CN206894269U - A kind of battery charging current foldback circuit - Google Patents
A kind of battery charging current foldback circuit Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A kind of battery charging current foldback circuit, including p-type FET PM1, PM4, PM5；N-type FET NM3, NM4, NM5；The source electrode of the PM1 connects VDD, grid and bias connections, and drain electrode is connected with NM5 grid；The drain electrode of the PM1 is also connected with PM4 source electrode, and the grid of the PM4 is connected with CS, grounded drain；The drain electrode of the NM5 is connected with VDD, source electrode and NM3 drain electrode connect；The grid connection of the grid and NM4 of the NM3, source ground；The bias is also connected with PM5 grid, source electrode and VDD connections, drain electrode are connected with NM4 drain electrode, and PM5 drain electrode is also connected with NM4 grid；The source ground of the NM4；Reach the effect of optimization battery charging overcurrent protection.
Description
Technical field
Battery boosting technology field is the utility model is related to, more particularly to a kind of circuit of battery charging overcurrent protection is set
Meter.
Background technology
With the extensive use of lithium battery and the lifting to lithium cell charging speed, the supporting lithium battery with lithium battery pack
Protection IC function and performance requirement is also in synchronized development.Wherein lithium cell charging overcurrent protection function has become higher-end lithium
An indispensable function of battery protection ic.
Some circuits used now have following several distinct disadvantages：Requirement to technique is higher, is not suitable for large quantities of
Amount production, it may cause to detect failure due to mismatch, and detection threshold value voltage process deviation is very big, accuracy of detection is poor, also not
Different charging excessively stream threshold value specification series etc. can be met.
The content of the invention
For this reason, it may be necessary to provide a kind of new battery charger, reach the effect of optimization battery charging overcurrent protection.
To achieve the above object, a kind of battery charging current foldback circuit, including p-type FET are inventor provided
PM1、PM4、PM5；N-type FET NM3, NM4, NM5；
The source electrode of the PM1 connects VDD, grid and bias connections, and drain electrode is connected with NM5 grid；The drain electrode of the PM1 is also
It is connected with PM4 source electrode, the grid of the PM4 is connected with CS, grounded drain；The drain electrode of the NM5 is connected with VDD, source electrode with
NM3 drain electrode connection；The grid connection of the grid and NM4 of the NM3, source ground；The bias also connects with PM5 grid
Connect, source electrode and VDD connections, drain electrode are connected with NM4 drain electrode, PM5 drain electrode is also connected with NM4 grid；The source electrode of the NM4
Ground connection；
The one end of the VDD also with current source, the other end of the current source are connected with comparator vn poles；The current source
The other end be also connected with one end of variable resistor, the other end of variable resistor ground connection；
The source electrode of the NM5 is also connected with the vp poles of comparator.
Wherein VDD is supply voltage, can be the external voltage on chip circuit, and bias is bias voltage.
Prior art is different from, above-mentioned technical proposal has the following advantages that：(1) charging excessively stream described in the utility model is protected
Shield detection realize circuit with it is existing realize circuit compared with, the utility model is less demanding being matched the device of selected technique；
(2) it is described in the utility model charging overcurrent protection detection realize circuit with it is existing realize circuit compared with, ratio used
Compared with the input common mode voltage of device>High matching and high-gain can be achieved in 0V, conventional comparator, so as to improve charging overcurrent protection threshold
It is worth the accuracy of detection of point；
(3) it is described in the utility model charging overcurrent protection detection realize circuit with it is existing realize circuit compared with, flexibility
It is higher, different charging over-current protection points can be can be obtained by by trimming, applicability is wider；
(4) it is described in the utility model charging overcurrent protection detection realize circuit with it is existing realize circuit compared with, precision is more
Height, over-current protection point difference is smaller between each chip, and batch uniformity is good；
(5) it is described in the utility model charging overcurrent protection detection realize circuit with it is existing realize circuit compared with, this practicality
New not high to technological requirement, the scope of application of circuit is wider.
Brief description of the drawings
Fig. 1 should for inside li-ion cell protection IC in the lithium battery pack described in the utility model embodiment and IC peripheries
Use circuit diagram；
Fig. 2 is that the first kind described in the utility model embodiment realizes that the circuit of charging overcurrent protection detection is illustrated
Figure；
Fig. 3 is that the second class described in the utility model embodiment realizes that the circuit of charging overcurrent protection detection is illustrated
Figure；
Fig. 4 is the charging over-current detection circuit described in the utility model embodiment.
