CN106602213A - Frequency reconfigurable coupled feed loop antenna - Google Patents
Frequency reconfigurable coupled feed loop antenna Download PDFInfo
- Publication number
- CN106602213A CN106602213A CN201611168366.5A CN201611168366A CN106602213A CN 106602213 A CN106602213 A CN 106602213A CN 201611168366 A CN201611168366 A CN 201611168366A CN 106602213 A CN106602213 A CN 106602213A
- Authority
- CN
- China
- Prior art keywords
- spin
- spin diode
- loop aerial
- antenna
- direct current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
- H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
- H01Q5/321—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors within a radiating element or between connected radiating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Details Of Aerials (AREA)
Abstract
The invention belongs to the solid-state plasma and microstrip antenna technology, and more particularly, to a frequency reconfigurable coupled feed loop antenna, comprising: a semiconductor substrate, a dielectic plate, SPiN diode rings, a DC bias line, and a coupling feed source. When a metal contact area is connected to the positive electrode and the negative electrode of the DC bias line respectively, through the exerted DC current and voltage, all SPiN diode rings in the entire SPiN diode string can be put into a forward communication state. When the SPiN diodes are used to excite the solid-state plasma in forward-bias manner, the diodes can be applied for the electromagnetic radiation of the antenna. When the SPiN diodes are closed without bias, they take on a semiconductor dielectric state which can solve the mutually coupling problem between antennas so as to facilitate the design of a reconfigurable antenna. The frequency reconfigurable coupled feed loop antenna of the invention is small in size, reconfigurable, easy to be integrated, and has a simple structure. With the antenna, feeding becomes easy; and frequency can be jumped rapidly.
Description
Technical field
The invention belongs to solid state plasma and microstrip antenna technical field, and in particular to a kind of frequency reconfigurable coupling feedback
Electric loop aerial.
Background technology
With the further development of science and technology, wireless communication technology plays more and more important in the life of people
Effect.The development trend of new generation of wireless communication system includes realizing high speed data transfer, realizes between multiple wireless systems
Interconnection, realizes the effectively utilizes of limited frequency spectrum resource, obtains adaptive ability to surrounding etc..Therefore the communications field pair
The requirement of antenna also more and more higher.
The antenna for having worked out at present is substantially and is made of metal, thus this antenna after completing, shape is not
Can change, and with larger RCS, this greatly reduces the Stealth Fighter of antenna.Metal antenna weight is big,
Integrated level is low, also limit its application in other respects the features such as volume is big.Therefore a kind of new antenna of design is needed
The communication requirement of current rapid growth is met so as to promote the progress of the communications field.
For break through the changeless service behaviour of traditional antenna be difficult to meet various system requirements and it is complicated and changeable should
With environment, the concept of reconfigurable antenna is paid attention to and is developed, and, because of its small volume, section is low excellent for reconstructable microstrip aerial
Point becomes the focus of reconfigurable antenna research.As the design of reconfigurable antenna need to consider the mutual coupling between antenna sections, increase
The design difficulty of antenna.It is and solid state plasma is present in semiconductor medium, it is possible to resolve the mutual coupling problem between antenna, more sharp
In the design of reconfigurable antenna.Therefore the present invention is based on a kind of frequency reconfigurable couple feed loop aerial of SPiN diode designs
Solve communication problem encountered at present.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of frequency reconfigurable couple feed ring
Shape antenna.The technical problem to be solved in the present invention is achieved through the following technical solutions：
A kind of frequency reconfigurable couple feed loop aerial, including semiconductor chip；Dielectric-slab；First SPiN diodes
Ring, the 2nd SPiN diode rings, the first direct current biasing line, the second direct current biasing line are may be contained within the semiconductor chip；Coupling
Box-like feed, is arranged on the dielectric-slab.
Said frequencies restructural couple feed loop aerial, a SPiN diode rings, bis- poles of the 2nd SPiN
Pipe ring, the first direct current biasing line and the second direct current biasing line are produced on the semiconductor chip using semiconductor technology
On.
Said frequencies restructural couple feed loop aerial, the semiconductor chip and the dielectric-slab are Si bases SOI half
Conductor piece.
Said frequencies restructural couple feed loop aerial, a SPiN diode rings include a SPiN diodes
String, the 2nd SPiN diode rings include the 2nd SPiN diode strings, and a SPiN diode rings and described second
The girth of SPiN diode rings is equal to the electromagnetic wavelength of signal to be received.
Said frequencies restructural couple feed loop aerial, the SPiN diode strings are provided with the first direct current biasing
Line, the 2nd SPiN diode strings are provided with the second direct current biasing line, and the first direct current biasing line and described second straight
Stream offset line is made on the semiconductor substrate using heavily doped polysilicon.
