CN107151785A - The silver-plated magnetic control sputtering device of reduction cover inwall and method of a kind of production of polysilicon - Google Patents
The silver-plated magnetic control sputtering device of reduction cover inwall and method of a kind of production of polysilicon Download PDFInfo
- Publication number
- CN107151785A CN107151785A CN201710416379.8A CN201710416379A CN107151785A CN 107151785 A CN107151785 A CN 107151785A CN 201710416379 A CN201710416379 A CN 201710416379A CN 107151785 A CN107151785 A CN 107151785A
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- CN
- China
- Prior art keywords
- reduction cover
- reduction
- silver
- negative electrode
- cover base
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Abstract
The present invention proposes the silver-plated magnetic control sputtering device of reduction cover inwall and method of a kind of production of polysilicon, device therein includes reduction cover base, vacuum pump group, rotating frame, cathode assembly and rotary drive mechanism, reduction cover base is used for the reduction cover for placing back-off, reduce and rotating frame is provided with above cover base, the lower end of rotating frame is driven by rotary drive mechanism to be rotated, and argon gas input hole is additionally provided with rotary shaft；The cathode assembly includes some negative electrode parts, and negative electrode part is on the body side frame and top frame of the rotating frame, the negative electrode part includes magnet steel and silver-colored target, wherein the magnetic line of force runway in magnet steel magnetic field points to reduction cover inwall, in addition, negative electrode part is connected to power supply, and power supply is used to make to form negative voltage between anode and negative electrode；The vacuum pump group is used to vacuumize confined space.The present invention is silver-plated to reduction cover inwall progress, and silver layer is high in reduction cover inwall bond strength, and cost is low, can be applicable extensively in Chinese Enterprises.
Description
Technical field
The present invention relates to a kind of silver-plated magnetic control sputtering device of the reduction cover inwall of production of polysilicon and method.
Background technology
The polysilicon of high-purity is the basic material of electronics and solar photovoltaic industry, and the production overwhelming majority of polysilicon is adopted
With improvement Siemens process, wherein reduction furnace is one of nucleus equipment of production of polysilicon, and polycrystalline silicon reducing furnace is mainly by bilayer
The bell-jar body of heater of structure, chassis and other appurtenances composition.Because the production of polysilicon is in 1300 degree of high temperature and strong acid
Under conditions of carry out, in order to reduce equipment material to the pollution of polysilicon product and resist thermal chemical damage, reduction furnace
Body of heater is generally Stainless steel 316 material and is made.
The production of polysilicon needs to consume a large amount of electric energy, in general, and power cost accounts for the 50 of polysilicon product totle drilling cost
To 75% or so, therefore, the key that energy-efficient reduction furnace is reduction or production cost is studied.Existing measure is in reduction
Cover inwall silver coating, but it is silver-plated to reduction cover inwall progress by existing technological means, and silver layer is combined in reduction cover inwall
Low intensity, is so far all firmly combined silver layer without a kind of good method, there are a kind of method in foreign countries with reduction cover inwall
It is that silver plate is fitted up with the mode of explosive forming, but high cost, domestic enterprise can not receive.
The content of the invention
In view of this, the technical problems to be solved by the invention, are exactly proposed in a kind of reduction cover of production of polysilicon
The silver-plated magnetic control sputtering device of wall and method, its is good in economic efficiency, and cost is low, more importantly, by the present invention device and
Method is silver-plated to reduction cover progress, and silver layer can fit closely with reduction cover inwall.
In order to solve the above technical problems, the present invention is achieved using following technical scheme：
A kind of silver-plated magnetic control sputtering device of reduction cover inwall of production of polysilicon, including reduction cover base, vavuum pump
Group, rotating frame, cathode assembly and rotary drive mechanism, the reduction that the reduction cover base is used to place back-off cover to form close
Close above space, reduction cover base and be provided with rotating frame, the rotating frame is included under body side frame and top frame, rotating frame
End drives rotation by the rotary drive mechanism, and is sealed between the rotary shaft of rotary drive mechanism and reduction cover base, rotation
Argon gas input hole is additionally provided with rotating shaft, argon gas is inputted for covering the confined space between reduction cover base to reduction；Described the moon
Pole component includes some negative electrode parts, and negative electrode part is on the body side frame and top frame of the rotating frame, the negative electrode part bag
Magnet steel and silver-colored target are included, the wherein magnetic line of force runway in magnet steel magnetic field points to reduction cover inwall, in addition, negative electrode part is connected to electricity
Source, power supply is used to make to form negative voltage between anode and negative electrode；Vacuum pump group connection reduction on cover base is reduced is covered with going back
Confined space between former cover base, for being vacuumized to confined space.
Preferably, the anode is reduction cover or the anode member set up in addition.
Preferably, it is provided with base support below the reduction cover base.
Preferably, the vacuum pump group includes primary pump, two stage pump and the triplex being sequentially connected, the primary pump
For molecular pump or diffusion pump, the two stage pump is Roots vaccum pump, and the triplex is mechanical vacuum pump, wherein, one-level
Pump is connected on reduction cover base.
