CN206019863U - A kind of film temperature sensor and six target platform double-ion beam reactive sputter-deposition equipment - Google Patents
A kind of film temperature sensor and six target platform double-ion beam reactive sputter-deposition equipment Download PDFInfo
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- CN206019863U CN206019863U CN201621020373.6U CN201621020373U CN206019863U CN 206019863 U CN206019863 U CN 206019863U CN 201621020373 U CN201621020373 U CN 201621020373U CN 206019863 U CN206019863 U CN 206019863U
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Abstract
This utility model is related to a kind of film temperature sensor and six target platform double-ion beam reactive sputter-deposition equipment, and wherein film temperature sensor at least includes：Substrate；Film thermocouple, its are arranged on the substrate；The film thermocouple includes that the inner docking of positive pole thermocouple film and negative pole thermocouple film, the positive pole thermocouple film and negative pole thermocouple film forms thermal cross；The thickness of the positive pole thermocouple film and negative pole thermocouple film is 0.5～0.8 μm；Pad film, its are arranged on the outer end of positive pole thermocouple film and negative pole thermocouple film, for being connected with external lead wire；Protecting film, its are arranged on the film thermocouple, and cover film thermocouple place substrate region surface.Film temperature sensor of the present utility model, the thin film thermoelectric dual thickness of plating are little, and the response time to temperature is fast, and small volume after thermocouple encapsulation, and certainty of measurement is high.
Description
Technical field
This utility model is related to sensor technical field, more particularly to a kind of film temperature sensor and six target platform double ions
Beam reactive sputter-deposition equipment.
Background technology
Sensor technology is the three big pillars for constituting modern information industry with communication technology and computer technology, is one and works as
The new and high technology of the fast development that this life circle attracts people's attention, while be that a relative communication and computer technology integrally fall behind again
Bottleneck industry.Traditional sensor is difficult to meet the present computer technology and communication technology to sensing because of function, characteristic, volume etc.
The precision of device, reliability, environment resistance, information processing capability etc. are required and are gradually eliminated.Temperature sensor is to experience temperature
And the sensor of usable output signal is converted into, mainly include that thermal resistance, critesistor, thermocouple and integrated P-N temperature are passed
Sensor.With the development of technology, infra-red radiation and fiber optic temperature equitemperature sensor have also obtained increasing application.
However, traditional thermocouple sensing chip is welded with both positive and negative polarity thermocouple wire and to form thermal cross and carry out thermometric,
As thermocouple wire form thermocouple material is block materials, the thickness of its thermal cross is thicker, and the response time to temperature is longer,
And there is larger volume after thermocouple encapsulation.It would therefore be highly desirable to developing, a kind of response time is fast and high-performance of small volume is thin
Film temperature sensor.
Utility model content
The technical problems to be solved in the utility model is, the response time for existing film temperature sensor is slow and volume
A kind of big defect, there is provided the little film temperature sensor of thin film thermoelectric dual thickness.
In order to solve above-mentioned technical problem, this utility model provides a kind of film temperature sensor, at least includes：
Substrate；
Film thermocouple, its are arranged on the substrate；The film thermocouple includes positive pole thermocouple film and negative pole heat
The inner docking of galvanic couple film, the positive pole thermocouple film and negative pole thermocouple film forms thermal cross；The positive pole thermocouple
The thickness of film and negative pole thermocouple film is 0.5～0.8 μm；
Pad film, its are arranged on the outer end of positive pole thermocouple film and negative pole thermocouple film, for being connected with external lead wire；
Protecting film, its are arranged on the film thermocouple, and cover film thermocouple place substrate region surface.
In the film temperature sensor according to this utility model preferred embodiment, the film thermocouple is from following
Select in one group of thermocouple material：Nickel chromium triangle 10- nisiloys 3, platinum rhodium 30- platinum rhodium 6, W-Re 5- W-Res 26, W-Re 3- W-Res 25, nickel
Chromium-cupro-nickel, iron/copper nickel, nickel chromium triangle silicon-nisiloy, platinum rhodium 13- platinum, platinum rhodium 10- platinum and copper-cupro-nickel.
In the film temperature sensor according to this utility model preferred embodiment, the film temperature sensor is also
Including the tantalum pentoxide insulation being formed at by ion beam sputter depositing technology between the film thermocouple and protecting film
Transition film.
In the film temperature sensor according to this utility model preferred embodiment, the tantalum pentoxide is insulated
The thickness for crossing film is 150～180nm.
This utility model additionally provides a kind of six target platform double ions for preparing film temperature sensor as above
Beam reactive sputter-deposition equipment, the six targets platform double-ion beam reactive sputter-deposition equipment include main ion source, auxiliary ion source, work
Part platform and rotatable six targets platform；The six targets platform is located on the ion beam emittance direction in main ion source, and the work stage is located at
On the direction of the ion beam sputter depositing on the auxiliary ionogenic ion beam emittance direction and main ion source, and the workpiece
Platform is provided with switchable baffle plate.
Implement film temperature sensor of the present utility model and six target platform double-ion beam reactive sputter-deposition equipment, with
Lower beneficial effect：In film temperature sensor prepared by this utility model, the thin film thermoelectric dual thickness of plating is little, the sound to temperature
Fast between seasonable, and small volume after thermocouple encapsulation, certainty of measurement height.
Description of the drawings
Fig. 1 is the film temperature sensor structural representation according to this utility model preferred embodiment；
Fig. 2 is the preparation method flow chart of the film temperature sensor according to this utility model preferred embodiment；
Fig. 3 is the structural representation of six target platform double-ion beam reactive sputter-deposition equipment.
Specific embodiment
Purpose, technical scheme and advantage for making this utility model embodiment is clearer, new below in conjunction with this practicality
Accompanying drawing in type embodiment, is clearly and completely described to the technical scheme in this utility model embodiment, it is clear that retouched
The embodiment that states is a part of embodiment of the present utility model, rather than whole embodiments.Reality in based on this utility model
Apply example, the every other embodiment obtained on the premise of creative work is not made by those of ordinary skill in the art, all
Belong to the scope of this utility model protection.
The various structural representations according to the embodiment of the present disclosure are shown in the drawings.These figures are not drawn to scale
, wherein for the purpose of clear expression, some details are exaggerated, and some details may be eliminated.Shown in figure
Various regions, the shape of layer and the relative size between them, position relationship are only exemplary, in practice because of system
Make tolerance or technical limitations and deviation, and in addition those skilled in the art can be designed with difference according to actually required
Shape, size, the regions/layers of relative position.
In the context of the disclosure, when by one layer/element be referred to as be located at another layer/element " on " when, the layer/element can
With on another layer/element, or between them, there may be intermediate layer/element.In addition, if in a kind of direction
In one layer/element be located at another layer/element " on ", then when turn towards when, the layer/element may be located at another layer/unit
Part D score.
Fig. 1 is referred to, is the film temperature sensor structural representation according to this utility model preferred embodiment.Such as Fig. 1
Shown, the film temperature sensor at least includes：Substrate 1, film thermocouple, pad film 5 and protecting film 7.
Wherein, substrate 1 is preferably but not limited to silicon carbide substrate.
Film thermocouple is formed on the substrate 1 using ion beam sputter depositing technology.The film thermocouple includes just very hot
The inner docking of galvanic couple film 2 and negative pole thermocouple film 3, wherein positive pole thermocouple film 2 and negative pole thermocouple film 3 forms thermoelectricity and couples
Point 4.The thickness of film thermocouple is 0.5～0.8 μm.In preferred embodiment of the present utility model, film thermocouple preferably but
It is not limited to using the thermocouple material shown in form 1, specific use temperature and the signal selected according to film temperature sensor
Output requires to determine.
Form 1
| Graduation Number | B | C | D | E | J |
| Material | Platinum rhodium 30- platinum rhodium 6 | W-Re 5- W-Res 26 | W-Re 3- W-Res 25 | Nickel chromium triangle-cupro-nickel | Iron/copper nickel |
| Graduation Number | K | N | R | S | T |
| Material | Nickel chromium triangle 10- nisiloys 3 | Nickel chromium triangle silicon-nisiloy | Platinum rhodium 13- platinum | Platinum rhodium 10- platinum | Copper-cupro-nickel |
Pad film 5 is by ion beam sputter depositing technology in the external connection end of positive pole thermocouple film 2 and negative pole thermocouple film 3
Deposition is formed, for being connected with external lead wire.Pad film 5 is preferably but not limited to.In the present embodiment, lead film 4 is by golden Au systems
Into.Although this gives a kind of specific pad membrane material, this utility model not limited to this, but which can be adopted
The electrode material that it is suitable for, such as aluminium cobalt alloy.5 surface of pad film can be coated with high temperature resistant inorganic glue material, such as inorganic
Alumino-silicate materials.
Protecting film 7 is then covered on film thermocouple by ion beam sputter depositing technology, and cover film thermocouple institute
On substrate region surface.The protecting film 7 is preferably but not limited to earth silicon material.The protecting film 7 can stop the oxygen in air
With erosion of the steam to sensor, the reliability and stability of film temperature sensor are improved.
In this utility model preferred embodiment, film temperature sensor is also included by ion beam sputter depositing technology
The tantalum pentoxide insulation transition film 6 being formed between film thermocouple and protecting film 7.The Ta2O5Insulation transition film 6 be for
Extenuate protective layer 7 and substrate 1 and the mismatch of the lattice parameter and thermal coefficient of expansion of thermocouple material, the mistake of follow-up preparation
The thickness for crossing film is about 150～180nm.
Fig. 2 is referred to, is the preparation method flow chart of the film temperature sensor according to this utility model preferred embodiment.
As shown in Fig. 2 film temperature sensor of the present utility model can be prepared by the following method：
First, in step sl, there is provided substrate 1.
Subsequently, in step s 2, by ion beam sputter depositing technology film thermocouple on the substrate 1.The thin film thermoelectric
The even inner docking shape for including positive pole thermocouple film 2 and negative pole thermocouple film 3, the positive pole thermocouple film 2 and negative pole thermocouple film 3
Into thermal cross 4.Step S2 is further included：
S2-1, on the substrate 1 making positive pole thermocouple film photoresist, and be fixed in work stage；
S2-2, the ion energy of setting ion beam are 500～700eV, and setting ion beam current density is 0.4～0.55mA/
cm2；And the background pressure in vacuum storehouse is extracted into and is maintained at 3 × 10-3Pa and following；Arrange work stage rotational velocity be 7～
9rpm, angle of deposit are 45 °；
S2-3, using ion source bombard positive pole thermocouple target, make positive pole thermocouple target as sputter particle deposition out
On substrate, positive pole thermocouple film is formed；Positive pole thermocouple film photoresist is subsequently removed；
S2-4, on substrate, negative pole thermocouple film photoresist is made, and be fixed in work stage；
S2-5, using ion source bombard negative pole thermocouple target, make negative pole thermocouple target as sputter particle deposition out
On substrate, negative pole thermocouple film is formed；Negative pole thermocouple film photoresist is subsequently removed.
Subsequently, in step s3, by ion beam sputter depositing technology in positive pole thermocouple film 2 and negative pole thermocouple film 3
External connection end on form pad film 5.
Subsequently, in step s 4, protecting film 7 is formed on film thermocouple by ion beam sputter depositing technology, and is protected
7 cover film thermocouple place substrate region surface of cuticula.
In the preparation process of above-mentioned film temperature sensor, can be between step S3 and step S4, by ion
Beam sputter-deposition technology deposits tantalum pentoxide insulation transition film 6 on film thermocouple.The tantalum pentoxide insulation transition film 6
Also cover film thermocouple place substrate region surface.Afterwards tantalum pentoxide insulate transition film 6 on protecting film described in plating
7.
Above-mentioned steps S2～S4 intermediate ions source also includes target cleaning step before bombardment target, adopts mental retardation in the step
Ion beam is bombarded 2～4 minutes to target material surface, to remove target material surface impurity, the ion energy E of the low energy ion beami=200
～500eV, ion beam current density are Jb=0.2～0.4mA/cm2.It is highly preferred that in step S2～S4 intermediate ions source in bombardment target
Also include pre-treatment step before material, the surface of the work for needing plated film bombarded 2～4 minutes using low energy ion beam in the step,
To increase surface of the work adhesive force, the ion energy E of the low energy ion beami=200～500eV, ion beam current density are Jb=
0.2～0.4mA/cm2.
Positive pole thermocouple film 2 and negative pole thermocouple film 3 in preferred embodiment of the present utility model, in film thermocouple
Nickel chromium triangle and Nickel-Silicom thermocouple material is respectively adopted.Nickel chromium-nickel silicon thermocouple, i.e. 3 thermocouple of nickel chromium triangle 10- nisiloys, Graduation Number is K,
It is the maximum cheap metal thermocouple of current consumption.The chemical composition of positive pole nickel chromium triangle thermocouple material is：Ni:Cr=90:10, negative pole
The chemical composition of Nickel-Silicom thermocouple material is：Ni:Si=97:3, it is -200～1300 DEG C which uses temperature.K-type thermocouple has
The linearity is good, and thermo-electromotive force is larger, and sensitivity is high, and preferably, antioxygenic property is strong, and low price etc. is excellent for stability and uniformity
Point, can be used in oxidisability inert atmosphere.
Positive pole thermoelectricity in the film thermocouple for depositing is enabled to by ion beam sputter depositing technology in this utility model
The thickness of even film 2 and negative pole thermocouple film 3 reaches 0.5～0.8 μm.In view of thin film preparation process conventional at present cannot be accurate
Control thin film deposition thickness, and requirement of the film temperature sensor to thickness is higher, this utility model is by many experiments and warp
Test summary, and shadow of the ion energy and ion beam current of coupled ion beam sputter-deposition technique intermediate ion beam to film deposition rate
Ring, drawn the optimal computed formula of nickel chromium triangle and Nickel-Silicom thermocouple deposition of thin films of material time.
The thin film deposition time t of the nickel chromium triangle thermocouple material that chooses wherein in step S21Calculated by below equation (1)：
The thin film deposition time t of the Nickel-Silicom thermocouple material that chooses in step S22Calculated by below equation (2)：
In formula (1) and formula (2), m is default film thickness, that is, need the thickness of film thermocouple for depositing, unit to be
nm.Ion energies of the x for ion beam, unit is eV.Calculate the thin film deposition time t for obtaining1And t2Unit be min.And make
With the formula, the thin film deposition time is accurately set, heavy in ion beam sputtering, when controlling thin film and reaching default film thickness, to need
Ion beam current is set to standard value, i.e. 100mA during product.
This utility model is also verified to above-mentioned formula (1) and (2).With ion beam energy be respectively 400eV,
450eV, 500eV, 550eV, 600eV and 700eV, the thickness of default film thermocouple are respectively 0.8 μm, 0.7 μm, 0.6 μm
With 0.5 μm, calculate optimal thin film deposition time t respectively1And t2.And by experiment, respectively on the substrate 1 using ion beam
Sputter-deposition technology plated film, setting ion beam current are 100mA, sputter angle θs=45 °, deposition angles θs=17 °, ion beam energy point
Not Wei 400eV, 450eV, 500eV, 550eV, 600eV and 700eV, using the above-mentioned thin film deposition time t for calculating1And t2Point
Not Chen Ji nickel chromium triangle thermocouple material and Nickel-Silicom thermocouple material, and measure gained film thickness.Can by contrasting with preset thickness
Know, when adopting ion energy for 450～550eV, the film thickness of deposition can be accurately controlled in ± 2% by this utility model
In the range of.When adopting ion energy for 600～700eV, this utility model can be by the film thickness precise control of deposition
In the range of ± 5%.
Fig. 3 is referred to, is the structural representation of six target platform double-ion beam reactive sputter-deposition equipment.As shown in figure 3, this reality
With new film temperature sensor but it is not limited to prepare using the six targets platform double-ion beam reactive sputter-deposition equipment.Six target
Platform double-ion beam reactive sputter-deposition equipment includes main ion source 21, auxiliary ion source 26, work stage 28 and rotatable six targets platform
24.Main ion source 21 and auxiliary ion source 26 are located at the both sides of vacuum chamber 29 and are oppositely arranged, and both emission shaft is parallel and is spaced pre-
Set a distance.Six target platforms 24 are located in the middle part of vacuum chamber in 22 direction of the launch of ion beam in main ion source, with six target surfaces, can be distinguished
For fixing tantalum target, silicon dioxide target, positive and negative thermocouple target and pad film target.Work stage 28 is used for fixing substrate 1,
It is located in auxiliary 27 direction of the launch of ionogenic ion beam, while the ion beam sputtering particle 25 positioned at the work target surface of six target platform 24 sinks
On long-pending direction.It is additionally provided with the work stage 28 for blocking the switchable baffle plate 20 of workpiece in work stage 28.As illustrated,
Six target platforms 24 are arranged in 45 degree with main ion source 21, and work stage 28 is arranged in 45 degree with auxiliary ion source 26.
The preparation process of film temperature sensor is specifically described with reference to the equipment of Fig. 3.In the embodiment with
Carborundum prepares substrate 1, plates NiCr, NiSi, Au, Ta successively2O5、SiO2Five kinds of thin film.
First, environmental preparation：
1st, working gas purity is 99.99% Ar, and reacting gas purity is 99.99% O2.Work stage rotation
Speed is 8rpm.
2nd, the substrate 1 of length × wide=10 × 5mm is fixed in work stage 28 as workpiece, by NiCr, NiSi, Au, Ta
And SiO2Target 23 be sequentially fixed on each target surface of six target platforms 24.
3rd, vacuum storehouse 21 is closed, is first slightly taken out with mechanical pump unit, when vacuum reaches 10Pa, start molecular pump two-shipper essence
Take out, background vacuum is extracted into and is maintained at：3×10-3Pa.
2nd, substrate 1 is provided, surface is cleaned：
1st, with mechanical polishing and conventional chemical clean first substrate 1 is deoiled, decontamination, deoxidation compound.
2nd, the baffle plate 20 of work stage is opened, the low-energy Ar-ion beam bombardment 1 surface 3min of substrate produced with auxiliary ion source 26,
The pitting that drives out of on 1 surface of substrate will largely improve substrate 1 with NiCr positive pole thermocouple films and NiSi negative pole thermocouple films
And the adhesive force of Au pad films.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=0.35mA/
cm2.
3rd, NiCr positive pole thermocouple films are deposited：
1st, rotation six target platform 24 selects NiCr targets；Positive pole thermocouple film photoresist is made on the substrate 1.
2nd, the baffle plate 20 of work stage is closed, the low-energy Ar-ion beam bombardment NiCr target material surfaces produced with main ion source 21
3min, removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density are Jb=
0.35mA/cm2；
3rd, the baffle plate 20 of work stage is opened, the high-energy Ar ion beam bombardment NiCr targets produced with main ion source 21, NiCr
Target as sputter particle deposition out on the substrate 1, generates NiCr positive pole thermocouple films.The ion energy of the high-energy Ar ion beam
Ei=700eV, ion beam current density are Jb=0.55mA/cm2.
4th, NiSi negative pole thermocouple films are deposited：
1st, rotation six target platform 24 selects NiSi targets；Remaining photoresist on workpiece is removed, negative pole heat is made on the substrate 1
Galvanic couple film photoresist.
2nd, the baffle plate 20 of work stage is closed, the low-energy Ar-ion beam bombardment NiSi target material surfaces produced with main ion source 21
3min, removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density are Jb=
0.35mA/cm2；
3rd, the baffle plate 20 of work stage is opened, the high-energy Ar ion beam bombardment NiSi targets produced with main ion source 21, NiSi
Target as sputter particle deposition out on the substrate 1, generates NiSi negative pole thermocouple films.The ion energy of the high-energy Ar ion beam
Ei=700eV, ion beam current density are Jb=0.55mA/cm2.
5th, Au pad films are deposited
1st, rotation six target platform 24 selects Au targets, removes remaining photoresist on workpiece, makes pad film light on workpiece
Photoresist.
2nd, the baffle plate 20 of work stage is closed, the low-energy Ar-ion beam bombardment Au target material surfaces produced with main ion source 21
3min, removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=
0.35mA/cm2.
3rd, the baffle plate 20 of work stage is opened, and low-energy Ar-ion beam bombardment work stage 3min produced with auxiliary ion source 26 increases
Existing film surface adhesive force by force.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=0.35mA/
cm2.
4th, the high-energy Ar ion beam bombardment Au targets for being produced with main ion source 21, Au target as sputter particle deposition out exist
In the external connection end of NiCr positive pole thermocouple films and NiSi negative pole thermocouple films, Au pad films are generated.The high-energy Ar ion beam from
Sub- ENERGY Ei=700eV, ion beam current density Jb=0.55mA/cm2.
6th, Ta is deposited2O5Insulation transition film：
1st, rotation six target platform 24 selects Ta targets；Remaining photoresist on workpiece is removed, and makes insulation transition film photoetching
Glue.
2nd, the baffle plate 20 of work stage is closed, the low-energy Ar-ion beam bombardment Ta target material surfaces produced with main ion source 21
3min, removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density are Jb=
0.35mA/cm2.
3rd, the baffle plate 20 of work stage is opened, the high-energy Ar ion beam bombardment Ta targets produced with main ion source 21, Ta targets
The O that the particle for sputtering out is produced with auxiliary ion source 262Ion beam reacts, and forms Ta2O5Compound deposition is in thin film thermoelectric
In idol and film thermocouple place substrate region surface, Ta is generated2O5Insulation transition film.The ion energy of the high-energy Ar ion beam
Ei=700eV, ion beam current density are Jb=0.55mA/cm2.
7th, SiO is deposited2Protecting film：
1st, rotation six target platform 24 selects SiO2Quartz glass target；Remaining photoresist on workpiece is removed, and makes protection
Film photoresist.
2nd, the baffle plate 20 of work stage is closed, the low-energy Ar-ion beam bombardment SiO produced with main ion source 212Target material surface
3min, removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density are Jb=
0.35mA/cm2.
3rd, the baffle plate 20 of work stage is opened, and low-energy Ar-ion beam bombardment work stage 3min produced with auxiliary ion source 26 increases
Strong Ta2O5Insulation transition film surface adhesion force.The ion energy E of the low energy ion beami=400eV, ion beam current density are Jb=
0.35mA/cm2.
4th, the high-energy Ar ion beam bombardment SiO for being produced with main ion source 212Target, target as sputter particle out are formed
SiO2Compound deposition is in Ta2O5In insulation transition film, SiO is formed2Protecting film.The ion energy E of the high-energy Ar ion beami=
700eV, arranges ion beam current density Jb=0.55mA/cm2.
5th, vacuum storehouse 29 is opened, takes out work stage 28, removed the remaining photoresist of surface of the work, make film temperature sensing
Chip.
Double-ion beam reactive sputter-deposition (the Double Ion Bean Reactive that this utility model is adopted
Sputtering Deposition, abbreviation DIBRSD) technology is first with low-energy working gas ion beam to target and lining
Bottom is cleaned, to be filled with the main ion beam bombardment target that the main ion source of working gas produces, target as sputter particle out
The auxiliary ion beam produced with the auxiliary ion source for being filled with reacting gas carries out chemical reaction, produces stable compound deposition in substrate
On, generate compound film.Which has following distinguishing feature：
1st, the good evenness of thin film, the stress of thin film is little and adhesive force is high, and optical property more repeats stable；Running parameter
Independent control degree of freedom is big, can be with nanoscale control thin film growth, film microstructure and film lattice orientation；
2nd, target particle energy is high, and the pellicle film density height of deposition, impurity are few, high with the adhesion of substrate；To target
Prerinse is carried out with substrate, the adhesive force of thin film and substrate can be improved；
3rd, the numerous materials being suitable in addition to organic material and easy decomposing material, non-environmental-pollution dry method plated film, can prepare
Alloy firm, sull, high-melting-point thin film and insulation film.
Therefore, using six target platform double-ion beam reactive sputter-deposition equipment, the high performance thin film temperature sensing chip that makes
Small volume, high precision, response time are fast, temperature drift is little, good stability, reliability height, long service life, antivibration anti-interference shock resistance energy
Power is strong, it is adaptable to adverse circumstances, and processing technology is simple, and without high temperature ageing, the production time is short, and aggregative indicator is better than magnetic control
Like product prepared by sputtering.
Finally it should be noted that：Above example only in order to the technical solution of the utility model to be described, rather than a limitation；
Although being described in detail to this utility model with reference to the foregoing embodiments, it will be understood by those within the art that：
Which still can be modified to the technical scheme described in foregoing embodiments, or which part technical characteristic is carried out etc.
With replacement；And these modifications or replacement, do not make the essence of appropriate technical solution depart from each embodiment technology of this utility model
The spirit and scope of scheme.
Claims (5)
1. a kind of film temperature sensor, it is characterised in that at least include：
Substrate；
Film thermocouple, its are arranged on the substrate；The film thermocouple includes positive pole thermocouple film and negative pole thermocouple
The inner docking of film, the positive pole thermocouple film and negative pole thermocouple film forms thermal cross；The positive pole thermocouple film and
The thickness of negative pole thermocouple film is 0.5～0.8 μm；
Pad film, its are arranged on the outer end of positive pole thermocouple film and negative pole thermocouple film, for being connected with external lead wire；
Protecting film, its are arranged on the film thermocouple, and cover film thermocouple place substrate region surface.
2. film temperature sensor according to claim 1, it is characterised in that the film thermocouple is from following set of warm
Select in galvanic couple material：Nickel chromium triangle 10- nisiloys 3, platinum rhodium 30- platinum rhodium 6, W-Re 5- W-Res 26, W-Re 3- W-Res 25, nickel chromium triangle-cupro-nickel,
Iron/copper nickel, nickel chromium triangle silicon-nisiloy, platinum rhodium 13- platinum, platinum rhodium 10- platinum and copper-cupro-nickel.
3. the film temperature sensor according to any one of claim 1～2, it is characterised in that the film temperature is passed
Sensor also includes the tantalum pentoxide insulation transition film being formed between the film thermocouple and protecting film.
4. film temperature sensor according to claim 3, it is characterised in that the tantalum pentoxide insulation transition film
Thickness is 150～180nm.
5. a kind of six target platform double-ion beam reactive sputter-depositions for preparing the film temperature sensor described in claim 1 set
Standby, the six targets platform double-ion beam reactive sputter-deposition equipment includes main ion source, auxiliary ion source, work stage and rotatable six
Target platform；The six targets platform be located at main ion source ion beam emittance direction on, the work stage be located at described auxiliary ionogenic from
On the direction of the ion beam sputter depositing in the beamlet direction of the launch and main ion source, and the work stage be provided with switchable
Baffle plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621020373.6U CN206019863U (en) | 2016-08-31 | 2016-08-31 | A kind of film temperature sensor and six target platform double-ion beam reactive sputter-deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621020373.6U CN206019863U (en) | 2016-08-31 | 2016-08-31 | A kind of film temperature sensor and six target platform double-ion beam reactive sputter-deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206019863U true CN206019863U (en) | 2017-03-15 |
Family
ID=58255582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621020373.6U Active CN206019863U (en) | 2016-08-31 | 2016-08-31 | A kind of film temperature sensor and six target platform double-ion beam reactive sputter-deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206019863U (en) |
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2016
- 2016-08-31 CN CN201621020373.6U patent/CN206019863U/en active Active
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