CN206523863U - Piezoresistive transducer, pressure-detecting device, electronic equipment - Google Patents
Piezoresistive transducer, pressure-detecting device, electronic equipment Download PDFInfo
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- CN206523863U CN206523863U CN201720124206.4U CN201720124206U CN206523863U CN 206523863 U CN206523863 U CN 206523863U CN 201720124206 U CN201720124206 U CN 201720124206U CN 206523863 U CN206523863 U CN 206523863U
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Abstract
The utility model is related to electronic technology apparatus field, discloses a kind of piezoresistive transducer, pressure-detecting device, electronic equipment.In the utility model, piezoresistive transducer includes substrate and semibridge system pressure drag sensing unit；Semibridge system pressure drag sensing unit includes two bridge arms, two bridge arm series connection；Wherein, signal acquisition terminal is drawn in the connection end of two bridge arms；Pumping signal is drawn respectively and applies end in the open end of two bridge arms；Each bridge arm includes at least one resistance unit, and resistance unit is located on substrate, wherein, the quantity for the resistance unit that two bridge arms include is identical；One resistance unit includes resistive layer and two lead terminals；Two lead terminals are connected to the two ends of resistive layer；Two lead terminals and resistive layer are attached on substrate.The invention also discloses a kind of pressure-detecting device and electronic equipment.Compared with prior art, the utility model makes piezoresistive transducer when realizing pressure detecting function, can suppress temperature drift, and increase semaphore.
Description
Technical field
The utility model is related to electronic technology apparatus field, more particularly to a kind of piezoresistive transducer, pressure-detecting device,
Electronic equipment.
Background technology
In the prior art, the pressure detecting scheme of electronic equipment, is mainly based upon what capacitance sensor was detected.As schemed
Shown in 1, the principle of this scheme is by cover clamp 2 using finger 1.The pressure that finger 1 applies is transmitted to electric capacity by cover plate 2 and passed
On first pole plate 41 of sensor 4.The stress deformation of first pole plate 41, occurs the spacing between the first pole plate 41 and the second pole plate 42
Change.So as to which the size of the capacitance of capacitance sensor 4 is changed, therefore the detection of pressure can be realized according to above-mentioned principle.
But inventor is during the utility model is realized, there is following technical problem in discovery in the prior art：Base
Pressure is detected in capacitance sensor, it is necessary to which the first pole plate 41 and the second pole plate 42 of capacitance sensor 4 are oppositely arranged.The
One pole plate 41 needs to be bonded on cover plate 2 by adhesive glue 3.Second pole plate 42 is bonded on loading plate 5 by adhesive glue 3.But
It is that this design method is higher to the internal space requirements of whole electronic equipment, and to the first pole plate 41, the second pole plate
42nd, the cooperation of cover plate 2 and loading plate 5, allowance control, assemble, dispatch from the factory test etc. all have higher requirements.
Utility model content
The purpose of the utility model embodiment is to provide a kind of piezoresistive transducer, pressure-detecting device, electronic equipment,
So that piezoresistive transducer is when realizing pressure detecting function, temperature drift can be suppressed, increase semaphore and to whole electricity
The internal space requirements of sub- equipment are than relatively low, it is easy to promote the use of.
In order to solve the above technical problems, the utility model embodiment provide a kind of piezoresistive transducer, including substrate and
Semibridge system pressure drag sensing unit；Semibridge system pressure drag sensing unit includes two bridge arms, two bridge arm series connection；Wherein, two bridge arms
Connection end draw signal acquisition terminal；Pumping signal is drawn respectively and applies end in the open end of two bridge arms；Each bridge arm includes
At least one resistance unit, resistance unit is located on substrate, wherein, the quantity for the resistance unit that two bridge arms include is identical；Electricity
Hindering unit includes resistive layer and two lead terminals；Two lead terminals are connected to the two ends of resistive layer；Two lead ends
Son and resistive layer are attached on substrate.
The utility model embodiment additionally provides a kind of pressure-detecting device, including the above-mentioned pressure resistance type for being used to receive pressure
Sensor and the place for being handled the signal that the piezoresistive transducer is exported the pressure information to obtain the pressure
Manage device.
The utility model embodiment additionally provides a kind of electronic equipment, including above-mentioned pressure-detecting device.
The utility model embodiment in terms of existing technologies, includes substrate and semibridge system pressure by piezoresistive transducer
Hinder the design of sensing unit so that piezoresistive transducer can suppress temperature drift when realizing pressure detecting function, can be with
Increase semaphore.Also, the detection of pressure is realized using piezoresistive transducer, only piezoresistive transducer need to be arranged in into some treats
Detect on stress surface.Piezoresistive transducer stress produces deformation, so that respective change occurs for the resistance of piezoresistive transducer.
The structure design of capacitance type sensor pole plate can be avoided.To the internal space requirements of whole electronic equipment than relatively low, it is easy to push away
Extensively use.And the assembling mode that piezoresistive transducer is assembled into electronic equipment is relatively simple, help to sense pressure resistance type
Device is fused on all parts of electronic equipment to realize various abundant applications.