Embodiment
To describe the technology contents of technical scheme, construction feature, the objects and the effects in detail, below in conjunction with specific reality
Apply example and coordinate accompanying drawing to be explained in detail.
Referring to Fig. 1, be lifting of the utility model with the extensive use of lithium battery and to lithium cell charging speed,
The li-ion cell protection IC supporting with lithium battery pack function and performance requirement is also in synchronized development.Wherein lithium cell charging excessively stream is protected
Protective function has become an indispensable function of higher-end li-ion cell protection IC.If Fig. 1 is in high-end li-ion cell protection IC
Portion and a kind of schematic block diagram of peripheral applications：
In Fig. 1, B+ is battery bag positive pole, is generally connected with external charger cathode output end during charging；B- is battery bag
Negative pole, generally it is connected with external charger negative pole during charging.B- voltages are negative value in normal charging process, typically in -0.05V
Between~-0.3V, B- voltages are passed to protection IC CS input pins by resistance R2, and voltage is constant, i.e. normal charging process
Middle CS input pins voltage is also between -0.05V~-0.3V.Then CS voltages are transferred to IC charge inside over-current detection modules
VD4, when CS negative voltage is less than the threshold voltage of VD4 settings, and be maintained for more than after certain time delay can be by chip output pin
COUT is set to low level, halt system charge function, that is, charging overcurrent protection occurs.
How to realize that reliable and stable charging overcurrent protection function turns into inside high-end li-ion cell protection IC currently to set
One of key of meter.Specifically, charging overcurrent protection refers to lithium battery pack in charger charging process is connected, due to some
Abnormal cause, cause charging current excessive, after charging current is more than some setting value, system shutdown charge circuit stops charging
Function.Because the electric current in charge circuit is difficult to detect, widespread practice be all by detect the voltage at CS ends come
Judge whether that charging excessively stream occurs.In charging process, the voltage at CS ends is negative value, and charging current is bigger, what CS terminal voltages were born
It is more, therefore the overcurrent protection function that charges can be arranged such that：When the voltage of system detectio to CS, less than some threshold values, (magnitude of voltage is
It is negative) after, system is judged as that charging excessively stream occurs, and triggering charging overcurrent protection action, cuts off charge circuit.
And the charging over-current detection function of above-mentioned VD4 modules is realized, we just need a negative voltage to compare in theory
Device and a negative reference voltage generation circuit, and a kind of circuit of simple, economic, feasible negative reference voltage is not easy to
Realize.Prior art has all been avoided substantially directly designs circuit for generating negative voltage, is filled using other feasible methods to realize
Electric over-current detection function.
Prior art has the following two kinds implementation method：1st, the comparison of negative voltage is realized to comparator using Double deference.2、
The comparison of negative voltage is realized using zero-crossing comparator.
Traditional first kind realizes that charging overcurrent protection schematic diagram is as shown in Figure 2 as described above；
Circuit is on circuit and adding a differential pair, in differential pair two in four input ports in conventional differential in Fig. 2
Input (M0 and M3) connecting to neutral current potential, M1 connects positive reference voltage (VCIP) in signal in another two input, and M2 connects CS ends, letter
Number OUT is output signal.
Operation principle is as follows：Because device PM0, PM1, PM2 breadth length ratio are identical, current mirror arrangement is formed, thus is flowed through
The electric current of their threes is identical, i.e.,：I0=I1=I2=2I, for differential pair tube M0 and M1, because M0 grid is 0 electricity
Position, M1 grid potential is positive potential, and their source potential is identical, obtains the electric current that device M0 flows through and is flowed more than device M1
The electric current crossed, i.e.,：I0=Im0+Im1, Im0=I+ δ I, Im1=I- δ I, Im0>Im1；For differential pair tube M2 and M3, because
Grid potential for M3 is 0 current potential, and M2 grid potential is normally negative potential, and their source potential is identical, obtains
The electric current flowed through to device M2 is more than the electric current that device M3 flows through, i.e.,：I1=Im2+Im3, Im2=I+ δ I1, Im3=I- δ I1,
Im2>Im3。
So, the electric current for flowing through device NM0 is：Inm0=Im0+Im3=I+ δ I+I- δ I1=2I+ (δ I- δ I1), flow through
Device NM1 electric current is：Inm1=Im1+Im2=I- δ I+I+ δ I1=2I+ (δ I1- δ I), from both the above formula, work as δ
I=δ I1,
The electric current Im0 for flowing through device NM0 is equal with the electric current Im1 for flowing through device NM1, and make it that δ I=δ I1 are set up, and needs
Device M2 grid potential CS=-VCIP is wanted, now comparator beinthebalancestate, when CS current potential is more than-VCIP, device
NM1 will enter linear zone, output signal OUT output high level；When CS current potential is less than-VCIP, device M1 will enter linear
Area, output signal OUT output low levels.Thus realize that upset point for-VCIP comparator function, can pass through change
VCIP value obtains required charging overcurrent protection value.This circuit cleverly make use of a Double deference pair, and allow wherein
Two input end groundings, input termination reference voltage so structure realize negative voltage and compared, and avoid using negative
Generating circuit from reference voltage.
