CN201122934Y - High power field effect pipe power amplifier module - Google Patents
High power field effect pipe power amplifier module Download PDFInfo
- Publication number
- CN201122934Y CN201122934Y CNU2007200425825U CN200720042582U CN201122934Y CN 201122934 Y CN201122934 Y CN 201122934Y CN U2007200425825 U CNU2007200425825 U CN U2007200425825U CN 200720042582 U CN200720042582 U CN 200720042582U CN 201122934 Y CN201122934 Y CN 201122934Y
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- power
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- field effect
- amplifier module
- power amplifier
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Abstract
The utility model relates to a power amplifier module for the high power field effect tube. The power amplifier module comprises a power amplifying circuit, a coupler and a negative feedback circuit, wherein the power amplifying circuit adopts a pair of MRF151 or SD2933 field effect tubes, the input radio frequency of the module is connected in parallel, divided into two circuits and connected with the output terminals of the MRF151 or SD2933 field effect tubes through the coupler, to supply for the two field effect tubes for amplification, the output signals of the field effect tubes are transmitted to the inferior load through the coupler, and the feedback signals are output from the coupler to be connected with the input terminals of the two field effect amplifiers to act as the negative feedback circuit. The power amplifier module meets the communication requirements of the transmitter with high power, the development tendency of the power amplifier module is grasped, and the performance index of the integral communication system is improved.
Description
One, technical field
The utility model belongs to radio communication.Relate to the high-power FET power amplifier module that the high power station emission is used, especially a few hectowatt class large power field effect transistor power amplifier modules.
Two, background technology
Be in order to satisfy certain Shortwave Communication System, to need powerful power amplifier module.Its transmitting power is at 100-500 watt.Especially 150 and the high-power power amplifier module of 300W specification.This module require satisfy the distortion of complete machine in-band intermodulation＜-30dB, the broadband noise index also has very high requirement, and the BJT power amplifier module that the shortwave rader transmitter of existing equal-wattage grade uses all is difficult to meet the requirements on bulking value, and on indexs such as intermodulation and harmonic wave very big-difference is arranged.And preferably require intermodulation distortion＜-35 of individual module in whole shortwave frequency range to-40dB; And former BJT amplification module all has the gap of 5-10dB on each index.
And the power amplifier unit integrated level is improved greatly, make that the volume of power amplifier is compressed, and the independence that has strengthened individual module is the design object of high-power power amplifier module.
Three, summary of the invention
The utility model purpose is, proposes that a kind of to satisfy the distortion of complete machine in-band intermodulation little, and the broadband noise index is low, improves the index performances such as intermodulation, harmonic wave of module significantly, improved the security and stability of module, strengthens integrated level, independence and the interchangeability of module.Module input signal 20mW～40mW, maximum can be exported 150W to 300W.Thereby satisfy the communicating requirement of high-power communication transmitter.
The purpose of this utility model is achieved in that the high-power FET power amplifier module, comprise that power amplification circuit, coupler and negative-feedback circuit constitute, power amplification circuit is pair of MR F151 or SD2933 field effect transistor, the radio-frequency input signals of module is divided into the input that two-way connects MRF151 or SD2933 field effect transistor through a coupler parallel connection, supply with two field effect transistor and amplify, the field effect transistor output signal is transferred to subordinate's load through coupler again; Connect the input of amplifier as negative-feedback circuit from the coupler output feedback signal.
The biasing keying circuit that is provided with as the quiescent operation point voltage connects the field effect transistor biasing circuit.When the keying signal diode of connecting connects field effect transistor amplification circuit, the output series diode of amplifying circuit and adjustable resistance are connected the G pole tension of field effect transistor again.
Amplifying signal also can be by the synthetic output of transmitter, and amplifier section uses 40 to 55V direct current supplys, has guaranteed powerful output.The utility model adopts module input signal 20mW～40mW, output 150-500W.
Improvement of the present utility model is: be provided with control section and circuit protection part; Control section comprises that mainly biasing keying circuit and power output detect, over-current detection circuit, thereby input signal size, quiescent point are controlled and adjusted; The circuit protection part has mainly comprised power protection and overheat protector, is to provide protection to power discharging devices at different levels.
