CN206401523U - SPiN diode restructural plasma sleeve-dipole antennas - Google Patents
SPiN diode restructural plasma sleeve-dipole antennas Download PDFInfo
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- CN206401523U CN206401523U CN201621390405.1U CN201621390405U CN206401523U CN 206401523 U CN206401523 U CN 206401523U CN 201621390405 U CN201621390405 U CN 201621390405U CN 206401523 U CN206401523 U CN 206401523U
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Abstract
The utility model is related to a kind of SPiN diodes restructural plasma sleeve-dipole antenna.The antenna includes semiconductor chip 1, SPiN diodes antenna arm 2, first, 2nd SPiN diodes sleeve 3, 4, coaxial feeder 5, direct current biasing line 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, wherein, SPiN diodes antenna arm 2 includes the SPiN diode strings w1 of serial connection, w2, w3, first SPiN diodes sleeve 3, 2nd SPiN diodes sleeve 4 includes the SPiN diode strings w4 of serial connection respectively, w5, w6 and SPiN diode strings w7, w8, w9, each SPiN diodes string is connected to direct current biasing by corresponding direct current biasing line.The plasma antenna arm and length sleeve that are formed during by metal direct current biasing line traffic control SPiN diode current flows realize the restructural of operating frequency of antenna.Antenna of the present utility model have it is easy of integration, can stealthy, frequency can rapid jumping the characteristics of.
Description
Technical field
The utility model belongs to antenna technical field, and in particular to a kind of SPiN diodes restructural plasma skirt dipole
Sub-antenna.
Background technology
With the further development of science and technology, wireless communication technology is played in the life of people more comes about important
Effect.The development trend of new generation of wireless communication system includes realizing high speed data transfer, realizes between multiple wireless systems
Interconnection, realizes effective utilization of limited frequency spectrum resource, obtains to adaptive ability of surrounding environment etc..To break through traditional antenna
Changeless service behaviour is difficult to meet various system requirements and application environment complicated and changeable, the concept of reconfigurable antenna
Paid attention to and developed.Reconstructable microstrip aerial is because of its small volume, and the low advantage of section turns into what reconfigurable antenna was studied
Focus.But the design of reconfigurable antenna need to consider the mutual coupling between antenna sections, and Antenna Design has larger difficulty.
Therefore, how to design simple in construction, it is easy to accomplish frequency reconfigurable antenna, be that those skilled in the art need badly
The problem of solution.
Utility model content
In order to solve the above-mentioned problems in the prior art, the utility model provides a kind of SPiN diodes restructural
Plasma sleeve-dipole antenna.The technical problems to be solved in the utility model is achieved through the following technical solutions：
Embodiment of the present utility model provides a kind of SPiN diodes restructural plasma sleeve-dipole antenna, bag
Include：
Semiconductor chip 1, SPiN diodes antenna arm 2, the first SPiN diodes sleeve 3, the 2nd SPiN diode sleeves
4th, coaxial feeder 5, direct current biasing line 9,10,11,12,13,14,15,16,17,18,19；
The SPiN diodes antenna arm 2, the first SPiN diodes sleeve 3, the 2nd SPiN diodes sleeve 4
And the direct current biasing line 9,10,11,12,13,14,15,16,17,18,19 is made on the semiconductor chip 1；It is described
SPiN diodes antenna arm 2 passes through described same with the first SPiN diodes sleeve 3 and the 2nd SPiN diodes sleeve 4
Feeder shaft 5 is connected, and the internal core wire 7 of the coaxial feeder 5 connects the SPiN diodes antenna arm 2 and the coaxial feeder 5
Outer conductor 8 connects the first SPiN diodes sleeve 3 and the 2nd SPiN diodes sleeve 4；
Wherein, the SPiN diodes antenna arm 2 includes SPiN diode strings w1, w2, w3 of serial connection, described first
SPiN diodes sleeve 3 includes SPiN diode strings w4, w5, w6 of serial connection, and the 2nd SPiN diodes sleeve 4 includes
SPiN diode string w7, w8, w9 of serial connection, each described SPiN diodes string w1, w2, w3, w4, w5, w6, w7, w8, w9
Direct current biasing is connected to by the corresponding direct current biasing line 9,10,11,12,13,14,15,16,17,18,19.
