CN206920633U - A kind of near-infrared is to middle ultra-wideband anti-reflection film - Google Patents
A kind of near-infrared is to middle ultra-wideband anti-reflection film Download PDFInfo
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- CN206920633U CN206920633U CN201720849078.XU CN201720849078U CN206920633U CN 206920633 U CN206920633 U CN 206920633U CN 201720849078 U CN201720849078 U CN 201720849078U CN 206920633 U CN206920633 U CN 206920633U
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Abstract
The utility model discloses a kind of near-infrared to middle ultra-wideband anti-reflection film, including ZnSe basalises connected in order, the first YF3Layer and the first composite bed, or including the first composite bed connected in order, the first YF3Layer, ZnSe basalises, the 2nd YF3Layer and the second composite bed；First composite bed and the second composite bed include the zinc compound layer and MgF alternateed2Layer, wherein, zinc compound layer is ZnS layers or ZnSe layer；Zinc compound layer in first composite bed and the second composite bed has 25 layers.The utility model near-infrared has the advantages such as Stress match between low wide waveband, reflectivity, transmissivity, film layer, film adhesion are good, temperature tolerance is good, rub resistance is strong, water-tolerant to middle ultra-wideband anti-reflection film, and prepares simple, easy to operate.
Description
Technical field
A kind of near-infrared be the utility model is related to middle ultra-wideband anti-reflection film, belong to anti-reflection film field.
Background technology
Anti-reflection film is also known as antireflective coating, is deposited on optical element surface, and to reduce surface reflection, increase optical system passes through
The optical thin film of rate, it can improve contrast by the scattering light in reduction system.
Existing anti-reflection film has that wave transparent section is narrow, reflectivity is high, film inter-laminar stress mismatch, film adhesion difference etc. lack
Fall into.
Utility model content
In order to solve in the prior art, wave transparent section is narrow, reflectivity is high, film inter-laminar stress mismatch, film adhesion difference etc. lack
Fall into, the utility model provides a kind of near-infrared to middle ultra-wideband anti-reflection film.
In order to solve the above technical problems, technical scheme is as follows used by the utility model：
A kind of near-infrared is to middle ultra-wideband anti-reflection film, including ZnSe basalises connected in order, the first YF3Layer and first
Composite bed, or including the first composite bed connected in order, the first YF3Layer, ZnSe basalises, the 2nd YF3Layer and the second composite bed；
First composite bed and the second composite bed include the zinc compound layer and MgF alternateed2Layer, wherein, zinc compound layer is ZnS
Layer or ZnSe layer；Zinc compound layer in first composite bed and the second composite bed has 2-5 layers.
Above-mentioned near-infrared has that wide waveband, reflectivity be low, Stress match, film layer between film layer to middle ultra-wideband anti-reflection film
The advantages such as adhesive force is good.
In order to further improve antireflective effect, near-infrared to middle ultra-wideband anti-reflection film, including connected in order first is multiple
Close layer, the first YF3Layer, ZnSe basalises, the 2nd YF3Layer and the second composite bed.Namely the two-sided all compound increasing in ZnSe basalises
Permeable membrane.
The wave transparent section of the application anti-reflection film is 1-5 microns, is preferably, wave transparent section is 1-3 microns.This area, wave band are often opened up
Wide 0.1 micron of technology being all very difficult to.
In order to further improve near-infrared to the adhesive force of middle ultra-wideband anti-reflection film, while wave transparent section is widened, zinc impregnation is closed
Nitride layer is ZnS layers.ZnS costs are low, performance is good.
In order to improve near-infrared to the anti-reflection performance of middle ultra-wideband anti-reflection film, near-infrared to middle ultra-wideband anti-reflection film
Outermost layer is MgF2Layer.
From ZnSe basalis to YF3The direction of layer is direction from inside to outside.
In order to improve near-infrared to the anti-reflection performance and adhesive force of middle ultra-wideband anti-reflection film, zinc compound layer and YF3Layer
It is adjacent.Be in contact, fit for two layers mentioned by the adjacent finger of the application, between there is no other materials.
