CN206116445U - LED epitaxial wafer of growth on magnesium aluminate scandium substrate - Google Patents
LED epitaxial wafer of growth on magnesium aluminate scandium substrate Download PDFInfo
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Abstract
The utility model discloses a LED epitaxial wafer of growth on magnesium aluminate scandium substrate, including growing gaN buffer layer on magnesium aluminate scandium substrate, the al nanometer island layer on the gaN buffer layer of growing, the non - doping gaN layer on al nanometer island layer of growing, the n type doping gaN film on non - doping gaN layer of growing, long inGaNGaN quantum well on n type doping gaN film, the p type doping gaN film on the inGaNGaN quantum well of growing. The utility model discloses preparation low cost's advantage, LED epitaxial wafer surfacing, defect density hang down, the photoelectricity performance is good.
Description
Technical field
The utility model is related to LED, is more particularly to grown in magnesium aluminate scandium (ScMgAlO4) outside LED on substrate
Prolong piece.
Background technology
The group III-nitride of GaN and its correlation is in electricity, optics and acoustically has extremely excellent property,
It is widely used in and prepares the devices such as light emitting diode (LEDs), laser diode (LDs) and field-effect transistor.
Business-like LED is mainly epitaxially grown on a sapphire substrate.On the one hand, due to sapphire and the crystalline substance of GaN
Lattice mismatch is up to 13.3%, causes to form very high dislocation density during extension GaN film, so as to reduce the current-carrying of material
Transport factor, shortens carrier lifetime, finally have impact on the performance of GaN base device.On the other hand, by sapphire at room temperature
Heat and GaN between thermal mismatching degree be up to 27%, after outer layer growth terminates, device from epitaxially grown High-temperature cooling to
Room temperature process can produce very big compression, be easily caused the cracking of film and substrate.Further, since sapphire thermal conductivity
It is low, it is 25W/m.K under room temperature, it is difficult to the heat produced in chip is discharged in time, cause thermal accumlation, make the interior quantum of device
Efficiency is reduced, the performance of final impact device.
Therefore, silicon (Si), part metals (Al, Cu etc.) and strontium aluminate tantalum lanthanum (La0.3Sr1.7AlTaO6), lithium gallium oxide
(LiGaO2) etc. novel substrate material be used for epitaxial growth GaN film successively.However, growing GaN film on such substrates
Still face problems.For example, Si substrates are although cheap and size is big, but Si substrates and extension interlayer lattice mismatch
It is larger；Metal substrate with high heat conductance mostly is face-centred cubic structure or body-centered cubic structure, and the GaN film for growing is easy
There is other impurities phase；La0.3Sr1.7AlTaO6And LiGaO2There are relatively low lattice mismatch, but large scale between substrate and GaN film
The preparation technology of substrate is difficult, and substrate monocrystal is of poor quality, is unfavorable for growth and the high-performance GaN film of high-quality GaN film
The industrialization of device.Therefore, a kind of backing material superior in the aspect combination property such as matching degree, quality and cost is urgently found
It is applied to epitaxial growth GaN film.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of prior art, the purpose of this utility model is to provide one kind to be grown in
The lattice mismatch little (1.8%) of the LED on magnesium aluminate scandium substrate, selected magnesium aluminate scandium backing material and GaN, heat
Mismatch little (9.7%).
The purpose of this utility model is achieved through the following technical solutions：
The LED being grown on magnesium aluminate scandium substrate, including the GaN cushions being grown on magnesium aluminate scandium substrate,
The Al nano island layers being grown on GaN cushions, the undoped GaN layer being grown on Al nano island layers is grown in undoped GaN
N-shaped doping GaN film on layer, the InGaN/GaN SQWs being grown in N-shaped doping GaN film are grown in InGaN/GaN
P-type doping GaN film on SQW.
The magnesium aluminate scandium substrate is with (0001) face 0.5～1 ° of (11-20) face partially as epitaxial surface.
The thickness of the GaN cushions is 50～100nm.
The thickness of the Al nano islands layer is 50～200nm.
The thickness of the undoped GaN layer is 200～300nm.
The thickness of the N-shaped doping GaN film is 3～5 μm, and N-shaped doping GaN film concentration is 5～9 × 1018cm-3。
The InGaN/GaN SQWs are the InGaN well layer/GaN barrier layer in 7～10 cycles, the wherein thickness of InGaN well layer
Spend for 2～3nm；The thickness of GaN barrier layer is 10～13nm.
