CN205846698U - Earth leakage circuit breaker with overvoltage protection and undervoltage protection - Google Patents

Earth leakage circuit breaker with overvoltage protection and undervoltage protection Download PDF

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CN205846698U
CN205846698U CN201620715352.XU CN201620715352U CN205846698U CN 205846698 U CN205846698 U CN 205846698U CN 201620715352 U CN201620715352 U CN 201620715352U CN 205846698 U CN205846698 U CN 205846698U
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diode
voltage
resistance
thyristor
resistor
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卢振亚
王静
邓腾飞
谢畅华
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South China University of Technology SCUT
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Abstract

本实用新型公开了具有过电压保护和欠电压保护的漏电断路器,其零序电流互感器输出端一端连接在整流桥堆输出端负极,另一端连接第四二极管的正极,第四二极管的负极与第五电阻一端相连,第五电阻的另一端与第一半导体开关元件的控制极或栅极相连;第一导体开关元件的阳极与整流桥堆输出端正极相连,第一半导体开关元件的阴极与整流桥堆输出端负极相连;第二电容器两端分别与第一半导体开关元件的阴极或源极以及控制极或删除相连;第二二极管与第四电阻并联,且对应第二二极管的正极的并联端与第一半导体开关元件的阴极相连。本实用新型不仅能够在线路发生漏电时断开电源以保护人身安全,还可以在电源电压过压或欠压时断开,避免发生事故。

The utility model discloses a leakage circuit breaker with overvoltage protection and undervoltage protection. One end of the output end of the zero-sequence current transformer is connected to the negative pole of the output end of the rectifier bridge stack, and the other end is connected to the positive pole of the fourth diode. The negative pole of the pole tube is connected to one end of the fifth resistor, and the other end of the fifth resistor is connected to the control pole or grid of the first semiconductor switching element; the anode of the first conductor switching element is connected to the positive pole of the output terminal of the rectifier bridge stack, and the first semiconductor The cathode of the switching element is connected to the negative pole of the output terminal of the rectifier bridge stack; the two ends of the second capacitor are respectively connected to the cathode or source of the first semiconductor switching element and the control pole or delete; the second diode is connected in parallel with the fourth resistor, and the corresponding The parallel terminal of the anode of the second diode is connected to the cathode of the first semiconductor switching element. The utility model can not only cut off the power supply to protect personal safety when electric leakage occurs in the line, but also can cut off the power supply voltage when the voltage is overvoltage or undervoltage, so as to avoid accidents.

Description

具有过电压保护和欠电压保护的漏电断路器Earth leakage circuit breaker with overvoltage protection and undervoltage protection

技术领域technical field

本实用新型涉及漏电断路器,特别涉及一种带过压保护功能和欠电压保护功能的漏电断路器。The utility model relates to a leakage circuit breaker, in particular to a leakage circuit breaker with overvoltage protection function and undervoltage protection function.

背景技术Background technique

漏电断路器(或称漏电开关)是普遍采用的低压配电开关电器,用于保护人身安全。Leakage circuit breakers (or leakage switches) are commonly used low-voltage power distribution switching devices to protect personal safety.

由于供电网故障、设备投切、错相、线路谐振等原因,常会导致供电线路发生工频过电压故障,工频过电压会使用电设备过负荷甚至烧毁。Due to power supply network failure, equipment switching, phase error, line resonance and other reasons, power frequency overvoltage faults often occur on power supply lines, and power frequency overvoltage will overload or even burn electrical equipment.

另一方面,由于供电系统自身负荷问题或故障,可能使得电源电压降低,当电源电压下降到额定电压的80%以下后,将导致电动机的转速明显下降,以致被迫停转,使电动机因堵转而烧毁。同时,过低的电源电压还将造成低压电器开关触点的释放,使控制电路不能正常工作,造成人身事故和机械设备的损坏。On the other hand, due to the load problem or failure of the power supply system itself, the power supply voltage may drop. When the power supply voltage drops below 80% of the rated voltage, the motor speed will drop significantly, so that it will be forced to stop, causing the motor to stop due to blockage. Burned instead. At the same time, the low power supply voltage will also cause the release of the switch contacts of low-voltage electrical appliances, so that the control circuit cannot work normally, resulting in personal accidents and damage to mechanical equipment.

因此,如果当电源出现过电压或欠电压达到一定限度时,将电源切断,可保护电力电子设备安全及人身安全、避免发生事故,提高设备可靠性。Therefore, if the power supply is cut off when the overvoltage or undervoltage reaches a certain limit, the safety of power electronic equipment and personal safety can be protected, accidents can be avoided, and equipment reliability can be improved.

一般的漏电断路器不具有过电压或欠电压保护功能,现有具有过电压/欠电压保护功能的漏电断路器或具有过电压/欠电压保护功能的组件一般采用运算放大器为基的电压比较电路对电压进行检测,但是这种电路存在下列不足:易受干扰,需要增加抗干扰设计;需要配置直流工作电源;电压/欠电压保护功能的组件需要增加安装空间导致产品体积比普通漏电断路器大得多;制作成本较高。General leakage circuit breakers do not have overvoltage or undervoltage protection functions. Existing leakage circuit breakers with overvoltage/undervoltage protection functions or components with overvoltage/undervoltage protection functions generally use voltage comparison circuits based on operational amplifiers. The voltage is detected, but this circuit has the following disadvantages: it is susceptible to interference, and anti-interference design needs to be added; DC power supply needs to be configured; components with voltage/undervoltage protection functions need to increase the installation space, resulting in a product that is larger than ordinary leakage circuit breakers Much more; production costs are higher.

实用新型内容Utility model content

为了克服现有技术的上述缺点与不足,本实用新型的目的在于提供一种带过电压和欠电压保护功能的漏电断路器,不仅具有漏电保护功能,而且具有过电压和欠电压保护功能,其安全性与可靠性大大高于现有技术的漏电断路器,并且本实用新型的带过电压和欠电压保护功能的漏电断路器与现有普通漏电 断路器体积相当。In order to overcome the above-mentioned shortcomings and deficiencies of the prior art, the purpose of this utility model is to provide a leakage circuit breaker with overvoltage and undervoltage protection functions, which not only has leakage protection functions, but also has overvoltage and undervoltage protection functions. The safety and reliability are much higher than the leakage circuit breaker in the prior art, and the leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model is equivalent to the volume of the existing common leakage circuit breaker.

本实用新型的目的通过以下技术方案实现:The purpose of this utility model is achieved through the following technical solutions:

具有过电压保护和欠电压保护的漏电断路器,包括第一半导体开关元件、第二半导体开关元件、第一电压非线性元件、第二电压非线性元件、第一二极管、第一电阻、第二电阻、第一电容器、继电器、零序电流互感器和整流桥堆;所述继电器通过脱扣联动机构与断路开关连接,断路开关的输入端与电源连接,断路开关的输出端连接两条铜线,该两条铜线穿过零序电流互感器以后连接负载;继电器的线圈与整流桥堆的输入端串联,串联后两端与断路开关的输出端两个端子连接;A leakage circuit breaker with overvoltage protection and undervoltage protection, comprising a first semiconductor switching element, a second semiconductor switching element, a first voltage non-linear element, a second voltage non-linear element, a first diode, a first resistor, The second resistor, the first capacitor, the relay, the zero-sequence current transformer and the rectifier bridge; Copper wires, the two copper wires are connected to the load after passing through the zero-sequence current transformer; the coil of the relay is connected in series with the input end of the rectifier bridge stack, and after the series connection, the two ends are connected to the two terminals of the output end of the circuit breaker;

所述零序电流互感器输出端一端连接在整流桥堆输出端负极,另一端连接第四二极管的正极,第四二极管的负极与第五电阻一端相连,第五电阻的另一端与第一半导体开关元件的控制极或栅极相连;第一导体开关元件的阳极与整流桥堆输出端正极相连,第一半导体开关元件的阴极与整流桥堆输出端负极相连;第二电容器两端分别与第一半导体开关元件的阴极或源极以及控制极或删除相连;第二二极管与第四电阻并联,且对应第二二极管的正极的并联端与第一半导体开关元件的阴极相连,对应第二二极管的负极的并联端与第四二极管的负极连接;第二电压非线性元件与第二电阻串联后一端与整流桥堆的输出端正极相连,另一端与第四二极管的负极连接;第二半导体开关元件的阴极或源极与整流桥堆输出端负极相连,第二半导体开关元件的阳极或漏极与第三电阻的一端相连,第三电阻的另一端与整流桥堆的输出端正极相连;第三二极管的正极与第二半导体开关元件的阳极或漏极相连,第三二极管的负极与第四二极管的负极连接;第一电压非线性元件与第一电阻串联后一端与整流桥堆的输出端正极相连,另一端与第二半导体开关元件的控制极或栅极相连;第一二极管与第一电容器并联,对应第一二极管负极的并联端与第二半导体开关元件的控制极或栅极相连,对应第一二极管正极的并联端与整流桥堆的输出端负极相连。One end of the output end of the zero-sequence current transformer is connected to the negative pole of the output end of the rectifier bridge stack, the other end is connected to the positive pole of the fourth diode, the negative pole of the fourth diode is connected to one end of the fifth resistor, and the other end of the fifth resistor It is connected to the control pole or gate of the first semiconductor switching element; the anode of the first conductor switching element is connected to the positive pole of the output terminal of the rectifier bridge stack, and the cathode of the first semiconductor switching element is connected to the negative pole of the output terminal of the rectifier bridge stack; the two capacitors of the second capacitor Terminals are respectively connected with the cathode or source of the first semiconductor switch element and the control pole or delete; the second diode is connected in parallel with the fourth resistor, and the parallel terminal corresponding to the anode of the second diode is connected with the first semiconductor switch element. The cathode is connected, and the parallel terminal corresponding to the negative pole of the second diode is connected to the negative pole of the fourth diode; after the second voltage nonlinear element is connected in series with the second resistor, one end is connected to the positive pole of the output end of the rectifier bridge stack, and the other end is connected to the positive pole of the output end of the rectifier bridge stack. The negative pole of the fourth diode is connected; the cathode or source of the second semiconductor switching element is connected with the negative pole of the output terminal of the rectifier bridge stack, the anode or drain of the second semiconductor switching element is connected with one end of the third resistor, and the third resistor The other end is connected to the anode of the output end of the rectifier bridge stack; the anode of the third diode is connected to the anode or drain of the second semiconductor switching element, and the cathode of the third diode is connected to the cathode of the fourth diode; After a voltage non-linear element is connected in series with the first resistor, one end is connected to the positive pole of the output end of the rectifier bridge stack, and the other end is connected to the control pole or gate of the second semiconductor switching element; the first diode is connected in parallel with the first capacitor, corresponding to The parallel terminal of the negative pole of the first diode is connected with the control pole or the gate of the second semiconductor switch element, and the parallel terminal corresponding to the positive pole of the first diode is connected with the negative pole of the output terminal of the rectifier bridge stack.

为进一步实现本实用新型目的,优选地,所述漏电断路器还包括试验电阻和试验按钮;试验电阻与试验按钮串联后一端与断路开关的一个输出端直接连接,另一端的连线与断路开关的另一输出端连接。In order to further realize the purpose of the utility model, preferably, the leakage circuit breaker also includes a test resistor and a test button; after the test resistor is connected in series with the test button, one end is directly connected to an output end of the circuit breaker, and the connecting line of the other end is connected to the circuit breaker. The other output terminal is connected.

优选地,所述第一半导体开关元件和第二半导体开关元件都为单向可控硅、双向可控硅或场效应管。第一半导体开关元件优选采用单向可控硅(晶闸管);第二半导体开关元件可以采用单向可控硅,也可以采用低压小功率场效 应管。Preferably, both the first semiconductor switch element and the second semiconductor switch element are unidirectional thyristors, bidirectional thyristors or field effect transistors. The first semiconductor switch element is preferably a one-way thyristor (thyristor); the second semiconductor switch element can be a one-way thyristor, or a low-voltage low-power field effect transistor.

优选地,所述第一电压非线性元件和第二电压非线性元件为压敏电阻或半导体瞬态电压抑制二极管。Preferably, the first voltage nonlinear element and the second voltage nonlinear element are varistors or semiconductor transient voltage suppression diodes.

优选地,所述第一半导体开关元件和第二半导体开关元件都选用单向可控硅,分别为第一单向可控硅和第二单向可控硅;第一单向可控硅耐压指标大于电源电压峰值的2倍,第二单向可控硅选取耐压指标大于25V的可控硅;第三电阻阻值是第四电阻的阻值的10倍;第一二极管和第二二极管均采用2.4V稳压二极管;第一电阻和第二电阻为限流电阻,采用阻值为100K‐500K低功率电阻;第五电阻作为限流电阻,采用330欧姆电阻;第一电容器和第二电容器均采用0.1微法电容器。Preferably, both the first semiconductor switch element and the second semiconductor switch element are unidirectional thyristors, which are respectively the first unidirectional thyristor and the second unidirectional thyristor; the first unidirectional thyristor is resistant to The voltage index is greater than twice the peak value of the power supply voltage, and the second unidirectional thyristor selects a thyristor with a withstand voltage index greater than 25V; the resistance value of the third resistor is 10 times the resistance value of the fourth resistor; the first diode and Both the second diodes use 2.4V Zener diodes; the first resistor and the second resistor are current-limiting resistors, and the resistance value is 100K-500K low-power resistors; the fifth resistor is used as a current-limiting resistor, and a 330-ohm resistor is used; Both the first capacitor and the second capacitor are 0.1 microfarad capacitors.

优选地,所述第一单向可控硅采用耐压800V可控硅。Preferably, the first unidirectional thyristor is a thyristor with a withstand voltage of 800V.

优选地,采用第一可控硅作为第一半导体开关元件,N沟道场效应管作为第二半导体开关元件;采用第一压敏电阻和第二压敏电阻分别作为第一电压非线性器件和第二电压非线性器件。Preferably, the first thyristor is used as the first semiconductor switching element, and the N-channel field effect transistor is used as the second semiconductor switching element; the first varistor and the second varistor are used as the first voltage nonlinear device and the second varistor respectively. Two-voltage nonlinear device.

优选地,所述N沟道场效应管选择触发电压参数VT为1V,耐压30V,最大导通电流1A的场效应管;所述第一压敏电阻和第二压敏电阻的压敏电压参数分别为242V和382V;第三电阻阻值是第四电阻的阻值的10倍;第一二极管和第二二极管均采用2.4V稳压二极管;第一电阻和第二电阻为限流电阻,采用阻值为100k‐500k低功率电阻;第五电阻作为限流电阻,采用330欧姆电阻;第一电容器和第二电容器均采用0.1微法电容器。Preferably, the N-channel field effect transistor selects a field effect transistor with a trigger voltage parameter V T of 1V, a withstand voltage of 30V, and a maximum conduction current of 1A; the varistor voltage of the first varistor and the second varistor The parameters are 242V and 382V respectively; the resistance value of the third resistor is 10 times the resistance value of the fourth resistor; both the first diode and the second diode are 2.4V Zener diodes; the first resistor and the second resistor are The current-limiting resistor is a low-power resistor with a resistance value of 100k-500k; the fifth resistor is used as a current-limiting resistor, and a 330-ohm resistor is used; both the first capacitor and the second capacitor are 0.1 microfarad capacitors.

优选地,所述第一半导体开关元件和第二半导体开关元件分别都选用单向可控硅,分别为第一单向可控硅和第二单向可控硅;所述第一电压非线性元件和第二电压非线性元件为第一半导体瞬态抑制二极管和第二半导体瞬态抑制二极管。Preferably, the first semiconductor switch element and the second semiconductor switch element are respectively selected from unidirectional thyristors, which are respectively the first unidirectional thyristor and the second unidirectional thyristor; the first voltage nonlinear The element and the second voltage non-linear element are a first semiconductor TVS diode and a second semiconductor TVS diode.

优选地,所述第一半导体瞬态抑制二极管和第二半导体瞬态抑制二极管的导通电压参数分别为240V和380V。Preferably, conduction voltage parameters of the first semiconductor TVS diode and the second semiconductor TVS diode are 240V and 380V respectively.

本实用新型脱扣联动机构T通过电磁式继电器K的吸合动作而工作,当继电器K通电吸合时,推动机械脱扣装置使断路开关SW断开。The trip linkage mechanism T of the utility model works through the pull-in action of the electromagnetic relay K, and when the relay K is energized and pull-in, the mechanical tripping device is pushed to disconnect the circuit breaker SW.

漏电保护触发电路包括:零序电流互感器L、整流桥堆Z、第一半导体开关元件、第四二极管D4、第五电阻器R5、第二二极管D2、第二电容器C2,继电器K及与继电器K相连的脱扣联动机构T。当与本实用新型带过电压和欠电压保护的漏电断路器相连的电路发生漏电时,穿过零序电流互感器L的总电 流不为零,零序电流互感器L的输出端回路有电流流过,该电流达到预定电流时触发第一半导体开关元件导通,从而使与之相连的继电器K得电,触发脱扣联动机构T使断路器断开。为检测漏电保护电路是否正常工作,还设置了漏电试验回路,包括试验电阻RT和试验按钮SK,当本实用新型带过电压和欠电压保护的漏电断路器正常工作时,按下试验按钮SK,试验电阻RT与电源联通,该电阻有电流流过,使得零序电流互感器L的输出端回路有电流流过,该电流触发第一半导体开关元件导通,从而使与之相连的继电器得电,触发脱扣联动机构T使断路器断开。The leakage protection trigger circuit includes: zero-sequence current transformer L, rectifier bridge stack Z, first semiconductor switching element, fourth diode D4, fifth resistor R5, second diode D2, second capacitor C2, relay K and the trip linkage mechanism T connected with the relay K. When leakage occurs in the circuit connected to the leakage circuit breaker with overvoltage and undervoltage protection of the utility model, the total current passing through the zero-sequence current transformer L is not zero, and the output circuit of the zero-sequence current transformer L has current When the current reaches a predetermined current, the first semiconductor switching element is triggered to conduct, so that the relay K connected to it is energized, and the trip linkage mechanism T is triggered to open the circuit breaker. In order to detect whether the leakage protection circuit is working normally, a leakage test circuit is also set up, including a test resistor RT and a test button SK . When the leakage circuit breaker with overvoltage and undervoltage protection of the utility model is working normally, press the test button SK , the test resistor R T is connected to the power supply, and the resistor has a current flowing through it, so that the output terminal circuit of the zero-sequence current transformer L has a current flowing through it, and the current triggers the conduction of the first semiconductor switching element, thereby making the connected relay When energized, the trip linkage mechanism T is triggered to disconnect the circuit breaker.

欠电压保护触发电路包括:整流桥堆Z、第一半导体开关元件、第一电压非线性元件、第一电容器C1、第一电阻R1、第三电阻R3、第四电阻R4、第五电阻R5,第一二极管D1、第二二极管D2、第三二极管D3,第二半导体开关元件,继电器K及与继电器K相连的脱扣联动机构T。当与本实用新型漏电断路器连接的电源电压低于设计的下限电压时,第一电压非线性元件不导通,第二半导体开关元件不导通,第三电阻R3、第三二极管D3及第四电阻R4形成串联电路,该串联电路并联在整流桥堆Z输出端,第四电阻R4上的分压触发第一半导体开关元件导通,从而使与之相连的继电器K得电,触发脱扣联动机构使断路器断开;当与本实用新型漏电断路器连接的电源电压高于设计的下限电压时,第一电压非线性元件导通,该导通电流触发第二半导体开关元件,第二半导体开关元件导通后改变了第三电阻R3、第三二极管D3和第四电阻R4形成的串联电路分压比,第四电阻R4上的分压大大降低,使得第一半导体开关元件处于截止状态,脱扣联动机构T不动作。The undervoltage protection trigger circuit includes: a bridge rectifier stack Z, a first semiconductor switching element, a first voltage non-linear element, a first capacitor C1, a first resistor R1, a third resistor R3, a fourth resistor R4, and a fifth resistor R5, The first diode D1, the second diode D2, the third diode D3, the second semiconductor switching element, the relay K and the trip linkage mechanism T connected with the relay K. When the power supply voltage connected to the leakage circuit breaker of the present utility model is lower than the designed lower limit voltage, the first voltage nonlinear element is not conducting, the second semiconductor switching element is not conducting, the third resistor R3, the third diode D3 and the fourth resistor R4 form a series circuit, the series circuit is connected in parallel to the output terminal of the rectifier bridge stack Z, the voltage division on the fourth resistor R4 triggers the conduction of the first semiconductor switching element, so that the relay K connected to it is energized and triggers The trip linkage mechanism disconnects the circuit breaker; when the power supply voltage connected to the leakage circuit breaker of the present invention is higher than the designed lower limit voltage, the first voltage nonlinear element is turned on, and the conduction current triggers the second semiconductor switching element, After the second semiconductor switch element is turned on, the voltage division ratio of the series circuit formed by the third resistor R3, the third diode D3 and the fourth resistor R4 is changed, and the voltage division on the fourth resistor R4 is greatly reduced, so that the first semiconductor switch The element is in the cut-off state, and the trip linkage mechanism T does not act.

过电压保护触发电路包括:整流桥堆Z、第一半导体开关元件、第二电压非线性元件、第二电阻R2、第四电阻R4、第五电阻R5、第二二极管D2(稳压二极管)、第二电容器C2,继电器K及与继电器K相连的脱扣联动机构T。当与本实用新型漏电断路器连接的电源电压超过设计上限电压时,第二电压非线性元件导通,导通电流在第四电阻R4上的分压触发第一半导体开关元件导通,从而使与之相连的继电器K得电,触发脱扣联动机构T使断路器断开。The overvoltage protection trigger circuit includes: a rectifier bridge stack Z, a first semiconductor switching element, a second voltage non-linear element, a second resistor R2, a fourth resistor R4, a fifth resistor R5, a second diode D2 (zener diode ), the second capacitor C2, the relay K and the trip linkage mechanism T connected to the relay K. When the power supply voltage connected to the leakage circuit breaker of the utility model exceeds the design upper limit voltage, the second voltage non-linear element is turned on, and the divided voltage of the conduction current on the fourth resistor R4 triggers the first semiconductor switch element to be turned on, so that The relay K connected to it is energized, triggering the trip linkage mechanism T to disconnect the circuit breaker.

与现有技术相比,本实用新型具有以下优点和有益效果:Compared with the prior art, the utility model has the following advantages and beneficial effects:

1)本实用新型的带过电压和欠电压保护功能的漏电断路器,不仅能够在线路发生漏电时断开电源以保护人身安全,还可以在电源电压过压或欠压时断开,避免发生事故;1) The leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model can not only disconnect the power supply to protect personal safety when the line leakage occurs, but also disconnect it when the power supply voltage is overvoltage or undervoltage to avoid accidents. ACCIDENT;

2)本实用新型的带过电压和欠电压保护功能的漏电断路器不需要外接过 压欠压保护组件,节省安装空间,产品体积与现有普通漏电断路器相当;2) The leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model does not need external overvoltage and undervoltage protection components, which saves installation space, and the product volume is equivalent to that of existing ordinary leakage circuit breakers;

3)本实用新型的带过电压和欠电压保护功能的漏电断路器采用电压非线性元件实现过电压和欠电压检测与控制,比现有技术的过压欠压保护器可靠性高、制造成本低。3) The leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model adopts voltage nonlinear elements to realize overvoltage and undervoltage detection and control, and has higher reliability and lower manufacturing cost than the overvoltage and undervoltage protectors of the prior art. Low.

附图说明Description of drawings

图1为本实用新型的实施例1的带过电压和欠电压保护功能的漏电断路器电路连接示意图。Fig. 1 is a schematic diagram of circuit connection of an earth leakage circuit breaker with overvoltage and undervoltage protection functions according to Embodiment 1 of the present utility model.

图2为本实用新型的实施例2的带过电压和欠电压保护功能的漏电断路器电路连接示意图。Fig. 2 is a schematic diagram of the circuit connection of the leakage circuit breaker with overvoltage and undervoltage protection functions according to the second embodiment of the present invention.

图3为本实用新型的实施例3的带过电压和欠电压保护功能的漏电断路器电路连接示意图。Fig. 3 is a schematic diagram of circuit connection of the leakage circuit breaker with overvoltage and undervoltage protection functions according to Embodiment 3 of the present invention.

图中示出:第一可控硅SCR1、第二可控硅SCR2、N沟道场效应管NMOS、第一压敏电阻RV1、第二压敏电阻RV2、第一半导体瞬态抑制二极管TVS1、第二半导体瞬态抑制二极管TVS2、第一二极管D1、第二二极管D2、第三二极管D3、第四二极管D4、第一电阻R1、第二电阻R2、第三电阻R3、第四电阻R4、第五电阻R5、第一电容器C1、第二电容器C2、继电器K、脱扣联动机构T、零序电流互感器L、整流桥堆Z、断路开关SW。其中第一二极管D1和第二二极管D2为稳压二极管、试验电阻RT、试验按钮SK。The figure shows: first thyristor SCR1, second thyristor SCR2, N-channel field effect transistor NMOS, first varistor R V 1, second varistor R V 2, first semiconductor transient suppression Diode TVS1, second semiconductor transient suppressor diode TVS2, first diode D1, second diode D2, third diode D3, fourth diode D4, first resistor R1, second resistor R2, The third resistor R3, the fourth resistor R4, the fifth resistor R5, the first capacitor C1, the second capacitor C2, the relay K, the trip linkage mechanism T, the zero-sequence current transformer L, the rectifier bridge stack Z, and the circuit breaker SW. Wherein the first diode D1 and the second diode D2 are zener diodes, a test resistor RT and a test button SK.

具体实施方式detailed description

为更好地理解本实用新型,下面结合附图和实施例对本实用新型作进一步地说明,但本实用新型的实施方式不限于此。In order to better understand the utility model, the utility model will be further described below in conjunction with the accompanying drawings and examples, but the implementation of the utility model is not limited thereto.

实施例1Example 1

本实施例采用第一可控硅SCR1、第二可控硅SCR2作为第一半导体开关元件和第二半导体开关元件;采用第一压敏电阻RV1、第二压敏电阻RV2分别作为第一电压非线性器件和第二电压非线性器件。In this embodiment, the first thyristor SCR1 and the second thyristor SCR2 are used as the first semiconductor switching element and the second semiconductor switching element; the first varistor R V 1 and the second varistor R V 2 are respectively used as A first voltage nonlinear device and a second voltage nonlinear device.

如图1所示,一种具有过电压保护和欠电压保护的漏电断路器,包括第一可控硅SCR1、第二可控硅SCR2、第一压敏电阻RV1、第二压敏电阻RV2、第一二极管D1、第二二极管D2、第三二极管D3、第四二极管D4、第一电阻R1、第二电阻R2、第三电阻R3、第四电阻R4、第五电阻R5、第一电容器C1、第 二电容器C2、继电器K、脱扣联动机构T、零序电流互感器L、整流桥堆Z、断路开关SW、试验电阻RT、试验按钮SK。As shown in Figure 1, a leakage circuit breaker with overvoltage protection and undervoltage protection includes a first thyristor SCR1, a second thyristor SCR2, a first varistor R V 1, a second varistor R V 2, first diode D1, second diode D2, third diode D3, fourth diode D4, first resistor R1, second resistor R2, third resistor R3, fourth resistor R4, fifth resistor R5, first capacitor C1, second capacitor C2, relay K, trip linkage mechanism T, zero-sequence current transformer L, rectifier bridge stack Z, circuit breaker SW, test resistor R T , test button SK .

继电器K通过脱扣联动机构T与断路开关SW连接,断路开关SW的输入端与电源连接,断路开关SW的输出端连接两条铜线,该两条铜线穿过零序电流互感器L以后连接负载;继电器K通过脱扣联动机构T控制断路开关SW,当继电器K的线圈得电吸合时推动脱扣联动机构T使断路开关SW断开;试验电阻RT与试验按钮SK串联后一端与断路开关SW的一个输出端直接连接,另一端与穿过零序电流互感器L后的断路开关SW的另一输出端连接;继电器K的线圈与整流桥堆Z的输入端串联,串联后两端与断路开关SW的输出端两个端子连接,由于两条连接线是否穿过零序电流互感器L对本实用新型电路的效果没有影响,为连接方便,本实施例将这两个连接点对应接在上述试验电阻RT与试验按钮SK串联回路两端。The relay K is connected to the circuit breaker SW through the trip linkage mechanism T, the input terminal of the circuit breaker SW is connected to the power supply, and the output terminal of the circuit breaker SW is connected to two copper wires, after the two copper wires pass through the zero-sequence current transformer L Connect the load; the relay K controls the circuit breaker SW through the trip linkage mechanism T, and when the coil of the relay K is energized, the trip linkage mechanism T is pushed to disconnect the circuit breaker SW; the end of the test resistor R T is connected in series with the test button SK It is directly connected to one output terminal of the circuit breaker SW, and the other terminal is connected to the other output terminal of the circuit breaker SW passing through the zero-sequence current transformer L; the coil of the relay K is connected in series with the input terminal of the rectifier bridge stack Z, and after series connection Both ends are connected with two terminals of the output end of the circuit breaker SW, because whether the two connecting lines pass through the zero-sequence current transformer L has no influence on the effect of the circuit of the utility model, for the convenience of connection, the present embodiment connects the two connection points Correspondingly connected to both ends of the above - mentioned test resistor RT and the test button SK series circuit.

零序电流互感器L输出端一端连接在整流桥堆Z输出端负极,另一端连接第四二极管D4的正极,第四二极管D4的负极与第五电阻R5一端相连,第五电阻R5的另一端与第一可控硅SCR1的控制极相连。第一可控硅SCR1的阳极与整流桥堆Z输出端正极相连,第一可控硅SCR1的阴极与整流桥堆Z输出端负极相连。第二电容器C2两端分别与第一可控硅SCR1的阴极和控制极相连;第二二极管D2与第四电阻R4并联,且对应第二二极管D2的正极的并联端与第一可控硅SCR1的阴极相连,对应第二二极管D2的负极的并联端与第四二极管D4的负极连接;第二压敏电阻RV2与第二电阻R2串联后一端与整流桥堆Z的输出端正极相连,另一端与第四二极管D4的负极连接;第二可控硅SCR2的阴极与整流桥堆Z输出端负极相连,第二可控硅SCR2的阳极与第三电阻R3的一端相连,第三电阻R3的另一端与整流桥堆Z的输出端正极相连;第三二极管D3的正极与第二可控硅SCR2的阳极相连,第三二极管D3的负极与第四二极管D4的负极连接;第一压敏电阻RV1与第一电阻R1串联后一端与整流桥堆Z的输出端正极相连,另一端与第二可控硅SCR2的控制极相连;第一二极管D1与第一电容器C1并联,对应第一二极管D1负极的并联端与第二可控硅SCR2的控制极相连,对应第一二极管D1正极的并联端与整流桥堆Z的输出端负极相连。One end of the output terminal of the zero-sequence current transformer L is connected to the negative pole of the output terminal of the rectifier bridge stack Z, the other end is connected to the positive pole of the fourth diode D4, the negative pole of the fourth diode D4 is connected to one end of the fifth resistor R5, and the fifth resistor The other end of R5 is connected to the control electrode of the first thyristor SCR1. The anode of the first thyristor SCR1 is connected to the positive pole of the output end of the rectifier bridge stack Z, and the cathode of the first thyristor SCR1 is connected to the negative pole of the output end of the rectifier bridge stack Z. Both ends of the second capacitor C2 are respectively connected to the cathode and the control electrode of the first thyristor SCR1; the second diode D2 is connected in parallel with the fourth resistor R4, and the parallel terminal corresponding to the anode of the second diode D2 is connected to the first The cathode of the thyristor SCR1 is connected, and the parallel terminal corresponding to the cathode of the second diode D2 is connected to the cathode of the fourth diode D4; the second varistor R V 2 is connected in series with the second resistor R2, and one end is connected to the rectifier bridge The output end of the stack Z is connected to the positive pole, and the other end is connected to the negative pole of the fourth diode D4; the cathode of the second thyristor SCR2 is connected to the negative pole of the output end of the rectifier bridge stack Z, and the anode of the second thyristor SCR2 is connected to the third thyristor SCR2 One end of the resistor R3 is connected, and the other end of the third resistor R3 is connected to the anode of the output terminal of the rectifier bridge stack Z; the anode of the third diode D3 is connected to the anode of the second thyristor SCR2, and the anode of the third diode D3 The negative pole is connected to the negative pole of the fourth diode D4; the first varistor R V 1 is connected in series with the first resistor R1, and one end is connected to the positive pole of the output end of the rectifier bridge stack Z, and the other end is connected to the control of the second thyristor SCR2 The first diode D1 is connected in parallel with the first capacitor C1, the parallel terminal corresponding to the negative pole of the first diode D1 is connected to the control pole of the second thyristor SCR2, and the parallel terminal corresponding to the positive pole of the first diode D1 It is connected to the negative pole of the output end of the rectifier bridge stack Z.

