CN206627062U - A kind of single-chip twin shaft magneto-resistor angular transducer - Google Patents
A kind of single-chip twin shaft magneto-resistor angular transducer Download PDFInfo
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- CN206627062U CN206627062U CN201720165912.3U CN201720165912U CN206627062U CN 206627062 U CN206627062 U CN 206627062U CN 201720165912 U CN201720165912 U CN 201720165912U CN 206627062 U CN206627062 U CN 206627062U
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Abstract
The utility model discloses a kind of single-chip twin shaft magneto-resistor angular transducer,Including the substrate on X Y planes,Push-pull type X-axis and push-pull type Y-axis magneto-resistor angular transducer on substrate,The former includes X push arms and X draws bow,The latter includes Y push arms and Y draws bow,The X push arms,X draws bow,Y push arms and Y, which draw bow, includes at least one magneto-resistor angle sensor cell array,The X push arms,X draws bow,Y push arms,The magnetic-field-sensitive direction for the magneto-resistor angle sensor cell array that Y draws bow is respectively along +X direction,X-direction,+Y direction,Y-direction,Magneto-resistor angle sensor unit is respectively provided with TMR the or GMR Spin Valves of same magnetic multi-layer film structure,Its inverse ferric magnetosphere direction of magnetization is obtained by laser program-controlled heating magnetic anneal,Also field decay layer can be deposited in magneto-resistor angle sensor cell surface to improve operating fields scope.The utility model has a compact-sized, high accuracy, small size, and the advantages of significantly magnetic field working range can be realized.
Description
Technical field
Magnetic sensor field is the utility model is related to, more particularly to a kind of single-chip twin shaft magneto-resistor angular transducer.
Background technology
Twin shaft angular transducer, for measuring two orthogonal directions such as X and Y-direction external magnetic field angle information, Ke Yiyong
In magnet-wheel tachometric survey, or for encoder angular measurement, it is widely used in magnetic sensor designs field.
Twin shaft magneto-resistor angular transducer includes two single shaft magneto-resistor angular transducers of X and Y, each single shaft X or Y magnetoelectricities
Angular transducer generally use push-pull type bridge structure is hindered to strengthen the signal output of magneto-resistor angular transducer, and push-pull type is electric
Bridge includes pushing away magneto-resistor angle sensor unit and draws magneto-resistor angle sensor unit composition, and has opposite magnetic-field-sensitive respectively
Direction.
For the twin shaft magneto-resistor angular transducer of TMR or GMR types, one is had single magnetic field quick by generally use
Feel the magneto-resistor sensing unit section of direction such as X-axis, overturn 90,180 and 270 degree respectively, magneto-resistor is pushed away obtain Y-axis with this
Sensing unit is cut into slices, and draws the section of magneto-resistor sensing unit, and magneto-resistor biography is cut into slices and drawn to the magnetic resistance sensor unit that pushes away of X-axis
Feel unit section, therefore, twin shaft magnetic resistance sensor will at least need 4 sections using the method for upset section, and its advantage exists
In preparation method is simple, it is only necessary to which a section, and a corresponding ferromagnetic reference structure, it is the disadvantage is that, need to operate
4 sections are positioned in the same plane, add due to sensor caused by operational error measurement accuracy loss can
Can property.
Using the design of the ferromagnetic reference of multi-layer film structure, by changing the ferromagnetic layer with inverse ferric magnetosphere coupling interaction
The number of plies of the plural layers formed with metal spacing layer, it is possible to achieve opposite ferromagnetic reference pushes away magneto-resistor sensing unit and drawn
The manufacture of magneto-resistor sensing unit；For the orientation of orthogonal ferromagnetic reference, can by two kinds of different inverse ferric magnetosphere AF1 with
And AF2, realized by magnetic field thermal annealing twice, it when depositing plural layers the disadvantage is that, due to needing to introduce at least four
Kind multi-layer film structure and magnetic-field annealing twice, add the complexity of micro fabrication.