While in order to ensure near-infrared to middle ultra-wideband anti-reflection film antireflective effect, cost is reduced, near-infrared is red in
Outer broadband anti-reflection film includes the first MgF connected in order2The one, the first ZnS layers one of layer, the first MgF2The two, the first ZnS layers two of layer, the
One MgF2The three, the first ZnS layers three of layer, the first YF3Layer, ZnSe basalises, the 2nd YF3Layer, the 2nd ZnS layers one, the 2nd MgF2Layer
First, the 2nd ZnS layers two, the 2nd MgF2The two, the 2nd ZnS layers three of layer and the 2nd MgF2Layer three.
The above-mentioned any total number of plies being simultaneously alternately deposited for using three kinds of materials in basalis is 7 layer, in 1-3 micron wavebands
One side average reflectance up to being less than or equal to 1%, the mean transmissivity of double-sided coating (the two-sided tunic of plating identical 7) is more than etc.
In 98%.Wherein YF3The material selection of layer is very crucial, directly affects the adhesive force and scraping and wiping resistance performance of gained film layer.
In order to take into account near-infrared to the anti-reflection performance and adhesive force of middle ultra-wideband anti-reflection film, the 2nd ZnS layers one, second
The thickness of the ZnS layers three of ZnS layers two and the 2nd is sequentially reduced, the thickness of the first ZnS layers one, the first ZnS layers two and the first ZnS layers three
It is incremented by successively；2nd MgF2The one, the 2nd MgF of layer2The two and the 2nd MgF of layer2The thickness of layer three is incremented by successively, the first MgF2Layer one, the
One MgF2The two and the first MgF of layer2The thickness of layer three is sequentially reduced.
In order to take into account near-infrared to the anti-reflection performance and adhesive force of middle ultra-wideband anti-reflection film, from the 2nd YF3Layer is to second
MgF2Layer three, the physical thickness of each layer be followed successively by 23 ± 2nm, 75 ± 2nm, 30 ± 2nm, 27 ± 2nm, 37 ± 2nm, 20 ± 2nm,
233±2nm；From the first YF3Layer is to the first MgF2Layer one, the physical thickness of each layer be followed successively by 23 ± 2nm, 75 ± 2nm, 30 ±
2nm、27±2nm、37±2nm、20±2nm、233±2nm.The thickness of basalis is 3-20mm.
Above-mentioned near-infrared to middle ultra-wideband anti-reflection film preparation method, using the coating machine containing ion gun in vacuum shape
Plated film is carried out under state, starting vacuum is (1.5 ± 0.1) × 10-3Pa, temperature are 130 ± 5 DEG C；The accelerating potential of ion gun is
250 ± 10V, plate voltage are 400 ± 10V, and line is 60 ± 5mA.
Before evaporation, 10min bombardment is carried out to substrate, it is therefore an objective to cleaning substrate, improve coefficient of concentration, strengthen the attached of film layer
Put forth effort.During film deposition, changed using momentum of the Kaufman ion source based on ion pair deposited particles, improve deposition
The kinetic energy of particle and the mobility of deposited particles, increase gather density, improve structural intergrity and Stress match, so as to improve
The performance and usage time of film layer.
The application preferably uses the southern type coating machine of light 900 (for existing commercial equipment), and it is mainly by film-thickness monitoring, ion
Source, vacuum chamber and vapo(u)rization system composition, film thickness monitoring system are divided into light-operated and brilliant control two parts, wherein brilliant control employs import
MDC360 controllers, it is to be changed using quartz crystal frequency of oscillation to measure film quality thickness, light is controlled using light-operated method
Thickness is learned, while using brilliant control method control evaporation rate；Ion gun is examined using Chinese Academy of Sciences's Beijing Institute For Space Studies development
The graceful ion gun of husband, by rationally controlling ion energy, the consistency of deposition film can be improved, improves optically and mechanically performance；
Vacuum chamber cooperates to obtain the vacuum of requirement of experiment by mechanical pump and diffusion pumping system, and vacuum is entered with thermocouple needle
Row measurement.