漏电保护触发电路包括:零序电流互感器L、整流桥堆Z、第一可控硅SCR1、第四二极管D4、第五电阻R5、第二二极管D2、第二电容器C2,继电器K、脱扣联动机构T和断路开关SW。当与本实用新型带过电压和欠电压保护的漏电 断路器相连的电路发生漏电时,穿过零序电流互感器L的总电流不为零,零序电流互感器L的输出端回路有电流流过,该电流经第四二极管整流,再通过第五电阻R5流向第一可控硅SCR1的控制极,当电流达到预定漏电断路器规格电流时触发第一可控硅SCR1导通,使整流桥堆Z的输出端短接,导致与整流桥堆Z的输入端串联的继电器K得电动作,触发脱扣联动机构T使断路开关SW断开。上述工作过程中,第四二极管将零序电流互感器L输出端回路电流进行整流,并经第五电阻R5限流后触发第一可控硅SCR1;第二二极管D2为稳压二极管,用于保护第一可控硅SCR1,避免输入第一可控硅SCR1的电压过高对其造成破坏;第二电容器C2用于吸收干扰信号防止第一可控硅SCR1误触发。The leakage protection trigger circuit includes: zero-sequence current transformer L, rectifier bridge stack Z, first thyristor SCR1, fourth diode D4, fifth resistor R5, second diode D2, second capacitor C2, relay K, trip linkage mechanism T and circuit breaker SW. When leakage occurs in the circuit connected to the leakage circuit breaker with overvoltage and undervoltage protection of the utility model, the total current passing through the zero-sequence current transformer L is not zero, and the output circuit of the zero-sequence current transformer L has current The current is rectified by the fourth diode, and then flows to the control electrode of the first thyristor SCR1 through the fifth resistor R5. When the current reaches the predetermined leakage circuit breaker specification current, the first thyristor SCR1 is triggered to conduct. The output end of rectifier bridge stack Z is short-circuited, causing the relay K connected in series with the input end of rectifier bridge stack Z to be energized, triggering the trip linkage mechanism T to turn off the circuit breaker SW. During the above working process, the fourth diode rectifies the loop current at the output terminal of the zero-sequence current transformer L, and triggers the first thyristor SCR1 after the current is limited by the fifth resistor R5; the second diode D2 is used for voltage regulation The diode is used to protect the first thyristor SCR1 from being damaged by the high input voltage of the first thyristor SCR1; the second capacitor C2 is used to absorb interference signals and prevent the first thyristor SCR1 from false triggering.

为验证漏电保护电路是否正常工作,还设置了漏电试验回路,包括试验电阻RT和试验按钮SK;当本实用新型带过电压和欠电压保护的漏电断路器正常工作时,按下试验按钮SK,试验电阻RT有电流流过,由于该电流通路单向穿过零序电流互感器,使得穿过零序电流互感器L的总电流不为零,零序电流互感器L的输出端回路有电流流过,该电流触发第一可控硅SCR1导通,从而使与之相连的继电器K得电,触发脱扣联动机构T使断路开关SW断开。In order to verify whether the leakage protection circuit is working normally, a leakage test circuit is also set up, including the test resistor RT and the test button SK; when the leakage circuit breaker with overvoltage and undervoltage protection of the utility model is working normally, press the test button SK , there is current flowing through the test resistance R T , because the current path passes through the zero-sequence current transformer in one direction, so that the total current passing through the zero-sequence current transformer L is not zero, and the output terminal circuit of the zero-sequence current transformer L A current flows, and the current triggers the conduction of the first thyristor SCR1, thereby energizing the relay K connected to it, and triggering the trip linkage mechanism T to turn off the circuit breaker SW.

欠电压保护触发电路包括:整流桥堆Z、第一可控硅SCR1、第一压敏电阻RV1、第一电阻R1、第三电阻R3、第四电阻R4、第一电容器C1、第五电阻R5、第一二极管D1、第二二极管D2、第三二极管D3,第二可控硅SCR2,继电器K及与继电器K相连的脱扣联动机构T,断路开关SW。The undervoltage protection trigger circuit includes: rectifier bridge stack Z, first thyristor SCR1, first varistor R V 1, first resistor R1, third resistor R3, fourth resistor R4, first capacitor C1, fifth Resistor R5, first diode D1, second diode D2, third diode D3, second thyristor SCR2, relay K and trip linkage mechanism T connected to relay K, circuit breaker SW.

欠电压保护工作原理为:当与本实用新型漏电断路器连接的电源电压低于设计的下限电压时,第一压敏电阻RV1不导通,第二可控硅SCR2不导通,第三电阻R3、第三二极管D3及第四电阻R4串联后并联在整流桥堆Z的输出端,第四电阻R4上的分压触发第一可控硅SCR1导通,使整流桥堆Z的输出端短接,导致与整流桥堆Z的输入端串联的继电器K得电动作,触发脱扣联动机构T使断路开关SW断开,即当电源电压过低(欠电压)时,断路器跳闸,从而起到欠电压保护作用。当与本实用新型漏电断路器连接的电源电压高于设计的下限电压时,第一压敏电阻RV1导通,该导通电流触发第二可控硅SCR2,第二可控硅SCR2导通后降低了第四电阻R4上的分压,使得第一可控硅SCR1处于截止状态,脱扣联动机构T不动作。上述工作过程中第一电阻R1用于限制第一压敏电阻RV1的导通电流;第一二极管D1为稳压二极管,用于保护第二可控硅SCR2,避免输入第二可控硅SCR2的触发电压过高对其造成破坏;第一电容器C1用于吸收干扰信号防止第二可控硅SCR2误触发。第二二极管D2为稳压 二极管,用于保护第一可控硅SCR1,避免输入第一可控硅SCR1的电压过高对其造成破坏。The working principle of undervoltage protection is: when the power supply voltage connected to the leakage circuit breaker of the utility model is lower than the designed lower limit voltage, the first piezoresistor R V1 is not conducting, the second thyristor SCR2 is not conducting, and the second thyristor SCR2 is not conducting. The three resistors R3, the third diode D3 and the fourth resistor R4 are connected in series and connected in parallel to the output end of the rectifier bridge stack Z, and the voltage division on the fourth resistor R4 triggers the conduction of the first thyristor SCR1, so that the rectifier bridge stack Z The output terminal of the rectifier bridge stack Z is short-circuited, causing the relay K connected in series with the input terminal of the rectifier bridge stack Z to be energized, triggering the trip linkage mechanism T to disconnect the circuit breaker SW, that is, when the power supply voltage is too low (undervoltage), the circuit breaker Tripping, thus playing the role of undervoltage protection. When the power supply voltage connected to the leakage circuit breaker of the utility model is higher than the designed lower limit voltage, the first piezoresistor R V1 is turned on, and the conduction current triggers the second thyristor SCR2, and the second thyristor SCR2 conducts After the connection, the divided voltage on the fourth resistor R4 is reduced, so that the first thyristor SCR1 is in the cut-off state, and the trip linkage mechanism T does not operate. In the above working process, the first resistor R1 is used to limit the conduction current of the first varistor R V1 ; the first diode D1 is a Zener diode, which is used to protect the second thyristor SCR2 and avoid inputting the second thyristor. The trigger voltage of the silicon controlled silicon SCR2 is too high to damage it; the first capacitor C1 is used to absorb interference signals to prevent the second silicon controlled silicon SCR2 from false triggering. The second diode D2 is a voltage stabilizing diode, which is used to protect the first thyristor SCR1 and prevent the first thyristor SCR1 from being damaged by an excessively high input voltage.

