CN206490079U - A kind of cadmium telluride diaphragm solar battery - Google Patents
A kind of cadmium telluride diaphragm solar battery Download PDFInfo
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- CN206490079U CN206490079U CN201621152404.3U CN201621152404U CN206490079U CN 206490079 U CN206490079 U CN 206490079U CN 201621152404 U CN201621152404 U CN 201621152404U CN 206490079 U CN206490079 U CN 206490079U
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- cadmium telluride
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- solar battery
- film layer
- diaphragm solar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Abstract
The utility model proposes a kind of cadmium telluride diaphragm solar battery, it is characterised by, including substrate, dorsum electrode layer, p-type cadmium telluride film layer, n-type cadmium sulfide film layer, transparent electrode layer and the boron nitride film layer stacked gradually；The cadmium telluride diaphragm solar battery that the utility model is provided; encapsulated layer does not use glass plate; and one layer of boron nitride film layer is plated by the way of vacuum coating and is used as protective layer; not only greatly reduce the overall weight of component; so as to reduce the installation difficulty and cost of transportation of component; and the nitridation boron protective layer has good translucency, and hardness is high, weatherability is strong, heat resistance is strong and resistance to chemical corrosion is good.
Description
Technical field
The utility model is related to field of thin film solar cells, and in particular to a kind of cadmium telluride diaphragm solar battery.
Background technology
Cadmium telluride is a kind of compound semiconductor, typically makees absorbed layer in solar cells, simultaneously because its forbidden band
Width is 1.45eV, is best suited for photovoltaic energy conversion, hence in so that cadmium telluride absorbed layer thick about 2um is more than its band gap
Optical absorptivity reaches that 90% is possibly realized, and its theoretical light photoelectric transformation efficiency can be up under conditions of air quality AM1.5
27%.In addition, cadmium telluride is easily deposited into the film of large area, and sedimentation rate block, therefore, the based thin film solar cell
Manufacturing cost is low, is a kind of application prospect preferably novel solar battery.
The structure of traditional cadmium telluride diaphragm solar battery is：Glass substrate/nesa coating/n-type cadmium sulphide film
Layer/p-type cadmium telluride film layer/dorsum electrode layer/packaged glass plate, and the use environment of thin-film solar cells determines encapsulated layer
Material has very high mechanical strength and wear-resistant, high temperature resistant, fire resisting, resistance to oxidation, corrosion-resistant etc. functional, existing telluride
Above-mentioned requirements can not be often met in vestalium thin-film solar cell using glass plate as encapsulated layer, and are encapsulated generally for meeting
The mechanical strength of glass plate, can increase the thickness of glass plate, and the mechanical strength of encapsulated layer can be so improved to a certain extent, but
Whole solar cell module weight increase can be caused simultaneously, so as to considerably increase cost of transportation and installation difficulty.
Utility model
The utility model is directed to above-mentioned technical problem, it is proposed that a kind of new cadmium telluride diaphragm solar battery, including according to
The substrate of secondary stacking, dorsum electrode layer, p-type cadmium telluride film layer, n-type cadmium sulfide film layer, transparent electrode layer and be boron nitride film layer.
In the utility model, traditional glass-encapsulated layer is instead of with boron nitride film layer, is not only greatly reduced whole
The weight of solar cell module, has saved cost of transportation, reduces installation difficulty；Meanwhile, envelope is used as using boron nitride film layer
Fill layer, moreover it is possible to greatly improve component overall mechanical performance, electric property, thermodynamic property and chemical property.
Brief description of the drawings
Fig. 1 is the structural representation of cadmium telluride diaphragm solar battery of the present utility model.
Embodiment
The utility model is described in further detail below by way of embodiment.
The utility model proposes a kind of cadmium telluride diaphragm solar battery, including substrate 1, the dorsum electrode layer stacked gradually
2nd, p-type cadmium telluride film layer 3, n-type cadmium sulfide film layer 4, transparent electrode layer 5 and boron nitride film layer 6.
