CN206541020U - A kind of transmitting chip for millimeter wave Vehicular radar system - Google Patents
A kind of transmitting chip for millimeter wave Vehicular radar system Download PDFInfo
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- CN206541020U CN206541020U CN201720025384.1U CN201720025384U CN206541020U CN 206541020 U CN206541020 U CN 206541020U CN 201720025384 U CN201720025384 U CN 201720025384U CN 206541020 U CN206541020 U CN 206541020U
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Abstract
The utility model discloses a kind of transmitting chip for millimeter wave Vehicular radar system, fine tuning control source interface and coarse-tuning voltage input interface be connected including voltage controlled oscillator and with voltage controlled oscillator, for controlling offer fundamental frequency and two frequency multiplication two paths of signals, the voltage controlled oscillator is also connected with the first buffer, the 3rd power amplifier, the first balun in turn, and first balun is also associated with local oscillation signal output port；First buffer is also associated with frequency divider, frequency divider is also associated with RF signal output mouthful, the voltage controlled oscillator is also connected with the second buffer, the second balun, power splitter in turn, the power splitter has been also respectively connected with the first power amplifier and the second power amplifier, and first power amplifier, the second power amplifier are connected with the first signal emission port, secondary signal emission port respectively.
Description
Technical field
The utility model is related to the fields such as radio frequency/millimeter wave chip design art, vehicle radar system front-end circuit, specifically
Say, be a kind of transmitting chip for millimeter wave Vehicular radar system.
Background technology
The characteristics of radar is according to electromagenetic wave radiation energy can be divided into pulse radar and continuous wave radar.With pulse radar phase
Than continuous wave radar transmission power is with the time without significant change, it is easier to which and radio-frequency front-end is compatible, simple in construction thus cost compared with
It is low, the mainstream technology as vehicle front-viewing radar.CW with frequency modulation (FMCW) radar system include antenna, radio frequency receiving and transmitting front end,
Signal processing module, warning device and automobile control unit.Radar utilizes the echo that barrier reflection is run into after electromagnetic radiation
Signal is to its continuous detection, and radio frequency receiving and transmitting front end receives echo-signal by antenna and carries out difference frequency processing with transmission signal, then
Deliver to rear class signal processing module, detected according to intermediate-freuqncy signal target relative velocity and apart from etc. information, sent to driver
Alarm, makes driver react in time, while radar signal processor reaches automobile control unit, is according to circumstances braked automatically
Or slow down, it is ensured that traffic safety.
Fmcw radar launch continuous modulation signal, signal frequency in the time domain according to modulation voltage rule linear rise or
Person declines, and conventional modulated signal includes square-wave signal, sawtooth signal and triangular signal etc..Fig. 1 is to use triangular wave
The fmcw radar range measurement principle schematic diagram of modulation format, upper figure is transmission signal with receiving the waveform of signal, figure below for mixing with
The intermediate-freuqncy signal produced afterwards.FM signal centre frequency is fo, TcFor FM signal cycle, BcFor modulating bandwidth.Signal rose
Journey, transmission signal is expressed as f with receiving the beat frequency of signalbup；Signal declines process, transmission signal and the difference for receiving signal
Frequent rate is expressed as fbdn.When target remains static, transmission signal is received by the delay of Δ T time by radar, Δ T=2R/
C is the light velocity in c, formula, and R is the distance between radar and target.Now raising and lowering process beat frequency fbup=fbdn=
fr1=f1-f2, the distance between radar and target object R=cTc·fr1/4Bc.If target is moved, reflected signal
Comprising one as the Doppler frequency shift f caused by target relative movementd。fd=2Vr·fo/ c, VrIt is how general for speed of related movement
Strangling frequency displacement can cause difference frequency signal to produce change, wherein the difference frequency signal f of signal uphill process in raising and lowering processbup=
fr2-fd, the difference frequency signal f of signal decline processbdn=fr2+fd, therefore radar and target relative velocity V can be calculatedr=
c·(fbdn-fbup)/4fo, when target close to radar when, relative velocity value is just；When target is away from radar, relatively
Speed value is negative.Based on apart from R and relative velocity VrFormula, may further determine that radar system processing distance and relative
The resolution ratio of speed.
The detection of target is main to be determined by radar emission and the wave beam received.Pass through integrated multiple antennas, multiple transmitting-receivings
The digital beam froming system that passage and Digital Signal Processing are realized, can complete the processing of multiple signals, broadening radar prison
The angle of survey.In addition, millimeter wave Vehicular radar system also needs to meet the application requirement of different distance, wherein 76GHz~77GHz
Frequency range, which is used for detection at a distance, 77GHz~81GHz frequency ranges, to be used to closely detect, so as to realize high accuracy number Wave beam forming
System.
Radio frequency receiving and transmitting front end is the nucleus module of radar system.The voltage controlled oscillator that transmission signal is internally integrated by emitter
Produced in the presence of modulated signal, its output signal part passes through power amplifier and amplifies output, and a part is used as reception
The echo-signal that machine local oscillation signal reflects with target is mixed.The amplitude and phase noise of transmission signal can influence signal spectrum
With noise bottom plate.The later intermediate-freuqncy signal noise spectral density of phase noise increase mixing, the overall signal to noise ratio of reduction radar system.
When applying in multiple target detections, too high phase noise makes it possible to the intermediate-freuqncy signal that the reflection of distal portion target is produced
Covered by the intermediate-freuqncy signal noise sideband of the more power that target is produced near radar, cause system can not be by these mesh
Mark makes a distinction.
Existing vehicle-mounted millimeter wave radar emission chip solution is divided into two kinds.A kind of form of use discrete device, passes through
Single voltage controlled oscillator, frequency multiplier and power amplifier chip realize the transmitting of modulated signal, program integrated level is relatively low,
It is unfavorable for the demand of car radar miniaturization.Another scheme uses fully integrated form, and all functional units are in chip
Realize in portion.Existing covering 76GHz~81GHz frequency range transmitting chip schemes need to realize respectively far using two voltage controlled oscillators
Distance and closely frequency range, chip design are still complex, it is necessary to increase the extra circuit such as balun, power combiner
Coordinate two oscillator cooperations so that chip area is larger, and power consumption is consequently increased.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art to be applied at a distance and closely there is provided one kind
The transmitting chip of the vehicle-mounted millimeter wave radar of detection, the chip is based on transistor cutoff frequency fT=200GHz SiGe
BiCMOS technique, completes the processing of 76GHz~81GHz frequency range receiving and transmitting signals with reference to the reception chip of radar system, passes through jointly
The wideband voltage controlled oscillator and high output power amplifier of integrated low phase noise, realize fully integrated transmitting chip, high-performance, low
Cost and miniaturization.
A kind of transmitting chip for millimeter wave Vehicular radar system, including be connected with voltage controlled oscillator, for controlling
The fine tuning control source interface and coarse-tuning voltage input interface of fundamental frequency and two frequency multiplication two paths of signals, the VCO are provided
Device is also connected with the first buffer, the 3rd power amplifier, the first balun in turn, and first balun is also associated with local oscillation signal
Output port；First buffer is also associated with 16 frequency dividers, 16 frequency dividers connection RF signal output mouthful；It is described
Voltage controlled oscillator is also connected with the second buffer, the second balun, power splitter in turn, and the power splitter has been also respectively connected with the first work(
Rate amplifier and the second power amplifier, first power amplifier, the second power amplifier are launched with the first signal respectively
Port, the connection of secondary signal emission port.
Specifically, the first power amplifier and the second power amplifier are all multi-stage cascade power amplifier, described first
Power amplifier is identical with the second power amplifier structure, the difference cascode amplifier all including three-stage cascade.
Specifically, the voltage controlled oscillator includes being connected with first between transistor T1, T2, transistor T1, T2 base stage
The second fine tuning capacitive branch and coarse tuning capacitive branch are connected between fine tuning capacitive branch, transistor T1, T2 emitter stage.
The two ends of second fine tuning capacitive branch are connected with the two ends of coarse tuning capacitive branch respectively.
Further, the first fine tuning capacitive branch include resistance R5, R6, varactor CVAR5, CVAR6 and
Electric capacity C7, C8.Resistance R5, R6 are connected with varactor CVAR5 and CVAR6 and access electric capacity C7, C8 one end, electric capacity respectively
Base stage of C7, C8 other end respectively with transistor T1, T2 is connected.Varactor CVAR5 and CVAR6 common port connection are thin
VT input interface, varactor CVAR5 and the CVAR6 other end passes through resistance R5 and R6 connection low level respectively
VSS；Fine tuning control source interface provides fine tuning voltage to circuit.
The second fine tuning capacitive branch includes resistance R1, R2, varactor CVAR1, CVAR2 and electric capacity C3, C4,
Resistance R1, R2 are connected with varactor CVAR1, CVAR2 and access electric capacity C3, C4 one end respectively, and electric capacity C3, C4's is another
Emitter stage of the one end respectively with transistor T1, T2 is connected.Varactor CVAR1 and CVAR2 common port equally connects fine tuning
Control source interface, the other end passes through resistance R1 and R2 connection low level VSS respectively；Between described transistor T1, T2 base stage
Also connected by transmission line L1, L2, bias voltage interface is also associated between transmission line L1, L2, receive bias voltage；It is described
Electric capacity C1 is also associated between transistor T1 base stage and emitter stage, electricity is also associated between transistor T2 base stage and emitter stage
Hold C2.
The coarse tuning capacitive branch includes resistance R3, R4, varactor CVAR3, CVAR4 and electric capacity C5, C6, electricity
Resistance R3, R4 are connected with varactor CVAR3, CVAR4 and access electric capacity C5, C6 one end respectively, and electric capacity C5, C6's is another
The emitter stage respectively with transistor T1, T2 is held to be connected.The connection coarse-tuning voltage input of varactor CVAR3, CVAR4 common port
Interface, the other end passes through resistance R3 and R4 connection low level VSS respectively.
Also pass through transmission line L3, L4 formation path, described transmission line L3, L4 between described transistor T1, T2 emitter stage
One end be connected between low level VSS, transistor T1, T2 colelctor electrode and be connected with successively by transmission line L11, resistance R7
Transmission line L5, L7, L8, L6 of connection, electric capacity C9 one end are connected between transmission line L5, L7, electric capacity C9 other end connection
Between transmission line L8, L6, described transistor T1, T2 colelctor electrode connect transmission line L5, L6 one end, the transmission line respectively
L7, L8 common port also pass through transmission line L9 connection power supplys VCC.
Specifically, first buffer is identical with the second buffer structure, first buffer include transistor T3,
T4, input signal is conveyed to transistor T3, T4 base stage through capacitance C12, C13 respectively, and transistor T3, T4 base stage is connected respectively
It is connected after R8, R9；Transistor T3, T4 colelctor electrode is connected to power supply VCC.Transistor T3 emitter stages connection resistance R10 one end and
Transistor T5 base stages, transistor T4 emitter stages connection resistance R11 one end and transistor T6 base stages, resistance R10 and the R11 other end
It is connected to low level VSS；Transistor T5 colelctor electrodes pass through transmission line L13 connection transistor T7 emitter stages, transistor T6 colelctor electrodes
By transmission line L14 connection transistor T8 emitter stages, transistor T5, T6 emitter stage are connected to be connect through transmission line L19 and resistance R12
Ground, transistor T7 and T8 base stage connection receives bias voltage, and transistor T7, T8 colelctor electrode are connected by transmission line L15, L16 respectively
Power supply VCC is connected to, transistor T7, T8 colelctor electrode are also connected to buffer output end mouthful through transmission line L17 and L18 respectively.
Specifically, the structure of two-stage differential cascode amplifier is identical before the first power amplifier of transmitting chip, bag
Transistor T9, T10 are included, bias voltage is connected to transistor T9, T10 base stage by transmission line L27 and L28；Input signal passes through
Transmission line L22, L23, L25 are transferred to transistor T9 base stages；Input signal also passes through transmission line L22, electric capacity C15, transmission line L26
It is connected to transistor T10 base stages；It is connected to ground by electric capacity C14 between transmission line L23, L25；Electric capacity C15, transmission line L26 it
Between be connected to ground by transmission line L24；Transistor T9, T10 emitter stage are connected to after being connected by transmission line L29, resistance R13
Ground；Transistor T9, T10 colelctor electrode are connected to transistor T11, T12 emitter stage, transistor by transmission line L30, L31 respectively
T11, T12 base stage receive bias voltage after being connected, and transistor T11, T12 colelctor electrode are connected to by transmission line L32, L33 respectively
Power supply VCC, transistor T11, T12 colelctor electrode also passes through transmission line L35, L34 output signal respectively.
Specifically, third level difference cascode amplifier includes transistor T13, T14, and bias voltage passes through transmission line
L36, L37 are connected to transistor T13 and T14 base stage, and input signal is separately input to transistor T13, T14 base stage, transistor
T13, T14 emitter stage are grounded by transmission line L38, resistance R14；Transistor T13 colelctor electrodes are connected by transmission line L39, L41
To power supply VCC, transistor T14 colelctor electrodes are connected to power supply VCC by transmission line L40, L42；Transistor T13 colelctor electrodes also lead to
Cross transmission line L39, electric capacity C16, transmission line L43 and be connected to transistor T15 emitter stages；Transistor T14 colelctor electrodes also pass through transmission
Line L40, electric capacity C17, transmission line L44 are connected to transistor T16 emitter stages；Transistor T15, T16 emitter stage pass through transmission respectively
It is connected to ground through transmission line L45, resistance R15 after line L46, L47 connection；Transistor T15 colelctor electrodes pass through transmission line L48, L50
Power supply VCC is connected to, transistor T16 colelctor electrodes are connected to power supply VCC by transmission line L49, L51；Output signal is respectively by crystalline substance
Body pipe T15, T16 colelctor electrode is exported by transmission line L48, L49；The connection of transistor T15, T16 base stage receives bias voltage.
Specifically, the two-divider that 16 frequency divider is cascaded by level Four is constituted, and it is defeated that every grade of two-divider includes radio frequency
Enter to transistor, switch to transistor, difference amplifier and source follower；Transistor T17, T18 formation radio frequency input are to crystalline substance
Body pipe, transistor T17, T18 base stage connects reception input signal respectively, and bias voltage is connected to transistor through resistance R16 and R17
T17, T18 base stage, transistor T17, T18 emitter stage are connected to ground through resistance R18；Transistor T17 colelctor electrodes through transmission line L54,
L52 is connected to voltage VCC；Transistor T18 colelctor electrodes are connected to voltage VCC through transmission line L55, L53.
Transistor T19, T20, T21, T22 composition switch are to transistor, and transistor T19, T20 emitter stage are connected and by passing
Defeated line L60, L62, resistance R19 are connected to ground；Transistor T21, T22 emitter stage are connected and pass through transmission line L61, L63, resistance
R19 is connected to ground；Transistor T19 is connected with T22 colelctor electrodes, and transistor T19, T22 base stage connect opposite in phase input letter respectively
Number；Transistor T20, T21 colelctor electrode are connected, and transistor T20, T21 base stage equally connect the input signal of opposite in phase respectively；It is brilliant
Body pipe T21, T22 emitter stage are connected and are connected to transistor by transmission line L61, L58, electric capacity C18, transmission line L56, L54
T17 colelctor electrodes；Transistor T19, T20 emitter stage are connected and connected by transmission line L60, L59, electric capacity C19, transmission line L57, L55
It is connected to transistor T18 colelctor electrodes.
Difference amplifier includes transistor T23, T24, and transistor T23, T24 emitter stage are connected and connected by resistance R24
To ground, resistance R20 is connected between transistor T23 base stages, colelctor electrode, resistance is connected between transistor T24 base stages, colelctor electrode
R21, transistor T23, T24 colelctor electrode are connected to power supply VCC by resistance R22, R23 respectively；Transistor T23 base stages are connected respectively
There is transistor T19, T22 colelctor electrode, transistor T24 base stages are connected to transistor T20, T21 colelctor electrode.
Transistor T25, T26, T27, T28 constitute source follower, and transistor T25, T26, T27, T28 emitter stage leads to respectively
Cross resistance R25, R26, R27, R28 and be connected to ground；Transistor T25, T26, T27, T28 colelctor electrode is connected to power supply VCC.T25、
T26 base stages are connected to power supply VCC by resistance R23, R22 respectively.Transistor T27, T28 emitter stage connects opposite in phase respectively
Output signal port；Transistor T25 emitter stages connect transistor T27 base stages, transistor T27 emitter stages feedback link to transistor
T19 and T21 base stages；Transistor T26 emitter stages connect transistor T28 base stages, transistor T28 emitter stages feedback link to transistor
T20 and T22 base stages.
The utility model compared with prior art, with advantages below and beneficial effect：
(1) the utility model uses SiGe BiCMOS techniques, and the reception chip devised with radar system is completed jointly
The transmitting chip of 76GHz~81GHz frequency ranges receiving and transmitting signal processing.
(2) wideband voltage controlled oscillator and high output power amplifier of the integrated low phase noise of the utility model, realizes hair
Core shooting piece is fully integrated, high-performance, low cost and miniaturization.
(3) the utility model effect is protruded, and worth large-scale promotion is used.
Brief description of the drawings
Fig. 1 is fmcw radar range measurement principle schematic diagram.
Fig. 2 is the structural representation of embodiment 1.
Fig. 3 is the circuit theory diagrams of embodiment 2.
Fig. 4 is Colpitts bikini oscillator fundamental diagrams.
Fig. 5 is the circuit theory diagrams of embodiment 3.
Fig. 6 is the circuit theory diagrams of embodiment 4.
Fig. 7 is the circuit theory diagrams of two-stage circuit before the first power amplifier, the second power amplifier in embodiment 5.
Fig. 8 is the first power amplifier, the circuit theory diagrams of the second power amplifier tertiary circuit in embodiment 5.
Fig. 9 is the circuit theory diagrams of embodiment 6.
Wherein, reference is as follows：1- voltage controlled oscillators, the buffers of 2- first, the power amplifiers of 3- the 3rd, 4-
One balun, the frequency dividers of 5- 16, the buffers of 6- second, the baluns of 7- second, 8- power splitters, the power amplifiers of 9- second, 10-
One power amplifier, 11- power detectors, 12- temperature sensors, 13- fine tuning control source interfaces, 14- coarse-tuning voltages
Input interface, 15- local oscillation signal output ports, 16- RF signal outputs mouthful, 17- the first signal emission ports, 18- second
Signal emission port.
Embodiment
The utility model is described in further detail with reference to embodiment, but embodiment of the present utility model is not
It is limited to this.
Embodiment 1
As shown in Fig. 2 a kind of transmitting chip for millimeter wave Vehicular radar system, including described and voltage controlled oscillator 1
Connection, for controlling to provide fundamental frequency and the fine tuning control source interface (FINE) 13 of two frequency multiplication two paths of signals and coarse tuning
Control source interface (COARSE) 14, the voltage controlled oscillator be also connected with turn the first buffer 2, the 3rd power amplifier 3,
First balun 4, first balun is also associated with local oscillation signal output port (LOout) 15.3rd power amplifier 3 is
Medium gain power amplifier.
First buffer is also associated with the frequency divider of 16 frequency divider 5,16 and is also associated with RF signal output mouthful
(DIVout)16。
It is worth special instruction, fundamental frequency signal output frequency is 38GHz~40.5GHz, and a part of fundamental frequency signal passes through
Switch to Single-end output through the first balun after the amplification of 3rd power amplifier, local oscillation signal is provided for the reception chip of radar system.
The frequency that another part fundamental frequency signal produces 2.4GHz or so by 16 frequency dividers in DIVout, is used as penetrating for outside phaselocked loop
Frequency input signal.
The voltage controlled oscillator is also connected with the second buffer 6, the second balun 7, power splitter 8 in turn, and the power splitter is also
It is connected to the first power amplifier 10 and the second power amplifier 9, first power amplifier, the second power amplifier
Connected respectively with the first signal emission port (TXoutA) 17, secondary signal emission port (TXoutB) 18.
Fundamental frequency signal carries out process of frequency multiplication inside voltage controlled oscillator, 76GHz~81GHz oscillator signals is exported, by work(
Divide device to be converted into after the identical signal of two-way being exported by the first power amplifier, the amplification of the second power amplifier respectively, provide altogether
Four tunnel output signals.First power amplifier, the second power amplifier are the power amplifier of multi-stage cascade.First power
Amplifier, the second power amplifier pass through the first signal emission port and secondary signal emission port output signal respectively.First
Power amplifier, the second power amplifier emission port are also associated with power detector 11.Power detector is used to detect four tunnels
The size of transmission signal.
Temperature sensor 12 is additionally provided with the chip is used for the temperature of acquisition chip.
Embodiment 2
The present embodiment and the difference of embodiment 1 are, further, as shown in figure 3, in voltage controlled oscillator, core is shaken
Swing circuit and be operated in 38GHz~40.5GHz frequency ranges, fundamental frequency signal is defeated by the port Voutp@w and Voutn@w of voltage controlled oscillator
Go out；Second harmonic frequency, the port Voutp@2w that the fundamental frequency signal by frequency multiplication passes through voltage controlled oscillator are produced at node A and B
With Voutn@2w outputs；The port Voutp@w and Voutn@w are connected with the first buffer, the port Voutp@2w and
Voutn@2w are connected with the second buffer.
The voltage controlled oscillator includes being connected with the first fine tuning electricity between transistor T1, T2, transistor T1, T2 base stage
Hold and be connected with the second fine tuning capacitive branch and coarse tuning capacitive branch between branch road, the emitter stage of transistor.Second fine tuning
The two ends of capacitive branch are connected with the two ends of coarse tuning capacitive branch respectively.
The first fine tuning capacitive branch includes resistance R5, R6, varactor CVAR5, CVAR6 and electric capacity C7, C8.
Resistance R5, R6 are connected with varactor CVAR5 and CVAR6 and access electric capacity C7, C8 one end respectively, and electric capacity C7, C8's is another
Base stage of the one end respectively with transistor T1, T2 is connected.Varactor CVAR5 and CVAR6 common port connection fine tuning voltage
Input interface, varactor CVAR5 and the CVAR6 other end passes through resistance R5 and R6 connection low level VSS respectively；Fine tuning
Control source interface provides fine tuning voltage Vtune, fine to circuit.
The second fine tuning capacitive branch includes resistance R1, R2, varactor CVAR1, CVAR2 and electric capacity C3, C4,
Resistance R1, R2 are connected with varactor CVAR1, CVAR2 and access electric capacity C3, C4 one end respectively, and electric capacity C3, C4's is another
Emitter stage of the one end respectively with transistor T1, T2 is connected.Varactor CVAR1 and CVAR2 common port equally connects fine tuning
Control source interface, the other end passes through resistance R1 and R2 connection low level VSS respectively；Between described transistor T1, T2 base stage
Also connected by transmission line L1, L2, bias voltage interface is also associated between transmission line L1, L2, receive bias voltage；It is described
Electric capacity C1 is also associated between transistor T1 base stage and emitter stage, electricity is also associated between transistor T2 base stage and emitter stage
Hold C2.
The coarse tuning capacitive branch includes resistance R3, R4, varactor CVAR3, CVAR4 and electric capacity C5, C6, electricity
Resistance R3, R4 are connected with varactor CVAR3, CVAR4 and access electric capacity C5, C6 one end respectively, and electric capacity C5, C6's is another
The emitter stage respectively with transistor T1, T2 is held to be connected.The connection coarse-tuning voltage input of varactor CVAR3, CVAR4 common port
Interface, the other end passes through resistance R3 and R4 connection low level VSS respectively.Because voltage controlled oscillator frequency of oscillation is raised with temperature
And gradually reduce, the VT scope that can be used is reduced, therefore frequency can be compensated by introducing coarse tuning capacitive branch
Rate variation with temperature.When temperature rise, varactor CVAR3 and CVAR4 capacitance reduce；Temperature is reduced, varactor
CVAR3 and CVAR4 capacitances increase, so as to ensure that frequency of oscillation keeps relative stability in whole operating temperature range.In addition, logical
The different bias voltages of coarse-tuning voltage Vtune, coarse setting for receiving the input of coarse-tuning voltage input interface are crossed, can be adjusted
Save the centre frequency of voltage controlled oscillator vibration.
The voltage controlled oscillator of the present embodiment is according to Colpitts bikini oscillators operation principle design as shown in Figure 4
's.According to Colpitts bikini oscillator operation principles, frequency of oscillationWherein L be Fig. 3 in crystal
Transmission line L1, L2 of pipe T1 and T2 base stage connection are formed, input capacitance Cin=Cb+ (CbeCe)/(Cbe+Ce).To obtain
Broad tuning scope, should increase Cbe/Ce ratios and reduce Cb/Ce ratios.Cbe/Ce ratios can by increase transistor T1,
T2 base stages are improved with interelectrode capacity C1, C2 is launched, and the tuning that Cb/Ce ratios can be by increasing emitter is variable
Electric capacity and reduce.But electric capacity C1, C2 continue increase and frequency tuning range can be caused to reach saturation while increasing voltage controlled oscillator
Phase noise；The increase of emitter stage tuning variable capacitance can reduce Cbe/Ce ratios again, reduce overall tuning range.By in crystalline substance
Body pipe T1, T2 base stage add the fine tuning capacitive branch of CVAR5 and CVAR6 compositions, can due to not influenceed by electric capacity C1, C2
To effectively improve voltage controlled oscillator reference frequency output.
Electric capacity C1, C3, C5 one end connection output port Voutp@w, electric capacity C2, C4, C6 one end connection output port
Voutn@w。
Also pass through transmission line L3, L4 formation path, described transmission line L3, L4 between described transistor T1, T2 emitter stage
To be operated in fundamental frequency w, wavelength is the transmission line of λ/4, and transmission line L3, L4 are used in B nodes generation second harmonic 2w, and
High resistance path is formed between transistor T1, T2 emitter stage and B nodes, reduces the loss of resonant network Q values, voltage controlled oscillator is improved and shakes
Amplitude is swung, optimizes phase noise performance.Described transmission line L3, L4 one end are connected to low level by transmission line L11, resistance R7
VSS, described transmission line L3, L4 one end also pass through transmission line L12, electric capacity C11 connection output port Voutn@2w.
The match circuit that transmission line L5, L6, L7, L8, electric capacity C9 are constituted is connected between transistor T1, T2 colelctor electrode.
In above-mentioned match circuit, transmission line L5, L7, L8, L6 are sequentially connected, and electric capacity C9 one end is connected between transmission line L5, L7, electricity
The other end for holding C9 is connected between transmission line L8, L6, and described transistor T1, T2 colelctor electrode connect transmission line L5, L6 respectively
One end, described transmission line L7, L8 common port are also by transmission line L9 connection power supplys VCC, and described transmission line L7, L8 are public
End also passes through transmission line L10, electric capacity C10 connection output port Voutp@2w.
By transmission line L5~L8 and electric capacity C9 match circuit connection transistor T1, T2 constituted colelctor electrode and A nodes,
Second harmonic 2w is produced at A nodes.Be operated in two times of resonant frequency 2w, wavelength for λ/4 transmission line L9 and L11 as gripping
Flowing inductance is used to provide direct current biasing in A, B node.Because resonator transmission line has phase shift, 2 signal phases of A, B can not
180 phase differences are reached, it is necessary to which choosing different length transmission line L10 and L12 carries out phase adjusted, eventually through electric capacity C10 and C11
Export two times of base frequency oscillation signals.
In the present embodiment, w refers to 38GHz~40.5GHz, and 2w refers to 76GHz~81GHz.
Embodiment 3
As shown in figure 5, first buffer and the second buffer all include source follower and cascode polar circuit, use
In reducing influence of the successive load to voltage controlled oscillator performance, while providing enough output signal amplitudes of oscillation, circuit structure such as Fig. 5
It is shown.Input signal Vinp and Vinn are conveyed to transistor T3, T4 base stage through capacitance C12, C13 respectively, transistor T3,
T4 base stages are connected respectively to be connected after R8, R9；Wherein resistance R8, R9 is used to provide bias voltage Vb1.Transistor T3, T4 colelctor electrode
It is connected to power supply VCC.Transistor T3 emitter stages connection resistance R10 one end and transistor T5 base stages, transistor T4 emitter stages connect
Connecting resistance R11 one end and transistor T6 base stages, resistance R10 and the R11 other end are connected to low level VSS.Transistor T5 current collections
Launched by transmission line L13 connection transistor T7 emitter stages, transistor T6 colelctor electrodes by transmission line L14 connection transistors T8 pole
Pole, transistor T5 and T6 emitter stages be connected through transmission line L19 and resistance R12 ground connection, wherein transmission line L13, L14 be used for cascode and
Grounded-base transistor interstage matched, improves gain；Transmission line L19 is used to obtain high impedance current source characteristic, strengthens common mode inhibition energy
Power.The connection of transistor T7 and T8 base stage receives bias voltage Vb2, and transistor T7, T8 colelctor electrode are all respectively λ/4 by wavelength
Transmission line L15, L16 be connected to power supply VCC, transistor T7, T8 colelctor electrode are also connected to through transmission line L17 and L18 slow respectively
Rush device output port Voutn and Voutp.
Embodiment 4
The present embodiment and the difference of embodiment 1 are, further, to improve inside level of integrated system, transmitting chip
Power splitter uses wilkinson power dividers, produces two bars transmitting branches, and structure is as shown in Figure 6.Input is passed with output
Defeated line characteristic impedance is Z0, and input transmission line is respectively by characteristic impedanceWavelength is λ/4 transmission line L20, L21
With two output transmission line connections, transmission line L20, L21 are used to realize impedance transformation.The output port of two output transmission lines
Isolated and matched by resistance R between D, E, R=2Z0.Due to circuit symmetrical, when signal is from the input of input transmission line
Port C is inputted, and equal in magnitude, phase identical two paths of signals, D, E two ends output power signal can be produced in output port D, E
PD=PE=PA-3dB.
Embodiment 5
The present embodiment and the difference of embodiment 1 are that further, millimeter wave frequency band transistor gain is by the very day of one's doom
System, therefore in order to meet trailer-mounted radar using the requirement for transmission power, the first power amplifier of transmitting chip and second
Power amplifier realizes that preceding two-stage uses identical structure by the difference cascode amplifier of three-stage cascade, and preceding two-stage is put
Big device circuit is as shown in fig. 7, voltage Vb1 is connected to transistor T9, T10 base by wavelength for the transmission line L27 and L28 of λ/4
Pole；Input signal Vin is connected to transistor T9 base stages by transmission line L22, L23, L25；Input signal Vin also passes through transmission
Line L22, electric capacity C15, transmission line L26 are connected to transistor T10 base stages.It is low by electric capacity C14 connections between transmission line L23, L25
Level VSS (is attached to ground).It is connected to ground by transmission line L24 between electric capacity C15, transmission line L26.Transistor T9, T10 are sent out
Emitter-base bandgap grading is connected to ground after being connected by transmission line L29, resistance R13.Transistor T9, T10 colelctor electrode respectively by transmission line L30,
L31 is connected to transistor T11, T12 emitter stage, receiving voltage Vb2, transistor T11 after transistor T11, T12 base stage are connected,
T12 colelctor electrodes are connected to power supply VCC by transmission line L32, L33 respectively, and transistor T11, T12 colelctor electrode also leads to respectively
Cross transmission line L35, L34 output signal Voutn, Voutp.
