CN206420566U - A kind of space diffraction spectrum imaging device of semiconductor laser array - Google Patents
A kind of space diffraction spectrum imaging device of semiconductor laser array Download PDFInfo
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- CN206420566U CN206420566U CN201621270852.3U CN201621270852U CN206420566U CN 206420566 U CN206420566 U CN 206420566U CN 201621270852 U CN201621270852 U CN 201621270852U CN 206420566 U CN206420566 U CN 206420566U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000001228 spectrum Methods 0.000 title claims abstract description 29
- 238000003384 imaging method Methods 0.000 title claims abstract description 20
- 230000000644 propagated effect Effects 0.000 claims abstract description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 230000004075 alteration Effects 0.000 claims description 2
- 230000007306 turnover Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
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- 235000008434 ginseng Nutrition 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
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- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
The utility model provides a kind of space diffraction spectrum imaging device of semiconductor laser array, and the program includes laser, the first crack diaphragm, the second crack diaphragm, the first globe lens, the second globe lens, spectroscope, balzed grating, detector and absorption cell；The laser beam that laser is sent sequentially passes through two one group of crack diaphragm, injects spectroscope after globe lens, projected spectroscopical laser beam and prolongs X-axis and propagates to balzed grating, and absorption cell is propagated to along negative Y direction by the laser beam of dichroic mirror；The diffracted ray of balzed grating, is returned after spectroscope by dichroic mirror along light path, and detector is propagated to after being propagated through the second globe lens along Y direction.The program realizes the difraction spectrum aerial image of semiconductor laser array；Light path is shortened by 180 ° of turnovers to diffracted beam, and spectroscopical reflection simultaneously, with imaging device spaces compact, the advantages of imaging system debugs simple and easy to apply.
Description
Technical field
The utility model relates to a kind of semiconductor laser technology application field, especially a kind of semiconductor laser
The optical spectrum imaging device of array.
Background technology
Because semiconductor laser has the advantages that electro-optical efficiency height, good reliability, miniaturization, directly application and
It is used widely, especially as solid state laser and the pumping source of optical fiber laser, promotes in terms of laser pumping source
The fast development of all solid state laser.High light beam quality, high brightness, high-power diode-end-pumped source are optical-fiber lasers
Device and solid state laser realize high power, the important foundation condition of high efficiency output.
Semiconductor laser chip packaging technology, as the important process of laser fabrication, is high-power semiconductor laser
The important limiting factor of application, its quality has a strong impact on the output characteristics of semiconductor laser, the power of such as device, wavelength and
Polarization characteristic, while influenceing reliability and the life-span of semiconductor laser.Spectral characteristic as semiconductor laser important ginseng
Number, studies its behavior and can be very good to understand the index of correlation of semiconductor laser.
Such as the imaging device is studied applied to semiconductor laser encapsulation stress.At present, strain is caused on encapsulation
Measuring method has low-light current spectrum, optogalvanic spectra, the graceful spectrometry of micro- Qula etc., and the difficult point of these methods is to need accurate expensive survey
Equipment is measured, also there is higher requirement to measuring technology.The space diffraction spectrum imaging device of the present invention is based on electroluminescent (EL)
Principle can study on semiconductor laser the spectrum of each luminescence unit and its linear.Due to the wide Gao Gong of a standard 10mm
Rate semiconductor laser is formed in parallel by dozens of single-tube laser, and the stress that each laser cell is subject to is different, quantum well region
Strain also can be different, the laser spectrum that lasing goes out also slightly has difference, by the relation for setting up spectral drift and stress, you can
Obtain the stress value of each luminescence unit.
Utility model content
The purpose of this utility model, aiming at the deficiency present in prior art, and provides a kind of semiconductor laser
The technical scheme of the space diffraction spectrum imaging device of array, after program noise spectra of semiconductor lasers difraction spectrum is imaged,
The nuance of the spectral wavelength of the different luminescence units of semiconductor laser is intuitively embodied in the Z-axis direction, with imaging
Device light path is compact, the features such as debuging simple and easy to apply.
This programme is achieved by the following technical measures：
A kind of space diffraction spectrum imaging device of semiconductor laser array, include laser, the first crack diaphragm,
Second crack diaphragm, the first globe lens, the second globe lens, spectroscope, balzed grating, detector and absorption cell；Laser is sent
Laser beam sequentially pass through two one group of crack diaphragm, inject spectroscope after globe lens, projected spectroscopical laser light
Beam prolongs X-axis and propagates to balzed grating, and absorption cell is propagated to along negative Y direction by the laser beam of dichroic mirror；Balzed grating,
Diffracted ray returned along light path after spectroscope by dichroic mirror, be propagated through after the second globe lens and propagate along Y direction
To detector.
It is used as the preferred of this programme：Spectroscope and the angle of X-direction are 135 °.
It is used as the preferred of this programme：The crack height and the axle of the first globe lens of first crack diaphragm and the second crack diaphragm
To consistent；First crack diaphragm plays energy attenuation to laser spectrum；Second crack diaphragm plays suppression picture to laser spectrum
The effect of difference.
It is used as the preferred of this programme：Laser spectrum centre wavelength is λ；The blaze angle of the balzed grating, is ω, groove
Density is n；Balzed grating, meets Littrow conditions 2sin ω=kn λ 10‐6, the incident light and diffraction light of central wavelength lambda are in
Auto-collimation state, diffracted ray is returned along the same path of incident ray.
It is used as the preferred of this programme：First globe lens and the second globe lens, which are played, to be acted on laser beam convergence.
It is used as the preferred of this programme：Detector is placed at the positive focal length of the second globe lens.
The beneficial effect of this programme can be learnt according to the narration to such scheme, be converged due to being based on optics in this scenario
The principles such as poly-, transmission, diffraction, reflection, realize the difraction spectrum aerial image of semiconductor laser array；Simultaneously by spreading out
180 ° of turnovers of irradiating light beam, and spectroscopical reflection shorten light path, and with imaging device spaces compact, imaging system is debug
Simple and easy to apply the advantages of.
As can be seen here, the utility model compared with prior art, with substantive distinguishing features and progress, its beneficial effect implemented
Fruit is also obvious.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
In figure, 1 is laser, and 2 be laser beam, and 3 be the first slit diaphragm, and 4 be the first globe lens, and 5 be spectroscope, 6
It is detector for balzed grating, 7,8 be absorption cell, and 9 be the second crack grating, and 10 be the second globe lens.
Embodiment
For the technical characterstic for illustrating this programme can be understood, below by an embodiment, and its accompanying drawing is combined, it is right
This programme is illustrated.
The embodiment of this programme is：
Semiconductor laser array light source includes 19-64 luminous point, and the size of each luminous zone is about the μ of 1 μ m 100
M, the spacing of adjacent luminous zone is 150-500 μm, and centre wavelength is 800-1000nm.
The first globe lens that focal length is 300mm is chosen, semiconductor laser light source is placed in back of the body focal point, while by Fig. 1
It is shown, the first slit diaphragm is being placed at light source 5-20mm, laser beam is necessarily being blocked in quick shaft direction, is being decayed
Laser intensity, is placing the second slit diaphragm at light source 250-290mm, reaches and reduces the work that aberration improves spatial resolution
With.
As shown in figure 1, being that placement Transflective ratio is 5/5 at 50-100mm in light beam direction of advance the first globe lens of distance
Spectroscope, allow a portion laser along negative Y direction reflection, remaining laser light spectroscope continues to propagate.
As shown in figure 1, scale glaring for 1800/mm is being placed at spectroscope 20-100mm along beam direction
Grid, Littrow angle is 46 ° -64 °.The diffraction light returned through balzed grating, along original route again the light through dichroic mirror along positive Y-axis
Direction.