Preferably, the power supply is arranged in the rotary shaft of rotary drive mechanism.
A kind of silver-plated method of reduction cover inwall of production of polysilicon, comprises the following steps：
(1) reduction cover back-off is formed into confined space on reduction cover base；
(2) vacuum pump group is opened to vacuumize the confined space between reduction cover and reduction cover base；
(3) the confined space applying argon gas between reduction cover base are covered to reduction；
(4) startup power supply, makes negative electrode and anode member formation negative voltage, and argon gas forms glow discharge after being ionized, utilizes magnetic
Control sputtering principle will form the silver of 500 nanometer of -500 micron thickness on the silver-colored target sputter on cathode assembly to reduction cover inwall
Layer.
Preferably, in the step (2), reduce true after the confined space between cover and reduction cover base is vacuumized
Reciprocal of duty cycle is 1.0 × 10-3Pa。
Preferably, it is true after the confined space applying argon gas between reduction cover and reduction cover base in the step (3)
Reciprocal of duty cycle is 1.0 × 10-1Pa~1.0 × 10-2Pa。
Compared with prior art, the device have the advantages that being：Present invention production and the reduction cover prepared can
Reduce and process volume power consumption is reduced in polysilicon production process.The present invention is silver-plated to reduction cover inwall progress, and silver layer is in reduction cover
Wall bond strength is high, in addition, cost is low, effect is good, can be applicable extensively in Chinese Enterprises.
Brief description of the drawings
Fig. 1 is the structural representation of the preferred embodiment of the present invention；
Fig. 2 is Fig. 1 overlooking the structure diagram.
Embodiment
To allow those skilled in the art to become apparent from getting information about the present invention, below in conjunction with accompanying drawing, to the present invention
It is further described.
It is the preferred embodiments of the present invention as shown in Figure 1-2.
A kind of silver-plated magnetic control sputtering device of reduction cover inwall of production of polysilicon, including reduction cover base 1, vavuum pump
Group 2, rotating frame 3, cathode assembly and rotary drive mechanism (not shown), reduction cover base 1 are used to place back-off
Reduction cover 6 forms confined space, and the top of reduction cover base 1 is provided with rotating frame 3, and rotating frame 3 includes body side frame 31 and top frame
Frame 32, the lower end of rotating frame 3 is driven by rotary drive mechanism to be rotated, and the rotary shaft 5 of rotary drive mechanism is covered with reduction
Sealed between base 1, argon gas input hole is additionally provided with rotary shaft 5, it is closed between 6 and reduction cover base 1 for being covered to reduction
Space inputs argon gas；Cathode assembly includes some negative electrode parts 41, and negative electrode part 41 is located at the body side frame 31 and top frame of rotating frame 3
On frame 32, negative electrode part 41 includes magnet steel and silver-colored target, and the wherein magnetic line of force runway in magnet steel magnetic field points to reduction 6 inwalls of cover, in addition,
Negative electrode part 41 is connected to power supply, and power supply is arranged in rotary shaft 51, and power supply is used to make to form negative voltage between anode and negative electrode；
Confined space of the vacuum pump group 2 on reduction cover base 1 between connection reduction cover 6 and reduction cover base 1, for confined space
Vacuumize.
In the present embodiment, reduction cover is as anode, and the lower section of reduction cover base 1 is provided with base support 11.Vacuum pump group 2 is wrapped
The primary pump 21 being sequentially connected, two stage pump 22 and triplex 23 are included, primary pump 21 is molecular pump or diffusion pump, and two stage pump 22 is
Roots vaccum pump, triplex 23 is mechanical vacuum pump, wherein, primary pump 21 is connected on reduction cover base 1.
The silver-plated method of reduction cover inwall is carried out using above-mentioned device, is comprised the following steps：
(1) reduction cover back-off is formed into confined space on reduction cover base；
(2) open vacuum pump group to vacuumize the confined space between reduction cover and reduction cover base, reach vacuum
1.0×10-3Pa；
(3) the confined space applying argon gas between reduction cover base are covered to reduction, vacuum is reached 1.0 × 10-1Pa~
1.0×10-2Pa；
(4) startup power supply, makes negative electrode and anode member formation negative voltage, and argon gas forms glow discharge after being ionized, utilizes magnetic
Control sputtering principle will form the silver of 500 nanometer of -500 micron thickness on the silver-colored target sputter on cathode assembly to reduction cover inwall
Layer.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (8)
1. the silver-plated magnetic control sputtering device of the reduction cover inwall of a kind of production of polysilicon, it is characterised in that including reduction cover bottom
Seat, vacuum pump group, rotating frame, cathode assembly and rotary drive mechanism, the reduction cover base are used to place going back for back-off
Original cover, which is formed, is provided with rotating frame above confined space, reduction cover base, the rotating frame includes body side frame and top frame, rotation
Turn the lower end of framework and drive by the rotary drive mechanism to rotate, and the rotary shaft of rotary drive mechanism and reduction cover base it
Between seal, be additionally provided with argon gas input hole in rotary shaft, argon inputted for covering the confined space between reduction cover base to reduction
Gas；The cathode assembly includes some negative electrode parts, and negative electrode part is on the body side frame and top frame of the rotating frame, described
Negative electrode part includes magnet steel and silver-colored target, and wherein the magnetic line of force runway in magnet steel magnetic field points to reduction cover inwall, in addition, negative electrode part is distinguished
Power supply is connected with, power supply is used to make to form negative voltage between anode and negative electrode；Vacuum pump group connection on reduction cover base is gone back
Confined space between original cover and reduction cover base, for being vacuumized to confined space.
