CN206921982U - The glass insulator level Hermetic Package structure of microwave device - Google Patents
The glass insulator level Hermetic Package structure of microwave device Download PDFInfo
- Publication number
- CN206921982U CN206921982U CN201720769857.9U CN201720769857U CN206921982U CN 206921982 U CN206921982 U CN 206921982U CN 201720769857 U CN201720769857 U CN 201720769857U CN 206921982 U CN206921982 U CN 206921982U
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- CN
- China
- Prior art keywords
- glass insulator
- microwave device
- cavity wall
- hermetic package
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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Abstract
The utility model discloses a kind of glass insulator level Hermetic Package structure of microwave device, including gold-plated cavity wall and glass insulator, glass insulator is welded between gold-plated cavity wall, positioned at center, gold-plated cavity wall top, which is closed at top, is provided with solder bath, and solder mask structure is provided with the top of the solder bath.Compared with the existing, the utility model prevents tin solder to be stretched to cavity wall, greatly reduces technology controlling and process and production operation difficulty, improves the sealing of the glass insulator level Hermetic Package structure of microwave device after welding.
Description
Technical field
It the utility model is related to small microwave devices field, the glass insulator hermetic seal of more particularly to a kind of microwave device
Assembling structure.
Background technology
Most of cavity of small microwave device is aluminium alloy, and surface is mostly gold-plated processing, and the radio frequency of microwave device is defeated
Entering output end and feed or control port is sintered with glass insulator, to realize the level Hermetic Package of microwave device, glass
The combination of glass insulator and cavity is typically using scolding tin sintering assembly method.
During existing insulator assemble welding mode, the structure of insulator pilot hole used has the following disadvantages：1. by
There is higher and faster solubility in the tin solder of melting in gold, so stretch speed ratio of the tin solder in gold-plated surface
Comparatively fast.It is that the scolding tin that can not prevent solder bath is stretched to external wall, so as to influence for the microwave device that surface wants gold-plated
Product appearance, reduce product quality.If 2. to realize the gold-plated insulator welding of appearance and solder is without stretching, technology controlling and process
It is extremely difficult, soldering tin amount, weld interval, welding temperature curve, welding equipment etc., it is necessary to input equipment and human cost compared with
It is high.
Utility model content
The purpose of this utility model is that the glass insulator level Hermetic Package structure for providing a kind of microwave device, the device
Structure prevents tin solder to be stretched to cavity wall, technology controlling and process and production operation difficulty is greatly reduced, after improving welding
The sealing of the glass insulator level Hermetic Package structure of microwave device.
Technical scheme is：A kind of glass insulator level Hermetic Package structure of microwave device, including gold-plated cavity wall and glass
Insulator, glass insulator are welded between gold-plated cavity wall, and positioned at center, gold-plated cavity wall top, which is closed at top, to be set
Solder bath is equipped with, solder mask structure is provided with the top of the solder bath.
Preferably, the cross-section structure of the solder mask structure is L stepped ramp types, top is with gold-plated cavity wall top in same water
Plane.
Preferably, the height H of the solder mask structure vertical direction is 0.03-0.07mm, the width W of horizontal direction is
0.25-0.35mm。
Preferably, the vertical plane of the solder mask structure and horizontal plane are non-gilding.
Preferably, the non-gilding is aluminium alloy face.
The utility model has advantages below relative to traditional air-tight structure：
Easily tin solder can be prevented to be stretched to cavity wall, greatly reduce technology controlling and process and production operation difficulty, welded
Tin amount, weld interval, welding temperature curve, welding equipment can be in an acceptability limits.More easy is that can use temperature
Warm table is controlled to realize insulator assemble welding, substantially reduces the difficulty of the soldering tin amount of manual control, improves the effect of production assembling
Rate.
Brief description of the drawings
Fig. 1 is the utility model overall structure diagram；
Fig. 2 Fig. 1 solder mask structure enlarged diagrams；
All diagrams are profile in the present invention.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
As shown in Figure 1-2, the glass insulator level Hermetic Package structure of a kind of microwave device, including gold-plated cavity wall 2 and glass
Glass insulator 3, glass insulator 3 is welded between gold-plated cavity wall 2, and positioned at center, top is closed on the gold-plated top of cavity wall 2
Solder bath 1 is provided with portion, the top of solder bath 1 is provided with solder mask structure 4.
Solder mask structure 4 is L stepped ramp types, and top is with the gold-plated top of cavity wall 2 in same level.
The height H of the vertical direction of solder mask structure 4 is 0.05mm, and the width W of horizontal direction is 0.3mm.
The vertical plane of solder mask structure 4 and horizontal plane are non-gilding, the non-preferred aluminium alloy face of gilding.
The utility model is due to the setting of the solder mask structure 4 in aluminium alloy face, because aluminium alloy and tin solder can not be formed
Wetting face, it is impossible to form welding, therefore, solder mask structure 4 prevents tin solder to be stretched to cavity wall, greatly reduces technique control
System and production operation difficulty, improve the sealing of the glass insulator level Hermetic Package structure of microwave device after welding.
Claims (5)
1. a kind of glass insulator level Hermetic Package structure of microwave device, including gold-plated cavity wall and glass insulator, glass are exhausted
Edge is welded between gold-plated cavity wall, and positioned at center, gold-plated cavity wall top, which is closed at top, is provided with solder bath, its
It is characterised by：Solder mask structure is provided with the top of the solder bath.
2. the glass insulator level Hermetic Package structure of microwave device according to claim 1, it is characterised in that：The welding resistance
The cross-section structure of structure is L stepped ramp types, and top is with gold-plated cavity wall top in same level.
3. the glass insulator level Hermetic Package structure of microwave device according to claim 2, it is characterised in that：The welding resistance
The height H in structural vertical direction is 0.03-0.07mm, and the width W of horizontal direction is 0.25-0.35mm.
4. according to the glass insulator level Hermetic Package structure of any described microwave device of Claims 2 or 3, it is characterised in that：
The vertical plane of the solder mask structure and horizontal plane are non-gilding.
5. the glass insulator level Hermetic Package structure of microwave device according to claim 1, it is characterised in that：The non-plated
Golden face is aluminium alloy face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720769857.9U CN206921982U (en) | 2017-06-29 | 2017-06-29 | The glass insulator level Hermetic Package structure of microwave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720769857.9U CN206921982U (en) | 2017-06-29 | 2017-06-29 | The glass insulator level Hermetic Package structure of microwave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206921982U true CN206921982U (en) | 2018-01-23 |
Family
ID=61323203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720769857.9U Withdrawn - After Issue CN206921982U (en) | 2017-06-29 | 2017-06-29 | The glass insulator level Hermetic Package structure of microwave device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206921982U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134606A (en) * | 2017-06-29 | 2017-09-05 | 成都玖信科技有限公司 | The glass insulator level Hermetic Package structure and welding method of microwave device |
| CN110011002A (en) * | 2019-04-18 | 2019-07-12 | 中国电子科技集团公司第二十九研究所 | A kind of Self Matching formula ultra-wideband microwave insulator |
-
2017
- 2017-06-29 CN CN201720769857.9U patent/CN206921982U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134606A (en) * | 2017-06-29 | 2017-09-05 | 成都玖信科技有限公司 | The glass insulator level Hermetic Package structure and welding method of microwave device |
| CN107134606B (en) * | 2017-06-29 | 2022-07-08 | 成都玖信科技有限公司 | Glass insulator airtight packaging structure of microwave device and welding method |
| CN110011002A (en) * | 2019-04-18 | 2019-07-12 | 中国电子科技集团公司第二十九研究所 | A kind of Self Matching formula ultra-wideband microwave insulator |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180123 Effective date of abandoning: 20220708 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20180123 Effective date of abandoning: 20220708 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |