CN206225987U - Under-voltage detection switch circuit based on non-linear to voltage element - Google Patents
Under-voltage detection switch circuit based on non-linear to voltage element Download PDFInfo
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- CN206225987U CN206225987U CN201620683453.3U CN201620683453U CN206225987U CN 206225987 U CN206225987 U CN 206225987U CN 201620683453 U CN201620683453 U CN 201620683453U CN 206225987 U CN206225987 U CN 206225987U
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Abstract
The utility model discloses the under-voltage detection switch circuit based on non-linear to voltage element；Its second capacitor is in parallel with the second voltage-regulator diode, the parallel connected end of the second voltage-regulator diode negative electrode of correspondence is connected with the control pole or grid of the second thyristor, and the parallel connected end of the second voltage-regulator diode anode of correspondence is connected with the negative electrode or source electrode of the second thyristor；Non-linear to voltage element is connected with one end after the 4th resistor in series with one end of switch, and the other end is connected with the control pole or grid of the second thyristor；One end of first resistor device is connected with one end of switch, and the other end is connected with the anode of the second thyristor or drain electrode；The utility model realizes under-voltage Detection ＆ Controling, eliminates operation amplifier circuit and its required dc source, without Anti-interference Design is increased, simplifies circuit structure, reduces cost of manufacture, reduces small product size.
Description
Technical field
The utility model is related to under-voltage to detect and on-off circuit, more particularly to a kind of owing based on non-linear to voltage element
Voltage detecting and on-off circuit.
Background technology
Electronic equipment must run under certain supply voltage, can otherwise influence electric equipment to run well or even cause tight
Weight accident.After supply voltage drops to less than the 80% of rated voltage, the rotating speed of motor will be caused to be decreased obviously, so that quilt
Compel stalling, motor is burnt because of stall.Meanwhile, too low supply voltage will also cause releasing for low voltage switch contact
Put, make control circuit cisco unity malfunction, cause personal injury and the damage of plant equipment.For this need to take necessary protection to arrange
Apply, power supply is cut off rapidly, low-voltage protection is essential in power-supply system.
Using voltage detecting circuit, when detecting that electric circuit inspection is less than assigned voltage lower limit to supply voltage, output signal
Trigger switch disconnects power supply, can reduce loss, it is to avoid accident occurs.
Prior art generally uses operational amplifier to be detected to voltage for the voltage comparator circuit of base, but this electricity
There is following deficiency in road：Easily it is disturbed, it is necessary to increase Anti-interference Design；Need configuring direct current working power；Cost of manufacture is higher.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of prior art, the purpose of this utility model is to provide one kind simply may be used
By, solution with low cost：Supply voltage is detected using the C-V characteristic of non-linear to voltage element, is touched according to voltage levels
The semiconductor switch device of hair or shut-off in electric power loop is so as to the load break-make in control loop.
The purpose of this utility model is achieved through the following technical solutions：
A kind of under-voltage detection switch circuit based on non-linear to voltage element, including the first thyristor,
Two thyristors, non-linear to voltage element, first resistor device, second resistance device, 3rd resistor device, the 4th resistor,
First voltage-regulator diode, the second voltage-regulator diode, the first capacitor, the second capacitor and switch；Second capacitor with
The parallel connection of second voltage-regulator diode, the parallel connected end of the second voltage-regulator diode negative electrode of correspondence and the control pole of the second thyristor
Or grid is connected, the parallel connected end of the second voltage-regulator diode anode and the negative electrode or source electrode phase of the second thyristor are corresponded to
Even；Non-linear to voltage element is connected with one end after the 4th resistor in series with one end of switch, and the other end is opened with the second semiconductor
The control pole or grid for closing element are connected；One end of first resistor device is connected with one end of switch, the other end and the second semiconductor
The anode of switch element or drain electrode are connected；The anode or drain electrode phase of one end of second resistance device and the second thyristor
Even, the other end is connected with the negative electrode or source electrode of the second thyristor；Opened with the second semiconductor one end of 3rd resistor device
The anode or drain electrode for closing element are connected, and the other end is connected with the control pole or grid of the first thyristor；First electric capacity
Device is in parallel with the first voltage-regulator diode, the control of the parallel connected end and the first thyristor of the first voltage-regulator diode negative electrode of correspondence
Pole processed or grid are connected, and correspond to the parallel connected end of the first voltage-regulator diode anode and the negative electrode or source electrode of the first thyristor
It is connected；Load one end is connected with the anode of the first thyristor or drain electrode, and the other end is connected with one end of switch；Switch
The other end be connected with power supply one end, the other end of power supply is connected with the negative electrode or source electrode of the first thyristor；First
The negative electrode or source electrode of thyristor are connected with the negative electrode of the second thyristor 2 or source electrode.
Further to realize the utility model purpose, it is preferable that first thyristor and the second semiconductor
Switch element is all one-way SCR, bidirectional triode thyristor or FET.
Preferably, the non-linear to voltage element is piezo-resistance or semiconductor instantaneous voltage restraint component.
Preferably, the first resistor device and second resistance device composition divider；When the second one-way SCR is not turned on,
Trigger voltage of the partial pressure more than the first one-way SCR on second resistance device.
Preferably, the resistance of the 3rd resistor device is 10 times of the resistance of second resistance device.
Preferably, 2.0 times of the pressure-resistant index of first one-way SCR more than supply voltage peak value.
Preferably, first one-way SCR chooses controllable silicon of the pressure-resistant index more than 800V；Second one-way SCR
Choose controllable silicon of the pressure-resistant index more than 25V.
Preferably, the semiconductor instantaneous voltage restraint component is bidirectional semiconductor Transient Suppression Diode.
Preferably, the conducting voltage of the bidirectional semiconductor Transient Suppression Diode is 250V.
Preferably, the piezo-resistance is Zinc-oxide piezoresistor, and the pressure sensitive voltage of Zinc-oxide piezoresistor is 240V.
1 (thyristor 1) in 2 thyristors of the utility model is connected to after being concatenated with load
Both ends of power, the break-make of another thyristor (thyristor 2) is controlled by the non-linear to voltage element.
When power voltage insufficient so as to during non-linear to voltage element conductive, switch on power, the second thyristor is not
Conducting, the first thyristor obtains trigger voltage and turns on through resistor voltage divider circuit, so that loading to obtain electric work.
When supply voltage reaches certain value, switch on power, non-linear to voltage element conductive, the second semiconductor switch of triggering unit
Part is turned on so that resistor voltage divider circuit intrinsic standoff ratio changes, and is made the trigger voltage of the first thyristor not enough and is ended, this
When the load connected with thyristor 1 can not obtain voltage.
The voltage-regulator diode of the utility model first and the second voltage-regulator diode are respectively used to the first semiconductor switch of protection unit
Part and the second thyristor, make thyristor fail in order to avoid trigger voltage is too high.
Compared with prior art, the utility model has advantages below and beneficial effect：
The utility model realizes under-voltage Detection ＆ Controling using the strong nonlinearity characteristic of non-linear to voltage element, and existing
There is technology to compare, due to eliminating operation amplifier circuit and its required dc source, without increase Anti-interference Design, so
Circuit structure is simplified, cost of manufacture is reduced, small product size is reduced.
Brief description of the drawings
Under-voltage based on non-linear to voltage element detections and on-off circuit connection diagram of the Fig. 1 for embodiment 1.
Under-voltage based on non-linear to voltage element detections and on-off circuit connection diagram of the Fig. 2 for embodiment 2.
Under-voltage based on non-linear to voltage element detections and on-off circuit connection diagram of the Fig. 3 for embodiment 3.
Specific embodiment
To more fully understand the utility model, the utility model is further said with reference to the accompanying drawings and examples
It is bright, but implementation method not limited to this of the present utility model.
Embodiment 1
As shown in figure 1, a kind of under-voltage based on non-linear to voltage element is detected and on-off circuit, including first unidirectionally may be used
Control silicon SCR1, the second unidirectional controllable silicon S CR2, piezo-resistance Rv, first resistor device R1, second resistance device R2,3rd resistor device
R3, the 4th resistor R4, the first voltage-regulator diode D1, the second voltage-regulator diode D2, the first capacitor C1, the second capacitor C2 with
And switch K.Each circuit element connected mode is：Second capacitor C2 is in parallel with the second voltage-regulator diode D2, the second voltage stabilizing of correspondence
The parallel connected end of diode D2 negative electrodes is connected with the control pole of the second unidirectional controllable silicon S CR2, the second voltage-regulator diode D2 anodes of correspondence
Parallel connected end be connected with the negative electrode of the second unidirectional controllable silicon S CR2；Piezo-resistance Rv connected with the 4th resistor R4 after one end with open
One end connection of K is closed, the other end is connected with the control pole of the second unidirectional controllable silicon S CR2；One end of first resistor device R1 and switch
One end of K is connected, and the other end is connected with the anode of the second unidirectional controllable silicon S CR2；One end of second resistance device R2 is unidirectional with second
The anode of controllable silicon SCR 2 is connected, and the other end is connected with the negative electrode of the second unidirectional controllable silicon S CR2；One end of 3rd resistor device R3
Anode with the second unidirectional controllable silicon S CR2 is connected, and the other end is connected with the control pole of the first unidirectional controllable silicon S CR1；First electricity
Container C1 is in parallel with the first voltage-regulator diode D1, the parallel connected end and the first one-way SCR of the first voltage-regulator diode D1 negative electrodes of correspondence
The control pole of SCR1 is connected, and corresponds to the parallel connected end of the first voltage-regulator diode D1 anodes and the negative electrode phase of the first unidirectional controllable silicon S CR1
Even；Load one end is connected with the anode of the first unidirectional controllable silicon S CR1, and the other end is connected with one end of switch K；Switch K's is another
End is connected with power supply one end, and the other end of power supply is connected with the negative electrode of the first unidirectional controllable silicon S CR1；First one-way SCR
The negative electrode of SCR1 is connected with the negative electrode of the second unidirectional controllable silicon S CR2.
In Fig. 1, first resistor device R1 and second resistance device R2 composition divider, also, intrinsic standoff ratio is adjusted to when second
When unidirectional controllable silicon S CR2 is not turned on, trigger voltage of the partial pressure more than the first unidirectional controllable silicon S CR1 on second resistance device R2.
The resistance of 3rd resistor device R3 is 10 times of the resistance of second resistance device R2, makes 3rd resistor device R3 as the first one-way SCR
The trigger current path of SCR1, while on the influence of first resistor device R1 and second resistance device R2 composition divider circuit parameters very
It is small.4th resistor R4 has connected metering function with piezo-resistance Rv, to protect piezo-resistance Rv.First capacitor C1 and first
Voltage-regulator diode D1 is connected in parallel between the first one-way SCR control pole and negative electrode, on the one hand limitation trigger signal voltage, protection
First unidirectional controllable silicon S CR1, on the other hand caning absorb interference signal prevents false triggering.Second capacitor C2 and the second voltage stabilizing two
Pole pipe D2 is connected in parallel between the second unidirectional controllable silicon S CR2 control poles and negative electrode, on the one hand limitation trigger signal voltage, protection the
Two unidirectional controllable silicon S CR2, on the other hand caning absorb interference signal prevents false triggering.The first pressure-resistant indexs of unidirectional controllable silicon S CR1
Should be greater than 2.0 times of supply voltage peak value.The present embodiment uses pressure-resistant 800V controllable silicons；Second unidirectional controllable silicon S CR2 chooses resistance to
Controllable silicon of the pressure index more than 25V.
Power end connection power frequency regulated power supply in the present embodiment, the pressure sensitive voltage of the piezo-resistance Rv for using is 240V, when
During by below power frequency regulated power supply voltage Tiao Jiedao 175VAC, switch on power (switch K closes a floodgate), piezo-resistance Rv leakage current very littles
(being not turned on), the second unidirectional controllable silicon S CR2 is not turned on, and the partial pressure on second resistance device R2 triggers the first unidirectional controllable silicon S CR1
Conducting, that is connected with the first unidirectional controllable silicon S CR1 loads electric and works.
When by more than power frequency regulated power supply voltage Tiao Jiedao 178V, switch on power (switch K closes a floodgate), flows through piezo-resistance
The leakage current of Rv turns on the second unidirectional controllable silicon S of controllable silicon CR2, the intrinsic standoff ratio of first resistor device R1 and second resistance device R2 because
The conducting of the second unidirectional controllable silicon S CR2 and change, the partial pressure on second resistance device R2 less than the first unidirectional controllable silicon S CR1 touch
Generate electricity pressure, and now, the first unidirectional controllable silicon S CR1 is in cut-off state, and the load connected with the first unidirectional controllable silicon S CR1 can not
Obtain operating voltage.
When supply voltage regulation is to 175~178VAC scopes, switch on power (switch K closes a floodgate), the second one-way SCR
The on off operating mode of SCR2 does not know, and the on off operating mode of the first unidirectional controllable silicon S CR1 does not know yet, this uncertain voltage range
It is decided by the factors such as the parameters decentralization and work repeatability of two controllable silicons.Supply voltage is this in 175~178VAC scopes
Embodiment under-voltage protection threshold voltage ranges.
The present embodiment realizes the Detection ＆ Controling of power supply under-voltage, when lower voltage limit of the supply voltage less than design,
Load electric, load can be relay or breaker coil, relay or circuit breaker trip are utilized when supply voltage is too low
Electric power loop is protecting electrical equipment.
Embodiment 2
As shown in Fig. 2 the circuit connecting mode of the present embodiment is same as Example 1, but, the present embodiment is with two-way controllable
Silicon TRIAC replaces the first unidirectional controllable silicon S CR1 in embodiment 1, replaces real with bidirectional semiconductor Transient Suppression Diode TVS
Apply the piezo-resistance Rv in example 1.
The first unidirectional controllable silicon S CR1 phases in the present embodiment in the pressure-resistant index of bidirectional triode thyristor TRIAC and embodiment 1
Together；The conducting voltage of bidirectional semiconductor Transient Suppression Diode TVS is 250V；Other elements are same as Example 1.
The power end connection power frequency regulated power supply of the present embodiment.
When by below power frequency regulated power supply voltage Tiao Jiedao 183VAC, switch on power (switch K closes a floodgate), bidirectional semiconductor
Transient Suppression Diode TVS leakage currents very little (being not turned on), unidirectional controllable silicon S CR2 is not turned on, the partial pressure on second resistance device R2
More than the trigger voltage of bidirectional triode thyristor TRIAC, now, bidirectional triode thyristor TRIAC conductings are connected with bidirectional triode thyristor TRIAC
Load electric and work.
When by more than power frequency regulated power supply voltage Tiao Jiedao 187V, switch on power (switch K closes a floodgate), flows through semiconductor wink
The leakage current that state suppresses diode TVS turns on unidirectional controllable silicon S CR2, the partial pressure of first resistor device R1 and second resistance device R2
Than changing because of the conducting of unidirectional controllable silicon S CR2, triggering of the partial pressure on second resistance device R2 less than bidirectional triode thyristor TRIAC
Voltage, bidirectional triode thyristor TRIAC cut-offs, the load connected with bidirectional triode thyristor TRIAC can not obtain operating voltage.
When supply voltage regulation is to 183~187VAC scopes, switch on power (switch K closes a floodgate), unidirectional controllable silicon S CR2
On off operating mode do not know, the on off operating mode of bidirectional triode thyristor TRIAC does not know yet, and this uncertain voltage range is decided by two
The factors such as the parameters decentralization and work repeatability of controllable silicon.Supply voltage is in 183~187VAC scopes for the present embodiment is owed
Pressure protection threshold voltage ranges.
In the same manner as in Example 1, the present embodiment also achieves the Detection ＆ Controling of power supply under-voltage, is set when supply voltage is less than
During the lower voltage limit of meter, load electric, load can be relay or breaker coil, relay is utilized when supply voltage is too low
Device or circuit breaker trip electric power loop are protecting electrical equipment.
Embodiment 3
As shown in figure 3, the circuit connecting mode of the present embodiment is same as Example 1, but, the present embodiment is with N-channel
Effect pipe NMOS replaces the second unidirectional controllable silicon S CR2 in embodiment 1.Replacing connected mode is：The N-channel of the present embodiment
Source S, drain D, the grid G of effect pipe NMOS correspond to respectively the negative electrode of the second unidirectional controllable silicon S CR2 in embodiment 1, anode,
Control pole.
The second unidirectional controllable silicon S CR2 in the present embodiment in the pressure-resistant index of N-channel FET NMOS and embodiment 1
Identical, other elements are same as Example 1.
The power end connection power frequency regulated power supply of the present embodiment, in the same manner as in Example 1, the piezo-resistance that the present embodiment is used
The pressure sensitive voltage of Rv is still 240V.
When by below power frequency regulated power supply voltage Tiao Jiedao 175VAC, switch on power (switch K closes a floodgate), piezo-resistance Rv
Leakage current very little (is not turned on), and N-channel FET NMOS is not turned on, first resistor device R1 and second resistance device R2 composition partial pressures
Device, trigger voltage of the partial pressure more than controllable silicon SCR 1 on second resistance device R2, controllable silicon SCR 1 is turned on, gone here and there with controllable silicon SCR 1
Connection is loaded electric and worked.
When by more than power frequency regulated power supply voltage Tiao Jiedao 178V, switch on power (switch K closes a floodgate), flows through piezo-resistance
The leakage current of Rv turns on N-channel FET NMOS, and the intrinsic standoff ratio of first resistor device R1 and second resistance device R2 is because of N-channel
The conducting of effect pipe NMOS and change, the partial pressure on second resistance device R2 less than controllable silicon SCR 1 trigger voltage, controllable silicon
SCR1 ends, and the load connected with controllable silicon SCR 1 can not obtain operating voltage.
When supply voltage regulation is to 175~178VAC scopes, switch on power (switch K closes a floodgate), N-channel FET
The on off operating mode of NMOS does not know, and the on off operating mode of controllable silicon SCR 1 does not know yet, and this uncertain voltage range is decided by can
Control the factors such as the parameters decentralization and work repeatability of silicon SCR1 and N-channel FET NMOS.Supply voltage 175~
178VAC scopes are the present embodiment under-voltage protection threshold voltage ranges.
In the same manner as in Example 1, the present embodiment also achieves the Detection ＆ Controling of power supply under-voltage, is set when supply voltage is less than
During the lower voltage limit of meter, load electric, load can be relay or breaker coil, relay is utilized when supply voltage is too low
Device or circuit breaker trip electric power loop are protecting electrical equipment.
Above-described embodiment is the utility model preferably implementation method, but implementation method of the present utility model is not by described
The limitation of embodiment, it is other it is any without departing from the change made under Spirit Essence of the present utility model and principle, modify, replace
Generation, combination, simplification, should be equivalent substitute mode, be included within protection domain of the present utility model.
Claims (10)
1. the under-voltage detection switch circuit of non-linear to voltage element is based on, it is characterised in that including the first semiconductor switch unit
Part, the second thyristor, non-linear to voltage element, first resistor device, second resistance device, 3rd resistor device, the 4th electricity
Resistance device, the first voltage-regulator diode, the second voltage-regulator diode, the first capacitor, the second capacitor and switch；Second electric capacity
Device is in parallel with the second voltage-regulator diode, the control of the parallel connected end and the second thyristor of the second voltage-regulator diode negative electrode of correspondence
Pole processed or grid are connected, and correspond to the parallel connected end of the second voltage-regulator diode anode and the negative electrode or source electrode of the second thyristor
It is connected；Non-linear to voltage element and one end after the 4th resistor in series are connected with one end of switch, the other end and the second semiconductor
The control pole or grid of switch element are connected；One end of first resistor device is connected with one end of switch, and the other end is led with the second half
The anode of body switch element or drain electrode are connected；The anode or drain electrode phase of one end of second resistance device and the second thyristor
Even, the other end is connected with the negative electrode or source electrode of the second thyristor；Opened with the second semiconductor one end of 3rd resistor device
The anode or drain electrode for closing element are connected, and the other end is connected with the control pole or grid of the first thyristor；First electric capacity
Device is in parallel with the first voltage-regulator diode, the control of the parallel connected end and the first thyristor of the first voltage-regulator diode negative electrode of correspondence
Pole processed or grid are connected, and correspond to the parallel connected end of the first voltage-regulator diode anode and the negative electrode or source electrode of the first thyristor
It is connected；Load one end is connected with the anode of the first thyristor or drain electrode, and the other end is connected with one end of switch；Switch
The other end be connected with power supply one end, the other end of power supply is connected with the negative electrode or source electrode of the first thyristor；First
The negative electrode or source electrode of thyristor are connected with the second thyristor negative electrode or source electrode.
2. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 1, it is characterised in that institute
It is all one-way SCR, bidirectional triode thyristor or FET to state the first thyristor and the second thyristor；
When the first thyristor and the second thyristor all be one-way SCR when, the first thyristor and
Second thyristor is respectively the first one-way SCR and the second one-way SCR.
3. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 1, it is characterised in that institute
Non-linear to voltage element is stated for piezo-resistance or semiconductor instantaneous voltage restraint component.
4. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 2, it is characterised in that institute
State first resistor device and second resistance device composition divider；When the second one-way SCR is not turned on, dividing on second resistance device
Trigger voltage of the pressure more than the first one-way SCR.
5. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 1, it is characterised in that institute
The resistance for stating 3rd resistor device is 10 times of the resistance of second resistance device.
6. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 2, it is characterised in that institute
State 2.0 times of pressure-resistant index more than supply voltage peak value of the first one-way SCR.
7. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 6, it is characterised in that institute
State the first one-way SCR and choose controllable silicon of the pressure-resistant index more than 800V；Second one-way SCR is chosen pressure-resistant index and is more than
The controllable silicon of 25V.
8. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 3, it is characterised in that institute
Semiconductor instantaneous voltage restraint component is stated for bidirectional semiconductor Transient Suppression Diode.
9. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 8, it is characterised in that institute
The conducting voltage for stating bidirectional semiconductor Transient Suppression Diode is 250V.
10. the under-voltage detection switch circuit based on non-linear to voltage element according to claim 3, it is characterised in that
The piezo-resistance is Zinc-oxide piezoresistor, and the pressure sensitive voltage of Zinc-oxide piezoresistor is 240V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620683453.3U CN206225987U (en) | 2016-06-29 | 2016-06-29 | Under-voltage detection switch circuit based on non-linear to voltage element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620683453.3U CN206225987U (en) | 2016-06-29 | 2016-06-29 | Under-voltage detection switch circuit based on non-linear to voltage element |
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| CN206225987U true CN206225987U (en) | 2017-06-06 |
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| CN201620683453.3U Expired - Fee Related CN206225987U (en) | 2016-06-29 | 2016-06-29 | Under-voltage detection switch circuit based on non-linear to voltage element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159889A (en) * | 2016-06-29 | 2016-11-23 | 华南理工大学 | A kind of under-voltage detection on-off circuit based on non-linear to voltage element |
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2016
- 2016-06-29 CN CN201620683453.3U patent/CN206225987U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159889A (en) * | 2016-06-29 | 2016-11-23 | 华南理工大学 | A kind of under-voltage detection on-off circuit based on non-linear to voltage element |
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Granted publication date: 20170606 Termination date: 20210629 |