CN206907786U - A kind of LED chip of anti-metal migration - Google Patents
A kind of LED chip of anti-metal migration Download PDFInfo
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- CN206907786U CN206907786U CN201720723480.3U CN201720723480U CN206907786U CN 206907786 U CN206907786 U CN 206907786U CN 201720723480 U CN201720723480 U CN 201720723480U CN 206907786 U CN206907786 U CN 206907786U
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Abstract
A kind of LED chip of anti-metal migration provided by the utility model; electrode adhesion layer is formed in electrode surface; and in LED chip surface depositing insulating layer; the insulating barrier is formed by the electrode adhesion layer and the first electrode and the second electrode and connected; protect the first electrode and the second electrode; reduce steam to penetrate into, extend metal migration distance, increase LED chip service life.
Description
Technical field
It the utility model is related to a kind of LED technology field, more particularly to a kind of LED chip of anti-metal migration.
Background technology
LED（Light Emitting Diode, light emitting diode）It is the shape that released energy when one kind utilizes Carrier recombination
Into luminous semiconductor devices, LED chip has that power consumption is low, colourity is pure, long lifespan, small volume, response time are fast, energy-conserving and environment-protective
Deng many advantages.
Wherein, LED chip is in encapsulation process, and the material and packaging environment when packaged type, encapsulation are to LED chip
Large effect all be present in performance.In the encapsulation process of LED chip, aqueous vapor is penetrated into unavoidably, is caused inside encapsulating material
With chip electrode hydrolytic spoilage occurs for wire, metal migration occurs, LED chip surface is separated out conducting metal material, and then make
The positive and negative electrode conducting of LED chip, causes electric leakage；In addition, the conductive ion that steam penetrates into resides in the surface of LED chip, increase
Add electric leakage risk, so as to influence the photoelectric properties of LED chip.
Prior art, by reducing the infiltration of steam, the conducting distance of increase migration metal, can only be kept away in encapsulation process
Exempt under the use environment of the high brush of high frequency, because hydrolyzing the photoelectric properties of cause influence LED chip.
The content of the invention
Technical problem to be solved in the utility model is, there is provided a kind of LED chip of anti-metal migration, by right
LED chip metal electrode carries out Surface coating, prevents steam from penetrating into, and extension lead, metal electrode make just because hydrolysis occurs
The distance of negative pole conducting, avoids LED chip from leaking electricity, and extends LED chip service life.
A kind of LED chip of anti-metal migration includes：
Substrate；
Positioned at the cushion and ray structure of substrate surface, the ray structure includes first be arranged in order from the bottom up
Semiconductor layer, active layer and the second semiconductor layer；
Positioned at the first electrode of the first semiconductor layer surface；
Positioned at the transparency conducting layer of second semiconductor layer surface；
Positioned at the second electrode of the layer at transparent layer；
Positioned at the electrode adhesion layer of the first electrode surface and the second electrode surface；
The insulating barrier being covered in ray structure, transparency conducting layer, first electrode and second electrode；
Through the insulating barrier and the electrode adhesion layer, in the first hole of the first electrode surface, described
Second hole of two electrode surfaces.
Preferably, the material of the first electrode and the second electrode be Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh,
One or more of several metals in Sn, Cu, Ag.
Preferably, the material of the electrode adhesion layer is one or more of several metals in Ni, Al, Ti.
Implement the utility model, have the advantages that：
1st, the LED chip of a kind of anti-metal migration provided by the utility model, forms electrode adhesion layer, so in electrode surface
After form insulating barrier, the insulating barrier, which passes through the electrode adhesion layer and formed with the first electrode and the second electrode, to be connected
Connect, protect the first electrode and the second electrode, reduce steam and penetrate into, and extend both positive and negative polarity conducting distance, be effectively increased
Service life of the LED chip under the high brush ring border of high frequency.
