CN206370418U - One kind printing ceramic diode flip chip packaging structure - Google Patents
One kind printing ceramic diode flip chip packaging structure Download PDFInfo
- Publication number
- CN206370418U CN206370418U CN201621465313.5U CN201621465313U CN206370418U CN 206370418 U CN206370418 U CN 206370418U CN 201621465313 U CN201621465313 U CN 201621465313U CN 206370418 U CN206370418 U CN 206370418U
- Authority
- CN
- China
- Prior art keywords
- silver
- conductor layer
- ceramic substrate
- salient point
- flip chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000919 ceramic Substances 0.000 title claims abstract description 44
- 238000007639 printing Methods 0.000 title claims abstract description 15
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052709 silver Inorganic materials 0.000 claims abstract description 28
- 239000004332 silver Substances 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 24
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 13
- 239000003822 epoxy resin Substances 0.000 claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000005253 cladding Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 31
- 238000000034 method Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Abstract
Ceramic diode flip chip packaging structure, including chip are printed the utility model discloses one kind, the chip is provided with silver-colored salient point；Also include ceramic substrate, the ceramic substrate back side and front are provided with silver conductor layer as backplate and front electrode, the silver-colored salient point is correspondingly arranged with silver conductor layer and the silver-colored salient point is fixed on the silver conductor layer；Provided with the epoxy resin for coating the silver conductor layer, silver-colored salient point and chip above the ceramic substrate, the ceramic substrate both sides of edges is respectively arranged with the silver conductor layer that front and back electrode is connected and is used as side electrode.By the combination of flip chip technology (fct) and ceramic substrate printing technology, the electrical and heat conduction quality except being conducive to improving product more effectively raising efficiency and can reduce cost.
Description
Technical field
The utility model is related to a kind of printing ceramic diode flip chip packaging structure, belongs to diode packaging technology neck
Domain.
Background technology
SOT-236 encapsulation technologies are carried out with copper stent as carrier with die bond, bonding wire and the technology of molding in the market
Encapsulation, diode package is completed by plating and punching course.
Industry conventional process, needs first to fix every crystal grain with conducting resinl, and baking-curing conducting resinl, and bonding wire also can only be every
Bar line is burn-on one by one, and overall process is inefficient.Although bonding wire craft is ripe, for the big encapsulating products of gold thread usage amount,
Often cost can be improved.
The distance and spacing of gold thread can influence the quality such as resistance and electric capacity, and line footpath and apart from can influence the biography of chip heat
Pass, signal quality can be had a strong impact on for the chip of high-frequency data.
The epoxy resin used on the market at present coats whole chip and copper stent, and epoxy resin heat-conducting effect is poor, overall
Heat conduction can only be exported by copper stent, if heat fails effective export, caused integral product constant temperature to rise, will be had a strong impact on matter
Amount.
In SOT-236 encapsulation technologies, the bonding area of PIN is small, if flatness is not good, and welding is easily caused during SMT pieces
The problems such as missing solder, rosin joint or dry joint, influence SMT device efficiencies.
The problem of traditional bonding wire is packaged with height limitation, causes finished product thickness not reduce, empty in client assembling design
Between take it is more, be not suitable for miniaturized products demand.
Utility model content
Technical problem to be solved in the utility model is that the defect for overcoming prior art prints ceramic two pole there is provided one kind
Pipe flip chip packaging structure, by the combination of flip chip technology (fct) and ceramic substrate printing technology, is produced except being conducive to improving
The electrical and heat conduction quality of product, more effectively raising efficiency and can reduce cost.
In order to solve the above technical problems, the utility model provides a kind of printing ceramic diode flip chip packaging structure,
It is characterized in that, including chip, the chip is provided with silver-colored salient point；Also include ceramic substrate, the ceramic substrate back side and front
Provided with silver conductor layer as backplate and front electrode, the silver-colored salient point is corresponding with the ceramic substrate positive silver conductor layer
Set and the silver-colored salient point is fixed on the silver conductor layer；Above the ceramic substrate provided with coat the silver conductor layer,
The epoxy resin of silver-colored salient point and chip, the ceramic substrate both sides of edges is respectively arranged with the silver that front and back electrode is connected
Conductor layer is used as side electrode.