In order to improve the accuracy of control, while ensure the anti-reflection performance and mechanical property of anti-reflection film, YF3 evaporation rate
For 0.6 ± 0.01nm/s, the evaporation rate of zinc compound layer is 0.25 ± 0.01nm/s, MgF2 evaporation rate position 0.7 ±
0.01nm/s。
It is above-mentioned to give a kind of surface in zinc selenide and be deposited from near-infrared to the preparation method of middle ultra-wideband anti-reflection film,
Can solve the Stress match and adhesive force problem of film layer while possessing antireflective effect.
The NM technology of the utility model is with reference to prior art.
The utility model near-infrared has between low wide waveband, reflectivity, transmissivity, film layer to middle ultra-wideband anti-reflection film
The advantage such as Stress match, film adhesion is good, temperature tolerance is good, rub resistance is strong, water-tolerant, and prepare simple, easy to operate.
Brief description of the drawings
Fig. 1 is the one side reflectivity of the gained anti-reflection film of embodiment 1；
Fig. 2 is the two-sided transmitance of the gained anti-reflection film of embodiment 1；
Fig. 3 is the structural representation of the gained anti-reflection film of embodiment 1；
In figure, 1 the oneth MgF2One, 2 the oneth ZnS layers one of layer, 3 the oneth MgF2Two, 4 the oneth ZnS layers two of layer, 5 the oneth MgF2Layer
3rd, 7 the oneth ZnS layers three, 7 the oneth YF3Layer, 8ZnSe basalises, 9 the 2nd YF3Layer, 10 the 2nd ZnS layers one, 11 the 2nd MgF2Layer
First, 12 the 2nd ZnS layers two, 13 the 2nd MgF2Two, 14 the 2nd ZnS layers three of layer, 15 the 2nd MgF2Layer three.
Embodiment
In order to more fully understand the utility model, content of the present utility model is furtherd elucidate with reference to embodiment, but
Content of the present utility model is not limited solely to the following examples.
Used film forming equipment is in each example：The southern type coating machine of light 900, it is mainly by film-thickness monitoring, ion gun, vacuum chamber
Formed with vapo(u)rization system, film thickness monitoring system is divided into light-operated and brilliant control two parts, wherein brilliant control employs the MDC360 controls of import
Instrument processed, it is to be changed using quartz crystal frequency of oscillation to measure film quality thickness, optical thickness is controlled using light-operated method, together
Shi Caiyong crystalline substance controls method controls evaporation rate；Ion gun uses the Kaufman ion of Chinese Academy of Sciences's Beijing Institute For Space Studies development
Source, by rationally controlling ion energy, the consistency of deposition film can be improved, improves optically and mechanically performance；Vacuum chamber leans on
Mechanical pump and diffusion pumping system cooperate to obtain the vacuum of requirement of experiment, and vacuum is measured with thermocouple needle.
Embodiment 1
Near-infrared is to middle ultra-wideband anti-reflection film, including the first MgF connected in order2The one, the first ZnS layers one, first of layer
MgF2The two, the first ZnS layers two of layer, the first MgF2The three, the first ZnS layers three of layer, the first YF3Layer, ZnSe basalises, the 2nd YF3Layer,
2nd ZnS layers one, the 2nd MgF2The one, the 2nd ZnS layers two of layer, the 2nd MgF2The two, the 2nd ZnS layers three of layer and the 2nd MgF2Layer three；From
2nd YF3Layer is to the 2nd MgF2Layer three, the physical thickness of each layer be followed successively by 23nm, 75nm, 30nm, 27nm, 37nm, 20nm,
233nm；From the first YF3Layer is to the first MgF2Layer one, the physical thickness of each layer be followed successively by 23nm, 75nm, 30nm, 27nm, 37nm,
20nm、233nm；The thickness of basalis is 4mm.
Above-mentioned near-infrared to middle ultra-wideband anti-reflection film preparation method, using the coating machine containing ion gun in vacuum shape
Plated film is carried out under state, starting vacuum is 1.5 × 10-3Pa, temperature are 130 DEG C；The accelerating potential of ion gun is 250V, and anode is electric
Press as 400V, line 60mA.Before each raw material evaporation, 10min bombardment is carried out to substrate, YF3 evaporation rate is 0.6nm/
S, the evaporation rate of zinc compound layer is 0.25nm/s, MgF2 evaporation rate position 0.7nm/s.
NM other technologies are with reference to prior art in embodiment.