Chinese Patent Application No. discloses one kind for CN201610821610.7 patent and uses laser program-controlled heating magnetic field
The method of annealing is scanned to magneto-resistor sensing unit to realize, quickly heats inverse ferric magnetosphere to more than blocking temperature, simultaneously
It can apply magnetic field along any direction in cooling procedure, can scan one by one, even scanning realizes that magneto-resistor sensing is single piecewise
The orientation in the magnetic-field-sensitive direction of member in either direction, it can realize that the twin shaft magneto-resistor in single section passes using this method
Four kinds of manufactures with orthogonally oriented magneto-resistor sensing unit and its array of unit are felt, so as to overcome the essence of upset section
It is determined that the problem of the micro fabrication complexity of position and a variety of magnetic multi-layer film structures of deposition, and single-chip twin shaft magnetoelectricity can be realized
Hinder the batch micro operations of angular transducer.On the other hand, China Patent Publication No. is that CN104776794A patent discloses one kind
The high-intensity magnetic field magneto-resistor angular transducer singly encapsulated, by increasing field decay on the surface of magneto-resistor angle sensor unit
The method of layer increases the magnetic-field measurement scope of magneto-resistor angle sensor unit, and the magneto-resistor angular transducer is still using section
The method of upset changes the magnetic-field-sensitive direction of magneto-resistor sensing unit, therefore, if moved back using laser auxiliary heating magnetic field
The method of fire realizes the write operation to magneto-resistor sensing unit magnetic-field-sensitive direction, can obtain the high magnetic of twin shaft of single-chip
Field intensity magneto-resistor angular transducer.
In addition, during practical laser program-controlled heating magnetic anneal, because magneto-resistor angle sensor unit is in process
In it is that may be present deviate circular, anisotropy and disperse, and the factor such as stress, this may all cause actual pinned layer magnetization
Set+X ,-X ,+Y and -Y direction are deviateed in direction, thus also require setting+X ,-X-axis magneto-resistor angle sensor unit and+
Y, angular range between-Y-axis magneto-resistor angle sensor unit pinned layer magnetization direction, to ensure magneto-resistor angle sensor unit
Efficient operation.
Utility model content
In order to solve the above problems, a kind of single-chip magneto-resistor angular transducer that the utility model is proposed, including position
In the substrate on X-Y plane, the push-pull type X-axis magneto-resistor angular transducer on the substrate and push-pull type Y-axis magneto-resistor
Angular transducer, the push-pull type X-axis magneto-resistor angular transducer includes X push arms and X draws bow, the push-pull type Y-axis magneto-resistor
Angular transducer includes Y push arms and Y and drawn bow, and the X push arms, X, which draw bow, Y push arms and Y draw bow includes at least one magneto-resistor angle
Spend sensing unit array, the X push arms, the magnetic-field-sensitive for the magneto-resistor angle sensor cell array that X draws bow, Y push arms, Y draw bow
Direction is respectively along +X direction, -X direction, +Y direction, -Y direction, the X-axis magneto-resistor angular transducer and the Y-axis magneto-resistor
Angular transducer has common geometric center, and each magneto-resistor angle sensor cell array includes multiple magnetoelectricities
Angle sensor unit is hindered, the magneto-resistor angle sensor unit is TMR or GMR spin valve cells, and the magneto-resistor angle passes
Sense unit is respectively provided with identical magnetic multi-layer film structure, and the magnetic multi-layer film structure includes Seed Layer, antiferromagnetic from top to bottom
Layer, pinning layer, Ru layers, reference layer, nonmagnetic intermediate layer, free layer and passivation layer, or include Seed Layer, antiferromagnetic from top to bottom
Layer, reference layer, nonmagnetic intermediate layer, free layer and passivation layer, when the magneto-resistor angle sensor unit is TMR, it is described it is non-magnetic in
Interbed is Al2O3Or MgO, when the magneto-resistor angle sensor unit is GMR Spin Valves, the nonmagnetic intermediate layer be Au or
For Cu.
The inverse ferric magnetosphere direction of magnetization is obtained by laser program-controlled heating magnetic anneal, has the magnetoelectricity of the identical direction of magnetization
Resistance bridge arm be located at adjacent position, between the adjacent magneto-resistor angle sensor cell array with different magnetic field sensitive direction with every
Temperature gap.
Further, the push-pull type X-axis magneto-resistor angular transducer and the push-pull type Y-axis magneto-resistor angular transducer
For half-bridge, full-bridge or quasi- bridge structure.
Further, arrangement mode between the magneto-resistor angle sensor cell array：
+X、-Y、+Y、-X；
Or+X ,+Y ,-Y ,-X；
Or-X ,-Y ,+Y ,+X；
Or+X ,-Y ,+Y ,-X.
Further, highfield angle sensor is formed in magneto-resistor angle sensor cell surface plating field decay layer
Device, the material of the field decay layer is High-magnetic permeability soft magnetic alloy, and the High-magnetic permeability soft magnetic alloy includes Fe, Co, Ni element
In one or more, be insulation material layer between the magneto-resistor angle sensor unit and the field decay layer, the magnetic
Field damping layer is circular configuration, and the magneto-resistor angle sensor unit is ellipsoidal structure, and the diameter of the field decay layer is big
In the long wheelbase of the magneto-resistor angle sensor unit.
Further, highfield angle sensor is formed in magneto-resistor angle sensor cell surface plating field decay layer
Device；The field decay layer is circular configuration, and the magneto-resistor angle sensor unit is circular configuration, and the magneto-resistor angle passes
The diameter for feeling unit is more than 10 microns, and the diameter of the field decay layer is more than the straight of the magneto-resistor angle sensor unit
Footpath..
Further, the X push arms, the X are drawn bow, the Y push arms and the Y are drawn bow comprising identical quantity and identical electricity
The magneto-resistor angle sensor unit of resistance, and the magneto-resistor angle sensor unit passes through series, parallel or mixing connection in series-parallel shape
Into both ends mouth structure.
Further, it is attached between the magneto-resistor angle sensor cell array by interconnecting wire, the interconnection
Wire includes straightway and zigzag section, and one end of the straightway is connected with the magneto-resistor sensing unit, the straightway
The other end is connected with the zigzag section, and the zigzag section is micro- more than 15 apart from the distance of the magneto-resistor angle sensor cell array
Rice.
Further, the interconnection wire for connecting power supply common port has identical mutual with the interconnection wire for being connected ground common port
Join resistance, the interconnection wire for connecting power supply common port has identical interconnection electricity with being connected the interconnection wire of signal output common port
Resistance, and the interconnection wire by the straightway and zigzag section to obtain identical interconnection resistance.
Further, the direction of magnetization between the magnetic-field-sensitive direction of the magneto-resistor angle sensor unit and the pinning layer
Angular range between 85 ° and 95 °.
Further, the passivation layer is Ultra-Violet Laser transparent material, and the Ultra-Violet Laser transparent material is BCB, Si3N4、
Al2O3、HfO2、AlF3、GdF3、LaF3、MgF2、Sc2O3、HfO2Or SiO2One of which material.
Further, the passivation layer is infrared laser transparent material, and the infrared laser transparent material is DLC
Carbon film, MgO, SiN, SiC, AlF3、MgF2、SiO2、Al2O3、ThF4、ZnS、ZnSe、ZrO2、HfO2、TiO2、Ta2O7, Si or Ge
One of which material.
Further, the magnetic multi-layer film structure also includes ARC, and the ARC is covered in described
The surface of passivation layer.
Further, the power supply of the X-axis magneto-resistor angular transducer and the Y-axis magneto-resistor angular transducer, it is defeated
Go out edge arrangement of the pin along sensor chip.
The utility model compared with prior art, has following technique effect：The utility model uses single chip architecture, will
Two angular transducers are integrated on the same chip；And the magneto-resistor angle sensor unit of two angular transducers has phase
Same magnetic multi-layer film structure, the utility model has compact-sized, high accuracy, small size, and can realize significantly magnetic field work
The advantages of making scope.
Brief description of the drawings
Fig. 1 is single-chip twin shaft magneto-resistor angular transducer schematic diagram of the present utility model；
Fig. 2 (a) is a kind of magneto-resistor angle sensor unit magnetic multi-layer film structure；
Fig. 2 (b) is in Fig. 2 (a) 100 schematic enlarged-scale view；
Fig. 2 (c) is another magneto-resistor angle sensor unit magnetic multi-layer film structure；
Fig. 2 (d) is in Fig. 2 (c) 200 schematic enlarged-scale view；
Fig. 3 (a) is the inverse ferric magnetosphere direction of magnetization of the present utility model magneto-resistor angle sensor unit top view in X direction；
Fig. 3 (b) is the inverse ferric magnetosphere direction of magnetization of the present utility model along Y-direction magneto-resistor angle sensor unit top view；
Fig. 4 (a) is that the high-field intensity magnetic resistance angle sensor unit of pinned layer magnetization direction of the present utility model in X direction is bowed
View；
Fig. 4 (b) is that high-field intensity magnetic resistance angle sensor unit of the pinned layer magnetization direction of the present utility model along Y-direction is bowed
View；
Fig. 5 (a) is the high-field intensity magnetic resistance angle sensor cell side of pinned layer magnetization direction of the present utility model in X direction
View；
Fig. 5 (b) is high-field intensity magnetic resistance angle sensor cell side of the pinned layer magnetization direction of the present utility model along Y-direction
View；
Fig. 6 (a) is push-pull type X-axis magneto-resistor angle sensor structure figure of the present utility model；
Fig. 6 (b) is push-pull type Y-axis magneto-resistor angle sensor structure figure of the present utility model；
Fig. 7 is push-pull type magneto-resistor angular transducer interconnection resistance distribution map of the present utility model；
Fig. 8 (a) is a kind of distributed architecture figure of magneto-resistor angle sensor cell array of the present utility model；
Fig. 8 (b) is magneto-resistor angle sensor cell array another kind distributed architecture figure of the present utility model；
Fig. 8 (c) is magneto-resistor angle sensor cell array another kind distributed architecture figure of the present utility model；
Fig. 8 (d) is magneto-resistor angle sensor cell array another kind distributed architecture figure of the present utility model.
