CN206649081U - The floated probe capacitance probe of semi insulating semiconductor resistivity gas control - Google Patents
The floated probe capacitance probe of semi insulating semiconductor resistivity gas control Download PDFInfo
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- CN206649081U CN206649081U CN201720346960.2U CN201720346960U CN206649081U CN 206649081 U CN206649081 U CN 206649081U CN 201720346960 U CN201720346960 U CN 201720346960U CN 206649081 U CN206649081 U CN 206649081U
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Abstract
The utility model discloses a kind of floated probe capacitance probe of semi insulating semiconductor resistivity gas control, including test circuit, test electrode, shell, test electrode is connected by flexible circuit conductor with test circuit, bottom inside the housing is provided with an entity axis, nitrogen transfer passage, electrode suspension passage are provided with axis, nitrogen transfer passage one end communicates with the bottom of electrode suspension passage, and electrode suspension passage is Vertical Channel, and test electrode is placed in one；Pressure control valve is provided with nitrogen course of conveying, the valve is connected with the control circuit outside probe.Before measuring, pressure control valve is adjusted according to pressure value set in advance, the nitrogen of certain pressure is transported between test electrode and sample, test electrode is suspended in predetermined altitude under pressure.The utility model can realize that the distance that electrode distance sample surfaces are tested during test is always consistent, so as to more directly perceived and reflection material exactly overall performance.
Description
Technical field
Semi insulating semiconductor material electrical parameter testing research field is the utility model is related to, it is more particularly to a kind of semi-insulating
The floated probe capacitance probe of semiconductor resistor rate gas control.
Background technology
Semi insulating semiconductor be grow up after first generation semi-conducting material Si second generation semi-conducting material GaAs,
InP and third generation semi-conducting material, such as SiC, GaN, there is broad-band gap, high critical breakdown electric field, high heat conductance, high carrier
The features such as saturated concentration, capability of resistance to radiation are strong, dielectric constant is small, be suitable for preparing high temperature, high frequency, powerful electronic device and
Microwave, the photoelectric device of excellent performance, are with a wide range of applications.
Research for any semiconductor substance, resistivity are all a very important foundations, are research and development, production process
In the important basic electricity parameter that must measure.Monoblock (ingot) or the resistivity distribution situation of full wafer semiconductor crystalline material can
Completely truly reflect the quality of material.
With the continuous improvement of semi insulating semiconductor material production technology, material diameter currently on the market constantly becomes
Greatly, current 6 inches of silicon carbide wafer commercialization.The chip of major diameter is produced, cutting technique is required also increasingly
Height, but the surface of chip two that can not be completely secured after cutting is substantially parallel, that is to say, that and the thickness of chip is incomplete
Uniformly, in standard GB/T/T 30656-2014, to the regulation of the geometric parameter of semi insulating semiconductor, half for 4 inches
Insulator-semiconductor chip, the angularity allowed have been loosened to no more than 45 μm, well imagined, when wafer size reaches 6 English
When very little, the angularity of chip will be bigger.Test probe used by due to existing semi insulating semiconductor tester, test electrode are
Fixed, when carrying out resistivity measurement, it is minimum to test the distance of electrode and sample room, generally 30 μm to 80 μm it
Between, if wafer thickness is uneven, when carrying out multi-point scanning measurement (referring to patent CN2015206620671), in probe
Distance between test electrode and chip is change, and it is inconsistent so to may result in measuring condition, influences whole measurement result.
Accordingly, it is desirable to provide it is a kind of can accurate measurement large-diameter material, measuring electrode and sample interval from can keep permanent
Fixed semi insulating semiconductor resistivity measurement probe.
Utility model content
The shortcomings that the purpose of this utility model is to overcome prior art and deficiency, there is provided a kind of semi insulating semiconductor resistance
The floated probe capacitance probe of rate gas control, electrode is with sample interval from that can keep constant when testing in the probe, and measurement result is more
Accurately.
The purpose of this utility model is realized by following technical scheme：A kind of semi insulating semiconductor resistivity gas control suspends
Formula probe capacitance probe, including test circuit, test electrode, shell, test electrode are connected by flexible circuit conductor with test circuit,
The bottom of enclosure is provided with an entity axis, and protection gas transfer passage, electrode suspension passage, the protection are provided with axis
Gas transfer passage one end is connected with the protection gas supply system of outside, and the other end communicates with the bottom of electrode suspension passage, described
Electrode suspension passage is Vertical Channel, and through axis, test electrode is placed in one；Stress control is provided with protection gas course of conveying
Valve, the valve are connected with the control circuit outside probe；During test, under the pressure effect of protection gas, test electrode can
Suspend certain height in electrode suspension passage.
Preferably, the electrode suspension passage is provided with two bushings, a top for being arranged on electrode suspension passage, separately
One is arranged on nitrogen transfer passage and communicates place with electrode suspension passage.For ensureing that test electrode moves in vertical direction.