Said frequencies restructural couple feed loop aerial, also including dielectric-slab, the upper surface of the manifold type feed is
Metal micro-strip paster, lower surface are metal ground plate.
Said frequencies restructural couple feed loop aerial, the metal micro-strip paster include major branch section, the first branch section
And the second branch section.
Said frequencies restructural couple feed loop aerial, the thickness of the width and the dielectric-slab of the major branch section is by institute
The 50 Ω impedance matchings for stating manifold type feed determine that the length and width of the first branch section and the second branch section is distinguished
Determined by the impedance matching of antenna.
The distance between said frequencies restructural couple feed loop aerial, the semiconductor chip and described dielectric-slab by
The gain of antenna is determined.
Said frequencies restructural couple feed loop aerial, it is characterised in that the number of a SPiN diode rings
For at least one, the number of the 2nd SPiN diode rings is at least one.
The invention has the beneficial effects as follows：
Firstth, the frequency reconfigurable couple feed loop aerial small volume, low section, simple structure, easy to process.
Secondth, using heavily doped polysilicon as direct current biasing line, it is to avoid impact of the metal feeder to antenna performance.
3rd, only need to be turned on or off by controlling which, i.e., as the basic component units of antenna using SPiN diodes
The restructural of achievable frequency.
Description of the drawings
By the detailed description below with reference to accompanying drawing, the other side and feature of the present invention become obvious.But should know
Road, the purpose design that the accompanying drawing is only explained, not as the restriction of the scope of the present invention, this is because which should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to scale accompanying drawing, they only try hard to concept
Ground explanation structure described herein and flow process.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail：
Fig. 1 is a kind of SPiN diode structures schematic diagram provided in an embodiment of the present invention.
Fig. 2 is a kind of SOI fundamental frequency restructural couple feed rings based on SPiN diodes provided in an embodiment of the present invention
The structural representation of shape antenna；
Fig. 3 is a kind of SOI fundamental frequency restructural couple feed rings based on SPiN diodes provided in an embodiment of the present invention
The semiconductor substrate structures schematic diagram of shape antenna；
Fig. 4 is a kind of SOI fundamental frequency restructural couple feed rings based on SPiN diodes provided in an embodiment of the present invention
The medium plate structure schematic diagram of shape antenna；
Fig. 5 is a kind of structural representation of SPiN diodes string provided in an embodiment of the present invention.
In figure：1st, semiconductor chip；2nd, dielectric-slab；3rd, a SPiN diode rings；4th, the 2nd SPiN diode rings；5th,
One direct current offset line；6th, the second direct current biasing line；7th, manifold type feed；8th, a SPiN diode strings；9th, bis- poles of the 2nd SPiN
Pipe string；10th, metal micro-strip paster；11st, metal ground plate；12nd, major branch section；13rd, the first branch section；14th, the second branch section；22、
Intrinsic region；23rd, the first metal contact area；24th, the second metal contact area；26th, N+ areas；27th, P+ areas.
Specific embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one：
Fig. 2 is referred to, Fig. 2 is a kind of SOI fundamental frequency restructurals based on SPiN diodes provided in an embodiment of the present invention
The structural representation of couple feed loop aerial.The frequency reconfigurable couple feed loop aerial includes semiconductor chip 1, medium
Plate 2, a SPiN diode rings 3, the 2nd SPiN diode rings 4, the first direct current biasing line 5, the second direct current biasing line 6 are all provided with
It is placed on the semiconductor chip 1；Manifold type feed 7, is arranged on the dielectric-slab 2.
Said frequencies restructural couple feed loop aerial, a SPiN diode rings 3, bis- poles of the 2nd SPiN
Pipe ring 4, the first direct current biasing line 5 and the second direct current biasing line 6 are produced on the quasiconductor using semiconductor technology
On substrate 1.
Said frequencies restructural couple feed loop aerial, the semiconductor chip 1 and the dielectric-slab 2 are Si base SOI
Semiconductor chip.
Said frequencies restructural couple feed loop aerial, a SPiN diode rings 3 include bis- poles of a SPiN
Pipe string 8, the 2nd SPiN diode rings 4 include the 2nd SPiN diodes string 9, and a SPiN diode rings 3 and institute
The girth for stating the 2nd SPiN diode rings 4 is equal to the electromagnetic wavelength of signal to be received.
Said frequencies restructural couple feed loop aerial, it is inclined that the SPiN diodes string 8 is provided with the first direct current
Put line 5, the 2nd SPiN diodes string 9 is provided with the second direct current biasing line 6, and the first direct current biasing line 5 and described
Second direct current biasing line 6 is produced on semiconductor chip 1 using heavily doped polysilicon.
Said frequencies restructural couple feed loop aerial, also including dielectric-slab 2, the upper surface of the manifold type feed 7
For metal micro-strip paster, lower surface is metal ground plate.
Said frequencies restructural couple feed loop aerial, the metal micro-strip paster include major branch section 12, the first branch
Section 13 and the second branch section 14.
Said frequencies restructural couple feed loop aerial, the thickness of the width and the dielectric-slab 2 of the major branch section 12
Determined by 50 Ω impedance matchings of the manifold type feed 7, the length of the first branch section 13 and the second branch section 14
Determined by the impedance matching of antenna with width respectively.
The distance between said frequencies restructural couple feed loop aerial, the semiconductor chip 1 and described dielectric-slab 2
Determined by the gain of antenna.
Said frequencies restructural couple feed loop aerial, it is characterised in that the number of a SPiN diode rings 3
For at least one, the number of the 2nd SPiN diode rings 4 is at least one.
In the present embodiment, by designing a kind of SOI fundamental frequency restructurals couple feed annular day based on SPiN diodes
The mode of line, solves the problems, such as the mutual coupling at present between the run into antenna sections of communication, brings loop aerial small volume, can weigh
Structure, be easily integrated, simple structure, feed easily, frequency can rapid jumping, can be used for the beneficial effect of various frequency hopping radio sets or equipment
Really.
Embodiment two：
It is a kind of SPiN diode structures schematic diagram provided in an embodiment of the present invention please also refer to Fig. 1 and Fig. 5, Fig. 1, figure
5 is a kind of structural representation of SPiN diodes string provided in an embodiment of the present invention.Each SPiN diode string includes multiple
SPiN diodes, and these SPiN diodes serial connections.The SPiN diodes are by 22 groups of P+ areas 27, N+ areas 26 and intrinsic region
Into the first metal contact area 23 is located at P+ areas 27, and the second metal contact area 24 is located at N+ areas 26, in SPiN diode strings
The metal contact area 23 of SPiN diodes of one end be connected to the positive pole of direct current biasing, in the other end of SPiN diode strings
SPiN diodes metal contact area 24, by apply DC voltage can make bis- poles of all SPiN in whole SPiN diodes string
Pipe is in forward conduction state.When solid state plasma being excited using the biasing of SPiN diode forwards, can be used for the electricity of antenna
Magnetic radiation.And SPiN diodes are not added with biasing when closing, then semiconductor medium state is presented, it is possible to resolve the mutual coupling between antenna is asked
Topic, the more conducively design of reconfigurable antenna.
As shown in Fig. 2 the present invention is by semiconductor chip 1, dielectric-slab 2, a SPiN diode rings 3, bis- poles of the 2nd SPiN
Pipe ring 4, the first direct current biasing line 5, the second direct current biasing line 6, manifold type feed 7 are constituted.A wherein SPiN diode rings 3,
2nd SPiN diode rings 4, the first direct current biasing line 5, the second direct current biasing line 6 are made in semiconductor-based using semiconductor technology
On piece 1, manifold type feed 7 is made on dielectric-slab 2 using chemical gas-phase deposition method.
As shown in figure 3, a SPiN diode rings 3 are made up of a SPiN diodes string 8, its ring girth is equal to and will connect
The electromagnetic wavelength of receipts, 8 one end of a SPiN diodes string are provided with the first direct current biasing line 5, another to be connected to common.
As shown in figure 3, the 2nd SPiN diode rings 4 are made up of the 2nd SPiN diodes string 9, its ring girth is equal to and will connect
The electromagnetic wavelength (frequency) of receipts, 9 one end of the 2nd SPiN diodes string is provided with the second direct current biasing line 6, another to be connected to public affairs
Holding altogether.
As shown in figure 3, the first direct current biasing line 5, the second direct current biasing line 6 are respectively connected to positive polarity, and any work
Moment can only have one group of direct current biasing line to be connected to positive polarity, by controlling the first direct current biasing line 5 or the second direct current biasing line 6
On voltage optionally make a SPiN diodes string 8 or the 2nd SPiN diodes string 9 in forward conduction state, lead
Logical SPiN diodes will produce solid state plasma in intrinsic region, and which has metalloid characteristic, can serve as the radiation of antenna
Structure.When different SPiN diodes strings works, the electric size length of antenna can be changed, so as to realize operating frequency of antenna
Restructural.
As shown in figure 4, manifold type feed 7 is made on dielectric-slab 2 using chemical gas-phase deposition method, upper surface is metal
Microband paste 10, lower surface are metal ground plate 11, and metal micro-strip paster 10 includes a major branch section 12, the first branch section 13
And the second branch section 14.10 width of major branch section and 2 thickness of dielectric-slab are determined by 50 Ω impedance matchings of feed, are additionally coupled to interior
The energy of outer shroud is bigger, then 12 width of major branch section is bigger.First branch section 13 and 14 length and width of the second branch section are by antenna
Impedance matching determine, can pass through the first branch section 13 and 14 length and width of the second branch section change adjust antenna standing wave.
The distance between semiconductor chip and dielectric-slab are determined by the gain of antenna.
Using the SOI fundamental frequency restructural couple feed loop aerials based on SPiN diodes of the present embodiment, small volume,
Restructural, be easily integrated, simple structure, feed easily, frequency can rapid jumping, can be used for various frequency hopping radio sets or equipment.
Above content is with reference to specific preferred implementation further description made for the present invention, it is impossible to assert
The present invention be embodied as be confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of without departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (10)
1. a kind of frequency reconfigurable couple feed loop aerial, it is characterised in that include：
Semiconductor chip (1)；
Dielectric-slab (2)；
First SPiN diode rings (3), the 2nd SPiN diode rings (4), the first direct current biasing line (5) and the second direct current biasing line
(6), may be contained within the semiconductor chip (1)；
Manifold type feed (7), is arranged on the dielectric-slab (2).
2. loop aerial according to claim 1, it is characterised in that SPiN diode rings (3), described second
SPiN diode rings (4), the first direct current biasing line (5) and the second direct current biasing line (6) are using semiconductor technology system
Make on the semiconductor chip (1).
3. loop aerial according to claim 1, it is characterised in that the semiconductor chip (1) is Si base soi semiconductors
Piece.
4. loop aerial according to claim 1, it is characterised in that a SPiN diode rings (3) include first
SPiN diode strings (8), the 2nd SPiN diode rings (4) include the 2nd SPiN diode strings (9), and a SPiN
The girth of diode ring (3) and the 2nd SPiN diode rings (4) is equal to the electromagnetic wavelength of its signal to be received.
5. loop aerial according to claim 1, it is characterised in that in SPiN diode strings (8) and described
2nd SPiN diode string (9) two ends are provided with the first direct current biasing line (5) and the second direct current biasing line (6), and described first is straight
Stream offset line (5) and the second direct current biasing line (6) are made on the semiconductor substrate (1) using heavily doped polysilicon.
6. loop aerial according to claim 1, it is characterised in that the upper surface of the manifold type feed (7) is metal
Microband paste (10), lower surface are metal ground plate (11).
7. loop aerial according to claim 1, it is characterised in that the metal micro-strip paster (10) is including major branch section
(12), the first branch section (13) and the second branch section (14).
8. loop aerial according to claim 1, it is characterised in that the width and the dielectric-slab of the major branch section (12)
(2) thickness determined by 50 Ω impedance matchings of the manifold type feed (7), the first branch section (13) and described second point
The length and width of minor matters (14) is determined by the impedance matching of antenna respectively.
9. loop aerial according to claim 1, it is characterised in that the semiconductor chip (1) and the dielectric-slab (2)
The distance between determined by the gain of antenna.
10. loop aerial according to claim 1, it is characterised in that the number of a SPiN diode rings (3) is
At least one, the number of the 2nd SPiN diode rings (4) is at least one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611168366.5A CN106602213A (en) | 2016-12-16 | 2016-12-16 | Frequency reconfigurable coupled feed loop antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611168366.5A CN106602213A (en) | 2016-12-16 | 2016-12-16 | Frequency reconfigurable coupled feed loop antenna |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106602213A true CN106602213A (en) | 2017-04-26 |
Family
ID=58599537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611168366.5A Withdrawn CN106602213A (en) | 2016-12-16 | 2016-12-16 | Frequency reconfigurable coupled feed loop antenna |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106602213A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768842A (en) * | 2017-09-14 | 2018-03-06 | 深圳市信维通信股份有限公司 | A kind of antenna element and array antenna for 5G mobile communication |
| CN108539361A (en) * | 2018-04-16 | 2018-09-14 | 重庆大学 | A kind of small Huygens's source antenna of electricity that polarization is restructural |
| CN108682971A (en) * | 2018-03-22 | 2018-10-19 | 南京理工大学 | A kind of restructural micro-strip array antenna of Ku/Ka audio range frequencies |
-
2016
- 2016-12-16 CN CN201611168366.5A patent/CN106602213A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768842A (en) * | 2017-09-14 | 2018-03-06 | 深圳市信维通信股份有限公司 | A kind of antenna element and array antenna for 5G mobile communication |
| CN107768842B (en) * | 2017-09-14 | 2023-10-17 | 深圳市信维通信股份有限公司 | Antenna unit and array antenna for 5G mobile communication |
| CN108682971A (en) * | 2018-03-22 | 2018-10-19 | 南京理工大学 | A kind of restructural micro-strip array antenna of Ku/Ka audio range frequencies |
| CN108539361A (en) * | 2018-04-16 | 2018-09-14 | 重庆大学 | A kind of small Huygens's source antenna of electricity that polarization is restructural |
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Application publication date: 20170426 |