The thickness of p-type doping GaN film is 250～350nm, p-type doping GaN film doping content is 2～5 ×
1018cm-3。
The preparation method of the described LED being grown on magnesium aluminate scandium substrate, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using magnesium aluminate scandium substrate, with (0001) face 0.5～1 ° of (11-20) face partially
For epitaxial surface, crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to ScMgAlO4(0001) face of substrate；
(2) substrate annealing is processed, and the detailed process of the annealing is：Molecular beam epitaxy vacuum growth room is placed the substrate into,
To ScMgAlO at 600～700 DEG C4Substrate carries out annealing 1-2h, obtains the substrate surface of atomically flating；
(3) GaN bufferings layer epitaxially grown：Underlayer temperature is adjusted to 450～550 DEG C, using pulsed laser deposition technique anti-
The pressure for answering room is 1.0～4.0 × 10-5Pa, laser energy density is 1.5-3.0J/cm2Under conditions of grow GaN cushions；
In 450～550 DEG C of grown buffer layers；
(4) epitaxial growth of Al nano islands layer：Using molecular beam epitaxial growth technique, substrate is maintained at into 700～900
DEG C, N2Flow 0.1-2sccm, Al source evaporating temperature is 1100-1200 DEG C, and on the GaN cushions that step (3) is obtained Al is grown
Nano island layer；
(5) epitaxial growth of undoped GaN layer：Using molecular beam epitaxial growth technique, substrate is maintained at into 500～600
DEG C, it is 6.0～8.0 × 10 in the pressure of reative cell-5Pa, the speed of growth are under the conditions of 0.6～0.8ML/s, to obtain in step (4)
Al nano island layers on grow undoped GaN layer；
(6) epitaxial growth of N-shaped doping GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is risen to into 650
～750 DEG C, be 6.0～8.0 × 10 in chamber pressure-5Pa, the speed of growth are under the conditions of 0.6～0.8ML/s, in step (5)
Growing n-type doping GaN film in the undoped GaN layer for obtaining；
(7) epitaxial growth of InGaN/GaN MQWs：Using molecular beam epitaxial growth technique, growth temperature is 650～
750 DEG C, be 1.0～2.0 × 10 in the pressure of reative cell-5Pa, the speed of growth are under the conditions of 0.2～0.4ML/s, in step (6)
InGaN/GaN MQWs are grown in the N-shaped doping GaN film for obtaining；
(8) epitaxial growth of p-type doping GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is adjusted to into 650
～750 DEG C, the pressure 6.0～8.0 × 10 of reative cell-5Under the conditions of Pa, 0.6～0.8ML/s of the speed of growth, obtain in step (7)
InGaN/GaN MQWs on grow p-type doping GaN film.
Compared with prior art, the utility model has advantages below and beneficial effect：
(1) the utility model uses magnesium aluminate scandium as substrate, and magnesium aluminate scandium crystal belongs to hexagonal crystal system, with GaN lattices
Mismatch little (1.8%), thermal mismatching little (9.7%), easily grow the GaN of hexagonal phase and occur without other impurities phase；Magnesium aluminate
Scandium thermal conductivity will be significantly larger than sapphire, be conducive to the radiating of device, improve the performance of device；Large scale magnesium aluminate scandium substrate system
Standby technique is relatively easy, is readily available, and low price advantageously reduces production cost；The magnesium aluminate scandium that the utility model is used
Substrate crystal quality is high, and XRD rocking curve half-peak breadth (FWHM) values in its (0001) face are only 20arcsec.
(2) the utility model can effectively reduce dislocation using the superior magnesium aluminate scandium of combination property as substrate
Formation, and realize the Effective Doping of GaN film, prepare high-quality GaN film, favorably improve the radiation recombination of carrier
Efficiency, can increase substantially the luminous efficiency of nitride device such as semiconductor laser, light emitting diode and solar cell.With
As a example by the LED that the utility model makes, can realize that n-GaN layers doping content is 5～9 × 1018cm-3, p-GaN layer
Doping content is 2～5 × 1018cm-3, the photoelectric properties of test wafer level LED chip are as follows in the case of not diced chip：
Under high workload electric current 350mA, the forward bias voltage of chip is 2.6V, and power output reaches 640mW.Test data is confirmed adopts
LED chip photoelectric properties with the utility model fabrication techniques are excellent, there is good application prospect.
Description of the drawings
Fig. 1 is the schematic cross-section of LED prepared by embodiment 1.
Fig. 2 is the low temperature and room temperature photoluminescence (PL) collection of illustrative plates of LED prepared by embodiment 1.
