CN206195148U - Hybrid chamber mode locking laser oscillator - Google Patents
Hybrid chamber mode locking laser oscillator Download PDFInfo
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- CN206195148U CN206195148U CN201621302019.2U CN201621302019U CN206195148U CN 206195148 U CN206195148 U CN 206195148U CN 201621302019 U CN201621302019 U CN 201621302019U CN 206195148 U CN206195148 U CN 206195148U
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Abstract
The utility model relates to a hybrid chamber mode locking laser oscillator, this laser oscillator includes: concave cylindrical surface reflector and protruding cylindrical surface reflector constitute the cavity, and laser crystal places inside the cavity, laser crystal, concave cylindrical surface reflector set up along the optical axis direction with protruding cylindrical surface reflector in proper order, laser crystal, concave cylindrical surface reflector reduce at the ascending height in x side with protruding cylindrical surface reflector three in proper order, semiconductor saturated absorption mirror and planar mirror relative placement in the vertical direction, and be fixed with the matched lenses between semiconductor saturated absorption mirror and the planar mirror. Through the utility model discloses use the unsteady cavity structure at the horizontal direction, the optical quality of this orientation be the output of nearly diffraction limit, still is steady cavity configuration in vertical orientation, and intracavity mould field area increases, and the intracavity light intensity weakens under the power level equally, keep optical quality's prerequisite under, produce higher output.
Description
Technical field
The utility model is related to the technical field of laser oscillator, more particularly to a kind of hybrid chamber mode-locked laser oscillator.
Background technology
Existing high-power ultrashort pulse laser complex structure, beam quality with step by step amplify gradually degrade, this be because
For existing mode locking oscillator is all small-sized steady cavity oscillations device, because this oscillator power output is not high, so needing to increase
Plus pulse of one or more levels amplifier to obtain more power is exported, in this process, due to originals such as thermal distoftion, differences
Cause, beam quality is gradually degraded, and due to state-of-the art limitation, the core component SESAM of mode-locked laser is generally costly,
And small volume (the SESAM prices of a piece of 3mmx3mm sizes are at 3000 Euros or so), so being used present institute's mode oscillation device more
Steady cavity oscillations device, so only needs to the SESAM of 2x2mm as Effect of Back-Cavity Mirror, and the saturation flux of SESAM is typically about 100uJ/
Cm2, due to the design of steady chamber, frequently as Effect of Back-Cavity Mirror, spot size diameter is about 500um to SESAM, and SESAM is usually operated at 5 times and satisfies
With the interval of flux, then, pulse energy is about 0.19uJ in the mode locking oscillator chamber of a steady chamber, and outgoing mirror is if 2%
Output rating, then output pulse energy is 3.8pJ, and even for the oscillator of 1GHz, his power output is also only 3.8W, separately
Outer thermal lensing effect is serious also as powerful steady chamber, significantly reduces beam quality, therefore steady cavity configuration is fundamentally
Be not suitable for high-power output, moreover, the Kerr effect of ultrafast laser is originally just more serious than continuous light, and in low output rating
In steady chamber, because light intensity is stronger in chamber, Kerr effect is also therefore more serious in chamber, also, the steady cavity oscillations device of existing locked mode
Plus amplifier output system complex structure, volume is big, and beam quality cannot ensure in multistage amplification process, so how
Ensure that the luminous flux on SESAM does not increase, and improve the pulse power of output simultaneously, this is problem demanding prompt solution.
Utility model content
Technical problem to be solved in the utility model is due to the output of the current steady cavity oscillations device of locked mode plus amplifier
System architecture is complicated, and volume is big, and beam quality cannot ensure in multistage amplification process.
The technical scheme that the utility model solves above-mentioned technical problem is as follows：A kind of hybrid chamber mode-locked laser oscillator, should
Laser oscillator includes：It is laser crystal, matched lenses, semiconductor saturated absorption mirror, plane mirror, recessed cylindrical mirror, convex
Cylindrical mirror；Recessed cylindrical mirror and projection face speculum group into cavity, laser crystal are placed on the inside cavity；Laser
Crystal, recessed cylindrical mirror are set along optical axis direction successively with convex cylindrical mirror；Laser crystal, recessed cylindrical mirror and projection
Face speculum three height in the x direction is reduced successively；Semiconductor saturated absorption mirror is with plane mirror in vertical direction
It is staggered relatively, and it is fixed with matched lenses between semiconductor saturated absorption mirror and plane mirror.