Further, the lagging material is ruby.It has the advantages of dimensionally stable, precision is high, and material is hard
It is wear-resisting.
Preferably, the protection gas supply system and protecting is provided between gas transfer passage seals be connected straight-through and connects successively
Head, connection short tube, 90 ° of bent subs, described straight coupling one end are arranged on housing exterior, pass through pipeline and protection gas supply system
It is connected, one end and the protection gas transfer passage of 90 ° of bent subs are tightly connected.
Preferably, the shell includes side wall of outer shell, package header, and is arranged on the upper cover plate and lower cover of upper and lower ends
Plate, four surround a cavity, and axis is arranged in package header；Counter electrode suspension channel position also is provided with hanging down on lower cover
Clear opening is so that test electrode stretches out；Openable side installing plate is provided with side wall of outer shell.Using this structure, it is easily installed
And maintenance.
Further, the shell is formed using metal material processing, so as to realize good electromagnetic shielding effect
Fruit.
Preferably, the solid copper pole that the test electrode is diameter 0.8mm~1.5mm.
Preferably, the protection gas can use nitrogen, can also use dry compressed air etc..Role has two
Individual, one is that protection is formed between electrode and sample.Another is to be used to make test electrode under air reaction force acts
Suspend.
The utility model compared with prior art, has the following advantages that and beneficial effect：
Test electrode in the utility model test probe, suspension can be blown in the presence of nitrogen pressure reflectivity
State, the pressure of nitrogen is adjusted, the different height of test electrode suspension can be made, for the sample with Different Plane degree, tested
During, the distance of test electrode distance sample surfaces can be always consistent.So as to which the semi-insulator of major diameter half can be realized
Conductor resistivity of material measures, overall performance that is directly perceived and reflecting material exactly.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the partial enlarged drawing at A in Fig. 1.
Fig. 3 is gas flow schematic diagram of the present utility model.
Fig. 4 is test electrode schematic diagram of movements of the present utility model.
In Fig. 1-4,1-test circuit, 201-side wall of outer shell, 202-package header, 203-upper cover plate, 204-lower cover
Plate, 205-side installing plate, 301-straight coupling, 302-connection short tube, 303-90 ° of bent subs, 4-axis, 5-nitrogen are defeated
Send passage, 6-electrode suspension passage, 7-test electrode, 8-ruby bushing, 9-sample, 10-sample stage.
Embodiment
The utility model is described in further detail with reference to embodiment and accompanying drawing, but implementation of the present utility model
Mode not limited to this.
Embodiment 1
As shown in figure 1, a kind of semi insulating semiconductor resistivity adaptive testing probe, including test circuit, test electrode,
Shell, test electrode are connected by flexible circuit conductor with test circuit, and bottom inside the housing is provided with an entity axis, in axis
Provided with nitrogen transfer passage, electrode suspension passage, described nitrogen transfer passage one end is connected with the nitrogen supply (NS) system of outside, separately
One end is communicated with the bottom of electrode suspension passage, and the electrode suspension passage is Vertical Channel, and through axis, test electrode is placed in
Wherein；Pressure control valve is provided with the nitrogen course of conveying, the valve is connected with the control circuit outside probe；Surveying
During examination, under the pressure effect of nitrogen, test electrode can suspend certain height in electrode suspension passage.
In the present embodiment, shell is formed using metal material processing, including side wall of outer shell, package header, and is set
In the upper cover plate and lower cover of upper and lower ends, side wall of outer shell both ends are connected with upper cover plate and package header respectively, lower cover with it is outer
The other end connection of shell pedestal, axis are placed in package header, and axis central opening both ends are respectively embedded into a ruby bushing, its
Structure is referring to Fig. 2.Counter electrode suspension channel position also is provided with vertical through hole so that test electrode stretches out on lower cover；Outside
Shell side wall is provided with openable side installing plate.
In the present embodiment, passage between nitrogen supply (NS) system and nitrogen transfer passage be provided with seal successively be connected it is straight
Pass joint, connection short tube, 90 ° of bent subs, straight coupling are placed in shell side, are connected by pipeline with nitrogen supply (NS) system, 90 °
Bent sub and the eccentric orfice of axis upper surface are connected through a screw thread, and are communicated with nitrogen transfer passage.
In the present embodiment, the solid copper pole that electrode is diameter 0.8mm~1.5mm is tested.Electrode one end is tested with surveying
Circuit connection is tried, the sample surface charge variable signal collected is sent to test circuit by test electrode.
The method of testing of test probe, comprises the following steps in the present embodiment：
(1) before testing, according to many experiments, pressure and test electrode hoverheight are established by modes such as fitting or interpolation
Between relational expression.
Meanwhile determining that all kinds sample needs the predetermined altitude to suspend, it is obtained by following step：For each
Class a, there is provided standard sample, during test, progressively adjust the distance between electrode and standard sample, the signal of electrode collection passes through
After charge amplifier amplification, according to the signal magnitude which determines apart from optimal.
