CN206567983U - Grinding pad and chemical mechanical polishing device - Google Patents

Grinding pad and chemical mechanical polishing device Download PDF

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Publication number
CN206567983U
CN206567983U CN201720255456.1U CN201720255456U CN206567983U CN 206567983 U CN206567983 U CN 206567983U CN 201720255456 U CN201720255456 U CN 201720255456U CN 206567983 U CN206567983 U CN 206567983U
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Prior art keywords
grinding pad
grinding
multiple grooves
groove
ground
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CN201720255456.1U
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Chinese (zh)
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谭玉荣
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Tianjin Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Tianjin Corp
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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The utility model provides a kind of grinding pad and chemical mechanical polishing device, and the grinding pad includes:Pad body is ground, the upper surface of the grinding pad body is used to the front face of a wafer to be ground realize cmp;Multiple grooves, the groove is arranged at the upper surface of the grinding pad body, and is interconnected between multiple grooves;When lapping liquid is dripped at a certain position of the grinding pad, the groove of mutual conduction can cause lapping liquid rapid dispersion on grinding pad so that lapping liquid is provided with grinding pad, so as to improve the efficiency of cmp.

Description

Grinding pad and chemical mechanical polishing device
Technical field
The utility model is related to technical field of semiconductors, and in particular to a kind of grinding pad and chemical mechanical polishing device.
Background technology
With continuing to develop for semiconductor technology, and large scale integrated circuit interconnection layer is continuously increased, conductive layer and The planarization of insulating medium layer becomes particularly critical.Twentieth century eighties, the cmp initiated by IBM Corporation (CMP) technology is considered as the most effectual way of current global planarizartion.
Cmp technology has mechanical polishing concurrently and grinds two kinds of effects with chemical formula, can make whole wafer surface Planarization is reached, the techniques such as thin film deposition are carried out in order to follow-up., will be to be ground by grinding head during CMP is carried out Wafer be pressed on grinding pad and drive wafer to rotate, and grinding pad then rotates in a reverse direction.When being ground, pass through Required lapping liquid is added between wafer and grinding pad by grinding fluid conveying device, then, with grinding pad and to be ground Running at high speed between wafer, the reaction product of crystal column surface to be ground is constantly peeled off, and reaction product is with lapping liquid quilt Take away.The new surface of wafer to be ground can chemically react again, and reaction product is stripped out again, so moves in circles, Under the collective effect of mechanical lapping and chemical attack, make flattening wafer surface.
Many grooves are provided with grinding pad, is mainly used in the Quick uniform distribution of lapping liquid, the uniform of grinding strength and delays Punching, exclusion of residual lapping liquid etc..In the prior art, the groove on grinding pad is multiple concentric annulus, and different is described same Do not turned between heart annulus, be unfavorable for the distribution of lapping liquid longitudinal direction, have impact on the speed of lapping liquid genesis analysis.
Therefore it provides a kind of grinding pad, the speed for improving lapping liquid genesis analysis is that those skilled in the art are urgently to be resolved hurrily Technical problem.
Utility model content
The purpose of this utility model is to provide a kind of grinding pad and chemical mechanical polishing device, makes lapping liquid in grinding pad There is provided the efficiency of cmp for upper quick distribution.
To achieve the above object, the utility model provides a kind of grinding pad, for cmp, including:
Pad body is ground, the upper surface of the grinding pad body is used for the front face with a wafer to be ground with realization Learn mechanical lapping;
Multiple grooves, the groove is arranged at the upper surface of the grinding pad body, and between multiple grooves mutually Connection.
Optionally, multiple grooves are uniformly arranged on the upper surface of the grinding pad body.
Optionally, the cross section of the groove is circular, triangle or quadrangle.
Optionally, the area and depth of multiple grooves are equal.
Optionally, it is interconnected between multiple grooves by irrigation canals and ditches.
Optionally, the depth of the irrigation canals and ditches is less than or equal to the depth of the groove.
Accordingly, the utility model also provides a kind of chemical mechanical polishing device, including:Grinding table, is fixed on described grind The grinding pad on platform, and grinding head are ground, the end face of the grinding head is used to use cooperatively grinding crystal wafer, institute with the grinding pad Stating grinding pad includes:
Pad body is ground, the upper surface of the grinding pad body is used for the front face with a wafer to be ground with realization Learn mechanical lapping;
