CN108538985A - Light emitting diode and filament light-emitting diode lights including the light emitting diode - Google Patents
Light emitting diode and filament light-emitting diode lights including the light emitting diode Download PDFInfo
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- CN108538985A CN108538985A CN201710225010.9A CN201710225010A CN108538985A CN 108538985 A CN108538985 A CN 108538985A CN 201710225010 A CN201710225010 A CN 201710225010A CN 108538985 A CN108538985 A CN 108538985A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/002—Fastening arrangements intended to retain light sources the fastening means engaging the encapsulation or the packaging of the semiconductor device
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of light emitting diode and the filament light-emitting diode lights including the light emitting diode.According to the light emitting diode of an embodiment it is characterised in that it includes：Semiconductor layer stack comprising the first conductive type semiconductor layer, the second conductive type semiconductor layer and the active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer；ZnO transparent electrode layers are located on the second conductive type semiconductor layer；First electrode is connected with the first conductive type semiconductor layer；And second electrode, it is connected with the ZnO transparent electrode layers, wherein the surface of the ZnO transparent electrode layers, which has, is confined to the part for not forming the second electrode and the bumps formed.
Description
Technical field
The present invention relates to a kind of light emitting diode and the filament light-emitting diode lights including the light emitting diode, specifically
Ground provides a kind of lower light emitting diode of calorific value and the filament light-emitting diode lights including the light emitting diode.
Background technology
Usually as indoors either outdoor headlamp and more use incandescent lamp or fluorescent lamp, but in this way
Incandescent lamp or fluorescent lamp have the shortcomings that service life is short, power consumption is big.
In order to solve the problems, develop one kind apply with simple drive control, faster response speed,
The filament light-emitting diode lights of the light emitting diode of longer service life, little power consumption and high brightness characteristic.
However, the general size of light emitting diode that filament light-emitting diode lights are included is smaller, therefore driven electric current
Density is big, therefore generates the heat of higher temperatures.In addition, filament light-emitting diode lights include multiple light emitting diodes, multiple luminous two
The configuration space of pole pipe is closeer, so the possibility because of thermal damage is higher.
Invention content
Project to be solved by this invention is to provide a kind of light emitting diode that calorific value is less.
Another project to be solved by this invention is to provide that a kind of forward voltage is low, and the hair that light extraction efficiency is improved
Optical diode.
Another project to be solved by this invention is to provide a kind of light emitting diode for the stripping that can prevent electrode.
Another project to be solved by this invention is to provide a kind of filament light-emitting module with higher reliability.
It includes the filament light-emitting module for having higher reliability that another project to be solved by this invention, which is to provide a kind of,
Filament light-emitting diode lights.
The light emitting diode of an embodiment according to the present invention it is characterised in that it includes：Semiconductor layer stack comprising
It the first conductive type semiconductor layer, the second conductive type semiconductor layer and is led with second between the first conductive type semiconductor layer
Active layer between electric type semiconductor layer；ZnO transparent electrode layers are located on the second conductive type semiconductor layer；First electricity
Pole is connected with the first conductive type semiconductor layer；And second electrode, it is connected with the ZnO transparent electrode layers,
Wherein, the surface of the ZnO transparent electrode layers includes the part for being confined to not form the second electrode and the bumps formed.
The end of the ZnO transparent electrode layers can be formed by angle with the upper surface of the second conductive type semiconductor layer
For right angle or acute angle.
The end of the ZnO transparent electrode layers can be formed by angle with the upper surface of the second conductive type semiconductor layer
For obtuse angle.
The semiconductor layer stack may include making a part of exposed table top erosion of the first conductive type semiconductor layer
Region is carved, the first electrode is connected in the mesa etch region with the first conductive type semiconductor layer.
The first electrode may include first electrode pad and the first electrode that extends from the first electrode pad
Extension, the second electrode may include that second electrode pad and the second electrode extended from the second electrode pad are prolonged
Extending portion.
The filament light-emitting diode lights of an embodiment according to the present invention it is characterised in that it includes：Lamp holder portion；It is fixed on
The transparency cover in the lamp holder portion；And in the transparency cover, and at least one filament light-emitting being connect with the lamp holder portion
Module, wherein at least one filament light-emitting module includes multiple light emitting diodes, and each light emitting diode includes：Partly lead
Body laminated body comprising the first conductive type semiconductor layer, the second conductive type semiconductor layer and between the first conductive type half
Active layer between conductor layer and the second conductive type semiconductor layer；ZnO transparent electrode layers are partly led positioned at the second conductive type
On body layer；First electrode is connected with the first conductive type semiconductor layer；And second electrode, it is transparent with the ZnO
Electrode layer is connected, wherein the surface of the ZnO transparent electrode layers includes the part for being confined to not formed the second electrode
And the bumps formed.
The end of the ZnO transparent electrode layers can be formed by angle with the upper surface of the second conductive type semiconductor layer
For right angle or acute angle.
The end of the ZnO transparent electrode layers can be formed by angle with the upper surface of the second conductive type semiconductor layer
For obtuse angle.
The semiconductor layer stack may include making a part of exposed table top erosion of the first conductive type semiconductor layer
Region is carved, the first electrode is connected in the mesa etch region with the first conductive type semiconductor layer.
The first electrode may include first electrode pad and the first electrode that extends from the first electrode pad
Extension, the second electrode may include that second electrode pad and the second electrode extended from the second electrode pad are prolonged
Extending portion.
It can also include the driver of the driving for controlling at least one filament light-emitting module.
It can also include the supporter at least one filament light-emitting module to be fixed on to the lamp holder portion.
The filament light-emitting module can also include：Supporting substrate；And the electrode positioned at the both ends of the supporting substrate,
The multiple light emitting diode is mounted on the supporting substrate.
The filament light-emitting module can also include the wave that covering is pasted with the supporting substrate of the multiple light emitting diode
Long conversion layer.
The supporting substrate can have linear type rod-shape.
The supporting substrate includes at least part of curve regions.
The inside of the transparency cover can be vacuum state.
Light emitting diode according to an embodiment of the invention includes the thicker ZnO transparent electrode layers of thickness, so as to
Lower forward voltage driving, therefore the heat that itself is generated can be less.In addition, including the less light emitting diode of calorific value
Even if filament light-emitting diode lights do not include for heat dissipation other heat sinks, heat dissipation gas, it is possibility to have effect ground work.
Description of the drawings
Fig. 1 is the plan view of light emitting diode according to an embodiment of the invention；Fig. 2 is the cutting line A-A' along Fig. 1
Obtained sectional view；Fig. 3 is the sectional view obtained along the cutting line B-B' of Fig. 1.
Fig. 4 to Figure 10 is schematically cuing open for the manufacturing method for illustrating light emitting diode according to an embodiment of the invention
Face figure.
Figure 11 a to Figure 11 c show that this sends out according to the manufacturing method and filament of the filament light-emitting module of an embodiment of invention
Optical module.
Figure 12 to Figure 15 shows the various embodiments of filament light-emitting diode lights according to the present invention.
Specific implementation mode
To enable the those skilled in the art of the technical field of the invention to fully understand the thought of the present invention, illustrate
Following embodiment.Therefore, the present invention is not limited to embodiments discussed below, can also realize by other means.Also,
In the accompanying drawings, the width of component, length and thickness etc. for convenience of description, sometimes using the describing mode of exaggeration.In addition,
In the case where being recorded as a component and being located at " top " or " top " of another component, include not only each section be located at it is another
The case where partial " upper part " or " surface ", but also be included between each component and other assemblies and be equipped with other assemblies
The case where.Throughout the specification, identical reference numeral indicates identical component.
Light emitting diode according to an embodiment of the invention it is characterised in that it includes：Semiconductor layer stack comprising first
Conductive-type semiconductor layer, the second conductive type semiconductor layer and between the first conductive type semiconductor layer and the second conductive type
Active layer between semiconductor layer；ZnO transparent electrode layers are located on the second conductive type semiconductor layer；First electrode,
It is connected with the first conductive type semiconductor layer；And second electrode, it is connected with the ZnO transparent electrode layers, wherein
Wherein, the surface of the ZnO transparent electrode layers, which has, is confined to the part for not forming the second electrode and the bumps formed.
It is characterized in that, the concave-convex size with 50nm or more.
In addition, which is characterized in that the upper table of the end of the ZnO transparent electrode layers and the second conductive type semiconductor layer
The angle that face is formed is right angle or acute angle or obtuse angle.
The semiconductor layer stack includes making a part of exposed mesa etch area of the first conductive type semiconductor layer
Domain, the first electrode pad and first electrode extension are partly led in the mesa etch region with the first conductive type
Body layer is connected.
The first electrode includes first electrode pad and the first electrode extension that extends from the first electrode pad,
The second electrode includes second electrode pad and the second electrode extension that extends from the second electrode pad.
Filament light-emitting diode lights according to an embodiment of the invention it is characterised in that it includes：Lamp holder portion；Transparency cover,
It is fixed on the lamp holder portion；At least one filament light-emitting module is located in the transparency cover, is connected with the lamp holder portion,
In, at least one filament light-emitting module includes multiple light emitting diodes, and each light emitting diode includes：Semiconductor multilayer
Body comprising the first conductive type semiconductor layer, the second conductive type semiconductor layer and between the first conductive type semiconductor layer
With the active layer between the second conductive type semiconductor layer；ZnO transparent electrode layers are located at the second conductive type semiconductor layer
On；First electrode is connected with the first conductive type semiconductor layer；And second electrode, with the ZnO transparent electrodes
Layer is connected, wherein the surface of the ZnO transparent electrode layers has a part for being confined to not formed the second electrode and shape
At bumps.
The filament light-emitting diode lights can also include the driving for controlling at least one filament light-emitting module
Driver, also, can also include the supporter that at least one filament light-emitting module is fixed on to the lamp holder portion.
Herein, the filament light-emitting module is characterized in that, further includes supporting substrate；And it is located at the supporting substrate
The electrode at both ends, the multiple light emitting diode are mounted on the supporting substrate.
The filament light-emitting module can also include the wave that covering is pasted with the supporting substrate of the multiple light emitting diode
Long conversion layer.
Herein, the supporting substrate can have linear type rod-shape or on the whole including at least part of curve
Region.The inside of the transparency cover can keep vacuum state.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is the plan view of light emitting diode according to an embodiment of the invention；Fig. 2 is the cutting line A-A' along Fig. 1
Obtained sectional view；Fig. 3 is the sectional view obtained along the cutting line B-B' of Fig. 1.
Referring to figs. 1 to Fig. 3, include according to the light emitting diode of the present embodiment：Substrate 10；Semiconductor layer stack 20, position
In on the substrate 10, and include the first conductive type semiconductor layer 21, active layer 23 and the second conductive type semiconductor layer 25；With
And transparent electrode layer 30, it is located in the semiconductor layer stack 20.In addition, light emitting diode further includes and the first conductive type half
The first electrode 40 that conductor layer 21 is connected and the second electrode 50 being connected with transparent electrode layer 30.