As shown in figure 1, putting the second globe lens that focal length is 150mm at spectroscope 50-100mm, light beam is risen
Convergence is acted on, while the focal point in lens 2 puts CCD detection device, the difraction spectrum of noise spectra of semiconductor lasers array is carried out
Imaging.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Any modifications, equivalent substitutions and improvements made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (6)
1. a kind of space diffraction spectrum imaging device of semiconductor laser array, it is characterized in that：Include laser, the first folder
Stitch diaphragm, the second crack diaphragm, the first globe lens, the second globe lens, spectroscope, balzed grating, detector and absorption cell；It is described
The laser beam that laser is sent sequentially passes through two one group of crack diaphragm, injects spectroscope after globe lens, projects light splitting
The laser beam of mirror prolongs X-axis and propagates to balzed grating, and absorption is propagated to along negative Y direction by the laser beam of dichroic mirror
Pond；The diffracted ray of the balzed grating, is returned after spectroscope by dichroic mirror along light path, and the is propagated through along Y direction
Detector is propagated to after two globe lens.
2. a kind of space diffraction spectrum imaging device of semiconductor laser array according to claim 1, it is characterized in that：
The spectroscope and the angle of X-direction are 135 °.
3. a kind of space diffraction spectrum imaging device of semiconductor laser array according to claim 1, it is characterized in that：
The crack height of the first crack diaphragm and the second crack diaphragm is axially consistent with the first globe lens；The first crack light
Door screen plays energy attenuation to laser spectrum；The second crack diaphragm plays a part of suppressing aberration to laser spectrum.
4. a kind of space diffraction spectrum imaging device of semiconductor laser array according to claim 1, it is characterized in that：
The laser spectrum centre wavelength is λ；The blaze angle of the balzed grating, is ω, and incisure density is n；The balzed grating, is expired
Sufficient Littrow conditions 2sin ω=kn λ 10-6, the incident light and diffraction light of central wavelength lambda are in auto-collimation state, diffracted ray
Returned along the same path of incident ray.
5. a kind of space diffraction spectrum imaging device of semiconductor laser array according to claim 1, it is characterized in that：
First globe lens and the second globe lens, which are played, to be acted on laser beam convergence.
6. a kind of space diffraction spectrum imaging device of semiconductor laser array according to claim 1, it is characterized in that：
The detector is placed at the positive focal length of the second globe lens.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620801101 | 2016-07-28 | ||
| CN2016208011013 | 2016-07-28 |
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| CN206420566U true CN206420566U (en) | 2017-08-18 |
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| CN201621270852.3U Active CN206420566U (en) | 2016-07-28 | 2016-11-25 | A kind of space diffraction spectrum imaging device of semiconductor laser array |
| CN201611049401.1A Active CN106441579B (en) | 2016-07-28 | 2016-11-25 | A kind of space diffraction spectrum imaging device of semiconductor laser array |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106441579A (en) * | 2016-07-28 | 2017-02-22 | 中国工程物理研究院应用电子学研究所 | Spatial diffraction spectral imaging device for semiconductor laser array |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102620827B (en) * | 2012-03-28 | 2014-06-25 | 北京理工大学 | Raster imaging spectrometer |
| CN103837233B (en) * | 2014-03-05 | 2016-05-18 | 烟台天宇光电技术有限公司 | A kind of optical spectrum imagers based on plane grating light splitting |
| CN204422809U (en) * | 2015-02-10 | 2015-06-24 | 山东交通学院 | Femtosecond laser Tabo effect is utilized to prepare the device of long period fiber grating |
| CN206420566U (en) * | 2016-07-28 | 2017-08-18 | 中国工程物理研究院应用电子学研究所 | A kind of space diffraction spectrum imaging device of semiconductor laser array |
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2016
- 2016-11-25 CN CN201621270852.3U patent/CN206420566U/en active Active
- 2016-11-25 CN CN201611049401.1A patent/CN106441579B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106441579A (en) * | 2016-07-28 | 2017-02-22 | 中国工程物理研究院应用电子学研究所 | Spatial diffraction spectral imaging device for semiconductor laser array |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106441579B (en) | 2019-01-08 |
| CN106441579A (en) | 2017-02-22 |
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