CN206498085U - 10G minimizes the photo-detector assembling structure of EML lasers - Google Patents
10G minimizes the photo-detector assembling structure of EML lasers Download PDFInfo
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- CN206498085U CN206498085U CN201720202619.XU CN201720202619U CN206498085U CN 206498085 U CN206498085 U CN 206498085U CN 201720202619 U CN201720202619 U CN 201720202619U CN 206498085 U CN206498085 U CN 206498085U
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Abstract
The utility model is related to fields of light devices, and in particular to a kind of photo-detector assembling structure being applied in 10G EML lasers.Propose the photo-detector assembling structure that a kind of 10G minimizes EML lasers, including silicon substrate, detector chip and heat sink, chip of laser is equipped with silicon substrate, open up fluted on silicon substrate at the position of chip of laser dead astern, detector chip is mounted on heat sink surface, detector chip after being bound through gold thread and it is heat sink be placed in groove, and be adhesively fixed with groove walls.The utility model compared with the existing technology, advantageously reduces cost, is more conducive to realize the automation package platforms that high-speed minimizes laser, greatly improves production efficiency.
Description
Technical field
The utility model is related to fields of light devices, and in particular to a kind of photo-detector being applied in 10G EML lasers
Assembling structure.
Background technology
10G miniaturization electro-absorption modulation generating lasers are a photo elements for being specifically applied to long distance line data transfer
Device, it is mainly comprising chip of laser, photo-detector, isolator, Dew Point, optical interface and with flexible circuit etc..Wherein,
Photo-detector is as the primary clustering of laser, and its effect is that optical signal is converted into electric signal, passes through monitoring laser chip
Luminous power, so as to detect its characteristic.There are positive entering light and the two kinds of photo-detector of side entering light in the market, the two
Nearly 20 times of price difference, the price that photo-detector is entered in front is low, but there is chip of laser and front connects optical chip difference in height
Problem, if connecing optical chip using front, traditional method is the certain thickness nitrogen that chip of laser is placed on an additional processing
Change in Aluminum Heat Sink, make the centre-height of chip of laser consistent with the backlight chip centre-height that front connects light, so as to connect
The backlight of chip of laser is received, so needs increase heat sink in design structure, accordingly adds heat load, power consumption also can phase
It should increase.
Utility model content
The utility model in order to solve that existing photo-detector assembling structure is present it is not enough there is provided a kind of delicate structure,
Effect is obvious, technique is simple, photo-detector assembling structure with low cost.
To achieve the above object, the technical solution adopted in the utility model is:Propose a kind of 10G miniaturizations EML laser
The photo-detector assembling structure of device, including silicon substrate, detector chip and heat sink, are equipped with chip of laser on silicon substrate, swash
Open up fluted on silicon substrate at the position of light device chip dead astern, detector chip is mounted on heat sink surface, is bound through gold thread
Rear detector chip and it is heat sink be placed in groove, and be adhesively fixed with groove walls.
Angle between the detector chip and chip of laser is 6-8 °.
It is described it is heat sink for silicon substrate or nitridation aluminium material.
This paper presents a kind of inexpensive assembling structure of positive entering light photo-detector, grooving and it will visit on a silicon substrate
Survey device chip and the heat sink alignment for being placed in groove, realizing chip of laser and detector chip so that behind chip of laser
The light sent is just squeezed into monitoring back light chip, reaches optimum reception purpose, while detector chip putting position and laser
Device chip can effectively prevent light reflection to, to light path impact, laser preferably being monitored so as to reach before laser into 6-8 ° of angle
The purpose of chip power.The utility model do not increase chip of laser it is heat sink on the basis of, laser is matched by grooving
The height of chip, realizes the application that inexpensive front connects optical chip.Compared with the existing technology, cost is advantageously reduced, is more had
Help realize the automation package platforms that high-speed minimizes laser, greatly improve production efficiency.
Brief description of the drawings
Fig. 1 is detector chip and heat sink assembling schematic diagram;
Fig. 2 is the laser internal structure profile after the completion of photo-detector is assembled;
Fig. 3 is the laser internal structure top view after the completion of photo-detector is assembled.
Fig. 4 is the position relationship schematic diagram of chip of laser and detector chip;
In figure:1- is heat sink, 2- detector chips, 3- grooves, 4- chip of laser, 5- silicon substrates.
Embodiment
Below in conjunction with brief description of the drawings embodiment of the present utility model.
10G minimizes the photo-detector assembling structure of EML lasers, including silicon substrate 5, detector chip 2 and heat sink 1,
It is equipped with silicon substrate on the silicon substrate at chip of laser 4, the dead astern position of chip of laser 4 and opens up fluted 3.Such as Fig. 1
Shown, detector chip 2 is mounted on heat sink 1 upper surface and carries out gold thread binding;As shown in Figure 2,3, the detector core after assembling
Piece 2 and heat sink 1 it is put into the groove 3 of silicon substrate, is close to groove walls placement, and fixation is pasted in groove walls with conductive silver glue.
Wherein, it is heat sink to use silicon substrate or nitridation aluminium material.In the present embodiment, the size of groove is 0.35*0.6*
0.1mm, the size of groove can be also adjusted according to the actual requirements, and the depth of groove, which is set, to be needed to ensure behind chip of laser
The light sent can be squeezed into just in monitoring back light chip, to reach optimum reception purpose, while detector chip putting position
It is at an angle with chip of laser(See Fig. 4), α=6-8 °, α angles are optimal with 6 °, can effectively prevent light reflection to before laser to
Light path impact, so as to reach the purpose of preferably monitoring chip of laser power.
Claims (3)
1.10G minimizes the photo-detector assembling structure of EML lasers, it is characterised in that:Including silicon substrate, detector chip and
It is heat sink, it is equipped with silicon substrate on the silicon substrate at chip of laser, chip of laser dead astern position and opens up fluted, is detected
Device chip attachment in heat sink surface, detector chip after being bound through gold thread and it is heat sink be placed in groove, it is and Nian Jie with groove walls
It is fixed.
2. 10G according to claim 1 minimizes the photo-detector assembling structure of EML lasers, it is characterised in that:It is described
Angle between detector chip and chip of laser is 6-8 °.
3. the 10G according to claim 1 or 2 minimizes the photo-detector assembling structure of EML lasers, it is characterised in that:
It is described it is heat sink for silicon substrate or nitridation aluminium material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201720202619.XU CN206498085U (en) | 2017-03-03 | 2017-03-03 | 10G minimizes the photo-detector assembling structure of EML lasers |
Applications Claiming Priority (1)
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CN201720202619.XU CN206498085U (en) | 2017-03-03 | 2017-03-03 | 10G minimizes the photo-detector assembling structure of EML lasers |
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CN206498085U true CN206498085U (en) | 2017-09-15 |
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CN201720202619.XU Active CN206498085U (en) | 2017-03-03 | 2017-03-03 | 10G minimizes the photo-detector assembling structure of EML lasers |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106785890A (en) * | 2017-03-03 | 2017-05-31 | 大连藏龙光电子科技有限公司 | 10G minimizes the photo-detector assembling structure of EML lasers |
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2017
- 2017-03-03 CN CN201720202619.XU patent/CN206498085U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106785890A (en) * | 2017-03-03 | 2017-05-31 | 大连藏龙光电子科技有限公司 | 10G minimizes the photo-detector assembling structure of EML lasers |
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