Light emitting diode can have rectangular flat shape, may include accordingly first side 1, second side 2, with
The opposite third side 3 of first side 1 and fourth side 4 opposite with second side 2.However, according to the present invention shine
It's not limited to that for the flat shape of diode, may include various shapes.
If substrate 10 is suitable for the substrate 10 for making gallium nitride semiconductor layer stack 20 grow, not by special limit
It is fixed.Substrate 10 for example may include sapphire substrate 10, silicon carbide substrate 10, gallium nitride base board 10, aluminium nitride substrate 10, silicon substrate
Plate 10 etc..
The first conductive type semiconductor layer 21 can be located on the substrate 10.The first conductive type semiconductor layer 21 be doped with
The semiconductor layer of the first conductive type dopant.The first conductive type semiconductor layer 21 can by GaN layer, InGaN layer, AlGaN layer,
At least one of InAlGaN layers formation, when the first conductive type semiconductor layer 21 is n-type semiconductor layer, described first
Type conductivity dopant may include one or more of Si, Ge, Sn, Se, Te as n-type dopant.
Active layer 23 can be located on the first conductive type semiconductor layer 21.Active layer 23 can be formed as single quantum well or
Multiple quantum trap (MQW) structure.Active layer 23 can be formed as using -5 group iii v compound semiconductor material of 3 race GaN layer,
At least one of InGaN layer, AlGaN layer, InAlGaN layers.For example, active layer 23 can be with the well layer for including InGaN layer
The structure of stacking is alternately repeated with the barrier layer (barrier) including GaN layer.Active layer 23 can be by from the first conductive type half
The carrier and generated from the mechanism that the carrier of aftermentioned the second conductive type semiconductor layer 25 supply is recombinated that conductor layer 21 is supplied
Light.When the first conductive type semiconductor layer 21 is n-type semiconductor layer, supplied from the first conductive type semiconductor layer 21
Carrier can be electronics, when the second conductive type semiconductor layer 25 is p-type semiconductor layer, from the second conductive type semiconductor layer
The carrier of 25 supplies can be hole.
Although illustrating not in the drawings, light emitting diode can also include being located at the first conductive type semiconductor layer 21
Superlattice layer between active layer 23.Superlattice layer can stop the crystalline substance according to substrate 10 and the first conductive type semiconductor layer 21
Lattice constant difference and make transfer of the indexing (dislocation) for being formed in the first conductive type semiconductor layer 21 to active layer 23,
To improve the node quality of active layer 23.
The second conductive type semiconductor layer 25 can be located on active layer 23.The second conductive type semiconductor layer 25 include doped with
The semiconductor layer of the second conductive type dopant can be formed as single layer or multilayer.The second conductive type semiconductor layer 25 can
To be formed by GaN layer, InGaN layer, AlGaN layer, at least one of InAlGaN layers.When the second conductive type semiconductor layer 25 is p
When type semiconductor layer, the second conductive type dopant may include one in Mg, Zn, Ca, Sr, Ba as p-type dopant
Kind or more.
Other than the first conductive type semiconductor layer 21, active layer 23 and the second conductive type semiconductor layer 25, in order to carry
High crystalline quality, semiconductor layer stack 20 may include non-doped layer or other buffer layers, when the second conductive type semiconductor layer
25 when being p-type semiconductor layer, the current barrier layer that can such as be formed between active layer 23 and the second conductive type semiconductor layer 25
(not shown) include various functional layers.
Semiconductor layer stack 20 can utilize MOCVD (Metal Organic Chemical Vapor in the cavity
Depositin, metal-organic chemical vapor deposition equipment) technology growth is on substrate 10.However, the embodiment of the present invention and unlimited
Due to this, the semiconductor layer stack 20 can utilize MBE (Molecular Beam Epitaxy, molecular beam epitaxy), HVPE
Technology growths such as (Hydride Vapor Phase Epitaxy, hydride gas-phase epitaxies) are on the substrate 10.
The semiconductor layer stack 20 may include making a part of exposed table top erosion of the first conductive type semiconductor layer 21
Carve region 20a.The mesa etch region 20a can pass through one to the second conductive type semiconductor layer 25 and active layer 23
Divide and is etched and is formed.In addition, in the forming process of mesa etch region 20a, the one of the first conductive type semiconductor layer 21
Part can also be etched.Referring to Fig.1, mesa etch region 20a can from light emitting diode second side 2 and third side
The corner that face 3 is met has relatively wide shape along the part that second side 2 extends to the direction of first side 1.Table top
Etching area 20a can provide the region for being used to form aftermentioned first electrode 40.
Transparent electrode layer 30 can be located on the second conductive type semiconductor layer 25.Transparent electrode layer 30 is by metal oxide
The ohmic contact layer of formation, in particular, the second conductive type semiconductor layer 25 be p-type semiconductor layer when, by with the second conductive type
Semiconductor layer 25 forms Ohmic contact and can improve current spreading effect.
Light emitting diode according to the present invention may include ZnO transparent electrode layers 30.ZnO transparent electrode layers 30 and ITO is saturating
Prescribed electrode layer 30 is compared, and has the lower characteristic of absorptance.For example, it is assumed that when thickness having the same, ZnO transparent electrode layers 30
Light absorptance can be equivalent to ito transparent electrode layer 30 light absorptance it is 1/20 horizontal, as a result, by ZnO transparent electrode layers 30
The light quantity for absorbing and being lost may be smaller than ito transparent electrode layer 30.
