CN206378587U - A kind of reception chip for 77GHz car radars - Google Patents
A kind of reception chip for 77GHz car radars Download PDFInfo
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- CN206378587U CN206378587U CN201720025106.6U CN201720025106U CN206378587U CN 206378587 U CN206378587 U CN 206378587U CN 201720025106 U CN201720025106 U CN 201720025106U CN 206378587 U CN206378587 U CN 206378587U
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Abstract
The utility model discloses a kind of reception chip for 77GHz car radars, rf signal reception module, local oscillation signal times frequency module, work(sub-module and IF signal processing module including 4 passages, the local oscillation signal times frequency module, which is received after local oscillation signal frequency multiplication, is divided into that four tunnels are delivered to 4 passages of rf signal reception module and the radiofrequency signal that is received with rf signal reception module carries out down-converted and is changed into intermediate-freuqncy signal from work(sub-module, then is conveyed to after IF signal processing resume module and is exported.
Description
Technical field
The utility model is related to the fields such as radio frequency/millimeter wave chip design art, vehicle radar system front-end circuit, specifically
Say, be a kind of reception chip for 77GHz car radars.
Background technology
With the explosive growth of automobile quantity, running safety is by increasing challenge, and passive security is as pacified
Full band, air bag etc. have been not sufficient to ensure that the person and property safety.Therefore, active safety feature is gradually applied to vapour
Garage's industry.Wherein, the application of Automobile Millimeter Wave Radar is that adaptive cruise, anticollision, blind area detection etc. provide reliable master
Dynamic safety measure.Typical automobile-used millimetre-wave radar frequency is to apply detection range under 24GHz and 77GHz, 77GHz wave band long,
With roomy, frequency range relative usage is less, and vehicle-mounted millimeter wave length has gradually been developed into away from radar application wave band.
Radar system is broadly divided into CW with frequency modulation（FMCW）Radar and pulse radar.For car radar application, mesh
Subject distance is nearer, and transmitting pulse and the time difference received between pulse are very small, and signal high speed processing requires higher.Frequency modulation is continuous
Ripple algorithm is simple, and signal processing requirement is not high, is especially suitable for doing the car radar of proximity detection.
Fmcw radar launch continuous modulation signal, signal frequency in the time domain according to modulation voltage rule linear rise or
Person declines, and conventional modulated signal includes square-wave signal, sawtooth signal and triangular signal etc..To use triangular modulation
Exemplified by the fmcw radar ranging of form, FM signal centre frequency is fo, and Tc is that FM signal cycle, Bc are modulating bandwidth.Letter
Number uphill process, transmission signal is expressed as fbup with receiving the beat frequency of signal；Signal be in decline process, transmission signal with
The beat frequency for receiving signal is expressed as fbdn.When target remains static, transmission signal postpones by thunder by Δ T time
The distance between up to reception, Δ T=2R/c, c is the light velocity in formula, and R is radar with target.Now raising and lowering process difference frequency frequency
The distance between rate fbup=fbdn=fr1=f1-f2, radar and target object R=c Tc fr1/4Bc.If target is moved
Dynamic, then reflected signal includes one as the Doppler frequency shift fd caused by target relative movement.Fd=2Vr fo/c, Vr are relative
Movement velocity, Doppler frequency shift can cause difference frequency signal to produce change, wherein signal uphill process in raising and lowering process
Difference frequency signal fbup=fr2-fd, signal decline process difference frequency signal fbdn=fr2+fd, therefore can calculate radar with
Target relative velocity Vr=c（fbdn-fbup）/ 4fo, when target close to radar when, relative velocity value is just, and target is remote
During from radar, value is negative.Based on apart from R and relative velocity Vr formula, may further determine that radar system processing distance and
Relative velocity resolution ratio.
The detection of target is main to be determined by radar emission and the wave beam received.Pass through integrated multiple antennas, multiple transmitting-receivings
The digital beam froming system that passage and Digital Signal Processing are realized, can complete the processing of multiple signals, broadening radar prison
The angle of survey.Radio frequency receiving and transmitting front end is the nucleus module of radar system.The VCO that transmission signal is internally integrated by emitter
Device is produced in the presence of modulated signal, and its output signal is a part of to amplify output by power amplifier, and a part is used as and connect
The echo-signal that receipts machine local oscillation signal reflects with target is mixed.
Existing vehicle-mounted millimeter wave radar receives chip and is divided into two kinds.A kind of form of use discrete device, by independent
Balun, frequency mixer, amplifier, frequency multiplier and power amplifier chip realize the demodulation of reflected signal, program integrated level
Demand that is relatively low, being unfavorable for car radar miniaturization.Another scheme uses fully integrated form, and all functional units are in core
Realized inside piece.
Radio-frequency transmitter in existing 77GHz Automobile Millimeter Wave Radars system realized using many money chip portfolios mostly,
There is volume big, power consumption is big, and uniformity is poor, the shortcomings of cost is higher, and the increase of number of chips means that design difficulty will increase
Plus, cause the increase of development cost and the lengthening of R＆D cycle, be unfavorable for large-scale application.
Utility model content
In order to improve the integrated level and performance of vehicle radar system, it is used for 77GHz automobile thunders the utility model proposes one kind
Up to chip is received, SiGe BiCMOS techniques and transmission line technology are taken full advantage of, 77GHz millimetre-wave radar receivers are realized
Single-chip integration, and sufficiently consider the linearity, noise, gain indices in circuit design, employ novelty
Circuit design technique, realizes the lifting of each system index.
A kind of reception chip for 77GHz car radars, includes rf signal reception module, the local oscillation signal of 4 passages
Times frequency module, work(sub-module and IF signal processing module, the local oscillation signal times frequency module receive after local oscillation signal frequency multiplication by
Work(sub-module be divided into four tunnels be delivered to rf signal reception module 4 passages and with penetrating that rf signal reception module is received
Frequency signal carries out down-converted and is changed into intermediate-freuqncy signal, then is conveyed to output after IF signal processing resume module.
Specifically, the local oscillation signal times frequency module includes local oscillation signal input interface, local oscillation signal input interface successively
The first balun, the first buffer amplifier, frequency multiplier, power amplifier and the second balun of connection, the second balun connection work(point mould
Block.
Specifically, the rf signal reception module is delayed including the 3rd balun, low-noise mixer, the 4th balun, second
Amplifier, the 3rd buffer amplifier and rf input interface are rushed, the rf input interface is connected with the 3rd balun, low noise in turn
Sound frequency mixer, the 3rd buffer amplifier, the low-noise mixer are also connected with the second buffer amplifier, the 4th balun in turn,
The 4th balun connection work(sub-module.
Specifically, work(sub-module is wilkinson power splitters.
Specifically, the IF signal processing module include intermediate-freuqncy signal output interface and with intermediate-freuqncy signal output interface according to
5th buffer amplifier of secondary connection and the 4th buffer amplifier, the 4th buffer amplifier are connected with rf signal reception module.
Specifically, the 3rd buffer amplifier is emitter follower.
Specifically, the 5th buffer amplifier is in the differential emitter follower of regulation and the driving of amplitude, described the
Four buffer amplifiers are first-level buffer amplifier.
Specifically, the low-noise mixer includes transistor T1, T2, and transistor T1, T2 base stage connection differential signal are defeated
Enter end；Transistor T1, T2 base stage also receives bias voltage by transmission line TL7, TL6 respectively；Transistor T1, T2 emitting stage
It is sequentially connected after transmission line TL5, resistance R1 and is grounded after being connected；Transistor T1 colelctor electrodes pass sequentially through transmission line TL12, TL10 company
Power supply is connected to, transistor T2 colelctor electrodes pass sequentially through transmission line TL13, TL11 and are connected to power supply；Transistor T3, T4 emitter stage phase
After even and it is connected to ground by transmission line TL17, TL16, resistance R2；Transistor T5, T6 emitter stage are connected rear and pass through transmission line
TL18, TL16, resistance R2 are connected to ground；Transistor T3, T6 base stage is connected to local oscillation signal input, transistor after being connected
T4, T5 base stage are connected to local oscillation signal input after being connected；It is defeated that transistor T3, T5 colelctor electrode are connected to intermediate-freuqncy signal after being connected
Exit port, T4, T6 colelctor electrode is connected to intermediate-freuqncy signal output port after being connected；Transistor T3, T5 colelctor electrode by the first RC simultaneously
Connection circuit is connected to power supply, and transistor T4, T6 colelctor electrode are connected to power supply by the 2nd RC parallel circuits.First RC is in parallel
Circuit includes resistance R3, electric capacity C5；The 2nd RC parallel circuits include resistance R4, electric capacity C6；Transistor T3, T4 emitter stage phase
Transmission line TL14, capacitance C3, transmission line TL12, which are passed sequentially through, after even is connected to transistor T1 colelctor electrodes；Transistor T5, T6
Transmission line TL15, capacitance C4, transmission line TL13, which are passed sequentially through, after being connected is connected to transistor T2 colelctor electrodes.
Specifically, frequency multiplier includes transistor T7, T8, transistor T7, T8 base stage connection local oscillation signal input；Transistor
T7, T8 base stage also receive bias voltage by transmission line TL21, TL20 respectively；Transistor T7, T8 emitter stage are connected and by passing
Defeated line TL19, resistance R5 are connected to ground；Transistor T7, T8 colelctor electrode is connected with resonant load circuit, and resonant load circuit includes
Transmission line TL22, TL24, TL25, TL23 and electric capacity Cc, transmission line TL22, TL24, TL25, TL23 are sequentially connected, electric capacity Cc's
One end is connected between transmission line TL22 and TL24, and the other end is connected between transmission line TL23, TL25；Transmission line TL22,
TL23 is connected with transistor T7, T8 colelctor electrode respectively；Transmission line TL6, TL7 common port are connected to electricity by transmission line TL26
Source；Transistor T9, T10 emitter stage pass through transmission line TL32, resistance R6 connections again after being connected respectively by transmission line TL33, TL34
To ground；Transistor T9 colelctor electrodes are connected to power supply by transmission line TL35, TL37；Transistor T10 colelctor electrodes pass through transmission line
TL36, TL38 are connected to power supply；Transistor T9, T10 colelctor electrode are also connected to local oscillation signal by transmission line TL35, TL36 respectively
Output port, exports the local oscillation signal Jing Guo frequency multiplication；Transistor T9, T10 base stage receive bias voltage after being connected；Transmission line
TL27, TL29, TL30 are sequentially connected, and transmission line TL29 two ends are connected to transmission line TL28, TL31 one end, transmission line
TL28, TL31 other end are connected respectively to transistor T9, T10 emitter stage；Transmission line TL30 one end be connected to transistor T7,
Common port between T8 emitter stages.Transmission line TL27 one end is connected to the resonant load being connected with transistor T7, T8 colelctor electrode
Transmission line TL24, TL25 common port in circuit.
Specifically, power amplifier includes transistor T11, T12, the connection local oscillation signal input of transistor T11, T12 base stage
End, receives 78.5GHz local oscillation signal；Transistor T11, T12 base stage also receive biased electrical by transmission line TL41, TL40 respectively
Pressure；Transistor T11, T12 emitter stage are connected to ground after being connected by transmission line TL39, resistance R7；Transistor T11 colelctor electrodes pass through
Transmission line TL42, TL44 are connected to power supply；Transistor T12 colelctor electrodes are connected to power supply by transmission line TL43, TL45；Transistor
T13, T14 are connected to ground by transmission line TL48, resistance R8 again after being connected respectively by transmission line TL49, TL50；Transistor
T13, T14 base stage are connected and receive bias voltage；Transistor T13 colelctor electrodes are connected to power supply by transmission line TL51, TL53；It is brilliant
Body pipe T14 colelctor electrodes are connected to power supply by transmission line TL52, TL54；Transistor T13, T14 also respectively by transmission line TL51,
TL52 exports the local oscillation signal Jing Guo power amplification；Transistor T11 colelctor electrodes are connected to transistor with transmission line TL42, TL46 is crossed
T13 emitter stages；Transistor T12 colelctor electrodes are connected to transistor T14 emitter stages with transmission line TL43, TL47 is crossed.
The utility model compared with prior art, with advantages below and beneficial effect：
（1）While structure of the present utility model make it that the reception system of car radar has high integration, the linearity, make an uproar
Sound, gain indices are also improved.
（2）Structure of the present utility model causes small volume, and small power consumption, uniformity is good, advantage of lower cost.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the circuit theory diagrams of embodiment 2.
Fig. 3 is the circuit theory diagrams of embodiment 3.
Fig. 4 is the circuit theory diagrams of embodiment 4.
Fig. 5 is the circuit theory diagrams of embodiment 5.
Fig. 6 is the circuit theory diagrams of embodiment 6.
Wherein, reference is as follows：1- local oscillation signal times frequency modules, 11- local oscillation signal input interfaces, the baluns of 12- first,
The buffer amplifiers of 13- first, 14- frequency multipliers, 15- power amplifiers, the baluns of 16- second, 2- rf signal reception modules, 21-
Rf input interface, the baluns of 22- the 3rd, 23- low-noise mixers, the baluns of 24- the 4th, the buffer amplifiers of 25- second, 26-
Three buffer amplifiers, 3- work(sub-modules, 4- IF signal processing modules, the buffer amplifiers of 41- the 4th, the Hyblid Buffer Amplifiers of 42- the 5th
Device, 43- intermediate-freuqncy signal output interfaces.
Embodiment
The utility model is described in further detail with reference to embodiment, but embodiment of the present utility model is not
It is limited to this.
Embodiment 1
As shown in figure 1, a kind of reception chip for 77GHz car radars, including rf signal reception module 2, local oscillator
Signal frequency multiplication module 1, work(sub-module 3 and IF signal processing module 4.The rf signal reception module is the radio frequency of 4 passages
Signal receiving block.The local oscillation signal times frequency module, which receives local oscillation signal and carries out being sent to work(sub-module after frequency multiplication, is divided into four tunnels
Identical local oscillation signal, four road local oscillation signal input radio frequency signal receiving modules are simultaneously changed into radiofrequency signal progress down-converted
Baseband processing module outside to chip is exported by IF signal processing module after intermediate-freuqncy signal and carries out AD sampling generation numeral letters
After number, then carry out Digital Signal Processing.The receive-transmit system of car radar provides 38.25GHz signals and gives local oscillation signal times frequency module
Carry out the local oscillation signal that frequency multiplication generates 77.5GHz.
Local oscillation signal times frequency module include that local oscillation signal input interface 11 and local oscillation signal input interface be sequentially connected the
One balun 12, the first buffer amplifier 13, frequency multiplier 14, the balun 16 of power amplifier 15 and second.Local oscillation signal input interface
The 38.25GHz local oscillation signals that car radar receive-transmit system is provided are received, above-mentioned 38.25GHz local oscillation signals are converted through the first balun
Frequency multiplication is carried out to be transferred to frequency multiplier after differential signal after the first buffer amplifier impedance matching, 77.5GHz local oscillator is produced
Signal, power amplifier carries out 77.5GHz local oscillation signal after power amplification, then is sent to work(point mould by the second balun
Block.
The work(sub-module is wilkinson power splitters, and wilkinson power splitters carry out four tunnel power distributions, driven respectively
The low-noise mixer of dynamic 4 road radio frequency reception channels.
Rf signal reception module 2 use single-conversion structure, including the 3rd balun, low-noise mixer, the 4th balun,
Second buffer amplifier, the 3rd buffer amplifier and rf input interface 21, the rf input interface are connected with the 3rd in turn
Balun 22, low-noise mixer 23, the 3rd buffer amplifier, the low-noise mixer are also connected with the second Hyblid Buffer Amplifier in turn
Device, the 4th balun 24, the 4th balun connection work(sub-module.It is divided into the local oscillation signal on four tunnels by the 4th by work(sub-module
Balun and the second buffer amplifier 25 input low-noise mixer.3rd buffer amplifier 26 is used to carry out intermediate-freuqncy signal
Hyblid Buffer Amplifier, the 3rd buffer amplifier is emitter follower.Radiofrequency signal enters in receives link, first by the 3rd balun
Single-ended signal is changed into both-end differential signal to facilitate late-class circuit to handle, is changed into the radiofrequency signal of difference through the 3rd balun
Subsequently enter low-noise mixer and local oscillation signal carries out down-converted.
The IF signal processing module includes intermediate-freuqncy signal output interface 43 and intermediate-freuqncy signal output interface is sequentially connected
The 5th buffer amplifier 42 and the 4th buffer amplifier 41.5th buffer amplifier is differential emitter follower, described
4th buffer amplifier is first-level buffer amplifier.Differential emitter follower is used for the regulation and driving of amplitude.
Receive chip function be by the radiofrequency signal received on antenna by down-converted be transformed into it is relatively low in
Frequent rate, is then sent through baseband processing module after intermediate frequency amplifier amplification, the modulus of signal is completed by baseband processing module
The processing such as conversion and Digital Down Convert.Receive chip and use single-conversion structure, while integrated 4 receiving channels.Local oscillation signal
38.25GHz local oscillation signals are carried out frequency multiplication and enhanced processing by times frequency module generation circuit, and frequency is increased into 77GHz, output work
Rate 6dBm.The later local oscillation signal of frequency multiplication is converted to four tunnels by work(sub-module using Wilkinson types power divider accordingly to be believed
4 receiving channels, overall insertion loss 12dB are inputted number respectively.What the receives link input of rf signal reception module was used
3rd balun, the 4th balun are all LC baluns, and radio-frequency input signals and local oscillation signal are converted into double-end signal, wherein LC baluns
Insertion loss is 1.3dB.Threeth buffer amplifier of the local oscillation signal Jing Guo two-stage cascode structure, the first order puts signal
Greatly, second level clipping signal amplitudes.During radiofrequency signal and local oscillation signal are down-converted to by the active low-noise mixer of double flat weighing apparatus
Frequently, exported by emitter follower to improve driving force, while compatible late-class circuit incoming level.LC baluns, low noise are mixed
Frequency device and emitter follower provide 18dB gains altogether.More due to receiving integrated chip channel number, intermediate-freuqncy signal cabling is very long,
In order to reduce PAD circuit quantities, IF output signal is amplified processing eventually through IF signal processing module, and there is provided 6dB
Gain, then outside differential emitter follower double rotary single circuit Single-end output to chip slapper.
The local oscillation signal phase received for each receiving channel of holding is consistent, and all low-noise mixers press same side
To being laid out, local oscillation signal distributed network signal lead length, turning number and power distributing circuit matched, cabling is not
Unanimously it is introduced into extra electric capacity and produces phase shift.
Automobile Millimeter Wave Radar system docking is received the machine linearity and had higher requirements, while gain with temperature excursion will
It is small, therefore receiving channel does not use low-noise amplifier.Whole receiving channel gain is 24dB, is limited to the 3rd Hyblid Buffer Amplifier
Device wave distortion, receiving channel input 1dB compression points are -8dBm.100k single-side-band noise figures are 13dB.
Embodiment 2
The present embodiment and the difference of embodiment 1 are, further, the 3rd balun of balun are inputted by two-way as radio frequency
T-shaped circuit composition, is the T-shaped circuit of difference anode and the T-shaped circuit of difference negative terminal respectively.Constituted per road by transmission line and electric capacity.
The T-shaped circuit of difference anode includes transmission line TL1, the TL2 connected with input IN, passes through electric capacity C1 between transmission line TL1, TL2
It is connected to ground.The T-shaped circuit of difference negative terminal includes electric capacity C2, the transmission line TL4 connected with input IN, electric capacity C2 and transmission line
It is connected to ground by transmission line TL3 between TL4.Described transmission line TL2, TL4 one end be connected to positive output end OUTP and
Negative output terminal OUTN.Positive output end OUTP has carried out positive 90 degree of phase shifts to radiofrequency signal, and negative output terminal OUTP enters to radiofrequency signal
The minus 90 degree of phase shifts of row, thus obtain differing the differential signal of 180 degree.
Embodiment 3
The present embodiment and the difference of embodiment 1 are that further, low-noise mixer is using double flat weighing apparatus Gilbert knots
A kind of deformation of structure, in the double flat weighing apparatus Gilbert structures of this deformation, has been carried out point to radio frequency input stage and local oscillator switching stage
From as shown in Figure 3.
The differential radio frequency that the radio frequency input stage of low-noise mixer includes transistor T1, T2 composition is inputted to pipe, transistor
T1, T2 base stage connect differential signal input, receive the differential signal exported from the 3rd balun.Transistor T1, T2 base
Pole also receives bias voltage Vb_RF by transmission line TL7, TL6 respectively.Transistor T1, T2 emitting stage are sequentially connected biography after being connected
It is grounded after defeated line TL5, resistance R1.Transistor T1 colelctor electrodes pass sequentially through transmission line TL12, TL10 and are connected to power supply VCC, crystal
Pipe T2 colelctor electrodes pass sequentially through transmission line TL13, TL11 and are connected to power supply VCC.TL10, TL11, TL12, TL13 are constituted and poor
Divide the radio frequency load matching circuit that input is connected to pipe collector.
The local oscillator switching stage of low-noise mixer also includes the local oscillator switch arrays being made up of transistor T3, T4, T5, T6,
After transistor T3, T4 emitter stage are connected and it is connected to ground by transmission line TL17, TL16, resistance R2；Transistor T5, T6 emitter stage
After being connected and it is connected to ground by transmission line TL18, TL16, resistance R2；Transistor T3, T6 base stage is connected to local oscillator after being connected
Signal input part, receives local oscillation signal, and transistor T4, T5 base stage is connected to local oscillation signal input after being connected, receive local oscillator
Signal.Transistor T3, T5 colelctor electrode are connected to intermediate-freuqncy signal output port after being connected, during T4, T6 colelctor electrode are connected to after being connected
Frequency signal output port.Transistor T3, T5 colelctor electrode are connected to power supply VCC, transistor T4, T6 collection by the first RC parallel circuits
Electrode is connected to power supply VCC by the 2nd RC parallel circuits.The first RC parallel circuits include resistance R3, electric capacity C5；It is described
2nd RC parallel circuits include resistance R4, electric capacity C6.
Transistor T3, T4 emitter stage pass sequentially through transmission line TL14, capacitance C3, transmission line TL12 after being connected and are connected to
Transistor T1 colelctor electrodes；Transistor T5, T6 pass sequentially through transmission line TL15, capacitance C4, transmission line TL13 connections after being connected
To transistor T2 colelctor electrodes.I.e. radio-frequency differential input is connect after capacitance C1, C2 again by TL10, TL11 to pipe collector output
It is fitted on local oscillator switch arrays.
Transmission line TL5, TL6, TL7, TL17, TL18 are all the transmission line of the length of λ/4.
The radiofrequency signal that antenna is received is divided into differential signal by the 3rd balun.This differential signal enters low-noise mixer.
This frequency mixer compares more traditional Gilbert structures, and the input of its radio-frequency differential is separated to pipe from local oscillator switch arrays.Tool
Have following advantage：（1）Radio-frequency differential is inputted can be individually excellent according to itself noise and the linearity to the electric current of pipe
Change, and its electric current also needs to ensure gain held stationary in temperature change；（2）Local oscillator switch arrays can use lower electricity
Stream is so as to reduce the 1/f noise introduced by switch arrays；（3）Radio-frequency differential input uses electric current 20mA to pipe after optimization,
Local oscillator switch arrays use 5mA electric currents after optimization；（4）The improvement Gilbert separated using radio frequency input stage and switching stage
Structure, can respectively be optimized with linear degree, noise, temperature stability to radio frequency input stage and switching stage：Radio frequency is inputted
What it is to pipe operating current is optimized according to noise and linearity two indices, and electric current selected value is probably that transistor is maximum special
Levy frequency fTThe 60% of electric current；In order to reduce 1/f noise, it is about transistor maximal characteristic frequency f that switching stage, which chooses small electric current,TElectricity
The 10% of stream；（5）Transmission circuit network TL10, TL11, TL12, TL13, T14, T15 matching are connected to radio frequency input stage and switching stage,
Improve gain, the linearity and the noise coefficient of whole frequency mixer.
Embodiment 4
The present embodiment and the difference of embodiment 1 are that further, the frequency multiplier in local oscillation signal times frequency module uses one
The differential pair tube structure that the voltage extracted on its emitter and collector does frequency-doubled signal is planted, as shown in Figure 4.
Frequency multiplier includes the first order differential pair tube that transistor T7, T8 are constituted, transistor T7, T8 base stage connection local oscillation signal
Input, receives 38.25GHz signal.Transistor T7, T8 base stage are also connected to biased electrical by transmission line TL3, TL2 respectively
Input is pressed, bias voltage Vb1 is received.Transistor T7, T8 emitter stage is connected and passes through transmission line TL19, resistance R5 connections
To ground.Transistor T7, T8 colelctor electrode is connected with resonant load circuit, resonant load circuit include transmission line TL22, TL24,
TL25, TL23 and electric capacity Cc, transmission line TL22, TL24, TL25, TL23 are sequentially connected, and electric capacity Cc one end is connected to transmission line
Between TL22 and TL24, the other end is connected between transmission line TL23, TL25.Transmission line TL22, TL23 respectively with transistor T7,
T8 colelctor electrodes are connected.Transmission line TL6, TL7 common port are connected to power supply VCC by transmission line TL26.
Local oscillation signal is sent to class buffer amplifier by the differential pair that described transistor T7, T8 are constituted by match circuit.
The class buffer amplifier of frequency multiplier includes the second level differential pair that transistor T9, T10 are constituted, transistor T9, T10 composition
Differential pair tube constitute cobasis state group.The difference that transistor T9, T10 emitter stage are made up of match circuit and transistor T7, T8
Divide to connection.Transistor T9, T10 emitter stage pass through transmission line TL32, resistance again after being connected respectively by transmission line TL33, TL34
R6 is connected to ground.Transistor T9 colelctor electrodes are connected to power supply VCC by transmission line TL35, TL37；Transistor T10 colelctor electrodes pass through
Transmission line TL36, TL38 are connected to power supply VCC.Transistor T9, T10 colelctor electrode are also connected by transmission line TL35, TL36 respectively
To local oscillation signal output port, the local oscillation signal Jing Guo frequency multiplication is exported.Transistor T9, T10 base stage receive bias voltage after being connected
Vb2。
The match circuit include transmission line TL27, TL28, TL29, TL30, TL31, wherein, transmission line TL27, TL29,
TL30 is sequentially connected, and the two ends of the transmission line TL29 are connected to transmission line TL28, TL31 one end, transmission line TL28,
The TL31 other end is connected respectively to transistor T9, T10 emitter stage.Transmission line TL30 one end is connected to transistor T7, T8 hair
Common port between emitter-base bandgap grading.Transmission line TL27 one end is connected to the resonant load circuit being connected with transistor T7, T8 colelctor electrode
Middle transmission line TL24, TL25 common port.Transmission line TL20, TL21 are the transmission line of the length of λ/4.
Now, between transistor T7, T8 colelctor electrodes the common point B productions between common point A and transistor T7, T8 emitter stage
Raw differential signal is two times of the local oscillation signal frequency of local oscillation signal input input.By match circuit by double frequency
Local oscillation signal is transferred to next stage and carries out Hyblid Buffer Amplifier so that output signal drives final-stage power amplifier.Transmission line TL191 length
Spend is λ/2 in 77.5GHz, it is ensured that positive negative signal road 180 degree phase shift.Class buffer amplifier has transistor T9, T10 differential pair to constitute altogether
Base configuration, its emitting stage receives the 77.5GHz signals that matching network transmission comes, and meets TL194, TL195, TL196 and resistance R2
To ground, the connection of transistor T9, T10 colelctor electrode TL35, TL36, TL37, TL28 also constitute load and match circuit, to rear class work(
Rate amplifier output drive signal.After optimized, frequency multiplier first order differential pair tube uses 10mA electric currents, second level differential pair tube
Using 10mA electric currents, frequency multiplier consumes current limliting 20mA altogether.
Embodiment 5
The present embodiment and the difference of embodiment 1 be, further, in local oscillation signal times frequency module, power amplifier
Signal after frequency multiplication is subjected to power amplification, power amplifier uses a kind of cascode forms for separating deformation, as shown in Figure 5.
Power amplifier includes the cascode level differential pair that transistor T11, T12 are constituted, and the connection of transistor T11, T12 base stage is originally
Shake signal input part, receives 78.5GHz local oscillation signal.Transistor T11, T12 base stage also pass through transmission line TL41, TL40 respectively
Receive bias voltage Vb2.Transistor T11, T12 emitter stage are connected to ground after being connected by transmission line TL39, resistance R7.Transistor
T11 colelctor electrodes are connected to power supply VCC by transmission line TL42, TL44；Transistor T12 colelctor electrodes pass through transmission line TL43, TL45
It is connected to power supply VCC.
Power amplifier also includes the common base differential pair that transistor T13, T14 are constituted, and transistor T13, T14 pass through respectively
Transmission line TL49, TL50 are connected to ground by transmission line TL48, resistance R8 again after being connected.Transistor T13, T14 base stage are connected simultaneously
Receive bias voltage Vb2.Transistor T13 colelctor electrodes are connected to power supply VCC by transmission line TL51, TL53；Transistor T14 current collections
Pole is connected to power supply VCC by transmission line TL52, TL54.Transistor T13, T14 are also exported by transmission line TL51, TL52 respectively
By the local oscillation signal of power amplification.
Cascode level differential pair transmits a signal to next stage common base differential pair by match circuit and is amplified.Power is put
The match circuit of big device includes transmission line TL46, TL47；Transistor T11 colelctor electrodes are connected to crystalline substance with transmission line TL42, TL46 is crossed
Body pipe T13 emitter stages；Transistor T12 colelctor electrodes are connected to transistor T14 emitter stages with transmission line TL43, TL47 is crossed.Common base
Differential pair constitutes load and match circuit by connecting transmission line TL51, TL52, TL53, TL54, and local oscillation signal is exported to rear class.
This power amplifier structure, cascode level and grounded base complete signal by AC coupled and amplified, therefore grounded base
There can be more voltage margins, realize higher power output.After optimized, cascode level differential pair uses 10mA electric currents, cobasis
Pole differential pair uses 20mA electric currents, and power amplifier consumes limit 30mA altogether.