In addition, semibridge system pressure drag sensing unit is two, respectively the first semibridge system pressure drag sensing unit and the second half-bridge
Formula pressure drag sensing unit；The pumping signal of the first semibridge system pressure drag sensing unit applies end and the second semibridge system pressure drag
The pumping signal of sensing unit applies end electrical connection.
In addition, the first semibridge system pressure drag sensing unit and the second semibridge system pressure drag sensing unit include two resistance lists
Member, the wherein one side of substrate is laid out two resistance units, and the another side of substrate is laid out two resistance units.
In addition, substrate at least two；Resistance unit is provided with each substrate.
In addition, resistive layer be shaped as rectangle, it is snakelike or back-shaped.
In addition, pressure-detecting device also includes being used to receive pressure and by the pressure conduction to the piezoresistive transducer
Cover plate；The cover plate is covered on the piezoresistive transducer, provided with bonding glue-line between piezoresistive transducer and cover plate.
In addition, electronic equipment includes side key component, each side key component includes a piezoresistive transducer.
In addition, provided with raised buckle between side key component at least two, adjacent piezoresistive transducer, raised buckle
Highly it is more than the height of the piezoresistive transducer.
In addition, electronic equipment includes the fingerprint recognition button assembly with pressure detecting function, fingerprint recognition button assembly
Including fingerprint module and piezoresistive transducer, the piezoresistive transducer is two；The fingerprint module is arranged at the cover plate
Inner side, and two piezoresistive transducers are located at the both sides of the fingerprint module respectively.
In addition, electronic equipment includes the display module with touch function, the display module also includes display screen and touch
Sensor；The display location is between the cover plate and the piezoresistive transducer；The touch sensor be located at cover plate and
Between the display screen, or the touch sensor is integrated in inside the display screen, wherein, the piezoresistive transducer is
Transparent material；Or, the touch sensor is located between cover plate and the piezoresistive transducer；The display screen is fixed on institute
Piezoresistive transducer is stated, wherein, the piezoresistive transducer is transparent material.
Brief description of the drawings
One or more embodiments are illustrative by the picture in corresponding accompanying drawing, these exemplary theorys
The element with same reference numbers label is expressed as similar element in the bright restriction not constituted to embodiment, accompanying drawing, removes
Composition is not limited the non-figure having in special statement, accompanying drawing.
Fig. 1 is the structural representation of the pressure detecting scheme of electronic equipment in the prior art；
Fig. 2 is the half-bridge topology schematic diagram according to piezoresistive transducer in first embodiment；
Fig. 3 is the half-bridge application principle circuit diagram according to piezoresistive transducer in first embodiment；
Fig. 4 is the full-bridge topologies schematic diagram according to piezoresistive transducer in first embodiment；
Fig. 5 is the equivalent resistance schematic diagram according to full-bridge topologies in first embodiment；
Fig. 6 is the full-bridge application principle circuit diagram according to piezoresistive transducer in first embodiment；
Fig. 7 is first layout type schematic diagram of the resistance unit on substrate in an embodiment；
Fig. 8 is second layout type schematic diagram of the resistance unit on substrate in an embodiment；
Fig. 9 is threeth layout type schematic diagram of the resistance unit on substrate in an embodiment；
Figure 10 is according to the complete of the piezoresistive transducer that each bridge arm is made up of two resistance units in first embodiment
Bridge topological structure schematic diagram；
Figure 11 is first layout type schematic diagram of the resistance unit scattered distribution on substrate two sides in an embodiment；
Figure 12 is second layout type schematic diagram of the resistance unit scattered distribution on substrate two sides in an embodiment；
Figure 13 is threeth layout type schematic diagram of the resistance unit scattered distribution on substrate two sides in an embodiment；
Figure 14 is second layout type schematic diagram of the resistance unit scattered distribution on two substrates in an embodiment；
Figure 15 is threeth layout type schematic diagram of the resistance unit scattered distribution on two substrates in an embodiment；
Figure 16 is the structural representation of rectangle piezoresistive transducer in an embodiment；
Figure 17 is the structural representation according to the piezoresistive transducer of serpentine resistive layer in first embodiment；
Figure 18 is the structural representation according to back-shaped resistive layer piezoresistive transducer in first embodiment；
Figure 19 is the sectional view according to keyboard in the 3rd embodiment；
Figure 20 is the structural representation according to mouse in the 3rd embodiment；
Figure 21 is according to virtual key laminated construction schematic diagram in the 3rd embodiment；
Figure 22 is according to virtual key sectional view in the 3rd embodiment；
Figure 23 is according to virtual key force analysis figure in the 3rd embodiment；
Figure 24 is according to the side key component structural representation in the 3rd embodiment with keypress function；
Figure 25 is according to the side key component structural representation in the 3rd embodiment with two keypress functions；
Figure 26 is the section view according to the fingerprint recognition button assembly in the 3rd embodiment with two piezoresistive transducers
Figure；
Figure 27 is according to the sectional view for having reeded fingerprint recognition component above the 3rd embodiment cover plate；
Figure 28 is the section view for the fingerprint recognition button assembly that groove is respectively provided with according to the 3rd embodiment cover plate top and bottom
Figure；
Figure 29 is the sectional view for the fingerprint recognition button assembly for having through hole according to the 3rd embodiment cover plate；
Figure 30 is the section view according to the fingerprint recognition button assembly in the 3rd embodiment with a piezoresistive transducer
Figure；
Figure 31 is the sectional view according to the fingerprint recognition button assembly with two pads in the 3rd embodiment；
Figure 32 is the sectional view according to the fingerprint recognition button assembly with a pad in the 3rd embodiment；
Figure 33 is cuing open positioned at the display module between cover plate and display screen according to touch sensor in the 3rd embodiment
View；
Figure 34 is the sectional view that the display module inside display screen is integrated according to touch sensor in the 3rd embodiment；
Figure 35 is the display group being located at according to touch sensor in the 3rd embodiment between cover plate and piezoresistive transducer
The sectional view of part；
Figure 36 is according to electronic equipment sectional view in the 3rd embodiment.
Embodiment
It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer
Each embodiment of type is explained in detail.However, it will be understood by those skilled in the art that each in the utility model
In embodiment, in order that reader more fully understands the application and proposes many ins and outs.But, even if without these skills
Art details and many variations based on following embodiment and modification, can also realize the application technical side claimed
Case.
First embodiment of the present utility model is related to a kind of piezoresistive transducer.As shown in figure 1, piezoresistive transducer bag
Include substrate and semibridge system pressure drag sensing unit.Semibridge system pressure drag sensing unit can suppress temperature when realizing pressure detecting function
Degree drift, can also increase semaphore.Semibridge system pressure drag sensing unit includes two bridge arms, two bridge arm series connection；Wherein, two
Draw signal acquisition terminal in the connection end of bridge arm；Pumping signal is drawn respectively and applies end in the open end of two bridge arms；Each bridge arm
Including at least one resistance unit, resistance unit is located on substrate, wherein, the quantity phase for the resistance unit that two bridge arms include
Together.Resistance unit includes resistive layer and two lead terminals.Two lead terminals are connected to the two ends of resistive layer.Two are drawn
Line terminals and the resistive layer are attached on substrate.
It is used to apply high level or low level it should be noted that pumping signal applies end.Specifically, as shown in Fig. 2
Draw signal acquisition terminal IN in the connection end of two bridge arms.Two bridge arms are the first bridge arm 6 and the second bridge arm 7 respectively.First bridge arm 6
Open end draw pumping signal apply end be used for apply high level (i.e. can the first bridge arm 6 open end application voltage
VDD).The pumping signal that the open end of second bridge arm 7 is drawn applies end, and for applying low level, (i.e. the open end of the second bridge arm can
To be grounded GND).Substrate can be, but not limited to as printing board PCB plate.The material of substrate can be, but not limited to for：Polyamides is sub-
Amine PI materials, polyester resin PET material, glass or polymetylmethacrylate material.As shown in figure 3, being worth mentioning
, piezoresistive transducer is half-bridge topology cellular construction.In order to be distinguished with full-bridge type piezoresistive transducer.Piezoresistive transducer
It is properly termed as half-bridge piezoresistive transducer.Half-bridge piezoresistive transducer 10 accesses detection chip 8, the access master control core of detection chip 8
Piece 9.Specifically, the signal acquisition terminal IN of half-bridge piezoresistive transducer 10 accesses prime by multiplexer switch unit 801
Amplifier unit 803, then by analog to digital conversion circuit unit 804, processor unit 805 is accessed to, processor unit 805 is accessed
To main control chip 9.The pumping signal of half-bridge piezoresistive transducer 10 applies end and accesses to pumping signal circuit unit 802, by swashing
Encourage signal circuit unit 802 and apply voltage for half-bridge piezoresistive transducer 10.Pumping signal circuit unit 802 accesses to processor
Unit 805.When there is pressure to be applied on piezoresistive transducer, the size of the resistance of the resistance of the first bridge arm 6 and the second bridge arm 7
It can change, the dividing ratios of the resistance of the first bridge arm 6 and the resistance of the second bridge arm 7 can be influenceed, so as to influence signal acquisition
Hold IN signal magnitude.Detection chip 8 calculates the size of pressure by detecting signal acquisition terminal IN signal intensity.And working as has
When temperature influences, the resistance drift that the resistance of the resistance of the first bridge arm 6 and the second bridge arm 7 is affected by temperature generation is close,
The dividing ratios of IN points are held essentially constant, so temperature drift is limited to the signal intensity influence that IN signaling points are brought, so
The influence of temperature drift can be inhibited.
In addition, in order to further suppress temperature drift, semibridge system pressure drag sensing unit is two, respectively the first semibridge system pressure drag
Sensing unit and the second semibridge system pressure drag sensing unit；The pumping signal of first semibridge system pressure drag sensing unit applies end and second
The pumping signal of semibridge system pressure drag sensing unit applies end electrical connection.Specifically, the signal of the first half-bridge applies end and second
The signal of half-bridge applies end connection.The earth terminal connection of the earth terminal of first half-bridge and the second half-bridge.First half-bridge and the second half
The signal acquisition terminal of bridge, can be respectively connected to control circuit.As shown in figure 4, two half-bridge parallel connections are stitched together into composition entirely
Bridge topological structure.Resistance unit is four, is first resistor unit 101, second resistance unit 102,3rd resistor unit respectively
103 and the 4th the formation of resistance unit 104 full-bridge topologies, its equivalent circuit is as shown in Figure 5.First resistor unit 101,
Second resistance unit 102, the resistance unit 104 of 3rd resistor unit 103 and the 4th distinguish it is equivalent correspond to first resistor R1,
Second resistance R2,3rd resistor R3 and the 4th resistance R4.First resistor R1, second resistance R2,3rd resistor R3 and the 4th
Resistance R4 is four bridge arms of full-bridge topologies respectively.This electric bridge topology unit has four lead ends.Wherein relative two
Lead end is respectively connected to pumping signal VDD and systematically GND.Two other is signal acquisition terminal, respectively IN+ and IN-.IN+
With the two differential signal input connecting detection chips of IN-.When there is pressure to be applied to piezoresistive transducer, can influence R1 with
R2 dividing ratios, influence R3 and R4 dividing ratios.Both influence ratios are inconsistent, so as to influence the difference between IN+ and IN-
Sub-signal size.And when having temperature influence, R1 and R2, the resistance that R3 is affected by temperature generation with two groups of resistance of R4 are drifted about
It is close.The impacted dividing ratios at IN+ ends and IN- ends are not affected by temperature substantially.So to the difference between IN+ and IN-
Signal magnitude influence is faint, and the signal of chip detection is due to largely the useful signal change produced by pressing, hardware topology
The influence of temperature drift is inhibited in structure.It is noted that piezoresistive transducer is full-bridge topology cellular construction, it can claim
Be full-bridge piezoresistive transducer.As shown in fig. 6, in actual application, full-bridge piezoresistive transducer 11 passes through detection chip 8
Access main control chip 9.Specifically, the IN+ and IN- of full-bridge piezoresistive transducer 11 pass through multiplexer switch unit respectively
801 access pre-amplifier units 803, then by analog to digital conversion circuit unit 804, access to processor unit 805, processor
Unit 805 accesses to main control chip 9.IN+ is connected into different sense channels from IN- respectively, detection speed is favorably improved.
Can be by the way of two sense channels use poll to each full-bridge piezoresistive transducer 11 for forming full-bridge topology unit
Carry out sample detecting one by one.
It should be noted that resistance unit can be located at substrate side by side.As shown in fig. 7, exemplified by full-bridge piezoresistive transducer
Illustrate, resistance unit can be four, and substrate 12 is located at side by side.Four resistance units are located at substrate 12 side by side.To illustrate
Illustrated exemplified by direction.It is successively from left to right, first resistor unit, second resistance unit, 3rd resistor unit and
Four resistance units.Terminal is IN+, IN+, IN-, IN- successively from left to right above four resistance units.Four resistance units
Terminal is VDD, GND, VDD, GND successively from left to right below.As shown in figure 8, four resistance units can also be as follows
Alignment placement is in substrate 12.Terminal is IN-, IN+, IN+, IN- successively from left to right above four resistance units.Four electricity
It is VDD, GND, VDD, GND successively from left to right to hinder terminal below unit.As shown in figure 9, four resistance units can also be with
Following manner alignment placement is in substrate 12.Terminal is IN+, IN-, IN+, IN- successively from left to right above four resistance units.
Terminal is GND, VDD, VDD, GND etc. successively from left to right below four resistance units.No longer enumerate herein.
As shown in Figure 10, each bridge arm of full-bridge can be composed in series by two resistance units.It is noted that each
Bridge arm is not limited to be composed in series by two resistance units.It can also be that three resistance units are composed in series, can also be four electricity
Resistance unit is composed in series, and is no longer enumerated herein.Also, in actual application, situation about allowing in the resistance of resistance unit
Under, each bridge arm can also be that two resistance units are composed in parallel.
In present embodiment, resistance unit scattered distribution contributes to lift the inspection under same deformation effect on the two sides of substrate
Survey semaphore.Specifically, in resistance unit formation full-bridge topologies, by resistance unit scattered distribution the two of substrate
Face, can obtain bigger differential signal variable quantity in the case of identical power.By Fig. 5 citings, if R1 and R2 designs same
One aspect, when same deformation effect is upper to both, the change that they are produced can be more approximate.So cause point at IN+
Pressure ratio example change is smaller, and the semaphore of generation is smaller, and similarly the signal at IN- is also such.And if R1 and R2 is designed not
With aspect on, when same deformation effect is on two divider resistances, R1 change is with R2 change due in difference
Aspect, its variation is increased.So as to influence to increase on the dividing ratios at IN+, reach the effect of promotion signal variable quantity
Really.Similarly signal is in different levels due to R3 and R4 at IN-, also functions to the effect for increasing change amount signal.But IN+ with
Signal at IN- is if both the same ratio is increased, differential signal between that IN+ and IN- or faint.Such as, though
Right R1 and R2 is in different layers, and R3 and R4 is in different layers；But R1 and R3, in same layer, R2 and R4 is in same layer.In this design
Single half-bridge sees that signal is to increase, but the differential signal between the IN+ and IN- between two half-bridges is again without increasing
's.So full-bridge topology at this time is also needed to R1 and the design of this pair of horns bridge arm of R4 in same layer, this pair of bridges of R3 and R2
Arm design can so realize the differential signal increased between IN+ and IN- in same layer.If simply half-bridge topology, then two
Individual resistance unit is in different levels and is conducive to increasing inspection signal.If full-bridge topology, then two in each half-bridge
Individual resistance unit should be in different levels, and diagonal resistance unit should be in same level.As shown in figure 11, preferably
Layout type is laid out two resistance units for the wherein one side of substrate 12.The another side of substrate 12 is laid out two resistance units.Tool
For body, illustrated by taking direction as shown as an example：The resistance unit 104 of first resistor unit 101 and the 4th is located at the upper of substrate 12
Surface.Second resistance unit 102 and 3rd resistor unit 103 are located at the lower surface of substrate 12.And second resistance unit 102 and
Three resistance units 103 are located between the resistance unit 104 of first resistor unit 101 and the 4th.Or, as shown in figure 12, the first electricity
The upper surface that the resistance unit 104 of unit 101 and the 4th is located at substrate 12 is hindered, and positioned at the right part of substrate 12.Second resistance
Unit 102 and 3rd resistor unit 103 are located at the lower surface of substrate 12, and positioned at the left part of substrate 12.Or, such as Figure 13
Shown, second resistance unit 102 and 3rd resistor unit 103 are located at the upper surface of substrate 12, and are located at the left side of substrate 12
Point.The resistance unit 104 of first resistor unit 101 and the 4th is located at the lower surface of substrate 12, and positioned at the right part of substrate 12
Deng.No longer enumerate herein.What deserves to be explained is, in present embodiment to resistance unit substrate 12 per one side particular location and
Specific number, is not limited.
In actual design process, substrate can be designed as at least two；The electricity is provided with each substrate
Hinder unit.As shown in figure 14, illustrated so that substrate is two as an example：Two substrates are first substrate 121, second substrate respectively
122.Two resistance units are laid out on first substrate 121.Two resistance units are laid out on second substrate 122.First substrate 121 is not
With resistance unit with second substrate 122 have resistance unit while be oppositely arranged.Also, first substrate 121 leads to
Adhesive glue 13 is crossed to fix with the resistance unit on second substrate 122.As shown in figure 15, two resistance are laid out on first substrate 121
Unit.Two resistance units are laid out on second substrate 122.First substrate 121 has the one side and second substrate 122 of resistance unit
One side with resistance unit is oppositely arranged.Also, the resistance on the resistance unit and second substrate 122 on first substrate 121
Unit is separately fixed at the two sides of adhesive glue 13.
It should be noted that resistive layer can be, but not limited to as carbon or graphene.The material of two lead terminals can with but
It is not limited to copper or silver paste.It should also be noted that, the length of resistive layer, width, thickness shadow can ring pressure-sensitive resistance unit
Resistance.It can obtain being adapted to the resistance parameter area of detection chip circuit by adjusting the length of resistive layer, width, thickness
Piezoresistive transducer.In actual application, resistance unit 14 accesses main control chip 9 by detection chip 8.Pumping signal list
Member 802 is that resistance unit 14 applies pumping signal.Multiple processing units inside detection chip 8 are adopted to resistance unit 14
Sample.Can detection resistance unit 14 in real time change in resistance, the analog signal change of resistance is converted into data signal, then pass through
Calculation process reports main control chip 9 after obtaining corresponding pressure value size.Main control chip 9 receive after pressure information with default threshold
Value is compared, and then makes corresponding utility command processing.Wherein, the shape of resistive layer 15 can be, but not limited to be as shown in figure 16
Rectangle；As shown in figure 17 is snakelike；Or, as shown in figure 18 back-shaped etc..
By the above, it is seen that, present embodiment includes substrate and semibridge system pressure drag by piezoresistive transducer
The design of sensing unit so that piezoresistive transducer can suppress temperature drift when realizing pressure detecting function, can also increase
Plus signal amount.Also, present embodiment can avoid the structure design of capacitance type sensor pole plate.To in whole electronic equipment
Portion's space requirement is than relatively low, it is easy to promote the use of.The assembling mode that piezoresistive transducer is assembled into electronic equipment is relatively simple,
Help piezoresistive transducer being fused on all parts of electronic equipment to realize various abundant applications.
Second embodiment of the present utility model is related to a kind of pressure-detecting device, including first embodiment is used to receive
The piezoresistive transducer of pressure and for being handled the signal that the piezoresistive transducer is exported to obtain the pressure
The processor of pressure information.
3rd embodiment of the present utility model is related to a kind of electronic equipment, with pressure detecting function, the electronic equipment
Pressure-detecting device including second embodiment.
In actual application, pressure-detecting device also includes being used for receiving pressure and by the pressure conduction to the pressure
The cover plate of resistive sensor.Cover plate is covered on piezoresistive transducer, provided with bonding between piezoresistive transducer and the cover plate
Glue-line, so that piezoresistive transducer fits in cover plate by adhesive glue.