ZnO transparent electrode layers 30 are due to that with the lower characteristic of absorptivity, can be formed as thicker thickness.With
The thickness for forming transparent electrode layer 30 thicker, can expect following effect.
First, the characteristic being inversely proportional to the thickness according to resistance value, when the thickness of transparent electrode layer 30 is formed as thicker,
The resistance value of transparent electrode layer 30 can become smaller.When the change of the resistance value of transparent electrode layer 30 is small, current spread is easier to, knot
The forward voltage (Vf) of fruit, light emitting diode can become smaller.When applying the electric current of same size, the forward voltage of light emitting diode
(Vf) smaller then power consumption can be smaller, as a result, the calorific value of light emitting diode can also become smaller.
In addition, when the thickness of transparent electrode layer 30 is formed as thicker, be conducive to be formed on 30 surface of transparent electrode layer
The process of bumps 31, also, the limitation of the size to being formed by bumps 31 may be smaller.On the surface of transparent electrode layer 30
A certain size the bumps 31 formed can reduce the total reflectivity of light to improve the light extraction efficiency of light emitting diode.In root
The bumps formed according to the surface of the ZnO transparent electrode layers 30 of the light emitting diode of the present application can be with the big of 50nm or more
It is small.However, in the case where such as ito transparent electrode layer is equally relatively thin for transparent electrode layer 30, can also be formed on its surface recessed
It is convex, but in this case, concave-convex formation process may be very intractable, and being formed by concave-convex size may be by the very day of one's doom
System.In the case of concave-convex limited size, the total reflection of light can not be efficiently reduced.
With reference to Fig. 2 and Fig. 3, although bumps 31 are formed in the surface of transparent electrode layer 30, have and be not formed at and second
The feature for the region alpha that electrode 50 connects.That is, bumps 31 can be on the surface of transparent electrode layer 30 in addition to second electrode pad 51
And other regions except the region alpha that is connected of second electrode extension 53 are formed.This is because in the table of transparent electrode layer 30
Face, when the region alpha for connecting second electrode 50 forms bumps, second electrode 50 is easy to remove from transparent electrode layer 30.Therefore, it is
The reliability of light emitting diode is improved, region alpha that the surface of transparent electrode layer 30 is connected with second electrode 50 can not wrap
Include bumps 31.
First electrode 40 can be located at by the first conductive type semiconductor layer 21 exposed mesa etch region 20a.The
One electrode 40 may include first electrode pad 41 and the first electrode extension 43 that extends from first electrode pad 41.Reference
Fig. 1, the mesa etch for the adjacent corners that first electrode pad 41 connects in the second side 2 of light emitting diode with third side 3
In the 20a of region, it can be located on the first conductive type semiconductor layer 21.In addition, first electrode extension 43 can be from first electrode
Pad 41 extends and extends to the direction of first side 1 along the second side of light emitting diode 2.
Second electrode 50 can be located on transparent electrode layer 30.That is, second electrode 50 can be located on transparent electrode layer 30,
And it is electrically connected with the second conductive type semiconductor layer 25.Second electrode 50 may include second electrode pad 51 and from second electricity
The second electrode extension 53 that pole pad 51 extends.Referring to Fig.1, second electrode pad 51 can be in the first side of light emitting diode
The adjacent corners that face 1 connects with the 4th side 4 are located on transparent electrode layer 30.In addition, second electrode extension 53 can be from
Two electrode pads 51 extend and extend to the direction of third side 3 along the 4th side 4 of light emitting diode.
First electrode pad 41 and second electrode pad 51 are for being electrically connected light emitting diode, for example, can be first
Electrode pad 41 and second electrode pad 51 are respectively formed wire bonding.By electric with first electrode pad 41 and second respectively
The lead that pole pad 51 is bonded, light emitting diode can be electrically connected with external device (ED), and can obtain power supply.According to first
The structure that two corners of electrode pad 41 and second electrode pad 51 on a light emitting diode configure face to face, can be effective
Realize current spread in ground.In addition, by first electrode extension 43 and second electrode extension 53, it can be in light emitting diode
Current spread is effectively realized, as a result, the output of light emitting diode can be improved.
It, can be by from golden (Au), silver-colored (Ag), aluminium although it's not limited to that for first electrode 40 and second electrode 50
(Al), copper (Cu) or at least one conductive material including being selected in these alloy are formed.Also, 40 He of first electrode
Second electrode 50 can be formed by identical process.
Fig. 4 to Figure 10 is schematically cuing open for the manufacturing method for illustrating light emitting diode according to an embodiment of the invention
Face figure.
With reference to Fig. 4, first prepared substrate 10, semiconductor layer stack 20 and transparent electrode are then formed on the substrate 10
Layer 30.Semiconductor layer stack 20 may include nitride semiconductor layer, and transparent electrode layer 30 may include ZnO transparent electrode layers
30.Semiconductor layer stack 20, for example, can be by configuring in the cavity substrate 10, and utilize MOCVD (Metal Organic
Chemical Vapor Depositin) technology and be grown on substrate 10.ZnO transparent electrode layers 30, can be by that will grow
There is the substrate 10 of semiconductor layer stack 20 to configure in the cavity, and utilizes hydrothermal synthesis (hydrothermal synthesis) skill
Art and be grown in the semiconductor layer stack 20.ZnO transparent electrode layers 30 and 20 phase of semiconductor layer stack being disposed below
There is together buergerite (wurtzite) crystalline texture.
