CN207009428U - A kind of dhield grid semiconductor subassembly - Google Patents
A kind of dhield grid semiconductor subassembly Download PDFInfo
- Publication number
- CN207009428U CN207009428U CN201720952780.9U CN201720952780U CN207009428U CN 207009428 U CN207009428 U CN 207009428U CN 201720952780 U CN201720952780 U CN 201720952780U CN 207009428 U CN207009428 U CN 207009428U
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- CN
- China
- Prior art keywords
- semiconductor subassembly
- buckle
- heat
- contact
- bindiny mechanism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a kind of dhield grid semiconductor subassembly,Including semiconductor subassembly body,The side of the semiconductor subassembly body is provided with heat-transfer device,One end of semiconductor subassembly body is connected with the first contact by the first bindiny mechanism,The other end of the semiconductor subassembly body is connected with the second contact by the second bindiny mechanism,The heat-transfer device includes thermally conductive sheet and heat abstractor,Thermally conductive sheet and heat abstractor are evenly distributed on the end sides of semiconductor subassembly body,The heat abstractor includes radiating groove,Radiating groove is opened in the side of semiconductor subassembly body,This dhield grid semiconductor subassembly,The semiconductor subassembly is protected by heat-transfer device,The semiconductor subassembly is avoided to cause hydraulic performance decline under high temperature action for a long time,Considerably increase the service life of the semiconductor subassembly,Contact is assembled by bindiny mechanism easy for removal and installation,It is facilitated to be safeguarded or changed.
Description
Technical field
Semiconductor subassembly technical field is the utility model is related to, specially a kind of dhield grid semiconductor subassembly.
Background technology
In the prior art：The patent for authorizing publication No. to be the U of CN 20621080 discloses a kind of dhield grid semiconductor group
Part, including：With the first conductivity-type and with the semi-conducting material on the first and second main surfaces, from the first electric conductivity class
Multiple mesa structures that the semi-conducting material of type is formed, the first mesa structure among the multiple mesa structure have first wide
Spend and the second mesa structure among the multiple mesa structure has the second width, wherein the second width is wide more than first
Degree, the dhield grid semiconductor formed from a part for the first mesa structure among the multiple mesa structure and first groove
Device, wherein the dhield grid semiconductor devices is included in the first screen between the first mesa structure and the second mesa structure
Cover grid structure, the first clamp structure in the second mesa structure among the multiple mesa structure；It is and neighbouring second
First shielding construction of face structure, it does not possess safeguard procedures, and semiconductor subassembly performance under long term high temperature effect can reduce, from
And its service life is influenceed, meanwhile, inconvenience is changed or safeguarded to its contact, it is impossible to meets use demand.
Utility model content
The technical problems to be solved in the utility model is to overcome the defects of existing, there is provided a kind of dhield grid semiconductor group
Part, there is protective capacities, considerably increase its service life, it is convenient that its contact is safeguarded or changed, and disclosure satisfy that use demand,
Effectively can solve the problems, such as in background technology.
To achieve the above object, the utility model provides following technical scheme：A kind of dhield grid semiconductor subassembly, including
Semiconductor subassembly body, the side of the semiconductor subassembly body are provided with heat-transfer device, and one end of semiconductor subassembly body passes through
First bindiny mechanism is connected with the first contact, and the other end of the semiconductor subassembly body is connected with by the second bindiny mechanism
Second contact.
As a kind of optimal technical scheme of the present utility model, the heat-transfer device includes thermally conductive sheet and heat abstractor, led
Backing and heat abstractor are evenly distributed on the end sides of semiconductor subassembly body.
As a kind of optimal technical scheme of the present utility model, the heat abstractor includes radiating groove, and radiating groove is opened
The side of semiconductor subassembly body is located at, the inner homogeneous of the radiating groove is provided with heat emission hole.
As a kind of optimal technical scheme of the present utility model, first bindiny mechanism includes the first buckle, the first card
Button is fixed on the end of the first contact, and the position of corresponding first buckle of the semiconductor subassembly body offers the first neck,
First buckle and the first neck snapping.
As a kind of optimal technical scheme of the present utility model, second bindiny mechanism includes the second buckle, the second card
Button is fixed on the end of the second contact, and the position of corresponding second buckle of the semiconductor subassembly body offers the second neck,
Second buckle and the second neck snapping.
Compared with prior art, the beneficial effects of the utility model are：This dhield grid semiconductor subassembly, is filled by heat conduction
Put and the semiconductor subassembly is protected, avoid the semiconductor subassembly from causing hydraulic performance decline under high temperature action for a long time, significantly
The service life of the semiconductor subassembly is added, contact is assembled by bindiny mechanism easy for removal and installation, side
Just it is safeguarded or changed.
Brief description of the drawings
Fig. 1 is the utility model structure diagram；
Fig. 2 is the utility model side structure schematic diagram.
