CN206564260U - A kind of high electricity conversion polycrystalline silicon device - Google Patents
A kind of high electricity conversion polycrystalline silicon device Download PDFInfo
- Publication number
- CN206564260U CN206564260U CN201720214465.6U CN201720214465U CN206564260U CN 206564260 U CN206564260 U CN 206564260U CN 201720214465 U CN201720214465 U CN 201720214465U CN 206564260 U CN206564260 U CN 206564260U
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- China
- Prior art keywords
- polycrystalline silicon
- silicon device
- device body
- notacoria
- layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of high electricity conversion polycrystalline silicon device, including polycrystalline silicon device body and frame, the side of polycrystalline silicon device body is provided with frame, frame is internally provided with notacoria, the side of notacoria is provided with the first EVA adhesive film, the end of notacoria is provided with terminal box, and notacoria includes waterproof layer, reflecting layer, barrier layer and adhesive layer.The utility model is provided with notacoria and polycrystal silicon cell lamella, with good waterproof antiwear performance, and have higher ultraviolet reflection rate, it can be chronically exposed under sunshine, and the caloric receptivity of polycrystalline silicon device body back plate surface can be effectively reduced, improve the conversion efficiency of polycrystalline silicon device body, it slow down the rate of decay of polycrystalline silicon device body, extend the service life of polycrystalline silicon device body, utilization rate of the sunshine in polycrystalline silicon device body is improved, and effectively raises the photoelectric transformation efficiency of polycrystalline silicon device body.
Description
Technical field
The utility model is related to a kind of polycrystalline silicon device, more particularly to a kind of high electricity conversion polycrystalline silicon device.
Background technology
Energy shortage and environmental pollution are century two significant problems being faced of the mankind, as international community's economic development
Bottleneck, solar energy as cleanliness without any pollution regenerative resource provide solve the two problems preferred embodiments.Relative to
For common batteries and recyclable rechargeable battery, solar cell belongs to more energy efficient environmentally friendly green product.Solar panel
Typically use out of doors, the effect of foreboard mainly protection battery exempts from machinery and the shadow of weathering wherein in solar panel
Ring.In order to make full use of light, foreboard must have high light transmittance in certain spectral region.At present, how to develop
High-photoelectric transformation efficiency height, long lifespan, performance stabilization and solar cell with low cost have caused global extensive
Concern.Therefore, the need for based on era development, solar cell has wide development space.
Solar panel be by absorbing sunshine, solar radiant energy is straight by photoelectric effect or photochemical effect
Connect or indirect conversion is into the device of electric energy, the main material of most of solar panel is " silicon ", but because cost of manufacture is very big,
So that it largely can't widely and commonly be used.Because solar cell is directly exposed in air, it is vulnerable to water
The erosion of steam, sour gas, high/low temperature and ultraviolet etc., cause opto-electronic conversion performance decay, in the market it is traditional too
Positive energy notacoria reflectivity is 80-85%, and substantial amounts of luminous energy is absorbed by solar cell backboard film may result in battery component hair
Heat, influences battery life, therefore the protective effect of solar cell backboard film is particularly important.
Utility model content
The technical problems to be solved in the utility model is to overcome the defect of prior art there is provided a kind of high electricity conversion
Polycrystalline silicon device.
In order to solve the above-mentioned technical problem, the utility model provides following technical scheme：
A kind of high electricity conversion polycrystalline silicon device of the utility model, including polycrystalline silicon device body and frame, it is described
The side of polycrystalline silicon device body is provided with frame, and the frame is internally provided with notacoria, and the side of the notacoria is provided with
First EVA adhesive film, the side of first EVA adhesive film is provided with polycrystal silicon cell lamella, the one of the polycrystal silicon cell lamella
Side is provided with the second EVA adhesive film, and the side of second EVA adhesive film is provided with glass, and the end of the notacoria is provided with wiring
Box, the notacoria includes waterproof layer, reflecting layer, barrier layer and adhesive layer.
As a kind of optimal technical scheme of the present utility model, the waterproof layer is Thermoplastic polyurethane elastomer material system
Into.
As a kind of optimal technical scheme of the present utility model, the reflecting layer is inorganic pigment, by aluminium, zinc oxide, oxygen
Change titanium and metal oxidation, and mixed with PET PET material.
As a kind of optimal technical scheme of the present utility model, the barrier layer is chemical synthesis polyester material.
As a kind of optimal technical scheme of the present utility model, the adhesive layer is resinoid unsaturated polyester (UP) tree
Fat material is made.
As a kind of optimal technical scheme of the present utility model, the polycrystal silicon cell lamella includes anti-reflection film, polycrystalline
Silicon chip and nanometer film.
As a kind of optimal technical scheme of the present utility model, the glass is miniature convex lens.
Compared with prior art, the beneficial effects of the utility model are as follows：
The utility model is provided with notacoria and polycrystal silicon cell lamella, with good waterproof antiwear performance, and has higher
Ultraviolet reflection rate, can be chronically exposed under sunshine, and polycrystalline silicon device body back plate surface can be effectively reduced
Caloric receptivity, improve polycrystalline silicon device body conversion efficiency, slow down the rate of decay of polycrystalline silicon device body, extend many
The service life of crystal silicon device body, improves utilization rate of the sunshine in polycrystalline silicon device body, and effectively raise
The photoelectric transformation efficiency of polycrystalline silicon device body.
Brief description of the drawings
Accompanying drawing is used for providing further understanding to of the present utility model, and constitutes a part for specification, with this practicality
New embodiment is used to explain the utility model together, does not constitute to limitation of the present utility model.In the accompanying drawings：
Fig. 1 is overall structure diagram of the present utility model；
Fig. 2 is notacoria structural representation of the present utility model；
Fig. 3 is glass structure schematic diagram of the present utility model；
In figure：1st, polycrystalline silicon device body；2nd, frame；3rd, notacoria；4th, the first EVA adhesive film；5th, polycrystal silicon cell lamella；6、
Second EVA adhesive film；7th, glass；8th, terminal box；9th, waterproof layer；10th, reflecting layer；11st, barrier layer；12nd, adhesive layer；13rd, anti-reflection film；
14th, polysilicon chip；15th, nanometer film.
Embodiment
Preferred embodiment of the present utility model is illustrated below in conjunction with accompanying drawing, it will be appreciated that described herein excellent
Select embodiment to be merely to illustrate and explain the utility model, be not used to limit the utility model.
Embodiment 1
As Figure 1-3, the utility model provides a kind of high electricity conversion polycrystalline silicon device, including polycrystalline silicon device
Body 1 and frame 2, the side of polycrystalline silicon device body 1 is provided with frame 2, and frame 2 is internally provided with notacoria 3, notacoria 3
Side is provided with the first EVA adhesive film 4, and the side of the first EVA adhesive film 4 is provided with polycrystal silicon cell lamella 5, polycrystal silicon cell lamella
5 side is provided with the second EVA adhesive film 6, and the side of the second EVA adhesive film 6 is provided with glass 7, and the end of notacoria 3 is provided with wiring
Box 8, notacoria 3 includes waterproof layer 9, reflecting layer 10, barrier layer 11 and adhesive layer 12.
Further, waterproof layer 9 is made up of Thermoplastic polyurethane elastomer material, waterproof LP blades, it is to avoid outdoor ring
Erosion of the border to polycrystalline silicon device body 1, effectively extends the service life of polycrystalline silicon device body 1.
Reflecting layer 10 is inorganic pigment, by aluminium, zinc oxide, titanium oxide and metal oxidation, and and poly terephthalic acid
Second diester PET material is mixed, and can be reflected strong sunshine and harm ray, be played a part of avoiding being scorched by sunlight.
Barrier layer 11 is chemical synthesis polyester material, includes polystyrene, polyvinyl chloride, polyurethane and polyethylene mixed
It is combined into, effective partiting thermal insulation.
Adhesive layer 12 is made up of resinoid unsaturated polyester resin material, and stickiness is good, and tolerance, resistant to corrosion is prolonged
The service life of polycrystalline silicon device body 1 is grown.
Polycrystal silicon cell lamella 5 includes anti-reflection film 13, polysilicon chip 14 and nanometer film 15, and anti-reflection film 13 adds polycrystalline
The contact surface of silicon chip 14 and sunshine, while being added the electric conductivity of polysilicon chip 14 using nanometer film 15, is effectively raised
Improve the conversion efficiency of polycrystalline silicon device body 1.
Glass 7 is miniature convex lens, the contact surface of polycrystalline silicon battery plate and sunshine is added, while can also effectively inhale
Receive luminous energy.
The integral thickness of notacoria 3 is 180-200um, and convenient use is installed.
Specifically, polycrystalline silicon device body 1 is respectively arranged with waterproof layer 9, reflecting layer 10 and barrier layer 11 at notacoria 3,
Effective waterproof antiultraviolet is heat-insulated, slow down the rate of decay of polycrystal silicon cell component, extends making for polycrystal silicon cell component
With the life-span, in addition, glass 7 is miniature convex lens, the contact surface of polycrystalline silicon battery plate and sunshine is added, while can also be effective
Absorption luminous energy, in addition, passing through fitted seal crystal silicon device sheet between adhesive layer 12, the first EVA adhesive film 4 and the second EVA adhesive film 6
Body 1 is encapsulated, and effectively increases utilization rate of the sunshine in polycrystal silicon cell component.