With reference to Fig. 5, the first mask 60 is formed on transparent electrode layer 30.First mask 60 may include making transparent electrode layer
30 a part of the first exposed opening portion 60a.
With reference to Fig. 6 a to Fig. 6 c, transparent electrode layer 30 can be etched using the first opening portion 60a of the first mask 60.
Light emitting diode according to the present invention includes ZnO transparent electrode layers 30, and ZnO has the characteristic very fragile to acid.It therefore, can be with
Wet etching is carried out using the acid solution transparent electrode layer 30 exposed to the first opening portion 60a by the first mask 60.
In this case, in the wet etching, transparent electricity can be controlled by controlling the ph values of acid solution
The gradient that the end of pole layer 30 is formed with the upper surface of the second conductive type semiconductor layer 25.For example, lower using ph values
When strongly acidic solution wet etching ZnO transparent electrode layers 30, as shown in Figure 6 a, the end of ZnO transparent electrode layers 30 can be formed
It is formed by the reversed-trapezoid structure 30a that angle is obtuse angle with the upper surface of the second conductive type semiconductor layer 25.When ZnO transparent electrode layers
When 30 end has reversed-trapezoid structure 30a, light extraction efficiency may be very good.That is, having in the end of ZnO transparent electrode layers 30
When having reversed-trapezoid structure 30a, the total reflection on the surface of ZnO transparent electrode layers 30 and towards the end of ZnO transparent electrode layers 30
Light is no longer totally reflected and is projected to outside.
On the contrary, when weakly acidic solution wet etching ZnO transparent electrode layers 30 higher using ph values, as fig. 6 c,
It is acute angle that the end that ZnO transparent electrode layers 30 can be formed and the upper surface of the second conductive type semiconductor layer 25, which are formed by angle,
Mesa structure (30c).Also, when using ph values acid solution wet etching ZnO transparent electrode layers 30 therebetween, such as scheme
Shown in 6b, the end and the upper surface of the second conductive type semiconductor layer 25 that can form ZnO transparent electrode layers 30 are formed by angle
For the structure (30b) at right angle.It, may in terms of electrology characteristic when the end of ZnO transparent electrode layers 30 has mesa structure 30c
It can be more more effective than reversed-trapezoid structure 30a.That is, when the end of ZnO transparent electrode layers 30 has mesa structure 30c, the transparent electricity of ZnO
The area that pole layer 30 is contacted with the second conductive type semiconductor layer 25 may be more wider than reversed-trapezoid structure 30a, therefore can be more
Effectively realize current spread.
With reference to Fig. 7, in Fig. 6 a to Fig. 6 c by semiconductor layer stack 20 that the etching of transparent electrode layer 30 is exposed
A part be etched, so as to form mesa etch region 20a.Mesa etch region 20a can pass through dry-etching
Method is formed.Specifically, utilizing the first opening portion 60a and utilization sputter etching, reactive ion etching, gas phase of the first mask 60
The methods of etching is etched the second conductive type semiconductor layer 25 and active layer 23, so as to so that the first conductive type semiconductor
Layer 21 is exposed.In this case, a part for the first conductive type semiconductor layer 21 can also be etched.With reference to Fig. 7, table top erosion
Carving the side of region 20a can be formed obliquely.
With reference to Fig. 8, the second mask 70 can be formed on transparent electrode layer 30 and mesa etch region 20a.Second mask
70 may include the second opening portion 70a.Second opening portion 70a can be formed as multiple.For example, one in the second opening portion 70a
It is a to make a part of exposed of transparent electrode layer 30 on transparent electrode layer 30 also, another in the second opening portion 70a
One can make a part of exposed of the first conductive type semiconductor layer 21 on the 20a of mesa etch region.
With reference to Fig. 9, the second opening portion 70a of the second mask 70 can be utilized to form first electrode 40 and second electrode
50.Although only disclosing the first electrode extension 43 formed using the second opening portion 70a in fig.9, can fully analogize
Same method can be utilized to form first electrode pad 41, second electrode pad 51 and second electrode extension 53.Also,
Although attached drawing illustrates only first electrode extension 43, but common lift-off technology can be utilized to form first electrode 40 and second
Electrode 50.
Referring to Fig.1 0, it can form bumps 31 on the surface of transparent electrode layer 30.Specifically, acid solution can be used
The surface of transparent electrode layer 30 is etched and forms bumps 31.May include according to the light emitting diode of the present application
ZnO transparent electrodes 30, as described above, the thickness of ZnO transparent electrode layers 30 can be made to be formed due to lower optical absorption characteristics
It is thicker.That is, ZnO transparent electrode layers 30 can have can its surface include bumps 31 degree enough thickness.ZnO
With the characteristic very fragile to acid.Therefore, ZnO transparent electrodes are handled by using the acid solution short time for diluting more
The method of layer 30 can be formed on its surface bumps 31, and can be controlled according to the concentration of its processing time and acid solution
The size of bumps 31.It is, for example, possible to use showing 1000 greatly:1 dilution proportion obtains the more acid solution processing transparent electricity of ZnO
Pole layer 30 about 40 seconds or so, and it is formed on its surface bumps 31.The bumps 31 formed by this method can have about 50nm
Above size.