Second class realizes that charging overcurrent protection detects schematic diagram is as shown in Figure 3：In the normal charging process shown in Fig. 3,
CS terminal voltages are a smaller negative values, typically in -0.05V~-0.30V.The voltage at CS ends and the relation of charging current are：
Charging current is bigger, CS voltage negatives it is more.When the voltage at CS ends can be less than some negative value, system is judged as charging
Over-current state.A zero-crossing comparator is devised for this, by introducing booster circuit in its input to realize.Device P1 in figure
It is grounded with device N1 grid, under normal circumstances when excessively stream (do not occur charge with), CS voltages are a less negative values, N1
Gate source voltage be less than its threshold voltage, N1 is in cut-off state, and P1 is in the conduction state all the time, the N of such comparator
End will be pulled to supply voltage, and comparator output low level, when charging excessively stream occurs, CS voltages become more negative, N1 conductings,
The driving force for devising N1 will be much stronger than P1 driving force, therefore N1 conducting after be in linear zone, N-terminal current potential, which is pulled to, to be less than
Zero potential, comparator are overturn, and export high level.Triggering charging overcurrent protection action.
The shortcomings that charging overcurrent protection detection circuit being realized referring initially to the first kind.After carefully analyzing, this circuit has as follows
Several distinct disadvantages：Requirement to technique is higher, is not suitable for producing in enormous quantities, may cause to detect failure due to mismatch
Deng.Made a concrete analysis of on these shortcomings as follows：During the analysis above, it will be assumed that I0=I1=2I, that is, be defaulted as
PM0 and PM1 are matched completely, but can not possibly accomplish this point in practice, and the matching between current mirror meets following condition：
In li-ion cell protection IC, electric current Id is nA levels, such metal-oxide-semiconductor overdrive voltage Vgs-Vth value very littles, is typically existed
Below 100mV；And PM0 and PM1 threshold voltage vt h mismatches meet following condition：
σ Vth=0.1*tox/sqr (W*L) (2)
The threshold voltage mismatch for obtaining device is similarly mv levels, and so resulting in match between current mirror PM0 and PM1 is not
It is highly desirable, intuitively from the point of view of be exactly electric current I0 and I1 unequal, and can differ greatly, and the feelings that electric current I0 and I1 differ greatly
Under condition, comparator may cisco unity malfunction.
In order to more preferably illustrate current mirror PM0 and PM1 mismatch (mismatch) degree and how cause comparator can not be just
Often work, bring specific data into here and carry out calculating analysis, consult process data and obtain：Tox=200A, PM0 and PM1's
Breadth length ratio is set as W/L=3um/12um, mirror currents Id=52nA, and upper mask body data band is entered in formula (2) and obtained：
σ Vth=0.1*tox/sqr (W*L)=0.1*200A/sqr (3um*12um)=3.34mV (3)
δ Vth Gaussian distributeds, it is meant that have 3 more than δ of Vth shift average value of 0.5% transistor.When Vth is inclined
When moving 3 δ Vth, the current mismatch electric current obtained by formula (1) between current mirror is：
From above formula, in the case of current mirror size completely matching, due to the threshold value electricity between device
The mismatch (mismatch) of (Vth) is pressed, the current mismatch (mismatch) of about 0.5% current mirror reaches 40%, lost
With under (mismatch) so serious situation, negative voltage comparator is likely to be at cisco unity malfunction state, the charging of system
Overcurrent protection function will fail, and the current mismatch (mismatch) for analyzing system in detail below in current mirror reaches 40%
Situation may result in the reason for cisco unity malfunction.
The electric current that current mirror PM0 is understood by data above is I0=52nA, because PM1 and PM0 is in the presence of 40%
Mismatch,
The electric current for obtaining current mirror PM1 is I1=I0* (1-40%)=52nA*60%=31.2nA, is such as analyzed before, device
Part M0 and device M1 electric current is respectively：Im0=I+ δ I, Im1=I- δ I, the electric current that they flow through differs 2 δ I, when their differences
The δ I of electric current 2>During 31.2nA, even if device PM1 electric current all flows through the branch road where M2, i.e. Im2=I1, device in part B
NM1 can still be in linear zone, and such output signal OUT can maintain high level always.I.e. no matter M2 grid potential have it is how low,
Output signal OUT can not be overturn as low level.So whether comparator cannot judge system there occurs charging excessively stream, and then
It can not be effectively protected.Case above also only considers electricity between the current mirror that threshold voltage mismatch (mismatch) is brought
The mismatch of stream, the mismatch of size between device is not also contemplated for into.Therefore realize charging excessively stream using this circuit structure
Defencive function, in chip batch metaplasia postpartum, the problem of bringing is exactly to have segment chip charging overcurrent protection function failure, production
Product yield can have a greatly reduced quality, and not possess economy.
Because having this shortcoming, the circuit of this structure does not have stable and safety in commercialization product,
Feasibility is not high.
The shortcomings that the second class realizes charging overcurrent protection detection circuit is seen again.Second class circuit has spy simple in construction
Point, it is easy to realize charging overprotection function, but there is also some shortcomings and limitations:Detection threshold value voltage process deviation
Very big, accuracy of detection is poor, can not meet different charging excessively stream threshold value specification series etc..As for reason, it is to utilize first
What the threshold voltage of nmos devices was judged as the reference voltage, and caused by the threshold voltage vth and technique of device partially
Difference is relevant, and the result so brought is exactly that the charging over-current protection point between each chip can have differences, and precision hardly results in
Ensure.Secondly, the threshold value of device is fixed, is very difficult to simply trim circuit to trim to obtain a series of differences by one
Charging over-current protection point, be actually needed with the specification for meeting different, due to two above be present in terms of deficiency so that it is this
The applicability of circuit structure has very big limitation, can not be used in commercially producing in batches.
From the point of view of the existing charging over-current detection implementation of both the above, technology still imperfection has a distinct disadvantage, 1,
Requirement to device matching design is high.2nd, input common mode voltage during required comparator work can obtain in 0V or so, ball bearing made
To high-gain.3rd, charge excessively stream threshold test precision it is difficult to ensure that.4th, different size can not be obtained by simply trimming
Charge over-current protection point.
The purpose of this utility model is to propose a kind of New-type charge overcurrent protection detection implementation, relative to existing skill
Art has the following advantages：
A, it is good without so harshness, the product that can be effectively improved after chip volume production the matched design requirement device
Rate；B, input common mode voltage when comparator works>0V, it is easy to realize high-gain comparator；C, to the less demanding of technique,
The versatility of circuit is more preferable, can be achieved using common process processing procedure.D, it is readily available different size by trimming circuit
Charge over-current protection point.E, high-precision needs be disclosure satisfy that.
In the embodiment shown in fig. 4, the utility model proposes a kind of battery charging current foldback circuit, including p-type
FET PM1, PM4, PM5；N-type FET NM3, NM4, NM5；
The source electrode of the PM1 connects VDD, grid and bias connections, and drain electrode is connected with NM5 grid；The drain electrode of the PM1 is also
It is connected with PM4 source electrode, the grid of the PM4 is connected with CS, grounded drain；The drain electrode of the NM5 is connected with VDD, source electrode with
NM3 drain electrode connection；The grid connection of the grid and NM4 of the NM3, source ground；The bias also connects with PM5 grid
Connect, source electrode and VDD connections, drain electrode are connected with NM4 drain electrode, PM5 drain electrode is also connected with NM4 grid；The source electrode of the NM4
Ground connection；
The one end of the VDD also with current source, the other end of the current source are connected with comparator vn poles；The current source
The other end one end of circuit also trimmed with reference voltage be connected, the reference voltage trims the other end ground connection of circuit；
The source electrode of the NM5 is also connected with the vp poles of comparator.
