CN207016848U - A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall - Google Patents
A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall Download PDFInfo
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- CN207016848U CN207016848U CN201720651193.6U CN201720651193U CN207016848U CN 207016848 U CN207016848 U CN 207016848U CN 201720651193 U CN201720651193 U CN 201720651193U CN 207016848 U CN207016848 U CN 207016848U
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- Prior art keywords
- reduction cover
- negative electrode
- reduction
- silver
- cover base
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Abstract
The utility model proposes the magnetic control sputtering device that a kind of reduction cover inwall of production of polysilicon is silver-plated, including reduction cover base, vacuum pump group, rotating frame, cathode assembly and rotary drive mechanism, reduction cover base is used for the reduction cover for placing back-off, rotating frame is provided with above reduction cover base, the lower end of rotating frame is driven by rotary drive mechanism to be rotated, and argon gas input hole is additionally provided with rotary shaft；The cathode assembly includes some negative electrode parts, and negative electrode part is on the body side frame and top frame of the rotating frame, the negative electrode part includes magnet steel and silver-colored target, wherein the magnetic line of force runway in magnet steel magnetic field points to reduction cover inwall, in addition, negative electrode part is connected to power supply, and power supply is used to make to form negative voltage between anode and negative electrode；The vacuum pump group is used to vacuumize confined space.The utility model is silver-plated to reduction cover inwall progress, and silver layer is high in reduction cover inwall bond strength, and cost is low, can be applicable extensively in Chinese Enterprises.
Description
Technical field
It the utility model is related to a kind of silver-plated magnetic control sputtering device of the reduction cover inwall of production of polysilicon.
Background technology
The polysilicon of high-purity is the basic material of electronics and solar photovoltaic industry, and the production overwhelming majority of polysilicon is adopted
With improvement Siemens process, wherein reduction furnace is one of nucleus equipment of production of polysilicon, and polycrystalline silicon reducing furnace is mainly by bilayer
The bell-jar body of heater of structure, chassis and other appurtenances composition.Because the production of polysilicon is in 1300 degree of high temperature and strong acid
Under conditions of carry out, in order to reduce pollution of the equipment material to polysilicon product and resist thermal chemical damage, reduction furnace
Body of heater is generally Stainless steel 316 material and is made.
The production of polysilicon needs to consume a large amount of electric energy, and in general, power cost accounts for the 50 of polysilicon product totle drilling cost
To 75% or so, therefore, the key that energy-efficient reduction furnace is reduction or production cost is studied.Existing measure is to reduce
Cover inwall silver coating, but it is silver-plated to reduction cover inwall progress by existing technological means, and silver layer combines in reduction cover inwall
Low intensity, all silver layer is firmly combined with reduction cover inwall without a kind of good method so far, there are a kind of method in foreign countries
It is to be bonded silver plate up with the mode of explosive forming, but high cost, domestic enterprise can not receive.
Utility model content
In view of this, technical problem to be solved in the utility model, a kind of reduction of production of polysilicon is exactly proposed
The silver-plated magnetic control sputtering device of cover inwall, its is good in economic efficiency, and cost is low, and more important is pass through device of the present utility model
Silver-plated to reduction cover progress, silver layer can be bonded closely with reduction cover inwall.
In order to solve the above technical problems, the utility model is achieved using following technical scheme：
A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall, including reduction cover base, vavuum pump
Group, rotating frame, cathode assembly and rotary drive mechanism, the reduction cover base be used to placing back-off reduction cover to be formed it is close
Close space, be provided with rotating frame above reduction cover base, the rotating frame includes body side frame and top frame, under rotating frame
End is sealed by rotary drive mechanism driving rotation between the rotary shaft of rotary drive mechanism and reduction cover base, is revolved
Argon gas input hole is additionally provided with rotating shaft, argon gas is inputted for covering the confined space between reduction cover base to reduction；Described the moon
Pole component includes some negative electrode parts, and negative electrode part is located on the body side frame and top frame of the rotating frame, the negative electrode part bag
Magnet steel and silver-colored target are included, the wherein magnetic line of force runway in magnet steel magnetic field points to reduction cover inwall, in addition, negative electrode part is connected to electricity
Source, power supply are used to make to form negative voltage between anode and negative electrode；Vacuum pump group connection reduction on cover base is reduced is covered and gone back
Confined space between former cover base, for being vacuumized to confined space.