Improvement of the present utility model also comprises: be provided with ouput power detection circuit: output signal is connected to the detection diode, connects the magnitude of voltage that an amplifying circuit and a divider resistance obtain the power detection value again.Described amplification circuit output end connects LED or buzzer.It is that connecing of output signal detected the detection of diode through diode that power output detects, and connects amplification circuit output end again and connects a series connection resistance and obtain one and be the magnitude of voltage of power detection value, especially by picking out diode between divider resistance.
Access sample resistance and amplifying circuit between a string resistance of output termination and connect and show LED or buzzer.
The utility model is integrated biasing keying, overheat protector, employing high stable integrated circuit control power protection, and because the negative temperature coefficient of field effect transistor, so better fail safe, stability are arranged.Module has adopted aluminum alloy heat sink, has guaranteed to concentrate at high power the thermal diffusivity of situation lower module.Adopt the high-power FET amplifying circuit, accurately adjust consistency, improved the indexs such as harmonic wave, intermodulation of output signal greatly the pipe performance.Design improves the power amplifier unit integrated level greatly like this, makes that the volume of power amplifier is compressed, and has strengthened the independence of individual module.
Characteristics of the present utility model are: the communicating requirement that has satisfied high-power communication transmitter.The power amplifier module development trend of having held has solved the supply and demand problem of device, has alleviated the dependence for BJT pipe on the market.This utility model has applied in the high-power Shortwave Communication System, has improved the index performance of integrated communications system.
Four, description of drawings
Interconnect block diagram between each circuit part shown in Figure 1
Fig. 2 radio frequency amplifier section circuit diagram
Fig. 3 is a biasing keying unit circuit diagram
Fig. 4 is that power output detects schematic diagram
Fig. 5 is over-current detection protective circuit figure
Fig. 6 is power protecting circuit figure
Five, embodiment
Fig. 1 block diagram has provided the interconnected relationship between each circuit part; Amplifier section shown in Figure 2 is the core of whole module, also is the real part that realizes high-power amplification, and main devices is two MRF151 (or SD2933) field effect transistor.The utility model is provided with automatic level control circuit, is alc circuit that the radiofrequency signal of module input connects automatic level control circuit, and the control voltage end of automatic level control circuit connects power-sensing circuit.The radiofrequency signal of module input enters the promotion amplifier section, at first pass through alc circuit, ALC control voltage is exported from the standing wave ratio meter power detection, output is delivered to amplification module after control board amplifies, when voltage becomes timing, the diode V2 conducting gradually of series connection ground connection, the signal that is input to MRF151 (or SD2933) will diminish.Be divided into two power tubes of two-way supply through a coupler T1 then and amplify, be transferred to last final stage amplifier section through T2 again.Owing to adopted the class AB amplifying circuit, improve power utilization, but can produce the wave distortion phenomenon, so adopt negative-feedback circuit, sacrificed a part of power and improved waveform.Amplifying signal is by the synthetic output of T3 transmitter, and this level is amplified 24dB to signal.Amplifier section uses 48V direct current supply, has guaranteed powerful output.
Biasing keying unit shown in Figure 3 is the quiescent point setting that is used for field effect transistor.When keying signal is low level, diode V12 conducting, 28V exports 12V behind integrated package.Obtain the G step voltage of V1 again through V8, R34, R1, can obtain the G step voltage of V3 equally through V7, R23, R12.Adjust the quiescent point that potentiometer R34 and R23 just can be provided with field effect transistor V1 and V3 respectively.When keying signal is high level, not conducting of diode V12, this moment, the G step voltage of field effect transistor V1 and V3 was zero, amplifying circuit is inoperative.
It is detection to output signal that output shown in Figure 4 detects, through the detection of diode V6, again through an integrated package N2 amplify and R18 to obtain a magnitude of voltage be the power detection value, integrated package N2 multiplication factor can be by potentiometer R9 adjustment.After signal is exaggerated, obtain a low level simultaneously, make that power indication (being light-emitting diode V60) is bright through R17, N1, R19.When not having signal,, make power indication (being light-emitting diode V60) not work because of the effect of N1 makes that the two ends of V32 are high level all.
Over-current detection shown in Figure 5 is a protective circuit, and when blocks current was excessive, the positive and negative difference of current sampling will become greatly, and to V10 output, this moment, module will reduce input value minimizing electric current automatically, reached protective effect through R24, R25, R26, V9.Wherein the adjustable stream of haveing suffered of potentiometer R24 detects critical point.
Shown in Figure 6 is a power protecting circuit.When interlocking signal was high level, N1 made power-off through integrated package, and promptly the 50V DC power supply is disconnected, and amplifying circuit is inoperative, makes that simultaneously faulty indication (being light-emitting diode V59) is bright.When interlocking signal was low level, the 50V DC power supply was normal, and amplifying circuit is operate as normal also, made faulty indication (being light-emitting diode V59) not work.
We select two multiplication factors, the MRF151 field effect transistor of basically identical or SD2933 field effect transistor on the conducting voltage, and on feedback circuit, carry out meticulous device and select, the difference of feedback resistance guarantees in 0.05 Ω.Because strengthened balanced, symmetrical control to the two-way feedback circuit, and the excellent properties of MRF151 field effect transistor or SD2933 pipe itself, make the intermodulation of power amplifier and harmonic wave index improve greatly.
Output signal has been eliminated high order harmonic component through the filtering of low pass filter.Detect forward and reverse power by directional coupler, input signal is amplified decay, and give the complete machine controller data machine is controlled according to size.Also have temperature sensing circuit to prevent module because the overheated damage that causes.
Claims (6)
1, high-power FET power amplifier module, comprise that power amplification circuit, coupler and negative-feedback circuit constitute, it is characterized in that power amplification circuit is pair of MR F151 or SD2933 field effect transistor, the radio-frequency input signals of module is divided into the input that two-way connects MRF151 or SD2933 field effect transistor through a coupler parallel connection, supplying with two field effect transistor amplifies, the field effect transistor output signal is transferred to subordinate's load through coupler again, connects the input of two field-effect amplifiers as negative-feedback circuit from the coupler output feedback signal.
2, high-power FET power amplifier module according to claim 1 is characterized in that the biasing keying circuit that is provided with as the quiescent operation point voltage connects the field effect transistor biasing circuit.
3, high-power FET power amplifier module according to claim 1, it is characterized in that being provided with output detection circuit: output signal is connected to the detection diode, connects the magnitude of voltage that an amplifying circuit and a divider resistance obtain the power detection value again.
4, high-power FET power amplifier module according to claim 3: it is characterized in that described amplification circuit output end connects LED or buzzer.
5, high-power FET power amplifier module according to claim 1: it is characterized in that being provided with automatic level control circuit, the radiofrequency signal of module input connects automatic level control circuit, and the control voltage end of automatic level control circuit connects power-sensing circuit.
6, high-power FET power amplifier module according to claim 1: the difference of feedback resistance that it is characterized in that described feedback circuit is in 0.05 Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200425825U CN201122934Y (en) | 2007-11-19 | 2007-11-19 | High power field effect pipe power amplifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200425825U CN201122934Y (en) | 2007-11-19 | 2007-11-19 | High power field effect pipe power amplifier module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201122934Y true CN201122934Y (en) | 2008-09-24 |
Family
ID=40010175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200425825U Expired - Lifetime CN201122934Y (en) | 2007-11-19 | 2007-11-19 | High power field effect pipe power amplifier module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201122934Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296976A (en) * | 2012-02-29 | 2013-09-11 | Ge医疗系统环球技术有限公司 | Method, device and magnetic resonance equipment for stabilizing quiescent operating points of radio-frequency amplifiers |
-
2007
- 2007-11-19 CN CNU2007200425825U patent/CN201122934Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296976A (en) * | 2012-02-29 | 2013-09-11 | Ge医疗系统环球技术有限公司 | Method, device and magnetic resonance equipment for stabilizing quiescent operating points of radio-frequency amplifiers |
| CN103296976B (en) * | 2012-02-29 | 2018-02-16 | Ge医疗系统环球技术有限公司 | The method, apparatus and magnetic resonance equipment of the quiescent point of stable radio frequency amplifier |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20080924 |