CN206595271U - A kind of N-type double-side cell interconnection technology - Google Patents
A kind of N-type double-side cell interconnection technology Download PDFInfo
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- CN206595271U CN206595271U CN201720094094.2U CN201720094094U CN206595271U CN 206595271 U CN206595271 U CN 206595271U CN 201720094094 U CN201720094094 U CN 201720094094U CN 206595271 U CN206595271 U CN 206595271U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model is a kind of N-type double-side cell interconnection technology, and N-type double-side cell is evenly divided into 25 independent battery units, and the front of each battery unit is provided with positive thin grid line, and the back side is provided with the thin grid line in the back side.Each battery unit can also set some main gate lines perpendicular to thin grid line, when the positive back side of N-type double-side cell is set without main grid, the thin grid line in front of upper a piece of battery unit is connected with each other with conductive material and a piece of thin grid line in the battery unit back side is connected with, under a piece of thin grid line in the battery unit back side be connected also by the conductive material.When the positive back side of N-type double-side cell set it is several perpendicular to the main gate line of thin grid line when, by the front main grid line of upper a piece of battery unit, a piece of battery unit back side main gate line is connected with.The utility model can reduce electric current and series resistance using being separated cell piece and using many main grid modes to connect, so as to reduce resistance power loss, improve the power of component.
Description
Technical field
The utility model belongs to technical field of solar batteries, is related to a kind of N-type double-side cell interconnection technology.
Background technology
N-type silicon materials have the following advantages that：（1）Impurity in n type material is less than P to the capture ability in sub- hole less
Impurity in section bar material is to the capture ability of sub- electronics less, and the minority carrier life time of the N-type silicon chip of same resistivity is than P-type silicon piece
Height, reaches Millisecond；（2）N-type silicon chip is higher than P-type silicon piece, Fe, Cr, Co, W, Cu, Ni to the dirty miscellaneous tolerance of metal
Influence Deng metal to P-type silicon piece is big than N-type silicon chip；（3）N-type silion cell component is shown than conventional P-type silicon under dim light
The more excellent power generation characteristics of component.But current battery is present that electric current is big, series resistance it is big thus resistance loss it is big, component work(
The low shortcoming of rate.
Utility model content
In order to solve the above problems, the utility model provides a kind of N-type double-side cell interconnection technique, N-type double-side cell
Due to the lifting of electric current, the increase of loss is brought, using being separated cell piece and using many main grid modes to connect, can be reduced
Electric current and series resistance, so as to reduce resistance loss, improve the power of component.
In order to achieve the above object, the utility model is achieved through the following technical solutions：
The utility model is a kind of N-type double-side cell interconnection technology, and N-type double-side cell is evenly divided into 2-5 independently
Battery unit, the front of each battery unit is provided with positive thin grid line, and the back side is provided with the thin grid line in the back side.Each battery list
Member can also set some main gate lines perpendicular to thin grid line, when the positive back side of N-type double-side cell is set without main grid, use conduction material
Expect the thin grid line in the front of upper a piece of battery unit being connected with each other and a piece of thin grid line in the battery unit back side is connected with, under
The a piece of thin grid line in the battery unit back side is connected also by the conductive material.When in the positive back side of N-type double-side cell setting number
It is individual perpendicular to the main gate line of thin grid line when, by the front main grid line of upper a piece of battery unit with a piece of battery unit back side main grid
Line is connected.
Further improvement of the utility model is：Positive thin grid line and the thin grid line in the back side are straight line or line segment.
Further improvement of the utility model is：Positive thin grid line and the thin grid regular array in the back side are in crystal silicon solar
On the antireflective passive film of battery, and penetrate antireflective passive film and crystal silicon chip formation Ohmic contact.
Further improvement of the utility model is：Antireflective passive film is SiNx, SiO2, TiO2, Al2O3, SiOxNy
One kind or stack membrane in film.
Further improvement of the utility model is：The width of positive thin grid line and the thin grid line in the back side is micro- for 20 micron -100
Rice, cross-sectional area is 400-5000 square microns, and occupied area ratio is 1-10%.
Further improvement of the utility model is：Conductive material is the conducting metal material for being coated with low-temperature metal or alloy
Material or organic and inorganic and metal material mixture.
Further improvement of the utility model is：Conductive material cross-sectional area is 0.0075-0.45 square millimeters, quantity
For 4-150 roots.
Further improvement of the utility model is：Conductive material passes through welding with the thin grid line in front or the thin grid line in the back side
Or bonding way connection.
Further improvement of the utility model is：Conductive material is uniformly distributed in metallic region, and with each just
The thin grid line of the thin grid line in face or the back side homogeneously connects, and when the thin grid line in front and the thin grid line in the back side are line segment, conductive material is located at just
The center of the thin grid line of the thin grid line in face and the back side.
