CN206157055U - Utilize device of magnetron sputtering technology preparation niSiO2 glass decay piece - Google Patents
Utilize device of magnetron sputtering technology preparation niSiO2 glass decay piece Download PDFInfo
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- CN206157055U CN206157055U CN201621230741.XU CN201621230741U CN206157055U CN 206157055 U CN206157055 U CN 206157055U CN 201621230741 U CN201621230741 U CN 201621230741U CN 206157055 U CN206157055 U CN 206157055U
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- pipeline
- magnetron sputtering
- vacuum chamber
- empty room
- glass
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Abstract
Traditional decay piece adopts through chemical plating or vacuum deposition membrane in the glass basement, uses harmful chemical, the polluted environment, and the cost is higher. An utilize device of magnetron sputtering technology preparation niSiO2 glass decay piece which constitutes and includes: real empty room, real empty room (1) is cylindrical, the side has the thing of getting mouth and visits the window, real empty room lower part center has adjustable support (13), the adjustment position of adjustable support is located outside the real empty room, install positive electrode (14) on the adjustable support, work piece (15) have been placed on the positive electrode, real empty room upper portion center has emitting electrode (23), target (24) is sputtered to last being connected with of emitting electrode, still install on real empty room's the lateral wall sensor (22) and heater (16), temperature controller (19) of installation outside real empty room are connected to sensor and heater wire (20). The utility model discloses utilize device of magnetron sputtering technology preparation niSiO2 glass decay piece is applied to in the application.
Description
Technical field：
The utility model is related to a kind of using magnetron sputtering technique preparation Ni/SiO2The device of glass attenuator.
Background technology：
Fiber optic communication is a kind of weak power drive behavior, if the luminous power of transmission is more than threshold power, causes optical signal
Transmission distortion, has a strong impact on quality of optical fiber communication and effect, and optical attenuator is a kind of to be intended to reduce transmitting optical power in waveguide
Optical passive component, attenuator is usually using on the glass substrate by one layer or many of chemical plating or the method for vacuum evaporation plating
Layer metal film and prepare, chemical plating method pollutes environment using the harmful chemical such as strong acid, highly basic and cyanogen, chromic anhydride, and
It is relatively costly；Vacuum evaporation thickness is in micron dimension, and film flatness is uncontrollable, and decay of the same attenuator to optical signal differs
Cause, cause the decline of optic communication quality；Therefore searching new method prepares optical attenuation piece becomes the key for solving these problems.
The content of the invention：
The purpose of this utility model is to provide a kind of using magnetron sputtering technique preparation Ni/SiO2The dress of glass attenuator
Put.
Above-mentioned purpose is realized by following technical scheme：
One kind prepares Ni/SiO using magnetron sputtering technique2The device of glass attenuator, its composition includes：Vacuum chamber, institute
The vacuum chamber stated is cylinder, and with taking thing mouth and visiting window, described vacuum chamber lower central has adjustable support for side,
The adjustment position of described adjustable support is located at outside vacuum room, and positive electrode, described positive electricity are provided with described adjustable support
Workpiece is placed with extremely, described vacuum chamber central upper portion has emission electrode, on described emission electrode sputtering target is connected with,
Sensor and heater are also equipped with the side wall of described vacuum chamber, described sensor and described heater conductor connects
In the temperature controller of vacuum outdoor mounted.
Described utilization magnetron sputtering technique prepares Ni/SiO2The device of glass attenuator, described vacuum chamber leads to respectively
Cross pipeline connection ionization tube, Pirani gauge, manually-operated gate, magnetic valve C, charge valve and air inlet hand valve, described ionization tube and described
Pirani gauge vacuum meter is connected to by pipeline, described manually-operated gate is by pipeline connection molecule vavuum pump, described electromagnetism
Valve C is connected to oil-sealed rotary pump by pipeline, and by the external inert gas plenum device of pipeline, described enters described charge valve
Gas hand valve passes through pipeline connection flow gauge.
Described utilization magnetron sputtering technique prepares Ni/SiO2The device of glass attenuator, described adjustable support is electricity
Control is adjustable, is capable of achieving the up and down motion and rotary motion of positive electrode, you can adjust the stepping electricity that there is control to move up and down in support
Machine and the stepper motor of control rotary motion, described molecular pump also connects institute by pipeline, magnetic valve A and magnetic valve B
The oil-sealed rotary pump stated, described positive electrode and described emission electrode is respectively increased wire and is connected to radio-frequency power supply.
The beneficial effects of the utility model：
1. magnetic control sputtering device of the present utility model, by SiO2Glass substrate is put in vacuum room, and it is cloudy that interior is provided with magnetic control
Pole and sputter gas (hydrogen, nitrogen or oxygen), sputtering nickel target connects negative electrode, and negative electrode adds negative voltage, first to system forvacuum, then
The inert gas Ar gas of appropriate pressure is filled with, the glow discharge in vacuum room of Ar gas is made, Ar+ and free-moving electronics e is produced,
Ar+ accelerating impact W metal target surfaces under high voltage electric field E effects, W metal target atom obtains sufficiently high energy, departs from Ni
SiO is flown in target constraint2Matrix, is deposited on SiO2W metal film is formed on glass substrate surface, and electronics is then transported to substrate
It is dynamic；Under the collective effect of Lorentz force and electric field force, secondary electron e1 flies to during matrix, with roulette and spiral shell in acceleration
The complex form of spin line does circumnutation in target near surface；Electronics e1 is strapped in the plasma near target surface by electromagnetic field
In region, the region ionizes out substantial amounts of Ar+ bombardments Ni targets, it is achieved thereby that the characteristics of magnetron sputtering high speed deposition.
Magnetic control sputtering device of the present utility model, by the regulation to technological parameter to film forming layer planarization, institutional framework
And attenuation performance is controlled, and then sputtering power is affected, Ni environmental microbes are affected by sputtering power, passed through
Sputtering pressure is controlled, and then affects sputter rate and grain size, by being controlled to sputtering time, and then affected
Ni environmental microbes and membranous layer ingredient.
Magnetic control sputtering device of the present utility model, the described regulation to technological parameter also can be by adjusting adjustable support
To complete.
Description of the drawings：
Accompanying drawing 1 is structure schematic side view of the present utility model.
Accompanying drawing 2 is the processing process figure of magnetic control sputtering device of the present utility model.
In figure：1-vacuum chamber；2-ionization tube；3-Pirani gauge；4-vacuum meter；5-molecular pump；6 —
Manually-operated gate；7-magnetic valve A；8-pipeline；9-magnetic valve B；10-oil-sealed rotary pump；11-magnetic valve C；12 —
Charge valve；13-adjustable support；14-positive electrode；15-workpiece；16-heater；17-air inlet hand valve；18-stream
Gauge；19-temperature controller；20-wire；21-radio-frequency power supply；22-sensor；23-emission electrode；24-sputtering
Target.
Specific embodiment：
Embodiment 1：
One kind prepares Ni/SiO using magnetron sputtering technique2The device of glass attenuator, its composition includes：Vacuum chamber, institute
The vacuum chamber 1 stated is cylinder, and with taking thing mouth and visiting window, described vacuum chamber lower central has adjustable support for side
13, the adjustment position of described adjustable support is located at outside vacuum room, and positive electrode 14 is provided with described adjustable support, described
Workpiece 15 is placed with positive electrode, described vacuum chamber central upper portion has emission electrode 23, is connected on described emission electrode
There is a sputtering target 24, be also equipped with sensor 22 and heater 16 on the side wall of described vacuum chamber, described sensor and described
Heater conductor 20 be connected to the temperature controller 19 of vacuum outdoor mounted.
Embodiment 2：
Utilization magnetron sputtering technique according to claim 1 prepares Ni/SiO2The device of glass attenuator, it is described
Vacuum chamber connects ionization tube 2, Pirani gauge 3, manually-operated gate 6, magnetic valve C11, charge valve 12 and air inlet hand valve by pipeline 8 respectively
17, described ionization tube and described Pirani gauge is connected to vacuum meter 4 by pipeline, and described manually-operated gate is connected by pipeline
Molecular pump 5, described magnetic valve C is connected to oil-sealed rotary pump 10 by pipeline, and described charge valve is external by pipeline
Inert gas plenum device, described air inlet hand valve passes through pipeline connection flow gauge 18.
Embodiment 3：
Utilization magnetron sputtering technique according to claim 2 prepares Ni/SiO2The device of glass attenuator, it is described
Adjustable support is automatically controlled adjustable, is capable of achieving the up and down motion and rotary motion of positive electrode, you can adjusts and have in support control upper and lower
The stepper motor of motion and the stepper motor of control rotary motion, described molecular pump also passes through pipeline, the and of magnetic valve A 7
Magnetic valve B 9 connects described oil-sealed rotary pump, and described positive electrode and described emission electrode is respectively increased wire and is connected to
Radio-frequency power supply 21.
Embodiment 4：
A kind of utilization magnetron sputtering technique described in utilization claim 1 to 3 prepares Ni/SiO2The dress of glass attenuator
Put, its process steps for preparing Ni films is：
（1）SiO2The cleaning of glass substrate, load, first to SiO in ultrasound2Glass substrate carries out oil removing, cleaning, table
Face pretreatment includes the oil removing and corrosion of matrix, and oil removing main purpose is to remove the defect such as surface impurity and dirt, the side of employing
Method is first by SiO2Glass basis is cleaned by ultrasonic 30min in acetone soln, then uses ethanol purge 10min, then uses deionization
Water is rinsed well；Send in 100 DEG C of drying bakers and dry 10 minutes；
（2）Vacuum chamber is opened, W metal target is fixed on electromagnetism target position, by SiO2Glass substrate is put on the positive electrode.
Then temperature is adjusted according to technological requirement, when vacuum chamber interior temperature degree is not up to standard, is adjusted using temperature controller；
（3）Startup power supply, takes out base vacuum, starts mechanical pump forvacuum, when vavuum pump is less than 10Pa, opens molecule
Pumping high vacuum, reduces the residual gas in vacuum cavity, it is ensured that the purity of film as far as possible；
（4）Logical Ar gas pre-sputtering, when background vacuum reaches 5 × 10-3Pa, is passed through straight argon (99.999%), using pure
Ar used as working gas, before deposition Ni films, with removing the oxide layer and pollutant on target surface using ion carved by pre-sputtering 10min
Erosion sample surfaces 20min；
（5）Sputtering, opens shielding power supply, is sputtered, and argon gas ionization under high-tension current effect forms Ar+, Ar+ bombardments
Ni target material surfaces, the Ni particles of effusion are deposited on SiO under the collective effect of electric field force and magnetic field force2Matrix surface film forming；
（6）After reaction terminates, shielding power supply and sputtering system general supply are closed, close molecular pump and molecular pump general supply；
（7）Cooling sampling, although sputtering is carried out in low temperature, in sputter procedure, the energy of high energy particle can be converted into heat
Can, cause SiO2Substrate temperature is high, therefore can not take out immediately, natural cooling for a period of time after, pour air in vacuum chamber
To atmospheric pressure, vacuum room cover is opened, take out sample, process chart is as shown in Figure 2.
Claims (3)
1. it is a kind of to prepare Ni/SiO using magnetron sputtering technique2The device of glass attenuator, its composition includes：Vacuum chamber, its feature
It is：Described vacuum chamber is cylinder, and with taking thing mouth and visiting window, described vacuum chamber lower central has adjustable for side
Support, the adjustment position of described adjustable support is located at outside vacuum room, and positive electrode is provided with described adjustable support, described
Workpiece is placed with positive electrode, described vacuum chamber central upper portion has emission electrode, is connected with described emission electrode and splashes
Shoot at the target, on the side wall of described vacuum chamber sensor and heater are also equipped with, described sensor and described heater is led
Line is connected to the temperature controller of vacuum outdoor mounted.
2. utilization magnetron sputtering technique according to claim 1 prepares Ni/SiO2The device of glass attenuator, is characterized in that：
Described vacuum chamber connects ionization tube, Pirani gauge, manually-operated gate, magnetic valve C, charge valve and air inlet hand valve by pipeline respectively,
Described ionization tube and described Pirani gauge is connected to vacuum meter by pipeline, and described manually-operated gate passes through pipeline connection molecule
Vavuum pump, described magnetic valve C is connected to oil-sealed rotary pump by pipeline, and described charge valve passes through the external inert gas of pipeline
Aerating device, described air inlet hand valve passes through pipeline connection flow gauge.
3. utilization magnetron sputtering technique according to claim 2 prepares Ni/SiO2The device of glass attenuator, is characterized in that：
Described adjustable support is automatically controlled adjustable, is capable of achieving the up and down motion and rotary motion of positive electrode, you can adjusts and have in support control
Stepper motor and the stepper motor of control rotary motion that system moves up and down, described molecular pump also passes through pipeline, electromagnetism
The described oil-sealed rotary pump of valve A and magnetic valve B connections, described positive electrode and described emission electrode is respectively increased wire connection
In radio-frequency power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621230741.XU CN206157055U (en) | 2016-11-16 | 2016-11-16 | Utilize device of magnetron sputtering technology preparation niSiO2 glass decay piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621230741.XU CN206157055U (en) | 2016-11-16 | 2016-11-16 | Utilize device of magnetron sputtering technology preparation niSiO2 glass decay piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206157055U true CN206157055U (en) | 2017-05-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621230741.XU Expired - Fee Related CN206157055U (en) | 2016-11-16 | 2016-11-16 | Utilize device of magnetron sputtering technology preparation niSiO2 glass decay piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206157055U (en) |
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2016
- 2016-11-16 CN CN201621230741.XU patent/CN206157055U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170510 Termination date: 20171116 |
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| CF01 | Termination of patent right due to non-payment of annual fee |