Embodiment 6
The present embodiment and the difference of embodiment 1 are that further, work(sub-module is divided using the work(of wilkinson structures
Device, the local oscillation signal after frequency multiplication is amplified is divided into 4 passages that rf signal reception module is delivered on four roads.
As shown in fig. 6, all transmission line values of power splitter* 50 Ω, all 50 ohm of resistance values.The power splitter
Including first order power-devided circuit and with two second level power-devided circuits.
The first order power-devided circuit connects local oscillation signal input, second level power splitter connection local oscillation signal output end.
TL55, TL56, R9, R10 constitute first order power-devided circuit, TL57, TL58, R11, R12 and TL59, TL60, R13, R14 group respectively
Into two second level power-devided circuits, the output of 4 tunnels is produced, per the road small 12dB of output signal ratio original signal.
The four road local oscillation signals that power splitter is produced are converted to differential signal by the 4th balun respectively, then are put by the second buffering
Big device drives the Gilbert switch elements of low-noise mixer, wherein the structure of the 4th balun and the 3rd bar described in embodiment 2
Human relations structure is identical.Second buffer amplifier is identical with power amplifier structure described in embodiment 5.
It is described above, only it is preferred embodiment of the present utility model, any formal limit is not done to the utility model
System, every any simple modification made according to technical spirit of the present utility model to above example, equivalent variations are each fallen within
Within protection domain of the present utility model.
Claims (10)
1. a kind of reception chip for 77GHz car radars, it is characterised in that include the rf signal reception module of 4 passages
（2）, local oscillation signal times frequency module（1）, work(sub-module（3）With IF signal processing module（4）, the local oscillation signal times frequency module
（1）Receive after local oscillation signal frequency multiplication by work(sub-module（3）It is divided into four tunnels and is delivered to rf signal reception module（2）4 passages
And with rf signal reception module（2）The radiofrequency signal that receives carries out down-converted and is changed into intermediate-freuqncy signal, then is conveyed to
Audio signalprocessing module（4）Exported after processing.
2. a kind of reception chip for 77GHz car radars according to claim 1, it is characterised in that the local oscillator
Signal frequency multiplication module（1）Including local oscillation signal input interface（11）, local oscillation signal input interface（11）The first bar being sequentially connected
Human relations（12）, the first buffer amplifier（13）, frequency multiplier（14）, power amplifier（15）With the second balun（16）, the second balun
（16）Connect work(sub-module（3）.
3. a kind of reception chip for 77GHz car radars according to claim 1, it is characterised in that the radio frequency
Signal receiving module（2）Including the 3rd balun（22）, low-noise mixer（23）, the 4th balun（24）, the second buffer amplifier
（25）, the 3rd buffer amplifier（26）And rf input interface（21）, the rf input interface（21）It is connected with the 3rd in turn
Balun（22）, low-noise mixer（23）, the 3rd buffer amplifier（26）, the low-noise mixer（23）Also it is connected with turn
Second buffer amplifier（25）, the 4th balun（24）, the 4th balun（24）Connect work(sub-module（3）.
4. a kind of reception chip for 77GHz car radars according to claim 1, it is characterised in that work(sub-module
（3）For wilkinson power splitters.
5. a kind of reception chip for 77GHz car radars according to claim 1, it is characterised in that the intermediate frequency
Signal processing module（4）Including setting intermediate-freuqncy signal output interface（43）With with intermediate-freuqncy signal output interface（43）It is sequentially connected
5th buffer amplifier（42）With the 4th buffer amplifier（41）, the 4th buffer amplifier（41）With rf signal reception module
（2）Connection.
6. a kind of reception chip for 77GHz car radars according to claim 3, it is characterised in that the described 3rd
Buffer amplifier（26）For emitter follower.
7. a kind of reception chip for 77GHz car radars according to claim 5, it is characterised in that the described 5th
Buffer amplifier（42）For the differential emitter follower of the regulation for amplitude and driving, the 4th buffer amplifier（41）For
First-level buffer amplifier.
8. a kind of reception chip for 77GHz car radars according to claim 3, it is characterised in that the low noise
Sound frequency mixer（23）Including transistor T1, T2, transistor T1, T2 base stage connection differential signal input；Described transistor T1, T2
Base stage also receives bias voltage by transmission line TL7, TL6 respectively；Transistor T1, T2 emitting stage are sequentially connected transmission line after being connected
It is grounded after TL5, resistance R1；Transistor T1 colelctor electrodes pass sequentially through transmission line TL12, TL10 and are connected to power supply, transistor T2 current collections
Pole passes sequentially through transmission line TL13, TL11 and is connected to power supply；Transistor T3, T4 emitter stage be connected after and by transmission line TL17,
TL16, resistance R2 are connected to ground；It is connected to after transistor T5, T6 emitter stage are connected and by transmission line TL18, TL16, resistance R2
Ground；Transistor T3, T6 base stage is connected to local oscillation signal input after being connected, transistor T4, T5 base stage is connected to after being connected
Local oscillation signal input；Transistor T3, T5 colelctor electrode are connected to intermediate-freuqncy signal output port after being connected, T4, T6 colelctor electrode are connected
After be connected to intermediate-freuqncy signal output port；Transistor T3, T5 colelctor electrode are connected to power supply by the first RC parallel circuits, transistor
T4, T6 colelctor electrode are connected to power supply by the 2nd RC parallel circuits；The first RC parallel circuits include resistance R3, electric capacity C5；
The 2nd RC parallel circuits include resistance R4, electric capacity C6；Transistor T3, T4 emitter stage pass sequentially through transmission line after being connected
TL14, capacitance C3, transmission line TL12 are connected to transistor T1 colelctor electrodes；Transistor T5, T6 pass sequentially through transmission after being connected
Line TL15, capacitance C4, transmission line TL13 are connected to transistor T2 colelctor electrodes.
