CN206498085U - 10G minimizes the photo-detector assembling structure of EML lasers - Google Patents

10G minimizes the photo-detector assembling structure of EML lasers Download PDF

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Publication number
CN206498085U
CN206498085U CN201720202619.XU CN201720202619U CN206498085U CN 206498085 U CN206498085 U CN 206498085U CN 201720202619 U CN201720202619 U CN 201720202619U CN 206498085 U CN206498085 U CN 206498085U
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chip
detector
laser
photo
heat sink
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CN201720202619.XU
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张文臣
张彩
张亮
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Hidden Dragon Dalian Photoelectron Science And Technology Ltd
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Hidden Dragon Dalian Photoelectron Science And Technology Ltd
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Abstract

The utility model is related to fields of light devices, and in particular to a kind of photo-detector assembling structure being applied in 10G EML lasers.Propose the photo-detector assembling structure that a kind of 10G minimizes EML lasers, including silicon substrate, detector chip and heat sink, chip of laser is equipped with silicon substrate, open up fluted on silicon substrate at the position of chip of laser dead astern, detector chip is mounted on heat sink surface, detector chip after being bound through gold thread and it is heat sink be placed in groove, and be adhesively fixed with groove walls.The utility model compared with the existing technology, advantageously reduces cost, is more conducive to realize the automation package platforms that high-speed minimizes laser, greatly improves production efficiency.

Description

10G minimizes the photo-detector assembling structure of EML lasers
Technical field
The utility model is related to fields of light devices, and in particular to a kind of photo-detector being applied in 10G EML lasers Assembling structure.
Background technology
10G miniaturization electro-absorption modulation generating lasers are a photo elements for being specifically applied to long distance line data transfer Device, it is mainly comprising chip of laser, photo-detector, isolator, Dew Point, optical interface and with flexible circuit etc..Wherein, Photo-detector is as the primary clustering of laser, and its effect is that optical signal is converted into electric signal, passes through monitoring laser chip Luminous power, so as to detect its characteristic.There are positive entering light and the two kinds of photo-detector of side entering light in the market, the two Nearly 20 times of price difference, the price that photo-detector is entered in front is low, but there is chip of laser and front connects optical chip difference in height Problem, if connecing optical chip using front, traditional method is the certain thickness nitrogen that chip of laser is placed on an additional processing Change in Aluminum Heat Sink, make the centre-height of chip of laser consistent with the backlight chip centre-height that front connects light, so as to connect The backlight of chip of laser is received, so needs increase heat sink in design structure, accordingly adds heat load, power consumption also can phase It should increase.
Utility model content
The utility model in order to solve that existing photo-detector assembling structure is present it is not enough there is provided a kind of delicate structure, Effect is obvious, technique is simple, photo-detector assembling structure with low cost.
To achieve the above object, the technical solution adopted in the utility model is:Propose a kind of 10G miniaturizations EML laser The photo-detector assembling structure of device, including silicon substrate, detector chip and heat sink, are equipped with chip of laser on silicon substrate, swash Open up fluted on silicon substrate at the position of light device chip dead astern, detector chip is mounted on heat sink surface, is bound through gold thread Rear detector chip and it is heat sink be placed in groove, and be adhesively fixed with groove walls.
Angle between the detector chip and chip of laser is 6-8 °.
It is described it is heat sink for silicon substrate or nitridation aluminium material.
This paper presents a kind of inexpensive assembling structure of positive entering light photo-detector, grooving and it will visit on a silicon substrate Survey device chip and the heat sink alignment for being placed in groove, realizing chip of laser and detector chip so that behind chip of laser The light sent is just squeezed into monitoring back light chip, reaches optimum reception purpose, while detector chip putting position and laser Device chip can effectively prevent light reflection to, to light path impact, laser preferably being monitored so as to reach before laser into 6-8 ° of angle The purpose of chip power.The utility model do not increase chip of laser it is heat sink on the basis of, laser is matched by grooving The height of chip, realizes the application that inexpensive front connects optical chip.Compared with the existing technology, cost is advantageously reduced, is more had Help realize the automation package platforms that high-speed minimizes laser, greatly improve production efficiency.
Brief description of the drawings
Fig. 1 is detector chip and heat sink assembling schematic diagram;
Fig. 2 is the laser internal structure profile after the completion of photo-detector is assembled;
Fig. 3 is the laser internal structure top view after the completion of photo-detector is assembled.
Fig. 4 is the position relationship schematic diagram of chip of laser and detector chip;
In figure:1- is heat sink, 2- detector chips, 3- grooves, 4- chip of laser, 5- silicon substrates.
Embodiment
Below in conjunction with brief description of the drawings embodiment of the present utility model.
10G minimizes the photo-detector assembling structure of EML lasers, including silicon substrate 5, detector chip 2 and heat sink 1, It is equipped with silicon substrate on the silicon substrate at chip of laser 4, the dead astern position of chip of laser 4 and opens up fluted 3.Such as Fig. 1 Shown, detector chip 2 is mounted on heat sink 1 upper surface and carries out gold thread binding;As shown in Figure 2,3, the detector core after assembling Piece 2 and heat sink 1 it is put into the groove 3 of silicon substrate, is close to groove walls placement, and fixation is pasted in groove walls with conductive silver glue.
Wherein, it is heat sink to use silicon substrate or nitridation aluminium material.In the present embodiment, the size of groove is 0.35*0.6* 0.1mm, the size of groove can be also adjusted according to the actual requirements, and the depth of groove, which is set, to be needed to ensure behind chip of laser The light sent can be squeezed into just in monitoring back light chip, to reach optimum reception purpose, while detector chip putting position It is at an angle with chip of laser(See Fig. 4), α=6-8 °, α angles are optimal with 6 °, can effectively prevent light reflection to before laser to Light path impact, so as to reach the purpose of preferably monitoring chip of laser power.

Claims (3)

1.10G minimizes the photo-detector assembling structure of EML lasers, it is characterised in that:Including silicon substrate, detector chip and It is heat sink, it is equipped with silicon substrate on the silicon substrate at chip of laser, chip of laser dead astern position and opens up fluted, is detected Device chip attachment in heat sink surface, detector chip after being bound through gold thread and it is heat sink be placed in groove, it is and Nian Jie with groove walls It is fixed.
2. 10G according to claim 1 minimizes the photo-detector assembling structure of EML lasers, it is characterised in that:It is described Angle between detector chip and chip of laser is 6-8 °.
3. the 10G according to claim 1 or 2 minimizes the photo-detector assembling structure of EML lasers, it is characterised in that: It is described it is heat sink for silicon substrate or nitridation aluminium material.
CN201720202619.XU 2017-03-03 2017-03-03 10G minimizes the photo-detector assembling structure of EML lasers Active CN206498085U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720202619.XU CN206498085U (en) 2017-03-03 2017-03-03 10G minimizes the photo-detector assembling structure of EML lasers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720202619.XU CN206498085U (en) 2017-03-03 2017-03-03 10G minimizes the photo-detector assembling structure of EML lasers

Publications (1)

Publication Number Publication Date
CN206498085U true CN206498085U (en) 2017-09-15

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CN (1) CN206498085U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106785890A (en) * 2017-03-03 2017-05-31 大连藏龙光电子科技有限公司 10G minimizes the photo-detector assembling structure of EML lasers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106785890A (en) * 2017-03-03 2017-05-31 大连藏龙光电子科技有限公司 10G minimizes the photo-detector assembling structure of EML lasers

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