In one embodiment of the present utility model, the semiconductor chip is Si base soi semiconductor pieces.
In one embodiment of the present utility model, SPiN diodes antenna arm and SPiN diodes sleeve include N sections
SPiN diode strings, N span is N >=2.
In one embodiment of the present utility model, the direct current biasing line 9,10,11,12,13,14,15,16,17,
18th, 19 it is made in using CVD techniques on the semiconductor chip 1.
In one embodiment of the present utility model, the direct current biasing line 9,10,11,12,13,14,15,16,17,
18th, 19 prepared and formed by copper, aluminium or highly doped polysilicon.
In one embodiment of the present utility model, described SPiN diodes string w1, w2, w3, w4, w5, w6, w7, w8, w9
Including SPiN diodes, the SPiN diodes include P+ areas 27, N+ areas 26, intrinsic region 22, P+ contact zones 23 and N+ contact zones
24；The P+ contact zones 23 connect the positive pole in the P+ areas 27 and dc source respectively, and the N+ contact zones 24 connect institute respectively
State the negative pole in N+ areas 26 and dc source.
In one embodiment of the present utility model, the doping concentration in the P+ areas 27 and the N+ areas 26 is 0.5 × 1020
~5 × 1020cm-3。
In one embodiment of the present utility model, the SPiN diodes antenna arm 2 and the first SPiN diodes
Sleeve 3 and the 2nd SPiN diodes sleeve 4 include 3 SPiN diodes strings of serial connection.
Compared with prior art, the beneficial effects of the utility model：
SPiN diodes restructural plasma sleeve-dipole antenna of the present utility model, small volume, section are low, structure letter
It is single, easy to process, without complicated feed structure, frequency can rapid jumping, and antenna closing when will be in the stealthy state of electromagnetic wave, can
For various frequency hopping radio sets or equipment；It is planar structure, it is easy to group because its all constituents is in semiconductor chip side
Battle array, can be used as the basic component units of phased array antenna.
Brief description of the drawings
Fig. 1 is that a kind of structure for SPiN diodes restructural sleeve-dipole antenna that the utility model embodiment is provided is shown
It is intended to；
Fig. 2 is a kind of structural representation for SPiN diodes that the utility model embodiment is provided；
Fig. 3 is a kind of structural representation for SPiN diodes string that the utility model embodiment is provided.
Embodiment
Further detailed description, but embodiment party of the present utility model are to the utility model with reference to specific embodiment
Formula not limited to this.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of SPiN diodes restructural skirt dipole day that the utility model embodiment is provided
The structural representation of line.The SPiN diode restructural sleeve-dipole antennas include：
Semiconductor chip 1, SPiN diodes antenna arm 2, the first SPiN diodes sleeve 3, the 2nd SPiN diode sleeves
4th, coaxial feeder 5, direct current biasing line 9,10,11,12,13,14,15,16,17,18,19；
The SPiN diodes antenna arm 2, the first SPiN diodes sleeve 3, the 2nd SPiN diodes sleeve 4
And the direct current biasing line 9,10,11,12,13,14,15,16,17,18,19 is made on the semiconductor chip 1；It is described
SPiN diodes antenna arm 2 passes through described same with the first SPiN diodes sleeve 3 and the 2nd SPiN diodes sleeve 4
Feeder shaft 5 is connected, and the internal core wire 7 of the coaxial feeder 5 connects the SPiN diodes antenna arm 2 and the coaxial feeder 5
Outer conductor 8 connects the first SPiN diodes sleeve 3 and the 2nd SPiN diodes sleeve 4；
Wherein, the SPiN diodes antenna arm 2 includes SPiN diodes w1, w2, w3 of serial connection, described first
SPiN diodes sleeve 3 includes SPiN diodes w4, w5, w6 of serial connection, and the 2nd SPiN diodes sleeve 4 includes string
SPiN diode w7, w8, w9 of row connection, each described SPiN diodes string w1, w2, w3, w4, w5, w6, w7, w8, w9 pass through
The corresponding direct current biasing line 9,10,11,12,13,14,15,16,17,18,19 is connected to direct current biasing.