Further, nickel dam and tin layers are respectively equipped with the front electrode, backplate and side electrode.
Further, the thickness of the nickel dam is 5 ~ 15 μm；The thickness of the tin layers is 6 ~ 15 μm.
Further, the thickness of the epoxy resin is 800 μm.
Further, the material of the ceramic substrate is aluminum oxide.
Further, the silver-colored salient point is respectively equipped with six with silver conductor layer.
The beneficial effect that the utility model is reached：
1. use reverse installation process, can electroplating cost is almost close on electrosilvering salient point, single wafer on full wafer wafer, only
Want the more than enough cost of salient point quantity just also lower than gold thread, the process of bonding wire can be omitted during flip-chip in addition, equal to die bond and bonding wire
Two kinds of processes are combined, can effective raising efficiency.Salient point on chip can shorten the distance of electric current transmission, reduce inductance, resistance
And the influence such as electric capacity, and chip thermally conductive pathways are shortened, improve the electrical of encapsulating products and radiating reliability.
2. using printing technology, ceramic substrate lower section and side PIN termination electrode are coated with using silver conductive layer, and width is reachable
0.5mm, increases bonding area, and PIN is smooth, and welding missing solder, rosin joint or dry joint are easily caused when can effectively reduce SMT pieces
Problem.
3. a process technique is using printing silver conductive layer, thermal conductivity than copper more preferably, adds ground for ceramic substrate, than tradition
The conductivity of heat of processing procedure epoxy resin cladding is better, therefore in product integral heat sink performance, can be better than conventional epoxies
Coat the processing procedure of copper stent.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
The utility model is further described below in conjunction with the accompanying drawings.Following examples are only used for clearly illustrating this
The technical scheme of utility model, and protection domain of the present utility model can not be limited with this.
As shown in figure 1, a kind of print sets on ceramic diode flip chip packaging structure, including chip 2, the chip 2
There are six silver-colored salient points 1.Also include aluminium oxide ceramic substrate 3, the back side of aluminium oxide ceramic substrate 3 and front are respectively equipped with six
Silver conductor layer 4 is as backplate and front electrode, and the silver-colored salient point 1 is corresponding with the ceramic substrate 3 positive silver conductor layer 4
Set and the silver-colored salient point 1 is fixed on the silver conductor layer 4.The top of aluminium oxide ceramic substrate 3 is described provided with cladding
The epoxy resin 5 of silver conductor layer 4, silver-colored salient point 1 and chip 2, the thickness of the epoxy resin 5 is 800 μm.The aluminium oxide ceramics
The both sides of edges of substrate 3 is respectively arranged with the silver conductor layer 4 that front and back is connected and is used as side electrode.The front electrode, the back of the body
Nickel dam and tin layers 6 are respectively equipped with face electrode and side electrode, the thickness of the nickel dam is 5 ~ 15 μm；The thickness of the tin layers is
6~15μm。
Preparation technology：
1. silver-colored salient point 1 in plating, cuts into single chip 2 by wafer afterwards first on full wafer wafer, on every chips 2
Have six silver-colored salient points 1.
2. distinguished on aluminium oxide ceramic substrate 3 using unfilled corner；Led in six blocks of silver of back up of aluminium oxide ceramic substrate 3
Body layer 4 is used as backplate；Then it is used as front electrode in the silver-colored conducting wire of six pieces of front printing of aluminium oxide ceramic substrate 3.
3. being overturn chip 2 using upside-down mounting equipment, the silver-colored correspondence of salient point 1 of six on each chip 2 is in alumina ceramic-base
Silver-colored salient point 1, is fixed on silver conductor by the silver-colored conductive electrode of 3 positive six pieces of plate by ultrasonic vibration.
4. the chip 2 fixed and aluminium oxide ceramic substrate 3 are then subjected to moulded package, asphalt mixtures modified by epoxy resin with epoxy resin 5
About 800 μm of the thickness of fat 5.Then respectively printed by the folding bar of aluminium oxide ceramic substrate 3, and at the both sides of the edge of aluminium oxide ceramic substrate 3
Upper three pieces of silver conductors layer 4 connects electrode conduction circuit as side electrode.
5. finally electroless nickel layer and tin layers 6 on the front electrode, side electrode and backplate of product, nickel layer thickness is
5 ~ 15 μm, tin thickness is 6 ~ 15 μm.
Described above is only preferred embodiment of the present utility model, it is noted that for the common skill of the art
For art personnel, on the premise of the utility model technical principle is not departed from, some improvement and deformation can also be made, these change
Enter and deform and also should be regarded as protection domain of the present utility model.
Claims (6)
1. one kind printing ceramic diode flip chip packaging structure, it is characterized in that, including chip (2) is set on the chip (2)
There is silver-colored salient point (1)；Also include ceramic substrate (3), ceramic substrate (3) back side and front are used as the back of the body provided with silver conductor layer (4)
Face electrode and front electrode, the positive silver conductor layer (4) of the silver-colored salient point (1) and the ceramic substrate (3) be correspondingly arranged and
The silver-colored salient point (1) is fixed on the silver conductor layer (4)；Provided with the cladding silver conductor layer above the ceramic substrate (3)
(4), silver-colored salient point (1) and the epoxy resin (5) of chip (2), ceramic substrate (3) both sides of edges be respectively arranged with by just, the back of the body
The silver conductor layer (4) that face electrode is connected is as side electrode.
2. a kind of printing ceramic diode flip chip packaging structure according to claim 1, it is characterized in that, the front
Nickel dam and tin layers (6) are respectively equipped with electrode, backplate and side electrode.
3. a kind of printing ceramic diode flip chip packaging structure according to claim 2, it is characterized in that, the nickel dam
Thickness be 5 ~ 15 μm；The thickness of the tin layers is 6 ~ 15 μm.
4. a kind of printing ceramic diode flip chip packaging structure according to claim 1, it is characterized in that, the epoxy
Resin（5）Thickness be 800 μm.
5. a kind of printing ceramic diode flip chip packaging structure according to claim 1, it is characterized in that, the ceramics
The material of substrate (3) is aluminum oxide.
6. a kind of printing ceramic diode flip chip packaging structure according to claim 1, it is characterized in that, the silver is convex
Point (1) is respectively equipped with six with silver conductor layer (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621465313.5U CN206370418U (en) | 2016-12-29 | 2016-12-29 | One kind printing ceramic diode flip chip packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621465313.5U CN206370418U (en) | 2016-12-29 | 2016-12-29 | One kind printing ceramic diode flip chip packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206370418U true CN206370418U (en) | 2017-08-01 |
Family
ID=59393387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621465313.5U Active CN206370418U (en) | 2016-12-29 | 2016-12-29 | One kind printing ceramic diode flip chip packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206370418U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11282994B2 (en) | 2017-10-16 | 2022-03-22 | Corning Incorporated | Bezel-free display tile with edge-wrapped conductors and methods of manufacture |
-
2016
- 2016-12-29 CN CN201621465313.5U patent/CN206370418U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11282994B2 (en) | 2017-10-16 | 2022-03-22 | Corning Incorporated | Bezel-free display tile with edge-wrapped conductors and methods of manufacture |
| US11777067B2 (en) | 2017-10-16 | 2023-10-03 | Corning Incorporated | Bezel-free display tile with edge-wrapped conductors and methods of manufacture |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231016 Address after: 226000 No. 789 Kangfu Road, Nantong High tech Industrial Development Zone, Nantong City, Jiangsu Province Patentee after: LIZHI ELECTRONICS (NANTONG) CO.,LTD. Address before: 215300 No. 989, Han Pu Road, Chengbei hi tech Industrial Park, Kunshan, Suzhou, Jiangsu Patentee before: LIZ ELECTRONICS (KUNSHAN) Co.,Ltd. |
|
| TR01 | Transfer of patent right |