Cadmium telluride diaphragm solar battery described in the utility model, encapsulated layer does not use glass plate, and uses Vacuum Deposition
The mode of film plates one layer of boron nitride film layer 6 as protective layer, the overall weight of component is not only greatly reduced, so as to reduce group
The installation difficulty and cost of transportation of part, and the nitridation boron protective layer has a good translucency, and hardness is high, weatherability is strong,
Heat resistance is strong and resistance to chemical corrosion is good；The method that wherein vacuum coating forms boron nitride film layer 6 is people in the art
Well known to member, it is not particularly limited in the utility model, for example, membrane sample to be plated is placed in vacuum film coating chamber, using radio-frequency power supply
To boron nitride target as sputter, boron nitride film layer is obtained.
The cadmium telluride diaphragm solar battery provided according to the utility model, it is preferable that the boron nitride tunic 6 it is transparent
Spend for more than 85%；It is further preferred that the thickness of the boron nitride film layer 6 is 2um~10um；By boron nitride protection film layer 6
Thickness control is in 2um~10um, while with good light permeability, also with good mechanical strength and heat-resisting quantity and
It is resistant to chemical etching, while electrical insulation capability is good.
The cadmium telluride diaphragm solar battery provided according to the utility model, it is preferable that the substrate 1 be selected from glass and
One kind in stainless steel plate；The substrate 1 can also have resistance to elevated temperatures polymer material layer selected from other simultaneously, as long as can be full
Foot plays a supportive role and with good weather-proof and decay resistance.
The cadmium telluride diaphragm solar battery provided according to the utility model, it is preferable that the thin-film solar cells is also
Including the back contact between dorsum electrode layer 2 and p-type cadmium telluride film layer 3；Dorsum electrode layer 2 and p-type cadmium telluride film layer 3 it
Between set back contact as transition zone, can effectively reduce the contact berrier between dorsum electrode layer 2 and p-type cadmium telluride film layer 3,
Make to form good Ohmic contact between dorsum electrode layer 2 and p-type cadmium telluride film layer 3, so as to increase the effect of thin-film solar cells
Rate.The back contact can be selected from ZnTe films, ZnTe:Cu films and CuxOne or more in Te films, wherein
ZnTe films refer to zinc telluridse film, ZnTe:Cu films refer to the zinc telluridse film of Copper-cladding Aluminum Bar, CuxTe films refer to telluride copper
Film；The thickness and generation type of back contact are known to those skilled in the art.
The cadmium telluride diaphragm solar battery provided according to the utility model, it is preferable that the dorsum electrode layer 2 is led for metal
One or more of the metal in molybdenum, nickel, copper and silver in electric layer, the metal conducting layer；It is further preferred that described
The thickness of metal conducting layer is 50nm~800nm.The generation type of the metal conducting layer is known to those skilled in the art,
It is not particularly limited, in the utility model, the mode that metal conducting layer is preferred to use vacuum sputtering is formed, has in the utility model
Body is that the metal targets in metal conducting layer are sputtered using dc source, obtains metallic conduction film layer.According to this practicality
The cadmium telluride diaphragm solar battery of new offer, it is preferable that the metal in the metal conducting layer is selected from molybdenum.
The cadmium telluride diaphragm solar battery provided according to the utility model, it is preferable that the p-type cadmium telluride film layer 3
Thickness is 2um~5um, and the thickness of the n-type cadmium sulfide film layer 4 is 50nm~300nm.Wherein p-type cadmium telluride film layer 3 is as thin
The light absorbing layer of film solar cell, produces volume carrier, usually p-type brownish black Cadimium telluride thin film for absorbing sunshine
Layer；Being formed by the conventional method in this area, the utility model for the p-type cadmium telluride film layer 3 is preferred to use close spaced sublimation
Method（CSS）, vapor transport method（VTD）, the method such as silk screen print method；It is further preferred that the utility model uses near-space
Between sublimed method（CSS）Form p-type cadmium telluride film layer.The n-type cadmium sulfide film layer 4 as thin-film solar cells n-type window
Layer, with p-type cadmium telluride film layer formation PN junction, n-type cadmium sulfide film layer 4 is usually flaxen cadmium sulphide membrane layer, its preparation side
Method is to be preferred to use magnetron sputtering method, vacuum evaporation, close spaced sublimation method in the conventional preparation method in this area, the utility model
（CSS）Formed etc. method；Further, the utility model is preferably preferred to use close spaced sublimation method（CSS）Method formation n-type
Cadmium sulfide film layer.