As shown in figure 22, electronic equipment can include keyboard, and keyboard has pressure detecting function.If being printed on cover plate 19
Dry keypad character.Specifically, cover plate 19 is not printed on the one side of keypad character and is fitted with piezoresistive transducer by adhesive glue 13.
Each keypad character covers at least one piezoresistive transducer 20.
As shown in figure 23, it is mouse that electronic equipment, which can include, and mouse has pressure detecting function.Cover plate 19 is that mouse is left
The corresponding shell 191 of key shell 192 corresponding with right mouse button region.
In actual application, as shown in figures 24 and 25, electronic equipment can also include button assembly, button assembly tool
There is pressure detecting function.Button assembly can be virtual key.Preferably, button assembly also includes touch sensor 21；Touch
Sensor 21 is touched positioned at the lower section of cover plate 19.It is noted that now cover plate can be viewing area.It can also be viewing area
The key area of lower section.It can be the arranged beneath piezoresistive transducer 22 of cover plate 19 in electronic equipment virtual key.Also, in
In actual application, there is display screen 23 between cover plate 19 and piezoresistive transducer 22.The function of such button assembly is able to
It is abundant, touch can be not only recognized, pressure can also be recognized, it is thus possible to which the operation to button assembly is provided and more should
With.Such as, exceed a certain given threshold with the pressing keys of finger 1, then respond corresponding set-up function.Such as：Exhalation voice assistant,
Function of search or pattern switching etc..Touch sensor 21 is attached with by adhesive glue 13 below cover plate 19.Or, in cover plate
19 lower sections are attached with display screen 23 by adhesive glue 13, and the lower section of display screen 23 is fixed with piezoresistive transducer 22.Although in hand
Refer to and there was only touch sensor 21 below area pressed A, piezoresistive transducer 22 is not arranged.But as shown in Figure 26, according to
Structural mechanics deformation principle, when finger 1 is pressed against by stress 19 fringe region of cover plate that fulcrum B is supported, not only finger is pressed
The reclinate deformation of intermediate pressure section A.Also there is deformation in non-pushed region.Such as the deformation of the dotted line in Figure 28 to solid line position.So as to
It can be made using this mechanical characteristic using design.Because when finger 1 is pressed into finger area pressed A, the transmission of power makes
The region of display screen 23 is obtained also to deform upon.Accordingly it is also possible to be pressed using the piezoresistive transducer 22 in the region of display screen 23 to recognize
Key pressure.
In addition, button assembly can also be the side key component of electronic equipment.As shown in figure 27, it is side switch group in button assembly
During part, cover plate 19 is the side bound edge of electronic equipment.It is noted that the assembling of side bound edge can be metal or non-gold
Belong to material assembling, or metal and the Hybrid assembling of nonmetallic materials.Piezoresistive transducer 22 is attached to side by adhesive glue 13
The inner side on bread side.Side bound edge could be arranged to convex form, it is ensured that finger pressing effect.As shown in figure 28, pressure drag
Can be provided with raised buckle 24 between formula sensor 22 at least two, adjacent piezoresistive transducer 22.Specifically, side switch
May be two, such as power key and volume key.When side switch is power key and volume key, power key and volume key are all disposed with pressure
Resistive sensor 22.Two piezoresistive transducers 22 are the inner sides that side bound edge is attached to by adhesive glue 13.Wherein, it is raised
Buckle 24 can increase the intensity of cover plate.It is noted that the both sides of piezoresistive transducer 22 are arranged with raised buckle 24.
Preferably, the height of raised buckle 24 is more than the height of piezoresistive transducer 22.Specifically, the height of raised buckle 24 is big
In the thickness sum of piezoresistive transducer 22 and adhesive glue 13.Raised buckle 24 assumes there are multiple fulcrums equivalent to bound edge 19,
Beam type framework is formed, similar Figure 28 mechanics framework can not only play the fastness for reinforcing bound edge, moreover it is possible to increase what is produced
Deformation quantity.
In addition, button assembly can also be fingerprint recognition button assembly, as shown in figure 29, piezoresistive transducer 22 is two
It is individual.Fingerprint recognition button assembly also includes fingerprint module 25.Fingerprint module 25 is fixed on the inner side of cover plate 19, and two pressure drags
Formula sensor 22 is located at the both sides of fingerprint mould 25 respectively., as shown in figures 30 and 31, can in order to increase the sensitivity of fingerprint recognition
To be provided with groove 26 at least one side of cover plate 19.And groove 26 corresponds to the position of fingerprint module 25.Specifically, Ke Yi
The upper surface of cover plate 19 is provided with groove 26；Or, groove 26 can be provided with the lower surface of cover plate 19；Or, can also be in lid
The upper and lower surface of plate 19 is simultaneously provided with groove 26；Or, as shown in figure 32, cover plate 19 is provided with through hole, and through hole corresponds to fingerprint
The position of module 25.
In actual design process, as shown in figure 33, two piezoresistive transducers 22 are not limited to be located at fingerprint mould respectively
25 both sides.Such as, fingerprint module 25 is fixed on the inner side of cover plate 19, and piezoresistive transducer 22 is fixed on finger by adhesive glue 13
Line module 25.It should be noted that as shown in figs. 34 and 35, piezoresistive transducer 22 can be, but not limited to by pad or
Person's glue, band calymma cotton etc. 27 is fixed on fingerprint module 25., can be in pressure drag in order to protect piezoresistive transducer 22 without damage
One side on formula sensor 22 away from the pad is provided with salient point 28.
Electronic equipment can also include the display module with touch function, and display module has pressure detecting function, shows
Component also includes display screen and touch sensor.Display location is between cover plate and piezoresistive transducer.Wherein, pressure resistance type is sensed
Device can be designed to transparent material.Specifically, as shown in figure 36, touch sensor 30 be located at cover plate 19 and display screen 29 it
Between.Also, touch sensor 30 is mutually fixed by adhesive glue 13 with cover plate 19.Touch sensor 30 passes through adhesive glue 13 and display
Mutually fixed between screen 29.As shown in figure 34, touch sensor is integrated in inside display screen 29.Cover plate 19 and display screen 29 pass through viscous
Rubber alloy 13 is mutually fixed.Or, as shown in figure 35, display module also includes display screen 29 and touch sensor 30.Touch sensor
30 are located between cover plate 19 and piezoresistive transducer 22.Display screen 29 is fixed on piezoresistive transducer 22.Also, cover plate 19 passes through
Adhesive glue 13 is fixed on touch sensor 30.Touch sensor 30 is fixed on piezoresistive transducer 22 by adhesive glue 13.Pressure drag
Formula sensor 22 is fixed on display screen 29 by adhesive glue 13.
It is seen that, present embodiment is corresponding with first embodiment, and present embodiment can be mutual with first embodiment
It is engaged implementation.The relevant technical details mentioned in first embodiment are still effective in the present embodiment, in order to reduce weight
It is multiple, repeat no more here.Correspondingly, the relevant technical details mentioned in present embodiment are also applicable in first embodiment
In.
By the above, it is seen that, present embodiment causes piezoresistive transducer when realizing pressure detecting function,
Temperature drift can be suppressed.Also, present embodiment can avoid the structure design of capacitance type sensor pole plate.To whole electronics
The internal space requirements of equipment are than relatively low, it is easy to promote the use of.Piezoresistive transducer is assembled into the assembling mode of electronic equipment
It is relatively simple, help piezoresistive transducer being fused on all parts of electronic equipment to realize various abundant applications.
Preferably, as shown in figure 36, electronic equipment can also include structural member 31.Pressure-detecting device is
Display module 32 with touch function.There is gap 33 between display module 32 and structural member 31.Wherein, filled between gap 33
Foam.It is noted that structural member 31 can be, but not limited to as center, rear shell, printed circuit board (PCB) or battery.
Because first and second embodiment is mutually corresponding with present embodiment, therefore present embodiment can be with first and second in fact
The mode of applying is worked in coordination implementation.The relevant technical details mentioned in first and second embodiment are still effective in the present embodiment,
The technique effect that can be reached in first and second embodiment can similarly be realized in the present embodiment, in order to reduce weight
It is multiple, repeat no more here.Correspondingly, the relevant technical details mentioned in present embodiment are also applicable in first and second embodiment party
In formula.
By the above, it is seen that, present embodiment causes piezoresistive transducer when realizing pressure detecting function,
Temperature drift can be suppressed, increase semaphore.Also, present embodiment can avoid the structure of capacitance type sensor pole plate from setting
Meter.To the internal space requirements of whole electronic equipment than relatively low, it is easy to promote the use of.Piezoresistive transducer is assembled into electronics to set
Standby assembling mode is relatively simple, helps piezoresistive transducer being fused on all parts of electronic equipment various to realize
Abundant application.
It will be understood by those skilled in the art that the respective embodiments described above are to realize specific implementation of the present utility model
Example, and in actual applications, can to it, various changes can be made in the form and details, without departing from spirit of the present utility model
And scope.
Claims (13)
1. a kind of piezoresistive transducer, it is characterised in that including substrate and semibridge system pressure drag sensing unit；
The semibridge system pressure drag sensing unit includes two bridge arms, two bridge arm series connection；Wherein, the company of two bridge arms
Connect end and draw signal acquisition terminal；Pumping signal is drawn respectively and applies end in the open end of two bridge arms；
Each described bridge arm includes at least one resistance unit, and the resistance unit is located on the substrate, wherein, two institutes
The quantity for stating the resistance unit that bridge arm includes is identical；
One resistance unit includes resistive layer and two lead terminals；
Described two lead terminals are connected to the two ends of the resistive layer；
Described two lead terminals and resistive layer attachment are on the substrate.
2. piezoresistive transducer according to claim 1, it is characterised in that the semibridge system pressure drag sensing unit is two
It is individual, respectively the first semibridge system pressure drag sensing unit and the second semibridge system pressure drag sensing unit；
The pumping signal of the first semibridge system pressure drag sensing unit applies end and the second semibridge system pressure drag sensing unit
Pumping signal applies end electrical connection.
