CN108235748A - Piezoresistive transducer, pressure-detecting device, electronic equipment - Google Patents
Piezoresistive transducer, pressure-detecting device, electronic equipment Download PDFInfo
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- CN108235748A CN108235748A CN201780002813.6A CN201780002813A CN108235748A CN 108235748 A CN108235748 A CN 108235748A CN 201780002813 A CN201780002813 A CN 201780002813A CN 108235748 A CN108235748 A CN 108235748A
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- piezoresistive transducer
- substrate
- resistive layer
- electronic equipment
- resistance
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0414—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/045—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
A kind of piezoresistive transducer, pressure-detecting device and electronic equipment belong to electronic technology apparatus field.Piezoresistive transducer includes substrate (12) and semibridge system pressure drag sensing unit；Semibridge system pressure drag sensing unit includes two bridge arms (6,7), two bridge arm (6,7) series connection；Draw signal acquisition terminal (IN) in the connecting pin of two bridge arms (6,7)；Pumping signal is drawn respectively and applies end in the open end of two bridge arms (6,7)；Each bridge arm (6,7) includes at least one resistance unit (101,102,103,104), resistance unit (101,102,103,104) on substrate (12), two bridge arms (6,7) resistance unit (101 included, 102,103,104) quantity is identical.This makes piezoresistive transducer that can inhibit temperature drift, and increase semaphore when realizing pressure detecting function, and to the internal space requirements of entire electronic equipment than relatively low, use easy to spread.
Description
Technical field
The present invention relates to electronic technology apparatus field, more particularly to a kind of piezoresistive transducer, pressure-detecting device, electronics
Equipment.
Background technology
In the prior art, the pressure detecting scheme of electronic equipment, is mainly based upon what capacitance sensor was detected.Such as figure
Shown in 1, the principle of this scheme is by cover clamp 2 using finger 1.The pressure that finger 1 applies is transmitted to capacitance by cover board 2 and passes
On first pole plate 41 of sensor 4.Spacing between first pole plate 41 and the second pole plate 42 occurs for 41 stress deformation of the first pole plate
Change.So as to which the size of the capacitance of capacitance sensor 4 changes, therefore the detection of pressure can be realized according to above-mentioned principle.
But inventor is in the implementation of the present invention, and following technical problem exists in the prior art：Based on electricity
Hold sensor to be detected pressure, the first pole plate 41 and the second pole plate 42 for needing capacitance sensor 4 are oppositely arranged.First pole
Plate 41 needs to be bonded on cover board 2 by adhesive glue 3.Second pole plate 42 is bonded in by adhesive glue 3 on loading plate 5.But this
Kind design method is higher to the internal space requirements of entire electronic equipment, and to the first pole plate 41, the second pole plate 42, cover board
2 and the cooperation of loading plate 5, allowance control, assembling, manufacture test etc. all have higher requirements.
Invention content
The embodiment of the present invention is designed to provide a kind of piezoresistive transducer, pressure-detecting device, electronic equipment so that
Piezoresistive transducer can inhibit temperature drift when realizing pressure detecting function, increase semaphore and entire electronics is set
Standby internal space requirements are than relatively low, use easy to spread.
In order to solve the above technical problems, an embodiment of the present invention provides a kind of piezoresistive transducer, including substrate and half-bridge
Formula pressure drag sensing unit；Semibridge system pressure drag sensing unit includes two bridge arms, two bridge arm series connection；Wherein, the company of two bridge arms
It connects end and draws signal acquisition terminal；Pumping signal is drawn respectively and applies end in the open end of two bridge arms；Each bridge arm is included at least
One resistance unit, resistance unit are located on substrate, wherein, the quantity of resistance unit that two bridge arms include is identical.
The embodiment of the present invention additionally provides a kind of pressure-detecting device, including above-mentioned piezoresistive transducer and processor, pressure
Resistive sensor, for receiving pressure；Processor, it is described to obtain for being handled the signal that piezoresistive transducer exports
The pressure information of pressure.
The embodiment of the present invention additionally provides a kind of electronic equipment, including above-mentioned pressure-detecting device.
The embodiment of the present invention in terms of existing technologies, includes substrate by piezoresistive transducer and semibridge system pressure drag passes
Feel the design of unit so that piezoresistive transducer can inhibit temperature drift when realizing pressure detecting function, can also increase
Semaphore.Also, the detection of pressure is realized using piezoresistive transducer, it is to be detected only need to piezoresistive transducer to be arranged in some
On stress surface.Piezoresistive transducer stress generates deformation, and respective change occurs so as to the resistance value of piezoresistive transducer.It can be with
Avoid the structure design of capacitance type sensor pole plate.It is easy to spread to make to the internal space requirements of entire electronic equipment than relatively low
With.And the assembling mode that piezoresistive transducer is assembled into electronic equipment is relatively simple, helps to melt piezoresistive transducer
It closes on all parts of electronic equipment to realize various abundant applications.
In addition, semibridge system pressure drag sensing unit is two, respectively the first semibridge system pressure drag sensing unit and the second half-bridge
Formula pressure drag sensing unit；The pumping signal of the first semibridge system pressure drag sensing unit applies end and the second semibridge system pressure drag
The pumping signal of sensing unit applies end electrical connection.
In addition, the first semibridge system pressure drag sensing unit and the second semibridge system pressure drag sensing unit include two resistance lists
Member, the wherein one side of substrate are laid out two resistance units, and the another side of substrate is laid out two resistance units.
In addition, substrate at least two；Resistance unit is both provided on each substrate.
In addition, resistance unit includes resistive layer and two lead terminals；Two lead terminals and the resistive layer by with
Lower technique attachment is on the substrate：By the coating of described two lead terminal compartment of terrain on the substrate, by the resistive layer
On the substrate, and the resistive layer is positioned at described two lead terminals between for coating, wherein, the resistive layer both ends are distinguished
It extends on described two lead terminals, insulating layer coating is applied above the resistive layer and the lead terminal, so that insulating layer
Cover resistive layer and lead terminal；Alternatively, by resistive layer coating on the substrate, described two lead terminals are distinguished
Coating on the substrate, and is located at the both ends of the resistive layer, wherein, described two lead terminals extend respectively to the electricity
In resistance layer, insulating layer coating is applied above the resistive layer and the lead terminal, so that insulating layer covering resistive layer and lead end
Son；Alternatively, the resistive layer and described two lead terminals are respectively coated on the substrate, and described two lead terminals
Positioned at the both ends of the resistive layer, wherein, described two lead terminals are hard lead terminal, in the resistive layer and described
The adjacent top coating silver paste of lead terminal, applies insulating layer coating, so that insulating layer above resistive layer, lead terminal and silver paste
Cover resistive layer, lead terminal and silver paste.
In addition, the shape of resistive layer is rectangle, snakelike or back-shaped.
In addition, pressure-detecting device further includes cover board；The cover board is covered on the piezoresistive transducer, and pressure resistance type passes
Sensor fits in cover board by adhesive glue；The cover board, for receiving pressure and passing the pressure conduction to the pressure resistance type
Sensor.
In addition, electronic equipment includes side key component, each side key component includes a piezoresistive transducer.
Protrusion buckle is equipped in addition, side key component at least two, between adjacent piezoresistive transducer, protrusion buckle
Highly it is more than the height of the piezoresistive transducer.
In addition, electronic equipment includes the fingerprint recognition button assembly with pressure detecting function, fingerprint recognition button assembly
Including fingerprint module and piezoresistive transducer, the piezoresistive transducer is two；The fingerprint module is set to the cover board
Inside, and two piezoresistive transducers are located at the both sides of the fingerprint module respectively.
In addition, electronic equipment includes the display module with touch function, the display module further includes display screen and touch
Sensor；The display location is between the cover board and the piezoresistive transducer；The touch sensor be located at cover board and
Between the display screen or the touch sensor is integrated in inside the display screen, wherein, the piezoresistive transducer is
Transparent material；Alternatively, the touch sensor is between cover board and the piezoresistive transducer；The display screen is fixed on institute
Piezoresistive transducer is stated, wherein, the piezoresistive transducer is transparent material.
Description of the drawings
One or more embodiments are illustrated by the picture in corresponding attached drawing, these exemplary theorys
The bright restriction not formed to embodiment, the element for having same reference numbers label in attached drawing are expressed as similar element, remove
Non- have a special statement, and composition does not limit the figure in attached drawing.
Fig. 1 is the structure diagram of the pressure detecting scheme of electronic equipment in the prior art；
Fig. 2 is the half-bridge topology schematic diagram of middle piezoresistive transducer according to first embodiment；
Fig. 3 is the half-bridge application principle circuit diagram of middle piezoresistive transducer according to first embodiment；
Fig. 4 is the full-bridge topologies schematic diagram of middle piezoresistive transducer according to first embodiment；
Fig. 5 is the equivalent resistance schematic diagram of middle full-bridge topologies according to first embodiment；
Fig. 6 is the full-bridge application principle circuit diagram of middle piezoresistive transducer according to first embodiment；
Fig. 7 is first layout type schematic diagram of the resistance unit on substrate in an embodiment；
Fig. 8 is second layout type schematic diagram of the resistance unit on substrate in an embodiment；
Fig. 9 is third layout type schematic diagram of the resistance unit on substrate in an embodiment；
Figure 10 be according to first embodiment in the piezoresistive transducer that is made of two resistance units of each bridge arm it is complete
Bridge topological structure schematic diagram；
Figure 11 be in an embodiment resistance unit scattered distribution in the first layout type schematic diagram on substrate two sides；
Figure 12 be in an embodiment resistance unit scattered distribution in the second layout type schematic diagram on substrate two sides；
Figure 13 be in an embodiment resistance unit scattered distribution in the third layout type schematic diagram on substrate two sides；
Figure 14 is second layout type schematic diagram of the resistance unit scattered distribution on two substrates in an embodiment；
Figure 15 is third layout type schematic diagram of the resistance unit scattered distribution on two substrates in an embodiment；
Figure 16 is the structure diagram of rectangle piezoresistive transducer in an embodiment；
Figure 17 is the structure diagram of the piezoresistive transducer of middle serpentine resistive layer according to first embodiment；
Figure 18 be according to first embodiment in back-shaped resistive layer piezoresistive transducer structure diagram；
Figure 19 is the sectional view of the piezoresistive transducer formed in an embodiment by the first processing technology；
Figure 20 is the sectional view of the piezoresistive transducer formed in an embodiment by the second processing technology；
Figure 21 is the sectional view of the piezoresistive transducer formed in an embodiment by third processing technology；
Figure 22 is the sectional view according to keyboard in third embodiment；
Figure 23 is the structure diagram according to mouse in third embodiment；
Figure 24 is according to virtual key laminated construction schematic diagram in third embodiment；
Figure 25 is according to virtual key sectional view in third embodiment；
Figure 26 is according to virtual key force analysis figure in third embodiment；
Figure 27 is according to the side key component structure diagram in third embodiment with keypress function；
Figure 28 is that there are two the side key component structure diagrams of keypress function according to tool in third embodiment；
Figure 29 is that there are two the section views of the fingerprint recognition button assembly of piezoresistive transducer according to tool in third embodiment
Figure；
Figure 30 is according to the sectional view for having reeded fingerprint recognition component above third embodiment cover plate；
Figure 31 is the section view for the fingerprint recognition button assembly that groove is respectively provided with according to third embodiment cover plate top and bottom
Figure；
Figure 32 is the sectional view for the fingerprint recognition button assembly for having through-hole according to third embodiment cover plate；
Figure 33 is that there are one the section views of the fingerprint recognition button assembly of piezoresistive transducer according to tool in third embodiment
Figure；
Figure 34 is that there are two the sectional views of the fingerprint recognition button assembly of pad according to band in third embodiment；
Figure 35 is that there are one the sectional views of the fingerprint recognition button assembly of pad according to band in third embodiment；
Figure 36 is cutd open according to display module of the touch sensor between cover board and display screen in third embodiment
View；
Figure 37 is the sectional view that the display module inside display screen is integrated according to touch sensor in third embodiment；
Figure 38 is the display group between cover board and piezoresistive transducer according to touch sensor in third embodiment
The sectional view of part；
Figure 39 is according to electronic equipment sectional view in third embodiment.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to each reality of the present invention
The mode of applying is explained in detail.However, it will be understood by those skilled in the art that in each embodiment of the present invention,
In order to make the reader understand this application better, many technical details are proposed.But even if without these technical details and base
In the various changes and modifications of following embodiment, the application technical solution claimed can also be realized.
The first embodiment of the present invention is related to a kind of piezoresistive transducers.As shown in Figure 1, piezoresistive transducer includes base
Plate and semibridge system pressure drag sensing unit.Semibridge system pressure drag sensing unit can inhibit temperature to float when realizing pressure detecting function
It moves, semaphore can also be increased.Semibridge system pressure drag sensing unit includes two bridge arms, two bridge arm series connection；Wherein, two bridge arms
Connecting pin draw signal acquisition terminal；Pumping signal is drawn respectively and applies end in the open end of two bridge arms；Each bridge arm includes
At least one resistance unit, resistance unit are located on substrate, wherein, the quantity of resistance unit that two bridge arms include is identical.
It should be noted that pumping signal applies end for applying high level or low level.Specifically, as shown in Fig. 2,
Draw signal acquisition terminal IN in the connecting pin of two bridge arms.Two bridge arms are the first bridge arm 6 and the second bridge arm 7 respectively.First bridge arm 6
Open end draw pumping signal apply end for apply high level (can the open end of the first bridge arm 6 apply voltage
VDD).The pumping signal that the open end of second bridge arm 7 is drawn applies end, and for applying low level, (i.e. the open end of the second bridge arm can
To be grounded GND).Substrate can be, but not limited to as printing board PCB plate.The material of substrate can be, but not limited to for：Polyamides is sub-
Amine PI materials, polyester resin PET material, glass or polymetylmethacrylate material.As shown in figure 3, it is worth mentioning
, piezoresistive transducer is half-bridge topology cellular construction.In order to be distinguished with full-bridge type piezoresistive transducer.Piezoresistive transducer
It is properly termed as half-bridge piezoresistive transducer.Half-bridge piezoresistive transducer 10 accesses detection chip 8, and detection chip 8 accesses master control core
Piece 9.Specifically, the signal acquisition terminal IN of half-bridge piezoresistive transducer 10 accesses prime by multiplexer switch unit 801
Amplifier unit 803 using analog to digital conversion circuit unit 804, accesses to processor unit 805, and processor unit 805 accesses
To main control chip 9.The pumping signal of half-bridge piezoresistive transducer 10 applies end and accesses to pumping signal circuit unit 802, by swashing
It encourages signal circuit unit 802 and applies voltage for half-bridge piezoresistive transducer 10.Pumping signal circuit unit 802 accesses to processor
Unit 805.When there is pressure to be applied on piezoresistive transducer, the size of the resistance of the resistance of the first bridge arm 6 and the second bridge arm 7
It can change, the dividing ratios of the resistance of the first bridge arm 6 and the resistance of the second bridge arm 7 can be influenced, so as to influence signal acquisition
Hold the signal magnitude of IN.Detection chip 8 calculates the size of pressure by detecting the signal intensity of signal acquisition terminal IN.And working as has
When temperature influences, the resistance value drift that the resistance of the resistance of the first bridge arm 6 and the second bridge arm 7 is affected by temperature generation is close,
The dividing ratios of IN points are held essentially constant, so the signal intensity influence that temperature drift is brought to IN signaling points is limited, so
The influence of temperature drift can be inhibited.
In addition, in order to further suppress temperature drift, semibridge system pressure drag sensing unit is two, respectively the first semibridge system pressure drag
Sensing unit and the second semibridge system pressure drag sensing unit；The pumping signal of first semibridge system pressure drag sensing unit applies end and second
The pumping signal of semibridge system pressure drag sensing unit applies end electrical connection.Specifically, the signal of the first half-bridge applies end and second
The signal of half-bridge applies end connection.The ground terminal of the ground terminal of first half-bridge and the second half-bridge connects.First half-bridge and the second half
The signal acquisition terminal of bridge can be respectively connected to control circuit.As shown in figure 4, two half-bridge parallel connections are stitched together composition entirely
Bridge topological structure.Resistance unit is four, is first resistor unit 101, second resistance unit 102,3rd resistor unit respectively
103 and the 4th full-bridge topologies for being formed of resistance unit 104, equivalent circuit is as shown in Figure 5.First resistor unit 101,
Second resistance unit 102,3rd resistor unit 103 and the 4th resistance unit 104, which are distinguished, equivalent corresponds to first resistor R1, the
Two resistance R2,3rd resistor R3 and the 4th resistance R4.First resistor R1, second resistance R2, the electricity of 3rd resistor R3 and the 4th
Resistance R4 is four bridge arms of full-bridge topologies respectively.There are four lead ends for this electric bridge topology unit.Wherein opposite two draw
Line end is respectively connected to pumping signal VDD and systematically GND.Other two is signal acquisition terminal, respectively IN+ and IN-.IN+ with
The two differential signal input connecting detection chips of IN-.When there is pressure to be applied to piezoresistive transducer, R1 and R2 can be influenced
Dividing ratios, influence the dividing ratios of R3 and R4.The two influence ratio is inconsistent, so as to influence the difference between IN+ and IN-
Signal magnitude.And when having temperature influence, R1 and R2, the resistance value drift that two groups of resistance of R3 and R4 are affected by temperature generation connect
Closely.IN+ ends and the impacted dividing ratios at IN- ends are not affected by temperature substantially.Difference letter so between IN+ and IN-
Number size influences faint, and the signal of chip detection is largely the hardware topology knot since useful signal caused by pressing changes
The influence of temperature drift is inhibited on structure.It is noted that piezoresistive transducer is full-bridge topology cellular construction, can be referred to as
For full-bridge piezoresistive transducer.As shown in fig. 6, in practical application, full-bridge piezoresistive transducer 11 is connect by detection chip 8
Enter main control chip 9.Specifically, the IN+ and IN- of full-bridge piezoresistive transducer 11 pass through multiplexer switch unit 801 respectively
Pre-amplifier unit 803 is accessed, using analog to digital conversion circuit unit 804, accesses to processor unit 805, processor list
Member 805 accesses to main control chip 9.IN+ is connected into different sense channels from IN- respectively, helps to improve detection speed.Also may be used
By using two sense channels using poll in a manner of to each full-bridge piezoresistive transducer 11 for forming full-bridge topology unit into
Capable sample detecting one by one.
It should be noted that resistance unit can be located at substrate side by side.As shown in fig. 7, for full-bridge piezoresistive transducer
It illustrates, resistance unit can be four, be located at substrate 12 side by side.Four resistance units are located at substrate 12 side by side.With diagram
It is illustrated for direction.It is first resistor unit, second resistance unit, 3rd resistor unit and successively from left to right
Four resistance units.Terminal is IN+, IN+, IN-, IN- successively from left to right above four resistance units.Four resistance units
Terminal is VDD, GND, VDD, GND successively from left to right below.As shown in figure 8, four resistance units can also be as follows
Alignment placement is in substrate 12.Terminal is IN-, IN+, IN+, IN- successively from left to right above four resistance units.Four resistance
Terminal is VDD, GND, VDD, GND successively from left to right below unit.As shown in figure 9, four resistance units can also be with such as
Under type alignment placement is in substrate 12.Terminal is IN+, IN-, IN+, IN- successively from left to right above four resistance units.Four
Terminal is GND, VDD, VDD, GND etc. successively from left to right below a resistance unit.It is not listed here.
As shown in Figure 10, each bridge arm of full-bridge can be composed in series by two resistance units.It is it is noted that each
Bridge arm is not limited to be composed in series by two resistance units.It can also be that three resistance units are composed in series, can also be four electricity
Resistance unit is composed in series, no longer enumerated here.Also, in practical application, in the situation that the resistance value of resistance unit allows
Under, each bridge arm can also be that two resistance units compose in parallel.
In present embodiment, resistance unit scattered distribution contributes to promote the inspection under similary deformation effect on the two sides of substrate
Survey semaphore.Specifically, when resistance unit forms full-bridge topologies, by resistance unit scattered distribution the two of substrate
Face can obtain the differential signal variable quantity of bigger in identical power.It illustrates by Fig. 5, if R1 and R2 is designed same
One level, when in same deformation effect to the two, the variation that they are generated can be more approximate.So cause point at IN+
The variation of pressure ratio example is smaller, and the semaphore of generation is smaller, and similarly the signal at IN- is also such.And if R1 and R2 is designed not
In same level, for same deformation effect when on two divider resistances, the variation of R1 is with the variation of R2 due in difference
Level, variation increase.So as to influence to increase on the dividing ratios at IN+, reach the effect of promotion signal variable quantity
Fruit.Similarly signal is in different levels due to R3 and R4 at IN-, also functions to the effect for increasing change amount signal.But IN+ with
Signal at IN- is if both the same ratio increases, differential signal between that IN+ and IN- or faint.Though for example,
Right R1 and R2 is in different layers, and R3 and R4 is in different layers；However R1 and R3, in same layer, R2 and R4 is in same layer.In this design
Single half-bridge sees that signal is to increase, but the differential signal between the IN+ and IN- between two half-bridges is again without increasing
's.So full-bridge topology at this time is also needed to R1 and the design of this pair of horns bridge arm of R4 in same layer, this pair of of bridge of R3 and R2
Arm designs the differential signal that in same layer, can be realized and be increased between IN+ and IN- in this way.If only half-bridge topology, then two
A resistance unit is in different levels and is conducive to increase inspection signal.If full-bridge topology, then two in each half-bridge
A resistance unit should be in different levels, and diagonal resistance unit should be in same level.As shown in figure 11, preferably
Layout type is laid out two resistance units for the wherein one side of substrate 12.The another side of substrate 12 is laid out two resistance units.Tool
For body, illustrated for illustrating direction：101 and the 4th resistance unit 104 of first resistor unit is located at the upper of substrate 12
Surface.Second resistance unit 102 and 3rd resistor unit 103 are located at the lower surface of substrate 12.And second resistance unit 102 and
Three resistance units 103 are located between 101 and the 4th resistance unit 104 of first resistor unit.Alternatively, as shown in figure 12, the first electricity
Resistance 101 and the 4th resistance unit 104 of unit is located at the upper surface of substrate 12, and positioned at the right part of substrate 12.Second resistance
Unit 102 and 3rd resistor unit 103 are located at the lower surface of substrate 12, and positioned at the left part of substrate 12.Alternatively, such as Figure 13
Shown, second resistance unit 102 and 3rd resistor unit 103 are located at the upper surface of substrate 12, and are located at the left side of substrate 12
Point.101 and the 4th resistance unit 104 of first resistor unit is located at the lower surface of substrate 12, and positioned at the right part of substrate 12
Deng.It is not listed here.What deserves to be explained is in present embodiment to resistance unit substrate 12 per one side specific location and
Specific number, is not limited.
In practical design process, substrate can be designed as at least two；The electricity is both provided on each substrate
Hinder unit.As shown in figure 14, it is illustrated so that substrate is two as an example：Two substrates are first substrate 121, second substrate respectively
122.Two resistance units are laid out on first substrate 121.Two resistance units are laid out on second substrate 122.First substrate 121 is not
With resistance unit with second substrate 122 with resistance unit while be oppositely arranged.Also, first substrate 121 is logical
Adhesive glue 13 is crossed to fix with the resistance unit on second substrate 122.As shown in figure 15, two resistance are laid out on first substrate 121
Unit.Two resistance units are laid out on second substrate 122.First substrate 121 has the one side of resistance unit and second substrate 122
Being oppositely arranged on one side with resistance unit.Also, the resistance on the resistance unit and second substrate 122 on first substrate 121
Unit is separately fixed at the two sides of adhesive glue 13.
It should be noted that resistance unit includes resistive layer and two lead terminals.Resistive layer can be, but not limited to as carbon
Or graphene.The material of two lead terminals can be, but not limited to as copper or silver paste.It should also be noted that, the length of resistive layer
Degree, width, thickness shadow can ring the resistance value of pressure-sensitive resistance unit.It can be obtained by adjusting the length of resistive layer, width, thickness
It is adapted to the piezoresistive transducer of the resistance value parameter area of detection chip circuit.In practical application, resistance unit 14 passes through inspection
It surveys chip 8 and accesses main control chip 9.Pumping signal unit 802 applies pumping signal for resistance unit 14.Inside detection chip 8
Multiple processing units sample resistance unit 14.Can detection resistance unit 14 in real time change in resistance, by the mould of resistance value
Intend signal intensity and be converted to digital signal, then main control chip 9 is reported to after obtaining corresponding pressure value size by calculation process.
Main control chip 9 compares after receiving pressure information with predetermined threshold value, then makes corresponding utility command processing.Wherein, resistive layer
15 shape can be, but not limited to as rectangle as shown in figure 16；As shown in figure 17 is snakelike；Alternatively, as shown in figure 18 is back-shaped
Etc..
First, two lead terminals and resistive layer are attached to by following technique on substrate：
As shown in figure 19, by two 16 compartment of terrain of lead terminal coatings on the substrate 12.Resistive layer 15 is coated in substrate
On 12, and between two lead terminals 16.Wherein, 15 both ends of resistive layer are extended respectively on two lead terminals 16, are had
Help ensure that lead terminal 16 comes into full contact with conducting with resistive layer 15.Insulating layer coating is applied above resistive layer 15 and lead terminal 16
17, so that insulating layer 17 covers resistive layer 15 and lead terminal 16.It is to protect two lead terminals 16 to apply insulating layer coating 17
It is not oxidized with resistive layer 15.
2nd, two lead terminals and resistive layer are attached to by following technique on substrate：
As shown in figure 20, resistive layer 15 is coated on the substrate 12.Two lead terminals 16 are respectively coated on substrate 12
On, and positioned at the both ends of resistive layer 15.Wherein, two lead terminals 16 are extended respectively on resistive layer 15, are helped to ensure that and are drawn
Line terminals 16 come into full contact with conducting with resistive layer 15.Insulating layer coating 17 is applied above resistive layer 15 and lead terminal 16, so that absolutely
Edge layer 17 covers resistive layer 15 and lead terminal 16.It is to protect two lead terminals 16 and resistive layer 15 to apply insulating layer coating 17
It is not oxidized.
3rd, two lead terminals and resistive layer are attached to by following technique on substrate：
As shown in figure 21, resistive layer 15 and described two lead terminals 16 are respectively coated on the substrate 12, and two are drawn
Line terminals 16 are located at the both ends of resistive layer 15.Wherein, two lead terminals 16 are hard lead terminal.In resistive layer 15 and draw
The adjacent top coating silver paste 18 of line terminals 16, helps to ensure that lead terminal 16 comes into full contact with conducting with resistive layer 15.In electricity
Resistance layer 15, lead terminal 16 and 18 top of silver paste apply insulating layer coating 17, so that insulating layer 17 covers resistive layer 15, lead terminal
16 and silver paste 18.It is to protect two lead terminals 16 and resistive layer 15 not oxidized to apply insulating layer coating 17.