The beneficial effects of the utility model are：Unsteady cavity structure in slow direction ensure that the nearly diffraction limit of the direction
Beam quality is exported, and nearly diffraction limit output can be reached by matching pumping volume and laser cavity model volume in fast direction,
The semiconductor saturated absorption mirror that optical axis position is placed can be by the Laser Modulation to small-signal near optical axis so that whole optical cavity
Pulsed laser energy after output locked mode is high, and whole system can improve mode locking pulse on the premise of beam quality is ensured
Power output.
On the basis of above-mentioned technical proposal, the utility model can also do following improvement.
Further, described recessed cylindrical mirror radius is R1, and convex cylindrical mirror radius is R2, then recessed cylindrical mirror
It is L=(R1-R2)/2 with the distance between convex cylindrical mirror.
Further, plane mirror and optical axis into 42.5 °~47.5 ° inclination angles.
Beneficial effect using above-mentioned further scheme is：45 ° of plane mirrors are put before optical axis position, laser crystal,
Reflected light is normally incident on semiconductor saturated absorption mirror, has matched lenses before semiconductor saturated absorption mirror, as offset lens,
The focal length of matched lenses is R1, and so by passing twice through matched lenses, reflected light is R1's equivalent to have passed through a radius
The reflection of recessed cylindrical mirror.
Further, the distance between semiconductor saturated absorption mirror and plane mirror, plane mirror and recessed cylindrical surface for reflection
The distance between mirror is equal.
Further, the focal length of matched lenses is R1/2.
Further, matched lenses and the distance of semiconductor saturated absorption mirror are 3-5mm.
Further, plane mirror and the distance of laser crystal are 3-5mm.
Further, convex cylindrical mirror and the ratio of recessed cylindrical mirror width are R2/R1.
Further, semiconductor saturated absorption mirror and projection face speculum group into the first unsteady cavity.
Further, second unsteady cavity of the recessed cylindrical mirror with projection face speculum group into the x direction.
Above-mentioned further beneficial effect：Semiconductor saturated absorption mirror and projection face speculum group into the first unsteady cavity, the
One unsteady cavity due to doing Effect of Back-Cavity Mirror and outgoing mirror using semiconductor saturated absorption mirror, and near optical axis, total similar to
Steady cavity configuration, therefore, this part output light is that the pulse modulated by semiconductor saturated absorption mirror is exported (from plane mirror one
Side exports, and incides recessed cylindrical mirror).And the working mechanism of semiconductor saturated absorption mirror is satisfied with the semiconductor in steady cavity configuration
It is similar with absorbing mirror, now, on semiconductor saturated absorption mirror there was only the small part light intensity in whole optical cavity, therefore can't increase
The load of semiconductor saturated absorption mirror, is damaged so as to avoid the semiconductor saturated absorption mirror in high-power output.Due to pump
Variations in refractive index caused by the light absorbs heat production of Pu, so as to cause the lens effect of laser crystal, it is ensured that recessed cylindrical mirror, convex
Two cylindrical mirrors of cylindrical mirror can together constitute a steady cavity configuration with laser crystal, as long as adjustment pump light is fast in crystal
The size in direction, it is ensured that pumping volume and chamber mode volume matching, it is possible to which guarantee can also have nearly diffraction limit defeated in the fast direction
Go out.
Brief description of the drawings
Fig. 1 is the light path schematic diagram in x-z-plane of the invention；
Fig. 2 is the light path schematic diagram in y-z plane of the invention；
Accompanying drawing：1st, recessed cylindrical mirror, 2, optical axis, 3, plane mirror, 4, convex cylindrical mirror, 5, semiconductor saturation inhales
Receive mirror, 6, matched lenses, 7, laser crystal.
Specific embodiment
Principle of the present utility model and feature are described below in conjunction with accompanying drawing, example is served only for explaining this practicality
It is new, it is not intended to limit scope of the present utility model.
As shown in Figures 1 and 2, a kind of hybrid chamber mode-locked laser oscillator,
The laser oscillator includes：It is laser crystal 7, matched lenses 6, semiconductor saturated absorption mirror 5, plane mirror 3, recessed
Cylindrical mirror 1, convex cylindrical mirror 4；Recessed cylindrical mirror 1 and the composition cavity of convex cylindrical mirror 4, laser crystal 7 are placed
In the chamber central position；The recessed cylindrical mirror 1 of laser crystal 7 is respectively positioned on optical axis with convex cylindrical mirror 4；Semiconductor is satisfied
With the vertical corresponding flat speculum 3 of absorbing mirror 5；Along light distance, matched lenses 6 is preposition in semiconductor saturated absorption mirror 5；Pumping
Light is emitted by laser diode and forms hot spot by pumping, and the surface of laser crystal 7 is radiated at through recessed cylindrical mirror 1,
Plane mirror 3 receives the light scattered by laser crystal 7, and part light is after concussion in described cavity through convex cylindrical mirror 4
Side exports；The light of reception is normally incident in semiconductor saturated absorption mirror 5 by part light by plane mirror 3；Semiconductor saturation
Shaken in the cavity after the matched lens 6 of light of the reflection of absorbing mirror 5, exported through the side of convex cylindrical mirror 4 after concussion.
Unsteady cavity structure in slow direction ensure that the beam quality output of the nearly diffraction limit of the direction, can in fast direction
Nearly diffraction limit output is reached with by matching pumping volume and laser cavity model volume, in the semiconductor saturation that optical axis position is placed
Absorbing mirror 5 can be by the Laser Modulation to small-signal near optical axis so that the laser pulse energy after whole optical cavity output locked mode
Amount is high, and whole system on the premise of beam quality is ensured, can improve the power output of mode locking pulse.
The radius of recessed cylindrical mirror 1 is assumed to be R1, and the radius of convex cylindrical mirror 4 is assumed to be R2, then the He of recessed cylindrical mirror 1
The distance between convex cylindrical mirror 4 is L=(R1-R2)/2.
Holding plane speculum 3 before laser crystal 7, the angle of the plane mirror 3 of placement is 45 °, laser crystal 7：Can
Voluntarily to be selected the laser crystal 7 of high-gain, wide spectrum, crystal width to be greater than pumping width (x directions) according to experiment；Thickness
To be 2 times or so of pumping focus waist (y directions), generally 1mm；Design of length considers the sharp keen length of pumping focal spot, choosing
Select 10-12mm appropriate, generally, recessed cylindrical mirror 1 is wider than laser crystal 7.Such as here we select be 14mm wide
Laser crystal 7, then recessed cylindrical mirror 1 at least wants 18-20mm.Now, the width of convex cylindrical mirror 4 is than recessed cylinder
Speculum 1 is small, and the width of convex cylindrical mirror 4 is that the width of recessed cylindrical mirror 1 is multiplied by R2 divided by R1.
45 ° of plane mirrors 3 are put before optical axis position, laser crystal 7, reflected light is normally incident in semiconductor saturated absorption
On mirror 5, there is matched lenses 6 before semiconductor saturated absorption mirror 5, used as offset lens, the focal length of matched lenses 6 is R1, is so passed through
Pass twice through f1, reflected light is the reflection of the recessed cylindrical mirror 1 of R1, Jiao of matched lenses 6 equivalent to have passed through a radius
Away from being R1/2, matched lenses 6, in the case where SESAM fuel factors are not considered, the focal length of matched lenses 6 is R1/2.Half in experiment
Conductor saturated absorption mirror 5 has thermic to distort, and causes matched lenses 6 to need to be slightly less than R1/2.Laser crystal (7), laser crystal 7
Preceding surface is all located on optical axis in pump light near focal point, laser crystal 7, recessed cylindrical mirror 1 with convex cylindrical mirror 4,
Perpendicular to recessed cylindrical mirror 1 and convex cylindrical mirror 4, optical axis refers to recessed cylindrical mirror 1 burnt with convex cylindrical mirror 4 to optical axis
The line of point.
In space, in the x direction, pumping width is less than the width of laser crystal 7 to described pumping width；In space,
In y-direction, the thickness of laser crystal 7 is 2 times of pumping focus waist to described pumping width.
Semiconductor saturated absorption mirror 5 constitutes the first unsteady cavity with convex cylindrical mirror 4, and the wavefront of the unsteady cavity of its composition is
From the spheric wave front of rear output, plane mirror 3 is crossed from the part in the spheric wave front of rear output, be radiated at recessed post
On face speculum 1, semiconductor saturated absorption mirror 5 and the unsteady cavity of convex cylindrical mirror 4 first, the first unsteady cavity is due to using partly leading
Body saturated absorption mirror 5 does Effect of Back-Cavity Mirror and outgoing mirror, and near optical axis, total similar to steady cavity configuration, therefore, this part
Output light is that the pulse output modulated by semiconductor saturated absorption mirror 5 (exports from the side of plane mirror 3, incides recessed post
Face speculum 1).And the working mechanism of semiconductor saturated absorption mirror 5 is similar with the semiconductor saturated absorption mirror 5 in steady cavity configuration,
Now, there was only the small part light intensity in whole optical cavity on semiconductor saturated absorption mirror 5, therefore the suction of semiconductor saturation can't be increased
The load of mirror 5 is received, is damaged so as to avoid the semiconductor saturated absorption mirror 5 in high-power output.
Recessed cylindrical mirror 1 and convex cylindrical mirror 4 constitute the second unsteady cavity, when chamber is adjusted, it is ensured that block semiconductor and satisfy
With absorbing mirror 5, recessed cylindrical mirror 1 and convex cylindrical mirror 4 constitute the second unsteady cavity and do not shake, and output light can ensure slow side
Exported to basic mode.
Pump light is shaped as x directions 12mm wide by the laser diode of business by pumping, the light of y directions focuses 500um
Spot, through recessed cylindrical mirror 1, focuses on the preceding surface of laser crystal 7, by absorption of crystal.Recessed cylindrical mirror 1 and projection face
The unsteady cavity in the composition x of speculum 4 directions, laser output is exported over there from convex cylindrical mirror 4.When chamber is adjusted, semiconductor is blocked
The second unsteady cavity that saturated absorption mirror 5, recessed cylindrical mirror 1 and convex cylindrical mirror 4 are constituted in the x direction is in stablizes shape
State, output light is exported for slow direction basic mode, and laser output is exported from convex cylindrical mirror 4.
Laser crystal 7, recessed cylindrical mirror 1 and convex cylindrical mirror 4 constitute steady cavity configuration, and adjustment pump light is brilliant in laser
The fast direction of body 7 exports, if pumping volume and chamber mode volume matching, export nearly diffraction limit in the fast direction.It is due to pumping
Variations in refractive index caused by light absorbs heat production, so as to the lens effect for causing, it is ensured that recessed cylindrical mirror 1, convex cylindrical surface for reflection
4 two cylindrical mirrors of mirror can together constitute a steady cavity configuration with crystal thermal lens, as long as adjustment pump light is in the fast direction of crystal
Size, it is ensured that pumping volume and chamber mode volume matching, it is possible to which guarantee can also have nearly diffraction limit to export in the fast direction.
Specific embodiment
Recessed cylindrical mirror 2:R1=250mm, 20mm wide, 10mm high, convex cylindrical mirror 4：R2=125mm, 6mm wide,
10mm high, and the edge of a knife is polished near that end of laser crystal 7 center line, recessed cylindrical mirror 1 and convex cylindrical mirror 4 away from
Placed from 60mm, laser crystal 7 is the Nd of 14mm x1mm x10mm (corresponding to three directions of x, y, z respectively):YVO4, laser is brilliant
The left side of body 7 apart from recessed cylindrical mirror 1 for 35mm is placed, with optical axis into 45 degree of angles place, and matched lenses 6 is by plane mirror 3
The convex lens of focal length 60mm, the 3mmX3mm's of the dominant wavelength 1064nm of the selection BATOP of semiconductor saturated absorption mirror 5 companies partly leads
Body saturated absorption mirror 5, laser diode of the pump light source from 880nm wavelength.
Preferred embodiment of the present utility model is the foregoing is only, is not used to limit the utility model, it is all in this practicality
Within new spirit and principle, any modification, equivalent substitution and improvements made etc. should be included in guarantor of the present utility model
Within the scope of shield.
Claims (10)
1. a kind of hybrid chamber mode-locked laser oscillator, it is characterised in that the laser oscillator includes：Laser crystal (7), matching are saturating
Mirror (6), semiconductor saturated absorption mirror (5), plane mirror (3), recessed cylindrical mirror (1), convex cylindrical mirror (4)；Recessed post
Face speculum (1) and convex cylindrical mirror (4) composition cavity, laser crystal (7) are placed on the inside cavity；Laser crystal
(7), recessed cylindrical mirror (1) is set along optical axis direction successively with convex cylindrical mirror (4)；Laser crystal (7), recessed cylindrical surface for reflection
Height of the mirror (1) with convex cylindrical mirror (4) three in the x direction is reduced successively；Semiconductor saturated absorption mirror (5) is anti-with plane
Penetrate mirror (3) staggered relatively in vertical direction, and be fixed between semiconductor saturated absorption mirror (5) and plane mirror (3)
With lens (6).
2. a kind of hybrid chamber mode-locked laser oscillator according to claim 1, it is characterised in that described recessed cylindrical surface for reflection
Mirror (1) radius is R1, and convex cylindrical mirror (4) radius is R2, then between recessed cylindrical mirror (1) and convex cylindrical mirror (4)
Distance be L=(R1-R2)/2.
3. a kind of hybrid chamber mode-locked laser oscillator according to claim 2, it is characterised in that plane mirror (3) with
Optical axis is into 42.5 °~47.5 ° inclination angles.
4. a kind of hybrid chamber mode-locked laser oscillator according to claim 3, it is characterised in that semiconductor saturated absorption mirror
(5) it is equal with the distance between the distance between plane mirror (3), plane mirror (3) and recessed cylindrical mirror (1).
5. a kind of hybrid chamber mode-locked laser oscillator according to claim 1, it is characterised in that Jiao of matched lenses (6)
Away from being R1/2.
6. a kind of hybrid chamber mode-locked laser oscillator according to claim 5, it is characterised in that matched lenses (6) and half
The distance of conductor saturated absorption mirror (5) is 3-5mm.
7. a kind of hybrid chamber mode-locked laser oscillator according to claim 3, it is characterised in that plane mirror (3) with
The distance of laser crystal (7) is 3-5mm.
8. a kind of hybrid chamber mode-locked laser oscillator according to claim 2, it is characterised in that convex cylindrical mirror (4)
It is R2/R1 with the ratio of recessed cylindrical mirror (1) width.
9. a kind of hybrid chamber mode-locked laser oscillator according to claim 6, it is characterised in that semiconductor saturated absorption mirror
(5) the first unsteady cavity is constituted with convex cylindrical mirror (4).
10. a kind of hybrid chamber mode-locked laser oscillator according to claim 8, it is characterised in that the recessed cylindrical surface for reflection
Mirror (1) and convex cylindrical mirror (4) composition the second unsteady cavity in the x direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621302019.2U CN206195148U (en) | 2016-11-30 | 2016-11-30 | Hybrid chamber mode locking laser oscillator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621302019.2U CN206195148U (en) | 2016-11-30 | 2016-11-30 | Hybrid chamber mode locking laser oscillator |
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| CN206195148U true CN206195148U (en) | 2017-05-24 |
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| CN201621302019.2U Expired - Fee Related CN206195148U (en) | 2016-11-30 | 2016-11-30 | Hybrid chamber mode locking laser oscillator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106532420A (en) * | 2016-11-30 | 2017-03-22 | 北京应用物理与计算数学研究所 | Mixed chamber mode locking laser oscillator and laser outputting method thereof |
| CN114966983A (en) * | 2022-04-29 | 2022-08-30 | 重庆邮电大学 | Three-optical-cavity coupling system and quantum regulation and control method based on system |
-
2016
- 2016-11-30 CN CN201621302019.2U patent/CN206195148U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106532420A (en) * | 2016-11-30 | 2017-03-22 | 北京应用物理与计算数学研究所 | Mixed chamber mode locking laser oscillator and laser outputting method thereof |
| CN106532420B (en) * | 2016-11-30 | 2023-09-19 | 北京应用物理与计算数学研究所 | Hybrid cavity mode-locked laser oscillator and method for outputting laser by same |
| CN114966983A (en) * | 2022-04-29 | 2022-08-30 | 重庆邮电大学 | Three-optical-cavity coupling system and quantum regulation and control method based on system |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170524 Termination date: 20171130 |
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| CF01 | Termination of patent right due to non-payment of annual fee |