Preferably, the anode is reduction cover or the anode member set up in addition.
Preferably, it is provided with base support below the reduction cover base.
Preferably, the vacuum pump group includes primary pump, two stage pump and the triplex being sequentially connected, the primary pump
For molecular pump or diffusion pump, the two stage pump is Roots vaccum pump, and the triplex is mechanical vacuum pump, wherein, one-level
Pump is connected on reduction cover base.
Preferably, the power supply is arranged in the rotary shaft of rotary drive mechanism.
Compared with prior art, the utility model have the advantage that for：The reduction cover that the utility model is prepared
Reduction process volume power consumption in polysilicon production process can be reduced.The utility model is silver-plated to reduction cover inwall progress, and silver layer is also
Former cover inwall bond strength is high, in addition, cost is low, effect is good, can be applicable extensively in Chinese Enterprises.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model preferred embodiment；
Fig. 2 is Fig. 1 overlooking the structure diagram.
Embodiment
To allow those skilled in the art to become apparent from getting information about the utility model, below in conjunction with accompanying drawing, to this
Utility model is further described.
It is preferred embodiment of the present utility model as shown in Figure 1-2.
A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall, including reduction cover base 1, vavuum pump
Group 2, rotating frame 3, cathode assembly and rotary drive mechanism (not shown), reduction cover base 1 are used to place back-off
Reduction cover 6 forms confined space, and the top of reduction cover base 1 is provided with rotating frame 3, and rotating frame 3 includes body side frame 31 and top frame
Frame 32, the lower end of rotating frame 3 is driven by rotary drive mechanism to be rotated, and the rotary shaft 5 of rotary drive mechanism is covered with reduction
Sealed between base 1, argon gas input hole is additionally provided with rotary shaft 5, it is closed between 6 and reduction cover base 1 for being covered to reduction
Space inputs argon gas；Cathode assembly includes some negative electrode parts 41, and negative electrode part 41 is located at the body side frame 31 and top frame of rotating frame 3
On frame 32, negative electrode part 41 includes magnet steel and silver-colored target, and the wherein magnetic line of force runway in magnet steel magnetic field points to reduction 6 inwalls of cover, in addition,
Negative electrode part 41 is connected to power supply, and power supply is arranged in rotary shaft 51, and power supply is used to make to form negative voltage between anode and negative electrode；
Confined space of the vacuum pump group 2 on reduction cover base 1 between connection reduction cover 6 and reduction cover base 1, for confined space
Vacuumize.
In the present embodiment, reduction cover is used as anode, and reduces the lower section of cover base 1 and be provided with base support 11.Vacuum pump group 2 is wrapped
The primary pump 21 being sequentially connected, two stage pump 22 and triplex 23 are included, primary pump 21 is molecular pump or diffusion pump, and two stage pump 22 is
Roots vaccum pump, triplex 23 are mechanical vacuum pump, wherein, primary pump 21 is connected on reduction cover base 1.
It is as follows that the silver-plated specific operating procedure of reduction cover inwall is carried out using above-mentioned device：
Reduction cover back-off is formed into confined space on reduction cover base first；Vacuum pump group is then turned on to cover reduction
Confined space between reduction cover base vacuumizes, and vacuum is reached 1.0 × 10-3Pa；Reduction cover is covered with reduction afterwards
Confined space applying argon gas between base, make vacuum reach 1.0 × 10-1Pa~1.0 × 10-2Pa；Last startup power supply, makes
Negative electrode forms negative voltage with anode member, and argon gas forms glow discharge after being ionized, using principle of magnetron-sputtering by cathode assembly
Silver-colored target sputter to reduction cover inwall on formed 500 nanometer of -500 micron thickness silver layer.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Within the spirit and principle of utility model, any modification, equivalent substitution and improvements made etc., the utility model should be included in
Protection domain within.