In figure：1 semiconductor subassembly body, 2 thermally conductive sheets, 3 heat-transfer devices, 4 heat emission holes, 5 radiating grooves, 6 first contacts,
7 first buckles, 8 first necks, 9 heat abstractors, 10 first bindiny mechanisms, 11 second contacts, 12 second buckles, 13 second cards
Groove, 14 second bindiny mechanisms.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
Fig. 1-2 is referred to, the utility model provides a kind of technical scheme：A kind of dhield grid semiconductor subassembly, including half
Conductor assembly body 1, the side of semiconductor subassembly body 1 are provided with heat-transfer device 3, and one end of semiconductor subassembly body 1 passes through
One bindiny mechanism 10 is connected with the first contact 6, and the other end of semiconductor subassembly body 1 is connected with by the second bindiny mechanism 14
Second contact 11；
Heat-transfer device 3 includes thermally conductive sheet 2 and heat abstractor 9, and thermally conductive sheet 2 and heat abstractor 9 are evenly distributed on semiconductor
The end sides of component body 1, heat is discharged by thermally conductive sheet 2 caused by semiconductor subassembly body 1；
Heat abstractor 9 includes radiating groove 5, and radiating groove 5 is opened in the side of semiconductor subassembly body 1, and radiate groove 5
Inner homogeneous be provided with heat emission hole 4, heat caused by semiconductor subassembly body 1 is arranged by the heat emission hole 4 to radiate in groove 5
Go out, avoid the semiconductor subassembly from causing hydraulic performance decline under high temperature action for a long time, considerably increase making for the semiconductor subassembly
Use the life-span；
First bindiny mechanism 10 includes the first buckle 7, and the first buckle 7 is fixed on the end of the first contact 6, semiconductor group
The position of corresponding first buckle 7 of part body 1 offers the first neck 8, the first buckle 7 and the snapping of the first neck 8, the first contact
6 are assembled by the first buckle 7 with the clamping of the first neck 8 with semiconductor subassembly body 1, facilitate it to be safeguarded or more
Change；
Second bindiny mechanism 14 includes the second buckle 12, and the second buckle 12 is fixed on the end of the second contact 11, partly led
The position of corresponding second buckle 12 of body component body 1 offers the second neck 13, the second buckle 12 and the snapping of the second neck 13, the
Two contacts 11 are assembled by the second buckle 12 with the clamping of the second neck 13 with semiconductor subassembly body 1, facilitate it to enter
Row is safeguarded or changed.
When in use：Heat caused by semiconductor subassembly body 1 passes through the heat emission hole 4 in thermally conductive sheet 2 and radiating groove 5
To be discharged, the first contact 6 is assembled by the first buckle 7 with the clamping of the first neck 8 with semiconductor subassembly body 1,
Second contact 11 is assembled by the second buckle 12 with the clamping of the second neck 13 with semiconductor subassembly body 1.
The utility model is protected the semiconductor subassembly by heat-transfer device 3, avoids the semiconductor subassembly from existing for a long time
Cause hydraulic performance decline under high temperature action, the service life of the semiconductor subassembly is considerably increased, by easy for removal and installation
Bindiny mechanism contact is assembled, facilitate it to be safeguarded or changed.
While there has been shown and described that embodiment of the present utility model, for the ordinary skill in the art,
It is appreciated that these embodiments can be carried out with a variety of changes in the case where not departing from principle of the present utility model and spirit, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (5)
1. a kind of dhield grid semiconductor subassembly, including semiconductor subassembly body（1）, it is characterised in that：The semiconductor subassembly
Body（1）Side be provided with heat-transfer device（3）, semiconductor subassembly body（1）One end pass through the first bindiny mechanism（10）Connection
There is the first contact（6）, the semiconductor subassembly body（1）The other end pass through the second bindiny mechanism（14）Second is connected with to connect
Contact element（11）.
A kind of 2. dhield grid semiconductor subassembly according to claim 1, it is characterised in that：The heat-transfer device（3）Bag
Include thermally conductive sheet（2）And heat abstractor（9）, thermally conductive sheet（2）And heat abstractor（9）It is evenly distributed on semiconductor subassembly body（1）
End sides.
A kind of 3. dhield grid semiconductor subassembly according to claim 2, it is characterised in that：The heat abstractor（9）Bag
Include radiating groove（5）, radiate groove（5）It is opened in semiconductor subassembly body（1）Side, the radiating groove（5）Inside
It is uniformly provided with heat emission hole（4）.
A kind of 4. dhield grid semiconductor subassembly according to claim 1, it is characterised in that：First bindiny mechanism
（10）Including the first buckle（7）, the first buckle（7）It is fixed on the first contact（6）End, the semiconductor subassembly body
（1）Corresponding first buckle（7）Position offer the first neck（8）, the first buckle（7）With the first neck（8）Snapping.
A kind of 5. dhield grid semiconductor subassembly according to claim 1, it is characterised in that：Second bindiny mechanism
（14）Including the second buckle（12）, the second buckle（12）It is fixed on the second contact（11）End, the semiconductor subassembly sheet
Body（1）Corresponding second buckle（12）Position offer the second neck（13）, the second buckle（12）With the second neck（13）Snapping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720952780.9U CN207009428U (en) | 2017-08-02 | 2017-08-02 | A kind of dhield grid semiconductor subassembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720952780.9U CN207009428U (en) | 2017-08-02 | 2017-08-02 | A kind of dhield grid semiconductor subassembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207009428U true CN207009428U (en) | 2018-02-13 |
Family
ID=61456844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720952780.9U Expired - Fee Related CN207009428U (en) | 2017-08-02 | 2017-08-02 | A kind of dhield grid semiconductor subassembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207009428U (en) |
-
2017
- 2017-08-02 CN CN201720952780.9U patent/CN207009428U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180213 Termination date: 20190802 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |