CN206727099U - Light emitting diode and the filament light-emitting diode lights including the light emitting diode - Google Patents
Light emitting diode and the filament light-emitting diode lights including the light emitting diode Download PDFInfo
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- CN206727099U CN206727099U CN201720364344.XU CN201720364344U CN206727099U CN 206727099 U CN206727099 U CN 206727099U CN 201720364344 U CN201720364344 U CN 201720364344U CN 206727099 U CN206727099 U CN 206727099U
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/002—Fastening arrangements intended to retain light sources the fastening means engaging the encapsulation or the packaging of the semiconductor device
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Abstract
The utility model provides a kind of light emitting diode and the filament light-emitting diode lights including the light emitting diode.According to the light emitting diode of an embodiment it is characterised in that it includes：Semiconductor layer stack, it includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and the active layer between first conductive-type semiconductor layer and the second conductive-type semiconductor layer；ZnO transparent electrode layers, it is located on second conductive-type semiconductor layer；First electrode, it is connected with first conductive-type semiconductor layer；And second electrode, it is connected with the ZnO transparent electrode layers, wherein, the surfaces of the ZnO transparent electrode layers, which has, is confined to the part for not forming the second electrode and the bumps formed.
Description
Technical field
A kind of light emitting diode and the filament light-emitting diode lights including the light emitting diode are the utility model is related to, are had
Body, there is provided a kind of relatively low light emitting diode of caloric value and the filament light-emitting diode lights including the light emitting diode.
Background technology
Usually as indoors either outdoor illuminating lamp and more use incandescent lamp or fluorescent lamp, but so
Incandescent lamp or fluorescent lamp there is the shortcomings that service life is short, power consumption is big.
It is such in order to solve the problems, such as, develop one kind apply with simple drive control, faster response speed,
The filament light-emitting diode lights of the light emitting diode of longer service life, little power consumption and high brightness characteristic.
However, the general size of light emitting diode that filament light-emitting diode lights are included is smaller, therefore powered electric current
Density is big, therefore produces the heat of higher temperatures.In addition, filament light-emitting diode lights include multiple light emitting diodes, multiple luminous two
The configuration space of pole pipe is closeer, so because the impaired possibility of heat is higher.
Utility model content
Problem to be solved in the utility model is to provide a kind of less light emitting diode of caloric value.
It is low that another problem to be solved in the utility model is to provide a kind of forward voltage, and light extraction efficiency is improved
Light emitting diode.
Another problem to be solved in the utility model is to provide a kind of light emitting diode for the stripping that can prevent electrode.
Another problem to be solved in the utility model is to provide a kind of filament light-emitting module with higher reliability.
Another problem to be solved in the utility model is to provide a kind of including the filament light-emitting with higher reliability
The filament light-emitting diode lights of module.
According to the light emitting diode of an embodiment of the present utility model it is characterised in that it includes：Semiconductor layer stack, its
Including the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and between first conductive-type semiconductor layer and
Active layer between two conductive semiconductor layer；ZnO transparent electrode layers, it is located on second conductive-type semiconductor layer；The
One electrode, it is connected with first conductive-type semiconductor layer；And second electrode, itself and the ZnO transparent electrode layers phase
Connection, wherein, the surface of the ZnO transparent electrode layers includes being confined to not form the part of the second electrode and formed
It is concavo-convex.
The angle that the end of the ZnO transparent electrode layers can be formed with the upper surface of second conductive-type semiconductor layer
For right angle or acute angle.
The angle that the end of the ZnO transparent electrode layers can be formed with the upper surface of second conductive-type semiconductor layer
For obtuse angle.
The semiconductor layer stack can include a part of exposed table top erosion for making first conductive-type semiconductor layer
Region is carved, the first electrode is connected in the mesa etch region with first conductive-type semiconductor layer.
The first electrode can include first electrode pad and the first electrode from first electrode pad extension
Extension, the second electrode can include second electrode pad and the second electrode from second electrode pad extension is prolonged
Extending portion.
According to the filament light-emitting diode lights of an embodiment of the present utility model it is characterised in that it includes：Lamp socket portion；Gu
Due to the transparency cover in the lamp socket portion；And in the transparency cover, and at least one filament being connected with the lamp socket portion
Light emitting module, wherein, at least one filament light-emitting module includes multiple light emitting diodes, and each light emitting diode includes：
Semiconductor layer stack, it includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and between the described first conduction
Active layer between type semiconductor layer and the second conductive-type semiconductor layer；ZnO transparent electrode layers, it is located at second conductivity type
On semiconductor layer；First electrode, it is connected with first conductive-type semiconductor layer；And second electrode, itself and the ZnO
Transparent electrode layer is connected, wherein, the surface of the ZnO transparent electrode layers includes being confined to not form the second electrode
The bumps partly formed.
The angle that the end of the ZnO transparent electrode layers can be formed with the upper surface of second conductive-type semiconductor layer
For right angle or acute angle.
The angle that the end of the ZnO transparent electrode layers can be formed with the upper surface of second conductive-type semiconductor layer
For obtuse angle.
The semiconductor layer stack can include a part of exposed table top erosion for making first conductive-type semiconductor layer
Region is carved, the first electrode is connected in the mesa etch region with first conductive-type semiconductor layer.
The first electrode can include first electrode pad and the first electrode from first electrode pad extension
Extension, the second electrode can include second electrode pad and the second electrode from second electrode pad extension is prolonged
Extending portion.
The driver for being used to control the driving of at least one filament light-emitting module can also be included.
It can also include being used for the supporter that at least one filament light-emitting module is fixed on to the lamp socket portion.
The filament light-emitting module can also include：Supporting substrate；And the electrode positioned at the both ends of the supporting substrate,
The multiple light emitting diode is mounted on the supporting substrate.
The filament light-emitting module can also include the ripple that covering is pasted with the supporting substrate of the multiple light emitting diode
Long conversion layer.
The supporting substrate can have linear pattern rod-shape.
The supporting substrate includes at least one of curve regions.
The inside of the transparency cover can be vacuum state.
The thicker ZnO transparent electrode layers of thickness are included according to the light emitting diode of embodiment of the present utility model, so as to
Enough relatively low forward voltage drivings, therefore heat caused by itself can be less.In addition, including caloric value it is less luminous two
Even if the filament light-emitting diode lights of pole pipe do not include other heat sinks, the radiating gas for radiating, it is possibility to have effect ground work
Make.
Brief description of the drawings
Fig. 1 is the plan according to the light emitting diode of embodiment of the present utility model；Fig. 2 is the line of cut along Fig. 1
The profile that A-A' is obtained；Fig. 3 is the profile obtained along Fig. 1 line of cut B-B'.
Fig. 4 to Figure 10 is the signal for illustrating the manufacture method of the light emitting diode according to embodiment of the present utility model
Property profile.
Figure 11 a to Figure 11 c show manufacture method and lamp of the origin according to the filament light-emitting module of an embodiment of utility model
Silk light emitting module.
Figure 12 to Figure 15 shows the various embodiments according to filament light-emitting diode lights of the present utility model.
Embodiment
To enable the those skilled in the art of the utility model art to fully understand thought of the present utility model,
Illustrate following examples.Therefore, the utility model is not limited to embodiments discussed below, can also pass through its other party
Formula is realized.Also, in the accompanying drawings, the width of component, length and thickness etc., sometimes use exaggeration being retouched for convenience of description
State mode.In addition, in the case where being recited as a component and being located at " top " or " top " of another component, not only include each
Part is located at the situation of " upper part " or " surface " of another part, and is additionally included between each group part and other assemblies
Situation provided with other assemblies.Throughout the specification, identical reference numeral represents identical component.
According to the light emitting diode of embodiment of the present utility model it is characterised in that it includes：Semiconductor layer stack, it includes
First conductive-type semiconductor layer, the second conductive-type semiconductor layer and led between first conductive-type semiconductor layer with second
Active layer between electric type semiconductor layer；ZnO transparent electrode layers, it is located on second conductive-type semiconductor layer；First electricity
Pole, it is connected with first conductive-type semiconductor layer；And second electrode, it is connected with the ZnO transparent electrode layers,
Wherein, wherein, the surface of the ZnO transparent electrode layers, which has, to be confined to not form the part of the second electrode and formed
It is concavo-convex.
Characterized in that, the concavo-convex size with more than 50nm.
In addition, it is characterised in that the end of the ZnO transparent electrode layers and the upper table of second conductive-type semiconductor layer
The angle that face is formed is right angle or acute angle or obtuse angle.
The semiconductor layer stack includes making a part of exposed mesa etch area of first conductive-type semiconductor layer
Domain, the first electrode pad and first electrode extension are partly led in the mesa etch region with first conductivity type
Body layer is connected.
The first electrode includes first electrode pad and the first electrode extension from first electrode pad extension,
The second electrode includes second electrode pad and the second electrode extension from second electrode pad extension.
According to the filament light-emitting diode lights of embodiment of the present utility model it is characterised in that it includes：Lamp socket portion；It is transparent
Lid, is fixed on the lamp socket portion；At least one filament light-emitting module, in the transparency cover, it is connected with the lamp socket portion,
Wherein, at least one filament light-emitting module includes multiple light emitting diodes, and each light emitting diode includes：Semiconductor multilayer
Body, it includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and between first conductive-type semiconductor layer
With the active layer between the second conductive-type semiconductor layer；ZnO transparent electrode layers, it is located at second conductive-type semiconductor layer
On；First electrode, it is connected with first conductive-type semiconductor layer；And second electrode, itself and the ZnO transparency electrodes
Layer is connected, wherein, the surfaces of the ZnO transparent electrode layers has a part for being confined to not formed the second electrode and shape
Into bumps.
The filament light-emitting diode lights can also include the driving for being used for controlling at least one filament light-emitting module
Driver, also, can also include at least one filament light-emitting module being fixed on the supporter in the lamp socket portion.
Herein, the filament light-emitting module is characterised by, in addition to supporting substrate；And positioned at the supporting substrate
The electrode at both ends, the multiple light emitting diode are mounted on the supporting substrate.
The filament light-emitting module can also include the ripple that covering is pasted with the supporting substrate of the multiple light emitting diode
Long conversion layer.
Herein, the supporting substrate can have linear pattern rod-shape or including at least one of curve on the whole
Region.The inside of the transparency cover can keep vacuum state.
Hereinafter, embodiment of the present utility model is explained in detail with reference to the accompanying drawings.
Fig. 1 is the plan according to the light emitting diode of embodiment of the present utility model；Fig. 2 is the line of cut along Fig. 1
The profile that A-A' is obtained；Fig. 3 is the profile obtained along Fig. 1 line of cut B-B'.
Referring to figs. 1 to Fig. 3, included according to the light emitting diode of the present embodiment：Substrate 10；Semiconductor layer stack 20, its position
In on the substrate 10, and including the first conductive-type semiconductor layer 21, the conductive-type semiconductor layer 25 of active layer 23 and second；With
And transparent electrode layer 30, it is located in the semiconductor layer stack 20.In addition, light emitting diode also includes and the first conductivity type half
First electrode 40 that conductor layer 21 is connected and the second electrode 50 being connected with transparent electrode layer 30.
Light emitting diode can have rectangular flat shape, accordingly can include first side 1, second side 2, with
The 3rd relative side 3 of first side 1 and fourth side 4 relative with second side 2.However, according to of the present utility model
The flat shape of light emitting diode is not limited to this, can include various shapes.
If substrate 10 is suitable for the substrate 10 for growing gallium nitride semiconductor layer stack 20, not by special limit
It is fixed.Substrate 10 can for example include sapphire substrate 10, silicon carbide substrate 10, gallium nitride base board 10, aluminium nitride substrate 10, silicon substrate
Plate 10 etc..
First conductive-type semiconductor layer 21 can be located on the substrate 10.First conductive-type semiconductor layer 21 be doped with
The semiconductor layer of first type conductivity dopant.First conductive-type semiconductor layer 21 can by GaN layer, InGaN layer, AlGaN layer,
The formation of at least one of InAlGaN layers, when first conductive-type semiconductor layer 21 is n-type semiconductor layer, described first
Type conductivity dopant can include one or more of Si, Ge, Sn, Se, Te as n-type dopant.
Active layer 23 can be located on the first conductive-type semiconductor layer 21.Active layer 23 can be formed as single quantum well or
Multiple quantum trap (MQW) structure.Active layer 23 can utilize the group iii v compound semiconductor material of 3 race -5 and be formed as GaN layer,
At least one of InGaN layer, AlGaN layer, InAlGaN layers.For example, active layer 23 can have the well layer for including InGaN layer
The structure of stacking is alternately repeated with the barrier layer (barrier) including GaN layer.Active layer 23 can be by from the first conductivity type half
The carrier and produced from the mechanism that is recombinated of carrier of the second conductive-type semiconductor layer 25 described later supply that conductor layer 21 is supplied
Light.When first conductive-type semiconductor layer 21 is n-type semiconductor layer, from first conductive-type semiconductor layer 21 supply
Carrier can be electronics, when the second conductive-type semiconductor layer 25 is p-type semiconductor layer, from second conductive-type semiconductor layer
The carrier of 25 supplies can be hole.
Although illustrating not in the drawings, light emitting diode can also include being located at first conductive-type semiconductor layer 21
Superlattice layer between active layer 23.Superlattice layer can stop the crystalline substance according to the conductive-type semiconductor layer 21 of substrate 10 and first
Lattice constant difference and the transfer of the indexing (dislocation) that makes to be formed at the first conductive-type semiconductor layer 21 to active layer 23,
So as to improve the node quality of active layer 23.
Second conductive-type semiconductor layer 25 can be located on active layer 23.Second conductive-type semiconductor layer 25 include doped with
The semiconductor layer of second type conductivity dopant, individual layer or multilayer can be formed as.Second conductive-type semiconductor layer 25 can
To be formed by least one of GaN layer, InGaN layer, AlGaN layer, InAlGaN layers.When the second conductive-type semiconductor layer 25 is p
During type semiconductor layer, second type conductivity dopant can include as one in Mg, Zn, Ca, Sr, Ba of p-type dopant
More than kind.
In addition to the first conductive-type semiconductor layer 21, the conductive-type semiconductor layer 25 of active layer 23 and second, in order to carry
High crystalline quality, semiconductor layer stack 20 can include non-doped layer or other cushions, when the second conductive-type semiconductor layer
25 when being p-type semiconductor layer, the current barrier layer that such as can be formed between the conductive-type semiconductor layer 25 of active layer 23 and second
(not shown) include various functional layers.
Semiconductor layer stack 20 can utilize MOCVD (Metal Organic Chemical Vapor in cavity
Depositin, metal-organic chemical vapor deposition equipment) technology growth is on substrate 10.However, embodiment of the present utility model is simultaneously
Be not limited to this, the semiconductor layer stack 20 can utilize MBE (Molecular Beam Epitaxy, molecular beam epitaxy),
The technology growths such as HVPE (Hydride Vapor Phase Epitaxy, hydride gas-phase epitaxy) are on the substrate 10.
The semiconductor layer stack 20 can include a part of exposed table top erosion for making the first conductive-type semiconductor layer 21
Carve region 20a.The mesa etch region 20a can pass through one to the second conductive-type semiconductor layer 25 and active layer 23
Divide and be etched and formed.In addition, in mesa etch region 20a forming process, the one of the first conductive-type semiconductor layer 21
Part can also be etched.Reference picture 1, mesa etch region 20a can be from the sides of second side 2 and the 3rd of light emitting diode
The part of direction extension of the corner that face 3 is met along second side 2 to first side 1 has relatively wide shape.Table top
Etching area 20a can provide the region for forming first electrode 40 described later.
Transparent electrode layer 30 can be located on the second conductive-type semiconductor layer 25.Transparent electrode layer 30 is by metal oxide
The ohmic contact layer of formation, especially, when the second conductive-type semiconductor layer 25 is p-type semiconductor layer, by with the second conductivity type
Semiconductor layer 25 forms Ohmic contact and can improve current spreading effect.
ZnO transparent electrode layers 30 can be included according to light emitting diode of the present utility model.ZnO transparent electrode layers 30 with
Ito transparent electrode layer 30 is compared, and has the relatively low characteristic of absorptance.For example, it is assumed that when there is identical thickness, the transparent electricity of ZnO
The light absorptance of pole layer 30 can be equivalent to 1/20 level of the light absorptance of ito transparent electrode layer 30, thus, by the transparent electricity of ZnO
The light quantity that pole layer 30 absorbs and is lost may be smaller than ito transparent electrode layer 30.
ZnO transparent electrode layers 30 can be formed as thicker thickness due to the relatively low characteristic of absorptivity.With
The thickness for forming transparent electrode layer 30 thicker, following effect can be expected.
First, the characteristic being inversely proportional to the thickness according to resistance value, when the thickness of transparent electrode layer 30 is formed as into thicker,
The resistance value of transparent electrode layer 30 can diminish.When the resistance value of transparent electrode layer 30 becomes small, current spread is easier to, and it is tied
Fruit, the forward voltage (Vf) of light emitting diode can diminish.When applying the electric current of formed objects, the forward voltage of light emitting diode
(Vf) smaller then power consumption can be smaller, as a result, the caloric value of light emitting diode can also diminish.
In addition, when the thickness of transparent electrode layer 30 is formed as into thicker, be advantageous to be formed on the surface of transparent electrode layer 30
The process of bumps 31, also, the limitation of the size of the bumps 31 to being formed may be smaller.On the surface of transparent electrode layer 30
A certain size the bumps 31 formed can reduce the total reflectivity of light so as to improve the light extraction efficiency of light emitting diode.In root
The bumps formed according to the surface of the ZnO transparent electrode layers 30 of the light emitting diode of the application utility model can have more than 50nm
Size.However, in the case where such as ito transparent electrode layer of transparent electrode layer 30 is equally relatively thin, can also be in its surface shape
Into bumps, but in this case, concavo-convex formation process may be very intractable, and the concavo-convex size formed may be by very big
Limitation.In the case of the limited size of bumps, the total reflection of light can not be efficiently reduced.
Reference picture 2 and Fig. 3, although bumps 31 are formed at the surface of transparent electrode layer 30, have and be not formed at and second
The feature for the region alpha that electrode 50 connects.That is, bumps 31 can be on the surface of transparent electrode layer 30 except second electrode pad 51
And other regions outside the region alpha that is connected of second electrode extension 53 are formed.Because in the table of transparent electrode layer 30
Face, when the region alpha for connecting second electrode 50 forms bumps, second electrode 50 is easily peeled off from transparent electrode layer 30.Therefore, it is
The reliability of light emitting diode is improved, region alpha that the surface of transparent electrode layer 30 is connected with second electrode 50 can not wrap
Include bumps 31.
First electrode 40 can be located at by the first exposed mesa etch region 20a conductive-type semiconductor layer 21.The
One electrode 40 can include first electrode pad 41 and the first electrode extension 43 extended from first electrode pad 41.Reference
Fig. 1, the mesa etch for the adjacent corners that first electrode pad 41 connects in the second side 2 of light emitting diode with the 3rd side 3
In the 20a of region, it can be located on the first conductive-type semiconductor layer 21.In addition, first electrode extension 43 can be from first electrode
Pad 41 extends and extended along the second side 2 of light emitting diode to the direction of first side 1.
Second electrode 50 can be located on transparent electrode layer 30.That is, second electrode 50 can be located on transparent electrode layer 30,
And it is electrically connected with the second conductive-type semiconductor layer 25.Second electrode 50 can be including second electrode pad 51 and electric from second
The second electrode extension 53 that pole pad 51 extends.Reference picture 1, second electrode pad 51 can be in the first sides of light emitting diode
The adjacent corners that face 1 connects with the 4th side 4, on transparent electrode layer 30.In addition, second electrode extension 53 can be from
Two electrode pads 51 extend and extended along the 4th side 4 of light emitting diode to the direction of the 3rd side 3.
First electrode pad 41 and second electrode pad 51 are used to electrically connect light emitting diode, for example, can be first
Electrode pad 41 and second electrode pad 51 form wire bonding respectively.By electric with first electrode pad 41 and second respectively
The lead that pole pad 51 is bonded, light emitting diode can electrically connect with external device (ED), and can obtain power supply.According to first
The structure that two corners of electrode pad 41 and second electrode pad 51 on a light emitting diode configure face to face, can be effective
Realize current spread in ground.In addition, by first electrode extension 43 and second electrode extension 53, can be in light emitting diode
Current spread is effectively realized, as a result, the output of light emitting diode can be improved.
, can be by from golden (Au), silver-colored (Ag), aluminium although first electrode 40 and second electrode 50 are not limited to this
(Al), copper (Cu) or at least one conductive material including being selected in these alloy are formed.Also, the He of first electrode 40
Second electrode 50 can be formed by identical process.
Fig. 4 to Figure 10 is the signal for illustrating the manufacture method of the light emitting diode according to embodiment of the present utility model
Property profile.
