CN206236955U - The eutectic structure of semiconductor laser chip encapsulation - Google Patents
The eutectic structure of semiconductor laser chip encapsulation Download PDFInfo
- Publication number
- CN206236955U CN206236955U CN201621277620.0U CN201621277620U CN206236955U CN 206236955 U CN206236955 U CN 206236955U CN 201621277620 U CN201621277620 U CN 201621277620U CN 206236955 U CN206236955 U CN 206236955U
- Authority
- CN
- China
- Prior art keywords
- chip
- metallic support
- graphite
- semiconductor laser
- eutectic structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model is related to a kind of eutectic structure of semiconductor laser chip encapsulation, it is characterised in that：Including the metallic support for laying reeded graphite base and be located in groove, golden soldering tablet, ceramic substrate and chip of laser have been sequentially stacked on the metallic support, golden soldering tablet is located on the metallic support and chip of laser side is provided with spacing use graphite piece, the graphite piece and chip of laser top are covered with graphite to be covered.It is reliable that the utility model can bond chip of laser, ceramic substrate and metallic support, so that the welded encapsulation flow for next step does early-stage preparations, the stove time of whole eutectic technology operation one can be controlled in 1 hour, and can be according to different Production requirements, 200 materials of operation 1 are processed every time, operational method is flexible, can be produced in enormous quantities again while high-performance laser chip electrical property is met.
Description
Technical field：
The utility model is related to a kind of eutectic structure of semiconductor laser chip encapsulation.
Background technology：
Traditional chip of laser is connected main using epoxy conductive adhesive process with base, and the resistivity of conducting resinl is high
（100-500uΩ）, thermal conductivity factor is small, therefore radiating is slow, and cohesive force is low, for large-power semiconductor chip of laser, heat conduction
Performance quality is a very important parameter, and the electrical property that it directly affects chip of laser is improved and reliability；
Eutectic technology refers to that at relatively low temperature, eutectic solder occurs the phenomenon of eutectic thing fusion, eutectic alloy
From solid state change to liquid, then by cooling and solidifying, 2 kinds of materials for making to nestle together are bonded together by solder sheet；Very
Empty nitrogen eutectic technology, refers under vacuum or nitrogen atmosphere, eutectic to be carried out to object, and it can suppress the oxygen of solder sheet
Change, it is to avoid after temperature rises to uniform temperature, when solder sheet is by solid-state dissolving band liquid, oxide-film remains to form cavity, so that
The effect that influence eutectic is bonded；
Compared to epoxy conductive adhesive process, eutectic technology has efficiency high, the main feature of rapid heat dissipation, therefore eutectic technology mesh
It is preceding to be applied to Electronic Packaging industry；In communication association area, it is necessary to high-power, the chip of laser of high reliability, such
Chip of laser is general all in 0.5mm2Hereinafter, the limitation due to eutectic fixture in itself, it is difficult to position 2mm2Following laser
Device chip, therefore application of the eutectic technology in chip of laser encapsulation is a problem demanding prompt solution.
Utility model content：
The purpose of this utility model is to provide a kind of eutectic structure of semiconductor laser chip encapsulation, the structure design
Rationally, the fuel factor in individual laser package component is advantageously reduced, the electrical property and reliability of laser is improved.
The technical solution of the utility model is：
The eutectic structure of the utility model semiconductor laser chip encapsulation, it is characterised in that：It is reeded including laying
Graphite base and the metallic support being located in groove, be sequentially stacked on the metallic support golden soldering tablet, ceramic substrate and
Chip of laser, is located at golden soldering tablet on the metallic support and chip of laser side is provided with spacing use graphite piece, described
Graphite piece and chip of laser top are covered with graphite to be covered.
Further, above-mentioned metallic support is L-type metallic support.
Further, the stainless steel latch for top pressure graphite piece is provided with above-mentioned graphite between lid and graphite piece.
Further, the depth of above-mentioned groove is 3-5mm, and the bottom transverse sheet of L-type metallic support is trapped in the groove, gold
Soldering tablet, ceramic substrate and chip of laser side are resisted against the riser of L-type metallic support.
Further, above-mentioned ceramic substrate be rectangular conduit, thereon, lower surface be covered with one layer of layer gold, layer gold thickness is more than
2um, golden soldering tablet and chip of laser are located at the upper and lower surface of ceramic substrate.