The LC_Balun structures of transmission line L23, L24 and electric capacity C14, C15 composition produce ± 90 degree of phase shifts, by prime work(
The single-ended signal of device output is divided to be converted to differential signal, transmission line L29, L32 and resistance R13 are what transistor T9 and T11 were constituted
Cascode pole branch road provides DC channel, and transmission line L29, L33 and resistance R13 are that the cascode that transistor T12 and T10 are constituted is total to
Base stage branch road provides DC channel, and transmission line L22, L25, L26, L30, L31, L34, L35 are used for interstage matched.
Third level amplifier architecture as shown in figure 8, voltage Vb1 by transmission line L36 and L37 be connected to transistor T13 and
T14 base stages, input signal vinp, vinn is separately input to transistor T13, T14 base stage, and transistor T13, T14 emitter stage passes through
Transmission line L38, resistance R14 are grounded.Transistor T13 colelctor electrodes are connected to power supply VCC, transistor T14 by transmission line L39, L41
Colelctor electrode is connected to power supply VCC by transmission line L40, L42.Transistor T13 colelctor electrodes also by transmission line L39, electric capacity C16,
Transmission line L43 is connected to transistor T15 emitter stages；Transistor T14 colelctor electrodes also pass through transmission line L40, electric capacity C17, transmission line
L44 is connected to transistor T16 emitter stages.Transistor T15, T16 emitter stage respectively by transmission line L46, L47 connect after through pass
Defeated line L45, resistance R15 are connected to ground.Transistor T15 colelctor electrodes are connected to power supply VCC, transistor by transmission line L48, L50
T16 colelctor electrodes are connected to power supply VCC by transmission line L49, L51.Output signal voutp, voutn respectively by transistor T15,
T16 colelctor electrodes are exported by transmission line L48, L49.Transistor T15, T16 base stage connection voltage Vb2.
Transistor T13 and T14 and grounded-base transistor T15 and T16 are by electric capacity C16 and C17 AC coupled for cascode level,
Individually it is biased by voltage Vb1 and Vb2 respectively.Transistor T15 can be caused using the cascode polar circuit of AC coupled
More voltage spaces are obtained with T16 colelctor electrodes, so as to be conducive to improving power amplifier output power.
Embodiment 6
The present embodiment and the difference of embodiment 1 are that further, 16 frequency dividers are based on Miller and dynamically remove two divided-frequency
Device structure cascade realize, as shown in figure 9, including radio frequency input to transistor, switch to transistor, difference amplifier and source with
With device.Transistor T17, T18 formation radio frequency input to transistor, transistor T17, T18 base stage connect respectively input signal Vinp,
Vinn, voltage Vb are connected to transistor T17, T18 base stage through resistance R16 and R17, and base bias is provided for transistor T17, T18
Voltage, transistor T17, T18 emitter stage is connected to ground through resistance R18.Transistor T17 is connected to voltage through transmission line L54, L52
VCC.Transistor T18 is connected to voltage VCC through transmission line L55, L53.
Transistor T19, T20, T21, T22 composition switch are to transistor, and transistor T19, T20 emitter stage are connected and by passing
Defeated line L60, L62, resistance R19 are connected to ground；Transistor T21, T22 emitter stage are connected and pass through transmission line L61, L63, resistance
R19 is connected to ground.Resistance R19 provides the switch to electric current needed for transistor legs.Transistor T19 is connected with T22 colelctor electrodes, brilliant
Body pipe T19, T22 base stage connects opposite in phase input signal Voutn, Voutp respectively；Transistor T20, T21 colelctor electrode are connected, brilliant
Body pipe T20, T21 base stage equally connect input signal Voutp, Voutn of opposite in phase respectively.Transistor T21, T22 emitter stage
It is connected and transistor T17 colelctor electrodes is connected to by transmission line L61, L58, electric capacity C18, transmission line L56, L54.Transistor T19,
T20 emitter stages are connected and are connected to transistor T18 colelctor electrodes by transmission line L60, L59, electric capacity C19, transmission line L57, L55.
Difference amplifier includes transistor T23, T24, and transistor T23, T24 emitter stage are connected and connected by resistance R24
To ground, resistance R20 is connected between transistor T23 base stages, colelctor electrode, resistance is connected between transistor T24 base stages, colelctor electrode
R21, transistor T23, T24 colelctor electrode are connected to power supply VCC by resistance R22, R23 respectively.Transistor T23 base stages connect respectively
Transistor T19, T22 colelctor electrode is connected to, transistor T24 base stages are connected to transistor T20, T21 colelctor electrode.
Switch is to transistor output signal by being put by resistance R20~R24 and transistor T23 and the T24 difference constituted
Big device is amplified, while filtering out the noise signal produced after mixing using the finite gain-bandwidth of amplifier itself, reservation is removed
Two divided-frequency frequency content.
Transistor T25, T26, T27, T28 constitute source follower, and transistor T25, T26, T27, T28 emitter stage leads to respectively
Cross resistance R25, R26, R27, R28 and be connected to ground.Transistor T25, T26, T27, T28 colelctor electrode is connected to power supply VCC.T25、
T26 base stages are connected to power supply VCC by resistance R23, R22 respectively.Transistor T27, T28 emitter stage connects opposite in phase respectively
Output signal port.
Transistor T25~T28 is changed DC level as source follower, while preferably driving successive load.
Wherein transistor T25 emitter stages connect transistor T27 base stages, transistor T27 emitter stages feedback link to transistor T19 and T21
Base stage；Transistor T26 emitter stages connect transistor T28 base stages, transistor T28 emitter stages feedback link to transistor T20 with
T22 base stages, resistance R25~R28 connects with transistor T25~T28 respectively, DC channel is produced, except two divided-frequency signal finally leads to
Cross port Voutp and Voutn output.Transmission line L52, L53, L62, L63, there is provided direct current biasing, reduce letter as choke induction
Number loss；Transmission line L54~L61 is used for radio frequency input pair and switching transistor to interstage matched, improves voltage at working band
Gain, electric capacity C18, C19 are used to exchange blocking.
It is described above, only it is preferred embodiment of the present utility model, any formal limit is not done to the utility model
System, every any simple modification made according to technical spirit of the present utility model to above example, equivalent variations are each fallen within
Within protection domain of the present utility model.
Claims (9)
1. a kind of transmitting chip for millimeter wave Vehicular radar system, it is characterised in that including voltage controlled oscillator (1) and with pressure
Controlled oscillator (1) connection, fine tuning control source interface (13) for controlling to provide fundamental frequency and two frequency multiplication two paths of signals and
Coarse-tuning voltage input interface (14), the voltage controlled oscillator (1) is also connected with the first buffer (2), the 3rd power in turn and put
Big device (3), the first balun (4), first balun (4) are also associated with local oscillation signal output port (15)；First buffering
Device (2) is also associated with frequency divider, and frequency divider is also associated with RF signal output mouthful (16), the voltage controlled oscillator (1) also according to
Secondary to be connected with the second buffer (6), the second balun (7), power splitter (8), the power splitter (8) has been also respectively connected with the first power
Amplifier (10) and the second power amplifier (9), first power amplifier (10), the second power amplifier (9) respectively and
First signal emission port (17), secondary signal emission port connection (18).
2. a kind of transmitting chip for millimeter wave Vehicular radar system according to claim 1, it is characterised in that described
Frequency divider is 16 frequency dividers (5).
3. a kind of transmitting chip for millimeter wave Vehicular radar system according to claim 1, it is characterised in that first
Power amplifier (10) and the second power amplifier (9) are all multi-stage cascade power amplifier, first power amplifier
(10) it is identical with the second power amplifier (9) structure, the difference cascode amplifier all including three-stage cascade.
4. a kind of transmitting chip for millimeter wave Vehicular radar system according to claim 1, it is characterised in that described
Voltage controlled oscillator (1) includes being connected with the first fine tuning capacitive branch between transistor T1, T2, transistor T1, T2 base stage, brilliant
The second fine tuning capacitive branch and coarse tuning capacitive branch are connected between body pipe T1, T2 emitter stage；Second fine tuning electric capacity branch
The two ends on road are connected with the two ends of coarse tuning capacitive branch respectively.
5. a kind of transmitting chip for millimeter wave Vehicular radar system according to claim 4, it is characterised in that described
First fine tuning capacitive branch includes resistance R5, R6, varactor CVAR5, CVAR6 and electric capacity C7, C8；R5, R6 points of resistance
Be not connected with varactor CVAR5 and CVAR6 and access electric capacity C7, C8 one end, electric capacity C7, C8 other end respectively with crystalline substance
Body pipe T1, T2 base stage connection；Varactor CVAR5 and CVAR6 common port connection fine tuning control source interface (13),
Varactor CVAR5 and the CVAR6 other end pass through resistance R5 and R6 connection low level VSS respectively；Fine tuning control source connects
Mouth (13) gives circuit to provide fine tuning voltage；
The second fine tuning capacitive branch includes resistance R1, R2, varactor CVAR1, CVAR2 and electric capacity C3, C4, resistance
R1, R2 are connected with varactor CVAR1, CVAR2 and access electric capacity C3, C4 one end respectively, electric capacity C3, C4 other end point
Emitter stage not with transistor T1, T2 is connected；It is defeated that varactor CVAR1 and CVAR2 common port equally connect fine tuning voltage
Incoming interface (13), the other end passes through resistance R1 and R2 connection low level VSS respectively；Between described transistor T1, T2 base stage also
Connected by transmission line L1, L2, bias voltage interface is also associated between transmission line L1, L2, receive bias voltage；The crystal
Electric capacity C1 is also associated between pipe T1 base stage and emitter stage, electric capacity is also associated between transistor T2 base stage and emitter stage
C2；
The coarse tuning capacitive branch includes resistance R3, R4, varactor CVAR3, CVAR4 and electric capacity C5, C6, resistance R3,
R4 is connected with varactor CVAR3, CVAR4 and accesses electric capacity C5, C6 one end respectively, electric capacity C5, C6 other end difference
It is connected with transistor T1, T2 emitter stage；Varactor CVAR3, CVAR4 common port connect coarse-tuning voltage input interface
(14), the other end passes through resistance R3 and R4 connection low level VSS respectively；
Also pass through transmission line L3, L4 formation path, the one of described transmission line L3, L4 between described transistor T1, T2 emitter stage
End is connected between low level VSS, transistor T1, T2 colelctor electrode by transmission line L11, resistance R7 is connected with what is be sequentially connected
Transmission line L5, L7, L8, L6, electric capacity C9 one end are connected between transmission line L5, L7, and the electric capacity C9 other end is connected to transmission
Between line L8, L6, described transistor T1, T2 colelctor electrode connect transmission line L5, L6 one end, described transmission line L7, L8 respectively
Common port also pass through transmission line L9 connection power supplys VCC.
6. a kind of transmitting chip for millimeter wave Vehicular radar system according to claim 1, it is characterised in that described
First buffer (2) is identical with the second buffer (6) structure, and first buffer (2) includes transistor T3, T4, input letter
Number transistor T3, T4 base stage is conveyed to through capacitance C12, C13 respectively, transistor T3, T4 base stage connect phase after R8, R9 respectively
Even；Transistor T3, T4 colelctor electrode is connected to power supply VCC；Transistor T3 emitter stages connection resistance R10 one end and transistor T5 bases
Pole, transistor T4 emitter stages connection resistance R11 one end and transistor T6 base stages, resistance R10 and the R11 other end are connected to low electricity
Flat VSS；Transistor T5 colelctor electrodes pass through transmission line by transmission line L13 connection transistor T7 emitter stages, transistor T6 colelctor electrodes
L14 connection transistor T8 emitter stages, transistor T5, T6 emitter stage are connected to be grounded through transmission line L19 and resistance R12, transistor T7
Bias voltage is received with the connection of T8 base stages, transistor T7, T8 colelctor electrode are connected to power supply VCC by transmission line L15, L16 respectively,
Transistor T7, T8 colelctor electrode are also connected to buffer output end mouthful through transmission line L17 and L18 respectively.
7. a kind of transmitting chip for millimeter wave Vehicular radar system according to claim 3, it is characterised in that transmitting
The structure of two-stage differential cascode amplifier is identical before the first power amplifier (10) of chip, including transistor T9, T10,
Bias voltage is connected to transistor T9, T10 base stage by transmission line L27 and L28；Input signal by transmission line L22, L23,
L25 is transferred to transistor T9 base stages；Input signal is also connected to transistor by transmission line L22, electric capacity C15, transmission line L26
T10 base stages；It is connected to ground by electric capacity C14 between transmission line L23, L25；Pass through transmission line between electric capacity C15, transmission line L26
L24 is connected to ground；Transistor T9, T10 emitter stage are connected to ground after being connected by transmission line L29, resistance R13；Transistor T9,
T10 colelctor electrodes are connected to transistor T11, T12 emitter stage by transmission line L30, L31 respectively, and transistor T11, T12 base stage are connected
After receive bias voltage, transistor T11, T12 colelctor electrode are connected to power supply VCC, the crystal by transmission line L32, L33 respectively
Pipe T11, T12 colelctor electrode also pass through transmission line L35, L34 output signal respectively.