2nd, the LED chip of a kind of anti-metal migration provided by the utility model, the first hole is formed in first electrode surface,
The second hole is formed in second electrode surface, first electrode and second electrode is exposed, in follow-up encapsulation process, envelope
The inner lead of dress is formed by first hole and first electrode and connected, and passes through second hole and the second electrode
Connection is formed, the side wall of first hole and second hole has dielectric protection layer, the directly making in LED chip
The infiltration of steam is reduced in journey, without improving packaging environment.
Brief description of the drawings
Fig. 1 is the preparation method flow chart for the LED chip that a kind of anti-metal of the utility model embodiment migrates；
Fig. 2 a are that the LED chip of the utility model embodiment forms the structural representation of cushion and ray structure；
Fig. 2 b are that the LED chip of the utility model embodiment forms the structural representation of transparency conducting layer；
Fig. 2 c are that the LED chip of the utility model embodiment forms the first exposed region and the structure of the second exposed region is shown
It is intended to；
Fig. 2 d are that the LED chip of the utility model embodiment forms the structural representation of LED chip semi-finished product；
Fig. 2 e are that the LED chip of the utility model embodiment forms the knot of first electrode, second electrode and electrode adhesion layer
Structure schematic diagram；
Fig. 2 f are that the LED chip of the utility model embodiment forms the structural representation of the first hole and the second hole；
Fig. 3 a are that the luminous micro-structural of the utility model embodiment to form the structural representation of positive photoresist layer；
Fig. 3 b form side and the institute of positive photoresist layer longitudinal cross-section for the luminous micro-structural of the utility model embodiment
State the line face angle θ of the second semiconductor layer structural representation；
Fig. 3 c are that the luminous micro-structural of the utility model embodiment forms the structural representation of reserved area；
Fig. 4 is the structural representation for the LED chip that a kind of anti-metal of the utility model embodiment migrates.
Embodiment
It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer
Type is described in further detail.
The preparation method that the utility model provides a kind of LED chip of anti-metal migration, its flow chart as shown in figure 1,
Comprise the following steps：
S1：One substrate is provided；
The material of substrate can be sapphire, carborundum or silicon, or other semi-conducting materials, it is excellent in the present embodiment
It is Sapphire Substrate to select substrate.
S2：Sequentially form cushion and ray structure over the substrate, the ray structure include sequentially forming the
Semi-conductor layer, active layer and the second semiconductor layer, wherein, first semiconductor layer surface is provided with reserved area；
Specifically, as shown in Figure 2 a, cushion 11 is formed on 10 any one surface of substrate, then in the surface shape of cushion 11
Into ray structure 20, ray structure 20 includes the first semiconductor layer 21 located at the surface of cushion 11, located at the first semiconductor layer
The active layer 22 on 21 surfaces, the second semiconductor layer 23 located at the surface of active layer 22, wherein, first semiconductor layer surface is set
There is reserved area 24.
Specifically, the first semiconductor layer and the second semiconductor layer that the embodiment of the present application provides are gallium nitride-based semiconductor
Layer, active layer is gallium nitride base active layer；In addition, the embodiment of the present application provide the first semiconductor layer, the second semiconductor layer and
The material of active layer can also be other materials, and this application is not particularly limited.
Wherein, the first semiconductor layer can be n type semiconductor layer, then the second semiconductor layer is p type semiconductor layer；Or
First semiconductor layer is p type semiconductor layer, and the second semiconductor layer is n type semiconductor layer, for the first semiconductor layer and second
The conduction type of semiconductor layer is not particularly limited to this application, it is necessary to be designed according to practical application.
Specifically, as shown in Fig. 3 a, 3b and 2a, forming the specific steps of the luminous micro-structural includes：
Positive photoresist layer 30 is formed on the surface of the second semiconductor layer 23., can in the other embodiment of the application
To use other photoresists, such as negative photoresist.
Photoetching is carried out to the positive photoresist layer 30, through the positive photoresist layer 30, makes the positive photoresist
The layer side of 30 longitudinal cross-sections and the line face angle of second semiconductor layer are θ.