Multiple grooves, the groove is arranged at the upper surface of the grinding pad body, and between multiple grooves mutually Connection.
Optionally, multiple grooves are uniformly arranged on the upper surface of the grinding pad body.
Optionally, the cross section of the groove is circular, triangle or quadrangle.
Optionally, the area and depth of multiple grooves are equal.
Optionally, it is interconnected between multiple grooves by irrigation canals and ditches.
Optionally, the depth of the irrigation canals and ditches is less than or equal to the depth of the groove.
Compared with prior art, the utility model is provided grinding pad and chemical mechanical polishing device, in grinding pad body Upper surface on be provided between multiple grooves, multiple grooves be interconnected, when lapping liquid drips to certain of the grinding pad When at one position, the groove of mutual conduction can cause lapping liquid rapid dispersion on grinding pad so that be provided with grinding pad Lapping liquid, so as to improve the efficiency of cmp.
Also, multiple grooves are uniformly distributed on the upper surface of the grinding pad body, and the face of the groove Product and depth are equal, in the range of the different uses of grinding pad, the area all same of groove so that the stress of wafer is more equal It is even, so as to improve the uniformity of grinding wafer.
Brief description of the drawings
Fig. 1 is the structural representation of a grinding pad.
The structural representation for the grinding pad that Fig. 2 is provided by the embodiment of the utility model one.
Fig. 3 is schematic cross-sections of the Fig. 2 on AA '.
Fig. 4 is schematic cross-sections of the Fig. 2 on BB '.
Embodiment
Fig. 1 is the structural representation of a grinding pad, as shown in figure 1, setting fluted 11, the groove on grinding pad 10 11 be not turned between multiple donuts, the different donuts, causes genesis analysis of the lapping liquid along the center of circle It is affected.If simply simply turned between donut there is also shortcoming, in the same homalographic on grinding pad Groove area is different, and the pressure of different zones can be caused uneven, the uneven of grinding wafer is caused.
In view of the above-mentioned problems, inventor provides a kind of grinding pad and chemical mechanical polishing device, the grinding pad includes grinding Grind pad body and multiple grooves;The upper surface of the grinding pad body is used for the front face with a wafer to be ground with realization Learn mechanical lapping;The groove is arranged at the upper surface of the grinding pad body, and is interconnected between multiple grooves.
Grinding pad and chemical mechanical polishing device that the utility model is provided, are provided with the upper surface of grinding pad body It is interconnected between multiple grooves, multiple grooves, when lapping liquid is dripped at a certain position of the grinding pad, phase mutual conductance Logical groove can cause lapping liquid rapid dispersion on grinding pad so that lapping liquid is provided with grinding pad, so that raising Learn the efficiency of mechanical lapping.
To make content of the present utility model more clear understandable, below in conjunction with Figure of description, to of the present utility model interior Appearance is described further.Certain the utility model is not limited to the specific embodiment, well known to the skilled artisan in the art General replace is also covered by protection domain of the present utility model.
Secondly, the utility model has carried out detailed statement using schematic diagram, when the utility model example is described in detail, in order to It is easy to explanation, schematic diagram should not be limited this not according to general ratio partial enlargement as of the present utility model.
Fig. 2 is refer to, the structural representation of its grinding pad provided by the embodiment of the utility model one.As shown in Fig. 2 The utility model provides a kind of grinding pad 20, including:Pad body 21 is ground, the upper surface of the grinding pad body 21 is used for and one The front face of wafer to be ground is to realize cmp;Multiple grooves 22, the groove 22 is arranged at the grinding pad It is interconnected between the upper surface of body 21, and multiple grooves 22.
Multiple grooves 22 are uniformly arranged on the upper surface of the grinding pad body 21, the area of multiple grooves 22 And depth is equal, i.e., the volume of multiple grooves 22 is equal.It is interconnected between multiple grooves 22 by irrigation canals and ditches 23. The depth of the irrigation canals and ditches 23 is less than or equal to the depth of the groove 22, it is preferred that the depth of the irrigation canals and ditches 23 is equal to the groove 22 depth.In the range of the different uses of the grinding pad 20, the area all same of the groove 22 so that the stress of wafer It is more uniform, so as to improve the uniformity of grinding wafer.
Fig. 3 and Fig. 4 are respectively Fig. 2 in AA ' and BB ' on schematic cross-section, as shown in Figure 3 and Figure 4, multiple grooves 22 depth and the area of cross section are equal, i.e., the shape and volume of multiple grooves 22 are equal.Multiple grooves It is interconnected between 22 by irrigation canals and ditches 23, the depth of the irrigation canals and ditches 23 is less than or equal to the depth of the groove 22, also, described recessed The width of groove 22 is more than the width of the irrigation canals and ditches 23.