过电压保护触发电路包括:整流桥堆Z、第一可控硅SCR1、第二压敏电阻RV2、第二电阻R2、第四电阻R4、第五电阻R5、第二二极管D2、第二电容器C2,继电器K及与继电器K相连的脱扣联动机构T。The overvoltage protection trigger circuit includes: rectifier bridge stack Z, first thyristor SCR1, second varistor R V2 , second resistor R2, fourth resistor R4, fifth resistor R5, second diode D2, The second capacitor C2, the relay K and the trip linkage mechanism T connected with the relay K.

过电压保护工作原理为:当与本实用新型漏电断路器连接的电源电压超过设计上限电压时,第二压敏电阻RV2导通,此时虽然第二可控硅SCR2也导通,但由于有第三二极管D3的隔离作用,第二压敏电阻RV2的导通电流在第四电阻R4上的分压触发第一可控硅SCR1导通,从而使与之相连的继电器K得电动作,触发脱扣联动机构T使断路开关SW断开。即当电源电压过高(过电压)时,断路器跳闸,从而起到过压保护作用。第二电阻R2为限流电阻,限制电压过高时第二压敏电阻RV2导通电流,以保护第一可控硅SCR1;第二电容器C2用于吸收干扰信号防止第一可控硅SCR1误触发。The working principle of the overvoltage protection is: when the power supply voltage connected to the leakage circuit breaker of the utility model exceeds the design upper limit voltage, the second piezoresistor R V 2 is turned on, although the second thyristor SCR2 is also turned on at this time, but Due to the isolation effect of the third diode D3, the divided voltage of the conduction current of the second varistor R V2 on the fourth resistor R4 triggers the conduction of the first thyristor SCR1, so that the relay connected to it K is electrified and acts, triggering the trip linkage mechanism T to turn off the circuit breaker SW. That is, when the power supply voltage is too high (overvoltage), the circuit breaker trips, thus playing the role of overvoltage protection. The second resistor R2 is a current-limiting resistor, which limits the conduction current of the second varistor R V 2 when the voltage is too high to protect the first thyristor SCR1; the second capacitor C2 is used to absorb interference signals to prevent the first thyristor SCR1 triggers by mistake.

本实施例采用采用的第一压敏电阻RV1和第二压敏电阻RV2的压敏电压参数分别为235V和375V。The varistor voltage parameters of the first varistor R V 1 and the second varistor R V 2 adopted in this embodiment are 235V and 375V respectively.

为了验证本实用新型带过电压和欠电压保护功能的漏电断路器的工作状况,将本实用新型带过电压和欠电压保护功能的漏电断路器电源端与电压可调的工频电源相连。In order to verify the working status of the leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model, the power supply terminal of the leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model is connected to the power frequency power supply with adjustable voltage.

当将工频可调电源电压调节到165VAC以下时,第一压敏电阻RV1在这个电压下漏电流很小(不导通),第二可控硅SCR2不导通,第四电阻器R4上的分压大于第一可控硅SCR1的触发电压,使第一可控硅SCR1导通,第一可控硅SCR1导通后相当于整流桥堆Z输出端短接,与整流桥堆Z输入端串联的继电器K线圈得电而动作,触发脱扣联动机构T使断路开关SW断开。When the power frequency adjustable power supply voltage is adjusted below 165VAC, the leakage current of the first varistor R V 1 is very small (non-conductive) at this voltage, the second thyristor SCR2 is non-conductive, and the fourth resistor The divided voltage on R4 is greater than the trigger voltage of the first thyristor SCR1, so that the first thyristor SCR1 is turned on. After the first thyristor SCR1 is turned on, it is equivalent to short-circuiting the Z output terminal of the rectifier bridge stack, and the rectifier bridge stack The K coil of the relay connected in series at the Z input terminal is energized and acts, triggering the trip linkage mechanism T to turn off the circuit breaker SW.

当将工频可调电源电压调节到165~265VAC范围,第一压敏电阻RV1漏电流较大(导通),触发第二可控硅SCR2导通,第二可控硅SCR2导通后降低了第四电阻R4上的分压,使得第一可控硅SCR1处于截止状态,脱扣联动机构T不动作,在这个电源电压范围(165~265VAC),本实用新型具有过电压保护和欠电压保护的漏电断路器处于正常工作状态。When the power frequency adjustable power supply voltage is adjusted to the range of 165-265VAC, the leakage current of the first varistor R V 1 is relatively large (conduction), which triggers the conduction of the second thyristor SCR2, and the second thyristor SCR2 conducts Finally, the divided voltage on the fourth resistor R4 is reduced, so that the first thyristor SCR1 is in the cut-off state, and the trip linkage mechanism T does not act. In this power supply voltage range (165~265VAC), the utility model has overvoltage protection and The leakage circuit breaker for undervoltage protection is in normal working condition.

当将工频可调电源电压调节到265VAC以上时,第一压敏电阻RV1导通,触发第二可控硅SCR2导通,此时第二压敏电阻RV2也导通,且有第三二极管D3隔离,第四电阻R4上的分压足以触发第一可控硅SCR1,第一可控硅SCR1导通后相当于整流桥堆Z输出端短接,与整流桥堆Z输入端串联的继电器K线 圈得电动作,触发脱扣联动机构T使断路开关SW断开。When the power frequency adjustable power supply voltage is adjusted above 265VAC, the first varistor R V 1 is turned on, triggering the second thyristor SCR2 to be turned on, and at this time the second varistor R V 2 is also turned on, and There is a third diode D3 for isolation, and the divided voltage on the fourth resistor R4 is enough to trigger the first thyristor SCR1. After the first thyristor SCR1 is turned on, it is equivalent to short-circuiting the output terminal of the rectifier bridge stack Z, and the rectifier bridge stack The K coil of the relay connected in series at the Z input terminal is energized and acts, triggering the trip linkage mechanism T to turn off the circuit breaker SW.

本实施例中,第一可控硅SCR1耐压指标应大于电源电压峰值的2.0倍,本实施例采用耐压800V可控硅;第二可控硅SCR2选取耐压指标大于25V的可控硅;第三电阻R3阻值是第四电阻R4的阻值的10倍;第一二极管D1和第二二极管D2均采用2.4V稳压二极管;第三二极管D3和第四二极管D4无特殊要求,第一电阻R2和第二电阻R2为限流电阻,可采用阻值为100k至500k低功率电阻;第五电阻R5作为限流电阻,但其阻值与漏电动作电流相关,本实施例采用330欧姆电阻使漏电动作电流调整为30mA;第一电容器C1和第二电容器C2均采用0.1微法电容器。第一可控硅SCR1和第二可控硅SCR2都维护单向可控硅。In this embodiment, the withstand voltage index of the first thyristor SCR1 should be greater than 2.0 times the peak value of the power supply voltage. This embodiment adopts a thyristor with a withstand voltage of 800V; the second thyristor SCR2 selects a thyristor with a withstand voltage index greater than 25V ; The resistance value of the third resistor R3 is 10 times the resistance value of the fourth resistor R4; the first diode D1 and the second diode D2 are both 2.4V Zener diodes; the third diode D3 and the fourth two The pole tube D4 has no special requirements. The first resistor R2 and the second resistor R2 are current-limiting resistors, and low-power resistors with a resistance value of 100k to 500k can be used; the fifth resistor R5 is used as a current-limiting resistor, but its resistance value and leakage operating current Relatedly, in this embodiment, a 330 ohm resistor is used to adjust the leakage operating current to 30 mA; both the first capacitor C1 and the second capacitor C2 are 0.1 microfarad capacitors. Both the first thyristor SCR1 and the second thyristor SCR2 are unidirectional thyristors.

实施例2Example 2

本实施例2采用第一可控硅SCR1作为第一半导体开关元件,N沟道场效应管(NMOS)作为第二半导体开关元件;采用第一压敏电阻RV1、第二压敏电阻RV2分别作为第一电压非线性器件和第二电压非线性器件。In Embodiment 2, the first thyristor SCR1 is used as the first semiconductor switching element, and the N-channel field effect transistor (NMOS) is used as the second semiconductor switching element; the first piezoresistor R V1 , the second piezoresistor R V 2 as the first voltage nonlinear device and the second voltage nonlinear device respectively.