Second semiconductor layer 23 is performed etching along the side of positive photoresist layer 30, formed through described the
Two semiconductor layers 23 and the active layer 22, and extend to the reserved area 24 of first semiconductor layer 21, the trough
The side of domain longitudinal cross-section and the line face angle of second semiconductor layer are θ '.
Using going glue to remove the positive photoresist layer 30, expose second semiconductor layer 23 and come.Specifically,
θ ' is more than 90 degree, the light sent from active layer, except being sent from the front of LED chip, can also be sent from reserved area, from
And improve the light extraction efficiency of LED chip.
S3：Transparency conducting layer is formed in second semiconductor layer surface, obtains LED wafer；
As shown in Figure 2 b, transparency conducting layer 40 is formed on the surface of the second semiconductor layer 23 using magnetron sputtering technique,
Obtain LED wafer.The area of wherein described transparency conducting layer is less than the area of second semiconductor layer.
S4：Negative photo glue-line is formed on LED wafer surface, and photoetching is carried out to the negative photo glue-line, described
The reserved area of first semiconductor layer surface forms the first exposed region, and the second exposed area is formed in the layer at transparent layer
Domain, the side of the first exposed region longitudinal cross-section and the line face angle of first semiconductor layer are θ 1, and described second is exposed
The side of region longitudinal cross-section and the line face angle of the transparency conducting layer are θ 2；
As shown in Figure 2 c, using photoetching process, negative photo glue-line 50 is formed on LED chip surface, then to described negative
Property photoresist layer 50 carry out photoetching, the surface of the first semiconductor layer 21 reserved area 24 formed the first exposed region 51,
The surface of transparency conducting layer 30 formed the second exposed region 52, the side of the first exposed region longitudinal cross-section with it is described
The line face angle of first semiconductor layer is θ 1, the side of the second exposed region longitudinal cross-section and the line face of the transparency conducting layer
Angle is θ 2.Wherein, the θ 1 is less than 90 degree, and the θ 2 is less than 90 degree；In addition, the θ 1 is equal to the θ 2.Preferably, institute
The area for stating the first exposed region is equal to the area of second exposed region, and the area of first exposed region is less than described
The area of reserved area.In the other embodiment of the application, other photoresists, such as negative photoresist can be used.
S5：First electrode is formed in first exposed region, second electrode is formed in second exposed region, in institute
State first electrode surface and the second electrode surface forms electrode adhesion layer, obtain LED chip semi-finished product；
As shown in Figure 2 d, using electron beam evaporation plating, magnetron sputtering, plating or chemical plating process, in first exposed area
The deposition filling metal level of domain 51 forms first electrode 61, and depositing filling metal level in second exposed region 52 forms the second electricity
Pole 62.Then, on the surface of first electrode 61 and the table surface forming electrode adhesion layer 63 of the second electrode 62, LED core is obtained
Piece semi-finished product.Wherein, the side of the longitudinal cross-section of first electrode 61 and the line face angle of first semiconductor layer are θ 1, described
The side of the longitudinal cross-section of second electrode 62 is θ 2 with the line face angle of the transparency conducting layer, and the θ 1 is less than 90 degree, the θ 2
Less than 90 degree.Preferably, the θ 1 is equal to the θ 2.In addition, the material of the first electrode and the second electrode be Cr,
One or more of several metals in Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, Ag, the material of the electrode adhesion layer are
One or more of several metals in Ni, Al, Ti.
S6：The negative photo glue-line is removed, and insulating barrier is formed in LED chip surface of semi-finished;
As shown in Figure 2 e, using plasma enhancing chemical vapor deposition method, it is exhausted in LED chip surface of semi-finished deposition
Edge layer 70.Wherein, the insulating barrier is covered in LED chip surface of semi-finished, including is covered in the first electrode and described
The surface of two electrodes and side wall.Specifically, the insulating barrier can be by one kind in silicon nitride, silica, silicon oxynitride or several
One layer or a few layer dielectrics composition that kind is formed.The insulating barrier passes through the electrode adhesion layer and the first electrode and described
Second electrode forms connection, protects the first electrode and the second electrode, reduces steam and penetrates into, and extends metal migration and causes
The distance of both positive and negative polarity conducting.