In the present embodiment, the cross section of the groove 22 can be circular, triangle or quadrangle, in other embodiment In, the cross section of the groove 22 can also be other shapes well known by persons skilled in the art.It is preferred that, the groove 22 Cross section is circle, and cross section is more conducive to the scattered of lapping liquid for the circular groove 22.For example, the shape of the groove 22 Can be cone shape, cylindrical shape or hemispherical, its cross section is circle.
The grinding pad 20 that the utility model is provided, multiple grooves 22 are provided with the upper surface of grinding pad body 21, many Between the individual groove 22 be interconnected, when lapping liquid is dripped at a certain position of the grinding pad 20, mutual conduction it is recessed Groove 22 can cause lapping liquid rapid dispersion on grinding pad so that be provided with lapping liquid on grinding pad 20, so as to improve chemistry The efficiency of mechanical lapping.
Also, the groove 22 is uniformly distributed on the upper surface of the grinding pad body 21, the face of the groove 22 Product and depth are equal, in the range of the different uses of grinding pad 20, the area all same of groove 22 so that the stress of wafer is more Plus it is uniform, so as to improve the uniformity of grinding wafer.
Accordingly, the utility model also provides a kind of chemical mechanical polishing device, including:Grinding table, is fixed on described grind The grinding pad on platform, and grinding head are ground, the end face of the grinding head is used to use cooperatively grinding crystal wafer with the grinding pad.Its In, the grinding pad uses above-mentioned grinding pad 20, refer to shown in Fig. 2.
Wafer to be ground is pressed on grinding pad by grinding head and drives wafer to rotate, and grinding table then drives grinding Pad rotates in a reverse direction.Chemical mechanical polishing device also includes lapping liquid conveyer, and the lapping liquid conveyer is constantly Required lapping liquid is added between wafer and grinding pad 20, as the high speed between grinding pad and wafer to be ground is transported Turn, the reaction product of crystal column surface to be ground is constantly peeled off, and reaction product is pulled away with lapping liquid.Wafer to be ground New surface can chemically react again, and reaction product is stripped out again, so moves in circles, in mechanical lapping and chemical attack Collective effect under, make flattening wafer surface.
The grinding pad 20 includes:Pad body 21 is ground, the upper surface of the grinding pad body 21 is used to wait to grind with described The front face of wafer is ground to realize cmp;Multiple grooves 22, the groove 22 is arranged at the grinding pad body It is interconnected between 21 upper surface, and multiple grooves 22.
After the lapping liquid conveyer conveys lapping liquid at certain position on the grinding pad body 21, pass through phase At the intercommunicated groove 22, lapping liquid rapid dispersion to remaining position of the grinding pad body 21, be conducive to lapping liquid Rapid dispersion, the lapping liquid conveyed every time can most fast VELOCITY DIFFUSION between grinding pad 20 and wafer to be ground, The efficiency of cmp is improved to a certain extent.
Multiple grooves 22 are uniformly arranged on the upper surface of the grinding pad body 21, the area of multiple grooves 22 And depth is equal, i.e., the volume of multiple grooves 22 is equal.It is interconnected between multiple grooves 22 by irrigation canals and ditches 23. The depth of the irrigation canals and ditches 23 is less than or equal to the depth of the groove 22, it is preferred that the depth of the irrigation canals and ditches 23 is equal to the groove 22 depth.In the range of the different uses of the grinding pad 20, the area all same of the groove 22 so that the stress of wafer It is more uniform, so as to improve the uniformity of grinding wafer.
In the present embodiment, the cross section of the groove 22 can be circular, triangle or quadrangle, in other embodiment In, the cross section of the groove 22 can also be other shapes well known by persons skilled in the art.It is preferred that, the groove 22 Cross section is circle, and cross section is more conducive to the scattered of lapping liquid for the circular groove 22.For example, the shape of the groove 22 Can be cone shape, cylindrical shape or hemispherical, its cross section is circle.
In summary, the utility model is provided grinding pad and chemical mechanical polishing device, in the upper table of grinding pad body It is provided between multiple grooves, multiple grooves and is interconnected on face, when lapping liquid drips to a certain position of the grinding pad During place, the groove of mutual conduction can cause lapping liquid rapid dispersion on grinding pad so that lapping liquid is provided with grinding pad, So as to improve the efficiency of cmp.
Also, multiple grooves are uniformly distributed on the upper surface of the grinding pad body, and perpendicular to described On the direction for grinding pad body, the area and depth of the groove are equal, in the range of the different uses of grinding pad, groove Area all same so that wafer is more uniformly stressed, so as to improve the uniformity of grinding wafer.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the utility model scope Calmly, the those of ordinary skill in the utility model field does according to the disclosure above content any change, modification, belonging to right will Seek the protection domain of book.