Further, a length of 5-6mm of above-mentioned ceramic substrate, a width of 2-4mm, a height of 1.5-3mm；L-type metallic support is long
5.5-8mm, 2.5-6mm wide, 5.5-8mm high, thickness in 0.5-1.5mm, and L-type metallic support riser center dig have circle
Hole, Circularhole diameter is 2.5-3.5mm.
Further, above-mentioned graphite base thickness 6-8mm, 300mm-400mm long, 200-300mm wide, the thereon quantity of groove
Between 60-100；Each groove 6-8mm long, 5-7mm wide, deep 3-5mm.
Further, the quantity of above-mentioned groove is between 60-200；Each groove bit length 6-8mm, 5-7mm wide, deep 3-5mm.
Further, above-mentioned graphite piece, thick 3mm-4mm, 5mm-8mm long, 2mm-3mm wide；Lid is provided with jack on graphite,
Jack quantity is 130-300, and jack is circular hole, a diameter of 0.5mm-2mm；The stainless steel latch is cylinder, length
20mm-40mm, a diameter of 0.5-2mm, front end is reduced step by step, and tip is designed to foremost.
The operating method of the eutectic structure of the utility model semiconductor laser chip encapsulation：
1) on chip mounter, first using the golden soldering tablet of suitable dimension, chip of laser is installed to ceramic substrate table
On face；
2) metallic support is put in the corresponding groove position of eutectic furnace bottom graphite base；
3) put in metallic support and select suitable gold soldering tablet；
4) toward putting the ceramic substrate with chip of laser in metallic support, and positioned with positioning graphite piece and completed；
5) added a cover above ceramic substrate and covered on the graphite with jack；
6) put stainless steel latch on lid on graphite, and allow stainless steel latch top in ceramic substrate, graphite piece；
7) eutectic furnace cavity is closed, and 150 degree is pre-heated under vacuum and nitrogen atmosphere, then be warmed up in a nitrogen atmosphere
Relevant temperature carries out eutectic；
8) cavity cools to less than 50 degree, and inflated with nitrogen to normal pressure closes nitrogen, opens cavity, takes out the complete metal of eutectic
Support, operation is completed.
The utility model has the advantage of：
It is reliable that the utility model can bond chip of laser, ceramic substrate and metallic support, to be next step
Welded encapsulation flow does early-stage preparations, and the stove time of whole eutectic technology operation one can be controlled in 1 hour, and can basis
Different Production requirements, processes 1-200 material of operation every time, and operational method is flexible, is meeting high-performance laser
Can be produced in enormous quantities again while chip electrical property.
Brief description of the drawings：
Fig. 1 is the front view of graphite base（It is not installed with other parts）；
Fig. 2 is the profile construction schematic diagram (being mounted with all parts) of the A-A of Fig. 1.
Specific embodiment：
The eutectic structure of the utility model semiconductor laser chip encapsulation, including the He of graphite base 2 for laying fluted 1
The metallic support 3 in groove 1 is located at, golden soldering tablet 4, ceramic substrate 5 and laser have been sequentially stacked on the metallic support 3
Chip 6, is located at golden soldering tablet on the metallic support 3 and chip of laser side is provided with spacing use graphite piece 7, the graphite
Part 7 and the top of chip of laser 6 are covered with lid 8 on graphite.
Further, in order to reasonable in design, above-mentioned metallic support 3 is L-type metallic support.
Further, the stainless steel latch 9 for top pressure graphite piece is provided with above-mentioned graphite between lid 8 and graphite piece 7.
Further, the depth of above-mentioned groove is 3-5mm, and the bottom transverse sheet 301 of L-type metallic support 3 is trapped in the groove 1
Interior, golden soldering tablet, ceramic substrate and chip of laser side are resisted against the riser 302 of L-type metallic support.
Further, in order to reasonable in design, above-mentioned ceramic substrate is rectangular conduit, thereon, lower surface be covered with one layer of layer gold,
Layer gold thickness is more than 2um, and golden soldering tablet and chip of laser are located at the upper and lower surface of ceramic substrate.
Further, a length of 5-6mm of above-mentioned ceramic substrate, a width of 2-4mm, a height of 1.5-3mm；L-type metallic support is long
5.5-8mm, 2.5-6mm wide, 5.5-8mm high, thickness in 0.5-1.5mm, and L-type metallic support riser center dig have circle
Hole, Circularhole diameter is 2.5-3.5mm.
Further, above-mentioned graphite base thickness 6-8mm, 300mm-400mm long, 200-300mm wide, the thereon quantity of groove
Between 60-100；Each groove 6-8mm long, 5-7mm wide, deep 3-5mm.
Further, the quantity of above-mentioned groove is between 60-200；Each groove bit length 6-8mm, 5-7mm wide, deep 3-5mm.
Further, above-mentioned graphite piece, thick 3mm-4mm, 5mm-8mm long, 2mm-3mm wide；Lid is provided with jack on graphite,
Jack quantity is 130-300, and jack is circular hole, a diameter of 0.5mm-2mm；The stainless steel latch is cylinder, length
20mm-40mm, a diameter of 0.5-2mm, front end is reduced step by step, and tip is designed to foremost.
The operating method of the eutectic structure of the utility model semiconductor laser chip encapsulation：
1) on chip mounter, first using the golden soldering tablet of suitable dimension, chip of laser is installed to ceramic substrate table
On face；
2) metallic support is put in the corresponding groove position of eutectic furnace bottom graphite base；
3) put in metallic support and select suitable gold soldering tablet；
4) toward putting the ceramic substrate with chip of laser in metallic support, and positioned with positioning graphite piece and completed；
5) added a cover above ceramic substrate and covered on the graphite with jack；
6) put stainless steel latch on lid on graphite, and allow stainless steel latch top in ceramic substrate, graphite piece；
7) eutectic furnace cavity is closed, and 150 degree is pre-heated under vacuum and nitrogen atmosphere, then be warmed up in a nitrogen atmosphere
Relevant temperature carries out eutectic；
8) cavity cools to less than 50 degree, and inflated with nitrogen to normal pressure closes nitrogen, opens cavity, takes out the complete metal of eutectic
Support, operation is completed.
The utility model has the advantage of：
It is reliable that the utility model can bond chip of laser, ceramic substrate and metallic support, to be next step
Welded encapsulation flow does early-stage preparations, and the stove time of whole eutectic technology operation one can be controlled in 1 hour, and can basis
Different Production requirements, processes 1-200 material of operation every time, and operational method is flexible, is meeting high-performance laser
Can be produced in enormous quantities again while chip electrical property.
Claims (9)
1. the eutectic structure that a kind of semiconductor laser chip is encapsulated, it is characterised in that：Including laying reeded graphite base
With the metallic support being located in groove, golden soldering tablet, ceramic substrate and laser core are sequentially stacked on the metallic support
Piece, is located at golden soldering tablet on the metallic support and chip of laser side is provided with spacing use graphite piece, the graphite piece and
Chip of laser top is covered with graphite and covers.
2. the eutectic structure that semiconductor laser chip is encapsulated according to claim 1, it is characterised in that：The metallic support
It is L-type metallic support.
3. the eutectic structure that semiconductor laser chip is encapsulated according to claim 1, it is characterised in that：Covered on the graphite
The stainless steel latch for top pressure graphite piece is provided between graphite piece.
4. the eutectic structure that semiconductor laser chip is encapsulated according to claim 2, it is characterised in that：The depth of the groove
It is 3-5mm to spend, and the bottom transverse sheet of L-type metallic support is trapped in the groove, golden soldering tablet, ceramic substrate and chip of laser
Side is resisted against the riser of L-type metallic support.
5. the eutectic structure that semiconductor laser chip is encapsulated according to claim 3, it is characterised in that：The ceramic substrate
Be rectangular conduit, thereon, lower surface be covered with one layer of layer gold, layer gold thickness is more than 2um, and golden soldering tablet and chip of laser are located at
The upper and lower surface of ceramic substrate.
6. the eutectic structure that semiconductor laser chip is encapsulated according to claim 1, it is characterised in that：The ceramic substrate
A length of 5-6mm, a width of 2-4mm, a height of 1.5-3mm；L-type metallic support 5.5-8mm long, 2.5-6mm wide, 5.5-8mm high, thickness
In 0.5-1.5mm, and L-type metallic support riser center dig have circular hole, Circularhole diameter is 2.5-3.5mm.
7. the eutectic structure that semiconductor laser chip is encapsulated according to claim 1, it is characterised in that：The graphite base
Thick 6-8mm, 300mm-400mm long, 200-300mm wide, the quantity of groove is between 60-100 thereon；Each groove 6-8mm long,
5-7mm wide, deep 3-5mm.
8. the eutectic structure that semiconductor laser chip is encapsulated according to claim 1, it is characterised in that：The number of the groove
Amount is between 60-200；Each groove bit length 6-8mm, 5-7mm wide, deep 3-5mm.
9. the eutectic structure that semiconductor laser chip is encapsulated according to claim 3, it is characterised in that：The graphite piece,
Thick 3mm-4mm, 5mm-8mm long, 2mm-3mm wide；Lid is provided with jack on graphite, and jack quantity is 130-300, and jack is circle
Hole, a diameter of 0.5mm-2mm；The stainless steel latch is cylinder, length 20mm-40mm, a diameter of 0.5-2mm, front end by
Level is reduced, and tip is designed to foremost.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621277620.0U CN206236955U (en) | 2016-11-26 | 2016-11-26 | The eutectic structure of semiconductor laser chip encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621277620.0U CN206236955U (en) | 2016-11-26 | 2016-11-26 | The eutectic structure of semiconductor laser chip encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206236955U true CN206236955U (en) | 2017-06-09 |
Family
ID=58981224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621277620.0U Active CN206236955U (en) | 2016-11-26 | 2016-11-26 | The eutectic structure of semiconductor laser chip encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206236955U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707524A (en) * | 2019-10-17 | 2020-01-17 | 江西骏川半导体设备有限公司 | Laser diode is unable adjustment base for paster |
| CN111633297A (en) * | 2020-06-10 | 2020-09-08 | 福建火炬电子科技股份有限公司 | Semi-automatic production jig and welding method for bracket ceramic capacitor |
-
2016
- 2016-11-26 CN CN201621277620.0U patent/CN206236955U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707524A (en) * | 2019-10-17 | 2020-01-17 | 江西骏川半导体设备有限公司 | Laser diode is unable adjustment base for paster |
| CN111633297A (en) * | 2020-06-10 | 2020-09-08 | 福建火炬电子科技股份有限公司 | Semi-automatic production jig and welding method for bracket ceramic capacitor |
| CN111633297B (en) * | 2020-06-10 | 2023-08-11 | 福建火炬电子科技股份有限公司 | Semi-automatic production jig for bracket ceramic capacitor and welding method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2005470B1 (en) | Lead frame based, over-molded semiconductor package with integrated through hole technology (tht) heat spreader pin(s) and associated method of manufacturing | |
| US9984951B2 (en) | Sintered multilayer heat sinks for microelectronic packages and methods for the production thereof | |
| CN104392942A (en) | Method for encapsulating high-power IGBT device through performing non-pressure low-temperature sintering on nano silver soldering paste | |
| CN107210289A (en) | Semiconductor devices | |
| CN206236955U (en) | The eutectic structure of semiconductor laser chip encapsulation | |
| CN115116867A (en) | Sintered silver cushion block with low modulus and high heat conductivity and manufacturing device and method thereof | |
| JP2002026044A (en) | Semiconductor device, its manufacturing method, circuit substrate and electronic apparatus | |
| CN101882606B (en) | Heat-dissipation semiconductor encapsulation structure and manufacturing method thereof | |
| CN206194730U (en) | Power module that chip upper surface flushed | |
| CN107845610B (en) | Board structure and preparation method thereof | |
| CN107919426B (en) | Ceramic base for inorganic packaging of UV LED and manufacturing method thereof | |
| CN100573856C (en) | Promote the rewinding type semiconductor packaging construction of heat sinking benefit | |
| CN206059374U (en) | High-power surface mount elements and its processing tool | |
| CN103094127B (en) | Pasting-mounted clamp of direct bonding copper base plate used for packing insulated gate bipolar transistor (IGBT) module | |
| CN109449125B (en) | Double-row structure internal insulation type plastic package semiconductor device and manufacturing method thereof | |
| CN202678302U (en) | Fanout-type wafer level chip packaging structure | |
| CN208767285U (en) | A kind of two-row structure internal insulation type plastic semiconductor element | |
| CN204809217U (en) | Carbonization silicon diode's package frame | |
| CN203339149U (en) | QFN packaging structure | |
| CN204596842U (en) | A kind of ESOP8 lead frame of middle great power LED driving chip | |
| CN201608172U (en) | Packaging carrier plate structure | |
| CN219715134U (en) | Be used for nanometer silver soldering paste thermal fatigue test structure | |
| CN102510005A (en) | Laser diode packaging module and packaging method | |
| CN103219251A (en) | Method for packaging large-size chip by using metal-based nano fiber composite heat dissipation material | |
| CN113035723B (en) | High-temperature-resistant packaging method for silicon carbide diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |