CN206992139U - A kind of high light-emitting rate ultraviolet LED chip architecture - Google Patents
A kind of high light-emitting rate ultraviolet LED chip architecture Download PDFInfo
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- CN206992139U CN206992139U CN201720577107.1U CN201720577107U CN206992139U CN 206992139 U CN206992139 U CN 206992139U CN 201720577107 U CN201720577107 U CN 201720577107U CN 206992139 U CN206992139 U CN 206992139U
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Abstract
The utility model discloses a kind of high light-emitting rate ultraviolet LED chip architecture, including transparent insulation substrate and some LED wafers for being arranged in transparent insulation substrate, wherein, the LED wafer integrally trapezoidal body structure, and the LED wafer surface is concavo-convex mat surface；Printing opacity heat transfer Window layer is provided with the LED wafer periphery, and is conducted heat in the printing opacity and is reserved with a radiating cavity between Window layer and LED wafer.The utility model is reasonable in design, good heat dissipation effect, and light emission rate is high, and illumination effect is good.
Description
Technical field
It the utility model is related to a kind of LED wafer structure, more particularly to a kind of high light-emitting rate ultraviolet LED chip architecture.
Background technology
LED wafer is LED main raw material(s), and LED relies primarily on chip to light, and therefore, LED illumination effect and is gone out
Light rate is largely by the structures shape of LED wafer.Existing LED wafer is due to the limitation of structure design, and uses process
In caused high heat, cause that light emission rate is low, illumination effect is undesirable, influence daily life illumination.
Utility model content
For above-mentioned deficiency, the purpose of this utility model is to provide a kind of high light-emitting rate ultraviolet LED chip architecture, structure
Reasonable in design, good heat dissipation effect, light emission rate is high, and illumination effect is good.
The utility model is that technical scheme is used by reaching above-mentioned purpose：
A kind of high light-emitting rate ultraviolet LED chip architecture, it is characterised in that including transparent insulation substrate and be arranged at transparent
Some LED wafers on insulated substrate, wherein, the LED wafer integrally trapezoidal body structure, and the LED wafer surface is bumps
Shape mat surface；Printing opacity heat transfer Window layer is provided with the LED wafer periphery, and in printing opacity heat transfer Window layer and LED wafer
Between be reserved with a radiating cavity.
As further improvement of the utility model, printing opacity heat transfer window layer surface be provided with a high index of refraction without
Machine nano-particle glue-line, and it is filled with a fluorescence between the high index of refraction inorganic nano-particle glue-line and printing opacity heat transfer Window layer
Powder dielectric layer.
As further improvement of the utility model, with dissipating in the transparent insulation substrate and below LED wafer
Hot cavity bottom is embedded with a radiating copper sheet, and the radiating copper sheet upper surface contacts with LED wafer lower surface, lower surface with it is transparent absolutely
Edge substrate lower surface flushes.
As further improvement of the utility model, from top to bottom width tapers into the LED wafer, and the LED is brilliant
Four sides of piece are respectively inclined plane.
The beneficial effects of the utility model are：
(1) by setting printing opacity heat transfer Window layer and radiating cavity in the top of LED wafer, in the periphery shape of LED wafer
Into good heat dissipation channel, comprehensive thermal resistance is reduced, so as to contribute to the export of LED wafer core heat, is improved
Light emission rate, and the service life of low colour temperature LED can be substantially improved；Simultaneously as LED wafer surface have it is concavo-convex
Mat surface, making LED wafer surface roughening, main function is increase transmissivity, will meet that the light for being totally reflected law changes direction,
Greatly improve light extraction efficiency；
(2) by the setting of high index of refraction inorganic nano-particle glue-line, an optical lens are added equivalent to for LED wafer
Mirror, the light emission rate of LED wafer is further increased, meanwhile, prevent that fluorescent material dielectric layer is exposed, serve protection fluorescent material medium
The effect of layer；Simultaneously as the setting of printing opacity heat transfer Window layer, the concentration zones for making fluorescent material dielectric layer be generated heat away from LED wafer
Domain, the operating temperature of fluorescent material dielectric layer is greatly reduced, improves fluorescence conversion efficiency, and stability increase, solve original
Some light extractions are relatively low, and the phenomenon of color temperature shift；Meanwhile be advantageous to fluorescent material dielectric layer and further radiated, improve glimmering
The condition of work of light powder dielectric layer；
(3) by the setting of radiating copper sheet, the heat dispersion of illuminating source LED wafer is further improved, radiating copper sheet
Radiating effect can greatly improve power, so as to reach the lighting source of the low cost of the high brightness in ideal, and then improve light extraction
Rate and illumination effect.
Above-mentioned is the general introduction of utility model technical scheme, below in conjunction with accompanying drawing and embodiment, to the utility model
It is described further.
Brief description of the drawings
Fig. 1 is profile of the present utility model.
Embodiment
Further to illustrate that the utility model is to reach the technological means and effect that predetermined purpose taken, below in conjunction with
Accompanying drawing and preferred embodiment, specific embodiment of the present utility model is described in detail.
Fig. 1 is refer to, the utility model embodiment provides a kind of high light-emitting rate ultraviolet LED chip architecture, including transparent exhausted
Edge substrate 1 and some LED wafers 2 being arranged in transparent insulation substrate 1, wherein, the overall trapezoidal body knot of the LED wafer 2
Structure, and the surface of LED wafer 2 is concavo-convex mat surface 21, meanwhile, from top to bottom width tapers into the LED wafer 2, and should
Four sides of LED wafer 2 are respectively inclined plane；Printing opacity heat transfer Window layer 3 is provided with the periphery of LED wafer 2, and at this
Printing opacity conducts heat is reserved with a radiating cavity 4 between Window layer 3 and LED wafer 2.