Since the formation process of bumps 31 is implemented after the formation process of second electrode 50, it is being connected with the second electricity
The surface of the transparent electrode layer 30 of the part of pole pad 51 and second electrode extension 53 can not form concave-convex 31 patterns.It is this
Feature is disclosed by Fig. 3 above-mentioned.I.e., it is possible to the transparent electrode other than the part in addition to being formed with second electrode 50
Remaining region of layer 30 forms bumps 31.If forming bumps 31 on the surface for the transparent electrode layer 30 being connect with second electrode 50
Pattern, then since second electrode 50 is easy to remove from transparent electrode layer 30, in the transparent electrode for being connected with second electrode 50
The surface of layer 30 does not form concave-convex 31 patterns.
Figure 11 a to Figure 11 c show the manufacturing method and filament hair of the filament light-emitting module of an embodiment according to the present invention
Optical module.
1a referring to Fig.1 prepares supporting substrate 310 first.Supporting substrate 310 can be by glass, hard glass, quartzy glass
The formation such as glass, crystalline ceramics or plastics.Alternatively, supporting substrate 310 can be according to an embodiment and by flexible (flexible)
Material is formed.The both ends of supporting substrate 310 can be respectively provided with electrode 320.The electrode 320 is used for filament light-emitting module
300 supply external powers.The electrode 320 can be fixed on supporting substrate 310 by adhesive etc..
Although disclosing supporting substrate 310 in fig. 11 a has the situation of linear type bar (bar) shape, do not limit to
In this.That is, at least part region of supporting substrate 310 may include curve shape.Supporting substrate 310 can be formed to have
Curve shape, alternatively, the supporting substrate 310 of linear type rod-shape can be formed by flexible (flxible) material and make at least one
Partially due to external force can be deformed into curve shape.Due to the supporting substrate 310 of curve shape, such as Figure 13 can be produced extremely
Variously-shaped filament light-emitting module 300 shown in 15.
1b referring to Fig.1 can mount at least one light emitting diode 330 on the supporting substrate 310.It is mounted on filament
The light emitting diode 330 of light emitting module 300 is relatively small, hereby it is possible to be driven under higher current density condition, to
The heat of high temperature is generated in each light emitting diode.In addition, the light emitting diode 330 for being mounted on filament light-emitting module 300 can be with
Very high Density and distribution.That is, the distance between light emitting diode 330 is possible to relatively very small, therefore in unit area
The heat of middle generation may be very big.In this case, filament light-emitting module 300 is possible to because more caused by itself
Heat and be damaged.
Therefore, may include including Fig. 1 of ZnO transparent electrode layers 30 according to the filament light-emitting module 300 of the present application
To light emitting diode shown in Fig. 10.As described above, the light emitting diode comprising ZnO transparent electrode layers 30 can be with relatively low
Forward voltage (Vf) driving, therefore with the less feature of calorific value.Therefore, include luminous the two of ZnO transparent electrode layers 30
Pole pipe can be driven under high current densities, and be suitable for the filament light-emitting module configured to high-density.
Referring again to Figure 11 b, multiple light emitting diodes 330 can be electrically connected by lead 331.Although showing in Figure 11 b
Go out the situation that multiple light emitting diodes 330 are connected in series with by lead 331, but this cannot be understood to be the limit to embodiment
System.That is, according to other embodiment, multiple light emitting diodes 330 can also be connected in parallel or series/parallel connection.Multiple hairs
The light emitting diode 330 positioned at outermost in optical diode 330 can be electrically connected by the electrode 320 and lead 331.
In addition, supporting substrate 310 may include electric wiring (not shown), at this point, each light emitting diode is not required for
By the bonding of lead 331.That is, in this case, the electricity that each light emitting diode can be included by supporting substrate 310
Gas is connected up (not shown) and is electrically connected in a manner of series/parallel connection.
1c referring to Fig.1 can be formed and be covered the supporting substrate 310 for being pasted at least one light emitting diode 330
Wavelength conversion layer 340.Wavelength conversion layer 340 can cover a part for electrode 320 to improve the stability of structure.Wavelength
Conversion layer 340 includes fluorophor, and fluorophor can make the wavelength of the light from light emitting diode change.Wavelength conversion layer
340 may include the fluorophor combination of various combinations, so as to control the wavelength of the light sent out from filament light-emitting module 300.
Figure 12 to Figure 15 shows the various embodiments of filament light-emitting diode lights according to the present invention.
Referring to Fig.1 2 to Figure 15, filament light-emitting diode lights can include lamp holder portion 100, transparency cover 200 and lamp simultaneously
Silk light emitting module 300.In addition, filament light-emitting diode lights can also include wiring portion 400 and supporter 500.
Lamp holder portion 100 can be made of electric conductor, can be connect and be played to the filament light-emitting module with external device (ED)
300 effects supplied electric power.
Transparency cover 200 can be made of the transparent material that light can be made to penetrate, and lower end can be with the lamp holder portion
100 are connected and fixed.Transparency cover 200 can be make light spread and to the light diffuser cap of external emission, therefore, filament light-emitting diode
Lamp can have wider direction angle.In addition, transparency cover 200, which can play, protects filament light-emitting module 300 on its interior
Effect.If the shape of Figure 12 to the transparency cover 200 shown in figure 15 can be open and approximately spherical with its lower end
Shape, it is not limited to this.
Filament light-emitting module 300 may include multiple light emitting diodes.In addition, filament light-emitting module 300 can also include
Supporting substrate, electrode and wavelength conversion layer.Multiple light emitting diodes are mounted on supporting substrate, and can to connect respectively,
In parallel or in series/mode in parallel is electrically connected.