S7：The insulating barrier is performed etching, through the insulating barrier and electrode adhesion layer, formed in first electrode surface
First hole, the second hole is formed in second electrode surface；
As shown in figure 2f, using inductively coupled plasma or reactive ion etching process, the insulating barrier 70 is done
Method etches, and through the insulating barrier 70 and electrode adhesion layer 63, the first hole 71 is formed on the surface of first electrode 61, in the second electricity
The surface of pole 62 forms the second hole 72, and first electrode and second electrode is exposed, in follow-up encapsulation process, encapsulation
Inner lead is formed by first hole and first electrode and connected, and is formed by second hole with the second electrode
Connection, the side wall of first hole and second hole have dielectric protection layer, reduce the infiltration of steam, avoid inside
The wire of LED chip occurs to go bad with electrode, causes metal to migrate, so that LED chip surface separates out conducting metal, and then makes
The first electrode and second electrode conducting, cause short circuit.In addition, by the above method, the conduction that steam penetrates into is reduced
Ion residence is in the surface of LED chip, increase electric leakage risk, so as to influence the photoelectric properties of LED chip.Directly in LED chip
Manufacturing process in avoid wire and metal electrode caused by steam penetrates into from migrating, the problem of causing chip to leak electricity.
The utility model provides a kind of LED chip of anti-metal migration, its structural representation as shown in figure 4, including：
Substrate 10；
Positioned at the cushion 11 and ray structure 20 of substrate surface, the ray structure 20 includes being arranged in order from the bottom up
The first semiconductor layer 21, the semiconductor layer 23 of active layer 22 and second；
First electrode 61 positioned at the surface of the first semiconductor layer 21；
Transparency conducting layer 40 positioned at the surface of the second semiconductor layer 23；
Second electrode 62 positioned at the surface of transparency conducting layer 40；
Electrode adhesion layer 63 positioned at the surface of first electrode 61 and the surface of the second electrode 62；
Cover the insulating barrier 70 in ray structure 20, transparency conducting layer 40, first electrode 61 and second electrode 62；
Through the insulating barrier 70 and the electrode adhesion layer 63, the first hole 71 on the surface of first electrode 61,
Through the insulating barrier 70 and the electrode adhesion layer 63, the second hole 72 on the surface of second electrode 62.
Specifically, the material of the first electrode and the second electrode be Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh,
One or more of several metals in Sn, Cu, Ag.The material of the electrode adhesion layer is one or more of several in Ni, Al, Ti
Kind metal.
Specifically, the side of the longitudinal cross-section of first electrode 61 and the line face angle of first semiconductor layer 23 are θ 1,
The side of the longitudinal cross-section of second electrode 62 is that θ 1 described in the θ 2 and θ 2 is small with the line face angle of the transparency conducting layer 30
Yu Jiushi degree.Preferably, the θ 1 is equal to the θ 2.
Implement the present embodiment, have the advantages that：
1st, a kind of LED chip for anti-metal migration that the present embodiment provides, forms electrode adhesion layer, then in electrode surface
Insulating barrier is formed, the insulating barrier is formed by the electrode adhesion layer and the first electrode and the second electrode and connected,
The first electrode and the second electrode are protected, steam is reduced and penetrates into, and extends both positive and negative polarity conducting distance, is effectively increased
Service life of the LED chip under the high brush ring border of high frequency.
