CN206178310U - Inequivalence optical logic gate based on ag nonlinear material - Google Patents
Inequivalence optical logic gate based on ag nonlinear material Download PDFInfo
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- CN206178310U CN206178310U CN201621119826.0U CN201621119826U CN206178310U CN 206178310 U CN206178310 U CN 206178310U CN 201621119826 U CN201621119826 U CN 201621119826U CN 206178310 U CN206178310 U CN 206178310U
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Abstract
The utility model provides an inequivalence optical logic gate based on ag nonlinear material, includes the waveguide base member, along being provided with light wave incident passageway, light wave exit channel with the parallel orientation of horizontal center pin, the field intensity monitor has been placed in light wave exit channel left side on the waveguide base member on the waveguide base member, is provided with left ring shape chamber and right ring shape chamber on the waveguide base member between light wave incident passageway and the light wave exit channel, the utility model discloses simple structure, small, the integration of being convenient for adopt the luminous intensity of the outer accent light of control to change the refracting index of nonlinear material, and then realize logical conversion, can popularize and apply light communication device or equipment technical field.
Description
Technical field
This utility model belongs to optical communication apparatus or equipment technical field, and in particular to be based on the non-linear materials of Ag/ to a kind of
The XOR optical logic gate of material.
Background technology
Optical logic gate is optical information processing and requisite element in optical oomputing.Traditional electricity gate is by three
Pole pipe cascade is formed, and for a gate needs to drive multiple audions, the power consumption of such device is of a relatively high, and optics is patrolled
Collect relatively low equivalent to a selecting switch, power consumption when door works.Optical logic gate it is all of input be all it is parallel, it is each
The result of the separate and final computing of individual input element is showed in the optical domain in the form of light intensity.As realizing full light
One of Primary Component of integrated optical circuit, all-optical logic gate is extensively applied in photonic integrated device world of miniaturization, is caused more next
The concern of more people.Up to the present, various distinct methods and material are used to realize all-optical logic gate, including optical fiber
Type, photonic crystal and semiconductor amplifier type etc..But these implementations have certain restriction, nonlinear fiber is such as based on
The all-optical logic gate of effect, its complex structure, components and parts are a lot, are unfavorable for miniaturization；And the spontaneous spoke of semiconductor optical amplifier
Penetrating noise can produce a very large impact to result；Photonic crystal gate there is also above-mentioned deficiency, and manufacturing process is complicated, no
Beneficial to batch production.
Optical-fiber type optical logic gate has the features such as loss is low, transmission capacity is big due to optical fiber itself, is widely used in bone
In dry net Transmission system.But existing optical communication network is photoelectricity hybrid network, still optical electrical/light is there is in intermediate node
Conversion.Therefore, communication system is constrained by electronic bottleneck, limits transfer rate.It is additionally, since optical-fiber type optical logic gate line
Road is complicated, electronic devices and components are more, is unfavorable for being miniaturized and integrated.
A kind of photonic crystal optical logic gate is prior art discloses, the dielectric posts of total are arranged with lattice structure,
In the lattice of periodic arrangement, remove some lattices, overall structure is tree-shaped.It includes four road input waveguides and an output wave
Lead, one of input waveguide is input into control signal, an input waveguide is idle waveguide, and two other input waveguide is signal
Input waveguide.But because the structure is micron dimension, and complex structure, for the application in nano environment is still unsatisfactory for, due to
Complex structure, is unfavorable for miniaturization.
XOR also makes half plus computing, XOR generally use in a computer.Its algorithm is equivalent to without carry
Binary addition：Represent true with 1 under binary system, 0 represents false, then the algorithm of XOR is：0 0=0,1 0=1,0
1=1,1 1=0 (are all 0, different is that 1), we can utilize this rule, and it is applied to into light logic aspect.Due to electronics
, there are various complicated big systems in technology and the development of computer, and their rule of conversion also observes the rule disclosed in boolean.
Logical operationss be commonly used to test true-false value, it is most common to logical operationss be exactly circulation process, for judge whether this from
Open cycle continues executing with the instruction in circulating.The a certain link of AES or more too many levels can be used in, make algorithm more complicated,
It is difficult to be cracked, safety is higher.All-optical XOR logic door can provide a kind of important optical logic in terms of integrated optics
Device.
And the micro structure all-optical XOR logic door that this patent is proposed, simple structure, small volume, just with it is integrated.And adopt
With a kind of new control method --- additional light intensity.Light intensity in by controlling ring waveguide, and then change the refractive index of material, come
Realize the principle of gate.
The content of the invention
Technical problem to be solved in the utility model is to overcome above-mentioned deficiency, provide a kind of simple structure, small volume,
Just with the XOR light logic based on Ag/ nonlinear materials that is integrated, realizing using the intensity for controlling additional light intensity logical transition
Door.
Solving the technical scheme of above-mentioned technical problem employing is：Along the side parallel with horizontal middle spindle on waveguide matrix
To light wave incidence channel, light wave exit channel is provided with, light wave exit channel left side is placed with field intensity monitor on waveguide matrix,
Left annular chamber and right annular chamber are provided with waveguide matrix between light wave incidence channel and light wave exit channel.
The thickness of waveguide matrix of the present utility model is 10~20nm.
Left annular chamber of the present utility model and right annular chamber set between two parties between light wave incidence channel and light wave exit channel
Put.
The external diameter of left annular chamber of the present utility model and right annular chamber is 200~400nm, internal diameter is 150~350nm；It is left
The distance of center circle L of annular chamber and right annular chamber is 700~900nm；The distance of center circle light wave incidence channel of described right annular chamber away from
It is 10~20nm from H.
Left annular chamber and right annular intracavity of the present utility model is filled with nonlinear material.
The width of light wave incidence channel of the present utility model and light wave exit channel is 45~55nm.
Light wave incidence channel and light wave exit channel are machined with waveguide matrix because this utility model is employed, in light
Two annular chambers are provided between ripple incidence channel and light wave exit channel, and nonlinear material is filled with annular chamber, led to
Cross and control light intensity be input into by light wave incidence channel plus high light, and then change the refractive index of nonlinear material in annular chamber,
" 0 ", the conversion between " 1 " are realized, compared with prior art, this utility model simple structure, small volume, is easy to integrated, adopted
The light intensity for controlling additional high light changes the refractive index of nonlinear material, and then realizes logical transition, can promote the use of light and lead to
T unit or equipment technical field.
Description of the drawings
Fig. 1 is the structural representation of this utility model one embodiment.
Fig. 2 is the schematic diagram of this utility model output intensity at wavelength and field intensity monitor 6 when being single annular cavity configuration.
Fig. 3 is the output schematic diagram when refractive index of left annular chamber 3 and right annular chamber 5 is 1.52.
It is output schematic diagram of the 1.52, refractive index of right annular chamber 5 when being 1.57 that Fig. 4 is the refractive index of left annular chamber 3.
It is output schematic diagram of the 1.57, refractive index of right annular chamber 5 when being 1.52 that Fig. 5 is the refractive index of left annular chamber 3.
Fig. 6 is the output schematic diagram when refractive index of left annular chamber 3 and right annular chamber 5 is 1.57.
In figure：1st, waveguide matrix；2nd, light wave incidence channel；3rd, left annular chamber；4th, light wave exit channel；5th, right annular chamber；
6th, field intensity monitor.
Specific embodiment
This utility model is described in further details with reference to the accompanying drawings and examples, but this utility model is not limited to this
A little embodiments.
Embodiment 1
In FIG, the XOR optical logic gate based on Ag/ nonlinear materials of the present embodiment, including the waveguide of horizontal positioned
Matrix 1, the waveguide matrix 1 of the present embodiment adopts Ag substrate, and the thickness of waveguide matrix 1 is 15nm, on waveguide matrix 1 along with
Light wave incidence channel 2 and light wave exit channel 4 that width is 50nm are machined with the parallel direction of horizontal middle spindle, in waveguide-based
The left side of light wave exit channel 4 is placed with field intensity monitor 6 on body 1, and additional high light is input into by light wave incidence channel 2, light wave goes out
Penetrate passage 4 to export, be machined with left annular chamber 3 between light wave incidence channel 2 and light wave exit channel 4 between two parties on waveguide matrix 1
With right annular chamber 5, it is 250nm that the left annular chamber 3 of the present embodiment and the external diameter of right annular chamber 5 are 300nm, internal diameter；Left annular chamber 3
It is 800nm with the distance of center circle L of right annular chamber 5；The distance of center circle light wave incidence channel of right annular chamber 3 apart from H be 15nm, left annular
Nonlinear material is filled with chamber 3 and right annular chamber 5, by regulating and controlling light intensity the change of the nonlinear characteristic of material is realized,
Further realize the transfer of resonant wavelength, it is preferable that the nonlinear material is silicon, refractive index n of nonlinear material meets n=n0+
n2I, wherein, n0For the value of initial index of refraction, n2For nonlinear viscoelastic piles, n2Value be 2.07*10-9cm2/ w, I are outer
Plus highlight intensity.As shown in Figure 2, when being only machined with left annular chamber 3 on waveguide matrix 1, when wavelength be 795nm, left figure intensity
Be distributed close trough, right figure intensity distributions and reach crest, therefore, using wavelength be 795nm as discontinuity, in identical wavelength
Under, the refractive index of nonlinear material is changed by control input light intensity, and then the regulation and control of output intensity are realized, using this light intensity difference
The principle of gate is realized, due to circuit and the difference of structure, according to practical situation and circuit theory, when the value of output signal
0 is output as during less than 0.07, when the value of output signal is more than 0.15 1 is output as.
In figure 3, when the refractive index of left annular chamber 3 and right annular chamber 5 is 1.52, i.e., when input signal is 0/0, root
According to the size of output, it can be seen that output signal is 0.
In the diagram, when the refractive index that the refractive index of left annular chamber 3 is 1.52, right annular chamber 5 is 1.57, i.e. input is believed
Number for 0/1 when, according to output size, it can be seen that output signal is 1.
In Figure 5, when the refractive index that the refractive index of left annular chamber 3 is 1.57, right annular chamber 5 is 1.52, i.e. input is believed
Number for 1/0 when, according to output size, it can be seen that the signal of output be 1.
In figure 6, when the refractive index of left annular chamber 3 and right annular chamber 5 is 1.57, i.e., when input signal is 1/1, according to
The size of output, it can be seen that output signal is 0, according to principle of interference, when input is all 1, is output as 0, illustrates two train waves
Interfere cancellation at field intensity monitor 6, cause output signal to be 0.
Embodiment 2
In embodiment 1, the XOR optical logic gate based on Ag/ nonlinear materials of the present embodiment, the thickness of waveguide matrix 1
For 10nm, it is machined with the light wave incidence that width is 45nm along on the direction parallel with horizontal middle spindle on waveguide matrix 1 and leads to
Road 2 and light wave exit channel 4, the left annular chamber 3 of the present embodiment and the external diameter of right annular chamber 5 are 200nm, internal diameter is 150nm；It is left
The distance of center circle L of annular chamber 3 and right annular chamber 5 is 700nm；The distance of center circle light wave incidence channel of right annular chamber 3 is apart from H
The annexation of 10nm, remaining each parts and parts is identical with embodiment 1.
Embodiment 3
In embodiment 1, the XOR optical logic gate based on Ag/ nonlinear materials of the present embodiment, the thickness of waveguide matrix 1
For 20nm, it is machined with the light wave incidence that width is 55nm along on the direction parallel with horizontal middle spindle on waveguide matrix 1 and leads to
Road 2 and light wave exit channel 4, the left annular chamber 3 of the present embodiment and the external diameter of right annular chamber 5 are 400nm, internal diameter is 350nm；It is left
The distance of center circle L of annular chamber 3 and right annular chamber 5 is 900nm；The distance of center circle light wave incidence channel of right annular chamber 3 is apart from H
The annexation of 20nm, remaining each parts and parts is identical with embodiment 1.
The thickness of waveguide matrix 1, the width of light wave incidence channel 2 and light wave exit channel 4, left annular in above-described embodiment
The internal diameter and external diameter and distance of center circle L of chamber 3 and right annular chamber 5, the distance of center circle light wave incidence channel of left annular chamber 3 apart from H roots
Specifically determine according to practical situations, the change of data value is within protection domain of the present utility model.
Claims (6)
1. a kind of XOR optical logic gate based on Ag/ nonlinear materials, including waveguide matrix, it is characterised in that：In waveguide matrix
On the direction parallel with horizontal middle spindle is provided with light wave incidence channel, light wave exit channel, light wave goes out on waveguide matrix
Penetrate passage left side and be placed with field intensity monitor, be provided with left ring on waveguide matrix between light wave incidence channel and light wave exit channel
Shape chamber and right annular chamber.
2. the XOR optical logic gate based on Ag/ nonlinear materials according to claim 1, it is characterised in that：Described ripple
The thickness for leading matrix is 10~20nm.
3. the XOR optical logic gate based on Ag/ nonlinear materials according to claim 2, it is characterised in that：A described left side
Annular chamber and right annular chamber are centrally located between light wave incidence channel and light wave exit channel.
4. the XOR optical logic gate based on Ag/ nonlinear materials according to claim 3, it is characterised in that：A described left side
The external diameter of annular chamber and right annular chamber is 200~400nm, internal diameter is 150~350nm；The center of circle of left annular chamber and right annular chamber
It is 700~900nm away from L；The distance of center circle light wave incidence channel of described right annular chamber apart from H be 10~20nm.
5. the XOR optical logic gate based on Ag/ nonlinear materials according to claim 4, it is characterised in that：A described left side
Annular chamber and right annular intracavity are filled with nonlinear material.
6. the XOR optical logic gate based on Ag/ nonlinear materials according to claim 1, it is characterised in that：Described light
The width of ripple incidence channel and light wave exit channel is 45~55nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621119826.0U CN206178310U (en) | 2016-10-13 | 2016-10-13 | Inequivalence optical logic gate based on ag nonlinear material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621119826.0U CN206178310U (en) | 2016-10-13 | 2016-10-13 | Inequivalence optical logic gate based on ag nonlinear material |
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| CN206178310U true CN206178310U (en) | 2017-05-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106249505A (en) * | 2016-10-13 | 2016-12-21 | 陕西师范大学 | XOR optical logic gate based on Ag/ nonlinear material |
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2016
- 2016-10-13 CN CN201621119826.0U patent/CN206178310U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106249505A (en) * | 2016-10-13 | 2016-12-21 | 陕西师范大学 | XOR optical logic gate based on Ag/ nonlinear material |
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| CF01 | Termination of patent right due to non-payment of annual fee |
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| CF01 | Termination of patent right due to non-payment of annual fee |