Further improvement of the utility model is：Using silk-screen printing, laser transfer, ink-jet or 3D printing by metal pulp
Expect that the surface for the crystal silicon chip for being coated in N-type double-side cell by array pattern prepares metal electrode；Or it is rotten using laser or chemistry
Erosion carries out perforate, then prepares metal electrode in tapping using vapour deposition, photoinduction plating or electro-plating method.
The beneficial effects of the utility model are：N-type double-side cell brings loss increase due to the lifting of electric current, using general
Cell piece separates and uses many main grid modes to connect, and can reduce electric current and series resistance, so as to reduce resistance power loss, carry
The power of high component.
The utility model is simple in construction, novelty reasonable in design, easy to operate.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the structural representation of the utility model embodiment one.
Fig. 3 is the structural representation of the utility model embodiment two.
Fig. 4 is the structural representation of the utility model embodiment three.
The thin grid line in 2- fronts, the thin grid line in the 3- back sides, 4- front main grid lines, 5- back sides main gate line,
Conductive material, A-1 front side conductive materials, A-2 back sides conductive material.
Embodiment
In order to deepen to understand of the present utility model, the utility model is done further below in conjunction with drawings and examples
It is described in detail, the embodiment is only used for explaining the utility model, protection domain of the present utility model is not constituted and limited.
As Figure 1-4, the utility model is a kind of N-type double-side cell interconnection technology, by N-type double-side cell even partition
Into 2-5 independent battery units, the front of each battery unit is provided with positive thin grid line 2, and the back side is provided with the thin grid in the back side
Line 3, can also set some main gate lines 4,5 perpendicular to thin grid line.Set when at the positive back side of N-type double-side cell without main grid
When, the thin grid line 2 in the front of upper a piece of battery unit is connected with each other with conductive material and a piece of battery unit back side is thin with
Grid line 3 is connected, under a piece of thin grid line 3 in the battery unit back side be connected also by the conductive material.When in N-type double-side cell
Front set it is several perpendicular to the main gate line of thin grid line when, by the front main grid line of upper a piece of battery unit with a piece of battery
Unit back side main gate line is connected, wherein the thin grid line 2 in the front and the thin grid line 3 in the back side are straight line or line segment, the front is thin
The width of the thin grid line 3 of grid line 2 and the back side is 20 microns -100 microns, and cross-sectional area is 400-5000 square microns, occupied area
Ratio is 1-10%, and the thin grid line 2 in front and the thin regular array of grid line 3 in the back side are blunt in the antireflective of crystal silicon solar energy battery
Change on film, and penetrate antireflective passive film and crystal silicon chip formation Ohmic contact, the antireflective passive film is SiNx, SiO2,
One kind or stack membrane in TiO2, Al2O3, SiOxNy film, the conductive material cross-sectional area are 0.0075-0.45 squares
Millimeter, quantity is 4-150 roots, the conductive material A be coated with low-temperature metal or alloy conductive metallic material or it is organic,
The inorganic mixture with metal material, the conductive material A and the thin grid line 2 in front or the thin grid line 3 in the back side by welding or
Bonding way is connected, and the conductive material A is uniformly distributed in metallized area, and with the thin grid line 2 in each front or the back side
Thin grid line 3 homogeneously connects, when the thin grid line 2 in front and the thin grid line 3 in the back side are line segment, the conductive material positioned at it is described just
The center of the thin grid line 3 of the thin grid line 2 in face and the back side, battle array is pressed using silk-screen printing, laser transfer, ink-jet or 3D printing by metal paste
The surface that row pattern is coated in the crystal silicon chip of N-type double-side cell prepares metal electrode；Or carried out using laser or chemical attack
Perforate, then prepares metal electrode using vapour deposition, photoinduction plating or electro-plating method in tapping.
Embodiment one
As shown in Fig. 1, the thin grid line in front of N-type double-side cell of the present utility model is 101, and 55 microns of line width is transversal
Area be 550 square microns, the thin grid line in the back side 90,50 microns of line width, cross-sectional area be 500 microns, using screen printing dataller
Skill is formed, and cell piece is divided into three parts by battery along the direction parallel to thin grid line, a diameter of using tinned wird
300 microns, quantity is 11, and the method for the thin grid line welding in the back side of the upper thin grid line of half battery front side and lower half battery is connected
Pick up and.
Embodiment two
As shown in Fig. 2 the thin grid line 96 in the front of N-type double-side cell of the present utility model, 55 microns of line width, cross-sectional area
For 550 square microns, the thin grid line in the back side 90,50 microns of line width, cross-sectional area is 500 microns, and main grid number is 4, width
For 1mm, formed using silk-screen printing technique.Battery is divided into two parts along the direction perpendicular to main grid by cell piece, adopted
With tin-coated copper strip, width is 1.5mm microns, and thickness is 0.27mm, by upper half battery front side main gate line and lower half battery
Back side main gate line is connected with the method for welding.