Wherein, the semiconductor chip is Si base soi semiconductor pieces.
Wherein, SPiN diodes antenna arm and SPiN diodes sleeve include N sections of SPiN diode strings, N value model
Enclose for N >=2.
Wherein, the direct current biasing line 9,10,11,12,13,14,15,16,17,18,19 is made in institute using CVD techniques
State on semiconductor chip 1.
Wherein, the direct current biasing line 9,10,11,12,13,14,15,16,17,18,19 is by copper, aluminium or highly doped
Polysilicon prepares to be formed.
Wherein, the SPiN diodes string include SPiN diodes, the SPiN diodes string w1, w2, w3, w4, w5,
W6, w7, w8, w9 include SPiN diodes, and the SPiN diodes include P+ areas 27, N+ areas 26, intrinsic region 22, P+ contact zones 23
And N+ contact zones 24；The P+ contact zones 23 connect the positive pole in the P+ areas 27 and dc source, the N+ contact zones 24 respectively
The negative pole in the N+ areas 26 and dc source is connected respectively.
Wherein, the doping concentration in the P+ areas 27 and the N+ areas 26 is 0.5 × 1020~5 × 1020cm-3。
Wherein, the SPiN diodes antenna arm 2 and the first SPiN diodes sleeve 3 and the poles of the 2nd SPiN bis-
Pipe sleeve cylinder 4 includes 3 SPiN diodes strings of serial connection.
The present embodiment, the plasma antenna arm and set formed during by metal direct current biasing line traffic control SPiN diode current flows
Tube length degree realizes the restructural of operating frequency of antenna, antenna of the present utility model have it is easy of integration, can stealthy, frequency can quickly jump
The characteristics of change.
Embodiment two
Show please also refer to the structure that Fig. 1 and Fig. 2, Fig. 2 are a kind of SPiN diodes that the utility model embodiment is provided
It is intended to.The present embodiment the technical solution of the utility model will be described in detail on the basis of above-described embodiment.Specifically
Ground, the SPiN diode restructural sleeve-dipole antenna structures include：
Semiconductor chip 1, SPiN diodes antenna arm 2, the first SPiN diodes sleeve 3, the 2nd SPiN diode sleeves
4th, coaxial feeder 5, direct current biasing line 9,10,11,12,13,14,15,16,17,18,19；
Wherein, the SPiN diodes antenna arm 2 includes three sections of SPiN diode strings w1, w2, w3.First SPiN bis-
Pole pipe sleeve 3 and the 2nd SPiN diodes sleeve 4 include three sections of SPiN diode strings respectively, wherein, the first SPiN
Diode sleeve 3 includes three sections of SPiN diode strings w4, w5, w6, and the 2nd SPiN diodes sleeve 4 includes three sections of SPiN bis-
Pole pipe string w7, w8, w9.And the SPiN diodes string w1 and SPiN diodes string w6, the SPiN diodes string w9
Equal length, the SPiN diodes string w2 and the SPiN diodes string w5, the equal length of the SPiN diodes string w8,
The SPiN diodes string w3 and SPiN diodes string w4, the equal length of the SPiN diodes string w7.Each
SPiN diodes string also has direct current biasing line external voltage positive pole.