Search current sample and obtain the predetermined altitude that current test electrode needs to suspend；According to predetermined altitude, substitute into above-mentioned
Relational expression obtains pressure adjusted value.
(2) control test probe is moved to the one of measurement point of sample, controller adjustment pressure control valve, will press
Power is transported between test electrode and sample in the protection gas of pressure adjusted value；Tested after electrode position to be tested is stable；
(3) repeat step (2), until all measurement points are completed to test.
As shown in Figure 3,4, because print thickness distribution is irregular, when electrode bottom is nearer from print surface, gas channel
Narrow, the pressure for lifting probe upwards increases, and electrode rises；When electrode bottom from print surface farther out when, gas channel broadens,
The pressure of probe bottom is reduced, electrode declines.
Above-described embodiment is the preferable embodiment of the utility model, but embodiment of the present utility model is not by above-mentioned
The limitation of embodiment, it is other it is any without departing from Spirit Essence of the present utility model with made under principle change, modify, replace
Generation, combination, simplify, should be equivalent substitute mode, be included within the scope of protection of the utility model.
Claims (8)
1. a kind of floated probe capacitance probe of semi insulating semiconductor resistivity gas control, it is characterised in that including test circuit, survey
Electrode, shell are tried, test electrode is connected by flexible circuit conductor with test circuit, and bottom inside the housing is provided with an entity axis,
Protection gas transfer passage, electrode suspension passage, described protection gas transfer passage one end and outside protection gas are provided with axis
Supply system is connected, and the other end communicates with the bottom of electrode suspension passage, and the electrode suspension passage is Vertical Channel, in running through
Axle, test electrode are placed in one；Pressure control valve, the valve and the control outside probe are provided with protection gas course of conveying
Circuit is connected；During test, under the pressure effect of protection gas, test electrode can suspend certain height in electrode suspension passage
Degree.
2. the floated probe capacitance probe of semi insulating semiconductor resistivity gas control according to claim 1, it is characterised in that
The electrode suspension passage is provided with two bushings, and a top for being arranged on electrode suspension passage, another is arranged on nitrogen
Transfer passage communicates place with electrode suspension passage.
3. the floated probe capacitance probe of semi insulating semiconductor resistivity gas control according to claim 2, it is characterised in that
The lagging material is ruby.
4. the floated probe capacitance probe of semi insulating semiconductor resistivity gas control according to claim 1, it is characterised in that
It is described protection gas supply system and protection gas transfer passage between be provided with seal successively the straight coupling being connected, connection short tube, 90 °
Bent sub, described straight coupling one end are arranged on housing exterior, are connected by pipeline with protection gas supply system, 90 ° of bent subs
One end be tightly connected with protection gas transfer passage.
5. the floated probe capacitance probe of semi insulating semiconductor resistivity gas control according to claim 1, it is characterised in that
The shell includes side wall of outer shell, package header, and is arranged on the upper cover plate and lower cover of upper and lower ends, and four surround
Chamber, axis are arranged in package header；Counter electrode suspension channel position also is provided with vertical through hole so that test on lower cover
Electrode stretches out；Openable side installing plate is provided with side wall of outer shell.
6. the floated probe capacitance probe of semi insulating semiconductor resistivity gas control according to claim 5, it is characterised in that
The shell is formed using metal material processing.
7. the floated probe capacitance probe of semi insulating semiconductor resistivity gas control according to claim 1, it is characterised in that
The solid copper pole that the test electrode is diameter 0.8mm~1.5mm.
8. the floated probe capacitance probe of semi insulating semiconductor resistivity gas control according to claim 1, it is characterised in that
The protection gas uses nitrogen, or the compressed air dried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720346960.2U CN206649081U (en) | 2017-04-01 | 2017-04-01 | The floated probe capacitance probe of semi insulating semiconductor resistivity gas control |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720346960.2U CN206649081U (en) | 2017-04-01 | 2017-04-01 | The floated probe capacitance probe of semi insulating semiconductor resistivity gas control |
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| Publication Number | Publication Date |
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| CN206649081U true CN206649081U (en) | 2017-11-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720346960.2U Active CN206649081U (en) | 2017-04-01 | 2017-04-01 | The floated probe capacitance probe of semi insulating semiconductor resistivity gas control |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106771626A (en) * | 2017-04-01 | 2017-05-31 | 广州市昆德科技有限公司 | The floated probe capacitance probe of semi insulating semiconductor resistivity gas control and method of testing |
-
2017
- 2017-04-01 CN CN201720346960.2U patent/CN206649081U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106771626A (en) * | 2017-04-01 | 2017-05-31 | 广州市昆德科技有限公司 | The floated probe capacitance probe of semi insulating semiconductor resistivity gas control and method of testing |
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