilled in the art can make various modifications or supplement to described specific embodiment or using similar
Mode substitute, but without departing from spirit of the present utility model or surmount scope defined in appended claims.
Claims (2)
- A kind of 1. equivalent simulation circuit of Hewlett-Packard's memristor model, it is characterised in that：This analog circuit includes resistance R1, resistance Ron、 Resistance R5, resistance R6, resistance R7, resistance R8, electric capacity C3, electric capacity C2, operational amplifier U2, operational amplifier U3, operational amplifier U4, operational amplifier U5, operational amplifier U8, multiplier U7, multiplier U9, divider U6With comparator U2, the operation amplifier Device U9, resistance R5, electric capacity C3Form an integrator, the resistance RonWith amplifier U3After parallel connection with multiplier U7And integrator Series connection；The resistance R6, resistance R7, resistance R8With operational amplifier U5Form a proportional amplifier, the proportional amplifier with The integrator series connection；The proportional amplifier access divider U6；Comparator U2Access multiplier U9, multiplier U7With multiplication Device U9It is connected with each other.
- 2. a kind of equivalent simulation circuit of Hewlett-Packard's memristor model according to claim 1, it is characterised in that this analog circuit connects Meet oscillograph XSC1, oscillograph XSC3 and oscillograph XSC4.
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| CN201720486196.9U CN207051899U (en) | 2017-05-03 | 2017-05-03 | A kind of equivalent simulation circuit of Hewlett-Packard's memristor model |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107122555A (en) * | 2017-05-03 | 2017-09-01 | 湖北科技学院 | A kind of equivalent simulation circuit of Hewlett-Packard's memristor model |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107122555A (en) * | 2017-05-03 | 2017-09-01 | 湖北科技学院 | A kind of equivalent simulation circuit of Hewlett-Packard's memristor model |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180227 Termination date: 20200503 |