Fig. 3 is the luminous power-electric current collection of illustrative plates of LED prepared by embodiment 1.
Specific embodiment
With reference to embodiment, the utility model is described in further detail, but embodiment of the present utility model
Not limited to this.
Embodiment 1
The preparation method of the LED being grown on magnesium aluminate scandium substrate of the present embodiment, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using magnesium aluminate scandium substrate, with (0001) face 0.5～1 ° of (11-20) face partially
For epitaxial surface, crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to ScMgAlO4(0001) face；
(2) substrate annealing is processed, and the detailed process of the annealing is：The growth of substrate molecular beam epitaxy vacuum is indoor,
Annealing is carried out 1 hour to magnesium aluminate scandium substrate at 600 DEG C, atomically flating surface is obtained；
(3) GaN bufferings layer epitaxially grown：Underlayer temperature is adjusted to 450 DEG C, using pulsed laser deposition technique in reative cell
Pressure is 1.0 × 10-5Pa, laser energy density are 2.0J/cm2Under conditions of growth thickness for 50nm GaN cushions；
(4) Al nano islands layer epitaxially grown：Underlayer temperature is adjusted to 750 DEG C, in N2Flow is 0.5sccm, and the evaporation of Al sources is warm
Spend the Al nano island layers for 50nm for growth thickness under conditions of 1200 DEG C；
(5) epitaxial growth of undoped GaN layer：Using molecular beam epitaxial growth technique, substrate is maintained at into 500 DEG C,
The pressure of reative cell is 6.0 × 10-5It is raw on the Al nano island layers that step (3) is obtained under the conditions of Pa, speed of growth 0.6ML/s
Long thickness is the undoped GaN layer of 200nm；
(6) epitaxial growth of N-shaped doping GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is risen to into 650
DEG C, it is 6.0 × 10 in chamber pressure-5Pa, the speed of growth are under the conditions of 0.6ML/s, in undoped GaN that step (4) is obtained
Growth thickness is 3 μm of N-shaped doping GaN film on layer, and n-GaN layers doping content is 5 × 1018cm-3；
(7) epitaxial growth of InGaN/GaN MQWs：Using molecular beam epitaxial growth technique, growth temperature is 650
DEG C, it is 1.0 × 10 in the pressure of reative cell-5Pa, the speed of growth are that under the conditions of 0.2ML/s, the N-shaped obtained in step (5) adulterates
InGaN/GaN MQWs are grown in GaN film；The InGaN/GaN SQWs are that the InGaN well layer/GaN in 7 cycles builds
Layer, the wherein thickness of InGaN well layer are 2nm, and the thickness of GaN barrier layer is 10nm；
(8) epitaxial growth of p-type doping GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is adjusted to into 650
DEG C, it is 6.0 × 10 in the pressure of reative cell-5Pa, the speed of growth are under the conditions of 0.6ML/s, in the InGaN/ that step (6) is obtained
The thickness grown on GaN MQWs is the p-type doping GaN films of 250nm, and p-GaN layer doping content is 2 × 1018cm-3。
Jing is determined, and the roughness RMS value of p-type doping GaN film manufactured in the present embodiment is less than 1.5nm；Show to obtain and show smooth
High-quality p-type doping GaN film.
As shown in figure 1, manufactured in the present embodiment be grown in ScMgAlO4LED on substrate, including being grown in
ScMgAlO4GaN cushions 11 on substrate 10, the Al nano islands layer 12 being grown on GaN cushions 11, are grown in Al nanometers
Undoped GaN layer 13 on island layer 12, the N-shaped doping GaN film 14 being grown in undoped GaN layer 13, is grown in N-shaped doping
InGaN/GaN SQWs 15 in GaN film 14, the p-type doping GaN film 16 being grown on InGaN/GaN SQWs 15.
Fig. 2 is the PL collection of illustrative plates of LED of the present utility model, and test shows the low temperature light of InGaN/GaN MQWs
In 443nm, halfwidth is 21.0nm to the peak position of photoluminescence, and in 445nm, halfwidth is 22.3nm to the peak position of room temperature photoluminescence,
The surface MQW has good photoelectric properties, is the ideal material for preparing high light efficiency LED device.
Fig. 3 is the luminous power-electric current collection of illustrative plates of LED of the present utility model, its under 300mA high currents, luminous power
For 370mW, current lighting requirement level is reached, show the excellent electric property of LED component of the present utility model.
Embodiment 2
The preparation method of the LED being grown on magnesium aluminate scandium substrate of the present embodiment, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using magnesium aluminate scandium substrate, with (0001) face 0.5～1 ° of (11-20) face partially
For epitaxial surface, crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to ScMgAlO4(0001) face；
(2) substrate annealing is processed, and the detailed process of the annealing is：The growth of substrate molecular beam epitaxy vacuum is indoor,
Annealing is carried out 2 hours to magnesium aluminate scandium substrate at 700 DEG C, atomically flating surface is obtained；
(3) GaN bufferings layer epitaxially grown：Underlayer temperature is adjusted to 550 DEG C, using pulsed laser deposition technique in reative cell
Pressure is 4.0 × 10-5Pa, laser energy density are 2.5J/cm2Under conditions of growth thickness for 100nm GaN cushions；
(4) Al nano islands layer epitaxially grown：Underlayer temperature is adjusted to 750 DEG C, in N2Flow is 1sccm, Al sources evaporating temperature
For the Al nano island layers that growth thickness under conditions of 1200 DEG C is 100nm；
(5) epitaxial growth of undoped GaN layer：Using molecular beam epitaxial growth technique, substrate is maintained at into 600 DEG C,
The pressure of reative cell is 8.0 × 10-5Pa, the speed of growth are under the conditions of 0.8ML/s, on the Al nano island layers that step (3) is obtained
Growth thickness is the undoped GaN layer of 300nm；
(6) epitaxial growth of N-shaped doping GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is risen to into 750
DEG C, it is 8.0 × 10 in chamber pressure-5Pa, the speed of growth are under the conditions of 0.8ML/s, in undoped GaN that step (4) is obtained
Growth thickness is 5 μm of N-shaped doping GaN film on layer, and n-GaN layers doping content is 9 × 1018cm-3；
(7) epitaxial growth of InGaN/GaN MQWs：Using molecular beam epitaxial growth technique, growth temperature is 750
DEG C, it is 2.0 × 10 in the pressure of reative cell-5Pa, the speed of growth are that under the conditions of 0.4ML/s, the N-shaped obtained in step (5) adulterates
InGaN/GaN MQWs are grown in GaN film；The InGaN/GaN SQWs are that the InGaN well layer/GaN in 10 cycles builds
Layer, the wherein thickness of InGaN well layer are 3nm, and the thickness of GaN barrier layer is 13nm；
(8) epitaxial growth of p-type doping GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is adjusted to into 750
DEG C, it is 8.0 × 10 in the pressure of reative cell-5Pa, the speed of growth are under the conditions of 0.8ML/s, in the InGaN/ that step (6) is obtained
The thickness grown on GaN MQWs is the p-type doping GaN film of 350nm, and p-GaN layer doping content is 5 × 1018cm-3。
ScMgAlO manufactured in the present embodiment4LED on substrate either on surface topography, or in photoelectricity
All there is extraordinary performance, test data is close with embodiment 1, will not be described here in performance.
Above-described embodiment is the utility model preferably embodiment, but embodiment of the present utility model is not by described
The restriction of embodiment, it is other it is any without departing from the change made under Spirit Essence of the present utility model and principle, modify, replace
Generation, combination, simplification, should be equivalent substitute mode, be included within protection domain of the present utility model.
Claims (8)
1. the LED being grown on magnesium aluminate scandium substrate, it is characterised in that including being grown on magnesium aluminate scandium substrate
GaN cushions, the Al nano island layers being grown on GaN cushions, the undoped GaN layer being grown on Al nano island layers, growth
N-shaped doping GaN film in undoped GaN layer, the InGaN/GaN SQWs being grown in N-shaped doping GaN film, growth
P-type doping GaN film on InGaN/GaN SQWs.
2. the LED being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the aluminic acid
Magnesium scandium substrate is with (0001) face 0.5～1 ° of (11-20) face partially as epitaxial surface.
3. the LED being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the GaN delays
The thickness for rushing layer is 50～100nm.
4. the LED being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the Al receives
The thickness of rice island layer is 50～200nm.
5. the LED being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that described non-to mix
The thickness of miscellaneous GaN layer is 200～300nm.
6. the LED being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the N-shaped is mixed
The thickness of miscellaneous GaN film is 3～5 μm.
7. the LED being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that described
InGaN/GaN SQWs are the InGaN well layer/GaN barrier layer in 7～10 cycles, and wherein the thickness of InGaN well layer is 2～3nm；
The thickness of GaN barrier layer is 10～13nm.
8. the LED being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the p-type is mixed
The thickness of miscellaneous GaN film is 250～350nm.
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