3. piezoresistive transducer according to claim 2, it is characterised in that the first semibridge system pressure drag sensing unit and
Second semibridge system pressure drag sensing unit includes two resistance units, and the wherein one side of the substrate is laid out two resistance units,
The another side of the substrate is laid out two resistance units.
4. piezoresistive transducer as claimed in any of claims 1 to 3, it is characterised in that the substrate is at least
Two；
The resistance unit is provided with each substrate.
5. piezoresistive transducer according to claim 1, it is characterised in that the resistive layer be shaped as rectangle, it is snakelike
Or it is back-shaped.
6. a kind of pressure-detecting device, it is characterised in that including the pressure resistance type sensing described in any one in claim 1 to 5
Device and the processor for being handled the signal that the piezoresistive transducer is exported the pressure information to obtain the pressure,
Wherein, the piezoresistive transducer is used to receive pressure.
7. a kind of electronic equipment, with pressure detecting function, it is characterised in that including：Pressure detecting dress described in claim 6
Put.
8. electronic equipment according to claim 7, it is characterised in that the electronic equipment also include being used for receiving pressure and
By the cover plate of the pressure conduction to the piezoresistive transducer；
The cover plate is covered on the piezoresistive transducer, and adhesive glue is provided between the piezoresistive transducer and the cover plate
Layer.
9. electronic equipment according to claim 7, it is characterised in that the electronic equipment includes side key component, each
The side key component includes a piezoresistive transducer.
10. electronic equipment according to claim 9, it is characterised in that the side key component at least two, adjacent institute
State provided with raised buckle between piezoresistive transducer, the height of the raised buckle is more than the height of the piezoresistive transducer.
11. electronic equipment according to claim 8, it is characterised in that the electronic equipment includes having pressure detecting work(
The fingerprint recognition button assembly of energy, the fingerprint recognition button assembly includes fingerprint module and piezoresistive transducer, the pressure drag
Formula sensor is two；The fingerprint module is arranged on the inside of the cover plate, and two piezoresistive transducers are located at respectively
The both sides of the fingerprint module.
12. electronic equipment according to claim 11, it is characterised in that at least one side of the cover plate is provided with groove, and
The groove corresponds to the position of the fingerprint module；
The cover plate is provided with through hole, and the through hole corresponds to the position of the fingerprint module.
13. electronic equipment according to claim 8, it is characterised in that the electronic equipment includes aobvious with touch function
Show component, the display module also includes display screen and touch sensor；The display location is in the cover plate and the pressure drag
Between formula sensor；The touch sensor is located between cover plate and the display screen, or the touch sensor is integrated in
Inside the display screen；
Or, the touch sensor is located between the cover plate and the piezoresistive transducer；The display screen is fixed on institute
State piezoresistive transducer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720124206.4U CN206523863U (en) | 2017-02-10 | 2017-02-10 | Piezoresistive transducer, pressure-detecting device, electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720124206.4U CN206523863U (en) | 2017-02-10 | 2017-02-10 | Piezoresistive transducer, pressure-detecting device, electronic equipment |
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| CN206523863U true CN206523863U (en) | 2017-09-26 |
Family
ID=59890497
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| CN201720124206.4U Active CN206523863U (en) | 2017-02-10 | 2017-02-10 | Piezoresistive transducer, pressure-detecting device, electronic equipment |
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| CN107658319A (en) * | 2017-09-28 | 2018-02-02 | 厦门天马微电子有限公司 | Display panel and display device |
| CN107797706A (en) * | 2017-11-03 | 2018-03-13 | 厦门天马微电子有限公司 | A kind of pressure sensitive sensor, display panel and device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107658319A (en) * | 2017-09-28 | 2018-02-02 | 厦门天马微电子有限公司 | Display panel and display device |
| CN107658319B (en) * | 2017-09-28 | 2020-02-11 | 厦门天马微电子有限公司 | Display panel and display device |
| CN107797706A (en) * | 2017-11-03 | 2018-03-13 | 厦门天马微电子有限公司 | A kind of pressure sensitive sensor, display panel and device |
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| CN108983119A (en) * | 2018-02-12 | 2018-12-11 | 黑龙江大学 | A kind of single-chip integration two-dimensional magnetic vector sensor and its integrated manufacture craft |
| CN108981506A (en) * | 2018-07-26 | 2018-12-11 | 北京机械设备研究所 | A kind of miniature surface-mount type firing resistor and preparation method thereof |
| CN109764994A (en) * | 2019-03-06 | 2019-05-17 | 南京林业大学 | A kind of finger pressure detection device networked |
| CN109764994B (en) * | 2019-03-06 | 2024-01-26 | 南京林业大学 | Finger pressure detection device capable of networking |
| CN109883316A (en) * | 2019-03-22 | 2019-06-14 | 中国科学院力学研究所 | A kind of resistance strain and strain measurement method |
| CN109883316B (en) * | 2019-03-22 | 2021-01-29 | 中国科学院力学研究所 | Resistance type strain sensor and strain measurement method |
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