CN114488361A - Ultralow-stress 8-12 mu m infrared broadband antireflection film and preparation method thereof - Google Patents
Ultralow-stress 8-12 mu m infrared broadband antireflection film and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 238000002834 transmittance Methods 0.000 claims abstract description 9
- 238000002310 reflectometry Methods 0.000 claims abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 7
- 239000010980 sapphire Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000007888 film coating Substances 0.000 claims description 4
- 238000009501 film coating Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000000869 ion-assisted deposition Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 12
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052791 calcium Inorganic materials 0.000 abstract description 5
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- 230000003595 spectral effect Effects 0.000 abstract description 3
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- 238000005299 abrasion Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
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Abstract
The invention discloses an ultra-low stress 8-12 mu m infrared broadband anti-reflection film and a preparation method thereof, the ultra-low stress 8-12 mu m infrared broadband anti-reflection film has a film system structure of SUB/aHbLcHdLeH/air, wherein SUB represents a sapphire substrate, air represents air, H represents a ZnSe layer, L represents a Yb-A layer, and the Yb-A layer is YF3Mixed film layer with YbF with 1 wt% -8 wt% of calcium doping and volume ratio of 1:1-5: 1; a-e represent the coefficients of the quarter-reference wavelength optical thickness of each layer. According to the ultra-low stress 8-12 mu m infrared broadband antireflection film and the preparation method thereof, the antireflection film layer with small stress change is obtained by matching mixed film materials, the surface type of the finished film layer is maintained at the original surface type of the substrate, so that the film has good film firmness, the problems of large stress between film layers and small film adhesion are effectively solved, the obtained film layer has good spectral performance and good mechanical stability, the average single-surface reflectivity of 8-12 mu m is not more than 0.3%, the average double-surface transmittance is not less than 99.3%, and the film stress is close to 0.
Description
Technical Field
The invention relates to an ultra-low stress 8-12 mu m infrared broadband antireflection film and a preparation method thereof, belonging to the technical field of infrared broadband antireflection films.
Background
Optical films are used in a wide variety of applications, but almost all films have different levels of stress, especially in the infrared range due to their relatively thick layers and poor strength. The existence of stress can directly cause the phenomena of film falling, color cracking and the like, and seriously affect the performance of the product in all aspects. The nature and the magnitude of the film stress are closely related to a substrate, a film material, a deposition process, deposition conditions and the like; for many years, electron beam evaporation and various influencing factors have been reported in many documents, but no relevant report of stress relief through matching of thin film materials exists at present.
Disclosure of Invention
The invention provides an ultra-low stress 8-12 mu m infrared broadband antireflection film and a preparation method thereof, wherein an antireflection film layer with small stress change is obtained by mixing the proportion and selection of film materials and matching the film materials among the film layers, so that the surface shape of the finished film layer is maintained at the original surface shape of a substrate, thereby obtaining better film firmness, effectively solving the problems of large stress among the film layers and small adhesive force of the film layer, and ensuring that the obtained film layer has both good spectral performance and good mechanical stability.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
an ultra-low stress infrared broadband antireflection film with 8-12 μm thickness has a film system structure of SUB/aHbLcHdLeH/air, wherein SUB represents a sapphire substrate, air represents air, H represents a ZnSe layer, L represents a Yb-A layer, and the Yb-A layer is YF3Mixed film layer with YbF volume ratio of 1:1-5:1 and calcium-doped 1-8 wt%; a-e represent the coefficients of the quarter-wavelength reference optical thickness of each layer.
The ZnSe of the high-refractive-index material in the infrared band has the light transmission range of 0.5-15 mu m, extremely low scattering loss and high thermal shock bearing capacity. According to the method, ZnSe and Yb-A are respectively used as high-refractive-index and low-refractive-index thin film materials, and film systems are optimally designed and compared through different schemes to generate a film system structure SUB/aHbLcHdLeH/A, so that the problem of stress between the films is effectively solved, the compactness of the films is improved, the films are firmer, and the service life is longer.