Filament light-emitting module 300 includes filament light-emitting module 300 shown in Figure 11 a to Figure 11 c, filament light-emitting module 300
Including multiple light emitting diodes may include Fig. 1 to light emitting diode shown in Fig. 10.That is, filament light-emitting module 300 can
With including above-mentioned ZnO transparent electrode layers, and may include that can be driven with lower forward voltage and hair that calorific value is less
Optical diode.Accordingly, heat caused by filament light-emitting module 300 itself may be less, therefore, the danger being damaged by high temperature
Performance is enough less.
In contrast, filament light-emitting module includes by with the transparent of relatively thin thickness formation according to prior art
Electrode layer and light emitting diode with relatively high forward voltage, therefore generating due to higher calorific value makes filament send out
The problem of optical module is damaged and reduces reliability.Therefore, the higher gas of and thermal conductivity small using viscosities such as such as helium and
By the heat dissipation generated in filament light-emitting module to outside.That is, using viscosity is low and the higher gas of thermal conductivity
It is filled into inside transparency cover, and will be from the heat dissipation that filament light-emitting module generates to outside using the convection current of the gas
Method.
However, according to the filament light-emitting module 300 of the present application due to the lower spy of the forward voltage of light emitting diode
Property, and keep self-heating amount less, therefore have the advantages that not having to include other gases for heat dissipation in transparency cover 200.
Accordingly, gas is not included according to the filament light-emitting diode lights of the present application, therefore in manufacturing expense and manufacturing process
Advantage, and the less-restrictive that is subject to when selecting the material and shape of transparency cover.For example, transparency cover 200 can be close
Envelope, inside can keep the vacuum state not comprising gas.As another example, transparency cover 200 may include being communicated with the outside
Opening portion, air can be filled with inside transparency cover 200.
Wiring portion 400 plays the role of filament supports light emitting module 300, and can play filament light-emitting module 300
It is electrically connected to the effect in lamp holder portion 100.One end of wiring portion 400 is connected to the electrode portion of filament light-emitting module 300, and the other end can
To be connected to lamp holder portion 100.
Supporter 500 can play the role of the support wiring portion 400 and the filament light-emitting module 300.Support
Body 500 can be fixed on lamp holder portion 100, and a part of of the wiring portion 400 can pass through the structure through the supporter 500
And it is fixed on supporter 500.
Although also, in the accompanying drawings without open, filament light-emitting diode lights can also include for controlling filament
The driving portion of the driving of light emitting module.The driving portion can control single filament light emitting module or series/parallel connection
The driving of multiple filament light-emitting modules.The driving portion can be located at the space inside lamp holder portion 100.
According to individual research, filament light-emitting diode lights shown in Figure 12 include two linear type filament light emitting modules
300a, 300b, described two linear type filament light emitting module 300a, 300b have the structure being connected in series with.However, this cannot be managed
The restriction to be to embodiment is solved, therefore filament light-emitting diode lights may include the lamp of one, three, four etc. a variety of quantity
Silk light emitting module 300.In addition, multiple filament light-emitting modules 300 can not only have the structure being connected in series with, can also have simultaneously
Connection connection, series/parallel connection structure.In addition, multiple filament light-emitting modules 300 can have the shadow that can make to generate mutually
The various configuration structures that son minimizes.
Filament light-emitting diode lights shown in Figure 13 include a curved shape filament light-emitting module 300, and with filament hair
The structure that the both ends of optical module 300 are connect with wiring portion 400.Furthermore it is also possible to include for fixing filament light-emitting module 300
In the lead 510 of supporter 500.
Filament light-emitting diode lights shown in Figure 14 may include two filament light-emitting modules 300a, 300b, each filament
Light emitting module 300a, 300b may include linearity region and curve regions.
Filament light-emitting diode lights shown in figure 15 include a coiled-coil filament light emitting module 300, and with filament hair
Optical module 300 is helically rotated and is surrounded the structure of supporter 500 centered on supporter 500.
Claims (17)
1. a kind of light emitting diode, which is characterized in that including：
Semiconductor layer stack, including the first conductive type semiconductor layer, the second conductive type semiconductor layer and led between described first
Active layer between electric type semiconductor layer and the second conductive type semiconductor layer；
ZnO transparent electrode layers are located on the second conductive type semiconductor layer；
First electrode is connect with the first conductive type semiconductor layer；And
Second electrode is connect with the ZnO transparent electrode layers,
The surface of the ZnO transparent electrode layers includes the part for being confined to not form the second electrode and the bumps formed.
2. light emitting diode according to claim 1, which is characterized in that
The upper surface of the end of the ZnO transparent electrode layers and the second conductive type semiconductor layer be formed by angle be right angle or
Acute angle.
3. light emitting diode according to claim 1, which is characterized in that
It is obtuse angle that the end of the ZnO transparent electrode layers and the upper surface of the second conductive type semiconductor layer, which are formed by angle,.
4. light emitting diode according to claim 1, which is characterized in that
The semiconductor layer stack includes making a part of exposed mesa etch region of the first conductive type semiconductor layer,
The first electrode is connected in the mesa etch region with the first conductive type semiconductor layer.
5. light emitting diode according to claim 1, which is characterized in that
The first electrode includes first electrode pad and the first electrode extension that extends from the first electrode pad,
The second electrode includes second electrode pad and the second electrode extension that extends from the second electrode pad.