Embodiment
It is new below in conjunction with this practicality to make the purpose, technical scheme and advantage of the utility model embodiment clearer
Accompanying drawing in type embodiment, the technical scheme in the embodiment of the utility model is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model part of the embodiment, rather than whole embodiments.
Below with reference to the accompanying drawings and in conjunction with the embodiments, the utility model is described in detail.
Embodiment one
Fig. 1 is single-chip twin shaft magneto-resistor angular transducer schematic diagram, including, the substrate 1 on X-Y plane, it is located at
Push-pull type X-axis magneto-resistor angular transducer 2 and push-pull type Y-axis magneto-resistor angular transducer 3 on substrate 1, wherein, X-axis magnetoelectricity
Resistance angular transducer 2 and Y-axis magneto-resistor angular transducer 3 have common geometric center, so, X-axis magnetic resistance sensor and Y
Measured field region has identical average value to axle magnetic resistance sensor on substrate 1, and push-pull type X-axis magneto-resistor angle passes
Sensor includes X push arms and X draws bow, and push-pull type Y-axis magneto-resistor angular transducer includes Y push arms and Y draws bow, and X push arms are included at least
Magneto-resistor angle sensor cell array 4 and 5, X of one magnetic-field-sensitive direction along +X direction are drawn bow quick including at least one magnetic field
Feeling magneto-resistor angle sensor cell array 6 and 7, Y push arm of the direction along -X direction includes at least one magnetic-field-sensitive direction along+Y
The magneto-resistor angle sensor cell array 8 in direction and 9, Y draw bow including the magnetoelectricity at least one magnetic-field-sensitive direction along -Y direction
Hinder angle sensor cell array 10 and 11.
It is seen in fig. 1, that the magneto-resistor sensing unit array such as 4,5 and 8,9 that two adjacent magnetic-field-sensitive directions are different
Between, between 8,9 and 10,11, separated respectively by insulated room away from 12-1,12-2,12-3 between 10,11 and 6,7.Specifically
Ground, have between the magneto-resistor angle sensor cell array of +X direction and the magneto-resistor angle sensor cell array of +Y direction heat-insulated
Spacing 12-1, that is to say, that between magneto-resistor angle sensor cell array 4 and magneto-resistor angle sensor cell array 8, and
There is insulated room away from 12-1 between magneto-resistor angle sensor cell array 5 and magneto-resistor angle sensor cell array 8.Correspondingly ,+
Between the magneto-resistor angle sensor cell array of Y-direction and the magneto-resistor angle sensor cell array of -Y direction have insulated room away from
12-2, that is to say, that between magneto-resistor angle sensor cell array 8 and magneto-resistor angle sensor cell array 10, and magnetic
There is insulated room away from 12-2 between resistance angle sensor cell array 9 and magneto-resistor angle sensor cell array 11.Also ,-Y sides
To magneto-resistor angle sensor cell array and -X direction magneto-resistor angle sensor cell array between have insulated room away from 12-
3, that is to say, that between magneto-resistor angle sensor cell array 10 and magneto-resistor angle sensor cell array 6, and magneto-resistor
There is insulated room away from 12-3 between angle sensor cell array 11 and magneto-resistor angle sensor cell array 7.Wherein, insulated room away from
The influence that 12 purpose is to cause laser to heat the magneto-resistor sensing unit array different to adjacent magnetic field sensitive direction is carried out
Isolation.
Further, the magneto-resistor angle sensor cell array of+X ,-X ,+Y and-Y magnetic field orientatings is by identical magneto-resistor
Angle sensor unit 15 is formed, and X push arms, X are drawn bow, Y push arms and Y are drawn bow and include+X ,-X ,+Y and the-Y magnetic susceptibilities of identical quantity
Direction magneto-resistor angle sensor unit, and connect into two-port each via series, parallel or the series-parallel form of mixing
Structure, and there is identical resistance.
