CN206350152U - A kind of shortwave power amplifier module - Google Patents
A kind of shortwave power amplifier module Download PDFInfo
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- CN206350152U CN206350152U CN201720028763.6U CN201720028763U CN206350152U CN 206350152 U CN206350152 U CN 206350152U CN 201720028763 U CN201720028763 U CN 201720028763U CN 206350152 U CN206350152 U CN 206350152U
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- power amplifier
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- amplification circuit
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Abstract
The utility model discloses a kind of shortwave power amplifier module in electronic component field, including：Power amplifier module, filter circuit and power-sensing circuit, the output end of power amplifier module is electrically connected with the input of filter circuit, the output end of filter circuit is electrically connected with the input of power-sensing circuit, power-sensing circuit and power amplifier module feedback link, the utility model reduces amplifying element, power amplifier tube efficiency is improved, resistance to load mismatch ability is improved, available in each class of electronic devices.
Description
Technical field
The utility model is related to a kind of electronic component, more particularly to a kind of power amplifier module.
Background technology
The technical indicator of power amplifier module in the prior art：2 ~ 30MHz of frequency range, jamming power 400W, harmonics restraint >=-
25dB, supply voltage 48V, average efficiency 40%.The index, which has that harmonics restraint degree is low, supply voltage is high, average efficiency is low lacks
Fall into.
The structure type of existing product：Power amplifier unit is by preamplification board, power distribution plate, power amplification plate one, power
Amplification board two, power combing plate and filter band, cumulative volume is 350*300*150mm.There is the list of composition system in the structure type
Plate species is more, bulky defect.
Utility model content
The purpose of this utility model is to provide a kind of shortwave power amplifier module, reduces amplifying element, improves power amplifier tube efficiency, carries
High resistance to load mismatch ability.
What the purpose of this utility model was realized in：A kind of shortwave power amplifier module, including：
Power amplifier module, is responsible for being enlarged into the pumping signal of input into required powered interferer；
Filter circuit, the powered interferer for being responsible for exporting power amplifier module is divided into multiple sub-bands, completes power
The subrane LPF of interference signal；
Power-sensing circuit, is responsible for realizing forward and reverse power detection of filtered powered interferer, and gives outside
Interference excitation module carry out detection control, and forward and reverse power detection value fed back into power amplifier module make closed-loop control；
The output end of the power amplifier module is electrically connected with the input of filter circuit, the output end of the filter circuit
Electrically connected with the input of power-sensing circuit, the power-sensing circuit and power amplifier module feedback link.
As further restriction of the present utility model, the power amplification circuit includes：
Automatic gain control circuit, pre-amplification circuit, power amplification circuit and Auxiliary Power Units,
Auxiliary Power Units, are responsible for power amplification circuit in-line power；
The output end of automatic gain control circuit is electrically connected with the input of pre-amplification circuit, pre-amplification circuit it is defeated
Go out end to electrically connect with the input of power amplification circuit, the output end of power amplification circuit and the input of filter circuit are electrically connected
Connect.
It is used as further restriction of the present utility model, BGY67A amplification mould of the pre-amplification circuit from NXP companies
Block is used as acp chip.
As further restriction of the present utility model, the power amplification circuit selects the durable type LDMOS work(of NXP companies
Rate transistor BLF574XR is used as acp chip.Complete after power amplification, then pass through 1：4 power transformers become output impedance
50 Ω, magnetic core of transformer have chosen R40C1 materials, and it has 400mT saturation flux and the 100mW/cm3 at 15MHz frequencies
Loss, can further reduce output loss, improve overall efficiency.
As further restriction of the present utility model, the automatic gain control circuit is tied from operational amplifier LM158
Close electrically controlled attenuator HE412A and complete automatic growth control.
During utility model works, power amplification circuit is put by automatic gain control circuit, pre-amplification circuit, power
Big circuit, by pumping signal（Such as：5dBm）It is enlarged into the powered interferer of needs（Such as：51dBm, 130W or so）, give filter
Wave circuit, power-sensing circuit；The power detection value of power-sensing circuit feeds back to automatic gain control unit, by changing electricity
The controlled quentity controlled variable of controlled attenuator realizes power closed-loop control；What pre-amplification circuit was selected is the BGY67A amplification modules of NXP companies,
The module gain is 24dB, and peak power output is more than 1W（30dBm）, with extremely low noise coefficient and very high dynamic model
Enclose；That power amplification circuit is selected is the durable type LDMOS power transistor BLF574XR of the newest release of NXP companies, the mould
Block gain is 26dB, and peak power output is more than 600W, and efficiency is up to 70%.
Compared with prior art, the beneficial effects of the utility model are:
（1）Amplifying element is reduced, power amplifier tube efficiency is improved
Equipment requirement output jamming power is not less than 100W, and routinely design selects gain in 10dB or so power tube,
Then 100W（50dBm）Output needs 10W to drive, and whole efficiency is not high；If from gain 20dB or so power tube,
100W outputs only need 1W to drive；That actual use is the power tube BLF574XR of NXP companies, and it is in 3MHz~30MHz scopes
Interior gain is more than 25dB, and required driving power is very small, and improved efficiency is clearly；Its power tube also has high-output power
With efficient characteristic, efficiency during output 100W power reaches 70%, and the efficiency of conventional power tube is only 50% or so, is selected
The pipe can directly obtain 20% improved efficiency.
（2）Redundancy Design is carried out, resistance to load mismatch ability is improved
BLF574XR is the durable type LDMOS power transistors of NXP companies, and the product is sealed using the ceramics of mounting flange
Dress, the thermal resistance representative value at+125 DEG C from node to shell is that 0.14K/W, instantaneous thermal resistance representative value are 0.04K/W, therefore had
Help prevent under the conditions of severe mismatch because of heat build-up caused by the power output of reflection, particularly when antenna it is various not
With (such as snow and ice) under environmental stress conditions in use, serious load mismatch situation may often be met with；BLF574XR's
Rated output power is 600W, and power redundancy amount is big, with very big standing wave tolerance, it is ensured that power tube is opening short circuit
Do not damaged under state, be greatly enhanced the reliability of power amplifier module itself.
Brief description of the drawings
Fig. 1 is the utility model control principle block diagram.
Fig. 2 is power amplification circuit circuit theory diagrams in the utility model.
Fig. 3 is the circuit theory diagrams of the utility model filter circuit and power-sensing circuit.
Embodiment
A kind of shortwave power amplifier module as Figure 1-3, including：
Power amplifier module, is responsible for being enlarged into the pumping signal of input into required powered interferer, power amplification electricity
Road includes：Automatic gain control circuit, pre-amplification circuit, power amplification circuit and Auxiliary Power Units, accessory power supply list
Member, is responsible for power amplification circuit in-line power；The output end of automatic gain control circuit and the input of pre-amplification circuit
Electrical connection, the output end of pre-amplification circuit is electrically connected with the input of power amplification circuit, and pre-amplification circuit is public from NXP
The BGY67A amplification modules of department are as acp chip, and automatic gain control circuit combines electricity tune from operational amplifier LM158 and declined
Subtract device HE412A and complete automatic growth control, power amplification circuit selects the durable type LDMOS power transistors of NXP companies
BLF574XR is used as acp chip；
Filter circuit, the powered interferer for being responsible for exporting power amplifier module is divided into multiple sub-bands, completes power
The subrane LPF of interference signal；
Power-sensing circuit, is responsible for realizing forward and reverse power detection of filtered powered interferer, and gives outside
Interference excitation module carry out detection control, and forward and reverse power detection value fed back into power amplifier module make closed-loop control；
The output end of power amplifier module is electrically connected with the input of filter circuit, and output end and the power of filter circuit are examined
The input electrical connection of slowdown monitoring circuit, power-sensing circuit and power amplifier module feedback link.
The utility model has the characteristics that：
（1）Amplifying element is reduced, power amplifier tube efficiency is improved
Equipment requirement output jamming power is not less than 100W, and routinely design selects gain in 10dB or so power tube,
Then 100W（50dBm）Output needs 10W to drive, and whole efficiency is not high；If from gain 20dB or so power tube,
100W outputs only need 1W to drive；That actual use is the power tube BLF574XR of NXP companies, and it is in 3MHz~30MHz scopes
Interior gain is more than 25dB, and required driving power is very small, and improved efficiency is clearly；Its power tube also has high-output power
With efficient characteristic, efficiency during output 100W power reaches 70%, and the efficiency of conventional power tube is only 50% or so, is selected
The pipe can directly obtain 20% improved efficiency.
（2）Redundancy Design is carried out, resistance to load mismatch ability is improved
BLF574XR is the durable type LDMOS power transistors of the newest release of NXP companies, and the product is using mounting flange
Ceramic package, the thermal resistance representative value at+125 DEG C from node to shell is that 0.14K/W, instantaneous thermal resistance representative value are 0.04K/W,
Therefore help to prevent because of heat build-up caused by the power output of reflection under the conditions of severe mismatch, particularly when antenna exists
(such as snow and ice) is in use, serious load mismatch situation may often be met with various varying environment stress conditions；
BLF574XR rated output power is 600W, and power redundancy amount is big, with very big standing wave tolerance, it is ensured that power amplifier
Pipe is not damaged in the case where opening short-circuit condition, is greatly enhanced the reliability of power amplifier module itself.
（3）Interstage matched reduces matching loss without using 50 Ω characteristic impedances
Match directly to match between the promotion level and final stage of interference extension set power amplifier, do not transform to the resistance of 50 Ω characteristics
Anti-, the advantage so designed is to eliminate the match circuit that one-level transforms to 50 Ω final stage power amplifier input impedance, because only
There is match circuit will necessarily just bring certain loss；Direct matching scheme can further reduce loss, lift overall efficiency.
（4）Reduce output loss
Final stage power amplifier is the key of improved efficiency, and the insertion loss for exporting transformer is its emphasis；Ideal transformer
It is lossless, eddy-current loss, saturation flux loss in actual use due to magnetic core inevitably decline overall efficiency,
At this moment just become extremely important from low-loss, the magnetic core of high saturation magnetic flux density；Conventional NXO-100 materials have 330mT's
Saturation flux and at 15MHz frequencies 200mW/cm3 loss, a kind of good material of can yet be regarded as, but lower in order to pursue
Loss, the utility model have chosen R40C1 materials, and it has 400mT saturation flux and the 100mW/cm3 at 15MHz frequencies
Loss, can further reduce output loss, improve overall efficiency.
（5）Reduce supply voltage
The test data provided by manufacturer, power tube BLF574XR power outputs in the case of its rated operational voltage 50V
Up to 600W, 100W power output is only needed in this project, at this moment power amplification efficiency will necessarily be reduced.By reducing supply voltage
To 26V, its power output is set, just close to saturation state, both to have improved power amplification efficiency during low power output, again in 150W or so
The reliability of power tube is improved, good effect is achieved.
（6）Rational heat dissipation design
The service life of power tube and the inversely proportional relation of its junction temperature, junction temperature are higher, and the life-span is shorter.Rational air channel is with dissipating
Hot area can effectively improve the reliability of power amplifier.In view of the low pressure of high altitude localities the effect of air blast cooling may be made big
It is big to weaken, consider that power discharging radiator has rational area of dissipation while equipment light-weight design is considered.
The utility model is not limited to above-described embodiment, on the basis of technical scheme disclosed in the utility model, this
The technical staff in field is according to disclosed technology contents, it is not necessary to which performing creative labour just can be special to some of which technology
Levy and make some replacements and deform, these are replaced and deformed in protection domain of the present utility model.
Claims (5)
1. a kind of shortwave power amplifier module, it is characterised in that including：
Power amplifier module, is responsible for being enlarged into the pumping signal of input into required powered interferer；
Filter circuit, the powered interferer for being responsible for exporting power amplifier module is divided into multiple sub-bands, completes power disturbance
The subrane LPF of signal；
Power-sensing circuit, is responsible for realizing forward and reverse power detection of filtered powered interferer, and gives the dry of outside
Disturb excitation module and carry out detection control, and forward and reverse power detection value is fed back into power amplifier module and make closed-loop control；
The output end of the power amplifier module is electrically connected with the input of filter circuit, the output end and work(of the filter circuit
The input electrical connection of rate detection circuit, the power-sensing circuit and power amplifier module feedback link.
2. a kind of shortwave power amplifier module according to claim 1, it is characterised in that the power amplifier module includes：
Automatic gain control circuit, pre-amplification circuit, power amplification circuit and Auxiliary Power Units,
Auxiliary Power Units, are responsible for power amplification circuit in-line power；
The output end of automatic gain control circuit is electrically connected with the input of pre-amplification circuit, the output end of pre-amplification circuit
Electrically connected with the input of power amplification circuit, the output end of power amplification circuit is electrically connected with the input of filter circuit.
3. a kind of shortwave power amplifier module according to claim 2, it is characterised in that the pre-amplification circuit selects NXP
The BGY67A amplification modules of company are used as acp chip.
4. a kind of shortwave power amplifier module according to claim 2, it is characterised in that the power amplification circuit selects NXP
The durable type LDMOS power transistors BLF574XR of company is used as acp chip.
5. a kind of shortwave power amplifier module according to claim 2, it is characterised in that the automatic gain control circuit is selected
Operational amplifier LM158 combination electrically controlled attenuators HE412A completes automatic growth control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720028763.6U CN206350152U (en) | 2017-01-11 | 2017-01-11 | A kind of shortwave power amplifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720028763.6U CN206350152U (en) | 2017-01-11 | 2017-01-11 | A kind of shortwave power amplifier module |
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| Publication Number | Publication Date |
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| CN206350152U true CN206350152U (en) | 2017-07-21 |
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| CN201720028763.6U Active CN206350152U (en) | 2017-01-11 | 2017-01-11 | A kind of shortwave power amplifier module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110308758A (en) * | 2019-08-12 | 2019-10-08 | 扬州通信设备有限公司 | Shortwave power amplifier power stability closed control circuit |
-
2017
- 2017-01-11 CN CN201720028763.6U patent/CN206350152U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110308758A (en) * | 2019-08-12 | 2019-10-08 | 扬州通信设备有限公司 | Shortwave power amplifier power stability closed control circuit |
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