6. a kind of filament light-emitting diode lights, which is characterized in that including：
Lamp holder portion；
Transparency cover is fixed on the lamp holder portion；And
At least one filament light-emitting module is located in the transparency cover, and is connect with the lamp holder portion,
At least one filament light-emitting module includes multiple light emitting diodes,
Each light emitting diode includes：
Semiconductor layer stack, including the first conductive type semiconductor layer, the second conductive type semiconductor layer and led between described first
Active layer between electric type semiconductor layer and the second conductive type semiconductor layer；
ZnO transparent electrode layers are located on the second conductive type semiconductor layer；
First electrode is connect with the first conductive type semiconductor layer；And
Second electrode is connect with the ZnO transparent electrode layers,
The surface of the ZnO transparent electrode layers includes the part for being confined to not form the second electrode and the bumps formed.
7. filament light-emitting diode lights according to claim 6, which is characterized in that
The upper surface of the end of the ZnO transparent electrode layers and the second conductive type semiconductor layer be formed by angle be right angle or
Acute angle.
8. filament light-emitting diode lights according to claim 6, which is characterized in that
It is obtuse angle that the end of the ZnO transparent electrode layers and the upper surface of the second conductive type semiconductor layer, which are formed by angle,.
9. filament light-emitting diode lights according to claim 6, which is characterized in that
The semiconductor layer stack includes making a part of exposed mesa etch region of the first conductive type semiconductor layer,
The first electrode is connected in the mesa etch region with the first conductive type semiconductor layer.
10. filament light-emitting diode lights according to claim 6, which is characterized in that
The first electrode includes first electrode pad and the first electrode extension that extends from the first electrode pad,
The second electrode includes second electrode pad and the second electrode extension that extends from the second electrode pad.
11. filament light-emitting diode lights according to claim 6, which is characterized in that
It further include the driver of the driving for controlling at least one filament light-emitting module.
12. filament light-emitting diode lights according to claim 11, which is characterized in that
It further include the supporter at least one filament light-emitting module to be fixed on to the lamp holder portion.
13. filament light-emitting diode lights according to claim 6, which is characterized in that
The filament light-emitting module further includes：
Supporting substrate；And
Electrode positioned at the both ends of the supporting substrate,
The multiple light emitting diode is mounted on the supporting substrate.
14. filament light-emitting diode lights according to claim 13, which is characterized in that
The filament light-emitting module further includes the wavelength conversion layer that covering is pasted with the supporting substrate of the multiple light emitting diode.
15. filament light-emitting diode lights according to claim 13, which is characterized in that
The supporting substrate has linear type rod-shape.
16. filament light-emitting diode lights according to claim 13, which is characterized in that
The supporting substrate includes at least part of curve regions.
17. filament light-emitting diode lights according to claim 6, which is characterized in that
The inside of the transparency cover is vacuum state.
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| KR10-2017-0028455 | 2017-03-06 | ||
| KR1020170028455A KR20180101908A (en) | 2017-03-06 | 2017-03-06 | Light emitting diode and filament light emitting diode lamp including the light emitting diode |
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| CN201720364344.XU Expired - Fee Related CN206727099U (en) | 2017-03-06 | 2017-04-07 | Light emitting diode and the filament light-emitting diode lights including the light emitting diode |
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|---|---|---|---|---|
| WO2010143360A1 (en) * | 2009-06-11 | 2010-12-16 | パナソニック株式会社 | Organic el display |
| CN102447027A (en) * | 2011-12-16 | 2012-05-09 | 北京工业大学 | Vertical structure type light-emitting diode with high light extraction window |
| CN203644774U (en) * | 2013-12-24 | 2014-06-11 | 深圳市研一科技有限公司 | LED bulb |
| CN105144415A (en) * | 2012-12-28 | 2015-12-09 | 日进Led有限公司 | Nitride semiconductor light-emitting device and method of manufacturing same |
| CN106256026A (en) * | 2014-04-22 | 2016-12-21 | 首尔伟傲世有限公司 | Light emitting diode and manufacture method thereof |
| CN206727099U (en) * | 2017-03-06 | 2017-12-08 | 首尔伟傲世有限公司 | Light emitting diode and the filament light-emitting diode lights including the light emitting diode |
-
2017
- 2017-03-06 KR KR1020170028455A patent/KR20180101908A/en unknown
- 2017-04-07 CN CN201710225010.9A patent/CN108538985A/en active Pending
- 2017-04-07 CN CN201720364344.XU patent/CN206727099U/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010143360A1 (en) * | 2009-06-11 | 2010-12-16 | パナソニック株式会社 | Organic el display |
| CN102447027A (en) * | 2011-12-16 | 2012-05-09 | 北京工业大学 | Vertical structure type light-emitting diode with high light extraction window |
| CN105144415A (en) * | 2012-12-28 | 2015-12-09 | 日进Led有限公司 | Nitride semiconductor light-emitting device and method of manufacturing same |
| CN203644774U (en) * | 2013-12-24 | 2014-06-11 | 深圳市研一科技有限公司 | LED bulb |
| CN106256026A (en) * | 2014-04-22 | 2016-12-21 | 首尔伟傲世有限公司 | Light emitting diode and manufacture method thereof |
| CN206727099U (en) * | 2017-03-06 | 2017-12-08 | 首尔伟傲世有限公司 | Light emitting diode and the filament light-emitting diode lights including the light emitting diode |
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| CN206727099U (en) | 2017-12-08 |
| KR20180101908A (en) | 2018-09-14 |
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Application publication date: 20180914 |