Reference picture 4, first prepared substrate 10, semiconductor layer stack 20 and transparency electrode are then formed on the substrate 10
Layer 30.Semiconductor layer stack 20 can include nitride semiconductor layer, and transparent electrode layer 30 can include ZnO transparent electrode layers
30.Semiconductor layer stack 20, for example, can be by the way that substrate 10 is configured in cavity, and utilize MOCVD (Metal Organic
Chemical Vapor Depositin) technology and be grown on substrate 10.ZnO transparent electrode layers 30, can be by that will grow
The substrate 10 for having semiconductor layer stack 20 is configured in cavity, and utilizes Hydrothermal Synthesiss (hydrothermal synthesis) skill
Art and be grown in the semiconductor layer stack 20.ZnO transparent electrode layers 30 and the phase of semiconductor layer stack 20 being disposed below
There is together buergerite (wurtzite) crystalline texture.
Reference picture 5, the first mask 60 is formed on transparent electrode layer 30.First mask 60 can include making transparent electrode layer
30 a part of the first exposed opening portion 60a.
Reference picture 6a to Fig. 6 c, the first opening portion 60a of the first mask 60 can be utilized and etch transparent electrode layer 30.
ZnO transparent electrode layers 30 are included according to light emitting diode of the present utility model, ZnO has the characteristic very fragile to acid.Therefore,
Wet type erosion can be carried out using the acid solution transparent electrode layer 30 exposed to the first opening portion 60a by the first mask 60
Carve.
In this case, when carrying out Wet-type etching, transparent electricity can be controlled by controlling the ph values of acid solution
The gradient that the end of pole layer 30 and the upper surface of the second conductive-type semiconductor layer 25 are formed.For example, relatively low using ph values
During strongly acidic solution Wet-type etching ZnO transparent electrode layers 30, as shown in Figure 6 a, the end of ZnO transparent electrode layers 30 can be formed
With the reversed-trapezoid structure 30a that the angle that the upper surface of the second conductive-type semiconductor layer 25 is formed is obtuse angle.When ZnO transparent electrode layers
When 30 end has reversed-trapezoid structure 30a, light extraction efficiency may be very good.That is, have in the end of ZnO transparent electrode layers 30
When having reversed-trapezoid structure 30a, the total reflection on the surface of ZnO transparent electrode layers 30 and towards the end of ZnO transparent electrode layers 30
Light is no longer totally reflected and projected to outside.
On the contrary, when using ph values higher weakly acidic solution Wet-type etching ZnO transparent electrode layers 30, as fig. 6 c,
It is acute angle that the angle that the end of ZnO transparent electrode layers 30 is formed with the upper surface of the second conductive-type semiconductor layer 25, which can be formed,
Mesa structure (30c).Also, when using ph values acid solution Wet-type etching ZnO transparent electrode layers 30 therebetween, such as figure
Shown in 6b, the angle that the end of ZnO transparent electrode layers 30 is formed with the upper surface of the second conductive-type semiconductor layer 25 can be formed
For the structure (30b) at right angle., may in terms of electrology characteristic when the end of ZnO transparent electrode layers 30 has mesa structure 30c
Can be more more effective than reversed-trapezoid structure 30a.That is, when the end of ZnO transparent electrode layers 30 has mesa structure 30c, the transparent electricity of ZnO
The area that pole layer 30 is contacted with the second conductive-type semiconductor layer 25 may be more wider than reversed-trapezoid structure 30a, therefore can be more
Effectively realize current spread.
Reference picture 7, in Fig. 6 a to Fig. 6 c by the etching of transparent electrode layer 30 and exposed semiconductor layer stack 20
A part be etched, so as to form mesa etch region 20a.Mesa etch region 20a can pass through dry-etching
Method is formed.Specifically, the first opening portion 60a and utilization sputter etching, reactive ion etching, gas phase of the first mask 60 are utilized
The methods of etching, is etched to the second conductive-type semiconductor layer 25 and active layer 23, so as to so that the first conductive-type semiconductor
Layer 21 is exposed.In this case, a part for the first conductive-type semiconductor layer 21 can also be etched.Reference picture 7, table top erosion
Carving region 20a side can be formed obliquely.
Reference picture 8, the second mask 70 can be formed on transparent electrode layer 30 and mesa etch region 20a.Second mask
70 can include the second opening portion 70a.Second opening portion 70a can be formed as multiple.For example, one in the second opening portion 70a
It is individual to make a part of exposed of transparent electrode layer 30 on transparent electrode layer 30 also, another in the second opening portion 70a
One can be located on the 20a of mesa etch region and make a part of exposed of the first conductive-type semiconductor layer 21.
Reference picture 9, the second opening portion 70a of the second mask 70 can be utilized to form first electrode 40 and second electrode
50.Although only disclosing the first electrode extension 43 formed using the second opening portion 70a in fig.9, can fully analogize
Same method can be utilized to form first electrode pad 41, second electrode pad 51 and second electrode extension 53.Also,
Although accompanying drawing illustrate only first electrode extension 43, but common lift-off technology can be utilized to form first electrode 40 and second
Electrode 50.
Reference picture 10, bumps 31 can be formed on the surface of transparent electrode layer 30.Specifically, acid solution can be used
The surface of transparent electrode layer 30 is etched and forms bumps 31.It can be wrapped according to the light emitting diode of the application utility model
ZnO transparency electrodes 30 are included, as described above, the thickness shape of ZnO transparent electrode layers 30 can be made due to relatively low optical absorption characteristics
As thicker.That is, ZnO transparent electrode layers 30 can have the enough thickness for the degree that can include bumps 31 on its surface.
ZnO has the characteristic very fragile to acid.Therefore, it is transparent by using the acid solution short time processing ZnO for diluting more
The method of electrode layer 30 can be formed on its surface bumps 31, and can according to the concentration of its processing time and acid solution and
The size of control bumps 31.It is, for example, possible to use show 1000 greatly:It is saturating that 1 dilution proportion obtains more acid solution processing ZnO
Prescribed electrode layer 30 about 40 seconds or so, and bumps 31 are formed on its surface.The bumps 31 formed by this method can have about
More than 50nm size.
Because the formation process of bumps 31 is implemented after the formation process of second electrode 50, therefore it is being connected with the second electricity
The surface of the transparent electrode layer 30 of the part of pole pad 51 and second electrode extension 53 can not form concavo-convex 31 patterns.It is this
Feature is by foregoing Fig. 3 and open.I.e., it is possible in the transparency electrode in addition to the part formed with second electrode 50
Remaining region of layer 30 forms bumps 31.If bumps 31 are formed on the surface for the transparent electrode layer 30 being connected with second electrode 50
Pattern, then because second electrode 50 is easily peeled off from transparent electrode layer 30, therefore in the transparency electrode for being connected with second electrode 50
The surface of layer 30 does not form concavo-convex 31 patterns.
Figure 11 a to Figure 11 c show the manufacture method and lamp of the filament light-emitting module according to an embodiment of the present utility model
Silk light emitting module.
Reference picture 11a, prepare supporting substrate 310 first.Supporting substrate 310 can be by glass, hard glass, quartzy glass
The formation such as glass, crystalline ceramics or plastics.Or supporting substrate 310 can be according to an embodiment and by flexible (flexible)
Material is formed.The both ends of supporting substrate 310 can have electrode 320 respectively.The electrode 320 is used for filament light-emitting module
300 supply external powers.The electrode 320 can be fixed on supporting substrate 310 by adhesive etc..
Although disclosing supporting substrate 310 in fig. 11 a has the situation of linear pattern bar (bar) shape, do not limit to
In this.That is, at least a portion region of supporting substrate 310 can include curve shape.Supporting substrate 310 can be formed as having
Curve shape, or, the supporting substrate 310 of linear pattern rod-shape can be formed by flexible (flxible) material and make at least one
Partially due to external force can be deformed into curve shape.Due to the supporting substrate 310 of curve shape, such as Figure 13 can be produced extremely
Variously-shaped filament light-emitting module 300 shown in 15.
Reference picture 11b, at least one light emitting diode 330 can be mounted on the supporting substrate 310.It is mounted on filament
The light emitting diode 330 of light emitting module 300 is relatively small, hereby it is possible to be driven under higher current density condition, so as to
The heat of high temperature is produced in each light emitting diode.In addition, the light emitting diode 330 for being mounted on filament light-emitting module 300 can be with
Very high Density and distribution.That is, the distance between light emitting diode 330 is possible to relatively very small, therefore in unit area
In caused heat may be very big.In this case, filament light-emitting module 300 is possible to because more caused by itself
It is hot and impaired.
Therefore, can be included including ZnO transparent electrode layers 30 according to the filament light-emitting module 300 of the application utility model
Light emitting diode shown in Fig. 1 to Figure 10.As described above, the light emitting diode comprising ZnO transparent electrode layers 30 can be used relatively
Relatively low forward voltage (Vf) driving, therefore with the less feature of caloric value.Therefore, the hair of ZnO transparent electrode layers 30 is included
Optical diode can be driven under high current densities, and be suitable for the filament light-emitting module configured to high-density.
Referring again to Figure 11 b, multiple light emitting diodes 330 can electrically connect by lead 331.Although show in Figure 11 b
Go out the situation that multiple light emitting diodes 330 are connected in series by lead 331, but this can not be understood to be the limit to embodiment
System.That is, according to other embodiment, multiple light emitting diodes 330 can also be connected in parallel or series/parallel connection.Multiple hairs
The light emitting diode 330 positioned at outermost in optical diode 330 can be electrically connected by the electrode 320 and lead 331.
In addition, supporting substrate 310 can include electric wiring (not shown), now, each light emitting diode is not required for
By the bonding of lead 331.I.e., in this case, the electricity that each light emitting diode can be included by supporting substrate 310
Gas is connected up (not shown) and electrically connected in a manner of series/parallel connection.
Reference picture 11c, the supporting substrate 310 that covering is pasted with least one light emitting diode 330 can be formed
Wavelength conversion layer 340.Wavelength conversion layer 340 can cover a part for electrode 320 to improve the stability of structure.Wavelength
Conversion layer 340 includes fluorophor, and fluorophor can make the wavelength of the light from light emitting diode change.Wavelength conversion layer
340 fluorophor that can include various combinations combine, so as to control the wavelength of the light sent from filament light-emitting module 300.
Figure 12 to Figure 15 shows the various embodiments according to filament light-emitting diode lights of the present utility model.
Reference picture 12 to Figure 15, filament light-emitting diode lights can include lamp socket portion 100, transparency cover 200 and lamp simultaneously
Silk light emitting module 300.In addition, filament light-emitting diode lights can also include wiring portion 400 and supporter 500.
Lamp socket portion 100 can be made up of electric conductor, can be connected and be played to the filament light-emitting module with external device (ED)
The effect of 300 supply electric powers.
Transparency cover 200 can be made up of the transparent material that can pass through light, and its lower end can be with the lamp socket portion
100 are connected.Transparency cover 200 can be make light spread and to the light diffuser cap of external emission, therefore, filament light-emitting diode
Lamp can have wider sensing angle.In addition, transparency cover 200, which can play, protects filament light-emitting module 300 on its interior
Effect.The shape of the transparency cover 200 as shown in Figure 12 to Figure 15 can be open and approximately spherical with its lower end
Shape, it is not limited to this.
Filament light-emitting module 300 can include multiple light emitting diodes.In addition, filament light-emitting module 300 can also include
Supporting substrate, electrode and wavelength conversion layer.Multiple light emitting diodes are mounted on supporting substrate, and can to connect respectively,
In parallel or in series/mode in parallel electrically connects.
Filament light-emitting module 300 includes the filament light-emitting module 300 shown in Figure 11 a to Figure 11 c, filament light-emitting module 300
Comprising multiple light emitting diodes can include Fig. 1 to Figure 10 shown in light emitting diode.That is, filament light-emitting module 300 can
With including above-mentioned ZnO transparent electrode layers, and can include that the hair that relatively low forward voltage drive and caloric value is less can be used
Optical diode.Accordingly, heat caused by filament light-emitting module 300 itself may be less, therefore, the danger being damaged by high temperature
Performance is enough less.
In contrast, included according to the filament light-emitting module of prior art by with the transparent of relatively thin thickness formation
Electrode layer and the light emitting diode with of a relatively high forward voltage, therefore producing due to higher caloric value sends out filament
The problem of optical module is damaged and reduces reliability.Therefore, gas small using viscosities such as such as helium and higher thermal conductivity and
Will be in heat dissipation caused by filament light-emitting module to outside.That is, employ viscosity is low and thermal conductivity is higher gas
Be filled into inside transparency cover, and using the gas convection current and by from heat dissipation caused by filament light-emitting module to outside
Method.
However, according to the filament light-emitting module 300 of the application utility model because the forward voltage of light emitting diode is relatively low
Characteristic, and make self-heating amount less, therefore with not having in transparency cover 200 comprising the excellent of other gases for being used to radiating
Point.Accordingly, do not include gas according to the filament light-emitting diode lights of the application utility model, therefore there is manufacturing expense and manufacture
Technologic advantage, and the less-restrictive being subject to when selecting the material and shape of transparency cover.For example, transparency cover 200 can be with
It is to be sealed, the vacuum state not comprising gas can be kept inside it.As another example, transparency cover 200 can include with it is outer
The connected opening portion in portion, air can be filled with inside transparency cover 200.
Wiring portion 400 plays a part of filament supports light emitting module 300, and can play filament light-emitting module 300
It is electrically connected to the effect in lamp socket portion 100.One end of wiring portion 400 is connected to the electrode portion of filament light-emitting module 300, and the other end can
To be connected to lamp socket portion 100.
Supporter 500 can play a part of supporting the wiring portion 400 and the filament light-emitting module 300.Support
Body 500 can be fixed on lamp socket portion 100, and a part of of the wiring portion 400 can pass through the structure through the supporter 500
And it is fixed on supporter 500.
Also, although in the accompanying drawings without disclosure, filament light-emitting diode lights can also include being used to control filament
The drive division of the driving of light emitting module.The drive division can control single filament light emitting module or series/parallel connection
The driving of multiple filament light-emitting modules.The drive division can be located at the space inside lamp socket portion 100.
According to single research, the filament light-emitting diode lights shown in Figure 12 include two linear pattern filament light emitting modules
300a, 300b, described two linear pattern filament light emitting module 300a, 300b have the structure being connected in series.However, this can not be managed
Solve to be the restriction to embodiment, therefore filament light-emitting diode lights can include the lamp of one, three, four etc. a variety of quantity
Silk light emitting module 300.In addition, multiple filament light-emitting modules 300 can not only have the structure being connected in series, can also have simultaneously
Connection connection, the structure of series/parallel connection.In addition, multiple filament light-emitting modules 300, which can have, can make caused shadow mutually
The various configuration structures that son minimizes.
Filament light-emitting diode lights shown in Figure 13 include a shaped form filament light-emitting module 300, and with filament hair
The structure that the both ends of optical module 300 are connected with wiring portion 400.Furthermore it is also possible to including for filament light-emitting module 300 to be fixed
In the lead 510 of supporter 500.
Filament light-emitting diode lights shown in Figure 14 can include two filament light-emitting modules 300a, 300b, each filament
Light emitting module 300a, 300b can include linearity region and curve regions.
Filament light-emitting diode lights shown in Figure 15 include a coiled-coil filament light emitting module 300, and with filament hair
Optical module 300 is helically rotated centered on supporter 500 and is surrounded the structure of supporter 500.
Claims (17)
- A kind of 1. light emitting diode, it is characterised in that including：Semiconductor layer stack, including the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and led between described first Active layer between electric type semiconductor layer and the second conductive-type semiconductor layer；ZnO transparent electrode layers, on second conductive-type semiconductor layer；First electrode, it is connected with first conductive-type semiconductor layer；AndSecond electrode, it is connected with the ZnO transparent electrode layers,The surface of the ZnO transparent electrode layers includes being confined to the part for not forming the second electrode and the bumps formed.
- 2. light emitting diode according to claim 1, it is characterised in thatThe angle that the upper surface of the end of the ZnO transparent electrode layers and second conductive-type semiconductor layer is formed for right angle or Acute angle.
- 3. light emitting diode according to claim 1, it is characterised in thatThe angle that the end of the ZnO transparent electrode layers and the upper surface of second conductive-type semiconductor layer are formed is obtuse angle.
- 4. light emitting diode according to claim 1, it is characterised in thatThe semiconductor layer stack includes making a part of exposed mesa etch region of first conductive-type semiconductor layer,The first electrode is connected in the mesa etch region with first conductive-type semiconductor layer.
- 5. light emitting diode according to claim 1, it is characterised in thatThe first electrode includes first electrode pad and the first electrode extension from first electrode pad extension,The second electrode includes second electrode pad and the second electrode extension from second electrode pad extension.
- A kind of 6. filament light-emitting diode lights, it is characterised in that including：Lamp socket portion；Transparency cover, it is fixed on the lamp socket portion；AndAt least one filament light-emitting module, it is connected in the transparency cover, and with the lamp socket portion,At least one filament light-emitting module includes multiple light emitting diodes,Each light emitting diode includes：Semiconductor layer stack, including the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and led between described first Active layer between electric type semiconductor layer and the second conductive-type semiconductor layer；ZnO transparent electrode layers, on second conductive-type semiconductor layer；First electrode, it is connected with first conductive-type semiconductor layer；AndSecond electrode, it is connected with the ZnO transparent electrode layers,The surface of the ZnO transparent electrode layers includes being confined to the part for not forming the second electrode and the bumps formed.
- 7. filament light-emitting diode lights according to claim 6, it is characterised in thatThe angle that the upper surface of the end of the ZnO transparent electrode layers and second conductive-type semiconductor layer is formed for right angle or Acute angle.
- 8. filament light-emitting diode lights according to claim 6, it is characterised in thatThe angle that the end of the ZnO transparent electrode layers and the upper surface of second conductive-type semiconductor layer are formed is obtuse angle.
- 9. filament light-emitting diode lights according to claim 6, it is characterised in thatThe semiconductor layer stack includes making a part of exposed mesa etch region of first conductive-type semiconductor layer,The first electrode is connected in the mesa etch region with first conductive-type semiconductor layer.
- 10. filament light-emitting diode lights according to claim 6, it is characterised in thatThe first electrode includes first electrode pad and the first electrode extension from first electrode pad extension,The second electrode includes second electrode pad and the second electrode extension from second electrode pad extension.
- 11. filament light-emitting diode lights according to claim 6, it is characterised in thatAlso include the driver for being used to control the driving of at least one filament light-emitting module.
- 12. filament light-emitting diode lights according to claim 11, it is characterised in thatAlso include being used for the supporter that at least one filament light-emitting module is fixed on to the lamp socket portion.
- 13. filament light-emitting diode lights according to claim 6, it is characterised in thatThe filament light-emitting module also includes：Supporting substrate；AndElectrode positioned at the both ends of the supporting substrate,The multiple light emitting diode is mounted on the supporting substrate.
- 14. filament light-emitting diode lights according to claim 13, it is characterised in thatThe filament light-emitting module also includes the wavelength conversion layer that covering is pasted with the supporting substrate of the multiple light emitting diode.
- 15. filament light-emitting diode lights according to claim 13, it is characterised in thatThe supporting substrate has linear pattern rod-shape.
- 16. filament light-emitting diode lights according to claim 13, it is characterised in thatThe supporting substrate includes at least one of curve regions.
- 17. filament light-emitting diode lights according to claim 6, it is characterised in thatThe inside of the transparency cover is vacuum state.
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| KR10-2017-0028455 | 2017-03-06 | ||
| KR1020170028455A KR20180101908A (en) | 2017-03-06 | 2017-03-06 | Light emitting diode and filament light emitting diode lamp including the light emitting diode |
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| CN108538985A (en) * | 2017-03-06 | 2018-09-14 | 首尔伟傲世有限公司 | Light emitting diode and filament light-emitting diode lights including the light emitting diode |
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| US9240435B2 (en) * | 2009-06-11 | 2016-01-19 | Joled Inc | Organic EL display |
| CN102447027A (en) * | 2011-12-16 | 2012-05-09 | 北京工业大学 | Vertical structure type light-emitting diode with high light extraction window |
| KR101482526B1 (en) * | 2012-12-28 | 2015-01-16 | 일진엘이디(주) | Method of manufacturing nitride semiconductor light emitting device |
| CN203644774U (en) * | 2013-12-24 | 2014-06-11 | 深圳市研一科技有限公司 | LED bulb |
| KR20150121933A (en) * | 2014-04-22 | 2015-10-30 | 서울바이오시스 주식회사 | Light emitting diode and manufacturing method therefor |
| KR20180101908A (en) * | 2017-03-06 | 2018-09-14 | 서울바이오시스 주식회사 | Light emitting diode and filament light emitting diode lamp including the light emitting diode |
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