Through the above, it is not difficult to find that present embodiment includes substrate and semibridge system pressure drag by piezoresistive transducer
The design of sensing unit so that piezoresistive transducer can inhibit temperature drift when realizing pressure detecting function, can also increase
Plus signal amount.Also, present embodiment can be to avoid the structure design of capacitance type sensor pole plate.To in entire electronic equipment
Portion's space requirement is than relatively low, use easy to spread.The assembling mode that piezoresistive transducer is assembled into electronic equipment is relatively simple,
Help that piezoresistive transducer is fused on all parts of electronic equipment to realize various abundant applications.
Second embodiment of the present invention is related to a kind of pressure-detecting device, the pressure resistance type sensing including first embodiment
Device and processor；Piezoresistive transducer, for receiving pressure；Processor, the signal for being exported to piezoresistive transducer carry out
It handles to obtain the pressure information of the pressure.
Third embodiment of the present invention is related to a kind of electronic equipment with pressure detecting function, including the second embodiment party
The pressure-detecting device of formula.
In practical application, pressure-detecting device further includes cover board.Cover board is covered on piezoresistive transducer, pressure resistance type
Sensor fits in cover board by adhesive glue.Cover board, for receiving pressure and by pressure conduction to the piezoresistive transducer.Its
In, piezoresistive transducer can fit in cover board by adhesive glue.
As shown in figure 22, electronic equipment can include keyboard, and keyboard has pressure detecting function.It is printed on cover board 19 several
Keypad character.Specifically, the one side that cover board 19 is not printed on keypad character is fitted with piezoresistive transducer by adhesive glue 13.Often
A keypad character covers at least one piezoresistive transducer 20.
As shown in figure 23, electronic equipment can include being mouse, and mouse has pressure detecting function.Cover board 19 is left for mouse
The corresponding shell 191 of key shell 192 corresponding with right mouse button region.
In practical application, as shown in figures 24 and 25, electronic equipment can also include button assembly, button assembly tool
There is pressure detecting function.Button assembly can be virtual key.Preferably, button assembly further includes touch sensor 21；It touches
It touches sensor 21 and is located at 19 lower section of cover board.It is noted that cover board can be display area at this time.It can also be display area
The key area of lower section.It can be in the arranged beneath piezoresistive transducer 22 of electronic equipment virtual key, that is, cover board 19.Also, in
In practical application, there is display screen 23 between cover board 19 and piezoresistive transducer 22.The function of such button assembly is able to
It is abundant, it can not only identify touch, can also identify pressure, it is thus possible to which the operation to button assembly provides more answer
With.For example, being more than a certain given threshold with 1 pressing keys of finger, then corresponding set-up function is responded.Such as：Exhalation voice assistant,
Function of search or pattern switching etc..Touch sensor 21 is attached with by adhesive glue 13 below cover board 19.Alternatively, in cover board
19 lower sections are attached with display screen 23 by adhesive glue 13, and the lower section of display screen 23 is fixed with piezoresistive transducer 22.Although in hand
Refer to and there was only touch sensor 21 below the A of pressing area, there is no arrange piezoresistive transducer 22.But as shown in Figure 26, according to
Structural mechanics deformation principle, when finger 1 is pressed on stress 19 fringe region of cover board supported by fulcrum B, not only finger is pressed
The reclinate deformation of intermediate pressure section A.Also there is deformation in non-pushed region.Such as the deformation of the dotted line in Figure 28 to solid line position.So as to
It can be made using this mechanical characteristic using design.Since when finger 1 is pressed into finger pressing area A, the transmission of power makes
23 region of display screen is obtained also to deform upon.Accordingly it is also possible to it is pressed using the piezoresistive transducer 22 in 23 region of display screen to identify
Key pressure.
In addition, button assembly can also be the side key component of electronic equipment.As shown in figure 27, it is side switch group in button assembly
During part, cover board 19 is the side bound edge of electronic equipment.It is noted that the assembling of side bound edge can be metal or non-gold
Belong to material assembling or metal and the Hybrid assembling of nonmetallic materials.Piezoresistive transducer 22 is attached to side by adhesive glue 13
The inside on bread side.Side bound edge could be provided as convex form, it is ensured that finger pressing effect.As shown in figure 28, pressure drag
Formula sensor 22 at least two can be equipped with protrusion buckle 24 between adjacent piezoresistive transducer 22.Specifically, side switch
It may be two, such as power key and volume key.When side switch is power key and volume key, power key and volume key are all disposed with pressure
Resistive sensor 22.Two piezoresistive transducers 22 are the insides that side bound edge is attached to by adhesive glue 13.Wherein, it is raised
Buckle 24 can increase the intensity of cover board.It is noted that the both sides of piezoresistive transducer 22 are arranged with protrusion buckle 24.
Preferably, the height of protrusion buckle 24 is more than the height of piezoresistive transducer 22.Specifically, the height of protrusion buckle 24 is big
In the sum of thickness of piezoresistive transducer 22 and adhesive glue 13.Protrusion buckle 24 is equivalent to has multiple fulcrums to the hypothesis of bound edge 19,
Beam type framework is formed, the mechanics framework of similar Figure 28 can not only play the fastness for reinforcing bound edge, moreover it is possible to increase what is generated
Deformation quantity..
In addition, button assembly can also be fingerprint recognition button assembly, as shown in figure 29, piezoresistive transducer 22 is two
It is a.Fingerprint recognition button assembly further includes fingerprint module 25.Fingerprint module 25 is fixed on 19 inside of cover board, and two pressure drags
Formula sensor 22 is located at the both sides of fingerprint mould 25 respectively.It, as shown in figures 30 and 31, can in order to increase the sensitivity of fingerprint recognition
To be equipped with groove 26 in at least one side of cover board 19.And groove 26 corresponds to the position of fingerprint module 25.Specifically, can be
The upper surface of cover board 19 is equipped with groove 26；Alternatively, groove 26 can be equipped in the lower surface of cover board 19；Alternatively, it can also cover
The upper and lower surface of plate 19 is simultaneously equipped with groove 26；Alternatively, as shown in figure 32, cover board 19 is equipped with through-hole, and through-hole corresponds to fingerprint
The position of module 25.
In practical design process, as shown in figure 33, two piezoresistive transducers 22 are not limited to be located at fingerprint mould respectively
25 both sides.For example, fingerprint module 25 is fixed on 19 inside of cover board, and piezoresistive transducer 22 is fixed on finger by adhesive glue 13
Line module 25.It should be noted that as shown in figs. 34 and 35, piezoresistive transducer 22 can be, but not limited to through pad or
Person's glue, band calymma cotton etc. 27 is fixed on fingerprint module 25.It, can be in pressure drag in order to protect piezoresistive transducer 22 without damage
It is provided with salient point 28 on one side away from the pad on formula sensor 22.
Electronic equipment can also include the display module with touch function, and display module has pressure detecting function, display
Component further includes display screen and touch sensor.Display location is between cover board and piezoresistive transducer.Wherein, pressure resistance type senses
Device can be designed to transparent material.Specifically, as shown in figure 36, touch sensor 30 be located at cover board 19 and display screen 29 it
Between.Also, touch sensor 30 is fixed by adhesive glue 13 and 19 phase of cover board.Touch sensor 30 passes through adhesive glue 13 and display
It is mutually fixed between screen 29.As shown in figure 37, touch sensor is integrated in inside display screen 29.Cover board 19 and display screen 29 pass through viscous
13 phase of rubber alloy is fixed.Alternatively, as shown in figure 38, display module further includes display screen 29 and touch sensor 30.Touch sensor
30 between cover board 19 and piezoresistive transducer 22.Display screen 29 is fixed on piezoresistive transducer 22.Also, cover board 19 passes through
Adhesive glue 13 is fixed on touch sensor 30.Touch sensor 30 is fixed on piezoresistive transducer 22 by adhesive glue 13.Pressure drag
Formula sensor 22 is fixed on by adhesive glue 13 on display screen 29.
It is not difficult to find that present embodiment is corresponding with first embodiment, present embodiment can be mutual with first embodiment
Match implementation.The relevant technical details mentioned in first embodiment are still effective in the present embodiment, in order to reduce weight
Multiple, which is not described herein again.Correspondingly, the relevant technical details mentioned in present embodiment are also applicable in first embodiment
In.
Through the above, it is not difficult to find that present embodiment causes piezoresistive transducer when realizing pressure detecting function,
It can inhibit temperature drift.Also, present embodiment can be to avoid the structure design of capacitance type sensor pole plate.To entire electronics
The internal space requirements of equipment are than relatively low, use easy to spread.Piezoresistive transducer is assembled into the assembling mode of electronic equipment
It is relatively simple, help that piezoresistive transducer is fused on all parts of electronic equipment to realize various abundant applications.
Preferably, as shown in figure 39, electronic equipment can also include structural member 31.Pressure-detecting device is
Display module 32 with touch function.There is gap 33 between display module 32 and structural member 31.Wherein, it is filled between gap 33
Foam.It is noted that structural member 31 can be, but not limited to as center, rear shell, printed circuit board or battery.
Since first and second embodiment is corresponded with present embodiment, present embodiment can be implemented with first and second
Mode is worked in coordination implementation.The relevant technical details mentioned in first and second embodiment are still effective in the present embodiment,
The attainable technique effect of institute can similarly be realized in the present embodiment in first and second embodiment, in order to reduce repetition,
Which is not described herein again.Correspondingly, the relevant technical details mentioned in present embodiment are also applicable in first and second embodiment
In.
Through the above, it is not difficult to find that present embodiment causes piezoresistive transducer when realizing pressure detecting function,
It can inhibit temperature drift, increase semaphore.Also, present embodiment can set to avoid the structure of capacitance type sensor pole plate
Meter.To the internal space requirements of entire electronic equipment than relatively low, use easy to spread.Piezoresistive transducer is assembled into electronics to set
Standby assembling mode is relatively simple, helps piezoresistive transducer being fused on all parts of electronic equipment various to realize
Abundant application.
It will be understood by those skilled in the art that the respective embodiments described above are to realize specific embodiments of the present invention,
And in practical applications, can to it, various changes can be made in the form and details, without departing from the spirit and scope of the present invention.
Claims (14)
1. a kind of piezoresistive transducer, which is characterized in that including substrate and semibridge system pressure drag sensing unit；
The semibridge system pressure drag sensing unit includes two bridge arms, two bridge arm series connection；Wherein, the company of two bridge arms
It connects end and draws signal acquisition terminal；Pumping signal is drawn respectively and applies end in the open end of two bridge arms；
Each described bridge arm includes at least one resistance unit, and the resistance unit is located on the substrate, wherein, two institutes
The quantity for stating the resistance unit that bridge arm includes is identical.
2. piezoresistive transducer according to claim 1, which is characterized in that the semibridge system pressure drag sensing unit is two
It is a, respectively the first semibridge system pressure drag sensing unit and the second semibridge system pressure drag sensing unit；
The pumping signal of the first semibridge system pressure drag sensing unit applies end and the second semibridge system pressure drag sensing unit
Pumping signal applies end electrical connection.
3. piezoresistive transducer according to claim 2, which is characterized in that the first semibridge system pressure drag sensing unit and
Second semibridge system pressure drag sensing unit includes two resistance units, and the wherein one side of the substrate is laid out two resistance units,
The another side of the substrate is laid out two resistance units.
4. piezoresistive transducer as claimed in any of claims 1 to 3, which is characterized in that the substrate is at least
Two；
The resistance unit is both provided on each substrate.
5. piezoresistive transducer according to claim 1, which is characterized in that one resistance unit include resistive layer and
Two lead terminals；
Described two lead terminals and the resistive layer are adhered on the substrate by following technique：By described two lead ends
On the substrate, by resistive layer coating on the substrate, and the resistive layer is located at described two for sub- compartment of terrain coating
Between a lead terminal；Wherein, the resistive layer both ends are extended respectively on described two lead terminals, in the resistive layer and
Insulating layer coating is applied above the lead terminal, so that the insulating layer covers the resistive layer and the lead terminal；
Alternatively, by resistive layer coating on the substrate, described two lead terminals are respectively coated on the substrate,
And positioned at the both ends of the resistive layer；Wherein, described two lead terminals are extended respectively on the resistive layer, in the resistance
Insulating layer coating is applied above layer and the lead terminal, so that the insulating layer covers the resistive layer and the lead terminal；
Alternatively, the resistive layer and described two lead terminals are respectively coated on the substrate, and described two lead ends
Son is located at the both ends of the resistive layer；Wherein, described two lead terminals are hard lead terminal, in the resistive layer and institute
The adjacent top coating silver paste of lead terminal is stated, insulating layer coating is applied above the resistive layer, the lead terminal and silver paste,
So that the insulating layer covers the resistive layer, the lead terminal and silver paste.
6. piezoresistive transducer according to claim 5, which is characterized in that the shape of the resistive layer is rectangle, snakelike
It is or back-shaped.
7. a kind of pressure-detecting device, which is characterized in that including the pressure resistance type sensing described in any one in claim 1 to 6
Device and processor；
The piezoresistive transducer, for receiving pressure；
The processor, the signal for being exported to the piezoresistive transducer is handled to be believed with the pressure for obtaining the pressure
Breath.
8. a kind of electronic equipment with pressure detecting function, which is characterized in that including：Pressure detecting described in claim 7
Device.
9. electronic equipment according to claim 8, which is characterized in that the electronic equipment further includes cover board；
The cover board is covered on the piezoresistive transducer, and the piezoresistive transducer fits in the lid by adhesive glue
Plate；
The cover board, for receiving pressure and by the pressure conduction to the piezoresistive transducer.
10. electronic equipment according to claim 8, which is characterized in that the electronic equipment includes side key component, each
The side key component includes a piezoresistive transducer.
11. electronic equipment according to claim 10, which is characterized in that the side key component at least two is adjacent
Protrusion buckle is equipped between the piezoresistive transducer, the height of the protrusion buckle is more than the height of the piezoresistive transducer
Degree.
12. electronic equipment according to claim 8, which is characterized in that the electronic equipment includes having pressure detecting work(
The fingerprint recognition button assembly of energy, the fingerprint recognition button assembly include fingerprint module and piezoresistive transducer, the pressure drag
Formula sensor is two；The fingerprint module is set on the inside of the cover board, and two piezoresistive transducers are located at respectively
The both sides of the fingerprint module.
13. electronic equipment according to claim 12, which is characterized in that at least one side of the cover board is equipped with groove, and
The groove corresponds to the position of the fingerprint module；
The cover board is equipped with through-hole, and the through-hole corresponds to the position of the fingerprint module.
14. electronic equipment according to claim 8, which is characterized in that the electronic equipment includes aobvious with touch function
Show component, the display module further includes display screen and touch sensor；The display location is in the cover board and the pressure drag
Between formula sensor；The touch sensor is between cover board and the display screen or the touch sensor is integrated in
Inside the display screen；
Alternatively, the touch sensor is between the cover board and the piezoresistive transducer；The display screen is fixed on institute
State piezoresistive transducer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/073254 WO2018145304A1 (en) | 2017-02-10 | 2017-02-10 | Piezoresistive sensor, pressure measurement device and electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108235748A true CN108235748A (en) | 2018-06-29 |
| CN108235748B CN108235748B (en) | 2020-01-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780002813.6A Active CN108235748B (en) | 2017-02-10 | 2017-02-10 | Piezoresistive sensor, pressure detection device, and electronic apparatus |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108235748B (en) |
| WO (1) | WO2018145304A1 (en) |
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| CN111630485A (en) * | 2018-12-20 | 2020-09-04 | 深圳市汇顶科技股份有限公司 | Pressure detection data processing method, device and system and handheld device thereof |
| CN111998976A (en) * | 2020-08-07 | 2020-11-27 | 维沃移动通信有限公司 | Pressure sensor and electronic device |
| CN112860114A (en) * | 2021-02-24 | 2021-05-28 | 维沃移动通信有限公司 | Pressure-sensitive module and electronic equipment |
| CN113865757A (en) * | 2021-09-16 | 2021-12-31 | 歌尔微电子股份有限公司 | Detection circuit and detection method of piezoresistive pressure sensor and electronic equipment |
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Also Published As
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| CN108235748B (en) | 2020-01-03 |
| WO2018145304A1 (en) | 2018-08-16 |
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