2nd, a kind of LED chip for anti-metal migration that the present embodiment provides, the first hole is formed in first electrode surface,
Second electrode surface forms the second hole, and first electrode and second electrode is exposed, in follow-up encapsulation process, encapsulation
Inner lead formed and connect by first hole and first electrode, pass through second hole and the second electrode shape
Into connection, the side wall of first hole and second hole has dielectric protection layer, the directly manufacturing process in LED chip
The middle infiltration for reducing steam, without improving packaging environment.
Above disclosed is only a kind of the utility model preferred embodiment, can not limit this practicality with this certainly
New interest field, therefore the equivalent variations made according to the utility model claims, still belong to what the utility model was covered
Scope.
Claims (3)
1. a kind of LED chip of anti-metal migration, including：
Substrate；
Positioned at the cushion and ray structure of substrate surface, what the ray structure included being arranged in order from the bottom up the first half leads
Body layer, active layer and the second semiconductor layer；
Positioned at the first electrode of the first semiconductor layer surface；
Positioned at the transparency conducting layer of second semiconductor layer surface；
Positioned at the second electrode of the layer at transparent layer；
Positioned at the electrode adhesion layer of the first electrode surface and the second electrode surface；
The insulating barrier being covered in ray structure, transparency conducting layer, first electrode and second electrode；
It is electric described second in the first hole of the first electrode surface through the insulating barrier and the electrode adhesion layer
Second hole on pole surface.
2. LED chip according to claim 1, it is characterised in that the material of the first electrode and the second electrode
For one kind in Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, Ag.
3. LED chip according to claim 1 or 2, it is characterised in that the material of the electrode adhesion layer is Ni, Al, Ti
In one kind.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720723480.3U CN206907786U (en) | 2017-06-21 | 2017-06-21 | A kind of LED chip of anti-metal migration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720723480.3U CN206907786U (en) | 2017-06-21 | 2017-06-21 | A kind of LED chip of anti-metal migration |
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| CN206907786U true CN206907786U (en) | 2018-01-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108493307A (en) * | 2018-05-04 | 2018-09-04 | 佛山市国星半导体技术有限公司 | A kind of packed LED chip and preparation method thereof |
| CN109004068A (en) * | 2017-06-21 | 2018-12-14 | 佛山市国星半导体技术有限公司 | A kind of LED chip and preparation method thereof of anti-metal migration |
| CN109037407A (en) * | 2018-08-03 | 2018-12-18 | 厦门乾照光电股份有限公司 | Semiconductor luminous chip and its manufacturing method |
| CN110554300A (en) * | 2019-09-05 | 2019-12-10 | 佛山市国星半导体技术有限公司 | Detection device and detection method for detecting hydrolysis resistance of LED chip |
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2017
- 2017-06-21 CN CN201720723480.3U patent/CN206907786U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109004068A (en) * | 2017-06-21 | 2018-12-14 | 佛山市国星半导体技术有限公司 | A kind of LED chip and preparation method thereof of anti-metal migration |
| CN109004068B (en) * | 2017-06-21 | 2024-10-01 | 佛山市国星半导体技术有限公司 | Metal migration resistant LED chip and manufacturing method thereof |
| CN108493307A (en) * | 2018-05-04 | 2018-09-04 | 佛山市国星半导体技术有限公司 | A kind of packed LED chip and preparation method thereof |
| CN109037407A (en) * | 2018-08-03 | 2018-12-18 | 厦门乾照光电股份有限公司 | Semiconductor luminous chip and its manufacturing method |
| CN109037407B (en) * | 2018-08-03 | 2024-04-23 | 厦门乾照光电股份有限公司 | Semiconductor light emitting chip and method for manufacturing the same |
| CN110554300A (en) * | 2019-09-05 | 2019-12-10 | 佛山市国星半导体技术有限公司 | Detection device and detection method for detecting hydrolysis resistance of LED chip |
| CN110554300B (en) * | 2019-09-05 | 2024-03-29 | 佛山市国星半导体技术有限公司 | Detection device and detection method for detecting hydrolysis resistance of LED chip |
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