YF3And YbF3The two film materials are commonly used low-refractive-index film materials in infrared bands, and the inventor finds that the two film materials are greatly influenced by the process conditions during deposition, and generally show tensile stress and moderately calcium-doped YbF3May exhibit compressive stress; and YbF3In contrast, YF3The film has lower refractive index, and is easy to obtain lower single-side reflectivity in film system design; using YF3And the mixed film layer and the ZnSe layer which are mixed with 1-8 wt% of calcium and have the volume ratio of YbF of 1:1-5:1 are arranged alternately according to a specific thickness to obtain the 8-12 mu m infrared broadband antireflection film with the film stress (integral comprehensive stress) close to 0 Gpa.
The numerical values of a-e are related to the reference wavelength lambda, preferably, the value of a is 1.00-1.60, the value of b is 1.70-2.30, the value of c is 13.00-13.60, the value of d is 12.70-13.30, and the value of e is 2.55-3.15. Further preferably, the value of a is 1.30-1.34, the value of b is 1.98-2.02, the value of c is 13.28-13.32, the value of d is 12.98-13.02, and the value of e is 2.83-2.87. More preferably, a is 1.32, b is 2.00, c is 13.30, d is 13.00, and e is 2.85.
In order to better take optical property and mechanical property of the antireflection film into consideration, aH is a first ZnSe layer, bL is a first Yb-A layer, cH is a second ZnSe layer, dL is a second Yb-A layer, and eH is a third ZnSe layer; the physical thickness of the first ZnSe layer is 400 +/-50 nm, the physical thickness of the first Yb-A layer is 140 +/-20 nm, the physical thickness of the second ZnSe layer is 600 +/-50 nm, the physical thickness of the second Yb-A layer is 1200 +/-100 nm, and the physical thickness of the third ZnSe layer is 200 +/-30 nm.
The film system structure is air/eHdLcHbLaH/SUB/aHbLcHdLeH/air. The average single-side reflectivity of the film system structure with the thickness of 8-12 mu m is not more than 0.3 percent, the average double-side transmission is not less than 99.3 percent, and the film stress is calculated to be close to 0 through the surface type.
The application adopts a formula of Newton's ring method
Calculating the film stress, and when the film surface diameter ratio is more than 50 times larger than the thickness, calculating the curvature radius r of the interference seasoning to derive the film stress sigma, wherein ts is not the substrate thickness, tfAs the film thickness, Es is the Young's modulus of elasticity of the substrate, and v is the Poisson's ratio of the substrate.
The ultra-low stress infrared broadband antireflection film with 8-12 mu m adopts ion-assisted deposition in the film coating process; before film coating, baking the sapphire substrate at 90-100 ℃ for 0.5-1 h; the initial vacuum degree during film forming is (0.8-1.2) × 10-3Pa, and the ion source parameters are set as follows: the accelerating voltage is 200V, the screen electrode voltage is 450 +/-50V, and the beam current is 40 +/-20 mA.
In order to further improve the density of the deposited film and improve the optical and mechanical properties, ZnSe adopts electron beam evaporation in a copper crucible, and the evaporation rate is controlled to be 0.8 +/-0.1 nm/s. The Yb-A layer is evaporated by adopting an electron beam of a graphite crucible, and the evaporation rate is controlled to be 0.8 +/-0.1 nm/s. When the Yb-A layer is evaporated, firstly YF3Mixing with YbF doped with 1-8 wt% of calcium according to the volume ratio of 1:1-5:1, and then adopting a graphite crucible to perform electron beam evaporation.
By effectively selecting the coating material, reasonably controlling various process parameters and coating a plurality of films on the substrate, the film index meets the transmittance requirement of 8-12 mu m, and meanwhile, the residual stress of the film is close to zero, thereby effectively solving the defects of insecurity and the like of the film layer in the wave band.
The technology not mentioned in the present invention is referred to the prior art.
According to the ultra-low stress 8-12 mu m infrared broadband antireflection film and the preparation method thereof, the antireflection film layer with small stress change is obtained by matching mixed film materials, the surface type of the finished film layer is maintained at the original surface type of the substrate, so that the film has good film firmness, the problems of large stress between film layers and small film adhesion are effectively solved, the obtained film layer has good spectral performance and good mechanical stability, the average single-surface reflectivity of 8-12 mu m is not more than 0.3%, the average double-surface transmittance is not less than 99.3%, and the film stress is close to 0 Gpa.
Drawings
FIG. 1 is a schematic diagram of a structure of an ultra-low stress 8-12 μm infrared broadband antireflection film in example 1 of the present invention;
FIG. 2 is a theoretical design single-sided reflection curve diagram of an ultra-low stress 8-12 μm infrared broadband antireflection film in example 1 of the present invention;
FIG. 3 is a single-sided reflection plot of an ultra-low stress 8-12 μm infrared broadband antireflection film in example 1 of the present invention;
FIG. 4 is a graph showing the double-sided transmission of the ultra-low stress 8-12 μm infrared broadband antireflection film in example 1;
FIG. 5 is a graph showing the comparison between the change of the front and rear surfaces before and after the single-sided coating on the substrate in example 1 of the present invention (a is before the coating and b is after the coating);
Detailed Description
In order to better understand the present invention, the following examples are further provided to illustrate the present invention, but the present invention is not limited to the following examples.
Example 1
As shown in figure 1, the ultra-low stress infrared broadband antireflection film with 8-12 μm has a film system structure of air/eHdLcLaH/SUB/aHbLcHdLeH/air, wherein SUB represents a sapphire substrate, air represents air, H represents a ZnSe layer, L represents a Yb-A layer, and the Yb-A layer is YF3Mixed film layer with YbF3 with 3 wt% of calcium doping and the volume ratio of 2: 1; a-e represents the coefficient of the optical thickness of the quarter reference wavelength of each layer, the value of a is 1.32, the value of b is 2.00, the value of c is 13.30, the value of d is 13.00, and the value of e is 2.85; aH is a first ZnSe layer, bL is a first Yb-A layer, cH is a second ZnSe layer, dL is a second Yb-A layer, and eH is a third ZnSe layer; the physical thickness of the first ZnSe layer is 400nm, the physical thickness of the first Yb-A layer is 140nm, the physical thickness of the second ZnSe layer is 600nm, the physical thickness of the second Yb-A layer is 1200nm, and the physical thickness of the third ZnSe layer is 200 nm;
film forming equipment: the film coating machine of the type 1100 Vietnam light is adopted, the crystal control adopts an INFICON IC6 controller, and the quality and the thickness of the film are measured by using the oscillation frequency change of a quartz crystal. The ion source adopts a Kaufman ion source developed in the nine chapters of Chinese Keke. The vacuum chamber obtains the vacuum degree required by the membrane system by the mutual matching of a mechanical pump, a diffusion pump and a deep cooling unit system, and the vacuum degree is measured by a thermocouple meter.
Before film plating, the sapphire substrate is subjected to ultrasonic cleaning to remove residual dirt on the surface, and is baked for 0.5h at the baking temperature of 100 ℃, and the initial vacuum degree is about 1.0 x 10-3Pa during film deposition. The ion source parameters are set as: the accelerating voltage is 200V, the screen electrode voltage is 450V, and the beam current is about 40 mA. In the process of film deposition, a Kaufman ion source is used for assisting deposition, the concentration density is increased, and the structural integrity is improved, so that the performance and the service time of the film are improved, the optical thickness is controlled by adopting a light control method, and the evaporation rate is controlled by adopting a crystal control method. ZnSe adopts electron beam evaporation in a copper crucible, and the evaporation rate is controlled at 0.8 nm/s; Yb-A is evaporated by adopting an electron beam in a graphite crucible, and the evaporation rate is controlled to be 0.8 nm/s.
And (3) testing results:
and (3) testing optical performance: the single-sided reflectivity and the double-sided transmittance of the film are tested by adopting an infrared spectrophotometer Spectrum100, and the obtained Spectrum curve meets the design requirement: as shown in FIGS. 3-4, the average single-sided reflectance of 8-12 μm is less than 0.3%, and the average double-sided transmittance is greater than 99.3%, and the film stress is calculated to be-0.04 Gpa by the surface type shown in FIG. 5 according to the Newton's ring method formula.
Film layer Performance testing
In order to ensure the reliability of the optical element, the following environmental tests are carried out on the broadband antireflection film sample according to the requirements of the general specification of the GJB2485-95 optical film layer:
(1) abrasion resistance test: wrapping 2 layers of dry absorbent gauze outside the rubber friction head, and rubbing the film layer along the same track under the pressure of 9.8N for 1000 times without damage such as scratches.
(2) Salt spray test: and (3) continuously spraying for 12h for two cycles at the ambient temperature of 35 ℃ and the NaCl concentration of 5%, wherein the total time is 24h, and the film layer is not abnormal.
(3) Soaking test: the sample was completely immersed in distilled or deionized water, and the film layer was not abnormal after 96 hours.
(4) High and low temperature tests: keeping the temperature at minus 65 ℃ for 2 hours, quickly switching from minus 65 ℃ to 80 ℃ for 2 hours, keeping the temperature from 80 ℃ to minus 65 ℃ for 2 hours, and circulating for six times without abnormity of the film layer.
(5) Adhesion force experiment: the film layer is firmly adhered to the surface of the film layer by using a 3M adhesive tape with the width of 1cm, and after the adhesive tape paper is quickly pulled up from the edge of the part to the vertical direction of the surface, the film layer is not fallen or damaged, and the process is repeated for 30 times, so that the film layer is still not fallen or damaged.
Comparative example 1
Example 1 was followed except that the Yb-A layer in example 1 was replaced with YF 3. The average single-side reflectivity of 8-12 mu m is 0.28%, the average double-side transmittance is 99.22%, the film stress is calculated to be 21.57Gpa by surface type, and the film stress is large, so that the film stripping phenomenon is easily caused.
Comparative example 2
Example 1 was followed except that the Yb-A layer in example 1 was replaced with YbF 3. The average single-side reflectivity of 8-12 mu m is 0.7%, the average double-side transmittance is 98.5%, the film stress is calculated to be 13.83Gpa by surface type, the film stress and the film firmness are slightly improved, but the film system index is poor.
Comparative example 3
Example 1 was followed except that the Yb-A layer in example 1 was replaced with YbF3 doped with calcium in an amount of 3 wt%. The average single-sided reflectance of 8 to 12 μm was 0.5% for an average single-sided reflectance of 8 to 12 μm, and the average double-sided transmittance was 98.8%, and the film stress was calculated to be-2.3 GPa by surface type, and the film stress and the film firmness were also slightly improved, but the film had disadvantages compared with example 1.
Claims (9)
1. An ultra-low stress infrared broadband antireflection film with 8-12 mu m is characterized in that: the film system structure is SUB/aHbLcHdLeH/air, wherein SUB represents a sapphire substrate, air represents air, H represents a ZnSe layer, L represents a Yb-A layer, and the Yb-A layer is YF3The volume ratio of YbF to calcium-doped 1 wt% -8 wt% is 1:1-5:1 of mixed film layer; a-e represent the coefficients of the quarter-wavelength reference optical thickness of each layer.
2. The ultra-low stress 8-12 μm infrared broadband antireflection film of claim 1, wherein: the value of a is 1.00-1.60, the value of b is 1.70-2.30, the value of c is 13.00-13.60, the value of d is 12.70-13.30, and the value of e is 2.55-3.15.
3. The ultra-low stress 8-12 μm infrared broadband antireflection film of claim 2, wherein: the values of a are 1.30-1.34, b are 1.98-2.02, c are 13.28-13.32, d are 12.98-13.02, and e are 2.83-2.87.
4. The ultra low stress 8-12 μm infrared broadband antireflection film of any of claims 1 to 3, wherein: aH is a first ZnSe layer, bL is a first Yb-A layer, cH is a second ZnSe layer, dL is a second Yb-A layer, and eH is a third ZnSe layer; the physical thickness of the first ZnSe layer is 400 +/-50 nm, the physical thickness of the first Yb-A layer is 140 +/-20 nm, the physical thickness of the second ZnSe layer is 600 +/-50 nm, the physical thickness of the second Yb-A layer is 1200 +/-100 nm, and the physical thickness of the third ZnSe layer is 200 +/-30 nm.
5. The ultra low stress 8-12 μm infrared broadband antireflection film of any of claims 1 to 3, wherein: the structure of the film system is air/eHdLcHbLaH/SUB/aHbLcHdLeH/air.
6. The ultra low stress 8-12 μm infrared broadband antireflection film of any of claims 1 to 3, wherein: the average single-side reflectivity of 8-12 mu m is not more than 0.3%, the average double-side transmittance is not less than 99.3%, and the film stress is 0.
7. The method for preparing an ultra-low stress 8-12 μm infrared broadband antireflection film according to any of claims 1 to 6, characterized in that: ion-assisted deposition is adopted in the coating process; before film coating, the film is coatedBaking the sapphire substrate at 90-100 ℃ for 0.5-1 h; the initial vacuum degree during film formation is (0.8-1.2) × 10-3Pa, ion source parameters set to: the accelerating voltage is 200V, the screen electrode voltage is 450 +/-50V, and the beam current is 40 +/-20 mA.
8. The method of claim 7, wherein: ZnSe adopts electron beam evaporation in a copper crucible, and the evaporation rate is controlled to be 0.8 +/-0.1 nm/s.
9. The method of claim 7 or 8, wherein: the Yb-A is evaporated by adopting an electron beam of a graphite crucible, and the evaporation rate is controlled to be 0.8 +/-0.1 nm/s.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116589200A (en) * | 2023-04-07 | 2023-08-15 | 中山吉联光电科技有限公司 | Salt spray resistant composite film system with chalcogenide glass as substrate and preparation method thereof |
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| JPH07331412A (en) * | 1994-06-10 | 1995-12-19 | Sumitomo Electric Ind Ltd | Optical parts for infrared ray and their production |
| CN204331075U (en) * | 2014-12-24 | 2015-05-13 | 南京波长光电科技股份有限公司 | A kind of infrared glass GASIR1 anti-reflection film |
| CN206920633U (en) * | 2017-07-13 | 2018-01-23 | 南京波长光电科技股份有限公司 | A kind of near-infrared is to middle ultra-wideband anti-reflection film |
| CN111164463A (en) * | 2017-07-31 | 2020-05-15 | 康宁股份有限公司 | Hard antireflective coatings |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07331412A (en) * | 1994-06-10 | 1995-12-19 | Sumitomo Electric Ind Ltd | Optical parts for infrared ray and their production |
| CN204331075U (en) * | 2014-12-24 | 2015-05-13 | 南京波长光电科技股份有限公司 | A kind of infrared glass GASIR1 anti-reflection film |
| CN206920633U (en) * | 2017-07-13 | 2018-01-23 | 南京波长光电科技股份有限公司 | A kind of near-infrared is to middle ultra-wideband anti-reflection film |
| CN111164463A (en) * | 2017-07-31 | 2020-05-15 | 康宁股份有限公司 | Hard antireflective coatings |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116589200A (en) * | 2023-04-07 | 2023-08-15 | 中山吉联光电科技有限公司 | Salt spray resistant composite film system with chalcogenide glass as substrate and preparation method thereof |
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