It is above-mentioned to use three kinds of materials to replace the total number of plies being deposited in any one side of basalis as 7 layers, as illustrated, using
The PHOTO RT spectrophotometers of Byelorussia are tested to the one side reflectivity of film and two-sided transmitance, micro- in 1-3
The one side average reflectance of VHF band is up to being less than or equal to 1%, and (the two-sided tunic of plating identical 7, two-sided film layer are in double-sided coating
Symmetrical structure) mean transmissivity be more than or equal to 98%.
Embodiment 2
Near-infrared is to middle ultra-wideband anti-reflection film, including the first MgF connected in order2The one, the first ZnS layers one, first of layer
MgF2The two, the first ZnS layers two of layer, the first MgF2The three, the first ZnS layers three of layer, the first MgF2The four, the first ZnS layers four of layer, the first YF3
Layer, ZnSe basalises, the 2nd YF3Layer, the 2nd ZnS layers one, the 2nd MgF2The one, the 2nd ZnS layers two of layer, the 2nd MgF2Layer two, second
ZnS layers three, the 2nd MgF2The three, the 2nd ZnS layers four of layer and the 2nd MgF2Layer four；From the 2nd YF3Layer is to the 2nd MgF2Layer four, each layer
Physical thickness be followed successively by 23nm, 75nm, 30nm, 27nm, 37nm, 20nm, 233nm, 18nm and 250nm；From the first YF3Layer arrives
First MgF2Layer one, the physical thickness of each layer be followed successively by 23nm, 75nm, 30nm, 27nm, 37nm, 20nm, 233nm, 18nm and
250nm；The thickness of basalis is 8mm.
Preparation method is with embodiment 1, and the above-mentioned total number of plies for using three kinds of materials alternating evaporations is 9 layer, in 1-5 micron wavebands
One side average reflectance up to be less than or equal to 1%, (the two-sided tunic of plating identical 8, two-sided film layer are in symmetrical junction to double-sided coating
Structure) mean transmissivity be more than or equal to 98%.
Following performance test is carried out to film obtained by above-mentioned each example, test reference standard is that GJB2485-95 optical films are general
Specification, concrete outcome are as follows：
(1) high/low temperature is tested：Under Packing Condition, plated film print is put into high/low temperature experimental box (this high/low temperature experimental box
Heating and cooling rate be respectively less than 2 DEG C/min), 2h is kept in the low temperature of (one 62 ± 2) DEG C respectively, in (70 ± 2) DEG C
2h is kept in high temperature, phenomena such as film layer is without peeling, foaming, crackle, demoulding.
(2) wear-resisting intensity experiment：2 layers of drying defatted gauze are wrapped up in outside rubber friction head, are kept under 4.9N pressure along same
One track rubs to film layer, comes and goes 40 times, film layer is without scratch equivalent damage.
(3) adhesive force is tested：With a width of 2cm, peel strength I>2.94N/cm adhesive tape is cemented in film surface, by glue
After the rapid pull-up of vertical direction with paper from the edge of part towards surface, film layer nothing comes off, not damaged.
(4) soak test：Sample is completely immersed in distilled water or deionized water, film layer occurs without new after 96 hours
The defects of peeling, stripping, crackle, foaming.
Claims (9)
1. a kind of near-infrared is to middle ultra-wideband anti-reflection film, it is characterised in that：Including ZnSe basalises connected in order, the first YF3
Layer and the first composite bed, or near-infrared include the first composite bed connected in order, the first YF to middle ultra-wideband anti-reflection film3Layer,
ZnSe basalises, the 2nd YF3Layer and the second composite bed；The zinc impregnation that first composite bed and the second composite bed include alternateing is closed
Nitride layer and MgF2Layer, wherein, zinc compound layer is ZnS layers or ZnSe layer；Zinc impregnation in first composite bed and the second composite bed is closed
Nitride layer has 2-5 layers.
2. near-infrared as claimed in claim 1 is to middle ultra-wideband anti-reflection film, it is characterised in that：Including connected in order first
Composite bed, the first YF3Layer, ZnSe basalises, the 2nd YF3Layer and the second composite bed.
3. near-infrared as claimed in claim 1 or 2 is to middle ultra-wideband anti-reflection film, it is characterised in that：Wave transparent section is that 1-3 is micro-
Rice.
4. near-infrared as claimed in claim 1 or 2 is to middle ultra-wideband anti-reflection film, it is characterised in that：Zinc compound layer is ZnS
Layer；The thickness of basalis is 3-20mm.
5. near-infrared as claimed in claim 1 or 2 is to middle ultra-wideband anti-reflection film, it is characterised in that：Near-infrared is infrared in
The outermost layer of broadband anti-reflection film is MgF2Layer.
6. near-infrared as claimed in claim 1 or 2 is to middle ultra-wideband anti-reflection film, it is characterised in that：Zinc compound layer and YF3
Layer is adjacent.
7. near-infrared as claimed in claim 6 is to middle ultra-wideband anti-reflection film, it is characterised in that：Including connected in order first
MgF2The one, the first ZnS layers one of layer, the first MgF2The two, the first ZnS layers two of layer, the first MgF2The three, the first ZnS layers three of layer, the first YF3
Layer, ZnSe basalises, the 2nd YF3Layer, the 2nd ZnS layers one, the 2nd MgF2The one, the 2nd ZnS layers two of layer, the 2nd MgF2Layer two, second
The MgF of ZnS layers three and the 2nd2Layer three.
8. near-infrared as claimed in claim 7 is to middle ultra-wideband anti-reflection film, it is characterised in that：2nd ZnS layers one, second
The thickness of the ZnS layers three of ZnS layers two and the 2nd is sequentially reduced, the thickness of the first ZnS layers one, the first ZnS layers two and the first ZnS layers three
It is incremented by successively；2nd MgF2The one, the 2nd MgF of layer2The two and the 2nd MgF of layer2The thickness of layer three is incremented by successively, the first MgF2Layer one, the
One MgF2The two and the first MgF of layer2The thickness of layer three is sequentially reduced.
9. near-infrared as claimed in claim 7 is to middle ultra-wideband anti-reflection film, it is characterised in that：From the 2nd YF3Layer is to second
MgF2Layer three, the physical thickness of each layer be followed successively by 23 ± 2nm, 75 ± 2nm, 30 ± 2nm, 27 ± 2nm, 37 ± 2nm, 20 ± 2nm,
233±2nm；From the first YF3Layer is to the first MgF2Layer one, the physical thickness of each layer be followed successively by 23 ± 2nm, 75 ± 2nm, 30 ±
2nm、27±2nm、37±2nm、20±2nm、233±2nm。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107179569A (en) * | 2017-07-13 | 2017-09-19 | 南京波长光电科技股份有限公司 | A kind of near-infrared is to middle ultra-wideband anti-reflection film and preparation method thereof |
| CN114488361A (en) * | 2022-01-21 | 2022-05-13 | 南京波长光电科技股份有限公司 | Ultralow-stress 8-12 mu m infrared broadband antireflection film and preparation method thereof |
-
2017
- 2017-07-13 CN CN201720849078.XU patent/CN206920633U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107179569A (en) * | 2017-07-13 | 2017-09-19 | 南京波长光电科技股份有限公司 | A kind of near-infrared is to middle ultra-wideband anti-reflection film and preparation method thereof |
| CN114488361A (en) * | 2022-01-21 | 2022-05-13 | 南京波长光电科技股份有限公司 | Ultralow-stress 8-12 mu m infrared broadband antireflection film and preparation method thereof |
| CN114488361B (en) * | 2022-01-21 | 2024-02-09 | 南京波长光电科技股份有限公司 | Ultra-low stress 8-12 mu m infrared broadband antireflection film and preparation method thereof |
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Address after: 211123 No.18, boguang Road, Hushu industrial concentration area, Jiangning District, Nanjing City, Jiangsu Province Patentee after: NANJING WAVELENGTH OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: WAVELAB SCIENTIFIC NANJING Co.,Ltd. Address before: 211123 No.18, boguang Road, Hushu industrial concentration area, Jiangning District, Nanjing City, Jiangsu Province Patentee before: NANJING WAVELENGTH OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: NANJING GUANGYAN SOFTWARE SYSTEM Co.,Ltd. |