As shown in figure 1, the SPiN diodes antenna arm 2, the first SPiN diodes sleeve 3 and the 2nd SPiN
Diode sleeve 4, the direct current biasing line 9,10,11,12,13,14,15,16,17,18,19 are made in using semiconductor technology
On the semiconductor chip 1.The internal core wire 7 of described one end of coaxial feeder 5 is welded in what the SPiN diodes antenna arm 2 was connected
On metal contact piece 20, and the metal contact piece 20 connects the direct current biasing line 9 simultaneously.The coaxial feeder 5 and the phase of internal core wire 7
With end the screen layer of outer conductor 8 be welded in the first SPiN diodes sleeve 3 and the 2nd SPiN diodes sleeve 4 connection
On metal contact piece 21, and the metal contact piece 21 connects the direct current biasing line 10 simultaneously.The other end of the coaxial feeder 5 leads to
SMA connectors are crossed to be connected on radio frequency connector 6.Specifically, antenna feed impedance is 50 Ω.
As shown in Figures 2 and 3, Fig. 3 is a kind of structural representation for SPiN diodes string that the utility model embodiment is provided
Figure.Each SPiN diode strings include multiple SPiN diodes, and these SPiN diodes are connected in series.The poles of SPiN bis-
SPiN diodes in pipe string are made up of P+ areas 27, N+ areas 26 and intrinsic region 22, and metal contact zone 23 is located at P+ areas 27, metal
Contact zone 24 is located at N+ areas 26, and the metal contact zone 23 of the SPiN diodes of one end in SPiN diode strings is connected to directly
The positive pole of biasing is flowed, the metal contact zone 24 of the SPiN diodes of the other end in SPiN diode strings is connected to direct current biasing
Negative pole, by applying DC voltage all SPiN diodes can be made to be in forward conduction state in whole SPiN diodes string.
As shown in figure 1, the direct current biasing line 9 and the direct current biasing line 10 are respectively connected to voltage negative pole, the direct current
Offset line 13,14,17, the direct current biasing line 12,15,18 and the direct current biasing line 11,16,19 are being respectively connected to voltage just
Pole, and any operation time can only have one group of direct current biasing line to be connected to positive polarity, by the electricity for controlling the direct current biasing line
Pressure is that alternative makes SPiN diode strings in the conduction state, when the direct current biasing line 13,14,17 is turned on, the SPiN
Diode string w3, w4, w7 are turned on, when the direct current biasing line group 12,15,18 is turned on, described SPiN diodes string w2, w5, w8
Conducting, when the direct current biasing line group 11,16,19 is turned on, SPiN diodes string w1, w6, w9 conducting.Further, lead
Logical SPiN diodes string will produce solid state plasma in intrinsic region, and it has metalloid characteristic, can be used as the radiation of antenna
Structure.When different SPiN diodes string work, the electric size length of antenna can be changed, so as to realize operating frequency of antenna
Restructural.
The semiconductor chip 1 in the present embodiment is Si base soi semiconductor pieces.
The coaxial feeder 5 in the present embodiment is preferably low-loss coax cables.
The direct current biasing line 9,10,11,12,13,14,15,16,17,18,19 in the present embodiment is preferred to use chemistry
The method of vapor deposition is made on the semiconductor chip 1, and material therefor is preferably copper, aluminium etc., can also be used highly doped
Polysilicon realizes that the direct current biasing line 9,10,11,12,13,14,15,16,17,18,19 is used to apply SPiN diode strings
Plus direct current biasing.
It is low using the frequency reconfigurable dipole antenna small volume of present embodiment, section, simple in construction, easy to process,
Without complicated feed structure, frequency can rapid jumping, and antenna closing when will be in the stealthy state of electromagnetic wave, available for various frequency hoppings
Radio station or equipment；Because its all constituents is in semiconductor chip side, it is planar structure, it is easy to organize battle array, can be used as phase
Control the basic component units of array antenna.
Above content is to combine specific preferred embodiment further detailed description of the utility model, it is impossible to
Assert that specific implementation of the present utility model is confined to these explanations.For the ordinary skill of the utility model art
For personnel, without departing from the concept of the premise utility, some simple deduction or replace can also be made, should all be regarded
To belong to protection domain of the present utility model.