9. a kind of reception chip for 77GHz car radars according to claim 3, it is characterised in that frequency multiplier
（14）Including transistor T7, T8, transistor T7, T8 base stage connection local oscillation signal input；Transistor T7, T8 base stage are also led to respectively
Cross transmission line TL21, TL20 and receive bias voltage；Transistor T7, T8 emitter stage are connected and connected by transmission line TL19, resistance R5
It is connected to ground；Transistor T7, T8 colelctor electrode is connected with resonant load circuit, resonant load circuit include transmission line TL22, TL24,
TL25, TL23 and electric capacity Cc, transmission line TL22, TL24, TL25, TL23 are sequentially connected, and electric capacity Cc one end is connected to transmission line
Between TL22 and TL24, the other end is connected between transmission line TL23, TL25；Transmission line TL22, TL23 respectively with transistor T7,
T8 colelctor electrodes are connected；Transmission line TL6, TL7 common port are connected to power supply by transmission line TL26；Transistor T9, T10 emitter stage
It is connected to ground by transmission line TL32, resistance R6 again after being connected respectively by transmission line TL33, TL34；Transistor T9 colelctor electrodes lead to
Cross transmission line TL35, TL37 and be connected to power supply；Transistor T10 colelctor electrodes are connected to power supply by transmission line TL36, TL38；Crystal
Pipe T9, T10 colelctor electrode are also connected to local oscillation signal output port by transmission line TL35, TL36 respectively, and output is by frequency multiplication
Local oscillation signal；Transistor T9, T10 base stage receive bias voltage after being connected；Transmission line TL27, TL29, TL30 are sequentially connected, transmission
Line TL29 two ends are connected to transmission line TL28, TL31 one end, and transmission line TL28, TL31 other end are connected respectively to
Transistor T9, T10 emitter stage；Transmission line TL30 one end is connected to the common port between transistor T7, T8 emitter stage；Transmission line
TL27 one end is connected to the public of transmission line TL24, TL25 in the resonant load circuit being connected with transistor T7, T8 colelctor electrode
End.
10. a kind of reception chip for 77GHz car radars according to claim 3, it is characterised in that power amplification
Device（15）Including transistor T11, T12, transistor T11, T12 base stage connection local oscillation signal input receive 78.5GHz local oscillator
Signal；Transistor T11, T12 base stage also receive bias voltage by transmission line TL41, TL40 respectively；Transistor T11, T12 launch
It is connected to ground by transmission line TL39, resistance R7 after being extremely connected；Transistor T11 colelctor electrodes are connected by transmission line TL42, TL44
To power supply；Transistor T12 colelctor electrodes are connected to power supply by transmission line TL43, TL45；Transistor T13, T14 pass through transmission respectively
Line TL49, TL50 are connected to ground by transmission line TL48, resistance R8 again after being connected；Transistor T13, T14 base stage is connected and received
Bias voltage；Transistor T13 colelctor electrodes are connected to power supply by transmission line TL51, TL53；Transistor T14 colelctor electrodes pass through transmission
Line TL52, TL54 are connected to power supply；Transistor T13, T14 also pass through power amplification by transmission line TL51, TL52 output respectively
Local oscillation signal；Transistor T11 colelctor electrodes are connected to transistor T13 emitter stages with transmission line TL42, TL46 is crossed；Transistor T12
Colelctor electrode is connected to transistor T14 emitter stages with transmission line TL43, TL47 is crossed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720025106.6U CN206378587U (en) | 2017-01-10 | 2017-01-10 | A kind of reception chip for 77GHz car radars |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720025106.6U CN206378587U (en) | 2017-01-10 | 2017-01-10 | A kind of reception chip for 77GHz car radars |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106707246A (en) * | 2017-01-10 | 2017-05-24 | 成都旋极星源信息技术有限公司 | Receiver chip for automotive radar with frequency of 77GHz |
| CN112332877A (en) * | 2019-08-05 | 2021-02-05 | 通用汽车环球科技运作有限责任公司 | Receiver apparatus |
-
2017
- 2017-01-10 CN CN201720025106.6U patent/CN206378587U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106707246A (en) * | 2017-01-10 | 2017-05-24 | 成都旋极星源信息技术有限公司 | Receiver chip for automotive radar with frequency of 77GHz |
| CN106707246B (en) * | 2017-01-10 | 2023-06-30 | 成都旋极星源信息技术有限公司 | Receiving chip for 77GHz automobile radar |
| CN112332877A (en) * | 2019-08-05 | 2021-02-05 | 通用汽车环球科技运作有限责任公司 | Receiver apparatus |
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