It is attached between magneto-resistor angle sensor cell array by interconnecting the form of wire 13, and for no and magnetic
The interconnection wire 13 that magneto-resistor angle sensor unit in resistance angle sensor cell array is connected, then it is located at and is passed apart from magneto-resistor
Distance 14 is more than in the range of 15um between feeling cell array；Specifically, the interconnection wire includes straightway and zigzag section, institute
The one end for stating straightway is connected with the magneto-resistor sensing unit, and the other end of the straightway is connected with the zigzag section, institute
The distance that zigzag section is stated apart from the magneto-resistor angle sensor cell array is more than 15 microns.In addition, 16 be the song of interconnection wire
Trisection, its object is to interconnect the method for wire total length by increasing to increase interconnection conductor resistance.
Fig. 2 is the magnetic multi-layer film structure figure of magneto-resistor angle sensor unit, and magneto-resistor angle sensor unit 20 is magnetic tunnel
Road knot MTJ is GMR Spin Valves, wherein, the magneto-resistor angle sensor unit of two angular transducers has identical magnetic more
Layer film structure, Fig. 2 (a) are a kind of magneto-resistor angle sensor unit magnetic multi-layer film structure, and Fig. 2 (b) is 100 in Fig. 2 (a)
Schematic enlarged-scale view, the magnetic multi-layer film structure include Seed Layer 23, inverse ferric magnetosphere 24, pinning layer 25, Ru26, ginseng from top to bottom
Examine layer 27, nonmagnetic intermediate layer 28, free layer 29, passivation layer 30；Or Fig. 2 (c) is another magneto-resistor angle sensor unit magnetic
Multi-layer film structure, Fig. 2 (d) are in Fig. 2 (c) 200 schematic enlarged-scale view, and the magnetic multi-layer film structure includes kind from top to bottom
Sublayer 23, inverse ferric magnetosphere 24, reference layer 27, nonmagnetic intermediate layer 28, free layer 29, passivation layer 30；Wherein, for magnetic tunnel-junction
MTJ, nonmagnetic intermediate layer Al2O3Or MgO film, for GMR Spin Valves, nonmagnetic intermediate layer is metal conducting layer such as Cu and Au
Film, in both cases, the inverse ferric magnetosphere direction of magnetization 24 are edge+X and -X direction 31, or are+Y and -Y direction 32.
Fig. 3 is the shape graph of magneto-resistor angle sensor unit 20, and Fig. 3 (a) is that magneto-resistor angle passes inverse ferric magnetosphere in X direction
Feel unit top view, Fig. 3 (b) be inverse ferric magnetosphere along Y-direction magneto-resistor angle sensor unit top view, from Fig. 3 (a) and Fig. 3 (b)
Find out, both are circular configuration, and the inverse ferric magnetosphere direction of magnetization is respectively along+X, -X direction and+Y, -Y direction.In order to ensure twin shaft
Magneto-resistor angular transducer can normally work, it is contemplated that due to magneto-resistor angle sensor unit stray circle that may be present
Actual pinned layer magnetization direction deviation+X ,-X ,+Y and -Y direction caused by shape, thermal stress and anisotropic dispersiveness,
Also require sensitive direction between X-axis and the pinning layer of Y-axis magneto-resistor sensing unit angular orientation scope between 85 ° and 95 °.
Fig. 4 is high-field intensity magnetic resistance angle sensor unit top view, and specifically, Fig. 4 (a) is pinned layer magnetization direction along X
The high-field intensity magnetic resistance angle sensor unit top view in direction, Fig. 4 (b) are pinned layer magnetization direction along Y and the high field intensity in direction
Magneto-resistor angle sensor unit top view；Fig. 5 is corresponding with Fig. 4, and Fig. 5 is high-field intensity magnetic resistance angle sensor unit side view,
Specifically, Fig. 5 (a) is the high-field intensity magnetic resistance angle sensor unit side view of pinned layer magnetization direction in X direction, and Fig. 5 (b) is
High-field intensity magnetic resistance angle sensor unit side view of the pinned layer magnetization direction along Y-direction.Find out from Fig. 4 and Fig. 5, the High-Field
Strong magneto-resistor angle sensor unit includes magneto-resistor angle sensor unit 20 and positioned at magneto-resistor angle sensor unit upper surface
Or the magnetic damping layer 33 of lower surface, it is wherein insulating barrier 34 between magnetic damping layer 33 and magneto-resistor angle sensor unit 20.Its
In, magnetic damping layer 33 is the one or several kinds in High-magnetic permeability soft magnetic alloy material, including Fe, Co, Ni element, and is only existed
, could be by magneto-resistor angle sensor after the laser program-controlled heating magnetic anneal of all magneto-resistor angle sensor units 20 is completed
Cell surface plating magnetic attenuating material layer 33, so as to obtain high-field intensity magnetic resistance angular transducer.
Specifically, highfield angle is formed in the electroplating surface field decay layer 33 of magneto-resistor angle sensor unit 20 to pass
Sensor；The field decay layer 33 is circular configuration, and the magneto-resistor angle sensor unit 20 is ellipse or circular configuration；If
Magneto-resistor angle sensor unit 20 is ellipse, and the diameter of the field decay layer 33 is more than the magneto-resistor angle sensor unit
20 long wheelbase；If the magneto-resistor angle sensor unit 20 is circular configuration, the diameter of the field decay layer 33 is more than institute
The diameter of magneto-resistor angle sensor unit 20 is stated, also, now the diameter of the magneto-resistor angle sensor unit 20 is micro- more than 10
Rice.
The passivation layer is Ultra-Violet Laser transparent material, including BCB, Si3N4、Al2O3、HfO2、AlF3、GdF3、LaF3、
MgF2、Sc2O3、HfO2Or SiO2。
The passivation layer is infrared laser transparent material, including diamond-like carbon film, MgO, SiN, SiC, AlF3、MgF2、
SiO2、Al2O3、ThF4、ZnS、ZnSe、ZrO2、HfO2、TiO2、Ta2O7, Si or Ge.
The passivation layer surface adds ARC.
The power supply of the X-axis magneto-resistor angular transducer and Y-axis magneto-resistor angular transducer, output pin is along square
The side arrangement of shape chip.
Fig. 6 is push-pull type twin shaft magneto-resistor angle sensor structure figure, can be half-bridge, full-bridge or quasi- bridge structure, Fig. 6
(a) it is push-pull type X-axis magneto-resistor angular transducer full bridge structure figure, Fig. 6 (b) is that push-pull type Y-axis magneto-resistor angular transducer is complete
Bridge structure chart.
Fig. 7 is push-pull type magneto-resistor angular transducer interconnection resistance distribution map, for push-pull type X-axis magneto-resistor angle sensor
Device or push-pull type Y-axis magneto-resistor angular transducer, either in push-pull type full-bridge or half-bridge circuit, connect power supply common port
Vs and the push arm and the interconnection wire drawn bow, and the interconnection wire for connecting ground public terminal GND and the push arm and drawing bow are equal
With identical interconnection resistance Rc1, the interconnection wire for connecting signal output common port V+, V- and the push arm and drawing bow is respectively provided with
Identical interconnection resistance Rc2, and all push arms and draw bow simultaneously with identical resistance, in this manner it is ensured that push-pull type X-axis magnetic
It is 0 voltage signal that resistance angular transducer or push-pull type Y-axis magneto-resistor angular transducer can export at 0 magnetic field, is
Reach this purpose, interconnection wire is realized by straightway or zigzag section, and zigzag section is to increase electricity as shown in Fig. 1 16
Resistance, so as to obtain identical interconnection resistance.
Fig. 8 is point of+X ,-X ,+Y ,-Y the magneto-resistor angle sensor cell array of twin shaft magneto-resistor angular transducer shown in Fig. 1
Butut, in order to ensure+X ,-X ,+the Y ,-Y magnetic of X push-pull type magneto-resistor angular transducers and Y push-pull type magneto-resistor angular transducers
The distribution of resistance sensing unit array has identical geometric center, and Fig. 8 (a) distributed architectures are+Y ,+X ,-X ,-Y magneto-resistor angle
Sensing unit array distributed architecture figure is spent, Fig. 8 (b) distributed architectures are-Y ,+X ,-X ,+Y magneto-resistor angle sensor cell array
Distributed architecture figure, Fig. 8 (c) distributed architectures are+Y ,-X ,+X ,-Y magneto-resistor angle sensor cell array distributed architecture figure, Fig. 8
(d) distributed architecture is-Y ,-X ,+X ,+Y magneto-resistor angle sensor cell array distributed architecture figure, wherein with identical magnetization side
To magneto-resistor bridge arm arranged adjacent, so as to laser program control operation.
In summary, magneto-resistor angular transducer of the present utility model include push-pull type X-axis magneto-resistor angular transducer and
Push-pull type Y-axis magneto-resistor angular transducer, two angular transducers are integrated on the same chip so that overall dimensions are small, knot
Structure is compact；The X-axis magneto-resistor angular transducer and Y-axis magneto-resistor angular transducer have common geometric center, also, two
The magneto-resistor angle sensor unit of individual angular transducer has identical magnetic multi-layer film structure, and two such angular transducer exists
Measured field region has identical average value on substrate, so that sensor integrally has relatively low power consumption；Can also
It is enough to deposit field decay layer in magneto-resistor angle sensor cell surface to improve operating fields scope；Further, adjacent two
Have insulated room away from, the insulated room away from phase can be isolated between the different magneto-resistor sensing unit array in individual magnetic-field-sensitive direction
Influence between the different magneto-resistor sensing unit array in adjacent magnetic-field-sensitive direction；In a word, the utility model have it is compact-sized,
High accuracy, small size, and the advantages of significantly magnetic field working range can be realized.
Preferred embodiment of the present utility model is the foregoing is only, is not limited to the utility model, for this
For the technical staff in field, the utility model can have various modifications and variations.It is all in the spirit and principles of the utility model
Within, any modification, equivalent substitution and improvements made etc., it should be included within the scope of protection of the utility model.
Claims (13)
1. a kind of single-chip twin shaft magneto-resistor angular transducer,
Push-pull type X-axis magneto-resistor angular transducer and push-pull type including the substrate on X-Y plane, on the substrate
Y-axis magneto-resistor angular transducer,
The push-pull type X-axis magneto-resistor angular transducer includes X push arms and X draws bow,
The push-pull type Y-axis magneto-resistor angular transducer includes Y push arms and Y draws bow,
The X push arms, X, which draw bow, Y push arms and Y draw bow includes at least one magneto-resistor angle sensor cell array, and the X is pushed away
The magnetic-field-sensitive direction for the magneto-resistor angle sensor cell array that arm, X draw bow, Y push arms, Y draw bow is respectively along +X direction ,-X sides
To, +Y direction, -Y direction, it is characterised in that
The X-axis magneto-resistor angular transducer and the Y-axis magneto-resistor angular transducer have common geometric center,
Each magneto-resistor angle sensor cell array includes multiple magneto-resistor angle sensor units, the magneto-resistor
Angle sensor unit is TMR or GMR spin valve cells, and the magneto-resistor angle sensor unit is respectively provided with identical magnetic multi-layer thin
Membrane structure, the magnetic multi-layer film structure include Seed Layer, inverse ferric magnetosphere, pinning layer, Ru layers, reference layer, non-magnetic from bottom to top
Intermediate layer, free layer and passivation layer, or include Seed Layer, inverse ferric magnetosphere, reference layer, nonmagnetic intermediate layer, freedom from bottom to top
Layer and passivation layer,
When the magneto-resistor angle sensor unit is TMR, the nonmagnetic intermediate layer is Al2O3Or MgO, the magneto-resistor angle
When sensing unit is GMR Spin Valves, the nonmagnetic intermediate layer is Au or is Cu,
The inverse ferric magnetosphere direction of magnetization is obtained by laser program-controlled heating magnetic anneal, has the magneto-resistor bridge of the identical direction of magnetization
Arm is located at adjacent position, with insulated room between the adjacent magneto-resistor angle sensor cell array with different magnetic field sensitive direction
Gap.
A kind of 2. single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that the push-pull type
X-axis magneto-resistor angular transducer and the push-pull type Y-axis magneto-resistor angular transducer are half-bridge, full-bridge or quasi- bridge structure.
A kind of 3. single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that the magneto-resistor
Arrangement mode between angle sensor cell array：
+X、-Y、+Y、-X；
Or+X ,+Y ,-Y ,-X；
Or-X ,-Y ,+Y ,+X；
Or+X ,-Y ,+Y ,-X.
4. a kind of single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that in the magnetoelectricity
Hinder angle sensor cell surface plating field decay layer and form highfield angular transducer, the material of the field decay layer is height
Magnetic conductivity magnetically soft alloy, the High-magnetic permeability soft magnetic alloy include the one or more in Fe, Co, Ni element, the magneto-resistor angle
It is insulation material layer to spend between sensing unit and the field decay layer；
The field decay layer is circular configuration, and the magneto-resistor angle sensor unit is ellipsoidal structure, the field decay
The diameter of layer is more than the long wheelbase of the magneto-resistor angle sensor unit.
5. a kind of single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that in the magnetoelectricity
Hinder angle sensor cell surface plating field decay layer and form highfield angular transducer；
The field decay layer is circular configuration, and the magneto-resistor angle sensor unit is circular configuration, the magneto-resistor angle
The diameter of sensing unit is more than 10 microns, and the diameter of the field decay layer is more than the straight of the magneto-resistor angle sensor unit
Footpath.
A kind of 6. single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that the X push arms,
The X draws bow, the Y push arms and the Y the draw bow magneto-resistor angle sensor unit comprising identical quantity and same resistance, and institute
State magneto-resistor angle sensor unit and both ends mouth structure is formed by series, parallel or mixing connection in series-parallel.
A kind of 7. single-chip twin shaft magneto-resistor angular transducer according to claim 2, it is characterised in that the magneto-resistor
It is attached between angle sensor cell array by interconnecting wire, the interconnection wire includes straightway and zigzag section, described
One end of straightway is connected with the magneto-resistor sensing unit, and the other end of the straightway is connected with the zigzag section, described
Zigzag section is more than 15 microns apart from the distance of the magneto-resistor angle sensor cell array.
8. a kind of single-chip twin shaft magneto-resistor angular transducer according to claim 7, it is characterised in that connection power supply is public
The interconnection wire held altogether has identical interconnection resistance with the interconnection wire for being connected ground common port, connects the interconnection of power supply common port
Wire has an identical interconnection resistance with being connected the interconnection wire of signal output common port, and the interconnection wire pass through it is described straight
Line segment and zigzag section are to obtain identical interconnection resistance.
A kind of 9. single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that the magneto-resistor
The angular range of the direction of magnetization is between 85 ° and 95 ° between the magnetic-field-sensitive direction of angle sensor unit and the pinning layer.
A kind of 10. single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that the passivation
Layer is Ultra-Violet Laser transparent material, and the Ultra-Violet Laser transparent material is BCB, Si3N4、Al2O3、HfO2、AlF3、GdF3、LaF3、
MgF2、Sc2O3、HfO2Or SiO2One of which material.
A kind of 11. single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that the passivation
Layer is infrared laser transparent material, and the infrared laser transparent material is diamond-like carbon film, MgO, SiN, SiC, AlF3、MgF2、
SiO2、Al2O3、ThF4、ZnS、ZnSe、ZrO2、HfO2、TiO2、Ta2O7, Si or Ge one of which material.
12. a kind of single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that the magnetic is more
Layer film structure also includes ARC, and the ARC is covered in the surface of the passivation layer.
A kind of 13. single-chip twin shaft magneto-resistor angular transducer according to claim 1, it is characterised in that the X-axis magnetic
The power supply of resistance angular transducer and the Y-axis magneto-resistor angular transducer, edge of the output pin along sensor chip
Arrangement.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106871778A (en) * | 2017-02-23 | 2017-06-20 | 江苏多维科技有限公司 | A kind of single-chip twin shaft magneto-resistor angular transducer |
| WO2018202085A1 (en) * | 2017-05-04 | 2018-11-08 | 江苏多维科技有限公司 | Monolithic-chip and high-sensitivity type magneto-resistor linear transducer |
-
2017
- 2017-02-23 CN CN201720165912.3U patent/CN206627062U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106871778A (en) * | 2017-02-23 | 2017-06-20 | 江苏多维科技有限公司 | A kind of single-chip twin shaft magneto-resistor angular transducer |
| WO2018153335A1 (en) * | 2017-02-23 | 2018-08-30 | 江苏多维科技有限公司 | Single-chip double-axis magneto-resistance angle sensor |
| CN106871778B (en) * | 2017-02-23 | 2019-11-22 | 江苏多维科技有限公司 | A kind of single-chip twin shaft magneto-resistor angular transducer |
| US11512939B2 (en) | 2017-02-23 | 2022-11-29 | MultiDimension Technology Co., Ltd. | Single-chip double-axis magnetoresistive angle sensor |
| WO2018202085A1 (en) * | 2017-05-04 | 2018-11-08 | 江苏多维科技有限公司 | Monolithic-chip and high-sensitivity type magneto-resistor linear transducer |
| US11137452B2 (en) | 2017-05-04 | 2021-10-05 | MultiDimension Technology Co., Ltd. | Single chip high-sensitivity magnetoresistive linear sensor |
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