Claims (8)
1. a kind of SPiN diodes restructural plasma sleeve-dipole antenna, it is characterised in that including：
Semiconductor chip (1), SPiN diodes antenna arm (2), the first SPiN diodes sleeve (3), the 2nd SPiN banks of diodes
Cylinder (4), coaxial feeder (5), direct current biasing line (9,10,11,12,13,14,15,16,17,18,19)；
The SPiN diodes antenna arm (2), the first SPiN diodes sleeve (3), the 2nd SPiN diode sleeves
And the direct current biasing line (9,10,11,12,13,14,15,16,17,18,19) is made in the semiconductor chip (1) (4)
On；The SPiN diodes antenna arm (2) and the first SPiN diodes sleeve (3) and the 2nd SPiN diode sleeves
(4) connected by the coaxial feeder (5), the internal core wire (7) of the coaxial feeder (5) connects the SPiN diodes antenna arm
And the outer conductor (8) of the coaxial feeder (5) connects the first SPiN diodes sleeve (3) and the 2nd SPiN bis- (2)
Pole pipe sleeve (4)；
Wherein, the SPiN diodes antenna arm (2) includes the SPiN diodes string (w1, w2, w3) of serial connection, described first
SPiN diodes sleeve (3) includes the SPiN diodes string (w4, w5, w6) of serial connection, the 2nd SPiN diode sleeves
(4) include the SPiN diodes string (w7, w8, w9) of serial connection, each SPiN diodes string (w1, w2, w3, w4, w5,
W6, w7, w8, w9) it is connected to directly by the corresponding direct current biasing line (9,10,11,12,13,14,15,16,17,18,19)
Stream biasing.
2. antenna according to claim 1, it is characterised in that the semiconductor chip is Si base soi semiconductor pieces.
3. antenna according to claim 1, it is characterised in that SPiN diodes antenna arm and SPiN diode sleeves are wrapped
N sections of SPiN diode strings are included, N span is N >=2.
4. antenna according to claim 1, it is characterised in that the direct current biasing line (9,10,11,12,13,14,15,
16th, 17,18,19) it is made in using CVD techniques on the semiconductor chip (1).
5. antenna according to claim 1, it is characterised in that the direct current biasing line (9,10,11,12,13,14,15,
16th, 17,18,19) prepared and formed by copper, aluminium or highly doped polysilicon.
6. antenna according to claim 1, it is characterised in that the SPiN diodes string (w1, w2, w3, w4, w5, w6,
W7, w8, w9) include SPiN diodes, the SPiN diodes include P+ areas (27), N+ areas (26), intrinsic region (22), P+ contacts
Area (23) and N+ contact zones (24)；The P+ contact zones (23) connect the positive pole of the P+ areas (27) and dc source, institute respectively
State the negative pole that N+ contact zones (24) connect the N+ areas (26) and dc source respectively.
7. antenna according to claim 6, it is characterised in that the doping concentration in the P+ areas (27) and the N+ areas (26)
For 0.5 × 1020~5 × 1020cm-3。
8. antenna according to claim 1, it is characterised in that the SPiN diodes antenna arm (2) and described first
SPiN diodes sleeve (3) and the 2nd SPiN diodes sleeve (4) include 3 SPiN diodes of serial connection
String.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621390405.1U CN206401523U (en) | 2016-12-16 | 2016-12-16 | SPiN diode restructural plasma sleeve-dipole antennas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621390405.1U CN206401523U (en) | 2016-12-16 | 2016-12-16 | SPiN diode restructural plasma sleeve-dipole antennas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206401523U true CN206401523U (en) | 2017-08-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621390405.1U Expired - Fee Related CN206401523U (en) | 2016-12-16 | 2016-12-16 | SPiN diode restructural plasma sleeve-dipole antennas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206401523U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602270A (en) * | 2016-12-16 | 2017-04-26 | 西安科锐盛创新科技有限公司 | SPiN diode reconstructible plasma sleeve dipole antenna |
-
2016
- 2016-12-16 CN CN201621390405.1U patent/CN206401523U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602270A (en) * | 2016-12-16 | 2017-04-26 | 西安科锐盛创新科技有限公司 | SPiN diode reconstructible plasma sleeve dipole antenna |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170811 Termination date: 20171216 |