Claims (12)

1. a kind of grinding pad, for cmp, it is characterised in that including:
Pad body is ground, the upper surface of the grinding pad body is used to the front face of a wafer to be ground realize chemical machine Tool is ground;
Multiple grooves, the groove is arranged at the upper surface of the grinding pad body, and is interconnected between multiple grooves.
2. grinding pad as claimed in claim 1, it is characterised in that multiple grooves are uniformly arranged on the grinding pad body Upper surface.
3. grinding pad as claimed in claim 1, it is characterised in that the cross section of the groove is circular, triangle or four sides Shape.
4. grinding pad as claimed in claim 1, it is characterised in that the area and depth of multiple grooves are equal.
5. grinding pad as claimed in claim 1, it is characterised in that be interconnected between multiple grooves by irrigation canals and ditches.
6. grinding pad as claimed in claim 5, it is characterised in that the depth of the irrigation canals and ditches is less than or equal to the depth of the groove Degree.
7. a kind of chemical mechanical polishing device, including:Grinding table, is fixed on the grinding pad on the grinding table, and grinding head, The end face of the grinding head is used to use cooperatively grinding crystal wafer with the grinding pad, it is characterised in that the grinding pad includes:
Pad body is ground, the upper surface of the grinding pad body is used to the front face of a wafer to be ground realize chemical machine Tool is ground;
Multiple grooves, the groove is arranged at the upper surface of the grinding pad body, and is interconnected between multiple grooves.
8. chemical mechanical polishing device as claimed in claim 7, it is characterised in that multiple grooves are uniformly arranged on described Grind the upper surface of pad body.
9. chemical mechanical polishing device as claimed in claim 7, it is characterised in that the cross section of the groove is circle, three Angular or quadrangle.
10. chemical mechanical polishing device as claimed in claim 7, it is characterised in that the area and depth of multiple grooves It is equal.
11. chemical mechanical polishing device as claimed in claim 7, it is characterised in that pass through irrigation canals and ditches between multiple grooves It is interconnected.
12. chemical mechanical polishing device as claimed in claim 11, it is characterised in that the depth of the irrigation canals and ditches is less than or equal to institute State the depth of groove.
CN201720255456.1U 2017-03-15 2017-03-15 Grinding pad and chemical mechanical polishing device Active CN206567983U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720255456.1U CN206567983U (en) 2017-03-15 2017-03-15 Grinding pad and chemical mechanical polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720255456.1U CN206567983U (en) 2017-03-15 2017-03-15 Grinding pad and chemical mechanical polishing device

Publications (1)

Publication Number Publication Date
CN206567983U true CN206567983U (en) 2017-10-20

Family

ID=60054286

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201720255456.1U Active CN206567983U (en) 2017-03-15 2017-03-15 Grinding pad and chemical mechanical polishing device

Country Status (1)

Country Link
CN (1) CN206567983U (en)

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