Claims (5)
1. the silver-plated magnetic control sputtering device of the reduction cover inwall of a kind of production of polysilicon, it is characterised in that cover bottom including reduction
Seat, vacuum pump group, rotating frame, cathode assembly and rotary drive mechanism, the reduction cover base are used to place going back for back-off
Original cover forms confined space, and rotating frame is provided with above reduction cover base, and the rotating frame includes body side frame and top frame, rotation
Turn the lower end of framework and drive by the rotary drive mechanism to rotate, and the rotary shaft of rotary drive mechanism and reduction cover base it
Between seal, argon gas input hole is additionally provided with rotary shaft, for reduction cover and reduction cover base between confined space input argon
Gas；The cathode assembly includes some negative electrode parts, and negative electrode part is on the body side frame and top frame of the rotating frame, described
Negative electrode part includes magnet steel and silver-colored target, and wherein the magnetic line of force runway in magnet steel magnetic field points to reduction cover inwall, in addition, negative electrode part is distinguished
Power supply is connected with, power supply is used to make to form negative voltage between anode and negative electrode；Vacuum pump group connection on reduction cover base is gone back
Confined space between original cover and reduction cover base, for being vacuumized to confined space.
2. device according to claim 1, it is characterised in that the anode is reduction cover or the anode set up in addition
Part.
3. device according to claim 1, it is characterised in that be provided with base support below the reduction cover base.
4. device according to claim 1, it is characterised in that the vacuum pump group include be sequentially connected primary pump, two
Level pump and triplex, the primary pump are molecular pump or diffusion pump, and the two stage pump is Roots vaccum pump, and the triplex is
Mechanical vacuum pump, wherein, primary pump is connected on reduction cover base.
5. device according to claim 1, it is characterised in that the power supply is arranged on the rotary shaft of rotary drive mechanism
On.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720651193.6U CN207016848U (en) | 2017-06-06 | 2017-06-06 | A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720651193.6U CN207016848U (en) | 2017-06-06 | 2017-06-06 | A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207016848U true CN207016848U (en) | 2018-02-16 |
Family
ID=61485045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720651193.6U Withdrawn - After Issue CN207016848U (en) | 2017-06-06 | 2017-06-06 | A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207016848U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107151785A (en) * | 2017-06-06 | 2017-09-12 | 广州市新佑宏科技有限公司 | The silver-plated magnetic control sputtering device of reduction cover inwall and method of a kind of production of polysilicon |
| CN112663005A (en) * | 2020-12-16 | 2021-04-16 | 亚洲硅业(青海)股份有限公司 | Device and method for coating inner wall of polycrystalline silicon reduction furnace |
-
2017
- 2017-06-06 CN CN201720651193.6U patent/CN207016848U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107151785A (en) * | 2017-06-06 | 2017-09-12 | 广州市新佑宏科技有限公司 | The silver-plated magnetic control sputtering device of reduction cover inwall and method of a kind of production of polysilicon |
| CN107151785B (en) * | 2017-06-06 | 2019-01-22 | 广州市新佑宏科技有限公司 | A kind of magnetic control sputtering device and method that the reduction cover inner wall of production of polysilicon is silver-plated |
| CN112663005A (en) * | 2020-12-16 | 2021-04-16 | 亚洲硅业(青海)股份有限公司 | Device and method for coating inner wall of polycrystalline silicon reduction furnace |
| CN112663005B (en) * | 2020-12-16 | 2021-11-05 | 亚洲硅业(青海)股份有限公司 | Device and method for coating inner wall of polycrystalline silicon reduction furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180216 Effective date of abandoning: 20190122 |