8. a kind of transmitting chip for millimeter wave Vehicular radar system according to claim 3, it is characterised in that the 3rd
Level difference cascode amplifier includes transistor T13, T14, and bias voltage is connected to transistor by transmission line L36, L37
T13 and T14 base stages, input signal is separately input to transistor T13, T14 base stage, and transistor T13, T14 emitter stage pass through transmission
Line L38, resistance R14 are grounded；Transistor T13 colelctor electrodes are connected to power supply VCC, transistor T14 current collections by transmission line L39, L41
Pole is connected to power supply VCC by transmission line L40, L42；Transistor T13 colelctor electrodes also pass through transmission line L39, electric capacity C16, transmission
Line L43 is connected to transistor T15 emitter stages；Transistor T14 colelctor electrodes are also connected by transmission line L40, electric capacity C17, transmission line L44
It is connected to transistor T16 emitter stages；Transistor T15, T16 emitter stage respectively by transmission line L46, L47 connect after through transmission line
L45, resistance R15 are connected to ground；Transistor T15 colelctor electrodes are connected to power supply VCC, transistor T16 collection by transmission line L48, L50
Electrode is connected to power supply VCC by transmission line L49, L51；Output signal passes through transmission by transistor T15, T16 colelctor electrode respectively
Line L48, L49 are exported；The connection of transistor T15, T16 base stage receives bias voltage.
9. a kind of transmitting chip for millimeter wave Vehicular radar system according to claim 2, it is characterised in that described
The two-divider that 16 frequency dividers (5) are cascaded by level Four is constituted, and every grade of two-divider includes radio frequency and inputted to transistor, switch pair
Transistor, difference amplifier and source follower；Transistor T17, T18 formation radio frequency input are to transistor, transistor T17, T18
Base stage connects reception input signal respectively, and bias voltage is connected to transistor T17, T18 base stage, transistor through resistance R16 and R17
T17, T18 emitter stage are connected to ground through resistance R18；Transistor T17 colelctor electrodes are connected to voltage VCC through transmission line L54, L52；It is brilliant
Body pipe T18 colelctor electrodes are connected to voltage VCC through transmission line L55, L53；
Transistor T19, T20, T21, T22 composition switch are to transistor, and transistor T19, T20 emitter stage are connected and pass through transmission line
L60, L62, resistance R19 are connected to ground；Transistor T21, T22 emitter stage are connected and connected by transmission line L61, L63, resistance R19
It is connected to ground；Transistor T19 is connected with T22 colelctor electrodes, and transistor T19, T22 base stage connect opposite in phase input signal respectively；It is brilliant
Body pipe T20, T21 colelctor electrode are connected, and transistor T20, T21 base stage equally connect the input signal of opposite in phase respectively；Transistor
T21, T22 emitter stage are connected and are connected to transistor T17 current collections by transmission line L61, L58, electric capacity C18, transmission line L56, L54
Pole；Transistor T19, T20 emitter stage are connected and are connected to crystal by transmission line L60, L59, electric capacity C19, transmission line L57, L55
Pipe T18 colelctor electrodes；
Difference amplifier includes transistor T23, T24, and transistor T23, T24 emitter stage are connected and are connected to ground by resistance R24,
Resistance R20 is connected between transistor T23 base stages, colelctor electrode, resistance R21 is connected between transistor T24 base stages, colelctor electrode,
Transistor T23, T24 colelctor electrode are connected to power supply VCC by resistance R22, R23 respectively；Transistor T23 base stages are connected to crystalline substance
Body pipe T19, T22 colelctor electrode, transistor T24 base stages are connected to transistor T20, T21 colelctor electrode；
Transistor T25, T26, T27, T28 constitute source follower, and transistor T25, T26, T27, T28 emitter stage passes through resistance respectively
R25, R26, R27, R28 are connected to ground；Transistor T25, T26, T27, T28 colelctor electrode is connected to power supply VCC；T25, T26 base stage
Power supply VCC is connected to by resistance R23, R22 respectively；Transistor T27, T28 emitter stage connect opposite in phase output signal respectively
Port；Transistor T25 emitter stages connect transistor T27 base stages, transistor T27 emitter stages feedback link to transistor T19 and T21
Base stage；Transistor T26 emitter stages connect transistor T28 base stages, transistor T28 emitter stages feedback link to transistor T20 and T22
Base stage.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720025384.1U CN206541020U (en) | 2017-01-10 | 2017-01-10 | A kind of transmitting chip for millimeter wave Vehicular radar system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107015204A (en) * | 2017-01-10 | 2017-08-04 | 成都旋极星源信息技术有限公司 | A kind of transmitting chip for millimeter wave Vehicular radar system |
| CN109116779A (en) * | 2018-08-27 | 2019-01-01 | 苏州矽典微智能科技有限公司 | A kind of automatic switch controller and method of electrical equipment |
| CN116260395A (en) * | 2023-05-15 | 2023-06-13 | 深圳芯盛思技术有限公司 | Ultra-wideband voltage-controlled oscillator circuit based on Colpitts structure |
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2017
- 2017-01-10 CN CN201720025384.1U patent/CN206541020U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107015204A (en) * | 2017-01-10 | 2017-08-04 | 成都旋极星源信息技术有限公司 | A kind of transmitting chip for millimeter wave Vehicular radar system |
| CN107015204B (en) * | 2017-01-10 | 2023-05-16 | 成都旋极星源信息技术有限公司 | Transmitting chip for millimeter wave vehicle-mounted radar system |
| CN109116779A (en) * | 2018-08-27 | 2019-01-01 | 苏州矽典微智能科技有限公司 | A kind of automatic switch controller and method of electrical equipment |
| CN116260395A (en) * | 2023-05-15 | 2023-06-13 | 深圳芯盛思技术有限公司 | Ultra-wideband voltage-controlled oscillator circuit based on Colpitts structure |
| CN116260395B (en) * | 2023-05-15 | 2023-08-04 | 深圳芯盛思技术有限公司 | Ultra-wideband voltage-controlled oscillator circuit based on Colpitts structure |
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