It is known that in charging process, the voltage at CS ends is negative value, detects whether that charging overcurrent protection occurs, is exactly
Whether detection CS voltages are less than some negative voltage, if directly realized using a common comparator, then system is just
Need a circuit that different numerical value negative voltages can be obtained by trimming, the negative electricity required for such comparator one end access
Pressure, other end access CS ends, it is possible to achieve charging over-current detection and defencive function, the key that this function is realized are generation one
Negative pressure module required for series, at present, it is difficult to a kind of simple, effectively, economic method be found, required for producing
Negative voltage.For this, the utility model proposes a kind of simple, effectively, economic circuit structure to realize negtive voltage detection,
So as to effectively realize charging over-current detection and protection.It is as follows to implement principle：The negative input end of comparator connects one admittedly
Fixed positive voltage (different magnitudes of voltage can be obtained by trim), positive input terminal passes through level shift circuit (level_
Shift) it is connected afterwards with CS ends, after thus the voltage that CS ends sample can having been carried out into the lifting of a current potential, obtains one
Individual positive voltage value, the positive voltage value for recycling to obtain so avoid directly to use negative pressure compared with comparator negative terminal current potential
It is compared, comparator positive input terminal current potential is：
Vp=Vcs+Vsg4-Vgs5=Vcs+ (Vsg4-Vgs5) (5)
Wherein vp is differential pair positive input terminal voltage；Vcs is the magnitude of voltage at CS ends, is negative value；Vsg4 is device PM4's
Source gate voltage value；Vgs5 is the gate source voltage value of nmos devices；Vsg4 and Vgs5 size and respective breadth length ratio and flow through
It is current related.In actual circuit, Vsg4 and Vgs5 specific size can be set as needed, and it is suitable then to obtain
Vsg4-Vgs5 differences, the negative level at CS ends is displaced to an appropriate positive voltage value, can thus avoid directly being born
Voltage ratio compared with.
I5=(1/2) * μnCox(W/L)(Vgs5-Vthn)2 (6)
Obtain
I4=(1/2) * μpCox(W/L)(|Vgs4|-|Vthp|)2 (8)
Obtain
Vsg4 and Vgs5 is brought into formula (5) respectively to obtain：
Further arrange and obtain：
It is relevant with Vthp-Vthn differences that voltage vps of the Vcs after level shift can see by formula above, and
The two values of Vthp-Vthn are related to technique, and under different technique corner, Vthp and Vthn value are also different
, that is the magnitude of voltage vp obtained after level shift is relevant with technique, and charge excessively stream for the chip of some specification
Protection point be it is consistent, i.e., corresponding Vcs values be it is consistent, vp values corresponding to the chip of so same specification be it is inconsistent,
But this problem can solve when test by trimming circuit.It is also original creation design to trim circuit, for adjusting
Error differentiation caused by above-mentioned technique, technique corner generation deviations are eliminated by trimming to obtain different vn values, obtain one
The charging over-current protection point of cause.In the embodiment of some simplification, trim circuit directly can be entered using equivalent adjustable resistance
Row substitutes, and can play the technique effect for reducing cost.
In addition, the voltage of vp and vn nodes is set in circuit design>0V, input common mode voltage when comparator works are
Just.More conventional comparator circuit is so used, comparator inside and process matching are without specially treated, it is possible to obtain higher
Voltage gain, so as to improve charging over-current detection threshold voltage precision.
In summary, this circuit has more applicability, requires not high to technological requirement and comparator design, and pass through
Simply precision can be ensured by trimming circuit.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply and deposited between these entities or operation
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability includes, so that process, method, article or terminal device including a series of elements not only include those
Key element, but also the other element including being not expressly set out, or it is this process, method, article or end also to include
The intrinsic key element of end equipment.In the absence of more restrictions, limited by sentence " including ... " or " including ... "
Key element, it is not excluded that other key element in the process including the key element, method, article or terminal device also be present.This
Outside, herein, " being more than ", " being less than ", " exceeding " etc. are interpreted as not including this number；" more than ", " following ", " within " etc. understand
It is to include this number.
It should be understood by those skilled in the art that, the various embodiments described above can be provided as method, apparatus or computer program production
Product.These embodiments can use the embodiment in terms of complete hardware embodiment, complete software embodiment or combination software and hardware
Form.All or part of step in the method that the various embodiments described above are related to can by program come instruct the hardware of correlation come
Complete, described program can be stored in the storage medium that computer equipment can be read, for performing the various embodiments described above side
All or part of step described in method.The computer equipment, include but is not limited to：Personal computer, server, general-purpose computations
It is machine, special-purpose computer, the network equipment, embedded device, programmable device, intelligent mobile terminal, intelligent home device, wearable
Smart machine, vehicle intelligent equipment etc.；Described storage medium, include but is not limited to：RAM, ROM, magnetic disc, tape, CD, sudden strain of a muscle
Deposit, USB flash disk, mobile hard disk, storage card, memory stick, webserver storage, network cloud storage etc..