The utility model is provided with notacoria 3 and polycrystal silicon cell lamella 5, with good waterproof antiwear performance, and have compared with
High ultraviolet reflection rate, can be chronically exposed under sunshine, and can be effectively reduced the backboard table of polycrystalline silicon device body 1
The caloric receptivity in face, improves the conversion efficiency of polycrystalline silicon device body 1, slow down the rate of decay of polycrystalline silicon device body 1, extends
The service life of polycrystalline silicon device body 1, improves utilization rate of the sunshine in polycrystalline silicon device body 1, and effectively
Improve the photoelectric transformation efficiency of polycrystalline silicon device body 1.
Finally it should be noted that：Preferred embodiment of the present utility model is the foregoing is only, this is not limited to
Utility model, although the utility model is described in detail with reference to the foregoing embodiments, for those skilled in the art
For, it can still modify to the technical scheme described in foregoing embodiments, or to which part technical characteristic
Carry out equivalent substitution.It is all it is of the present utility model spirit and principle within, any modification, equivalent substitution and improvements made etc.,
It should be included within protection domain of the present utility model.
Claims (7)
1. a kind of high electricity conversion polycrystalline silicon device, including polycrystalline silicon device body (1) and frame (2), it is characterised in that
The side of the polycrystalline silicon device body (1) is provided with frame (2), and the frame (2) is internally provided with notacoria (3), described
The side of notacoria (3) is provided with the first EVA adhesive film (4), and the side of first EVA adhesive film (4) is provided with polycrystalline silicon battery plate
Layer (5), the side of the polycrystal silicon cell lamella (5) is provided with the second EVA adhesive film (6), the one of second EVA adhesive film (6)
Side is provided with glass (7), and the end of the notacoria (3) is provided with terminal box (8), the notacoria (3) include waterproof layer (9),
Reflecting layer (10), barrier layer (11) and adhesive layer (12).
2. a kind of high electricity conversion polycrystalline silicon device according to claim 1, it is characterised in that the waterproof layer
(9) it is made up of Thermoplastic polyurethane elastomer material.
3. a kind of high electricity conversion polycrystalline silicon device according to claim 1, it is characterised in that the reflecting layer
(10) be inorganic pigment, by aluminium, zinc oxide, titanium oxide and metal oxidation, and with PET PET material
Mixing.
4. a kind of high electricity conversion polycrystalline silicon device according to claim 1, it is characterised in that the barrier layer
(11) it is chemical synthesis polyester material.
5. a kind of high electricity conversion polycrystalline silicon device according to claim 1, it is characterised in that the adhesive layer
(12) it is made up of resinoid unsaturated polyester resin material.
6. a kind of high electricity conversion polycrystalline silicon device according to claim 1, it is characterised in that the polysilicon electricity
Pond lamella (5) includes anti-reflection film (13), polysilicon chip (14) and nanometer film (15).
7. a kind of high electricity conversion polycrystalline silicon device according to claim 1, it is characterised in that the glass (7)
For miniature convex lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720214465.6U CN206564260U (en) | 2017-03-07 | 2017-03-07 | A kind of high electricity conversion polycrystalline silicon device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720214465.6U CN206564260U (en) | 2017-03-07 | 2017-03-07 | A kind of high electricity conversion polycrystalline silicon device |
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| Publication Number | Publication Date |
|---|---|
| CN206564260U true CN206564260U (en) | 2017-10-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720214465.6U Expired - Fee Related CN206564260U (en) | 2017-03-07 | 2017-03-07 | A kind of high electricity conversion polycrystalline silicon device |
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| Country | Link |
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| CN (1) | CN206564260U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421937A (en) * | 2021-06-09 | 2021-09-21 | 江苏京尚圆电气集团有限公司 | Solar composite membrane battery |
-
2017
- 2017-03-07 CN CN201720214465.6U patent/CN206564260U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421937A (en) * | 2021-06-09 | 2021-09-21 | 江苏京尚圆电气集团有限公司 | Solar composite membrane battery |
| CN113421937B (en) * | 2021-06-09 | 2022-11-25 | 江苏京尚圆电气集团有限公司 | Solar composite membrane battery |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171017 Termination date: 20200307 |
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| CF01 | Termination of patent right due to non-payment of annual fee |