In the present embodiment, printing opacity heat transfer Window layer 3 is made up of the solid-state material with printing opacity and heat conductivility, can be used
The transparent solid-state material layer of the high transmission rate such as sapphire or glassy layer and heatproof.By setting printing opacity to pass in the top of LED wafer 2
Thermal window layer 3 and radiating cavity 4, good heat dissipation channel is formd on the periphery of LED wafer 2, reduces comprehensive thermal resistance, so as to
Contribute to the export of the core heat of LED wafer 2, improve light emission rate, and low colour temperature LED can be substantially improved
Service life.Because the surface of LED wafer 2 has concavo-convex mat surface 21, make the surface roughening of LED wafer 2, main function is to increase
Add transmissivity, will meet that the light for being totally reflected law changes direction, greatly improve light extraction efficiency.
As further improvement of this embodiment, be provided with printing opacity heat transfer Window layer 3 surface a high index of refraction without
Machine nano-particle glue-line 5, and it is filled with one between the high index of refraction inorganic nano-particle glue-line 5 and printing opacity heat transfer Window layer 3
Fluorescent material dielectric layer 6.In the present embodiment, high index of refraction inorganic nano-particle is contained in high index of refraction inorganic nano-particle glue-line 5
The organosilicon of son, inorganic nano-particle is by the one or more in titanium dioxide, zirconium oxide, magnesia, aluminum oxide, silica
Composition.The setting of high index of refraction inorganic nano-particle glue-line 5, an optical lens is added equivalent to for LED wafer 2, enters one
Step improves the light emission rate of LED wafer 2, meanwhile, prevent that fluorescent material dielectric layer 6 is exposed, serve protection fluorescent material dielectric layer 6
Effect.Due to the setting of printing opacity heat transfer Window layer 3, the concentrated area for making fluorescent material dielectric layer 6 be generated heat away from LED wafer 2, make glimmering
The operating temperature of light powder dielectric layer 6 is greatly reduced, and improves fluorescence conversion efficiency, and stability increase, solve it is original go out
Light is relatively low, and the phenomenon of color temperature shift；Meanwhile be advantageous to fluorescent material dielectric layer 6 and further radiated, improve fluorescent material Jie
The condition of work of matter layer 6.
Meanwhile it is embedded with one with radiating cavity 4 bottom in the transparent insulation substrate 1 and below LED wafer 2 and dissipates
Hot copper sheet 7, the upper surface of radiating copper sheet 7 contact with the lower surface of LED wafer 2, and lower surface and the lower surface of transparent insulation substrate 1 are neat
It is flat.Pass through the heat dispersion of the setting of radiating copper sheet 7, further improvement illuminating source LED wafer, the radiating effect of radiating copper sheet 7
Fruit can greatly improve power, so as to reach the lighting source of the low cost of the high brightness in ideal, and then improve light emission rate and hair
Light effect.
It is described above, only it is preferred embodiment of the present utility model, not technical scope of the present utility model is made
Any restrictions, therefore identical with the utility model above-described embodiment or approximate technical characteristic is used, and obtained other structures,
Within the scope of protection of the utility model.
Claims (4)
1. a kind of high light-emitting rate ultraviolet LED chip architecture, it is characterised in that including transparent insulation substrate and be arranged at transparent exhausted
Some LED wafers on edge substrate, wherein, the LED wafer integrally trapezoidal body structure, and the LED wafer surface is concavo-convex
Mat surface；Be provided with printing opacity heat transfer Window layer in the LED wafer periphery, and the printing opacity heat transfer Window layer and LED wafer it
Between be reserved with a radiating cavity.
2. high light-emitting rate ultraviolet LED chip architecture according to claim 1, it is characterised in that in printing opacity heat transfer window
Mouth layer surface is provided with a high index of refraction inorganic nano-particle glue-line, and in the high index of refraction inorganic nano-particle glue-line and printing opacity
A fluorescent material dielectric layer is filled between heat transfer Window layer.
3. high light-emitting rate ultraviolet LED chip architecture according to claim 1 or 2, it is characterised in that in the transparent insulation
A radiating copper sheet is embedded with substrate and with radiating cavity bottom below LED wafer, the radiating copper sheet upper surface is brilliant with LED
Piece lower surface contacts, and lower surface flushes with transparent insulation substrate lower surface.
4. high light-emitting rate ultraviolet LED chip architecture according to claim 1, it is characterised in that the LED wafer is by up to
Lower width tapers into, and four sides of the LED wafer are respectively inclined plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720577107.1U CN206992139U (en) | 2017-05-23 | 2017-05-23 | A kind of high light-emitting rate ultraviolet LED chip architecture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720577107.1U CN206992139U (en) | 2017-05-23 | 2017-05-23 | A kind of high light-emitting rate ultraviolet LED chip architecture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206992139U true CN206992139U (en) | 2018-02-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720577107.1U Active CN206992139U (en) | 2017-05-23 | 2017-05-23 | A kind of high light-emitting rate ultraviolet LED chip architecture |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108413264A (en) * | 2018-04-20 | 2018-08-17 | 江苏鸿利国泽光电科技有限公司 | A kind of high light-emitting rate ultraviolet LED lighting device |
-
2017
- 2017-05-23 CN CN201720577107.1U patent/CN206992139U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108413264A (en) * | 2018-04-20 | 2018-08-17 | 江苏鸿利国泽光电科技有限公司 | A kind of high light-emitting rate ultraviolet LED lighting device |
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