The cadmium telluride diaphragm solar battery provided according to the utility model, it is preferable that the transparent electrode layer 5 is selected from
One kind in FTO electro-conductive glass, ito thin film, AZO films；It is further preferred that the thickness of the transparent electrode layer 5 is 10nm
~500nm.Using the transparent electrode layer of above-mentioned material thick 10nm~500nm, good translucency can be maintained, while also having
There is good electric conductivity, so as to increase the overall photoelectric efficiency of component.
Claims (11)
1. a kind of cadmium telluride diaphragm solar battery, it is characterised in that including the substrate (1), dorsum electrode layer (2), p stacked gradually
Type cadmium telluride film layer（3）, n-type cadmium sulfide film layer (4), transparent electrode layer（5）And boron nitride film layer (6).
2. cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the boron nitride film layer (6) it is saturating
Lightness is more than 85%.
3. cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that the thickness of the boron nitride film layer (6)
Spend for 2um~10um.
4. the cadmium telluride diaphragm solar battery according to claim 1-3 any one, it is characterised in that the substrate（1）
One kind in glass and stainless steel plate.
5. the cadmium telluride diaphragm solar battery according to claim 1-3 any one, it is characterised in that the film is too
Positive energy battery also includes being located at dorsum electrode layer (2) and p-type cadmium telluride film layer（3）Between back contact.
6. the cadmium telluride diaphragm solar battery according to claim 1-3 any one, it is characterised in that the back electrode
Layer (2) is metal conducting layer, one or more of the metal in molybdenum, nickel, copper and silver in the metal conducting layer.
7. cadmium telluride diaphragm solar battery according to claim 6, it is characterised in that the thickness of the metal conducting layer
For 50nm~800nm.
8. the cadmium telluride diaphragm solar battery according to claim 1-3 any one, it is characterised in that the p-type tellurium
Cadmium film layer（3）Thickness be 2um~5um, the thickness of the n-type cadmium sulfide film layer (4) is 50nm~300nm.
9. cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that transparent electrode layer (5) choosing
One kind from FTO electro-conductive glass, ito thin film, AZO films.
10. cadmium telluride diaphragm solar battery according to claim 9, it is characterised in that the transparent electrode layer（5）'s
Thickness is 10nm~500nm.
11. cadmium telluride diaphragm solar battery according to claim 5, it is characterised in that the back contact is selected from
ZnTe films, ZnTe:Cu films and CuxOne or more in Te films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621152404.3U CN206490079U (en) | 2016-10-31 | 2016-10-31 | A kind of cadmium telluride diaphragm solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621152404.3U CN206490079U (en) | 2016-10-31 | 2016-10-31 | A kind of cadmium telluride diaphragm solar battery |
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| Publication Number | Publication Date |
|---|---|
| CN206490079U true CN206490079U (en) | 2017-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621152404.3U Active CN206490079U (en) | 2016-10-31 | 2016-10-31 | A kind of cadmium telluride diaphragm solar battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493296A (en) * | 2018-03-20 | 2018-09-04 | 暨南大学 | A kind of flexible CdTe thin film solar cell and its preparation method and application |
-
2016
- 2016-10-31 CN CN201621152404.3U patent/CN206490079U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493296A (en) * | 2018-03-20 | 2018-09-04 | 暨南大学 | A kind of flexible CdTe thin film solar cell and its preparation method and application |
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