如图2所示,一种具有过电压保护和欠电压保护的漏电断路器,与实施例1比较,本实施例采用N沟道场效应管(NMOS)代替实施例1中的第二可控硅SCR2,各个元件连接方式与实施例1相同,工作原理与实施例1相同。本实施例的N沟道场效应管NMOS的源极S、漏极D、栅极G分别对应实施例1中第二可控硅SCR2的阴极、阳极、控制极。As shown in Figure 2, a leakage circuit breaker with overvoltage protection and undervoltage protection, compared with Embodiment 1, this embodiment uses an N-channel field effect transistor (NMOS) to replace the second thyristor in Embodiment 1 SCR2, the connection method of each component is the same as that of embodiment 1, and the working principle is the same as that of embodiment 1. The source S, drain D, and gate G of the N-channel field effect transistor NMOS in this embodiment correspond to the cathode, anode, and control electrode of the second thyristor SCR2 in Embodiment 1, respectively.

本实施例所采用的第一压敏电阻RV1和第二压敏电阻RV2的压敏电压参数分别为242V和382V。The varistor voltage parameters of the first varistor R V 1 and the second varistor R V 2 used in this embodiment are 242V and 382V respectively.

为了验证本实用新型带过电压和欠电压保护功能的漏电断路器的工作状况,将本实用新型带过电压和欠电压保护功能的漏电断路器电源端与电压可调的工频电源相连。In order to verify the working status of the leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model, the power supply terminal of the leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model is connected to the power frequency power supply with adjustable voltage.

当将工频可调电源电压调节到170VAC以下时,第一压敏电阻RV1在这个电压下漏电流很小(不导通),场效应管NMOS不导通,第四电阻器R4上的分压大于第一可控硅SCR1的触发电压,第一可控硅SCR1导通后相当于整流桥堆Z输出端短接,与整流桥堆Z输入端串联的继电器K线圈得电而动作,触发脱扣联动机构T使断路开关SW断开。When the power frequency adjustable power supply voltage is adjusted below 170VAC, the leakage current of the first varistor RV1 is very small (non-conductive) under this voltage, the field effect transistor NMOS is non-conductive, and the branch on the fourth resistor R4 The voltage is greater than the trigger voltage of the first thyristor SCR1. After the first thyristor SCR1 is turned on, it is equivalent to short-circuiting the output end of the rectifier bridge stack Z, and the relay K coil connected in series with the input end of the rectifier bridge stack Z is energized and acts, triggering The trip linkage mechanism T opens the circuit breaker SW.

当将工频可调电源电压调节到170~270VAC范围,第一压敏电阻RV1漏电流较大(导通),触发场效应管NMOS导通,场效应管NMOS导通后降低了第 四电阻R4上的分压,使得第一可控硅SCR1处于截止状态,脱扣联动机构T不动作,本实用新型具有过电压保护和欠电压保护的漏电断路器处于正常工作状态。When the power frequency adjustable power supply voltage is adjusted to the range of 170-270VAC, the leakage current of the first piezoresistor R V 1 is relatively large (turned on), which triggers the conduction of the field effect transistor NMOS, and after the field effect transistor NMOS is turned on, the second The voltage division on the four resistors R4 makes the first thyristor SCR1 in cut-off state, the trip linkage mechanism T does not act, and the leakage circuit breaker with over-voltage protection and under-voltage protection of the utility model is in normal working state.

当将工频可调电源电压调节到270VAC以上时,此时虽然第一压敏电阻RV1导通,触发场效应管NMOS导通,由于此时第二压敏电阻RV2也导通,且有第三二极管D3隔离,第四电阻R4上的分压足以触发第一可控硅SCR1,第一可控硅SCR1导通后相当于整流桥堆Z输出端短接,与整流桥堆Z输入端串联的继电器K线圈得电,触发脱扣联动机构T使断路开关SW断开。When the power frequency adjustable power supply voltage is adjusted above 270VAC, although the first varistor R V 1 is turned on at this time, the trigger field effect transistor NMOS is turned on, because the second varistor R V 2 is also turned on at this time , and is isolated by the third diode D3, the divided voltage on the fourth resistor R4 is enough to trigger the first thyristor SCR1. The coil of the relay K connected in series with the input terminal of the bridge stack Z is energized, triggering the trip linkage mechanism T to turn off the circuit breaker SW.

元件参数选择:本实施例采用N沟道场效应管NMOS代替实施例1中的第二可控硅SCR2,由于电路工作时该N沟道场效应管NMOS承受电压和电流都很小,所以选择触发电压参数VT=1V,耐压30V,最大导通电流1A的NMOS;其他元件参数选择与实施例1相同。Component parameter selection: In this embodiment, an N-channel field effect transistor NMOS is used to replace the second thyristor SCR2 in Embodiment 1. Since the N-channel field effect transistor NMOS withstands a very small voltage and current when the circuit is in operation, the trigger voltage is selected NMOS with parameter V T =1V, withstanding voltage of 30V, and maximum conduction current of 1A; the selection of other component parameters is the same as that of Embodiment 1.

实施例3Example 3

本实施例采用第一可控硅SCR1作为半导体开关元件1,第二可控硅SCR2作为半导体开关元件2;采用第一半导体瞬态抑制二极管TVS1、第二半导体瞬态抑制二极管TVS2分别作为电压非线性器件1和电压非线性器件2。In this embodiment, the first thyristor SCR1 is used as the semiconductor switching element 1, and the second thyristor SCR2 is used as the semiconductor switching element 2; the first semiconductor transient suppressor diode TVS1 and the second semiconductor transient suppressor diode TVS2 are respectively used as the voltage non-conductor Linear device 1 and voltage nonlinear device 2.

如图3所示,一种具有过电压保护和欠电压保护的漏电断路器,与实施例1比较,本实施例采用第一半导体瞬态抑制二极管TVS1、第二半导体瞬态抑制二极管TVS2分别代替实施例1中的第一压敏电阻RV1和第二压敏电阻RV2,各个元件连接方式与实施例1相同,工作原理与实施例1相同。As shown in Figure 3, a leakage circuit breaker with overvoltage protection and undervoltage protection, compared with Embodiment 1, this embodiment uses the first semiconductor transient suppression diode TVS1 and the second semiconductor transient suppression diode TVS2 to replace The first varistor R V 1 and the second varistor R V 2 in the first embodiment are connected in the same way as in the first embodiment, and the working principle is the same as that in the first embodiment.

本实施例所采用的第一半导体瞬态抑制二极管TVS1、第二半导体瞬态抑制二极管TVS2的导通电压参数分别为240V和380V,由于第一半导体瞬态抑制二极管TVS1和第二半导体瞬态抑制二极管TVS2工作导通时都只通过较小电流(mA数量级),所以除了要求合适的导通电压参数,其他参数无需特别考虑。本实施例中的其他元件参数选择与实施例1相同。The turn-on voltage parameters of the first semiconductor transient suppressor diode TVS1 and the second semiconductor transient suppressor diode TVS2 used in this embodiment are 240V and 380V respectively, because the first semiconductor transient suppressor diode TVS1 and the second semiconductor transient suppressor diode TVS1 When the diode TVS2 is turned on, it only passes a small current (in the order of mA), so there is no need to consider other parameters except for the appropriate conduction voltage parameter. The selection of other component parameters in this embodiment is the same as that in Embodiment 1.

为了验证本实用新型带过电压和欠电压保护功能的漏电断路器的工作状况,将本实用新型带过电压和欠电压保护功能的漏电断路器电源端与电压可调的工频电源相连。In order to verify the working status of the leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model, the power supply terminal of the leakage circuit breaker with overvoltage and undervoltage protection functions of the utility model is connected to the power frequency power supply with adjustable voltage.

当将工频可调电源电压调节到170VAC以下时,第一半导体瞬态抑制二极管TVS1在这个电压下漏电流很小(不导通),第二可控硅SCR2不导通,第四电阻器R4上的分压大于第一可控硅SCR1的触发电压,第一可控硅SCR1导通 后相当于整流桥堆Z输出端短接,与整流桥堆Z输入端串联的继电器K线圈得电而动作,触发脱扣联动机构T使断路开关SW断开。When the power frequency adjustable power supply voltage is adjusted below 170VAC, the leakage current of the first semiconductor transient suppression diode TVS1 is very small (non-conductive) at this voltage, the second thyristor SCR2 is non-conductive, and the fourth resistor The divided voltage on R4 is greater than the trigger voltage of the first thyristor SCR1. After the first thyristor SCR1 is turned on, it is equivalent to short-circuiting the output end of the rectifier bridge stack Z, and the relay K coil connected in series with the input end of the rectifier bridge stack Z is energized. And the action triggers the trip linkage mechanism T to open the circuit breaker SW.

当将工频可调电源电压调节到170~270VAC范围,第一半导体瞬态抑制二极管TVS1漏电流较大(导通),触发第二可控硅SCR2导通,第二可控硅SCR2导通后降低了第四电阻R4上的分压,使得第一可控硅SCR1处于截止状态,脱扣联动机构T不动作,本实用新型具有过电压保护和欠电压保护的漏电断路器处于正常工作状态。When the power frequency adjustable power supply voltage is adjusted to the range of 170-270VAC, the leakage current of the first semiconductor transient suppression diode TVS1 is large (turned on), triggering the conduction of the second thyristor SCR2, and the second thyristor SCR2 is turned on Finally, the divided voltage on the fourth resistor R4 is reduced, so that the first thyristor SCR1 is in the cut-off state, the trip linkage mechanism T does not act, and the leakage circuit breaker with over-voltage protection and under-voltage protection of the utility model is in a normal working state .

当将工频可调电源电压调节到270VAC以上时,此时虽然第一半导体瞬态抑制二极管TVS1导通,触发第二可控硅SCR2导通,由于此时第二半导体瞬态抑制二极管TVS2也导通,且有第三二极管D3隔离,第四电阻R4上的分压足以触发第一可控硅SCR1,第一可控硅SCR1导通后相当于整流桥堆Z输出端短接,与整流桥堆Z输入端串联的继电器K线圈得电,触发脱扣联动机构T使断路开关SW断开。When the power frequency adjustable power supply voltage is adjusted above 270VAC, although the first semiconductor transient suppression diode TVS1 is turned on at this time, triggering the second thyristor SCR2 to be turned on, because the second semiconductor transient suppression diode TVS2 is also turned on at this time. conduction, and is isolated by the third diode D3, the divided voltage on the fourth resistor R4 is enough to trigger the first thyristor SCR1, after the first thyristor SCR1 is turned on, it is equivalent to short-circuiting the output terminal of the rectifier bridge stack Z, The coil of the relay K connected in series with the input terminal of the rectifier bridge stack Z is energized, and the trip linkage mechanism T is triggered to turn off the circuit breaker SW.

本实用新型的实施方式并不受所述实施例的限制,其他的任何未背离本实用新型的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本实用新型的保护范围之内。The implementation of the utility model is not limited by the examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the utility model should be equivalent replacement methods , are all included within the protection scope of the present utility model.

Claims (10)

1. there is the RCCB of overvoltage protection and low-voltage protection, it is characterised in that include the first semiconductor switch unit Part, the second thyristor, the first non-linear to voltage element, the second non-linear to voltage element, the first diode, the first electricity Resistance, the second resistance, the first capacitor, relay, zero sequence current mutual inductor and rectifier bridge stack;Described relay is linked by dropout Mechanism is connected with disconnect switch, and the input of disconnect switch is connected with power supply, and the outfan of disconnect switch connects two copper cash, should Article two, copper cash connects load after zero sequence current mutual inductor;The coil of relay is connected with the input of rectifier bridge stack, string After connection, two ends are connected with two terminals of outfan of disconnect switch;
Described zero sequence current mutual inductor outfan one end is connected to rectifier bridge stack negative pole of output end, and the other end connects the 4th diode Positive pole, the negative pole of the 4th diode and the 5th resistance one end be connected, and the other end of the 5th resistance is first with the first semiconductor switch The control pole of part or grid are connected;The anode of the first conductor switch element is connected with rectifier bridge stack output head anode, and the first half lead The negative electrode of body switch element is connected with rectifier bridge stack negative pole of output end;Second capacitor two ends are first with the first semiconductor switch respectively The negative electrode of part or source electrode and control pole or delete and be connected;Second diode and the 4th resistor coupled in parallel, and corresponding second diode The parallel connected end of positive pole be connected with the negative electrode of the first thyristor, the parallel connected end of the negative pole of corresponding second diode and the The negative pole of four diodes connects;After second non-linear to voltage element and the second resistant series, one end is rectified with the output of rectifier bridge stack The most connected, the negative pole of the other end and the 4th diode connects;The negative electrode of the second thyristor or source electrode and rectifier bridge stack Negative pole of output end is connected, and anode or the drain electrode of the second thyristor are connected with one end of the 3rd resistance, the 3rd resistance The other end is connected with the output head anode of rectifier bridge stack;The positive pole of the 3rd diode and the anode of the second thyristor or Drain electrode is connected, and the negative pole of the 3rd diode and the negative pole of the 4th diode connect;First non-linear to voltage element and the first resistance After series connection, one end is connected with the output head anode of rectifier bridge stack, the control pole of the other end and the second thyristor or grid It is connected;First diode and the first capacitor are in parallel, the parallel connected end of corresponding first diode cathode and the second semiconductor switch unit The control pole of part or grid are connected, and the corresponding parallel connected end of the first diode cathode is connected with the negative pole of output end of rectifier bridge stack.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 1, it is characterised in that institute State RCCB and also include test resistance and test button;Test resistance connect with test button after one end and disconnect switch One outfan is directly connected to, and the line of the other end is connected with another outfan of disconnect switch.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 1, it is characterised in that Described first thyristor and the second thyristor are all one-way SCR, bidirectional triode thyristor or field effect Pipe.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 1, it is characterised in that institute State the first non-linear to voltage element and the second non-linear to voltage element is varistor or quasiconductor transient voltage suppressor diode.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 3, it is characterised in that institute State the first thyristor and the second thyristor all selects one-way SCR, the respectively first one-way SCR With the second one-way SCR;The first resistance to forcing up the targets of one-way SCR is more than 2 times of supply voltage peak value, and the second one-way SCR selects Take the resistance to forcing up the targets controllable silicon more than 25V;3rd resistance is 10 times of the resistance of the 4th resistance;First diode and second Diode all uses 2.4V Zener diode;First resistance and the second resistance are current-limiting resistance, and using resistance is that 100k 500k is low Power resistor;5th resistance, as current-limiting resistance, uses 330 ohmages;First capacitor and the second capacitor all use 0.1 Micro farad capacitor.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 5, it is characterised in that institute State the first one-way SCR and use pressure 800V controllable silicon.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 1, it is characterised in that adopt With the first controllable silicon as the first thyristor, N-channel field effect transistor is as the second thyristor;Use the One varistor and the second varistor are respectively as the first non-linear to voltage device and the second non-linear to voltage device.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 7, it is characterised in that institute State N-channel field effect transistor and select trigger voltage parameter VTFor 1V, pressure 30V, the field effect transistor of maximum conducting electric current 1A;Described The pressure sensitive voltage parameter of one varistor and the second varistor is respectively 242V and 382V;3rd resistance is the 4th resistance 10 times of resistance;First diode and the second diode all use 2.4V Zener diode;First resistance and the second resistance are Current-limiting resistance, using resistance is 100K 500K low-power resistance;5th resistance, as current-limiting resistance, uses 330 ohmages; First capacitor and the second capacitor all use 0.1 micro farad capacitor.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 1, it is characterised in that institute State the first thyristor and one-way SCR the most all selected by the second thyristor, respectively first unidirectional can Control silicon and the second one-way SCR;Described first non-linear to voltage element and the second non-linear to voltage element were the first quasiconductor wink State suppression diode and the second quasiconductor Transient Suppression Diode.
The RCCB with overvoltage protection and low-voltage protection the most according to claim 9, it is characterised in that The conducting voltage parameter of described first quasiconductor Transient Suppression Diode and the second quasiconductor Transient Suppression Diode is respectively 240V and 380V.
CN201620715352.XU 2016-07-07 2016-07-07 Earth leakage circuit breaker with overvoltage protection and undervoltage protection Withdrawn - After Issue CN205846698U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106026017A (en) * 2016-07-07 2016-10-12 华南理工大学 Leakage breaker with over-voltage protection and under-voltage protection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106026017A (en) * 2016-07-07 2016-10-12 华南理工大学 Leakage breaker with over-voltage protection and under-voltage protection
CN106026017B (en) * 2016-07-07 2019-01-18 华南理工大学 A kind of leakage circuit breakers with overvoltage protection and low-voltage protection

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