Embodiment three
As shown in figure 3, the thin grid line in the front of N-type double-side cell of the present utility model is line segment, every line segment length is
25mm, spacing is 1mm, totally 606,45 microns of line width, and cross-sectional area is 900 square microns, and the thin grid line in the back side is line segment, every
Line segment length is 25mm, and spacing is 1mm, totally 540,30 microns of line width, and cross-sectional area is 900 square microns, using galvanizer
Skill is formed, and cell piece is divided into two parts by battery along the direction parallel to thin grid line, using conductive tape, width is
1mm, cross-sectional area is 0.3 square millimeter, and quantity is 6, by the back side of the upper thin grid line of half battery front side and lower half battery
Thin grid line is bonded together.
Claims (10)
1. a kind of N-type double-side cell interconnection technology, is evenly divided into 2-5 independent battery units, each by N-type double-side cell
The front of battery unit is provided with positive thin grid line（2）, the back side is provided with the thin grid line in the back side（3）If each battery unit is set
The dry main gate line perpendicular to thin grid line, it is characterised in that：When the positive back side of N-type double-side cell is set without main grid, conductive material is used
By the thin grid line in the front of upper a piece of battery unit（2）It is connected with each other and a piece of thin grid line in the battery unit back side with（3）It is connected
Connect, under a piece of thin grid line in the battery unit back side（3）It is connected also by the conductive material, when the positive back of the body in N-type double-side cell
Face set it is several perpendicular to the main gate line of thin grid line when, by the front main grid line of upper a piece of battery unit with a piece of battery unit
Back side main gate line is connected.
2. a kind of N-type double-side cell interconnection technology according to claim 1, it is characterised in that：The thin grid line in front（2）With
The thin grid line in the back side（3）It is straight line or line segment.
3. a kind of N-type double-side cell interconnection technology according to claim 1, it is characterised in that：The thin grid line in front（2）With
The thin grid line in the back side（3）Regular array penetrates antireflective passive film on the antireflective coating passivating film of crystal silicon solar energy battery
With crystal silicon chip formation Ohmic contact.
4. a kind of N-type double-side cell interconnection technology according to claim 3, it is characterised in that：The antireflective passive film is
One kind or stack membrane in SiNx, SiO2, TiO2, Al2O3, SiOxNy film.
5. a kind of N-type double-side cell interconnection technology according to claim 1, it is characterised in that：The thin grid line in front（2）With
The thin grid line in the back side（3）Width be 20 microns -100 microns, cross-sectional area is 400-5000 square microns, and occupied area ratio is
1-10%。
6. a kind of N-type double-side cell interconnection technology according to claim 1, it is characterised in that：The conductive material is coating
There are the conductive metallic material or organic and inorganic and metal material mixture of low-temperature metal or alloy.
7. a kind of N-type double-side cell interconnection technology according to claim 1 or 6, it is characterised in that：The conductive material is transversal
Area is 0.0075-0.45 square millimeters, and quantity is 4-150 roots.
8. a kind of N-type double-side cell interconnection technology according to claim 1, it is characterised in that：The conductive material and front
Thin grid line（2）Or the thin grid line in the back side（3）Connected by welding or bonding way.
9. a kind of N-type double-side cell interconnection technology according to claim 8, it is characterised in that：The conductive material uniformly divides
Be distributed in metallized area, and with each thin grid line in front（2）Or the thin grid line in the back side（3）Homogeneously connect, the front is thin
Grid line（2）With the thin grid line in the back side（3）During for line segment, the conductive material is located at the thin grid line in the front（2）With the thin grid line in the back side
（3）Center.
10. a kind of N-type double-side cell interconnection technology according to claim 1, it is characterised in that：Using silk-screen printing, laser
The surface that metal paste is coated in the crystal silicon chip of N-type double-side cell by transfer, ink-jet or 3D printing by array pattern prepares gold
Belong to electrode；Or perforate is carried out using laser or chemical attack, then using vapour deposition, photoinduction plating or electro-plating method in perforate
Place prepares metal electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720094094.2U CN206595271U (en) | 2017-01-24 | 2017-01-24 | A kind of N-type double-side cell interconnection technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720094094.2U CN206595271U (en) | 2017-01-24 | 2017-01-24 | A kind of N-type double-side cell interconnection technology |
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| CN206595271U true CN206595271U (en) | 2017-10-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784103A (en) * | 2017-01-24 | 2017-05-31 | 泰州乐叶光伏科技有限公司 | A kind of N-type double-side cell interconnection technology |
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- 2017-01-24 CN CN201720094094.2U patent/CN206595271U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784103A (en) * | 2017-01-24 | 2017-05-31 | 泰州乐叶光伏科技有限公司 | A kind of N-type double-side cell interconnection technology |
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