The various embodiments described above are with reference to method, equipment (system) and the computer program product according to embodiment
Flow chart and/or block diagram describe.It should be understood that can be by every in computer program instructions implementation process figure and/or block diagram
One flow and/or the flow in square frame and flow chart and/or block diagram and/or the combination of square frame.These computers can be provided
Programmed instruction is to the processor of computer equipment to produce a machine so that passes through the finger of the computing device of computer equipment
Order, which produces, to be used to realize what is specified in one flow of flow chart or multiple flows and/or one square frame of block diagram or multiple square frames
The device of function.
These computer program instructions may be alternatively stored in the computer that computer equipment can be guided to work in a specific way and set
In standby readable memory so that the instruction being stored in the computer equipment readable memory produces the manufacture for including command device
Product, the command device is realized to be referred in one flow of flow chart or multiple flows and/or one square frame of block diagram or multiple square frames
Fixed function.
These computer program instructions can be also loaded on computer equipment so that performed on a computing device a series of
Operating procedure is to produce computer implemented processing, so as to which the instruction performed on a computing device is provided for realizing in flow
The step of function of being specified in one flow of figure or multiple flows and/or one square frame of block diagram or multiple square frames.
Although the various embodiments described above are described, those skilled in the art once know basic wound
The property made concept, then other change and modification can be made to these embodiments, so the foregoing is only reality of the present utility model
Example is applied, not thereby limits scope of patent protection of the present utility model, it is every to utilize the utility model specification and accompanying drawing content
The equivalent structure or equivalent flow conversion made, or other related technical areas are directly or indirectly used in, similarly include
Within scope of patent protection of the present utility model.
Claims (1)
- The current foldback circuit 1. a kind of battery charges, it is characterised in that including p-type FET PM1, PM4, PM5；Imitate N-type field Should pipe NM3, NM4, NM5；The source electrode of the PM1 connects VDD, grid and bias connections, and drain electrode is connected with NM5 grid；The drain electrode of the PM1 also with PM4 source electrode connection, the grid of the PM4 is connected with CS, grounded drain；The drain electrode of the NM5 is connected with VDD, source electrode and NM3 Drain electrode connection；The grid connection of the grid and NM4 of the NM3, source ground；The bias is also connected with PM5 grid, source The drain electrode that pole is connected with VDD, drains with NM4 is connected, and PM5 drain electrode is also connected with NM4 grid；The source ground of the NM4；The one end of the VDD also with current source, the other end of the current source are connected with comparator vn poles；The current source it is another One end is also connected with one end of variable resistor, the other end ground connection of the variable resistor；The source electrode of the NM5 is also connected with the vp poles of comparator.
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| CN201720441336.0U CN206894269U (en) | 2017-04-25 | 2017-04-25 | A kind of battery charging current foldback circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134822A (en) * | 2017-04-25 | 2017-09-05 | 福建省福芯电子科技有限公司 | A kind of battery charging current foldback circuit |
| CN110095646A (en) * | 2019-04-24 | 2019-08-06 | 南京中感微电子有限公司 | Detection of negative pressure circuit and battery protecting circuit |
| CN110108918A (en) * | 2019-03-28 | 2019-08-09 | 南京中感微电子有限公司 | Detection of negative pressure circuit and battery protecting circuit |
-
2017
- 2017-04-25 CN CN201720441336.0U patent/CN206894269U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134822A (en) * | 2017-04-25 | 2017-09-05 | 福建省福芯电子科技有限公司 | A kind of battery charging current foldback circuit |
| CN107134822B (en) * | 2017-04-25 | 2023-05-16 | 福建省福芯电子科技有限公司 | Battery charging overcurrent protection circuit |
| CN110108918A (en) * | 2019-03-28 | 2019-08-09 | 南京中感微电子有限公司 | Detection of negative pressure circuit and battery protecting circuit |
| CN110108918B (en) * | 2019-03-28 | 2021-07-09 | 南京中感微电子有限公司 | Negative pressure detection circuit and battery protection circuit |
| CN110095646A (en) * | 2019-04-24 | 2019-08-06 | 南京中感微电子有限公司 | Detection of negative pressure circuit and battery protecting circuit |
| CN110095646B (en) * | 2019-04-24 | 2021-07-09 | 南京中感微电子有限公司 | Negative pressure detection circuit and battery protection circuit |
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