2. device according to claim 1, it is characterised in that the anode is reduction cover or the anode set up in addition
Part.
3. device according to claim 1, it is characterised in that base support is provided with below the reduction cover base.
4. device according to claim 1, it is characterised in that primary pump that the vacuum pump group includes being sequentially connected, two
Level pump and triplex, the primary pump are molecular pump or diffusion pump, and the two stage pump is Roots vaccum pump, and the triplex is
Mechanical vacuum pump, wherein, primary pump is connected on reduction cover base.
5. device according to claim 1, it is characterised in that the power supply is arranged on the rotary shaft of rotary drive mechanism
On.
6. the silver-plated method of the reduction cover inwall of a kind of production of polysilicon, it is characterised in that comprise the following steps：
(1) reduction cover back-off is formed into confined space on reduction cover base；
(2) vacuum pump group is opened to vacuumize the confined space between reduction cover and reduction cover base；
(3) the confined space applying argon gas between reduction cover base are covered to reduction；
(4) startup power supply, makes negative electrode and anode member formation negative voltage, and argon gas is formed glow discharge after being ionized, splashed using magnetic control
Penetrate principle will form 500 nanometer of -500 micron thickness silver layer on the silver-colored target sputter on cathode assembly to reduction cover inwall.
7. method according to claim 6, it is characterised in that in the step (2), between reduction cover and reduction cover base
Confined space vacuumize after vacuum be 1.0 × 10-3Pa。
8. method according to claim 6, it is characterised in that in the step (3), between reduction cover and reduction cover base
Confined space applying argon gas after vacuum be 1.0 × 10-1Pa~1.0 × 10-2Pa。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710416379.8A CN107151785B (en) | 2017-06-06 | 2017-06-06 | A kind of magnetic control sputtering device and method that the reduction cover inner wall of production of polysilicon is silver-plated |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710416379.8A CN107151785B (en) | 2017-06-06 | 2017-06-06 | A kind of magnetic control sputtering device and method that the reduction cover inner wall of production of polysilicon is silver-plated |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107151785A true CN107151785A (en) | 2017-09-12 |
| CN107151785B CN107151785B (en) | 2019-01-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710416379.8A Active CN107151785B (en) | 2017-06-06 | 2017-06-06 | A kind of magnetic control sputtering device and method that the reduction cover inner wall of production of polysilicon is silver-plated |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112663005A (en) * | 2020-12-16 | 2021-04-16 | 亚洲硅业(青海)股份有限公司 | Device and method for coating inner wall of polycrystalline silicon reduction furnace |
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| CN1559896A (en) * | 2004-03-08 | 2005-01-05 | 成都蜀菱贸易发展有限公司 | Reduction furnace of hydrogen for polysilicon |
| CN106112269A (en) * | 2016-06-17 | 2016-11-16 | 吴起正 | A kind of laser removes the method and device of polycrystalline silicon reducing furnace bell jar oxide skin |
| CN207016848U (en) * | 2017-06-06 | 2018-02-16 | 广州市新佑宏科技有限公司 | A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall |
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2017
- 2017-06-06 CN CN201710416379.8A patent/CN107151785B/en active Active
Patent Citations (3)
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| CN1559896A (en) * | 2004-03-08 | 2005-01-05 | 成都蜀菱贸易发展有限公司 | Reduction furnace of hydrogen for polysilicon |
| CN106112269A (en) * | 2016-06-17 | 2016-11-16 | 吴起正 | A kind of laser removes the method and device of polycrystalline silicon reducing furnace bell jar oxide skin |
| CN207016848U (en) * | 2017-06-06 | 2018-02-16 | 广州市新佑宏科技有限公司 | A kind of production of polysilicon reduces the silver-plated magnetic control sputtering device of cover inwall |
Non-Patent Citations (2)
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| 亢若谷 等: "烟酸体系中烟酸含量对镀银过程及镀层性能的影响", 《太原理工大学学报》 * |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112663005A (en) * | 2020-12-16 | 2021-04-16 | 亚洲硅业(青海)股份有限公司 | Device and method for coating inner wall of polycrystalline silicon reduction furnace |
| CN112663005B (en) * | 2020-12-16 | 2021-11-05 | 亚洲硅业(青海)股份有限公司 | Device and method for coating inner wall of polycrystalline silicon reduction furnace |
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| Publication number | Publication date |
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| CN107151785B (en) | 2019-01-22 |
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